Updated on 2023/03/22

写真a

 
HORIBE Hideo
 
Organization
Graduate School of Engineering Division of Science and Engineering for Materials, Chemistry and Biology Professor
School of Engineering Department of Chemistry and Bioengineering
Title
Professor
Affiliation
Institute of Engineering
Profile
1985年  京都大学工学部合成化学科卒業 1985年  三菱電機(株)先端技術総合研究所 研究員/主任研究員/主席研究員 1997年  博士(工学)(大阪大学) 「化学増幅ポジ型三成分系電子線レジストの設計と開発」 2003年  高知工業高等専門学校物質工学科 助教授 2007年  金沢工業大学バイオ・化学部応用化学科 教授 2013年  大阪市立大学大学院工学研究科 化学生物系専攻 教授(~2021年) 2014年  大阪市立大学産学官連携本部新産業創生研究センター 所長(~2017年) 2017年  大阪市立大学大学院工学研究科化学生物系専攻 専攻長(~2018年)  2022年  大阪公立大学大学院工学研究科 物質化学生命系専攻 教授(現在に至る) 2022年  大阪公立大学 学長特別補佐、基金推進室長(現在に至る) 2007年  大阪大学 招聘教授(兼) (現在に至る) 2015年  東北大学 客員教授(兼)(~2016年) 2016年  兵庫県立大学 客員教授(兼)(~2022年) 2016年 大阪工業大学 客員教授(兼)(~2019年) 2017年 高知工科大学 客員教授(兼)(現在に至る) 2017年 金沢大学 客員教授(兼)(現在に至る) 2018年 東京農工大学 客員教授(兼)(現在に至る) 2021年  東北大学 特任教授(兼)(現在に至る)    2021年  広島大学 客員教授(兼)(~2022年)
Affiliation campus
Sugimoto Campus

Position

  • Graduate School of Engineering Division of Science and Engineering for Materials, Chemistry and Biology 

    Professor  2022.04 - Now

  • School of Engineering Department of Chemistry and Bioengineering 

    Professor  2022.04 - Now

Degree

  • PhD ( Osaka University )

Research Areas

  • Nanotechnology/Materials / Structural materials and functional materials

  • Nanotechnology/Materials / Polymer materials

  • Nanotechnology/Materials / Composite materials and interfaces

Research Interests

  • ozone

  • Resist

  • PVDF

  • オゾン

  • ozone

  • イオンビーム

  • ultra-fine processing technology

  • resist

  • PVDF/PMMA

  • PVDF/PMMA

  • PVDF

  • Polymer Composites Filled with Electrical Filler

  • polymer chemistry

  • lithography

  • ion beam

  • atomic hydrogen

Research subject summary

  • 「感光性高分子(レジスト)の研究」、「オゾンや水素ラジカルによる高分子薄膜の分解」、「フィラー分散高分子の温度に対する導電性」、「多成分系高分子の相溶性と結晶構造」といったテーマに取り組んでおり、新規な高分子材料を高分子合成やポリマーアロイ化技術により創生し、その高分子物性を評価し、最終的に新機能創出を図る。

Research Career

  • フィラー分散高分子の温度に対する導電性

    導電性複合材料、フィラー分散高分子、PTC特性  Joint Research in Japan

    1900.04 

  • 多成分系高分子の相溶性と結晶構造

    PVDF、結晶構造、コンフォメーション  Joint Research in Japan

    1900.04 

  • 感光性高分子(レジスト)の研究

    レジスト、感度、解像度  Joint Research in Japan

    1900.04 

  • オゾンや水素ラジカルによる高分子薄膜の分解(気相-固相の非平衡反応へのアレニウス則の適用)

    オゾン、水素ラジカル、高分子薄膜の分解  Joint Research in Japan

    1900.04 

Professional Memberships

  • EM-NANO

      Domestic

  • HWCVD

      Overseas

  • The Society of Photopolymer Science and Technology

      Domestic

  • Cat-CVD

      Domestic

  • The Japan Society of Polymer Processing

      Domestic

  • The Society of Polymer Science

      Domestic

  • Japanese Society of Radiation Chemistry

      Domestic

  • The Japan Society of Applied Physics

      Domestic

  • HWCVD

  • EM-NANO

  • Cat-CVD研究会

▼display all

Committee Memberships (off-campus)

  • 企画委員   フォトポリマー学会  

    2014.04 - Now 

  • 組織委員   フォトポリマー学会  

    2014.04 - Now 

  • 関西支部運営委員   プラスチック成形加工学会  

    2014.04 - Now 

  • Organizing Committee   EM-NANO  

    2013.06 - Now 

  • International Advisory Committee   HWCVD  

    2012.09 - Now 

  • 第51期代議員   応用物理学会  

    2012.02 - 2016.02 

  • 常任理事   日本放射線化学会  

    2010.09 - Now 

  • 第49期人財育成・教育事業委員   応用物理学会  

    2010.04 - 2012.03 

  • 北陸・信越支部役員   応用物理学会  

    2010.04 - 2012.03 

  • -   学会誌等の編集・審査委員会  

    2010.04 

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    電気学会 論文委員

  • 委員   Cat-CVD研究会  

    2008.06 - Now 

  • -   審議会・政策研究会等の委員会  

    2008.04 - 2009.03 

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    高知工科大学エネルギー科学教育研究会委員(経産省)

  • -   審議会・政策研究会等の委員会  

    2007.04 - 2008.03 

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    NEDOピアレビュア

  • -   審議会・政策研究会等の委員会  

    2004.04 - 2005.03 

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    高知大学エネルギー・環境教育研究会委員(経産省)

▼display all

Awards

  • 第65回電気科学技術奨励賞

    2017   「永久ヒューズ用導電性複合材料の開発」

  • 平成28年度大阪ニュークリアサイエンス協会(ONSA)賞

    2017   「イオンビーム照射レジストの除去技術の確立とレジスト材料の開発」

  • Plasma Electronics Award

    2013  

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    Country:Japan

  • Hiraga Gennai Award

    2007  

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    Country:Japan

  • 46th kagakugijyutsu Award

    1995  

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    Country:Japan

Job Career (off-campus)

  • Tohoku Univ./Guest Professor

    2015 - 2016

  • Kanazawa Institute of Technology / Professor

    2007 - 2013

  • Osaka University / Guest Professor

    2007

  • Kochi National College of Technology / Associate Professor

    2003 - 2007

  • Mitsubishi Electric Corporation / Researcher / Senior Researcher / Head Researcher

    1985 - 2003

Education

  • Kyoto University     Graduated/Completed

    - 1985

Papers

  • Enhanced decomposition of toxic pollutants by underwater pulsed discharge in the presence of hydrogen peroxide and microbubbles

    Risako Matsuura, Noritsugu Kometani, Hideo Horibe, Tatsuru Shirafuji

    Japanese Journal of Applied Physics   61 ( SA )   2022.01( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)  

    The decomposition of phenol and 4-chlorophenol by underwater pulsed discharge has been examined. The addition of hydrogen peroxide improved the decomposition rate of phenol by about 2.5 times and that of 4-chlorophenol by about 1.5 times. Analysis using a fluorescent probe suggested that the addition of hydrogen peroxide enhanced the production of hydroxyl radicals by about 3 times. We have also examined the effect of using microbubbles on the decomposition of phenol. The use of only microbubbles resulted in a slight increase of the decomposition rate, while the use of both microbubbles and hydrogen peroxide led to a remarkable enhancement of the decomposition rate by about 3.5 times with the conversion of phenol reaching 70% at discharge time of 3 h, which corresponded to the energy yield of 4.39 × 10-9 mol J-1.

    DOI: 10.35848/1347-4065/ac2624

  • Effect of pgsE expression on the molecular weight of poly(gamma-glutamic acid) in fermentative production Reviewed

    Fujita Ken-Ichi, Tomiyama Takashi, Inoi Takahiro, Nishiyama Takashi, Sato Eriko, Horibe Hideo, Takahashi Ryosuke, Kitamura Shinichi, Yamaguchi Yoshihiro, Ogita Akira, Tanaka Toshio

    POLYMER JOURNAL   53 ( 2 )   409 - 414   2021.02( ISSN:0032-3896

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41428-020-00413-7

  • Effect of pgsE expression on the molecular weight of poly(γ-glutamic acid) in fermentative production

    Ken Ichi Fujita, Takashi Tomiyama, Takahiro Inoi, Takashi Nishiyama, Eriko Sato, Hideo Horibe, Ryosuke Takahashi, Shinichi Kitamura, Yoshihiro Yamaguchi, Akira Ogita, Toshio Tanaka

    Polymer Journal   53 ( 2 )   409 - 414   2021.02( ISSN:0032-3896

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    Publishing type:Research paper (scientific journal)  

    © 2020, The Society of Polymer Science, Japan. Poly(γ-glutamic acid) (PGA) is a biopolymer produced by Bacillus spp. via the γ-amide linkages of d- and/or l-glutamate. Although high-molecular-weight (HMW) PGA possesses many attractive properties, such as flocculating, wound healing, and immune-stimulating effects, no studies have reported factors useful for increasing the molecular weight of PGA during microbial production. PgsB, PgsC, and PgsA are the minimum protein sets required for PGA production in B. subtilis, and PgsE improves PGA productivity. Analysis by size-exclusion chromatography combined with multiangle laser light scattering revealed that the molecular weight of PGA was Mw = 2,900,000 g mol−1 and predominantly Mw = 47,000 g mol−1 in preparations derived from B. subtilis cells with and without pgsE, respectively. PgsE may be required to increase the molecular weight of PGA.

    DOI: 10.1038/s41428-020-00413-7

  • Removal of novolac photoresist with various concentrations of photo-active compound using h<inf>2</inf>/o<inf>2</inf> mixtures activated on a tungsten hot-wire catalyst

    Akita K.

    Journal of Photopolymer Science and Technology   34 ( 5 )   499 - 504   2021( ISSN:09149244

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  • Microstructure Formation on Poly (Methyl Methacrylate) Film Using Atmospheric Pressure Low-Temperature Plasma

    Yamamoto M.

    Journal of Photopolymer Science and Technology   34 ( 4 )   385 - 392   2021( ISSN:09149244

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  • Influence of glycerol in developer on novolak-type positive-tone resist solubility

    Kajita S.

    Journal of Photopolymer Science and Technology   34 ( 5 )   495 - 498   2021( ISSN:09149244

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  • Improvement of resist characteristics by synthesis of a novel dissolution inhibitor for chemically amplified three-component novolac resist

    Akechi S.

    Journal of Photopolymer Science and Technology   34 ( 5 )   491 - 494   2021( ISSN:09149244

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  • Effect of ph on decomposition of organic compounds using ozone microbubble water

    Tsujimoto K.

    Journal of Photopolymer Science and Technology   34 ( 5 )   485 - 489   2021( ISSN:09149244

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  • Development of Bile Direct Stent Having Antifouling Properties by Atmospheric Pressure Low-Temperature Plasma

    Sekiguchi A.

    Journal of Photopolymer Science and Technology   34 ( 4 )   401 - 410   2021( ISSN:09149244

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  • Thermoresponsive Conductivity of Acrylamide-based Polymers and Ni Microparticle Composites

    Onishi Hayato, Koda Yuta, Horibe Hideo

    Chemistry Letters   49 ( 10 )   1224 - 1227   2020.10( ISSN:13480715

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    Publishing type:Research paper (scientific journal)  

    <p>Composite materials with polymers and inorganic fillers enable the preparation of a variety of functional polymer materials. In particular, composites with crystalline polymers and Ni microparticles (NiMPs) can be applied to thermoresponsive conductive materials which are called PTC (positive temperature coeffcient) materials. These materials are conductive around room temperature, and turn to insulators at high temperature. This phenomenon is induced by the volume expansion of the crystalline domains, therefore, the design of matrix polymers has been limited. Herein, we showed PTC phenomena by using polyacrylamide-based (co)polymers in lieu of crystalline polymers. Those materials showed PTC phenomena regarding conductivity probably owing to the hydrogen bonding, yet polyacrylamides are amorphous polymers.</p>

    DOI: 10.1246/cl.200342

    CiNii Article

  • Concept model of atomic hydrogen dry developing process for photolithographic patterning Reviewed

    Takemori Yuki, Gohdo Masao, Koda Yuta, Horibe Hideo

    AIP ADVANCES   10 ( 10 )   2020.10

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0027509

  • Concept model of atomic hydrogen dry developing process for photolithographic patterning

    Yuki Takemori, Masao Gohdo, Yuta Koda, Hideo Horibe

    AIP Advances   10 ( 10 )   2020.10

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    Publishing type:Research paper (scientific journal)  

    © 2020 Author(s). Atomic hydrogen dry etching was used for microstructure fabrication. Photolithography was proposed and achieved by a dry development process using atomic hydrogen irradiation. The reaction system of poly(methyl methacrylate) mixed with molecular benzophenone was examined as a model system for a proof-of-concept study. Optical patterning was experimentally made on a thin layer of poly(methyl methacrylate) with benzophenone by UV light exposure with a photomask. The reaction system acted as a negative tone resist in the proposed process. Thus, a model system for a new atomic hydrogen dry development process was proposed and successfully demonstrated.

    DOI: 10.1063/5.0027509

  • Thermoresponsive Conductivity of Acrylamide-based Polymers and Ni Microparticle Composites Reviewed

    Onishi Hayato, Koda Yuta, Horibe Hideo

    公益社団法人 日本化学会 CHEMISTRY LETTERS   49 ( 10 )   1224 - 1227   2020.10( ISSN:0366-7022

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    Publishing type:Research paper (scientific journal)  

    <p>Composite materials with polymers and inorganic fillers enable the preparation of a variety of functional polymer materials. In particular, composites with crystalline polymers and Ni microparticles (NiMPs) can be applied to thermoresponsive conductive materials which are called PTC (positive temperature coeffcient) materials. These materials are conductive around room temperature, and turn to insulators at high temperature. This phenomenon is induced by the volume expansion of the crystalline domains, therefore, the design of matrix polymers has been limited. Herein, we showed PTC phenomena by using polyacrylamide-based (co)polymers in lieu of crystalline polymers. Those materials showed PTC phenomena regarding conductivity probably owing to the hydrogen bonding, yet polyacrylamides are amorphous polymers.</p>

    DOI: 10.1246/cl.200342

    CiNii Article

  • Microanalysis of Single Poly(N-isopropylacrylamide) Droplet Produced by an Optical Tweezer in Water: Isotacticity Dependence of Growth and Chemical Structure of the Droplet Reviewed

    Ushiro Kenta, Shoji Tatsuya, Matsumoto Mitsuhiro, Asoh Taka-Aki, Horibe Hideo, Katsumoto Yukiteru, Tsuboi Yasuyuki

    JOURNAL OF PHYSICAL CHEMISTRY B   124 ( 38 )   8454 - 8463   2020.09( ISSN:1520-6106

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.jpcb.0c06932

  • Microanalysis of Single Poly(N-isopropylacrylamide) Droplet Produced by an Optical Tweezer in Water: Isotacticity Dependence of Growth and Chemical Structure of the Droplet

    Kenta Ushiro, Tatsuya Shoji, Mitsuhiro Matsumoto, Taka Aki Asoh, Hideo Horibe, Yukiteru Katsumoto, Yasuyuki Tsuboi

    Journal of Physical Chemistry B   124 ( 38 )   8454 - 8463   2020.09( ISSN:1520-6106

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    Publishing type:Research paper (scientific journal)  

    © 2020 American Chemical Society. Thermoresponsive phase separation mechanisms of aqueous poly(N-isopropylacrylamide) (PNIPAM) solutions were investigated using an optical tweezer combined with a Raman microspectroscope. A near-infrared laser beam (λ = 1064 nm) was focused into the solution to produce and trap a single polymer microdroplet under an optical microscope. The laser beam played two important roles: The first role is to locally heat the solution to induce phase separation in which numerous polymer microdroplets are generated around the focus, while the second one is to collect these microdroplets. Eventually, a single polymer droplet was stably produced and trapped at the focus. Our method enabled us to perform two types of microanalysis for the droplet. Analysis I is real-time monitoring the growth of the polymer droplets by which we can determine the growth rate of droplets. Analysis II is Raman microspectroscopy to reveal chemical components of the droplets. By means of these two analyses, we revealed important phase separation mechanisms in terms of stereoregularity (isotacticity) dependence. From analysis I, we show that droplet growth is governed by the Ostwald ripening mechanism and the growth is accelerated by increasing the isotacticity. From analysis II, we show that the gelation is promoted in the droplet (physical gel formation) with increasing isotacticity. Our technique should be a versatile tool to explore liquid-liquid phase separation mechanisms for various binary solution systems.

    DOI: 10.1021/acs.jpcb.0c06932

    PubMed

  • Effects of Nitrogen Dilution on the Photoresist Removal Rate by Hydrogen Radicals

    Yamamoto Masashi, Nishioka Hiroto, Akita Koki, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    Journal of Photopolymer Science and Technology   33 ( 4 )   427 - 431   2020.07( ISSN:09149244

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    Publishing type:Research paper (scientific journal)  

    <p>We have previously demonstrated that photoresist removal rate comparable to oxygen plasma is accomplished by optimizing the removal conditions with H radicals produced on hot metal filament surfaces from H<sub>2</sub>/N<sub>2</sub> mixtures (H<sub>2</sub>:N<sub>2</sub> = 10:90 vol%). N<sub>2</sub> gas was used to dilute the concentration of the H<sub>2</sub> gas and to reduce the risk of explosion. However, it is not clear how the dilution of H<sub>2</sub> by N<sub>2</sub> affects the removal rate. In this paper, we examined the relationship between the removal rate and the H<sub>2</sub> content; the flow rate ratio of H<sub>2</sub> to H<sub>2</sub>+N<sub>2</sub>. The removal rate increased with increasing the H<sub>2</sub> content. In addition, the removal rate increased with increasing the substrate temperature according to an Arrhenius equation, when the H<sub>2</sub> content was over 90%. However, below 60%, the removal rate decreased with increasing the temperature over 230 ± 5 ℃. Denaturation of photoresist, e.g. hardening and/or crosslinking, may be induced by substrate heating when the H-radical density is low. The removal rate decreases not only by the deficiency of H radicals but also by the denaturation of films in H<sub>2</sub>/N<sub>2</sub> mixed systems.</p>

    DOI: 10.2494/photopolymer.33.427

    CiNii Article

  • Evaluation of Decomposition Property of Photoresist by Oxygen Radicals Using Helium-Oxygen Mixtures

    Yamamoto Masashi, Akita Koki, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    Journal of Photopolymer Science and Technology   33 ( 4 )   433 - 437   2020.07( ISSN:09149244

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    Publishing type:Research paper (scientific journal)  

    <p>We have previously demonstrated that photoresist removal rate is enhanced by adding a trace amount of O<sub>2</sub> to the atmosphere in which H radicals are produced from H<sub>2</sub> on a hot metal filament. In this case, not only H radicals but also O and OH radicals are produced. The populations of O and OH radicals are a few hundredth parts of that of H radicals, but these radicals must play important roles. It is not clear which radicals contribute more to the enhancement of the removal rate. We used He/O<sub>2</sub> mixtures in this study, instead of H<sub>2</sub>/O<sub>2</sub>, to produce O radicals without co-producing H and OH to make clear the contribution of O radicals on the removal rate. The removal rate increased slightly with increasing the O<sub>2</sub> additive amount when the filament was unheated. This may be caused by thermal oxidation. On the other hand, the removal rate with a hot filament decreased by the addition of O<sub>2</sub>. In short, the removal rate is not enhanced by O radicals. The enhancement in H<sub>2</sub>/O<sub>2</sub> mixtures must only be ascribed to OH radicals.</p>

    DOI: 10.2494/photopolymer.33.433

    CiNii Article

  • Effects of Nitrogen Dilution on the Photoresist Removal Rate by Hydrogen Radicals Reviewed

    Yamamoto Masashi, Nishioka Hiroto, Akita Koki, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    フォトポリマー学会 Journal of Photopolymer Science and Technology   33 ( 4 )   427 - 431   2020( ISSN:0914-9244

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    Publishing type:Research paper (scientific journal)  

    <p>We have previously demonstrated that photoresist removal rate comparable to oxygen plasma is accomplished by optimizing the removal conditions with H radicals produced on hot metal filament surfaces from H<sub>2</sub>/N<sub>2</sub> mixtures (H<sub>2</sub>:N<sub>2</sub> = 10:90 vol%). N<sub>2</sub> gas was used to dilute the concentration of the H<sub>2</sub> gas and to reduce the risk of explosion. However, it is not clear how the dilution of H<sub>2</sub> by N<sub>2</sub> affects the removal rate. In this paper, we examined the relationship between the removal rate and the H<sub>2</sub> content; the flow rate ratio of H<sub>2</sub> to H<sub>2</sub>+N<sub>2</sub>. The removal rate increased with increasing the H<sub>2</sub> content. In addition, the removal rate increased with increasing the substrate temperature according to an Arrhenius equation, when the H<sub>2</sub> content was over 90%. However, below 60%, the removal rate decreased with increasing the temperature over 230 ± 5 ℃. Denaturation of photoresist, e.g. hardening and/or crosslinking, may be induced by substrate heating when the H-radical density is low. The removal rate decreases not only by the deficiency of H radicals but also by the denaturation of films in H<sub>2</sub>/N<sub>2</sub> mixed systems.</p>

    DOI: 10.2494/photopolymer.33.427

    CiNii Article

  • Evaluation of Decomposition Property of Photoresist by Oxygen Radicals Using Helium-Oxygen Mixtures Reviewed

    Yamamoto Masashi, Akita Koki, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    フォトポリマー学会 Journal of Photopolymer Science and Technology   33 ( 4 )   433 - 437   2020( ISSN:0914-9244

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    Publishing type:Research paper (scientific journal)  

    <p>We have previously demonstrated that photoresist removal rate is enhanced by adding a trace amount of O<sub>2</sub> to the atmosphere in which H radicals are produced from H<sub>2</sub> on a hot metal filament. In this case, not only H radicals but also O and OH radicals are produced. The populations of O and OH radicals are a few hundredth parts of that of H radicals, but these radicals must play important roles. It is not clear which radicals contribute more to the enhancement of the removal rate. We used He/O<sub>2</sub> mixtures in this study, instead of H<sub>2</sub>/O<sub>2</sub>, to produce O radicals without co-producing H and OH to make clear the contribution of O radicals on the removal rate. The removal rate increased slightly with increasing the O<sub>2</sub> additive amount when the filament was unheated. This may be caused by thermal oxidation. On the other hand, the removal rate with a hot filament decreased by the addition of O<sub>2</sub>. In short, the removal rate is not enhanced by O radicals. The enhancement in H<sub>2</sub>/O<sub>2</sub> mixtures must only be ascribed to OH radicals.</p>

    DOI: 10.2494/photopolymer.33.433

    CiNii Article

  • Synthesis and Evaluation of Thermally Curable Hyperbranched Polymers with Low Glass Transition Temperature Reviewed

    Izumi Uehara, Seidai Okada, Hideo Horibe, Eriko Sato

    Japan Thermosetting Plastics Industry Association, Journal of Networkpolymer,Japan   41 ( 3 )   113 - 121   2020( ISSN:2433-3786

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    Publishing type:Research paper (scientific journal)  

    <p>Thermosetting hyperbranched polymers were synthesized by radical copolymerization of dodecyl methacrylate and ethyleneglycol dimethacrylate in the presence of an addition-fragmentation chain transfer agent, methyl 2-(bromomethyl) acrylate. The resulting polymers had a branched structure containing multiple end groups per one polymer chain. By changing the comonomer compositions and the stoichiometric ratio of the total comonomer to the addition-fragmentation chain transfer agent, the glass transition temperatures of the resulting hyperbranched polymers can be controlled in a wide range from -80 ℃ to 13 ℃. The hyperbranched polymer contains multiple vinyl groups, i.e., side-chain vinyl groups (methacryloyl group) derived from ethyleneglycol dimethacrylate unit and ω-end vinyl groups (2-methoxycarbonyl-2- propenyl group) generated by addition-fragmentation chain transfer. Therefore, the hyperbranched polymers underwent spontaneous polymerization above ca. 100 ℃, and exhibited thermosetting properties even in the absence of a radical curing agent. The glass transition temperatures of the hyperbranched polymers were significantly increased to 130 ℃ or higher by thermal curing at 180 ℃for 1 h.</p>

    DOI: 10.11364/networkedpolymer.41.3_113

    CiNii Article

  • Facile synthesis of graft copolymers containing rigid poly(dialkyl fumarate) branches by macromonomer method Reviewed

    Eriko Sato, Noboru Tamari, Hideo Horibe

    Journal of Polymer Science, Part A: Polymer Chemistry   57 ( 24 )   2474 - 2480   2019.12( ISSN:0887-624X

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    Publishing type:Research paper (scientific journal)  

    © 2019 Wiley Periodicals, Inc. Graft copolymers show microphase separated structure as seen in block copolymers and have lower intrinsic viscosity than block copolymers because of a branching structure. Therefore, considering molding processability, especially for polymers containing rigid segments, graft copolymers are useful architectures. In this work, graft copolymers containing rigid poly(diisopropyl fumarate) (PDiPF) branches were synthesized by full free-radical polymerization process. First, synthesis of PDiPF macromonomers by addition-fragmentation chain transfer (AFCT) was investigated. 2,2-Dimethyl-4-methylene-pentanedioic acid dimethyl ester was found to be an efficient AFCT agent for diisopropyl fumarate (DiPF) polymerization because of the suppression of undesired primary radical termination, which significantly took place when common AFCT agent, methyl 2-(bromomethyl)acrylate, was used. Copolymerization of PDiPF macromonomer with ethyl acrylate accomplished the generation of the graft copolymer having flexible poly(ethyl acrylate) backbone and rigid PDiPF branches. The graft copolymer showed a microphase separated structure, high transparency, and characteristic thermal properties to PDiPF and poly(ethyl acrylate). © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2019, 57, 2474–2480.

    DOI: 10.1002/pola.29499

  • Facile synthesis of graft copolymers containing rigid poly(dialkyl fumarate) branches by macromonomer method Reviewed

    Sato Eriko, Tamari Noboru, Horibe Hideo

    JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY   2019.09( ISSN:0887-624X

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pola.29499

  • Photoresist removal using hydrogen radicals produced by tantalum hot-wire catalyst Reviewed

    Masashi Yamamoto, Tomohiro Shiroi, Tomokazu Shikama, Shiro Nagaoka, Hideo Horibe

    AIP Conference Proceedings   2151   2019.08( ISSN:0094-243X ( ISBN:9780735418967

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    © 2019 Author(s). Photoresist removal method using hydrogen radicals produced by decomposing hydrogen on a hot-wire catalyst is one of an environmentally friendly methods. We examined the relationship between photoresist removal rate and its surface temperature and the surface element analysis for a tantalum catalyst. In this study, we considered an adaptability of the catalyst to the removal.

    DOI: 10.1063/1.5124640

  • Thermal Latent Reductants for Controlled Degradation of Polyperoxides and Their Application to High Performance Dismantlable Adhesives Reviewed

    Sato Eriko, Omori Chisato, Yuri Michihiro, Koda Yuta, Horibe Hideo

    ACS APPLIED POLYMER MATERIALS   1 ( 8 )   2140 - 2148   2019.08

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    DOI: 10.1021/acsapm.9b00422

  • Thermal Latent Reductants for Controlled Degradation of Polyperoxides and Their Application to High Performance Dismantlable Adhesives Reviewed

    Eriko Sato, Chisato Omori, Michihiro Yuri, Yuta Koda, Hideo Horibe

    ACS APPLIED POLYMER MATERIALS   1 ( 8 )   2140 - 2148   2019.08( ISSN:2637-6105

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    1-Phenyl-3-pyrazolidone (PhP) having an active hydrogen was blocked by phenyl isocyanate derivatives to reduce its nucleophilicity, and the potential of the blocked PhP as a thermal latent reductant generating the organic reducing agent, PhP, was revealed for the first time. The degree of dissociation of the blocked PhP during heating in solution can be controlled by the steric hindrance of the isocyanate-blocking agents. The thermal latency of the blocked PhP for the sorbic ester-based polyperoxides, which undergo a serious reductive decomposition by PhP even at 30 degrees C, was investigated to accelerate the decomposition of the polyperoxides only at elevated temperatures. It was revealed that the stability of the polyperoxides was not significantly affected at 30 degrees C, and marked reductive decomposition of the polyperoxides together with thermal decomposition took place at elevated temperatures. For the block PhPs, which are highly compatible with the polyperoxides, the decomposition promotion effect increased with increasing the steric hindrance of the blocking agents, and the controlled decomposition of the polyperoxides was successfully achieved. Moreover, the addition of the blocked PhP resulted in the complete solubilization of sorbic ester-based cross-linked polyperoxides by heating, which was not able to be achieved without the blocked PhP. The performance of the debondable adhesive by using the sorbic ester-based cross-linked polyperoxides was improved by the addition of the blocked PhP, although hazardous isocyanate formation during the activation process may limit the practical application. Specifically, a faster decrease in the lap-shear adhesion strength by heating was accomplished. Furthermore, the same level of dismantlability was achieved in the wide range of heating temperatures and time, which is an important requirement for polyperoxides undergoing significant exothermic decomposition bringing about undesired temperature rise.

    DOI: 10.1021/acsapm.9b00422

  • A Comparison of Removal Phenomena in Photoresist Materials Using Laser Irradiation

    Kamimura Tomosumi, Nishioka Naoki, Umeda Yuji, Shima Daichi, Funamoto Yusuke, Harada Yoshiyuki, Yoshimura Masashi, Nakamura Ryosuke, Horibe Hideo

    Journal of Photopolymer Science and Technology   32 ( 4 )   603 - 607   2019.06( ISSN:09149244

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    <p>Resist removal phenomena using laser irradiation were compared in the novolak resist and the PVP. Thresholds for stripping from the Si wafer and damaged at the Si wafer were evaluated for the laser irradiating condition in the normal atmosphere and in the water. The PVP was found to be easy to be stripped as compared with the novolak resist. Only in the water, the photoresist material was completely stripped from the Si wafer surface. The size of the changed area by the laser irradiation for the PVP was approximately 2 times larger than that of the novolak resist. Time-resolved images were also acquired in 400 ns and 7500 ns after the laser irradiation. The scattering condition of the PVP in the removal process was completely different from that of the novolak resist.</p>

    DOI: 10.2494/photopolymer.32.603

    CiNii Article

  • Relationship between Oxygen Additive Amount and Photoresist Removal Rate Using H Radicals Generated on an Iridium Hot-Wire Catalyst

    Yamamoto Masashi, Shiroi Tomohiro, Shikama Tomokazu, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    Journal of Photopolymer Science and Technology   32 ( 4 )   609 - 614   2019.06( ISSN:09149244

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    <p>We examined an environmentally friendly photoresist removal method using radicals produced by decomposing mixtures of hydrogen and oxygen on a hot iridium catalyst. We earlier reported that the decomposition of photoresists was hastened by adding oxygen gas to a hydrogen flow using a tungsten hot-wire catalyst. The rate increased with the oxygen additive amount up to about 1.0% and then decreased gradually. The decrease is caused by the catalytic poisoning of O atoms on the catalyst surface because of its poor oxidation resistance. In present study, we show that oxygen addition without catalytic poisoning is effective to increase the decomposition rate. The poisoning can be avoided by using an Ir catalyst. The decomposition rate increased with the substrate temperature. The rate also increased rapidly with increasing amounts of added oxygen to 1.0% and then the increase became more gradual. OH radicals must play an important role to hasten the decomposition reactions.</p>

    DOI: 10.2494/photopolymer.32.609

    CiNii Article

  • Oxygen additive effects on decomposition rate of poly(vinyl phenol)-based polymers using hydrogen radicals produced by a tungsten hot-wire catalyst Reviewed

    Yamamoto Masashi, Nagaoka Shiro, Ohdaira Keisuke, Umemoto Hironobu, Horibe Hideo

    THIN SOLID FILMS   679   22 - 26   2019.06( ISSN:0040-6090

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    DOI: 10.1016/j.tsf.2019.03.035

  • Oxygen additive effects on decomposition rate of poly(vinyl phenol)-based polymers using hydrogen radicals produced by a tungsten hot-wire catalyst Reviewed

    Masashi Yamamoto, Shiro Nagaoka, Keisuke Ohdaira, Hironobu Umemoto, Hideo Horibe

    Thin Solid Films   679   22 - 26   2019.06( ISSN:0040-6090

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    © 2019 Elsevier B.V. For fabricating semiconductor devices and for microelectromechanical systems, photoresists are important materials supporting photolithography processes. However, photoresists must be removed for subsequent processes. An earlier study demonstrated that adding a small amount of oxygen gas to the atmosphere in which hydrogen radicals are produced increased the decomposition rate of a positive-tone novolac photoresist. For this study, we prepared polymers with different side chain structures based on poly(vinyl phenol) (PVP). We examined the effects of added oxygen and the oxygen-added hydrogen radicals on the decomposition rates of PVP-based polymers. Hydroxyl groups of PVP are partly substituted with tert-butoxycarbonyl groups in order to use for base polymer of KrF photoresist. Results show that oxygen addition can be useful for KrF photoresist removal.

    DOI: 10.1016/j.tsf.2019.03.035

  • Formation of a single poly(N,N-diethylacrylamide) micro-droplet in water by coupling of photothermal effects and an optical force Reviewed

    M. Matsumoto, T. Asoh, T. Shoji, T. Nishiyama, Hideo Horibe, Yukiteru Katsumoto, Yasuyuki Tsuboi

    Journal of Physics: Conference Series   1220 ( 1 )   2019.05( ISSN:1742-6588

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    © Published under licence by IOP Publishing Ltd. Poly(N-isopropylacrylamide) (PNIPAM) exhibits phase separation with lower critical solution temperature (LCST). In the 1990s, Masuhara and co-workers reported the first demonstration of optical trapping of PNIPAM forming a micrometer-sized polymer droplet. Since then, this technique has attracted much attention to create a molecular assembly in a microspace. In the present study, we targeted poly(N,N-diethylacrylamide) (PDEA), which has an analogous chemical structure to PNIPAM. We demonstrated that optical tweezers formed the unique micro-morphologies of a phase separated PDEA droplet. Fluorescence microscopic images and Raman spectra of the PDEA droplet showed that a lot of smaller-sized water-rich micro-domains were inhomogeneously formed in the droplet. Such unique phase separation behavior was never observed in steady-state heating of an aqueous PDEA solution above its LCST. Our results indicate that a novel micro-structure can be formed by coupling of an optical gradient force and a local temperature elevation.

    DOI: 10.1088/1742-6596/1220/1/012034

  • Regiospecificity of Alternating Copolymerization of Cyclic Conjugated Dienes and Oxygen

    Sato Eriko, Taketani Shuji, Omori Chisato, Horibe Hideo, Matsumoto Akikazu

    Chemistry Letters   48 ( 5 )   445 - 448   2019.05( ISSN:03667022

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    <p>Alternating radical copolymerization of cyclic conjugated diene monomers, i.e., cyclopentadiene and furan, with oxygen were carried out to generate degradable polyperoxides. The cyclopentadiene and furan based-polyperoxides consisted of different regiospecific structures. The regiospecificity of the alternating copolymerization was rationalized by the bond dissociation energies of the carbon-to-oxygen bond of the peroxy radicals based on density functional theory calculations. The thermal degradation behavior of the resulting cyclic conjugated diene-based polyperoxides was also investigated.</p>

    DOI: 10.1246/cl.181047

    CiNii Article

  • Regiospecificity of Alternating Copolymerization of Cyclic Conjugated Dienes and Oxygen Reviewed

    Sato Eriko, Taketani Shuji, Omori Chisato, Horibe Hideo, Matsumoto Akikazu

    CHEMISTRY LETTERS   48 ( 5 )   445 - 448   2019.05( ISSN:0366-7022

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    DOI: 10.1246/cl.181047

    CiNii Article

  • Reductants for polyperoxides to accelerate degradation at elevated temperatures Reviewed

    Sato Eriko, Yuri Michihiro, Matsumoto Akikazu, Horibe Hideo

    POLYMER DEGRADATION AND STABILITY   162   47 - 54   2019.04( ISSN:0141-3910

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    DOI: 10.1016/j.polymdegradstab.2019.01.030

  • Reductants for polyperoxides to accelerate degradation at elevated temperatures Reviewed

    Eriko Sato, Michihiro Yuri, Akikazu Matsumoto, Hideo Horibe

    Polymer Degradation and Stability   162   47 - 54   2019.04( ISSN:0141-3910

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    © 2019 Elsevier Ltd The alternating copolymer of a conjugated diene monomer and oxygen, i.e., polyperoxide, is a main-chain degradable polymer and undergoes radical chain degradation by heating. During the degradation process, oxygen-centered radicals are formed and thus side reactions such as hydrogen abstraction from the polymer by the oxygen-centered radicals and subsequent coupling, which prevent the degradation, sometimes take place. In this study, in order to promote the degradation of polyperoxides only at elevated temperatures while maintaining their stability at ambient temperature, appropriate organic reductants, which do not significantly react with the polyperoxides at 30 °C but react at 100 °C, were explored. N,N-Dimethylaniline, which is a conventional reductant for redox initiation systems, initiated the redox degradation of cyclopentadiene-based polyperoxides even at 30 °C due to the very high nucleophilicity. The introduction of an electron donating group at the para position, i.e., 4-dimethylaminoacetophenone, 4-dimethylaminobenzaldehyde, and 4-dimethylaminobenzonitrile, successfully maintained the stability of the polyperoxide at 30 °C and accelerated the degradation at 100 °C due to the reduced nucleophilicity. Similar results were obtained by using 1-acetyl-2-phenylhydrazine and 1-phenyl-3-pyrazolidone (PhP) as a reductant, and PhP resulted in the most significant acceleration effect at 100 °C. The activation energy for the overall degradation of the polyperoxide in the presence of PhP was much lower than that of the polyperoxide in the absence of a reductant. In the case of sorbic ester-based polyperoxides, their stabilities at 30 °C were not maintained in the presence of the reductants and the stability was improved by increasing the 2,5 structure regarding the diene moiety in the main-chain.

    DOI: 10.1016/j.polymdegradstab.2019.01.030

  • Relationship between Oxygen Additive Amount and Photoresist Removal Rate Using H Radicals Generated on an Iridium Hot-Wire Catalyst Reviewed

    Yamamoto Masashi, Shiroi Tomohiro, Shikama Tomokazu, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    フォトポリマー学会 Journal of Photopolymer Science and Technology   32 ( 4 )   609 - 614   2019( ISSN:0914-9244

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    <p>We examined an environmentally friendly photoresist removal method using radicals produced by decomposing mixtures of hydrogen and oxygen on a hot iridium catalyst. We earlier reported that the decomposition of photoresists was hastened by adding oxygen gas to a hydrogen flow using a tungsten hot-wire catalyst. The rate increased with the oxygen additive amount up to about 1.0% and then decreased gradually. The decrease is caused by the catalytic poisoning of O atoms on the catalyst surface because of its poor oxidation resistance. In present study, we show that oxygen addition without catalytic poisoning is effective to increase the decomposition rate. The poisoning can be avoided by using an Ir catalyst. The decomposition rate increased with the substrate temperature. The rate also increased rapidly with increasing amounts of added oxygen to 1.0% and then the increase became more gradual. OH radicals must play an important role to hasten the decomposition reactions.</p>

    DOI: 10.2494/photopolymer.32.609

    CiNii Article

  • Oxidative Decomposition of Organic Compounds by Ozone Microbubbles in Water Reviewed

    Koda Yuta, Miyazaki Terumi, Sato Eriko, Horibe Hideo

    フォトポリマー学会 Journal of Photopolymer Science and Technology   32 ( 4 )   615 - 618   2019( ISSN:0914-9244

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    <p>Oxidative degradation of poly(ethylene glycol) (PEG) by ozone microbubbles (O<sub>3</sub>MBs) was investigated in water. Ozone water are generally effective in oxidation reaction with a variety of organic compounds. O<sub>3</sub>MBs have promise to improve the efficiency because it seems that O<sub>3</sub>MBs generates hydroxy radicals, resulting in the higher active oxidative degradation. Herein, oxidative decomposition of PEG by O<sub>3</sub>MBs in water was carried out and the products were characterized by <sup>1</sup>H nuclear magnetic resonance (NMR) and matrix assisted laser desorption/ionization fourier transform ion cyclotron resonance mass spectrometry (MALDI-FT-ICR-MS). Through the continuous struggles, decomposition of PEG was promoted by O<sub>3</sub>MBs. It was found that O<sub>3</sub>MBs with hydrogen peroxide added had the largest decomposition effect. The reason has been veiled yet, however, the author reasons that O<sub>3</sub>MBs have promise as the novel degradation system.</p>

    DOI: 10.2494/photopolymer.32.615

    CiNii Article

  • A Comparison of Removal Phenomena in Photoresist Materials Using Laser Irradiation Reviewed

    Kamimura Tomosumi, Nishioka Naoki, Umeda Yuji, Shima Daichi, Funamoto Yusuke, Harada Yoshiyuki, Yoshimura Masashi, Nakamura Ryosuke, Horibe Hideo

    フォトポリマー学会 Journal of Photopolymer Science and Technology   32 ( 4 )   603 - 607   2019( ISSN:0914-9244

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    <p>Resist removal phenomena using laser irradiation were compared in the novolak resist and the PVP. Thresholds for stripping from the Si wafer and damaged at the Si wafer were evaluated for the laser irradiating condition in the normal atmosphere and in the water. The PVP was found to be easy to be stripped as compared with the novolak resist. Only in the water, the photoresist material was completely stripped from the Si wafer surface. The size of the changed area by the laser irradiation for the PVP was approximately 2 times larger than that of the novolak resist. Time-resolved images were also acquired in 400 ns and 7500 ns after the laser irradiation. The scattering condition of the PVP in the removal process was completely different from that of the novolak resist.</p>

    DOI: 10.2494/photopolymer.32.603

    CiNii Article

  • Relationship between Oxygen Additive Amount and Photoresist Removal Rate Using H Radicals Generated on an Iridium Hot-Wire Catalyst Reviewed

    Yamamoto Masashi, Shiroi Tomohiro, Shikama Tomokazu, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   32 ( 4 )   609 - 614   2019( ISSN:0914-9244

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  • Oxidative Decomposition of Organic Compounds by Ozone Microbubbles in Water Reviewed

    Koda Yuta, Miyazaki Terumi, Sato Eriko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   32 ( 4 )   615 - 618   2019( ISSN:0914-9244

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  • Formation of a single poly(N,N-diethylacrylamide) micro-droplet in water by coupling of photothermal effects and an optical force Reviewed

    Matsumoto M., Asoh T., Shoji T., Nishiyama T., Horibe Hideo, Katsumoto Yukiteru, Tsuboi Yasuyuki

    12TH INTERNATIONAL CONFERENCE ON EXCITONIC AND PHOTONIC PROCESSES IN CONDENSED MATTER AND NANO MATERIALS (EXCON 2018)   1220   2019( ISSN:1742-6588

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    DOI: 10.1088/1742-6596/1220/1/012034

  • A Comparison of Removal Phenomena in Photoresist Materials Using Laser Irradiation Reviewed

    Kamimura Tomosumi, Nishioka Naoki, Umeda Yuji, Shima Daichi, Funamoto Yusuke, Harada Yoshiyuki, Yoshimura Masashi, Nakamura Ryosuke, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   32 ( 4 )   603 - 607   2019( ISSN:0914-9244

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  • Dynamics of the Phase Separation in a Thermoresponsive Polymer: Accelerated Phase Separation of Stereocontrolled Poly(N,N-diethylacrylamide) in Water Reviewed

    Matsurnoto Mitsuhiro, Tada Takanori, Asoh Taka-Aki, Shoji Tatsuya, Nishiyama Takashi, Horibe Hideo, Katsumoto Yukiteru, Tsuboi Yasuyuki

    LANGMUIR   34 ( 45 )   13690 - 13696   2018.11( ISSN:0743-7463

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    DOI: 10.1021/acs.langmuir.8b02848

  • Dynamics of the Phase Separation in a Thermoresponsive Polymer: Accelerated Phase Separation of Stereocontrolled Poly(N, N-diethylacrylamide) in Water Reviewed

    Mitsuhiro Matsumoto, Takanori Tada, Taka Aki Asoh, Tatsuya Shoji, Takashi Nishiyama, Hideo Horibe, Yukiteru Katsumoto, Yasuyuki Tsuboi

    Langmuir   34 ( 45 )   13690 - 13696   2018.11( ISSN:0743-7463

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    © 2018 American Chemical Society. We studied the dependence on tacticity of the dynamic phase separation behavior of thermoresponsive poly(N,N-diethylacrylamide) (PDEA) in an aqueous solution. Using a laser temperature-jump technique combined with transient photometry, we determined the time constants of the phase separation and found that both atactic and isotactic-rich PDEAs had fast and slow phase separation processes (τfast and τslow). The fast process (τfast) was independent of the tacticity, irrespective of the concentration. On the other hand, the slow process had a strong dependence on the tacticity. We found the slow phase separation process got considerably faster with increasing isotacticity in dilute solutions. This effect due to the tacticity of the PDEA is totally different from that of poly(N-isopropylacrylamide) and can be explained on the basis of the difference between the hydrophobicity of atactic PDEA and that of isotactic-rich PDEA.

    DOI: 10.1021/acs.langmuir.8b02848

    PubMed

  • Cross-linked Polyperoxides for Photoremovable Adhesives

    Sato Eriko, Omori Chisato, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   31 ( 4 )   511 - 515   2018.06( ISSN:09149244

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    Photoremovability of cross-linked polyperoxides was investigated considering the application to dismantlable adhesives. Applying lap-shear stress on the glass joints bonded by the cross-linked polyperoxides, i.e., the alternating copolymer of 2-hydroxyethyl sorbate and oxygen cross-linked by tolylene 2,4-diisocyanate, resulted in the failure of the glass adherend. UV irradiation on the bonded glass joints more than 19 J/cm<sup>2</sup> resulted in a significant decrease in the lap-shear adhesion strength due to the photodegradation of the cross-linked polyperoxides, and the bonded glass joints were successfully debonded without breaking the glass adherends. The failure mode was the cohesive failure of the adhesive and the residue of the cross-linked polyperoxides heavily adhered on the both debonded glass adherends. The additional photoirradiation on the debonded glass adherends in tetrahydrofuran resulted in the significant removal of the adhered cross-linked polyperoxide due to the further photodegradation. After 150 J/cm<sup>2</sup> irradiation, the adhesive residues were completely wiped off from the glass adherends.

    DOI: 10.2494/photopolymer.31.511

    CiNii Article

  • Time-resolved Analysis of Resist Stripping Phenomenon Using Laser Irradiation

    Kamimura Tomosumi, Umeda Yuji, Kuramae Hiroyuki, Nuno Kosuke, Nakamura Ryosuke, Horibe Hideo

    Journal of Photopolymer Science and Technology   31 ( 3 )   413 - 418   2018.06( ISSN:09149244

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    Resist stripping phenomenon with laser irradiation was observed by using a time-resolved analysis. The time change of the resist stripping phenomenon by a probe laser irradiation was observed from the viewpoint of the intensity change of the probe laser. As for the laser irradiation in the water, the probe laser intensity arrived at the maximum after around 40 μs. During the pump laser irradiation of 8 ns, a large compressive stress of -10 MPa was confirmed inside the resist from the FE analysis results. The generation of this compression stress is important for starting the resist stripping process, and is thought to improve the resist removal efficiency.

    DOI: 10.2494/photopolymer.31.413

    CiNii Article

  • Removal of Polymers for KrF and ArF Photoresist Using Hydrogen Radicals Containing a Small Amount of Oxidizing Radicals

    Yamamoto Masashi, Taki Tomohiro, Sunada Takuto, Shikama Tomokazu, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    Journal of Photopolymer Science and Technology   31 ( 3 )   419 - 424   2018.06( ISSN:09149244

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    Photoresist removal method using hydrogen radicals, which are produced on a tungsten hot-wire catalyst, is effective to resolve some environmental and industrial problems in conventional methods for the fabrication of electronic devices. However, its removal rate is not as good as that of the conventional ones. We have previously described that the removal rate of a positive-tone novolac photoresist is enhanced by the addition of a small amount of oxygen gas to the atmosphere, in which hydrogen radicals are produced. Oxidizing radicals, such as OH and O radicals, can be produced together with H radicals. In present study, we examined the effects of oxygen addition on base polymers of KrF and ArF photoresists: the former is poly(vinyl phenol) (PVP), and the latter is poly(methyl methacrylate) (PMMA). Effects of oxygen addition on PVP was confirmed, as was found for the novolac photoresist. On the other hand, the effects on PMMA were different from the cases of the novolac photoresist and PVP. Results were ascribed to the presence or absence of benzene rings, the properties of polymers and the reactivity of oxidizing radicals.

    DOI: 10.2494/photopolymer.31.419

    CiNii Article

  • Fabrication of Mesoscopic Structure on PMMA Surface by Atomic Hydrogen and Evaluation of the Surface Functionality

    Matsuo Akari, Takagi Seiji, Nishiyama Takashi, Yamamoto Masashi, Sato Eriko, Horibe Hideo

    Journal of Photopolymer Science and Technology   31 ( 3 )   369 - 372   2018.06( ISSN:09149244

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    Surface properties of polymers such as wettability and adhesiveness play an important role in industrial applications. The properties can be enhanced by fabricating a mesoscopic structure to the surface. In this study, we examined a chemical etching which is a simple and direct technique for the surface profile control, using atomic hydrogen generated by hot-wire catalytic method. Several tens of nanoscale structures were fabricated on poly(methyl methacrylate) (PMMA) surface by atomic hydrogen irradiation, and the size and pitch of the structure could be controlled by reaction temperature and time. The wettability of PMMA film surface changed from hydrophilicity to hydrophobicity by formation of mesoscopic structures.

    DOI: 10.2494/photopolymer.31.369

    CiNii Article

  • Development of Dissolution Inhibitor in Chemically Amplified Positive Tone Thick Film Resist

    Sotokawa Yusuke, Nishiyama Takashi, Sato Eriko, Horibe Hideo

    Journal of Photopolymer Science and Technology   31 ( 3 )   399 - 402   2018.06( ISSN:09149244

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    Thick film resist is applied to a template for microelectrode used in semiconductor device integration. Utilization of positive type resist in chemically amplified system for thick film is expected to improve production efficiency of semiconductor device integration, but improvement of resolution is required. In order to improve the resolution of chemically amplified positive tone thick film resist, chemical structure of the dissolution inhibitor (DI) was designed for the control of solubility in resist polymer. The increase of molecular size in DI improved the dissolution inhibiting ability for the resist polymer in the unexposed area and the high acidity of the deprotected DI having carboxyl group improved dissolution promoting ability for the resist polymer in the exposed area. The resist containing DI possessing a large molecular size and high acidity improved its sensitivity and resolution.

    DOI: 10.2494/photopolymer.31.399

    CiNii Article

  • Degradation of Poly(acrylic acid) in Aqueous Solution by Using O<sub>3</sub> Microbubble

    Miyazaki Terumi, Nishiyama Takashi, Sato Eriko, Horibe Hideo

    Journal of Photopolymer Science and Technology   31 ( 3 )   409 - 412   2018.06( ISSN:09149244

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    Polyacrylic acid (PAA) aqueous solution was treated with O<sub>3</sub> microbubbles and O<sub>3</sub> water, there was no difference in decrease in molecular weight of PAA due to the presence or absence of microbubbles. Regardless of dissolved O<sub>3</sub> concentration, O<sub>3</sub> microbubbles alone did not cause reduction in TOC and mineralization did not proceed. In the advanced oxidation proses with hydrogen peroxide added, the molecular weight and TOC decreased. It is considered that active oxygen is generated from hydrogen peroxide by advanced oxidation and PAA is decomposed. From these results, it is no considered generation of reactive oxygen species by microbubbles in the decomposition of PAA.

    DOI: 10.2494/photopolymer.31.409

    CiNii Article

  • アロイ・ブレンド・コンポジット

    堀邊 英夫, 水野 渡, 宮田 剣

    成形加工   30 ( 5 )   191   2018.04( ISSN:09154027

  • Time-resolved Analysis of Resist Stripping Phenomenon Using Laser Irradiation Reviewed

    Kamimura Tomosumi, Umeda Yuji, Kuramae Hiroyuki, Nuno Kosuke, Nakamura Ryosuke, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   31 ( 3 )   413 - 418   2018( ISSN:0914-9244

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  • Removal of Polymers for KrF and ArF Photoresist Using Hydrogen Radicals Containing a Small Amount of Oxidizing Radicals Reviewed

    Yamamoto Masashi, Taki Tomohiro, Sunada Takuto, Shikama Tomokazu, Nagaoka Shiro, Umemoto Hironobu, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   31 ( 3 )   419 - 424   2018( ISSN:0914-9244

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  • Raman microspectroscopic study on an optically formed poly(N-isopropylacrylamide) rich microparticle: molecular weight dependence of a polymer concentration in the particle Reviewed

    Fujiwara Kayo, Shoji Tatsuya, Matsumoto Mitsuhiro, Asoh Taka-Aki, Nishiyama Takashi, Horibe Hideo, Tsuboi Yasuyuki

    OPTICAL MANIPULATION CONFERENCE   10712   2018( ISSN:0277-786X

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    DOI: 10.1117/12.2319560

  • Fabrication of Mesoscopic Structure on PMMA Surface by Atomic Hydrogen and Evaluation of the Surface Functionality Reviewed

    Matsuo Akari, Takagi Seiji, Nishiyama Takashi, Yamamoto Masashi, Sato Eriko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   31 ( 3 )   369 - 372   2018( ISSN:0914-9244

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  • Development of Dissolution Inhibitor in Chemically Amplified Positive Tone Thick Film Resist Reviewed

    Sotokawa Yusuke, Nishiyama Takashi, Sato Eriko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   31 ( 3 )   399 - 402   2018( ISSN:0914-9244

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  • Degradation of Poly(acrylic acid) in Aqueous Solution by Using O-3 Microbubbule Reviewed

    Miyazaki Terumi, Sato Eriko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   31 ( 3 )   409 - 412   2018( ISSN:0914-9244

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  • Cross-linked Polyperoxides for Photoremovable Adhesives Reviewed

    Sato Eriko, Omori Chisato, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   31 ( 4 )   511 - 515   2018( ISSN:0914-9244

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  • アロイ・ブレンド・コンポジット Reviewed

    堀邊 英夫, 水野 渡, 宮田 剣

    一般社団法人 プラスチック成形加工学会 成形加工   30 ( 5 )   2018( ISSN:0915-4027

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    DOI: 10.4325/seikeikakou.30.191

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  • Raman microspectroscopic study on an optically formed poly(N-isopropylacrylamide) rich microparticle: Molecular weight dependence of a polymer concentration in the particle Reviewed

    Kayo Fujiwara, Tatsuya Shoji, Mitsuhiro Matsumoto, Taka Aki Asoh, Takashi Nishiyama, Hideo Horibe, Yasuyuki Tsuboi

    Proceedings of SPIE - The International Society for Optical Engineering   10712   2018( ISSN:0277-786X

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    © 2018 SPIE. Poly(N-isopropylacrylamide) solution, which is a representative thermoresponsive polymer, exhibits a phase separation with a formation of polymer-rich microparticles due to dehydration and aggregation of the polymer chains above a lower critical solution temperature (LCST). However, little is known about the details of polymer concentration in the particle. We have developed optical tweezers combined with confocal Raman microspectroscopy to analyze a hydration structure in a single polymer rich particle. A focused near-infrared laser beam produced the microparticle at the focal point due to an optical force and a photothermal effect. In this study, we investigated that molecular weight dependence of the polymer concentration in the polymer-rich particle by means of Raman microspectroscopy.

    DOI: 10.1117/12.2319560

  • Dismantlable adhesion properties of reactive acrylic copolymers resulting from cross-linking and gas evolution Reviewed

    Eriko Sato, Shusei Iki, Keisuke Yamanishi, Hideo Horibe, Akikazu Matsumoto

    Journal of Adhesion   93 ( 10 )   811 - 822   2017.08( ISSN:0021-8464

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    © 2017 Taylor & Francis. The acrylic copolymers involving 2-hydroxyethyl acrylate (HEA) and tert-butyl acrylate (tBA) units as reactive units behave as pressure-sensitive adhesive type dismantlable adhesive materials. In order to clarify the individual role of HEA and tBA units on dismantlability, the 180° peel behavior after the dismantling treatment, i.e., heating in the presence of given amount of acid catalysts, was systematically investigated using the acrylic copolymers involving different amounts of the reactive units. It was revealed that transesterification of HEA units resulted in an increase in the cohesive force and modulus due to an increase in the molecular weight and cross-linking. Deprotection of tBA units, i.e., transformation of tBA to acrylic acid (AA) unit with isobutene evolution, promoted cross-linking by the esterification of AA units and tended to reduce a cohesive force by forming voids in the adhesive layer due to the evolution of isobutene gas. Interfacial failure in the peel tests corresponded with a high degree of cross-linking and increased modulus of the adhesive. Conversely, cohesive failure was associated with reduced cohesive strength of the adhesive layer and a low peel strength.

    DOI: 10.1080/00218464.2016.1209114

  • Decomposition processes of photoresist polymers by H atoms produced on hot wire surfaces Reviewed

    Umemoto Hironobu, Kato Teruto, Takiguchi Masayuki, Takagi Seiji, Horibe Hideo

    THIN SOLID FILMS   635   27 - 31   2017.08( ISSN:0040-6090

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    DOI: 10.1016/j.tsf.2016.12.013

  • Decomposition processes of photoresist polymers by H atoms produced on hot wire surfaces Reviewed

    Hironobu Umemoto, Teruto Kato, Masayuki Takiguchi, Seiji Takagi, Hideo Horibe

    Thin Solid Films   635   27 - 31   2017.08( ISSN:0040-6090

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    © 2016 Elsevier B.V. Mass spectrometry was used to identify the decomposition products of two typical photoresist polymers, Novolak and polymethylmethacrylate, by H atoms produced on hot wire surfaces. The production of CH4 and CO was confirmed for both polymers. Other possible products are C3H8, C4H10 or C4H8, and some esters such as CH3COOC2H5. The production of CO2, C2H4, C2H6, alcohols, and aromatics are minor. The possible decomposition mechanisms are discussed on the basis of density functional calculations of the energetics.

    DOI: 10.1016/j.tsf.2016.12.013

  • Effect of solvents on the crystal formation of poly (vinylidene fluoride) film prepared by a spin-coating process Reviewed

    Takashi Nishiyama, Takayuki Sumihara, Eriko Sato, Hideo Horibe

    Polymer Journal   49 ( 3 )   319 - 325   2017.03( ISSN:0032-3896

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    © 2017 The Society of Polymer Science, Japan (SPSJ) All rights reserved. The effect of the solvent evaporation rate and solvent type on the crystal formation of poly(vinylidene fluoride) (PVDF) prepared by spin-coating was evaluated over time. In the much-solvent-remaining state, the crystalline phase of PVDF changed in the order of α, γ and β with the increasing dipole moment of the solvent. In the almost-all-solvent-evaporated state, the crystalline structure of PVDF/hexamethylphosphoramide with a higher dipole moment was dominantly dependent on the evaporation rate and varied in the order of β, γ and α with the increasing solvent evaporation rate. However, PVDF/triethyl phosphate, having a lower dipole moment, always formed the α phase, regardless of the evaporation rate. The PVDF α phase in the concentrated solution state is difficult to transform into the β and γ phases because the potential energy of each PVDF crystalline phase increases in the order of α, γ and β. The PVDF crystalline phase in the spin-coating method is strongly affected by both the polymer-solvent electrostatic interactions and the evaporation conditions. From the results of the crystal transition behavior, it was experimentally supported that the potential energy of the PVDF crystalline structure increases in the order of α, γ and β.

    DOI: 10.1038/pj.2016.116

  • Effect of solvents on the crystal formation of poly (vinylidene fluoride) film prepared by a spin-coating process Reviewed

    Nishiyama Takashi, Sumihara Takayuki, Sato Eriko, Horibe Hideo

    POLYMER JOURNAL   49 ( 3 )   319 - 325   2017.03( ISSN:0032-3896

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    DOI: 10.1038/pj.2016.116

  • Coumarin-containing Polymers as Thermo- and Photo-responsive Polymers: Copolymerization with Solvophilic or Solvophobic Comonomers to Control Thermoresponsive Behavior Reviewed

    Sato Eriko, Nakanishi Ryota, Nishiyama Takashi, Horibe Hideo

    CHEMISTRY LETTERS   46 ( 1 )   108 - 110   2017.01( ISSN:0366-7022

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    DOI: 10.1246/cl.160907

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  • Quantification of Positive Temperature Coefficient Effect on Polymers Filled with Conductive Particles Reviewed

    Nishiyama Takashi, Sato Eriko, Yamato Masafumi, Horibe Hideo

    The Japan Society of Polymer Processing, Seikei-Kakou   29 ( 1 )   25 - 31   2017( ISSN:0915-4027

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    &emsp;Polymer composites filled with conductive particles such as metal, carbon black (CB) and nanotube (CNT) exhibit electro conductivity, and their resistivity significantly increases with raising temperature. Particularly, semicrystalline polymer composites possess superior electro conductivity and positive temperature coefficient (PTC) effect, because conductive particles effectively connect by localizing in the amorphous phase and disconnect by a greater volume expansion near the melting point. In this study, we quantitatively analyzed the PTC effect of various composites consisting of semi-or non-crystalline polymers filled with metal or carbon particles by calculating their filler contents considering thermal volume expansion rate and degree of crystal, as a guideline for design of sensor and circuit protection devices. The revised filler content at room temperature, <i>φ</i> (R.T.) of poly (vinylidene fluoride) (PVDF) / nickel, CB and CNT as semicrystalline polymer composites became higher than the amount of filler loading in preparation and drastically decreased as temperature increased. In contrast, <i>φ</i> (R.T.) of poly (methyl methacrylate)(PMMA) / CB and CNT as noncrystalline polymer composites gradually decreased with temperature. The rate of the revised filler content at PTC, <i>φ</i> (PTC) and <i>φ</i> (R.T.) at various amounts of filler loading in preparation was a constant value in each composite, and <i>φ</i> (PTC) / <i>φ</i> (R.T.) values of PVDF / Ni, PVDF / CB,PVDF / CNT. PMMA / CB and PMMA / CNT were 0.93, 0.78, 0.74, 0.95 and 0.96, respectively. These values indicate the filler content necessary to occurring PTC effect. In comparison of each <i>φ</i> (PTC) / <i>φ</i> (R.T.) value, semicrystalline polymer and carbon filler systems were lower. The results well represent the effect of particle localization in the amorphous phase of semicrystalline polymer and strong interaction of carbon nanofillers for the PTC characteristics.

    DOI: 10.4325/seikeikakou.29.25

    CiNii Article

  • Pressure Dependence of Photoresist Removal Rate Using Hydrogen Radicals Reviewed

    Yamamoto Masashi, Shiroi Tomohiro, Nagaoka Shiro, Shikama Tomokazu, Umemoto Hironobu, Ohdaira Keisuke, Takagi Seiji, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   30 ( 3 )   297 - 301   2017( ISSN:0914-9244

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  • Photoresist Removal Using H Radicals Generated by Iridium Hot-Wire Catalyst Reviewed

    Yamamoto Masashi, Nagaoka Shiro, Umemoto Hironobu, Ohdaira Keisuke, Nishiyama Takashi, Horibe Hideo

    INTERNATIONAL JOURNAL OF POLYMER SCIENCE   2017( ISSN:1687-9422

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    DOI: 10.1155/2017/2983042

  • Photocuring of Radically Polymerizable Hyperbranched Polymers Having Degradable Linkages Reviewed

    Sato Eriko, Yamashita Yoji, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   30 ( 2 )   241 - 246   2017( ISSN:0914-9244

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  • Dissolution Promotion Effect of Addition of Low Molecular Compounds to Positive Tone Chemically Amplified Photoresist System Reviewed

    Takamori Kazuma, Nishiyama Takashi, Sato Eriko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   30 ( 3 )   281 - 284   2017( ISSN:0914-9244

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  • Dismantlable adhesion properties of reactive acrylic copolymers resulting from cross-linking and gas evolution Reviewed

    Sato Eriko, Iki Shusei, Yamanishi Keisuke, Horibe Hideo, Matsumoto Akikazu

    JOURNAL OF ADHESION   93 ( 10 )   811 - 822   2017( ISSN:0021-8464

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    DOI: 10.1080/00218464.2016.1209114

  • Degradation of Hydrophilic Polymers in Aqueous Solution by Using Ozone Microbubble Reviewed

    Nishiyama Takashi, Matsuura Kohei, Sato Eriko, Kometani Noritsugu, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   30 ( 3 )   285 - 289   2017( ISSN:0914-9244

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  • Analysis of Resist Removal Phenomenon Using Laser Irradiation Reviewed

    Kamimura Tomosumi, Kuramae Hirouki, Yamashiro Takayuki, Nuno Kosuke, Umeda Yuji, Tsujimoto Singo, Nakamura Ryosuke, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   30 ( 3 )   291 - 295   2017( ISSN:0914-9244

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  • 22 Chemical Structure of the Ion Beam Irradiated Polymer Reviewed

    Horibe Hideo

    Japan Radioisotope Association, RADIOISOTOPES   66 ( 11 )   567 - 577   2017( ISSN:0033-8303

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    <p>We investigated the chemical structure of positive-tone novolak photoresists into which B, P, and As ions were implanted with doses of 5×10<sup>12</sup> to 5×10<sup>15</sup> atoms/cm<sup>2</sup>. The thickness of the surface-hardened layer of ion-implanted photoresists increased in the order As–P–B. The energy supplied from the ions to the photoresist concentrated on the surface side in the increasing order of B–P–As. The photoresists are exhibitting carbonization and/or cross-linkage attributable to the decrease in OH, CH, and O<sub>1s</sub> and the increase in C=C, C<sub>1s</sub>, and π-conjugated systems.</p>

    DOI: 10.3769/radioisotopes.66.567

    CiNii Article

  • 21 Material Design of the Chemically Amplified Positive Type Electron Beam Resist Reviewed

    Horibe Hideo

    Japan Radioisotope Association, RADIOISOTOPES   66 ( 11 )   557 - 566   2017( ISSN:0033-8303

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    <p>The dissolution characteristics of a chemically amplified electron beam (EB) resist composed of partially <i>tert</i>-butoxycarbonyl group (<i>t</i>BOC) protected poly(<i>p</i>-vinylphenol)(PVP), a dissolution inhibitor, and an acid generator were investigated. The resist sensitivity was improved with decreasing <i>t</i>BOC ratio of the matrix resin. As the <i>t</i>BOC ratio increased, the resolution of the resist was better. SEM observation of the pattern profile was carried out to investigate the sensitivity and the resolution of the resist. The optimum <i>t</i>BOC ratio was 23.8%. As dissolution inhibitors, hydroquinone protected by a <i>tert</i>-butoxycarbonyl group(B-HQ) and isophthalic acid protected by a <i>tert</i>-butyl group(B-IP) are used. Dissolution inhibitors (B-HQ and B-IP) become dissolution promoters (HQ and IP) after exposure. The dissolution rate of the resist consisting of B-IP was faster than that of B-HQ in the exposed area. Pka of IP is smaller than that of HQ, and the acidity of IP is higher than that of HQ. Therefore IP enhances the solubility of the matrix resin in the alkaline developer. We evaluated the dependence of sensitivity of the resist upon acid generators. Triphenylsulfonium triflate, Diphenyliodonium triflate, Triphenylsulfonium antimonate, and Diphenyliodonium antimonate were used. When iodonium ion was used as cation, the sensitivity of the resist was better. When antimonate ion as anion was used, the sensitivity of the resist was better.</p>

    DOI: 10.3769/radioisotopes.66.557

    CiNii Article

  • Pressure Dependence of Photoresist Removal Rate Using Hydrogen Radicals

    Yamamoto Masashi, Shiroi Tomohiro, Nagaoka Shiro, Shikama Tomokazu, Umemoto Hironobu, Ohdaira Keisuke, Takagi Seiji, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   30 ( 3 )   297 - 301   2017( ISSN:09149244

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    Photoresists play a key role in lithography processes for the fabrication of electronic devices, but must be removed after processing. The removal method using hydrogen radicals, which are produced on a tungsten hot-wire catalyst, is effective to resolve some environmental and industrial problems in usual methods. However, the removal rate is not as good as that of the usual methods. We have previously described that the removal rate is enhanced just by decreasing Hydrogen pressure but the rate limitations not clarified. In present study, we examined the removal rate dependence on the pressure and revealed that the upper limitation of the enhancement is achieved at 0.50 Pa. The removal rate at 0.50 Pa was 8.3 times higher than that at 20 Pa when the surface temperature was 250 <sup>o</sup>C.

    DOI: 10.2494/photopolymer.30.297

    CiNii Article

  • Photoresist Removal Using H Radicals Generated by Iridium Hot-Wire Catalyst Reviewed

    Masashi Yamamoto, Shiro Nagaoka, Hironobu Umemoto, Keisuke Ohdaira, Takashi Nishiyama, Hideo Horibe

    International Journal of Polymer Science   2017   2017( ISSN:1687-9422

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    © 2017 Masashi Yamamoto et al. We examined an environmentally friendly photoresist removal method using H radicals produced by decomposing hydrogen on a hot iridium catalyst. We examined the relationship between photoresist removal rate and its surface temperature using thin film interference and the removal properties using H radicals produced by the Ir catalyst. Decomposition behavior at polymer surface by radicals may be analyzed in further detail from the aspect of kinetics. Additionally, we investigated the oxygen addition effects on the removal rate. The photoresist removal rate increased with the oxygen additive amount and then decreased more gradually than in the case of using W filament. The increasing behavior was similar but there was a large difference between W and Ir catalyst in the decreasing behavior.

    DOI: 10.1155/2017/2983042

  • Photocuring of Radically Polymerizable Hyperbranched Polymers Having Degradable Linkages

    Sato Eriko, Yamashita Yoji, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   30 ( 2 )   241 - 246   2017( ISSN:09149244

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    Hyperbranched polymers having a number of reductive disulfide bonds and radically reactive vinyl groups were synthesized by the bulk radical homopolymerization of bis(2-methacryloyloxyethyl)disulfide (disulfide based dimethacrylate, DSDMA) as a divinyl monomer in the presence of methyl 2-(bromomethyl)acrylate as an addition-fragmentation chain transfer agent. The resulting hyperbranched polymers (HB-DSDMAs) were photocured by irradiated at 365 nm in the presence of 2,2-dimethoxy-2-phenylacetophenone as a photo radical initiator. The photocured HB-DSDMA exhibited high transparency in the visible region and good solvent resistance for various organic solvents. Reduction of the disulfide groups smoothly proceeded in the presence of tributylphosphine as a reductant, and the cured HB-DSDMAs were completely solubilized. HB-DSDMAs were also photocured by irradiation at 254 nm due to the homolysis of the disulfide groups with subsequent initiation of the radical polymerization.

    DOI: 10.2494/photopolymer.30.241

    CiNii Article

  • Dissolution Promotion Effect of Addition of Low Molecular Compounds to Positive Tone Chemically Amplified Photoresist System

    Takamori Kazuma, Nishiyama Takashi, Sato Eriko, Horibe Hideo

    Journal of Photopolymer Science and Technology   30 ( 3 )   281 - 284   2017( ISSN:09149244

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    Three-component chemically amplified photoresists which are consisted of a base resin, a photo acid generator and a dissolution inhibitor are promising because the high sensitivity and the high resolution can be satisfied at the same time. We studied about the dissolution promotion effect of hydroquinone (HQ) in the exposed area. HQ is a model compound of the photo induced product of the dissolution inhibitor. We disclosed that HQ depressed a glass transition temperature (<i>T</i>g) of the base resin and the sensitivity was improved by enhancing the dissolution rate in the exposed area. It is expected that the dissolution rate was promoted when the post exposure bake temperature exceeded <i>T</i>g because the acid diffuse more easily.

    DOI: 10.2494/photopolymer.30.281

    CiNii Article

  • Degradation of Hydrophilic Polymers in Aqueous Solution by Using Ozone Microbubble

    Nishiyama Takashi, Matsuura Kohei, Sato Eriko, Kometani Noritsugu, Horibe Hideo

    Journal of Photopolymer Science and Technology   30 ( 3 )   285 - 289   2017( ISSN:09149244

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    Polyethylene glycol (PEG) in aqueous solution was decomposed by treating O<sub>3</sub> microbubbles and O<sub>3</sub> water. The molecular weight of PEG treated with O<sub>3</sub> microbubbles became lower, and the PEG degradation was enhanced in alkaline condition. PEG in aqueous solution was efficiently decomposed by reactive oxygen species generated by O<sub>3</sub> decomposition, and O<sub>3</sub> microbubbles promoted the O<sub>3</sub> decomposition in the interface of O<sub>3</sub> gas and surrounding water in which OH anion localized. PEG in aqueous solution was decomposed to inorganic oxygen by advanced oxidation process (AOP) of O<sub>3</sub> microbubbles and H<sub>2</sub>O<sub>2</sub>, and the reduction rate of total organic carbon (TOC) was over 70%.

    DOI: 10.2494/photopolymer.30.285

    CiNii Article

  • Coumarin-containing Polymers as Thermo- and Photo-responsive Polymers: Copolymerization with Solvophilic or Solvophobic Comonomers to Control Thermoresponsive Behavior

    Sato Eriko, Nakanishi Ryota, Nishiyama Takashi, Horibe Hideo

    Chemistry Letters   46 ( 1 )   108 - 110   2017( ISSN:03667022

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    <p>The lower critical solution temperature of thermo- and photo-responsive polymers, which involve coumarin units having functions for the dual-responsivity in chloroform, was controlled by the copolymerization. The cloud points of the copolymers of 7-methacryloyloxycoumarin with methacrylic acid and methyl methacrylate as solvophobic and solvophilic comonomers, respectively, were tuned below room temperature to nearly the boiling point of chloroform. The photodimerization of the coumarin units in the copolymer resulted in a decrease of the cloud points, i.e., photoresponsivity.</p>

    DOI: 10.1246/cl.160907

    CiNii Article

  • Analysis of Resist Removal Phenomenon Using Laser Irradiation

    Kamimura Tomosumi, Kuramae Hirouki, Yamashiro Takayuki, Nuno Kosuke, Umeda Yuji, Tsujimoto Singo, Nakamura Ryosuke, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   30 ( 3 )   291 - 295   2017( ISSN:09149244

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    Resist removal phenomenon with laser irradiation was analyzed by using a finite element (FE) method. Laser irradiation in the water can improve the resist removal effect as compared with that of normal atmosphere irradiation. A two-dimensional (2-D) micro-FE model was constructed based on the boundary surface between the Si wafer, resist and water during laser radiation. In the normal atmosphere, any effective stress did not occur along the x-axis direction in the resist. In contrast, for the laser irradiation in the water, large compressive stress was confirmed along the x-axis direction in the resist. This compressive stress in the resist is thought to improve the resist removal efficiency.

    DOI: 10.2494/photopolymer.30.291

    CiNii Article

  • 22 Chemical Structure of the Ion Beam Irradiated Polymer

    Horibe Hideo

    RADIOISOTOPES   66 ( 11 )   567 - 577   2017( ISSN:00338303

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    <p>We investigated the chemical structure of positive-tone novolak photoresists into which B, P, and As ions were implanted with doses of 5×10<sup>12</sup> to 5×10<sup>15</sup> atoms/cm<sup>2</sup>. The thickness of the surface-hardened layer of ion-implanted photoresists increased in the order As–P–B. The energy supplied from the ions to the photoresist concentrated on the surface side in the increasing order of B–P–As. The photoresists are exhibitting carbonization and/or cross-linkage attributable to the decrease in OH, CH, and O<sub>1s</sub> and the increase in C=C, C<sub>1s</sub>, and π-conjugated systems.</p>

    DOI: 10.3769/radioisotopes.66.567

    CiNii Article

  • 21 Material Design of the Chemically Amplified Positive Type Electron Beam Resist

    Horibe Hideo

    RADIOISOTOPES   66 ( 11 )   557 - 566   2017( ISSN:00338303

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    <p>The dissolution characteristics of a chemically amplified electron beam (EB) resist composed of partially <i>tert</i>-butoxycarbonyl group (<i>t</i>BOC) protected poly(<i>p</i>-vinylphenol)(PVP), a dissolution inhibitor, and an acid generator were investigated. The resist sensitivity was improved with decreasing <i>t</i>BOC ratio of the matrix resin. As the <i>t</i>BOC ratio increased, the resolution of the resist was better. SEM observation of the pattern profile was carried out to investigate the sensitivity and the resolution of the resist. The optimum <i>t</i>BOC ratio was 23.8%. As dissolution inhibitors, hydroquinone protected by a <i>tert</i>-butoxycarbonyl group(B-HQ) and isophthalic acid protected by a <i>tert</i>-butyl group(B-IP) are used. Dissolution inhibitors (B-HQ and B-IP) become dissolution promoters (HQ and IP) after exposure. The dissolution rate of the resist consisting of B-IP was faster than that of B-HQ in the exposed area. Pka of IP is smaller than that of HQ, and the acidity of IP is higher than that of HQ. Therefore IP enhances the solubility of the matrix resin in the alkaline developer. We evaluated the dependence of sensitivity of the resist upon acid generators. Triphenylsulfonium triflate, Diphenyliodonium triflate, Triphenylsulfonium antimonate, and Diphenyliodonium antimonate were used. When iodonium ion was used as cation, the sensitivity of the resist was better. When antimonate ion as anion was used, the sensitivity of the resist was better.</p>

    DOI: 10.3769/radioisotopes.66.557

    CiNii Article

  • Crystalline structure control of poly(vinylidene fluoride) films with the antisolvent addition method Reviewed

    Takashi Nishiyama, Takayuki Sumihara, Yasutaka Sasaki, Eriko Sato, Masafumi Yamato, Hideo Horibe

    Polymer Journal   48 ( 10 )   1035 - 1038   2016.10( ISSN:0032-3896

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    A simple method for preparing poly(vinylidene fluoride) (PVDF) films using antisolvent addition and controlling their crystalline structure was reported. PVDF was dissolved in HMPA, PC, GBL, DMAc, TEP and CHN at a concentration of 20 wt%. The dissolution process for each sample was 25-200°C for 1 day. These solutions were spin-coated on a three-inch Si wafer and the solution weight on the substrate was adjusted to 0.2?0.3 g using spincoating conditions. The samples were immersed in 500 ml of deionized water, which was used as the antisolvent for 3 min at 25°C. After immersion, the samples were removed from the deionized water and dried under atmospheric conditions. Crystalline structures of the PVDF films were evaluated by FT-IR and XRD. The weight of the PVDF film decreased with increasing evaporation time and was constant after 1 h. The slopes of the curves at the initial stage of evaporation were nearly identical, and the values of the HMPA, DMAc and TEP systems were 4.7, 4.4 and 5.7 mg min-1, respectively. The formation of porous structures presumably occurred via phase separation because of solvent exchange and diffusion of deionized water into the film. The findings indicate that the evaporation rates depended on the evaporation of deionized water diffused into the PVDF films.

    DOI: 10.1038/pj.2016.62

  • Crystalline structure control of poly(vinylidene fluoride) films with the antisolvent addition method Reviewed

    Nishiyama Takashi, Sumihara Takayuki, Sasaki Yasutaka, Sato Eriko, Yamato Masafumi, Horibe Hideo

    POLYMER JOURNAL   48 ( 10 )   1035 - 1038   2016.10( ISSN:0032-3896

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    DOI: 10.1038/pj.2016.62

  • Oxygen additive amount dependence of rate of photoresist removal by H radicals generated on a tungsten hot-wire catalyst Reviewed

    Yamamoto Masashi, Umemoto Hironobu, Ohdaira Keisuke, Shikama Tomokazu, Nishiyama Takashi, Horibe Hideo

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 7 )   2016.07( ISSN:0021-4922

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    DOI: 10.7567/JJAP.55.076503

  • Oxygen additive amount dependence of rate of photoresist removal by H radicals generated on a tungsten hot-wire catalyst Reviewed

    Masashi Yamamoto, Hironobu Umemoto, Keisuke Ohdaira, Tomokazu Shikama, Takashi Nishiyama, Hideo Horibe

    Japanese Journal of Applied Physics   55 ( 7 )   2016.07( ISSN:0021-4922

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    © 2016 The Japan Society of Applied Physics. We examined an environmentally friendly photoresist removal method using radicals produced by decomposing mixtures of hydrogen and oxygen on a hot tungsten catalyst. The photoresist removal rate increased with the oxygen additive amount (the flow rate ratio of oxygen to hydrogen) up to an optimal amount and then decreased gradually. When the catalyst temperature was 1600°C, the optimal oxygen additive amount was 1.0% and the removal rate was 1.7 times higher than that in the pure hydrogen system. At 2000°C, the optimal amount increased to 2.5% but the increase ratio decreased by 1.3 times. At high catalyst temperatures, the absolute removal rate as well as the optimal oxygen additive amount is high, but the increase ratio is low. At the optimal oxygen additive amount, H, O, and OH radicals may exert their effects together to decompose photosensitive polymers.

    DOI: 10.7567/JJAP.55.076503

  • Decomposition Process of PMMA-based Polymer Using Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst Reviewed

    Takagi Seiji, Nishiyama Takashi, Yamamoto Masashi, Sato Eriko, Kamimura Tomosumi, Ogata Toshiyuki, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   29 ( 4 )   629 - 631   2016( ISSN:0914-9244

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  • Removal Technology of Poly-Vinyl Phenol Using Laser Irradiation Reviewed

    Kamimura Tomosumi, Nuno Kosuke, Kuroki Yuta, Yamashiro Takayuki, Tsujimoto Singo, Nakamura Ryosuke, Takagi Seiji, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   29 ( 4 )   633 - 637   2016( ISSN:0914-9244

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  • Liquid marble containing degradable polyperoxides for adhesion force-changeable pressure-sensitive adhesives Reviewed

    Sato Eriko, Yuri Michihiro, Fujii Syuji, Nishiyama Takashi, Nakamura Yoshinobu, Horibe Hideo

    RSC ADVANCES   6 ( 61 )   56475 - 56481   2016( ISSN:2046-2069

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    DOI: 10.1039/c6ra10677c

  • Enhancement of Removal Uniformity by Oxygen Addition for Photoresist Removal Using H Radicals Generated on a Tungsten Hot-Wire Catalyst Reviewed

    Yamamoto Masashi, Maejima Kazuma, Umemoto Hironobu, Ohdaira Keisuke, Shikama Tomokazu, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   29 ( 4 )   639 - 642   2016( ISSN:0914-9244

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  • Effects of Oxygen Microbubbles on Photoresist Layers under Hot Water Conditions Reviewed

    Takahashi Masayoshi, Shirai Yasuyuki, Teramoto Akinobu, Takahashi Tunejirou, Tatera Katsumi, Matsuura Kouhei, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   29 ( 4 )   643 - 646   2016( ISSN:0914-9244

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  • Effect of Temperature on Degradation of Polymers for Photoresist Using Ozone Microbubbles Reviewed

    Matsuura Kohei, Nishiyama Takashi, Sato Eriko, Yamamoto Masashi, Kamimura Tomosumi, Takahashi Masayoshi, Koike Kunihiko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   29 ( 4 )   623 - 627   2016( ISSN:0914-9244

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  • Removal Technology of Poly-Vinyl Phenol Using Laser Irradiation

    Kamimura Tomosumi, Nuno Kosuke, Kuroki Yuta, Yamashiro Takayuki, Tsujimoto Singo, Nakamura Ryosuke, Takagi Seiji, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   29 ( 4 )   633 - 637   2016( ISSN:09149244

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    Removal by using laser irradiation was investigated in Poly-Vinyl Phenol (PVP). The laser irradiation in the water can improve the PVP stripping effect as compared with that of normal atmosphere irradiation. The surface laser damage threshold of Si wafer was 0.13 J/cm<sup>2</sup>, and the PVP stripping threshold was 0.06 J/cm<sup>2</sup>. The PVP stripping threshold decreased to approximately 50 % of the surface laser damage threshold. The PVP strips from the Si wafer just as shown in a positive-tone DNQ / novolak resist. However, removal efficiency decreased at a large irradiation beam diameter. The stripped area decreases at the beam diameter of 1.5mm or more. Irradiation with multiple laser beams with a small beam diameter could improve the PVP stripping rate with high efficiency.

    DOI: 10.2494/photopolymer.29.633

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  • Liquid marble containing degradable polyperoxides for adhesion force-changeable pressure-sensitive adhesives Reviewed

    Eriko Sato, Michihiro Yuri, Syuji Fujii, Takashi Nishiyama, Yoshinobu Nakamura, Hideo Horibe

    RSC Advances   6 ( 61 )   56475 - 56481   2016( ISSN:2046-2069

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    © The Royal Society of Chemistry 2015. Liquid marbles containing a sticky polyperoxide were prepared by the in situ copolymerization of the 1,3-diene monomer with oxygen. The as-prepared liquid marbles had a non-sticky nature and could move on any substrates due to the presence of hard particles on their surfaces, while the squeezed liquid marble developed adhesion force-tunable PSA properties due to the outflow of the inner materials. The 180° peel strength of the squeezed liquid marble increased by heating at 90 °C for 1 h or by UV irradiation at 0.86 J cm-2 because the cohesive force of the adhesive layer increased by the additional polymerization initiated by moderate decomposition of the polyperoxide. The increased 180° peel strengths were significantly decreased again to almost zero, i.e.; dismantling, after an additional heating at 150 °C for 1 h because of an excess increase in the cohesive force as pressure-sensitive adhesives, where cross-linking took place as a result of significant decomposition of the polyperoxide accompanied by hydrogen abstraction and coupling.

    DOI: 10.1039/c6ra10677c

  • Enhancement of Removal Uniformity by Oxygen Addition for Photoresist Removal Using H Radicals Generated on a Tungsten Hot-Wire Catalyst

    Yamamoto Masashi, Maejima Kazuma, Umemoto Hironobu, Ohdaira Keisuke, Shikama Tomokazu, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   29 ( 4 )   639 - 642   2016( ISSN:09149244

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    We examined an environmentally friendly photoresist removal method using radicals produced by decomposing a mixture of hydrogen and oxygen on hot tungsten catalysts. Results show that the photoresist removal uniformity is enhanced remarkably with the optimal amount of oxygen addition. By further optimizing conditions, the removal uniformity and the inclusive removal rate might become comparable to those achieved when chemicals are used.

    DOI: 10.2494/photopolymer.29.639

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  • Effects of Oxygen Microbubbles on Photoresist Layers under Hot Water Conditions

    Takahashi Masayoshi, Shirai Yasuyuki, Teramoto Akinobu, Takahashi Tunejirou, Tatera Katsumi, Matsuura Kouhei, Horibe Hideo

    Journal of Photopolymer Science and Technology   29 ( 4 )   643 - 646   2016( ISSN:09149244

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    We need to enhance the removing ability of microbubbles through the clear understanding of the functional mechanisms of microbubbles for the removal of photoresist layers. The purpose of the present study is to clarify the effect of microbubble on the surface of photoresist layers.

    DOI: 10.2494/photopolymer.29.643

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  • Effect of Temperature on Degradation of Polymers for Photoresist Using Ozone Microbubbles

    Matsuura Kohei, Nishiyama Takashi, Sato Eriko, Yamamoto Masashi, Kamimura Tomosumi, Takahashi Masayoshi, Koike Kunihiko, Horibe Hideo

    Journal of Photopolymer Science and Technology   29 ( 4 )   623 - 627   2016( ISSN:09149244

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    We studied about an effect of temperature on degradation of polymers for photoresist using ozone microbubbles as an environmentally friendly cleaning technique. The dissolved ozone concentration of ozone microbubbles was decreased with the increasing temperature because the solubility of ozone gas was decreased and self-decomposition of ozone in water was promoted. While, the reactivity between ozone and novolak resin was increased with the increasing temperature. Consequently, novolak resin was most efficiently removed at around 23 <sup>o</sup>C. The activated energy for removal of novolak resin using ozone microbubbles was 23 kJ/mol determined from Arrhenius plots. Polyvinyl phenol was removed by ozone microbubbles, and its removal rate was comparable with that of novolak resin. Polymethyl methacrylate without C=C bond or benzene ring structure could not be removed by ozone microbubbles.

    DOI: 10.2494/photopolymer.29.623

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  • Decomposition Process of PMMA-based Polymer Using Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst

    Takagi Seiji, Nishiyama Takashi, Yamamoto Masashi, Sato Eriko, Kamimura Tomosumi, Ogata Toshiyuki, Horibe Hideo

    Journal of Photopolymer Science and Technology   29 ( 4 )   629 - 631   2016( ISSN:09149244

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    We investigated the formation of microstructure on the surface of Poly(methyl methacrylate) - based polymer (PMMA - based polymer), which is a polymer for the ArF photoresist, in decomposition process by using atomic hydrogen generated by a tungsten hot-wire catalyst.

    DOI: 10.2494/photopolymer.29.629

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  • Liquid marbles as a micro-reactor for efficient radical alternating copolymerization of diene monomer and oxygen Reviewed

    Sato E., Yuri M., Fujii S., Nishiyama T., Nakamura Y., Horibe H.

    CHEMICAL COMMUNICATIONS   51 ( 97 )   17241 - 17244   2015.12( ISSN:1359-7345

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    DOI: 10.1039/c5cc07421e

  • Dual stimuli-responsive homopolymers: Thermo- and photo-responsive properties of coumarin-containing polymers in organic solvents Reviewed

    Sato Eriko, Masuda Yuki, Kadota Joji, Nishiyama Takashi, Horibe Hideo

    EUROPEAN POLYMER JOURNAL   69   605 - 615   2015.08( ISSN:0014-3057

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    DOI: 10.1016/j.eurpolymj.2015.05.010

  • Dual stimuli-responsive homopolymers: Thermo- and photo-responsive properties of coumarin-containing polymers in organic solvents Reviewed

    Eriko Sato, Yuki Masuda, Joji Kadota, Takashi Nishiyama, Hideo Horibe

    European Polymer Journal   69   605 - 615   2015.07( ISSN:0014-3057

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    © 2015 Elsevier Ltd. Abstract Thermoresponsive properties of poly(7-methacryloyloxycoumarin) (P1a) and its derivatives as homopolymers containing a photoreactive coumarin unit were systematically investigated. P1a showed a lower critical solution temperature (LCST)-type phase separation in dichloromethane, chloroform, and 1,1,2-trichloroethane. The temperature producing a 50% transmittance (Tc) of 0.1 wt% P1a in distilled chloroform was 26 °C, while the Tc value decreased to 21 °C in deuterated chloroform i.e., the deuterium isotope effect. The Tc values in chloroform were adjustable from 28 to 57 °C by the introduction of the ethyleneoxy spacer and the substitution of α-methyl group by hydrogen. While the polymers containing 4-substituted coumarins were soluble in chloroform and dichloromethane from 0 °C to their boiling points. In the distilled chloroform solution, the coumarin units in P1a underwent a [2 + 2] cycloaddition and the transmittance at 500 nm decreased from 98% to 29% at 25 °C by a 180-s photoirradiation (326 mJ/cm2, emission band at 365 nm).

    DOI: 10.1016/j.eurpolymj.2015.05.010

  • Acetal-protected acrylic copolymers for dismantlable adhesives with spontaneous and complete removability Reviewed

    Sato Eriko, Yamanishi Keisuke, Inui Tadashi, Horibe Hideo, Matsumoto Akikazu

    POLYMER   64   260 - 267   2015.05( ISSN:0032-3861

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    DOI: 10.1016/j.polymer.2015.01.057

  • Acetal-protected acrylic copolymers for dismantlable adhesives with spontaneous and complete removability Reviewed

    Eriko Sato, Keisuke Yamanishi, Tadashi Inui, Hideo Horibe, Akikazu Matsumoto

    Polymer   64   260 - 267   2015.05( ISSN:0032-3861

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    © 2015 Elsevier Ltd. Acetal-protected acrylic copolymers consisting of 1-isobutoxyethyl acrylate (iBEA), 2-ethylhexyl acrylate (2EHA), and 2-hydroxyethyl acrylate (HEA) repeating units were applied to the pressure-sensitive adhesive (PSA) types of dismantlable adhesives. The random and block copolymers with a relatively high HEA content showed good PSA properties before dismantling treatment. The deprotection of the acetal-protected group of the iBEA unit took place in response to individual external stimuli, soaking in boiling water and UV irradiation in the presence of a photoacid generator. The random copolymers containing an HEA unit of more than 10 mol% and an iBEA unit of more than 70 mol% achieved spontaneous debonding with interfacial failures at both the stainless steel and polyethylene terephthalate support film sides by soaking in boiling water within 10 min, whereas the corresponding block copolymer did not achieve interfacial failure even after a 20-min soaking. Photoirradiation of the random copolymers containing N-hydroxynaphthalimide triflate as a photoacid generator resulted in interfacial failures at both sides with a sufficiently reduced peel strength, where cross-linking arose due to the transacetalization and transesterification of a hydroxy group in the HEA unit along with deprotection.

    DOI: 10.1016/j.polymer.2015.01.057

  • Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer Reviewed

    Kono Akihiko, Arai Yu, Goto Yousuke, Yamamoto Masashi, Takahashi Seiji, Yamagishi Tadaaki, Ishikawa Kenji, Hori Masaru, Horibe Hideo

    THIN SOLID FILMS   575   17 - 20   2015.01( ISSN:0040-6090

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    DOI: 10.1016/j.tsf.2014.10.020

  • Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals Reviewed

    Arai Yu, Noto Yusuke, Goto Yousuke, Takahashi Seiji, Yamamoto Masashi, Nishiyama Takashi, Kono Akihiko, Ishijima Tatsuo, Ishikawa Kenji, Hori Masaru, Horibe Hideo

    THIN SOLID FILMS   575   12 - 16   2015.01( ISSN:0040-6090

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    DOI: 10.1016/j.tsf.2014.10.021

  • Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer Reviewed

    Akihiko Kono, Yu Arai, Yousuke Goto, Masashi Yamamoto, Seiji Takahashi, Tadaaki Yamagishi, Kenji Ishikawa, Masaru Hori, Hideo Horibe

    Thin Solid Films   575   17 - 20   2015.01( ISSN:0040-6090

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    © 2014 Elsevier B.V. All rights reserved. This paper discusses the decomposition processes of polymer thin films coated on silicon (Si) substrates by hydrogen radicals generated from H2 on hot-wire catalyst surfaces. N2 buffer was used to relax the translational motion of hydrogen radicals. It is shown that H atoms react to polymer films under thermal equilibrium conditions when the total pressure is 21.3 Pa and the distance between the catalyst and the substrate is 100 mm. Polymers with benzene ring such as phenol resin, polystyrene, poly(vinylphenol), and poly(α-methylstyrene) exhibited both low removal rate and high activation energy of decomposition compared to those polymers without benzene ring such as poly(methylmethacrylate) and poly(isobutylene). We concluded that benzene ring with CC bond and resonance structure is resistant to decomposition by hydrogen radicals.

    DOI: 10.1016/j.tsf.2014.10.020

  • Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals Reviewed

    Yu Arai, Yusuke Noto, Yousuke Goto, Seiji Takahashi, Masashi Yamamoto, Takashi Nishiyama, Akihiko Kono, Tatsuo Ishijima, Kenji Ishikawa, Masaru Hori, Hideo Horibe

    Thin Solid Films   575   12 - 16   2015.01( ISSN:0040-6090

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    © 2014 Elsevier B.V. All rights reserved. The relationship between the chemical structure of PMMA-type polymers and the removal rate by hydrogen radicals was examined. Hydrogen radicals are known to have superior reduction ability and can be generated by decomposing H2 on hot-wire surfaces. PMMA-type polymers, which are widely used as base polymers for ArF resist, have many variations with the difference in the substituents. The removal rate of the main chain scission type polymers was faster than that of the main chain cross-linking type polymers. In the main chain cross-linking type polymers, it is considered that reduction decomposition of polymer was inhibited apparently according to occurrence to simultaneously reduce decomposition by hydrogen radicals and main chain cross-link. The removal rate was slow in the case of the main chain scission type polymers with a benzene ring. We guessed that the polymer with a benzene ring was a stable structure by resonance stabilization of a benzene ring. We found that the removal rate was slow according to increasing bulkiness of α-side chain in the main chain scission type polymers. It is considered that etching resistance increases with increasing bulkiness of α-side chain of polymer.

    DOI: 10.1016/j.tsf.2014.10.021

  • Degradation of Polymers for Resist using Microbubbles on Ozonized Water

    K. Matsuura, T. Nishiyama, E. Sato, M. Yamamoto, M. Takahashi, K. Koike and H. Horibe

    J. Photopolym. Sci. Tech.   28 ( 2 )   299 - 301   2015

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  • Liquid Marbles as a Micro-reactor for Efficient Radical Alternating Copolymerization of Diene Monomer and Oxygen Reviewed

    E. Sato, M. Yuri, S. Fujii, T. Nishiyama, Y. Nakamura, H. Horibe

    Chem. Commun.   51   17241 - 1725   2015

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  • Development of Resis Removal Technology using Laser Irradiation Reviewed

    T. Kamimura, Y. Kuroki, K. Kawasaki, T. Murakami, Y. Harada, H. Kuramae, T. Nishiyama, H. Horibe

    J. Photopolym. Sci. Tech.   28 ( 2 )   307 - 311   2015

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  • Enhancement of Photoresist Removal Rate by Using Atomic Hydrogen Generated under Low-pressure Conditions Reviewed

    Yamamoto Masashi, Umemoto Hironobu, Ohdaira Keisuke, Nagaoka Shiro, Shikama Tomokazu, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   28 ( 2 )   303 - 306   2015( ISSN:0914-9244

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  • Effect of Microbubbles on Ozonized Water for Photoresist Removal Reviewed

    Takahashi Masayoshi, Horibe Hideo, Matsuura Kouhei, Tatera Katsumi

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   28 ( 2 )   293 - 298   2015( ISSN:0914-9244

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  • Development of Environmental Harmony Resist Removal System using Cryogenic Particulate Spray Reviewed

    Ishimoto Jun, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   28 ( 2 )   285 - 288   2015( ISSN:0914-9244

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  • Dependence on Resist Stripping Efficiency to Irradiating Beam Size in Advanced Laser Resist Stripping Method Reviewed

    Kamimura Tomosumi, Kuroki Yuta, Murakami Takuma, Nuno Kosuke, Masaya Akimoto, Harada Yoshiyuki, Nishiyama Takashi, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   28 ( 2 )   307 - 311   2015( ISSN:0914-9244

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  • Degradation of Polymers for Resist Using Microbubbles on Ozonized Water Reviewed

    Matsuura Kohei, Nishiyama Takashi, Sato Eriko, Yamamoto Masashi, Takahashi Masayoshi, Koike Kunihiko, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   28 ( 2 )   299 - 301   2015( ISSN:0914-9244

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  • <b>Analysis of Initiation Mechanism for Thermal Curing of Multifunctional </b><b>Hyperbranched Polymers by Radical Trapping </b> Reviewed

    Sato Eriko, Uehara Izumi, Nishiyama Takashi, Horibe Hideo

    Japan Thermosetting Plastics Industry Association, Journal of Network Polymer,Japan   36 ( 4 )   186 - 191   2015( ISSN:1342-0577

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    We have reported that multifunctional hyperbranched polymers are synthesized by radical homopolymerization of ethylene glycol dimethacrylate in the presence of methyl (2-bromomethyl)acrylate as an addition-fragmentation chain transfer agent. The hyperbranched polymers contain the pendant vinyl groups and the ω-end vinyl groups, and exhibit thermosetting properties in the absence of any catalyst. In this study, the initiation mechanisms for the thermal curing of the hyperbranched polymer were investigated by radical trapping using a nitroxide free radical. The hyperbranched polymer reacted with 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxy benzoate by heating at 150 °C showing that the curing proceeded by radical mechanism. The <sup>1</sup>H NMR analysis of the product revealed that the cleavage of Br-CH<sub>2</sub> bond and C -C bond adjacent to a vinyl group having relatively low bond dissociation energies has minor contribution to the radical formation and thermal curing proceeds by spontaneous polymerization of vinyl groups.

    DOI: 10.11364/networkpolymer.36.186

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  • Development of Resis Removal Technology using Laser Irradiation

    T. Kamimura, Y. Kuroki, K. Kawasaki, T. Murakami, Y. Harada, H. Kuramae, T. Nishiyama and H. Horibe

    J. Photopolym. Sci. Tech.   28 ( 2 )   307 - 311   2015

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  • Enhancement of Photoresist Removal Rate Atomic Hydrogen Generated under Low-pressure Conditions

    M. Yamamoto, H. Umemoto, K. Okadaira, S. Nagaoka, T. Shikama, T. Nishiyama and H. Horibe

    J. Photopolym. Sci. Tech.   28 ( 2 )   303 - 306   2015

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  • Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals

    Y. Arai, H. Horibe et al.

    Thin Solid Films   575   12 - 16   2015

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  • Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer

    A. Kono, Y. Arai, Y. Goto, M. Yamamoto, S. Takahashi, T. Yamagishi, K. Ishikawa, M. Hori, H. Horibe

    Thin Solid Films   575   575   2015

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  • Acetal-Protected Acrylic Copolymers for Dismantlable Adhesives with Spontaneous and Complete Removability

    E. Sato, K. Yamanishi, T. Inui, H. Horibe, A. Matsumoto

    Polymer   64   260 - 267   2015

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  • Dual Stimuli-repsonsive Homopolymers: Thermo- and Photo-responsive Properties of Coumarin-containing Polymers in Organic Solvents

    E. Sato, Y. Masuda, J. Kadota, T. Nishiyama, H. Horibe

    Eur. Polym. J.   69   605 - 615   2015

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  • Liquid Marbles as a Micro-reactor for Efficient Radical Alternating Copolymerization of Diene Monomer and Oxygen

    E. Sato, M. Yuri, S. Fujii, T. Nishiyama, Y. Nakamura, and H. Horibe

    Chem. Commun.   51   17241 - 1725   2015

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  • Liquid marbles as a micro-reactor for efficient radical alternating copolymerization of diene monomer and oxygen Reviewed

    E. Sato, M. Yuri, S. Fujii, T. Nishiyama, Y. Nakamura, H. Horibe

    Chemical Communications   51 ( 97 )   17241 - 17244   2015( ISSN:1359-7345

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    © The Royal Society of Chemistry 2015. Liquid marbles have been shown to be a novel micro-reactor to synthesize polyperoxides by the radical alternating copolymerization of the 1,3-diene monomer with oxygen in a good yield. Oxygen gas is effectively absorbed as a comonomer by the large and permeable gas-liquid interface of the liquid marbles.

    DOI: 10.1039/c5cc07421e

  • Enhancement of Photoresist Removal Rate by Using Atomic Hydrogen Generated under Low-pressure Conditions

    Yamamoto Masashi, Umemoto Hironobu, Ohdaira Keisuke, Nagaoka Shiro, Shikama Tomokazu, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   28 ( 2 )   303 - 306   2015( ISSN:09149244

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    Instead of photoresist removal methods using chemicals, we investigated a novel, environmentally friendly removal method using atomic hydrogen generated on a tungsten hot-wire catalyst. We revealed that the photoresist removal rate is remarkably enhanced under low hydrogen pressure conditions. This enhancement may be ascribed to the high kinetic energy of H atoms. If we optimize the removal conditions, the removal rate may become comparable to that achieved when chemicals are used.

    DOI: 10.2494/photopolymer.28.303

    CiNii Article

  • Effect of Microbubbles on Ozonized Water for Photoresist Removal

    Takahashi Masayoshi, Horibe Hideo, Matsuura Kouhei, Tatera Katsumi

    Journal of Photopolymer Science and Technology   28 ( 2 )   293 - 298   2015( ISSN:09149244

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    The existence of microbubbles in ozonized water has been shown to significantly enhance the photoresist removal rate due to an elevated dissolved ozone concentration and a direct effect of the microbubbles relating to the radical generation. Additionally, the ozone microbubble solution was able to effectively remove a high-dose ion-implanted photoresist, which is extremely resistant to removal by ozonized water and other wet chemicals because of its amorphous carbon-like layer, or “crust”. Electron spin resonance experiments were also performed without the influence of serious metal contamination and indicated the presence of hydroxyl radicals, which are thought to be formed by interaction of ozone with hydroxide ions adsorbed at the gas-water interface upon collapse of the microbubbles.

    DOI: 10.2494/photopolymer.28.293

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  • Development of Resis Removal Technology using Laser Irradiation

    T. Kamimura, Y. Kuroki, K. Kawasaki, T. Murakami, Y. Harada, H. Kuramae, T. Nishiyama, H. Horibe

    J. Photopolym. Sci. Tech.   28 ( 2 )   307 - 311   2015

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  • Development of Environmental Harmony Resist Removal System using Cryogenic Particulate Spray

    Ishimoto Jun, Horibe Hideo

    Journal of Photopolymer Science and Technology   28 ( 2 )   285 - 288   2015( ISSN:09149244

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    It is numerically found that the atomization of LN<sub>2</sub> droplet is induced by shear flow between LN<sub>2</sub> and gaseous nitrogen (GN<sub>2</sub>) flow. Sequentially, liquid to solid phase change is enhanced and solid nitrogen (SN<sub>2</sub>) particle is continuously created by LN<sub>2</sub> droplet freezing. By using ToF-SIMS and XPS analysis for resist removal experiment, the obtained C film thickness of resist removal section is 0.2 nm. Therefore, the photo resist can be successfully removed by using cryogenic solid particulate spray method.

    DOI: 10.2494/photopolymer.28.285

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  • Dependence on Resist Stripping Efficiency to Irradiating Beam Size in Advanced Laser Resist Stripping Method

    Kamimura Tomosumi, Kuroki Yuta, Murakami Takuma, Nuno Kosuke, Akimoto Masaya, Harada Yoshiyuki, Nishiyama Takashi, Horibe Hideo

    Journal of Photopolymer Science and Technology   28 ( 2 )   307 - 311   2015( ISSN:09149244

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    Dependence on the stripping efficiency to irradiating beam size was investigated in an advanced laser resist stripping method. The beam size on the resist surface was changed from 0.3 mm to 3.0 mm. An intensity shape of the laser beam was Gaussian shape. At a beam diameter of 0.3mm, the stripped resist area in a beam was 15 % of 0.01 mm<sup>2</sup>. In the case of beam diameter of 3.0 mm, the stripped resist area in a beam was 5 % of 0.38 mm<sup>2</sup>. The stripped area improves 38 times for scale-up of the beam area of 100 times. The resist stripping efficiency was thought to depend on the heat stress due to a temperature gradient between the beam center and the regions without laser irradiation. Irradiation with multiple laser beams by small beam diameter was confirmed as one of the methods for improvement of a resist stripping rate with high efficiency.

    DOI: 10.2494/photopolymer.28.307

    CiNii Article

  • Degradation of Polymers for Resist Using Microbubbles on Ozonized Water

    Matsuura Kohei, Nishiyama Takashi, Sato Eriko, Yamamoto Masashi, Takahashi Masayoshi, Koike Kunihiko, Horibe Hideo

    Journal of Photopolymer Science and Technology   28 ( 2 )   299 - 301   2015( ISSN:09149244

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    A significant effect of microbubbles on degradation of novolak resin could not be confirmed. Microbubbles efficiently dissolved ozone in solution, enhancing dissolved ozone concentration. By using ozone microbubbles, removal rate of novolak resin was enhanced. We expect that the effect of polymer degradation by microbubbles would be made more obvious by setting suitable conditions such as pH, ionic strength, and removal process.

    DOI: 10.2494/photopolymer.28.299

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  • <b>Analysis of Initiation Mechanism for Thermal Curing of Multifunctional </b><b>Hyperbranched Polymers by Radical Trapping </b>

    Sato Eriko, Uehara Izumi, Nishiyama Takashi, Horibe Hideo

    Journal of Network Polymer,Japan   36 ( 4 )   186 - 191   2015( ISSN:13420577

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    We have reported that multifunctional hyperbranched polymers are synthesized by radical homopolymerization of ethylene glycol dimethacrylate in the presence of methyl (2-bromomethyl)acrylate as an addition-fragmentation chain transfer agent. The hyperbranched polymers contain the pendant vinyl groups and the ω-end vinyl groups, and exhibit thermosetting properties in the absence of any catalyst. In this study, the initiation mechanisms for the thermal curing of the hyperbranched polymer were investigated by radical trapping using a nitroxide free radical. The hyperbranched polymer reacted with 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxy benzoate by heating at 150 °C showing that the curing proceeded by radical mechanism. The <sup>1</sup>H NMR analysis of the product revealed that the cleavage of Br-CH<sub>2</sub> bond and C -C bond adjacent to a vinyl group having relatively low bond dissociation energies has minor contribution to the radical formation and thermal curing proceeds by spontaneous polymerization of vinyl groups.

    DOI: 10.11364/networkpolymer.36.186

    CiNii Article

  • The effect of the structural order of isotactic polypropylene containing magnetically aligned nickel particles on its electrical resistivity Reviewed

    Yamato Masafumi, Obayashi Shuhei, Nishiyama Takashi, Horibe Hideo, Takahashi Kohki, Watanabe Kazuo

    POLYMER   55 ( 25 )   6546 - 6551   2014.12( ISSN:0032-3861

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    DOI: 10.1016/j.polymer.2014.10.031

  • The effect of the structural order of isotactic polypropylene containing magnetically aligned nickel particles on its electrical resistivity Reviewed

    Masafumi Yamato, Shuhei Obayashi, Takashi Nishiyama, Hideo Horibe, Kohki Takahashi, Kazuo Watanabe

    Polymer   55 ( 25 )   6546 - 6551   2014.12( ISSN:0032-3861

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    © 2014 Elsevier Ltd. All rights reserved. The effect of the high order structure of an isotactic polypropylene (PP) composite on the resistivity of composites containing magnetically aligned Ni particles was studied. Only a small amount of particles needed to be added for the composite material to become conducting after heating while in a magnetic field. The Ni columns formed on applying the field were distorted by the formation of large PP spherulites. Changes to the crystallization process due to the addition of a nucleating agent gave rise to changes in the columnar structure, resulting in large changes in the resistivity of the composite material. Controlling the high order structure of the polymer matrix including its morphology is very important in order to be able to control the magnetically aligned Ni structure.

    DOI: 10.1016/j.polymer.2014.10.031

  • High removal rate of cross-linked SU-8 resist using hydrogen radicals generated by tungsten hot-wire catalyzer Reviewed

    Kono Akihiko, Arai Yu, Maruoka Takeshi, Yamamoto Masashi, Goto Yousuke, Takahashi Seiji, Nishiyama Takashi, Horibe Hideo

    THIN SOLID FILMS   562   632 - 637   2014.07( ISSN:0040-6090

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    DOI: 10.1016/j.tsf.2014.04.062

  • High removal rate of cross-linked SU-8 resist using hydrogen radicals generated by tungsten hot-wire catalyzer Reviewed

    Akihiko Kono, Yu Arai, Takeshi Maruoka, Masashi Yamamoto, Yousuke Goto, Seiji Takahashi, Takashi Nishiyama, Hideo Horibe

    Thin Solid Films   562   632 - 637   2014.07( ISSN:0040-6090

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    This paper discusses the removal of chemically amplified negative-tone i-line resist SU-8 using hydrogen radicals generated by the catalytic decomposition of H2 molecules in H2/N2 mixed gas (H2:N2 = 10:90 vol.%) using a tungsten hot-wire catalyzer. SU-8 resists with exposure doses from 7 to 280 mJ/cm2 were removed by hydrogen radicals, although the SU-8 removal rate was independent of the exposure dose. The SU-8 removal rate increased with both substrate and catalyzer temperature, in addition to a decrease in the distance between the catalyzer and substrate. A high removal rate for cross-linked SU-8 with an exposure dose of 14 mJ/cm2 of approximately 4 μm/min was achieved with a catalyzer to substrate distance of 20 mm, and catalyzer and initial substrate temperatures of 2400 and 165 °C, respectively. © 2014 Elsevier B.V.

    DOI: 10.1016/j.tsf.2014.04.062

  • Sensitivity of a chemically amplified three-component resist containing a dissolution inhibitor for extreme ultraviolet lithography Reviewed

    Horibe Hideo, Ishiguro Keita, Nishiyama Takashi, Kono Akihiko, Enomoto Kazuyuki, Yamamoto Hiroki, Endo Masayuki, Tagawa Seiichi

    POLYMER JOURNAL   46 ( 4 )   234 - 238   2014.04( ISSN:0032-3896

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    DOI: 10.1038/pj.2013.95

  • Sensitivity of a chemically amplified three-component resist containing a dissolution inhibitor for extreme ultraviolet lithography Reviewed

    Hideo Horibe, Keita Ishiguro, Takashi Nishiyama, Akihiko Kono, Kazuyuki Enomoto, Hiroki Yamamoto, Masayuki Endo, Seiichi Tagawa

    Polymer Journal   46 ( 4 )   234 - 238   2014.04( ISSN:0032-3896

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    A chemically amplified three-component resist was prepared by adding a dissolution inhibitor as the third component in an X-ray resist, and its sensitivity and resolution were evaluated for the application in extreme ultraviolet (EUV) lithography. The chemically amplified three-component resist, which consists of a base resin, a photo-acid generator (PAG) and a dissolution inhibitor, achieved high sensitivity with an exposure dose below 10 mJ cm -2. Furthermore, the chemically amplified three-component resist exhibited higher resolution and sensitivity than a resist without a dissolution inhibitor. The dissolution inhibitor was converted to a dissolution promoter containing carboxylic groups by exposure to EUV light, and it acted as a plasticizer in the resist, resulting in facile diffusion of the protons generated from the PAG. Thus, novel EUV resists with high sensitivity and resolution could be designed utilizing chemically amplified three-component resist containing a dissolution inhibitor. © 2014 The Society of Polymer Science, Japan (SPSJ) All rights reserved 0032-3896/14.

    DOI: 10.1038/pj.2013.95

  • One-Step Synthesis of Thermally Curable Hyperbranched Polymers by Addition-Fragmentation Chain Transfer Using Divinyl Monomers

    E. Sato, I. Uehara, H. Horibe, A. Matsumoto

    Macromolecules   47 ( 3 )   937 - 943   2014.03

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  • One-Step Synthesis of Thermally Curable Hyperbranched Polymers by Addition-Fragmentation Chain Transfer Using Divinyl Monomers Reviewed

    Sato Eriko, Uehara Izumi, Horibe Hideo, Matsumoto Akikazu

    MACROMOLECULES   47 ( 3 )   937 - 943   2014.02( ISSN:0024-9297

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    DOI: 10.1021/ma402300z

  • One-step synthesis of thermally curable hyperbranched polymers by addition-fragmentation chain transfer using divinyl monomers Reviewed

    Eriko Sato, Izumi Uehara, Hideo Horibe, Akikazu Matsumoto

    Macromolecules   47 ( 3 )   937 - 943   2014.02( ISSN:0024-9297

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    Free radical bulk and solution polymerizations of a divinyl monomer, ethylene glycol dimethacrylate (EGDMA), in the presence of methyl 2-(bromomethyl)acrylate as an addition-fragmentation chain transfer agent were investigated to synthesize thermally curable hyperbranched polymers by a one-step reaction. Soluble polymers were obtained up to high conversion of EGDMA, and the molecular weight and molecular weight distribution of the polymers increased with increasing EGDMA conversion. 1H NMR and MALDI-MS analyses revealed that the soluble polymers were obtained after the consumption of a considerable amount of the pendant methacryloyl groups, and one polymer chain contained a number of end groups indicating the formation of hyperbranched polymers. The isolated hyperbranched polymers underwent thermal curing above 110 C without curing agents, and the polymers having a large number of pendant methacryloyl groups resulted in a significant increase in glass transition temperature, i.e., from around room temperature to above 210 C. © 2014 American Chemical Society.

    DOI: 10.1021/ma402300z

  • Quantification of Solvent Evaporation Rate on Time of Producing Three Type PVDF Crystalline Structures by Solvent Casting Method

    H. Horibe, Y. Sasaki, H. Oshiro, Y. Hosokawa, A. Kono, S. Takahashi, T. Nishiyama,

    Polymer J.   46 ( 2 )   104 - 110   2014.02

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  • Reaction mechanism of polymer removal using wet ozone Reviewed

    Goto Yousuke, Angata Yukihiro, Tsukazaki Emi, Takahashi Seiji, Koike Kunihiko, Yamagishi Tadaaki, Horibe Hideo

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 2 )   2014.02( ISSN:0021-4922

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    DOI: 10.7567/JJAP.53.02BB04

  • Quantification of the solvent evaporation rate during the production of three PVDF crystalline structure types by solvent casting Reviewed

    Horibe Hideo, Sasaki Yasutaka, Oshiro Hironori, Hosokawa Yukari, Kono Akihiko, Takahashi Seiji, Nishiyama Takashi

    POLYMER JOURNAL   46 ( 2 )   104 - 110   2014.02( ISSN:0032-3896

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    DOI: 10.1038/pj.2013.75

  • Quantification of the solvent evaporation rate during the production of three PVDF crystalline structure types by solvent casting Reviewed

    Hideo Horibe, Yasutaka Sasaki, Hironori Oshiro, Yukari Hosokawa, Akihiko Kono, Seiji Takahashi, Takashi Nishiyama

    Polymer Journal   46 ( 2 )   104 - 110   2014.02( ISSN:0032-3896

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    In this study, we quantified the solvent evaporation rate in the production of three poly(vinylidene fluoride) (PVDF) crystalline structures using the solvent casting method, the first known report on such quantification. The evaporation conditions of drying temperature and pressure for the solvent species during solvent casting were varied. The results indicated that the crystalline structures of forms I, II and III of PVDF were obtained when the solvent evaporation rates were <0.0001, >0.2 and between 0.03 and 0.00058 g min -1, respectively. From the above quantitative analysis, it was established that the crystalline structure of PVDF from solvent casting is predominantly determined by the solvent evaporation rate. © 2014 The Society of Polymer Science, Japan (SPSJ) All rights reserved.

    DOI: 10.1038/pj.2013.75

  • Scanning removal of ion-implanted novolak resist by using a laser irradiation Reviewed

    Kamimura Tomosumi, Kuroki Yuta, Kiriyama Takuya, Muraoka Hiroki, Nishiyama Takashi, Harada Yoshiyuki, Kuramae Hiroyuki, Horibe Hideo

    PACIFIC RIM LASER DAMAGE 2014: OPTICAL MATERIALS FOR HIGH POWER LASERS   9238   2014( ISSN:0277-786X

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    DOI: 10.1117/12.2073477

  • Scanning Removal of Ion-implanted Novolak Resist by using a Laser Irradiation Reviewed

    Kamimura Tomosumi, Kuroki Yuta, Kiriyama Takuya, Muraoka Hiroki, Nishiyama Takashi, Harada Yoshiyuki, Kuramae Hiroyuki, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   27 ( 2 )   237 - 241   2014( ISSN:0914-9244

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  • Dismantling Behavior of Pressure Sensitive Adhesives Using Acrylic Block and Random Copolymers in Response to Photoirradiation and Postbaking Reviewed

    Sato Eriko, Taniguchi Kentaro, Inui Tadashi, Yamanishi Keisuke, Horibe Hideo, Matsumoto Akikazu

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   27 ( 4 )   531 - 534   2014( ISSN:0914-9244

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  • Sensitivity of a chemically amplified three-component resist containing a dissolution inhibitor for extreme ultraviolet lithography

    H. Horibe, K. Ishiguro, T. Nishiyama, A. Kono, K. Enomoto, H. Yamamoto, M. Endo, and S. Tagawa

    Polymer Journal   46   234 - 238   2014

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  • Reaction mechanism of polymer removal using wet ozone

    Y. Goto, Y. Angata, E. Tsukazaki, S. Takahashi, K. Koike, T. Yamagishi, and H. Horibe

    53   02BB04   2014

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  • High removal rate of cross-linked SU-8 resist using hydrogen radicals generated by tungsten hot-wire catalyzer

    Akihiko Kono, Yu Arai, Takeshi Maruoka, Masashi Yamamoto, Yousuke Goto, Seiji Takahashi, Takashi Nishiyama, Hideo Horibe

    Thin Solid Films   562 ( 1 )   632 - 637   2014

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  • Scanning Removal of Ion-implanted Novolak Resist by using a Laser Irradiation

    Kamimura Tomosumi, Kuroki Yuta, Kiriyama Takuya, Muraoka Hiroki, Nishiyama Takashi, Harada Toshiyuki, Kuramae Hiroyuki, Horibe Hideo

    Journal of Photopolymer Science and Technology   27 ( 2 )   237 - 241   2014( ISSN:09149244

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    Laser resist stripping for the ion-implanted novolak resist was successfully performed without occurring laser damage to the Si wafer. In order for the advanced laser resist stripping method to be successful, it is important for the pulsed laser beam to pass though the ion-implanted resist and absorb into the Si wafer surface. The novolak resists which are implanted with B, P, and As ions, respectively, were irradiated with a pulsed 532nm laser. Regardless of the implanted ion species and density, more than 74 % of the laser power was found to absorb into the Si wafer surface. For the laser irradiation of 1 pulse, the ion-implanted resist with a density of 5.0 X 10<sup>13</sup> atoms/cm<sup>2</sup> was completely stripped in the same way as that of a non-implanted resist. The optical absorption of the resist surface increased as the density of the ion-implantation increased. In case of the ion-implanted resist with a density of 5.0 X 10<sup>15</sup> atoms/cm<sup>2</sup>, the resist was stripped by 20 pulses irradiation without occurring laser-induced surface damage. A scanning removal of the highly ion-implanted resist was also successfully stripped by using an optimized irradiation condition. A highly ion-implanted resist was continuously stripped by the scanning laser irradiation with 20 pulses.

    DOI: 10.2494/photopolymer.27.237

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  • Scanning removal of ion-implanted novolak resist by using a laser irradiation Reviewed

    Tomosumi Kamimura, Yuta Kuroki, Takuya Kiriyama, Hiroki Muraoka, Takashi Nishiyama, Yoshiyuki Harada, Hiroyuki Kuramae, Hideo Horibe

    Proceedings of SPIE - The International Society for Optical Engineering   9238   2014( ISSN:0277-786X

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    © 2014 SPIE. Novolak resists which are implanted with B, P, and As ions, respectively, were irradiated with a pulsed 532nm laser. Regardless of the implanted ion species and density, more than 74 % of the laser power was found to absorb into the Si wafer surface. For the laser irradiation of 1 pulse, the ion-implanted resist with a density of 5.0×1013 atoms/cm2 was completely stripped in the same way as that of a nonimplanted resist. The optical absorption of the resist surface increased as the density of the ionimplantation increased. In case of the ion-implanted resist with a density of 5.0×1015 atoms/cm2, the resist was stripped by 20 pulses irradiation without occurring laser-induced surface damage. A scanning removal of the highly ion-implanted resist was also successfully stripped by using an optimized irradiation condition. A highly ion-implanted resist was continuously stripped by the scanning laser irradiation with 20 pulses.

    DOI: 10.1117/12.2073477

  • Reaction mechanism of polymer removal using wet ozone Reviewed

    Yousuke Goto, Yukihiro Angata, Emi Tsukazaki, Seiji Takahashi, Kunihiko Koike, Tadaaki Yamagishi, Hideo Horibe

    Japanese Journal of Applied Physics   53 ( 2 PART 2 )   2014( ISSN:0021-4922

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    We evaluated the removal of polymers with various chemical structures using wet ozone, and investigated the reaction mechanism between wet ozone and polymers using fourier-transform infrared (FT-IR) and in situ FT-IR. The removal rate of poly(vinyl phenol) (PVP), which has a carbon-carbon double bond (C=C) in the side chain was lower than that of the novolak resin, which has C=C in the main chain. Poly(methyl methacrylate) (PMMA), which has no C=C, was not removed. It was considered that the ozone reaction is an electrophilic reaction, and the wet ozone should react with C=C with ease. The removal rate of PVP with rinsing was higher than that without rinsing. This result indicates that the reaction products remain on the Si wafer. However, in the novolak resin, there was no difference between with and without rinsing. It was considered that the main chain of the novolak resin was decomposed to gas by the reaction with wet ozone. In the FT-IR measurement of PVP, the peak intensity of C=O stretching of carboxylic acid increased with increasing wet ozone processing time. However, in the novolak resin, there was no difference between with and without rinsing. Moreover, the peak intensity of the C=O stretching of carboxylic acid did not increase with increasing wet ozone processing time after 10 s of wet ozone processing time. From the result of in situ FT-IR, in the removal of the novolak resin using wet ozone, the main chain of the novolak resin was decomposed, and the reaction products of the wet ozone and novolak resin (low-molecular-weight carboxylic acid) should change to CO2. © 2014 The Japan Society of Applied Physics.

    DOI: 10.7567/JJAP.53.02BB04

  • Dismantling Behavior of Pressure Sensitive Adhesives Using Acrylic Block and Random Copolymers in Response to Photoirradiation and Postbaking

    Sato Eriko, Taniguchi Kentaro, Inui Tadashi, Yamanishi Keisuke, Horibe Hideo, Matsumoto Akikazu

    Journal of Photopolymer Science and Technology   27 ( 4 )   531 - 534   2014( ISSN:09149244

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    The formation of void between a PET support film and an adhesive layer is one of the reasons for the PET interfacial failure of B1 (PtBA<sub>w</sub>-b-(tBA<sub>x</sub>-co-2EHA<sub>y</sub>-co-HEA<sub>z</sub>)) after the dismantling. However, a major part of B1 specimens was occupied by pillar-like structures, even where PET interfacial failure was observed. It seems that the macroscopic morphology of adhesive layers is not only factors to determine failure modes. Although both R1 (P(tBA<sub>x</sub>-co-2EHA<sub>y</sub>-co-HEA<sub>z</sub>) and the soft segment of B1 have much lower T<sub>g</sub> than room temperature, their mechanical properties seems to be different after the dismantling treatment as being indicated by ΔC<sub>p</sub> values. The fact that B2 is resulted in cohesive failure in spite of very low peel strength after the dismantling suggests the important role of cross-linking on cohesive force.

    DOI: 10.2494/photopolymer.27.531

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  • Effect of Heat-Treatment Temperature after Polymer Melt and Blending Ratio on the Crystalline Structure of PVDF in a PVDF/PMMA Blend

    H. Horibe, Y. Hosokawa, H. Oshiro, Y. Sasaki, S. Takahashi, A. Kono, T. Danno, and T. Nishiyama

    Polymer J.   45 ( 12 )   1195 - 1201   2013.12

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  • Effect of heat-treatment temperature after polymer melt and blending ratio on the crystalline structure of PVDF in a PVDF/PMMA blend Reviewed

    Horibe Hideo, Hosokawa Yukari, Oshiro Hironori, Sasaki Yasutaka, Takahashi Seiji, Kono Akihiko, Nishiyama Takashi, Danno Tetsuya

    POLYMER JOURNAL   45 ( 12 )   1195 - 1201   2013.12( ISSN:0032-3896

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    DOI: 10.1038/pj.2013.53

  • Effect of heat-treatment temperature after polymer melt and blending ratio on the crystalline structure of PVDF in a PVDF/PMMA blend Reviewed

    Hideo Horibe, Yukari Hosokawa, Hironori Oshiro, Yasutaka Sasaki, Seiji Takahashi, Akihiko Kono, Takashi Nishiyama, Tetsuya Danno

    Polymer Journal   45 ( 12 )   1195 - 1201   2013.12( ISSN:0032-3896

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    We analyzed control of the crystalline structure of poly(vinilydene fluoride) (PVDF) in a PVDF/poly(methylmethacrylate) (PMMA) blend by varying the polymer blend ratio (PVDF/PMMA=60/40, 70/30 and 80/20 wt%) and the heat-treatment temperature (160-210 °C) just after the polymer melt. We obtained PVDF (form I) limitedly by heat treatment at 185 and 190 °C after blending PVDF/PMMA 70/30 wt%. The samples produced under other conditions indicated PVDF (form II). Results of differential scanning calorimetry (DSC), polarized light micrography and light transmittance indicated that samples of PVDF/PMMA 70/30 wt% heat-treated at 185 and 190 °C exhibited high compatibility between PVDF and PMMA, respectively. In contrast, PVDF (form II) samples obtained in other conditions indicated lower compatibility. We assumed that PVDF crystalline structure became the structure of the PVDF (form I) according to decrease of the crystallization rate by the highest compatibility between PVDF and PMMA. Pure PVDF crystallized very fast, so PVDF (form I) cannot be developed from pure PVDF by simply controlling the heat-treatment temperature. © 2013 The Society of Polymer Science, Japan (SPSJ).

    DOI: 10.1038/pj.2013.53

  • Renovating Terminal Care with Urban-type Home Healthcare for Heart Failure Reviewed

    Yumino Dai, Ito Noriki, Fukasawa Takuya, Miyazaki Takako, Yoshida Maki, Horibe Hideo, Shiga Tsuyoshi, Hagiwara Nobuhisa

    JOURNAL OF CARDIAC FAILURE   19 ( 10 )   S112   2013.10( ISSN:1071-9164

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    DOI: 10.1016/j.cardfail.2013.08.046

  • Renovating Terminal Care with Urban-type Home Healthcare for Heart Failure Reviewed

    Dai Yumino, Noriki Ito, Takuya Fukasawa, Takako Miyazaki, Maki Yoshida, Hideo Horibe, Tsuyoshi Shiga, Nobuhisa Hagiwara

    JOURNAL OF CARDIAC FAILURE   19 ( 10 )   S112 - S112   2013.10( ISSN:1071-9164

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  • A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment Reviewed

    Ishijima Tatsuo, Nosaka Kohei, Tanaka Yasunori, Uesugi Yoshihiko, Goto Yousuke, Horibe Hideo

    APPLIED PHYSICS LETTERS   103 ( 14 )   2013.09( ISSN:0003-6951

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    DOI: 10.1063/1.4823530

  • A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment Reviewed

    Tatsuo Ishijima, Kohei Nosaka, Yasunori Tanaka, Yoshihiko Uesugi, Yousuke Goto, Hideo Horibe

    Applied Physics Letters   103 ( 14 )   2013.09( ISSN:0003-6951

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    This paper proposes a photoresist removal process that uses multibubble microwave plasma produced in ultrapure water. A non-implanted photoresist and various kinds of ion-implanted photoresists such as B, P, and As were treated with a high ion dose of 5 × 1015 atoms/cm2 at an acceleration energy of 70 keV; this resulted in fast removal rates of more than 1 μm/min. When the distance between multibubble microwave plasma and the photoresist film was increased by a few millimeters, the photoresist removal rates drastically decreased; this suggests that short-lived radicals such as OH affect high-speed photoresist removal. © 2013 AIP Publishing LLC.

    DOI: 10.1063/1.4823530

  • 溶媒キャスト法により作製した光触媒高分子シートへの紫外光照射効果

    曽根 新,前田 正彦,堀邊 英夫

    高分子論文集   70 ( 9 )   496 - 501   2013.09

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  • 溶媒キャスト法により単一溶媒から作製したPVDFの結晶構造と物性との相関

    佐々木保飛,大城 浩徳,高橋 聖司,河野 昭彦,西山 聖,曾澤 康治,堀邊 英夫

    高分子論文集   70 ( 9 )   489 - 495   2013.09

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  • 重量平均分子量の異なるHDPEおよびPMMAをベースとしたNi複合材料の導電性

    清水 克哉,中野 創,河野 昭彦,高橋 聖司,堀邊 英夫

    高分子論文集   70 ( 9 )   483 - 488   2013.09

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  • 導電性複合材料におけるPTC特性の定量的解析

    中野 創,清水 克哉,越森 優人,野村 洋史,高橋 聖司,河野 昭彦,扇澤 敏明,堀邊 英夫

    高分子論文集   70 ( 9 )   476 - 482   2013.09

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  • 溶媒キャスト法により作製した光触媒高分子シートへの紫外光照射効果 Reviewed

    曽根 新, 前田 正彦, 堀邊 英夫

    高分子論文集   70 ( 9 )   496 - 501   2013.09

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  • Electrical property of Ni composite based on HDPE and PMMA having differnt M<inf>w</inf> Reviewed

    Katsuya Shimizu, Hajime Nakano, Akihiko Kono, Seiji Takahashi, Takashi Nishiyama, Hideo Horibe

    Kobunshi Ronbunshu   70 ( 9 )   483 - 488   2013.09( ISSN:0386-2186

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    The electrical properties of Ni particle dispersed high-density polyethylene (HDPE) or Poly(methyl methacrylate) (PMMA) composites depend both on its Ni content and the weight-average molecular weight (Mw) of its base polymer. Moreover, we suspect a different conduction mechanism for polymers with a different Mw. As expected, the resistivity at room temperature (ρl) decreases with increasing Ni content in HDPE/Ni and PMMA/Ni, because many conductive paths are formed with increasing Ni content. For equal Ni content in HDPE/Ni, ρL decreases, while the temperature of PTC effect increases with decreasing Mw. On the other hand, in PMMA/Ni composites, ρL decreased and the temperature of PTC effect increased with increasing Mw This tendency is opposite in HDPE/Ni composites. This can be explained with the different distribution of Ni particles in the polymer. SEM images show that Ni particles are unevenly distributed in HDPE/Ni, while it was uniformly distributed PMMA/Ni. Therefore, we think that in HDPE/Ni the change of the degree of crystallinity of polymers with different Mw influences the conductivity strongly. In amorphous PMMA/Ni, the difference in the viscosity after polymer melt strongly influences the conductivity. © 2013, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.70.483

  • UV-light irradiation effect on photocatalytic polymer sheet prepared by solvent casting process Reviewed

    Shin Sone, Masahiko Maeda, Hideo Horibe

    Kobunshi Ronbunshu   70 ( 9 )   496 - 501   2013.09( ISSN:0386-2186

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    TiO2 doped poly vinylidene fluoride (PVDF) sheets were prepared by a solvent casting process. Both PVDF and TiO2 powders were dissolved in N-N dimethylformamide (DMF) solution and then spin-coated onto the Si or glass substrate. The flexible TiO2 doped PVDF sheets are transparent and have PVDF II-type crystallinity. The TiO2 particles distribute in the PVDF sheet with cohesion. Photocatalytic pigment degradation was observed when the sheet was irradiated by UV-light. After 840 hours UV-light irradiation, a significant change in XRD patterns and FT-IR spectra of the TiO2 doped PVDF sheets was not observed, however, the sheets became cloudy because a sub-micrometer surface roughness was formed due to local photocatalytic decomposition of the PVDF structure. As a result, the photocatalytic rate of the pigment decreased because of UV-light scattering. © 2013, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.70.496

  • Quantitative analysis of positive temperature coefficient characteristics of conductive composites Reviewed

    Hajime Nakano, Katsuya Shimizu, Yuto Koshimori, Yoji Nomura, Seiji Takahashi, Akihiko Kono, Toshiaki Ougizawa, Hideo Horibe

    Kobunshi Ronbunshu   70 ( 9 )   476 - 482   2013.09( ISSN:0386-2186

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    Conductive polymer composites filled with carbon or metal particles exhibit a positive-temperature-coefficient (PTC) of resistivity. In our previous studies, we speculated that only the volume expansion of polymers upon heating cause the PTC effect and we conducted quantitative analyses focusing on the decrease of the apparent filler content of the composites during volume expansion of polymers. Later, we found that PTC effect occurs when the conductive path is cut off due to crystal melting and volume expansion of the base polymer along with rising temperature. In this study, we analyzed the PTC effect of polyvinylidene fluoride (PVDF)/Ni composite quantitatively and found that the apparent Ni content (Cni(T)) decreases along with rising temperature. When CNi(T) becomes about 98% of the Ni content at room temperature (Cni-r.T.), the resistivity is 10 times of that at room temperature. When CNi(T) becomes about 96% of Cni-r.t., the resistivity exceeds 108 Ω·cm and the composites serve as insulators. In conclusion, we proved that, the Ni content is not constant when the PTC effect occurs. © 2013, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.70.476

  • A High Speed Photoresist Removal Process Using Multibubble Microwave Plasma under a Mixture of Multiphase Plasma Environment

    T. Ishijima, K. Nosaka, Y. Tanaka, Y. Uesugi, Y. Goto, H. Horibe

    Applied Physics Letters   103 ( 14 )   142101/1-142101/5   2013.08

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  • Development of Ni Particle dispersed poly(methyl methacrylate) composites exhibiting conductor /insulator transition by the positive temperature coefficient effect of efectrical resistivity

    A. Kono, K. Shimizu, H. Nakano, Y. Goto, S. Takahashi, T. Ougizawa, H. Horibe, and M. Yamamoto

    Polymer J.   45 ( 7 )   690 - 694   2013.07

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  • Development of Ni particle dispersed poly(methylmethacrylate) composites exhibiting conductor/insulator transition by the positive temperature coefficient effect of electrical resistivity Reviewed

    Kono Akihiko, Shimizu Katsuya, Nakano Hajime, Yamamoto Masashi, Goto Yousuke, Takahashi Seiji, Ougizawa Toshiaki, Horibe Hideo

    POLYMER JOURNAL   45 ( 7 )   690 - 694   2013.07( ISSN:0032-3896

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    DOI: 10.1038/pj.2012.223

  • Development of Ni particle dispersed poly(methylmethacrylate) composites exhibiting conductor/insulator transition by the positive temperature coefficient effect of electrical resistivity Reviewed

    Akihiko Kono, Katsuya Shimizu, Hajime Nakano, Masashi Yamamoto, Yousuke Goto, Seiji Takahashi, Toshiaki Ougizawa, Hideo Horibe

    Polymer Journal   45 ( 7 )   690 - 694   2013.07( ISSN:0032-3896

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    Development of Ni particle dispersed poly(methylmethacrylate) composites exhibiting conductor/insulator transition by the positive temperature coefficient effect of electrical resistivity is described. The PTC effect of composites was explained by the above models, and so it was assumed that composites composed of amorphous polymer, which do not exhibit the melting phenomenon, do not exhibit the PTC effect. In fact, it was reported that poly(methylmethacrylate) (PMMA)/carbon black composites do not demonstrate the PTC effect, because, unlike crystalline polymers, amorphous polymers do not exhibit drastic volume expansion. In addition, the shape of the PTC curve is affected by the glass transition point, that is, the temperature at the maximum of the PTC curve might change. These results indicate that if the kinds of polymer, filler and filler content are optimized, composites composed of amorphous polymer, which do not have the melting phenomenon, can be expected to exhibit a PTC effect comparable to that of composites composed of crystalline polymer.

    DOI: 10.1038/pj.2012.223

  • Removal of Ion Implanted Poly Vinyl Phenol Using Wet Ozone

    Y. Goto, Y. Angata, M. Yamamoto, T. Seki, J. Matsuo, and H. Horibe

    J. Photopolym. Sci. Technol.   26 ( 4 )   467 - 472   2013.06

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  • 湿潤オゾンを用いたレジスト除去反応の活性化エネルギー評価

    後藤 洋介,船坂 知宏,山本 雅史,小池 国彦,堀邊 英夫

    高分子論文集   70 ( 6 )   295 - 299   2013.06

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  • Relationship between Interfacial Hydrophobicity and Hydroxylation Activity of Fungal Cells Located on an Organic-Aqueous Interface

    S. Oda, N. Sakamoto, H. Horibe, A. Kono, and S. Ohashi

    J. Bioscience and Bioengineering   115 ( 5 )   544 - 546   2013.05

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  • Relationship between interfacial hydrophobicity and hydroxylation activity of fungal cells located on an organic-aqueous interface Reviewed

    Oda Shinobu, Sakamoto Naoki, Horibe Hideo, Kono Akihiko, Ohashi Shinichi

    JOURNAL OF BIOSCIENCE AND BIOENGINEERING   115 ( 5 )   544 - 546   2013.05( ISSN:1389-1723

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    DOI: 10.1016/j.jbiosc.2012.11.017

  • Relationship between interfacial hydrophobicity and hydroxylation activity of fungal cells located on an organic-aqueous interface Reviewed

    Shinobu Oda, Naoki Sakamoto, Hideo Horibe, Akihiko Kono, Shinichi Ohashi

    Journal of Bioscience and Bioengineering   115 ( 5 )   544 - 546   2013.05( ISSN:1389-1723

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    In a liquid-liquid interface bioreactor, fungal cells locate in a hydrophilic polyacrylonitrile microsphere layer on an aqueous-organic interface. In this article, effects of hydrophobicity of the interface on n-decane hydroxylation activity of Monilliera sp. NAP 00702 was examined. (-)-4-Decanol production was significantly enhanced to 132% by addition of polytetrafluoroethylene. © 2012 The Society for Biotechnology, Japan.

    DOI: 10.1016/j.jbiosc.2012.11.017

  • Ni粒子充填高密度ポリエチレン(HDPE)複合材料の電気特性に及ぼすHDPEの分子量およびNi充填率の影響

    清水 克哉,中野 創,河野 昭彦,高橋 聖司,堀邊 英夫

    材料システム   31   19 - 24   2013.04

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  • 湿潤オゾンによるレジスト除去性の雰囲気温度の影響に関する検討

    後藤 洋介,河野 昭彦,高橋 聖司,堀邊 英夫

    材料システム   31   57 - 60   2013.04

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  • プリベーク温度の異なるノボラック系ポジ型レジストの湿潤オゾンによる除去性と化学構造

    安形 行広,後藤 洋介,高橋 聖司,河野 昭彦,小池 国彦,西山 逸雄,嘉本 律,堀邊 英夫

    化学工学論文集   39 ( 2 )   144 - 149   2013.02

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  • UV-Light Irradiation Effect on Photocatalytic Polymer Sheet Prepared by Solvent Casting Process Reviewed

    Sone Shin, Maeda Masahiko, Horibe Hideo

    KOBUNSHI RONBUNSHU   70 ( 9 )   496 - 501   2013( ISSN:0386-2186

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  • Quantitative Analysis of Positive Temperature Coefficient Characteristics of Conductive Composites Reviewed

    Nakano Hajime, Shimizu Katsuya, Koshimori Yuto, Nomura Yoji, Takahashi Seiji, Kono Akihiko, Ougizawa Toshiaki, Horibe Hideo

    KOBUNSHI RONBUNSHU   70 ( 9 )   476 - 482   2013( ISSN:0386-2186

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  • Electrical Property of Ni Composite Based on HOPE and PMMA Having Differnt M-w Reviewed

    Shimizu Katsuya, Nakano Hajime, Kono Akihiko, Takahashi Seiji, Nishiyama Takashi, Horibe Hideo

    KOBUNSHI RONBUNSHU   70 ( 9 )   483 - 488   2013( ISSN:0386-2186

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  • Correlation Between Different Crystal Structures and Physical Properties of PVDF Films Fabricated by Solvent Casting from a Single Solvent Reviewed

    Sasaki Yasutaka, Oshiro Hironori, Takahashi Seiji, Kono Akihiko, Nishiyama Takashi, Aizawa Koji, Horibe Hideo

    KOBUNSHI RONBUNSHU   70 ( 9 )   489 - 495   2013( ISSN:0386-2186

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  • Correlation Between Different Crystal Structures and Physical Properties of PVDF Films Fabricated by Solvent Casting from a Single Solvent Reviewed

    Yasutaka Sasaki, Hironori Oshiro, Seiji Takahashi, Akihiko Kono, Takashi Nishiyama, Koji Aizawa, Hideo Horibe

    KOBUNSHI RONBUNSHU   70 ( 9 )   489 - 495   2013( ISSN:0386-2186

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    Poly(vinylidene fluoride) (PVDF) has three crystal structures: form I, II, and III. The relationship between the PVDF crystal structure and physical properties had not been investigated. We have previously reported that three crystal structures were made from a single solvent. In this study we evaluated the thermal, optical, and electrical properties of all three PVDF crystal structures which can be made by solvent casting using a single solvent. Light transmittance (wavelength: 800 nm, 33 mu m film thickness) was 93% (form II), 95% (form IQ), and 97% (form I). Melting point was 165 degrees C (form I), 174 degrees C (form II), and 173 degrees C (form III). The relative permittivity was 13 (form I), 6 (form III), and 11 (form III). From these results, we confirmed that the physical properties of PVDF depended on the difference in the crystal structure.

    DOI: 10.1295/koron.70.489

  • Resistivity-temperature characteristics of filler-dispersed polymer composites Reviewed

    Nakano Hajime, Shimizu Katsuya, Takahashi Seiji, Kono Akihiko, Ougizawa Toshiaki, Horibe Hideo

    POLYMER   53 ( 26 )   6112 - 6117   2012.12( ISSN:0032-3861

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    DOI: 10.1016/j.polymer.2012.10.046

  • Resistivity-temperature characteristics of filler-dispersed polymer composites Reviewed

    Hajime Nakano, Katsuya Shimizu, Seiji Takahashi, Akihiko Kono, Toshiaki Ougizawa, Hideo Horibe

    Polymer   53 ( 26 )   6112 - 6117   2012.12( ISSN:0032-3861

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    Composites containing carbon nano tube (CNT) or carbon black (CB) conductive particle filler have the special characteristics of positive-temperature-coefficient (PTC) effects of resistivity. We quantitatively studied the relationship between poly(vinylidene fluoride) (PVDF) polymer's thermal volume expansion and the PTC effects of PVDF/CNT and PVDF/CB. The equation to revise filler content at each temperature due to the considerable thermal volume expansion rate of PVDF polymer indicates that filler content decreased with rising temperature. The graphs of filler content at room temperature plotted against apparent filler content with PTC effect were linear and their slopes were constant. From these graphs, we can determine the filler content necessary to occurring PTC effects. For example, the CNT content was 89% at room temperature, and the CB content was 93%. To our knowledge, this study is the first to report such phenomena. © 2012 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.polymer.2012.10.046

  • Enhancement of n-decane hydroxylation activity of Monilliera sp NAP 00702 in a liquid-liquid interface bioreactor by mixing of anion-exchange resin microparticles Reviewed

    Oda Shinobu, Sakamoto Naoki, Horibe Hideo, Kono Akihiko, Ohashi Shinichi

    PROCESS BIOCHEMISTRY   47 ( 12 )   2494 - 2499   2012.12( ISSN:1359-5113

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    DOI: 10.1016/j.procbio.2012.10.013

  • Enhancement of 6-pentyl-alpha-pyrone fermentation activity in an extractive liquid-surface immobilization (Ext-LSI) system by mixing anion-exchange resin microparticles Reviewed

    Oda Shinobu, Michihata Sayumi, Sakamoto Naoki, Horibe Hideo, Kono Akihiko, Ohashi Shinichi

    JOURNAL OF BIOSCIENCE AND BIOENGINEERING   114 ( 6 )   596 - 599   2012.12( ISSN:1389-1723

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    DOI: 10.1016/j.jbiosc.2012.07.008

  • Resistivity-Temperature Characteristics of Filler-Dispersed Polymer Composites

    H. Nakano, K. Shimizu, S. Takahashi, A. Kono, T. Ougizawa, and H. Horibe

    Polymer   53 ( 26 )   6112 - 6117   2012.12

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  • Enhancement of 6-pentyl-α-pyrone fermentation activity in an extractive liquid-surface immobilization (Ext-LSI) system by mixing anion-exchange resin microparticles Reviewed

    Shinobu Oda, Sayumi Michihata, Naoki Sakamoto, Hideo Horibe, Akihiko Kono, Shinichi Ohashi

    Journal of Bioscience and Bioengineering   114 ( 6 )   596 - 599   2012.12( ISSN:1389-1723

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    The addition of anion-exchange resin microparticles into a polyacrylonitrile (PAN) ballooned microsphere layer drastically enhanced the fermentative activity of Trichoderma atroviride AG2755-5NM398 in an extractive liquid-surface immobilization (Ext-LSI) system. The production of 6-pentyl-α-pyrone (6PP), a fungicidal secondary metabolite, was 1.92-fold higher than the control (PAN alone). © 2012 The Society for Biotechnology, Japan.

    DOI: 10.1016/j.jbiosc.2012.07.008

    PubMed

  • Enhancement of n-decane hydroxylation activity of Monilliera sp. NAP 00702 in a liquid-liquid interface bioreactor by mixing of anion-exchange resin microparticles Reviewed

    Shinobu Oda, Naoki Sakamoto, Hideo Horibe, Akihiko Kono, Shinichi Ohashi

    Process Biochemistry   47 ( 12 )   2494 - 2499   2012.12( ISSN:1359-5113

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    Fungal cells immobilized with ballooned polyacrylonitrile (PAN) microsphere (MS) on an interface between a liquid medium and a hydrophobic organic solvent efficiently catalyze various microbial transformations such as hydrolysis, reduction, hydroxylation, and epoxidation of lipophilic substrates dissolved in the organic phase (liquid-liquid interface bioreactor; L-L IBR). In this study, the electric charge of MS layer in the L-L IBR was modified by mixing 4 kinds of anion-exchange, 2 kinds of cation-exchange or a chelating resin microparticles, and applied to regio- and stereoselective subterminal hydroxylation of n-decane to (-)-4-decanol by Monilliera sp. NAP 00702. In general, the addition of cation-exchange and chelating resin microparticles into a PAN-MS layer led to the strong inhibition of fungal growth and hydroxylation activity. On the other hand, the addition of anion-exchange resin microparticles having moderate total capacity (≤1.00 meq/g) significantly increased hyphal growth and hydroxylation activity. Especially, the addition of IRA910CT microparticles (total capacity ≥ 1.00 meq/g) into a PAN-MS layer led to 1.6-fold increase of 4-decanol production. Thus, it was concluded that the moderate addition of anion-exchange resin microparticles into an MS layer in the L-L IBR system was effective to enhancement of fungal growth and hydroxylation activity. © 2012 Elsevier Ltd.

    DOI: 10.1016/j.procbio.2012.10.013

  • Positive-temperature-coefficient effect of electrical resistivity below melting point of poly(vinylidene fluoride) (PVDF) in Ni particle-dispersed PVDF composites

    A. Kono, K. Shimizu, H. Nakano, Y. Goto, Y. Kobayashi, T. Ougizawa, and H. Horibe

    Polymer   53 ( 8 )   1760 - 1764   2012.08

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  • Parametric Study on the Physical Action of Steam-Water Mixture Jet: Removal of Photoresist Film from Silicon Wafer Surfaces Reviewed

    Mashiko Takashi, Sanada Toshiyuki, Nishiyama Itsuo, Horibe Hideo

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 6 )   2012.06( ISSN:0021-4922

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    DOI: 10.1143/JJAP.51.067101

  • Parametric study on the physical action of steam-water mixture jet: Removal of photoresist film from silicon wafer surfaces Reviewed

    Takashi Mashiko, Toshiyuki Sanada, Itsuo Nishiyama, Hideo Horibe

    Japanese Journal of Applied Physics   51 ( 6 PART 1 )   2012.06( ISSN:0021-4922

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    We performed experiments to elucidate the physical action of a steam-water mixture jet, which we have proposed as a promising, environmentally friendly tool for cleaning surfaces. Photoresist-coated silicon wafers were adopted as the target and the jet performance of resist removal was evaluated, with several parameters being varied. We found that the resist-removal performance improves as the thickness or the mechanical strength of the resist film decreases, resist-wafer adhesivity decreases, or jet duration increases. The results imply that the essential part of the resist removal by the jet is a physical process including peel-off, in contrast to the established techniques such as the batch cleaning method utilizing chemical reactions. The results also indicate that the physical impact of the jet can be controlled, which will be a significant advantage in applying the jet as a cleaning technique. © 2012 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.51.067101

  • Effect of Microbubbles on Ozonized Water for Photoresist Removal

    M. Takahashi, H. Ishikawa, T. Asano and H. Horibe

    J. Phys. Chem. C   116 ( 23 )   12578 - 12583   2012.05

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  • Crystal structure control of poly(vinylidene fluoride) (PVDF) in the blend films of PVDF and poly(methyl methacrylate) (PMMA) prepared by solvent casting Reviewed

    Hironori Oshiro, Akihiko Kono, Tetsuya Danno, Hideo Horibe

    Kobunshi Ronbunshu   69 ( 4 )   135 - 141   2012.04( ISSN:0386-2186

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    This paper discusses the fabrication method of Poly(vinylidene fluoride) (I) crystal having excellent dielectric properties. We tried to control the crystal structure of PVDF in the blend films of PVDF and Poly(methyl methacrylate) (PMMA) prepared by solvent casting. PVDF/PMMA = 60/40wt.% blend was dissolved in DMF solvent at 120°C. After casting, the PVDF/PMMA blend films were baked at 150°C (B). Each film was quenched (Q) from melting state and then was annealed at 120°C (QA). As a result, we demonstrated that PVDF (I) crystal grows preferentially under the existence of PMMA. That the crystallization speed of the quenched and annealed PVDF/PMMA blend films (QA) with the blend ratio of PVDF/PMMA = 60/40 wt.% is comparatively slow and forms the PVDF (I) crystal. © 2012, The Society of Polymer Science.

    DOI: 10.1295/koron.69.135

  • Positive-temperature-coefficient effect of electrical resistivity below melting point of poly(vinylidene fluoride) (PVDF) in Ni particle-dispersed PVDF composites Reviewed

    Akihiko Kono, Katsuya Shimizu, Hajime Nakano, Yousuke Goto, Yusuke Kobayashi, Toshiaki Ougizawa, Hideo Horibe

    Polymer   53 ( 8 )   1760 - 1764   2012.04( ISSN:0032-3861

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    This paper discusses the positive-temperature-coefficient effects of resistivity in Ni particle-dispersed poly(vinylidene fluoride) (PVDF) composites based on experiment results from SEM, DSC, and pressure-volume-temperature (PVT) measurements. The melting points of composites with Ni content of 20, 30, 40, and 50vol.% were equal to that of pure PVDF. The PTC effects in composites with Ni content of 40 and 50vol.% occurred at temperatures near the melting point of the PVDF matrix, whereas those in composites with Ni content of 20 and 30vol.% occurred at temperatures below the melting point of the PVDF matrix. We found that the PTC effect occurs even without melting of the matrix polymer. Moreover, we determined that a slight increase in specific volume at temperatures below the melting point of the matrix polymer acts fully as a driving force for forming a gap between fillers. This suggestion was backed up by theoretical analyses using percolation theory and a thermal-fluctuation- induced tunneling model. © 2012 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.polymer.2012.02.048

  • Prebake temperature dependence of development characteristics in the positive-tone novolak resist Reviewed

    Keita Ishiguro, Akihiko Kono, Atsushi Sekiguchi, Katsuto Taniguchi, Hatsuyuki Tanaka, Hideo Horibe

    Kobunshi Ronbunshu   69 ( 2 )   77 - 83   2012.02( ISSN:0386-2186

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    We discuss the effect of prebake temperature on the development characteristics of the positive-tone novolak resin/diazonaphthoquinone (i.e., Photoactivecompound = PAC) resists. Relationships between initial film thickness and sensitivity (E th) of resists with various prebake temperatures were investigated, and multiplex interference and bulk effect were estimated from results of Swing curves of resists. When the prebake temperature is from 80 to 130°C, the sensitivity of resists became lower with rising prebake temperature. Peculiarly, it was observed that the sensitivity of resists degrades remarkably when the prebake temperature is higher than 120°C. On the other hand, the multiplex interference and the bulk effect were independent of prebake temperature. Results of photosensitive parameters (A, B, C) for resists with difference prebake temperatures show that PAC absorption of exposure light (A), resist absorption after exposure (B), and photodegradative rate of PAC (C) were all constant even with differences of prebake temperature. FT-IR and DSC measurements showed no changes in chemical structures of novorlak resin and PAC. The amount of residual solvent in resist film decreased with rising prebake temperature. Peculiarly, the amount of residual solvent at prebake temperatures over 120°C was less than that at prebake temperatures under 120°C. Therefore, we concluded that the sensitivity of the resists becomes lower with rising prebake temperature because the hardness of the resist film increases due to decreases of residual solvent amount because of the rise of prebake temperature. © 2012, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.69.77

  • Study of the lithography characteristics of novolak resist at different PAC concentrations Reviewed

    Sekiguchi Atsushi, Nakao Akichika, Horibe Hideo, Tanaka Hatsuyuki

    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIX   8325   2012( ISSN:0277-786X

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    DOI: 10.1117/12.916037

  • Stripping of the Positive-tone Diazonaphthoquinone/Novolak Resist using Laser Irradiation from Visible to Near Infrared Wavelength Reviewed

    Kamimura Tomosumi, Muraoka Hiroki, Yamana Yuki, Matsura Yoshiaki, Horibe Hideo

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   25 ( 6 )   741 - 746   2012( ISSN:0914-9244

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    DOI: 10.2494/photopolymer.25.741

  • Removal of SU-8 resists using hydrogen radicals generated by tungsten hot-wire catalyzer Reviewed

    Kono Akihiko, Arai Yu, Goto Yousuke, Horibe Hideo

    ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING   8328   2012( ISSN:0277-786X

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    DOI: 10.1117/12.916033

  • Measurement of adhesion force of resist to wafer by using SAICAS: Characteristics of lift-off of resist by steam-water mixed spray Reviewed

    Mashiko Takashi, Sanada Toshiyuki, Horibe Hideo, Nishiyama Itsuo, Watanabe Masao, Hayashida Atsushi

    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES X   187   85 - +   2012( ISSN:1012-0394

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    DOI: 10.4028/www.scientific.net/SSP.187.85

  • Laser removal of positive-tone diazonaphthoquinone/novolak resist without occurring laser-induced damage to the silicon wafer Reviewed

    Muraoka Hiroki, Kamimura Tomosumi, Yamana Yuki, Matsura Yoshiaki, Horibe Hideo

    LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2012   8530   2012( ISSN:0277-786X

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    DOI: 10.1117/12.977338

  • Development of an Environmentally Friendly Resist-Removal Process Using Wet Ozone Reviewed

    Horibe Hideo, Goto Yousuke

    INTERNATIONAL JOURNAL OF POLYMER SCIENCE   2012( ISSN:1687-9422

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    DOI: 10.1155/2012/937928

  • Study of the lithography characteristics of novolak resist at different PAC concentrations Reviewed

    Atsushi Sekiguchi, Akichika Nakao, Hideo Horibe, Hatsuyuki Tanaka

    Proceedings of SPIE - The International Society for Optical Engineering   8325   2012( ISSN:0277-786X

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    In a recent study, we measured the exposure and development characteristics of five types of novolak resists with varying photoactive compound (PAC) concentrations. This report presents measurement results, as well as results of comparisons of patterns and process margins, obtained using the PROLITH lithography simulator. We also used PROLITH to investigate the effects of PAC concentrations on the swing ratio. Both experiment and simulation confirm that increasing PAC loading results in improved exposure latitude and reduced feature size swing ratio. © 2012 SPIE.

    DOI: 10.1117/12.916037

  • Stripping of the positive-tone diazonaphthoquinone/novolak resist using laser irradiation from visible to near infrared wavelength Reviewed

    Tomosumi Kamimura, Hiroki Muraoka, Yuki Yamana, Yoshiaki Matsura, Hideo Horibe

    Journal of Photopolymer Science and Technology   25 ( 6 )   741 - 746   2012( ISSN:0914-9244

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    Laser resist stripping (1) for the positive-tone diazonaphthoquinone (2)/novolak resist (3) was successful without an occurring the laser damage (5) to a Si wafer (6). The fundamental (1064 nm) of pulsed Nd:YAG laser irradiation (4) in the water can improve the resist stripping effect as compared with that of atmosphere irradiation. In the case of the laser irradiation in water, the heat that occurred at Si wafer surface reaches the water on the resist surface across a thin resist layer. The effect of this heat occurs at the interface between resist surface and the water. By momentary cubical expansion of the water at the resist surface, the resist catches the pressure from water. The water on the resist surface will be worked like a wall rejecting a pressure. The resist stripping effect in the water condition was thought to improve by both thermal expansion of the Si wafer and pressure from the water. And also, a laser irradiation of 532 nm having large photon energy was found to be higher resist stripping efficiency than that of the wavelength 1064 nm. © 2012CPST.

    DOI: 10.2494/photopolymer.25.741

  • Removal of SU-8 resists using hydrogen radicals generated by tungsten hot-wire catalyzer Reviewed

    Akihiko Kono, Yu Arai, Yousuke Goto, Hideo Horibe

    Proceedings of SPIE - The International Society for Optical Engineering   8328   2012( ISSN:0277-786X

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    We investigated removal of chemically amplified negative-tone i-line resist SU-8 using hydrogen radicals, which was generated by the catalytic decomposition of H2/N2 mixed gas (H2:N2 = 10:90vol.%) using tungsten hot-wire catalyzer. SU-8 with exposure dose from 7 (Dg100×0.5) to 280mJ/cm2 (Dg100×20) were removed by hydrogen radicals without a residual layer. When the distance between the catalyzer and the substrate was 100mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was 50°C, removal rate of SU-8 was 0.17μm/min independent of exposure dose to the SU-8. Finally, we obtained high removal rate for SU-8 (exposure dose = 14mJ/cm2 (Dg 100)) of approximately 4μm/min when the distance between the catalyzer and the substrate was 20mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was 165°C. © 2012 SPIE.

    DOI: 10.1117/12.916033

  • Measurement of adhesion force of resist to wafer by using SAICAS: Characteristics of lift-off of resist by steam-water mixed spray Reviewed

    Takashi Mashiko, Toshiyuki Sanada, Hideo Horibe, Itsuo Nishiyama, Masao Watanabe, Atsushi Hayashida

    Solid State Phenomena   187   85 - 88   2012( ISSN:1012-0394

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    We performed two experiments on resist-coated wafers. In the measurement of the resist-wafer adhesivity, we confirmed that it is significantly increased by an HMDS layer in between. In the resist-removal experiment using steam-water mixed spray, we found that the area of resist removal is limited within the area of spray application if HMDS is used, otherwise the former can be larger than the latter. These results suggest that the resist removal from a wafer surface by steam-water mixed spray is essentially a peel-off process. © (2012) Trans Tech Publications.

    DOI: 10.4028/www.scientific.net/SSP.187.85

  • Laser removal of positive-tone diazonaphthoquinone/novolak resist without occurring laser-induced damage to the silicon wafer Reviewed

    Hiroki Muraoka, Tomosumi Kamimura, Yuki Yamana, Yoshiaki Matsura, Hideo Horibe

    Proceedings of SPIE - The International Society for Optical Engineering   8530   2012( ISSN:0277-786X

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    Positive-tone diazonaphthoquinone/novolak (DNQ/novolak) resist was stripped from Si wafer by using a pulsed laser beam from visible to near infrared. Silicon wafer with resist was sunk in water to utilize irradiated laser energy effectively. When the resist was irradiated with the fundamental wavelength of the Nd:YAG laser, the resist was stripped from the Si wafer. No damage could be detected from the processed silicon wafer surface. The resist stripping effect in water condition was improved due to both the thermal expansion of the Si wafer and pressure from water. And also, laser irradiation of wavelength 532 nm, having large photon energy, was found to have a higher resist stripping effect than that of wavelength 1064 nm. © 2012 SPIE.

    DOI: 10.1117/12.977338

  • Development of an environmentally friendly resist-removal process using wet ozone Reviewed

    Hideo Horibe, Yousuke Goto

    International Journal of Polymer Science   2012   2012( ISSN:1687-9422

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    We investigated the removal of polymers with various chemical structures and the removal of ion-implanted resists using wet ozone. The removal rates of polymers that have carbon-carbon (C-C) double bonds in the main chain were high. The main chain of these polymers may be decomposed. The removal rates of polymers that have C-C double bonds in the side chain were low. The benzene ring in the side chain changes into carboxylic acid, so their ability to dissolve in water increased. The polymers without C-C double bonds were not removed. Removal of B and P ion-implanted resists became difficult with increasing acceleration energy of ions at implantation. The resist with plastic-deformation hardness that was twice as hard as that of nonimplanted resist should be removed similarly to nonimplanted resist. Using TOF-SIMS, we clarified that the molecule of cresol novolak resin was destroyed and carbonized by ion implantation. © 2012 Hideo Horibe and Yousuke Goto.

    DOI: 10.1155/2012/937928

  • Synergistic Formation of Radicals by Irradiation with Both Vacuum Ultraviolet and Atomic Hydrogen: A Real-Time In Situ Electron Spin Resonance Study

    K. Ishikawa, N. Sumi, A. Kono, H. Horibe, K. Takeda, H. Kondo, M. Sekine, and M. Hori

    J. Phys. Chem. Lett.   2 ( 11 )   1278 - 1281   2011.05

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  • Fabrication and characteristics of ferroelectric/fluorescent oxide structures for ferroelectrically controlled emission devices Reviewed

    Koji Aizawa, Naoya Hashimoto, Hiroyuki Inagaki, Hironori Oshiro, Hideo Horibe, Yoshiaki Tokunaga

    Materials Research Society Symposium Proceedings   1397   14 - 19   2011( ISSN:0272-9172

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    The crystallinity, electrical, and optical properties of the ferroelectric/fluorescent oxide structures using sol-gel-derived (Ba 0.6Sr0.4)TiO3 (BST) and (Sr 0.8Eu0.2)Bi2.2Ta2O9 (Eu-SBT) grown on STO(110) single crystal substrates were introduced for the first time. In the present structures, the SBT films partly included a (116)-oriented Eu-SBT crystallite. The polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal, and then several emission peaks from Eu3+ ion were observed in a photoluminescence spectrum of a present BST/Eu-SBT structure. © 2012 Materials Research Society.

    DOI: 10.1557/opl.2012.260

  • Order of Reaction between Photoresist and Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst

    M. Yamamoto, T. Maruoka, A. Kono, H. Horibe, and H.Umemoto

    Appl. Phys. Express   3 ( 2 )   26501   2010.02

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  • Removal of Ion-implanated Photoresist by Using Atomic Hydrogen

    M. Yamamoto, T. Maruoka, A. Kono, H. Horibe, M. Sakamoto, E. Kusano, H. Seki, and S. Tagawa

    J.Electrochem.Soc.   157 ( 3 )   H361-H370   2010.01

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  • Preparation of PVDF/PMMA Blend Nanofibers by Electrospray Deposition: Effects of Blending Ratio and Humidity Reviewed

    Nasir Muhamad, Matsumoto Hidetoshi, Minagawa Mie, Tanioka Akihiko, Danno Tetsuya, Horibe Hideo

    POLYMER JOURNAL   41 ( 5 )   402 - 406   2009( ISSN:0032-3896

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    DOI: 10.1295/polymj.PJ2008171

  • Removal Performance for Ion-implanted Photoresist by Using Wet Ozone

    M. Yamamoto, H. Horibe, T. Miura, E. Kusano, and S. Tagawa

    J.Electrochem.Soc.   156 ( 7 )   H505-H511   2009

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  • Preparation of PVDF/PMMA blend nanofibers by electrospray deposition: Effects of blending ratio and humidity Reviewed

    Muhamad Nasir, Hidetoshi Matsumoto, Mie Minagawa, Akihiko Tanioka, Tetsuya Danno, Hideo Horibe

    Polymer Journal   41 ( 5 )   402 - 406   2009( ISSN:0032-3896

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    Poly(vinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend nanofibers were prepared by electrospray deposition (ESD). To control the diameter, morphology, and crystalline structure of nanofiber, the effects of the blending ratio and the humidity during ESD were investigated. The increase in the PVDF blending ratio reduced the average fiber diameter and enhanced formation of crystalline structure. In particular, ESD process enhanced crystal formation of PVDF in high-PVDF blending ratio. High humidity reduced the formation of beaded fiber and increased the average fiber diameter. These results provide fundamental information for preparation of the smooth and crystalline PVDF/PMMA blend nanofiber by ESD. © 2009 The Society of Polymer Science.

    DOI: 10.1295/polymj.PJ2008171

  • Fine Structure of PVDF Nanofiber Fabricated by Electrospray Deposition

    T. Danno, M. Nasir, H. Matsumoto, M. Minagawa, A. Tanioka, and H. Horibe

    J. Polymer Science Part B: Polymer Physics   46   558 - 563   2008

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  • Prevalence of metabolic syndrome in the general Japanese population in 2000 Reviewed

    Arai Hidenori, Yamamoto Akira, Matsuzawa Yuji, Saito Yasushi, Yamada Nobuhiro, Oikawa Shinichi, Mabuchi Hiroshi, Teramoto Tamio, Sasaki Jun, Nakaya Noriaki, Itakura Hiroshige, Ishikawa Yuichi, Ouchi Yasuyoshi, Horibe Hiroshi, Shirahashi Nobuo, Kita Toru

    JOURNAL OF ATHEROSCLEROSIS AND THROMBOSIS   13 ( 4 )   202 - 208   2006.08( ISSN:1340-3478

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  • Poly (vinylidene fluoride) Crystal Structures of Poly (vinylidene fluoride) / Poly (methyl methacrylate) Blends after Annealing

    H. Horibe, M. Taniyama

    J. Electrochem. Soc.   153 ( 2 )   G119-G124   2006

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  • Polymorphisms in four genes related to triglyceride and HDL-cholesterol levels in the general Japanese population in 2000 Reviewed

    Arai H, Yamamoto A, Matsuzawa Y, Saito Y, Yamada N, Oikawa S, Mabuchi H, Teramoto T, Sasaki J, Nakaya N, Itakura H, Ishikawa Y, Ouchi Y, Horibe H, Egashira T, Hattori H, Shirahashi N, Kita T

    JOURNAL OF ATHEROSCLEROSIS AND THROMBOSIS   12 ( 5 )   240 - 250   2005.10( ISSN:1340-3478

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  • Polymorphisms in four genes related to triglyceride and HDL-cholesterol levels in the general Japanese population in 2000 Reviewed

    H Arai, A Yamamoto, Y Matsuzawa, Y Saito, N Yamada, S Oikawa, H Mabuchi, T Teramoto, J Sasaki, N Nakaya, H Itakura, Y Ishikawa, Y Ouchi, H Horibe, T Egashira, H Hattori, N Shirahashi, T Kita

    JOURNAL OF ATHEROSCLEROSIS AND THROMBOSIS   12 ( 5 )   240 - 250   2005.10( ISSN:1340-3478

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    We studied the association of six common polymorphisms of four genes related to lipid metabolism with serum lipid levels. We selected single-nucleotide polymorphisms (SNPs) in the genes for cholesteryl ester transfer protein (CETP), lipoprotein lipase (LPL), hepatic lipase (LIPC), and apolipoprotein CIII (APOC3), and studied 2267 individuals randomly selected from the participants of Serum Lipid Survey 2000. There was a significant association of CETP polymorphism (D442G, lnt14 +1 G -&gt; A, and TaqIB), LPL polymorphism (S447X), and LIPC polymorphism (-514 -&gt; CT) with HDL-cholesterol levels. We also found a significant association of LPL polymorphism (S447X) and APOC3 polymorphism (Sstl) with triglyceride levels. This is the largest database showing the association of common genetic variants in lipid metabolism with serum lipid levels in the general Japanese population. Further study is necessary to elucidate the role of these gene polymorphisms in cardiovascular events.

  • Development of the multilayer resist technology for the halftone mask - Examination of middle layer

    Hideo Horibe, Shinya Takamatsu, Tomokazu Ichikawa

    Polymer Preprints, Japan   54 ( 2 )   4029   2005

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    The halftone mask is used in the lithography process to reduce the number of LCD manufacturing. Since the resist is exposed in the part in which the sensitivity curve rises, the problem is that the resist film thickness drastically fluctuated when the exposure dose to the resist slightly fluctuated. We used the low sensitivity resist as a lower layer, and high sensitivity resist as an upper layer. However it was not possible to produce the film thickness stably only by optimizing the bake condition of the two-layered resist, because the two resists blended at the interface. Therefore we added a water-soluble intermediate layer film (poly (acrlylic) acid 8wt% / dodesylbenzensulfonic acid 0.48wt% water solution) between the two resists, and the fluctuation problem of the resist film thickness due to the slight variation of the exposure dose was eliminated.

  • Development of the multilayer resist technology for the halftone mask

    Shinya Takamatsu, Tomokazu Ichikawa, Hideo Horibe

    Polymer Preprints, Japan   54 ( 1 )   1354   2005

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    Publishing type:Research paper (international conference proceedings)  

    The halftone mask is used in the lithography process in LCD manufacturing, and the manufacturing process number is reduced. By the use of the halftone mask, the exposure dose to the resist is adjusted, and three kinds of resist film thickness are produced. However the resist is exposed in the part in which the sensitivity curve rose by the halftone mask. When the exposure dose to the resist slightly fluctuated, the resist film thickness drastically fluctuated. This time, we used two kinds of the resist having different sensitivities. The lower layer resist has low sensitivity and the upper layer resist has high sensitivity. As a result, the sensitivity curve had the horizontal part. Though we applied two resists which optimized the bake condition, the horizontal part was not obtained. We thought that two resists mixed. We added a water-soluble intermediate layer film between two resists, and it became possible that the variation of the resist film thickness by the slight variation of the exposure dose was eliminated.

  • Development of Photo-resist Removal Method Using Ozone Gas with Water Vapor for LCD manufacturing

    S. Noda, M. Miyamoto, H. Horibe, M. Kuzumoto, and T. Kataoka

    J. Electrochem. Soc.   150 ( 9 )   G537-G542   2003

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Books and Other Publications

  • コンポジット材料の紺練・コンパウンド技術と分散・界面制御 第6章 第5節 導電フィラー分散樹脂の温度に対する電気特性

    堀邊英夫ら( Role: Joint author)

    技術情報協会  2013.04  ( ISBN:9784861044794

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    Book type:Scholarly book

  • コンポジット材料の紺練・コンパウンド技術と分散・界面制御 第6章 第5節 導電フィラー分散樹脂の温度に対する電気特性

    堀邊英夫ら( Role: Sole author)

    技術情報協会  2013.04 

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    Book type:Scholarly book

  • コンポジット材料の紺練・コンパウンド技術と分散・界面制御 第6章 第5節 導電フィラー分散樹脂の温度に対する電気特性

    堀邊英夫ら( Role: Joint author)

    技術情報協会  2013.04 

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    Book type:Scholarly book

  • レジストエッチング-水素ラジカルによるレジスト除去-

    堀邊 英夫( Role: Sole author)

    シーエムシー出版(触媒CVD(Cat-CVD)の新展開)  2008.10 

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    Book type:Scholarly book

  • マスク枚数削減のための新規プロセス-ハーフトーンマスク用多層レジスト技術-

    堀邊 英夫( Role: Sole author)

    情報機構  2008.05 

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    Book type:Scholarly book

  • 新規なレジスト剥離技術

    堀邊 英夫( Role: Sole author)

    情報機構  2008.05 

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    Book type:Scholarly book

  • 導電性材料ノウハウ集-配合/設計/評価のポイント-

    堀邊 英夫( Role: Sole author)

    情報機構発行  2007.08 

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    Book type:Scholarly book

  • 半導体・液晶ディスプレイ フォトリソグラフィ技術ハンドブック術

    堀邊 英夫( Role: Sole author)

    リアライズAT発行  2006.01 

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MISC

  • Development of Thermal Latent Reductants and Their Application to Accelerated Degradation of Polyperoxides (Hot Topics) Invited

    Chisato Omori, Michihiro Yuri, Eriko Sato, Takashi Nishiyama, Hideo Horibe

    Kobunshi High Polymers, Japan   67 ( 7 )   383   2018.07

  • 溶媒キャスト法により単一溶媒から作製したPVDFの結晶構造と物性との相関 Reviewed

    佐々木保飛、大城浩徳、高橋聖司、河野昭彦、西山 聖、會澤康治、堀邊英夫

    高分子論文集 (Kobunshi Ronbunshu)   70 ( 9 )   489 - 495   2013.06

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Single Work  

    DOI: 10.1295/koron.70.489

  • CNT分散高分子における抵抗率‐温度特性(2)

    中野創, 清水克哉, 越森優人, 野村洋司, 高橋聖司, 扇澤敏明, 堀邊英夫

    高分子学会予稿集(CD-ROM)   62 ( 1 )   ROMBUNNO.2F25   2013.05

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  • PVDF/PMMAブレンドにおける溶融直後の冷却温度による結晶構造制御

    佐々木保飛, 藤島謙太朗, 高橋聖司, 河野昭彦, 中島康次, 堀邊英夫

    高分子学会予稿集(CD-ROM)   62 ( 1 )   ROMBUNNO.2D07   2013.05

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  • HDPE/フィラー複合材料の高熱伝導化と非定常熱線法による熱伝導率測定

    後藤洋介, 今亜耶乃, 高橋聖司, 堀邊英夫

    高分子学会予稿集(CD-ROM)   62 ( 1 )   ROMBUNNO.2F06   2013.05

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  • Effect of Molecular Weight of High-density Polyethylene (HDPE) and Ni Content on Electrical Properties of Ni Particles dispersed HDPE Composites

    SHIMIZU KATSUYA, NAKANO HAJIME, KONO AKIHIKO, TAKAHASHI SEIJI, HORIBE HIDEO, HORIBE HIDEO

    材料システム   31   19 - 24   2013.03( ISSN:0286-6013

  • ノボラック系ポジ型レジストにおける溶解抑制剤のエステル化率とリソグラフィー特性との関係

    齊藤誠二, 松田卓也, 石黒啓太, 高橋聖司, 河野昭彦, 関口淳, 谷口克人, 田中初幸, 堀邊英夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.28P-B2-8   2013.03

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  • Removal of ion implanted poly vinyl phenol using wet ozone

    Yousuke Goto, Yukihiro Angata, Masashi Yamamoto, Toshio Seki, Jiro Matsuo, Hideo Horibe

    Journal of Photopolymer Science and Technology   26 ( 4 )   467 - 472   2013( ISSN:0914-9244 ( eISSN:1349-6336

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    We have investigated the removal of poly vinyl phenol (PVP) into which was B, P and As ions implanted with a dose of 5×1013~5×1015 atoms/cm2 at 70keV, using wet ozone. Also, we investigated the thickness of altered layer of ion-implanted PVP using Secondary Ion Mass Spectrometry (SIMS). We investigated the chemical reactivity of wet ozone and ion-implanted PVP by FT-IR. The removability of ion-implanted PVP using wet ozone decreased with increasing dose because the degrees of alteration of benzene ring and O-H group increase with increasing dose. From the results of SIMS, the thickness of altered layer of B-ion-implanted PVP was 387nm, that of P-ion-implanted PVP was 232nm, and that of As-ion-implanted PVP was 142nm. However, the degree of alteration should increase in order of B, P and As, because any samples were implanted at same acceleration energy (70keV). FT-IR indicated that benzene ring content percentage was almost same at removed and not removed. On the other hand, in O-H group, there is a clear difference at removed and not removed, O-H group content percentage decreased drastically at implanted PVP with a dose of 5×1014 atoms/cm2 over. Therefore, the removability of ion-implanted PVP using wet ozone depends on O-H group content than that of benzene ring. © 2013 SPST.

    DOI: 10.2494/photopolymer.26.467

  • 陰イオン交換樹脂微粒子を配合した抽出液面固定化(Ext-LSI)システムにおける6-ペンチル-α-ピロン発酵活性の増強(Enhancement of 6-pentyl-α-pyrone fermentation activity in an extractive liquid-surface immobilization (Ext-LSI) system by mixing anion-exchange resin microparticles) Reviewed

    Oda Shinobu, Michihata Sayumi, Sakamoto Naoki, Horibe Hideo, Kono Akihiko, Ohashi Shinichi

    (公社)日本生物工学会 Journal of Bioscience and Bioengineering   114 ( 6 )   596 - 599   2012.12( ISSN:1389-1723

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  • VGCF添加ポリプロピレンの磁場配向

    大林周平, 山登正文, 堀邊英夫

    日本磁気科学会年会プログラム・要旨集   7th   95 - 96   2012.11

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  • Relationship between the development temperature and the resist characteristic of the positive-tone novolak resist

    Seiji Saito, Keita Ishiguro, Seiji Takahashi, Akihiko Kono, Atsushi Sekiguti, Katsuto Taniguchi, Hatsuyuki Tanaka, Hideo Horibe

    Kobunshi Ronbunshu   69 ( 11 )   639 - 645   2012.11( ISSN:0386-2186

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    We examined the relationship between the development temperature and the resist properties of the positive-tone novolak resist. The resolution of the resist became higher with increasing development temperature, because the dissolution rate in exposure area was promoted by an acid-base neutralization reaction, and the dissolution rate in unexposed area was suppressed by an azo-coupling reaction with the photosensitive agent. When the development temperature was 22.5°C, the resist showed the best sensitivity. If the development temperature was lower, the dissolution rate of resist becomes lower by suppressing the acid-base neutralization reaction. If the development temperature was higher, the dissolution rate of resist becomes lower because an azo-coupling reaction which is caused the remaining photosensitive agent in exposed area. The resolution of resist becomes higher with increasing the development temperature, but Eth, becomes higher along with it, and the sensitivity of resist becomes lower. Thus, we concluded that the best suitable resist development temperature (17.3°C∼40.0°C) is 22.5 °C, taking into account the trade off of resolution and sensitivity. ©2012, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.69.639

    CiNii Article

    J-GLOBAL

  • PVDF/PMMAブレンドにおけるPVDFの結晶構造と溶融直後の熱処理温度との関係

    河野昭彦, 細川ゆかり, 大城浩徳, 佐々木保飛, 高橋聖司, 堀邊英夫

    高分子学会予稿集(CD-ROM)   61 ( 2 )   ROMBUNNO.1PB032   2012.09

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  • PVDF/PMMAブレンドをベースポリマーとしたNi複合材料の電気特性

    清水克哉, 野村洋史, 河野昭彦, 高橋聖司, 堀邊英夫

    高分子学会予稿集(CD-ROM)   61 ( 2 )   ROMBUNNO.1Q14   2012.09

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  • Eu添加SBTの薄膜化に関する検討

    吉田翔一, 廣岡賢太郎, 橋本直也, 得永嘉昭, 堀邊英夫, 會澤康治

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.13A-PB1-2   2012.08

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  • Decomposition Removal of the Polymers for Resist Material by the Hydrogen Radical Generated Using Tungsten Hot-Wire Catalyzer

    ARAI Yu, WATANABE Makoto, KONO Akihiko, YAMAGISHI Tadaaki, ISHIKAWA Kenji, HORI Masaru, HORIBE Hideo

    KOBUNSHI RONBUNSHU   69 ( 6 )   266 - 273   2012.06( ISSN:0386-2186

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    We have investigated the removal of base polymers of resist using hydrogen radicals with excellent reduction ability by hot-wire method. Hydrogen radicals were generated by decomposition of H<sub>2</sub> gas on tungsten catalyzer heated at 2400&deg;C. Removal rates of polymers with benzene rings or with cross-linking main chains were slow. It was considered that such cross-linking type polymers have resistance to decomposition to low-molecular compounds because the main chain decomposition and cross-linking reaction proceed simultaneously during hydrogen radical irradiation. Additionally, in the polymers with benzene rings, the reactivity between hydrogen radical and polymer is reduced by resonance stabilization of the benzene ring. Therefore, we clarified that removal rates of the main chain scission type polymers without benzene rings are fast. Furthermore, removal rate was independent of the molecular weight of each polymer. It was considered that the concentrations of monomer units on the surface of polymer film which are the attack sites of hydrogen radicals were constant even with different molecular weights.

    DOI: 10.1295/koron.69.266

    CiNii Article

  • Effect of microbubbles on ozonized water for photoresist removal

    Masayoshi Takahashi, Hiroaki Ishikawa, Toshiyuki Asano, Hideo Horibe

    Journal of Physical Chemistry C   116 ( 23 )   12578 - 12583   2012.06( ISSN:1932-7447 ( eISSN:1932-7455

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    In this paper, we describe the use of ozone microbubbles in photoresist removal from silicon wafers. Ozonized water has attracted much attention as an environmental friendly cleaning method in semiconductor manufacturing. However, it would be desirable to enhance the oxidative ability of ozonized water for practical application. The existence of microbubbles in ozonized water has been shown to significantly enhance the photoresist removal rate due to an elevated dissolved ozone concentration (approximately 2.5 times that of ordinary ozone bubbling) and a direct effect of the microbubbles (removal rate is approximately 1.3 times faster than water with the same concentration of dissolved ozone without microbubbles). Additionally, the ozone microbubble solution was able to effectively remove a high-dose ion-implanted photoresist, which is extremely resistant to removal by ozonized water and other wet chemicals because of its amorphous carbon-like layer, or "crust". Electron spin resonance experiments were also performed without the influence of serious metal contamination and indicated the presence of hydroxyl radicals, which are thought to be formed by interaction of ozone with hydroxide ions adsorbed at the gas-water interface upon collapse of the microbubbles. The hydroxyl radicals play an important role in photoresist removal by the ozone microbubble treatment. © 2012 American Chemical Society.

    DOI: 10.1021/jp301746g

  • Decomposition removal of the polymers for resist material by the hydrogen radical generated using tungsten hot-wire catalyzer

    Yu Arai, Makoto Watanabe, Akihiko Kono, Tadaaki Yamagishi, Kenji Ishkawa, Masara Hori, Hideo Horibe

    Kobunshi Ronbunshu   69 ( 6 )   266 - 273   2012.06( ISSN:0386-2186

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    We have investigated the removal of base polymers of resist using hydrogen radicals with excellent reduction ability by hot-wire method. Hydrogen radicals were generated by decomposition of H2gas on tungsten catalyzer heated at 24000C. Removal rates of polymers with benzene rings or with cross-linking main chains were slow. It was considered that such cross-linking type polymers have resistance to decomposition to lowmolecular compounds because the main chain decomposition and cross-linking reaction proceed simultaneously during hydrogen radical irradiation. Additionally, in the polymers with benzene rings, the reactivity between hydrogen radical and polymer is reduced by resonance stabilization of the benzene ring. Therefore, we clarified that removal rates of the main chain scission type polymers without benzene rings are fast. Furthermore, removal rate was independent of the molecular weight of each polymer. It was considered that the concentrations of monomer units on the surface of polymer film which are the attack sites of hydrogen radicals were constant even with different molecular weights. ©2012, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.69.266

    CiNii Article

  • CNT分散高分子における抵抗率‐温度特性

    中野創, 清水克哉, 河野昭彦, 扇澤敏明, 堀邊英夫

    高分子学会予稿集(CD-ROM)   61 ( 1 )   ROMBUNNO.3PC093   2012.05

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  • Crystal Structure Control of Poly(vinylidene fluoride) (PVDF) in the Blend Films of PVDF and Poly(methyl methacrylate) (PMMA) Prepared by Solvent Casting

    OSHIRO Hironori, KONO Akihiko, DANNO Tetsuya, HORIBE Hideo

    KOBUNSHI RONBUNSHU   69 ( 4 )   135 - 141   2012.04( ISSN:0386-2186

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    This paper discusses the fabrication method of Poly(vinylidene fluoride) (I) crystal having excellent dielectric properties. We tried to control the crystal structure of PVDF in the blend films of PVDF and Poly(methyl methacrylate) (PMMA) prepared by solvent casting. PVDF/PMMA = 60/40 wt.% blend was dissolved in DMF solvent at 120&deg;C. After casting, the PVDF/PMMA blend films were baked at 150&deg;C (B). Each film was quenched (Q) from melting state and then was annealed at 120&deg;C (QA). As a result, we demonstrated that PVDF (I) crystal grows preferentially under the existence of PMMA. That the crystallization speed of the quenched and annealed PVDF/PMMA blend films (QA) with the blend ratio of PVDF/PMMA = 60/40 wt.% is comparatively slow and forms the PVDF (I) crystal.

    DOI: 10.1295/koron.69.135

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  • Hot‐wire法により生成した水素ラジカルによるレジスト材料の分解反応機構 I

    新井祐, 渡邉誠, 河野昭彦, 山岸忠明, 堀邊英夫, 堀邊英夫

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.16A-A5-10   2012.02

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  • イオン注入レジストの構造解析(2)

    後藤洋介, 山本雅史, 信田拓哉, 飯田貴之, 河野昭彦, 堀邊英夫

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.18P-A4-4   2012.02

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  • ノボラック系ポジ型レジストにおける現像温度とリソグラフィ特性との関係

    河野昭彦, 齊藤誠二, 石黒啓太, 関口淳, 谷口克人, 田中初幸, 堀邊英夫

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.18P-A4-3   2012.02

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  • Prebake Temperature Dependence of Development Characteristics in the Positive-Tone Novolak Resist

    ISHIGURO Keita, KONO Akihiko, SEKIGUCHI Atsushi, TANIGUCHI Katsuto, TANAKA Hatsuyuki, HORIBE Hideo

    Kobunshi Ronbunshu   69 ( 2 )   77 - 83   2012.02( ISSN:0386-2186

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    We discuss the effect of prebake temperature on the development characteristics of the positive-tone novolak resin/diazonaphthoquinone (i.e., Photoactivecompound = PAC) resists. Relationships between initial film thickness and sensitivity (E th) of resists with various prebake temperatures were investigated, and multiplex interference and bulk effect were estimated from results of Swing curves of resists. When the prebake temperature is from 80 to 130°C, the sensitivity of resists became lower with rising prebake temperature. Peculiarly, it was observed that the sensitivity of resists degrades remarkably when the prebake temperature is higher than 120°C. On the other hand, the multiplex interference and the bulk effect were independent of prebake temperature. Results of photosensitive parameters (A, B, C) for resists with difference prebake temperatures show that PAC absorption of exposure light (A), resist absorption after exposure (B), and photodegradative rate of PAC (C) were all constant even with differences of prebake temperature. FT-IR and DSC measurements showed no changes in chemical structures of novorlak resin and PAC. The amount of residual solvent in resist film decreased with rising prebake temperature. Peculiarly, the amount of residual solvent at prebake temperatures over 120°C was less than that at prebake temperatures under 120°C. Therefore, we concluded that the sensitivity of the resists becomes lower with rising prebake temperature because the hardness of the resist film increases due to decreases of residual solvent amount because of the rise of prebake temperature. © 2012, The Society of Polymer Science, Japan.

    DOI: 10.1295/koron.69.77

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  • Study of the removal of ion-implanted resists using wet ozone Reviewed

    Yousuke Goto, Yukihiro Angata, Masanori Igarashi, Masashi Yamamoto, Takuya Nobuta, Takayuki Iida, Akihiko Kono, Hideo Horibe

    Japanese Journal of Applied Physics   51 ( 2 PART 1 )   26504 - 026504-6   2012.02( ISSN:0021-4922 ( eISSN:1347-4065

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    We have investigated the removal of novolac resists into which B and P ions had been implanted with a dose of 5 × 10 14 atoms/cm 2 at acceleration energies of 10, 70, and 150 keV (ion-implanted resists), using wet ozone. Also, we confirmed the presence of the surface hardened layer of ion-implanted resists by cross-sectional observation using scanning electron microscopy (SEM), the stripping of the hardened layer using chemicals, and the measurement of the plastic-deformation hardness of the resists by nanoindentation. The removal rate for a resist using wet ozone decreased with increasing acceleration energy because the hardness of the resist increased with increasing acceleration energy. Moreover, we clarified by time-of-flight secondary ion mass spectrometry (TOF-SIMS), that the ion intensity of C 10H - (m=z 121.01) for the hydrocarbon component, which has the unsaturated bonds as a component of the surface hardened layer increased with increasing acceleration energy. Cresol novolac resin was destroyed and carbonized by ion implantation. Therefore, the removal of ion-implanted resists became difficult with increasing acceleration energy. © 2012 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.51.026504

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    J-GLOBAL

  • HDPE/PMMA/Ni複合材料の導電性に関する研究

    野村洋史, 清水克哉, 中野創, 越森優人, 高橋聖司, 堀邊英夫

    高分子学会北陸支部研究発表講演会講演要旨集   61st   181   2012

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  • Removal of ion-implanted resists using high concentration wet ozone

    Yousuke Goto, Yukihiro Angata, Akihiko Kono, Naohisa Makihara, Kunihiko Koike, Hideo Horibe

    Journal of Photopolymer Science and Technology   25 ( 4 )   445 - 448   2012( ISSN:0914-9244 ( eISSN:1349-6336

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    This paper discusses the relationship between ozone concentration and photoresist removal rate, and the removal of ion-implanted photoresists using high concentration wet ozone. The photoresist removal rates increased linearly with increasing ozone concentration. We achieved 3.84 μm/min in ozone concentration of 30vol%. This value is four times as fast as the photoresist removal rate which is expected in a semiconductor manufacturing process. In ozone concentrations of 10vol% and 30vol%, the photoresist into which B ions were implanted with a dose of 5×10 14 atoms/cm 2 at acceleration energy of 70keV was removed. In ozone concentration of 30vol%, the ion-implanted photoresist removal rate was twice as fast as that of ozone concentration of 10vol%. © 2012CPST.

    DOI: 10.2494/photopolymer.25.445

  • PVDF/導電フィラー複合材料の温度に対する電気特性

    中野創, 清水克哉, 越森優人, 野村洋史, 高橋聖司, 扇澤敏明, 堀邊英夫

    高分子学会北陸支部研究発表講演会講演要旨集   61st   175   2012

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  • PVDF/PMMAブレンドにおける溶融直後の冷却速度による結晶構造制御

    藤島謙太朗, 佐々木保飛, 細川ゆかり, 大城浩徳, 高橋聖司, 河野昭彦, 中島康次, 堀邊英夫

    高分子学会北陸支部研究発表講演会講演要旨集   61st   180   2012

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  • HDPE/フィラー複合材料の非定常熱線法による熱伝導率測定

    今亜耶乃, 後藤洋介, 高橋聖司, 堀邊英夫

    高分子学会北陸支部研究発表講演会講演要旨集   61st   202   2012

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  • イオン注入レジストの構造解析

    安形行広, 後藤洋介, 河野昭彦, 高橋聖司, 堀邊英夫

    放射線プロセスシンポジウム講演要旨・ポスター発表要旨集   14th   80   2012

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  • Development of an Environmentally Friendly Resist-Removal Process Using Wet Ozone

    HORIBE,HIDEO, YOUSUKE

    International Journal of Polymer Science Advanced Polymer Particles   ( 937928 )   1 - 14   2011.11

  • イオン注入レジストにおける表面硬化層形成とその水素ラジカルによる除去性

    河野昭彦, 新井祐, 飯田貴之, 信田拓哉, 田川精一, 堀邊英夫, 堀邊英夫

    放射線化学討論会講演要旨集   54th   73 - 74   2011.09

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  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察

    清水克哉, 中野創, 河野昭彦, 小林祐介, 扇澤敏明, 堀邊英夫

    高分子学会予稿集(CD-ROM)   60 ( 2 Disk1 )   ROMBUNNO.1I20   2011.09

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  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度

    大城浩徳, 細川ゆかり, 河野昭彦, 團野哲也, 堀邊英夫

    高分子学会予稿集(CD-ROM)   60 ( 2 Disk1 )   ROMBUNNO.1G17   2011.09

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  • Synergistic formation of radicals by irradiation with both vacuum ultraviolet and atomic hydrogen: A real-time in situ electron spin resonance study

    Kenji Ishikawa, Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    Journal of Physical Chemistry Letters   2 ( 11 )   1278 - 1281   2011.06( ISSN:1948-7185 ( eISSN:1948-7185

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    We report on the surface modification of poly(tetrafluoroethylene) (PTFE) as an example of soft materials and biomaterials that occur under plasma discharge by kinetics analysis of radical formation using in situ real-time electron spin resonance (ESR) measurements. During irradiation with hydrogen plasma, simultaneous measurements of the gas-phase ESR signals of atomic hydrogen and the carbon dangling bond (C-DB) on PTFE were performed. Dynamic changes of the C-DB density were observed in real time, where the rate of density change was accelerated during initial irradiation and then became constant over time. It is noteworthy that C-DBs were formed synergistically by irradiation with both vacuum ultraviolet (VUV) and atomic hydrogen. The in situ real-time ESR technique is useful to elucidate synergistic roles during plasma surface modification. © 2011 American Chemical Society.

    DOI: 10.1021/jz2002937

  • Synergistic Formation of Radicals by Irradiation with Both Vacuum Ultraviolet and Atomic Hydrogen: A Real-Time In Situ Electron Spin Resonance Study

    Kenji Ishikawa, Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

    JOURNAL OF PHYSICAL CHEMISTRY LETTERS   2 ( 11 )   1278 - 1281   2011.06( ISSN:1948-7185

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    We report on the surface modification of poly(tetrafluoroethylene) (PTFE) as an example of soft materials and biomaterials that occur under plasma discharge by kinetics analysis of radical formation using in situ real-time electron spin resonance (ESR) measurements. During irradiation with hydrogen plasma, simultaneous measurements of the gas-phase ESR signals of atomic hydrogen and the carbon dangling bond (C-DB) on PTFE were performed. Dynamic changes of the C-DB density were observed in real time, where the rate of density change was accelerated during initial irradiation and then became constant over time. It is noteworthy that C-DBs were formed synergistically by irradiation with both vacuum ultraviolet (VUV) and atomic hydrogen. The in situ real-time ESR technique is useful to elucidate synergistic roles during plasma surface modification.

    DOI: 10.1021/jz2002937

  • PVDFフィルムの結晶構造と物性について

    大城浩徳, 小林和也, 河野昭彦, 橋本直也, 會澤康治, 大澤敏, 堀邊英夫, 團野哲也

    高分子学会予稿集(CD-ROM)   60 ( 1 Disk1 )   ROMBUNNO.2PD074   2011.05

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  • Ion-implanted resist removal using atomic hydrogen

    H. Horibe, M. Yamamoto, T. Maruoka, Y. Goto, A. Kono, I. Nishiyama, S. Tagawa

    Thin Solid Films   519 ( 14 )   4578 - 4581   2011.05( ISSN:0040-6090

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    We removed B-, P-, and As-ion-implanted positive-tone novolak resists with an implantation dose of 5 × 1012 to 5 × 1015 atoms/cm2 at 70 keV, using atomic hydrogen. Though the removal rate decreased with increase in the implantation dose, all of the ion-implanted resists were removed. The rates of thickness of the surface-hardened layer/all resist layer of B, P, and As implanted resists were 0.38, 0.26, and 0.16, respectively, by SEM observation. The removal rate decreased with increasing the rate of the surface-hardened layer. The energy supplied from the ions to the resist concentrated on the surface side in the increasing order of B-P-As. © 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2011.01.287

  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性

    石黒啓太, 河野昭彦, 関口淳, 谷口克人, 田中初幸, 堀邊英夫, 堀邊英夫

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-BJ-12   2011.03

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  • I121 Resist Removal from a Wafer Surface by Steam-Water Mixed Spray

    Mashiko Takashi, Sanada Toshiyuki, Horibe Hideo, Nishiyama Itsuo, Hashimoto Kentaro

    The Proceedings of the Thermal Engineering Conference   2011 ( 0 )   213 - 214   2011

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    As part of the effort to elucidate the potential of steam-water mixed spray, a high-speed multi-phase thermal fluid, we conducted a series of experiments with resist-coated silicon wafers as the target of the spray. We measured the amount of the resist removed by the spray, and found that it depends on several parameters such as the thickness and mechanical strength of the resist. The results suggest that the resist removal by the spray is essentially a physical process, and the impact of the spray can be controlled, implying the application potentiality of the spray.

    DOI: 10.1299/jsmeted.2011.213

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  • S054102 Resist Removal by Steam-Water Mixed Spray

    SANADA Toshiyuki, MASHIKO Takashi, HASHIMOTO Kentaro, HORIBE Hideo

    The Proceedings of Mechanical Engineering Congress, Japan   2011 ( 0 )   _S054102 - 1-_S054102-3   2011

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    In the manufacturing process of semiconductor device, MEMS, and so on, lithography which uses photo-resist is a key process to fabricate micro or nano-scale structures, and unnecessary resist should be removed after the process. Typically SPM is used for the resist removal. In this study, we apply the method of steam-water mixed spray that can remove resist without chemicals. In order to clarify the detail mechanism of resist removal, we performed resist removal experiment. In the experiment, spray is traversed over a resist-coated wafer and the removal area is evaluated. The resist-coated conditions such as bake temperature, rotating speed are changed to evaluate the effects of mechanical properties of resist. In addition, removal force is measured to estimate the mechanical properties of resist by using SAICAS. As a result, it is shown that thicker or harder resist tends to be difficult to remove and the results suggest that this method mainly utilizes the physical force of high-speed droplets impact.

    DOI: 10.1299/jsmemecj.2011._S054102-1

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    J-GLOBAL

  • Resist removal method using Xe<inf>2</inf> excimer ultraviolet light

    Akihiko Kono, Yousuke Goto, Yukihiro Angata, Fumikazu Mizutani, Hideo Horibe

    Journal of Photopolymer Science and Technology   24 ( 4 )   389 - 395   2011( ISSN:0914-9244 ( eISSN:1349-6336

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    We investigated the removal of positive-tone novolak resist, ArF resist, and positive-tone novolak resists into which B, P, and As ions were implanted with a dose of 5x1014atoms/cm2 at an acceleration energy of 70keV (forming ion-implanted resists) using Xe2 excimer UV light. There was an optimum UV irradiation distance with respect to the removal rate since oxygen could not penetrate into the UV irradiation space when the UV irradiation distance was Omm, and the intensity of the UV light decayed when the UV irradiation distance was too great. It was confirmed that the resist was not removed in a nitrogen environment because ozone and oxygen radicals were not generated. There is an optimum substrate temperature for the removal rate the same as for the UV irradiation distance. It was considered that the reactivity between resist and the ozone and oxygen radical was enhanced but ozone concentration decreased by decomposition of the ozone to oxygen molecules with a rise in substrate temperature. Under the optimum UV irradiation conditions, the UV irradiation time for complete removal of ArF resist (0.15μm thick) was 4min. Although the ion-implanted resists were difficult to remove by conventional methods, B- and P-ion-implanted resists were removed by Xe2 excimer UV light. © 2011 CPST.

    DOI: 10.2494/photopolymer.24.389

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  • Removal of Polymer for Nano-imprint Lithography using Atomic Hydrogen Generated by the Hot-wire Catalyzer

    Akihiko Kono, Takeshi Maruoka, Yu Arai, Yoshihiko Hirai, Hideo Horibe

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   24 ( 4 )   383 - 388   2011( ISSN:0914-9244

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    We investigated the removal characteristics of an ultraviolet (UV) curable polymer for UV nano-imprint lithography (NIL) using atomic hydrogen, which was generated by the catalytic decomposition of H(2) molecules in H(2)/N(2) mixed gas (H(2):N(2)=10:90vol.%) using a tungsten hot-wire catalyzer. The cured polymers were removed by atomic hydrogen without a residual layer. The removal rate of the polymer increased with rising catalyzer temperature. It was assumed that both enhanced reactivity between atomic hydrogen and polymer by the substrate temperature increase due to radiation heat of the catalyzer and increased atomic hydrogen concentration occurred as a result of the rise in catalyzer temperature. When the distance between the catalyzer and the substrate was 100mm, the catalyzer temperature was 2400 degrees C, and the initial substrate temperature was room temperature, the removal rate of polymers was 0.17 mu m/min independent of exposure dose to the polymer. The removal rate of polymers was comparable to the removal rate of general i-line positive-tone novolak resist. The polymer adhering to the micro-asperity portion of the mold was removed without leaving a residual layer by grazing-incidence atomic hydrogen.

    DOI: 10.2494/photopolymer.24.383

  • Removal of polymer for nano-imprint lithography using atomic hydrogen generated by the hot-wire catalyzer

    Akihiko Kono, Takeshi Maruoka, Yu Arai, Yoshihiko Hirai, Hideo Horibe

    Journal of Photopolymer Science and Technology   24 ( 4 )   383 - 388   2011( ISSN:0914-9244 ( eISSN:1349-6336

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    We investigated the removal characteristics of an ultraviolet (UV) curable polymer for UV nano-imprint lithography (NIL) using atomic hydrogen, which was generated by the catalytic decomposition of H2 molecules in H2/N2 mixed gas (H2:N2=10:90vol.%) using a tungsten hot-wire catalyzer. The cured polymers were removed by atomic hydrogen without a residual layer. The removal rate of the polymer increased with rising catalyzer temperature. It was assumed that both enhanced reactivity between atomic hydrogen and polymer by the substrate temperature increase due to radiation heat of the catalyzer and increased atomic hydrogen concentration occurred as a result of the rise in catalyzer temperature. When the distance between the catalyzer and the substrate was 100mm, the catalyzer temperature was 2400°C, and the initial substrate temperature was room temperature, the removal rate of polymers was 0.17μ.m/min independent of exposure dose to the polymer. The removal rate of polymers was comparable to the removal rate of general /-line positive-tone novolak resist. The polymer adhering to the micro-asperity portion of the mold was removed without leaving a residual layer by grazing-incidence atomic hydrogen. © 2011 CPST.

    DOI: 10.2494/photopolymer.24.383

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  • PVDF/PMMAブレンドの光透過性

    小林和也, 大城浩徳, 河野昭彦, 中島康次, 團野哲也, 堀邊英夫

    高分子学会北陸支部研究発表講演会講演要旨集   59th   82   2010.11

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  • PVDFの3種類の結晶構造の作製方法と物性について

    大城浩徳, 小林和也, 河野昭彦, 堀邊英夫, 大澤敏, 團野哲也

    高分子学会北陸支部研究発表講演会講演要旨集   59th   40   2010.11

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  • イオン注入レジストの表面硬さと除去性との関係

    堀邊英夫, 山本雅史, 後藤洋介, 河野昭彦, 西山逸雄

    成形加工シンポジア   2010   229 - 230   2010.11

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  • In Situ Electron Spin Resonance Study for Plasma Surface Interactions

    K. Ishikawa, N. Sumi, A. Kono, HORIBE,HIDEO, K. Takeda, H. Kondo, M. Sekine, M. Hori

    7th International Conference on Reactive Plasmas   55 ( 7 )   116-   2010.10

  • Relationship between the Development Property and the Photo Active Compound Contents of the Positive-Tone Novolak Resist

    NAKAO Akichika, YAMAMOTO Masashi, KONO Akihiko, HORIBE Hideo, SEKIGUCHI Atsushi, TANAKA Hatsuyuki

    The IEICE transactions on electronics C   93 ( 10 )   360 - 366   2010.10( ISSN:1345-2827

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  • Relationship between the Development Property and the Photo Active Compound Contents of the Positive-Tone Novolak Resist

    NAKAO Akichika, YAMAMOTO Masashi, KONO Akihiko, HORIBE Hideo, SEKIGUCHI Atsushi, TANAKA Hatsuyuki

    The IEICE transactions on electronics C   93 ( 10 )   360 - 366   2010.10( ISSN:1345-2827

  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明

    増永啓康, 小川紘樹, 佐々木園, 河野昭彦, 堀邊英夫

    高分子学会予稿集(CD-ROM)   59 ( 2 Disk1 )   ROMBUNNO.2PF070   2010.09

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  • Development of two-layer resist technology for the Halftone mask

    Masashi Yamamoto, Hiroki Kato, Akihiko Kono, Hideo Horibe

    Kobunshi Ronbunshu   67 ( 9 )   506 - 510   2010.09( ISSN:0386-2186

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    A halftone mask was used in a lithography process to reduce the number of steps required in semiconductor device manufacturing. Resist patterns with different film thicknesses were produced at same time using the halftone mask. When the halftone mask is used, the resist is exposed in the area where the sensitivity curve rises. Therefore, it is difficult to make the resist films with thicknesses of several tens of percent. Previously, we fabricated the three layer structure by inserting an intermediate layer composed of a water-soluble polymer between the two resist layers with different sensitivity. We realized that the film thickness of several tens of percent was obtained stably with only the lower layer resist remaining. However, three layer structure is not expected to much reduce the number of steps in lithography process because the coating repeated for three times is needed for fabrication of three layer structure. In this study, we demonstrated a twolayer coating without mixing using two kinds of i-line resist (hydrophilic negative-tone water-soluble resist and hydrophobic negative-tone chemical amplification resist) with different solubility values. Both were dissolvable into an alkaline developer. We thus accomplished a novel two-layer resist technology for the halftone mask. © 2010, The Society of Polymer Science,.

    DOI: 10.1295/koron.67.506

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  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム

    河野昭彦, 堀邊英夫, 増永啓康, 扇澤敏明

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.15P-ZF-11   2010.08

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  • SrTiO<sub>3</sub>単結晶上のEu添加酸化物強誘電体膜の特性評価

    稲垣浩行, 大城浩徳, 堀邊英夫, 得永嘉昭, 會澤康治

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.15A-NJ-2   2010.08

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  • Xe<sub>2</sub>エキシマUV光によるレジスト除去

    河野昭彦, 後藤洋介, 丸岡岳志, 安形行広, 堀邊英夫, 水谷文一

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.14P-ZA-5   2010.08

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  • Effect of cooling rate after polymer melting on electrical properties of high-density polyethylene/Ni composites

    Akihiko Kono, Naoko Miyakawa, Satoshi Kawadai, Yousuke Goto, Takeshi Maruoka, Masashi Yamamoto, Hideo Horibe

    Polymer Journal   42 ( 7 )   587 - 591   2010.07( ISSN:0032-3896 ( eISSN:1349-0540

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    We investigated the effects of cooling rate after polymer melting on the room temperature resistivity (PL) and on the positive temperature coefficient (PTC) effect of resistivity of high-density polyethylene (HDPE)/Ni conductive polymer composites. The L of slowly cooled samples was lower than that of quenched samples. It was hypothesized that slow cooling increases the crystallinity of HDPE, forming conductive paths as Ni particles localize in the amorphous matrix of HDPE. In the PTC effect, the inflection-point temperature of the PTC curve rose to the melting point of the HDPE with increasing Ni content. We speculated that the PTC effect of HDPE/Ni composites might occur by two mechanisms: cubical expansion of HDPE, and the diffusion of localized Ni particles into the amorphous matrix of HDPE as a result of the change from a crystalline matrix to an amorphous matrix on melting of HDPE. © 2010 The Society of Polymer Science, Japan (SPSJ) All rights reserved.

    DOI: 10.1038/pj.2010.39

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  • Order of reaction between photoresist and atomic hydrogen generated by a tungsten hot-wire catalyst

    Masashi Yamamoto, Takeshi Maruoka, Akihiko Kono, Hideo Horibe, Hironobu Umemoto

    Applied Physics Express   3 ( 2 )   026501-1-026501-3   2010.02( ISSN:1882-0778 ( eISSN:1882-0786

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    This paper clarifies the reaction order of photoresist removal using atomic hydrogen by investigating the relationship between atomic hydrogen density (nH) and photoresist removal rate (vrmv). Atomic hydrogen was generated by decomposing hydrogen molecules with a tungsten hot-wire catalyst. In the reaction between atomic hydrogen and photoresist, we found that vrmv increases in direct proportion to nH and revealed that the reaction exhibited a first-order kinetics with respect to n H. © 2010 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.3.026501

  • Removal of ion-implanted photoresists using atomic hydrogen

    Masashi Yamamoto, Takeshi Maruoka, Yousuke Goto, Akihiko Kono, Hideo Horibe, Mune Aki Sakamoto, Eiji Kusano, Hirofumi Seki, Seiichi Tagawa

    Journal of the Electrochemical Society   157 ( 3 )   H361 - H370   2010( ISSN:0013-4651

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    In this paper, we investigated the removal characteristic of positive-tone novolak photoresists into which B, and As ions were implanted with doses of 5× 1012 -5× 1015 atoms/ cm2 at an acceleration energy of 70 keV using atomic hydrogen, and the hardening mechanisms for the photoresists. All of the ion-implanted photoresists with doses up to 5× 1015 atoms/ cm2 were removed without regard for ion species. The removal rates of the photoresists decreased with increasing ion-implantation dose due to hardening of the photoresist surfaces with implantation. The thickness of the surface-hardened layer of the photoresists decreased in the order of B→P→As, and the removal rate increased with decreasing thickness. The energy supplied from the ions to the photoresist concentrated on the surface side in the order of B→P→As, and the impact of the heavier ion on the photoresist was greater than that of the lighter ion. We deduced that the photoresists exhibited carbonization and cross-linkage attributable to the decrease in OH, CH, and O 1s and the increase in CC, C 1s, and π -conjugated systems. © 2010 The Electrochemical Society.

    DOI: 10.1149/1.3288697

  • Substrate temperature dependence of the photoresist removal rate using atomic hydrogen generated by a hot-wire tungsten catalyst

    Masashi Yamamoto, Takeshi Maruoka, Akihiko Kono, Hideo Horibe, Hironobu Umemoto

    Japanese Journal of Applied Physics   49 ( 1 Part 1 )   016701-1-016701-6   2010( ISSN:0021-4922 ( eISSN:1347-4065

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    Instead of photoresist removal methods using chemicals, we investigated an environmentally friendly removal method using atomic hydrogen generated by decomposing hydrogen molecules by contact with a hot-wire tungsten catalyst. We set the distance between the catalyst and the photoresist substrate (D CS) at 20, 60, 100 and 120 mm and evaluated the apparent activation energy (EAP) for the reaction between photoresist and atomic hydrogen at each DCS. The EAP was determined from Arrhenius plots of the photoresist removal rate against the average substrate temperature. When D CS was 20 and 60 mm, EAP decreased with increasing catalyst temperature (WT = 2040-2420°C) and was not constant. However, when DCS was 100 and 120 mm, EAP was nearly constant at 19 ± 1 kJ/mol without depending on WT. We might obtain the activation energy of about 19kJ/mol in the reaction of photoresist with atomic hydrogen. © The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.49.016701

  • Removal of polymers with various chemical structures using wet ozone

    Yousuke Gotoa, Kyouya Kitano, Takeshi Maruoka, Masashi Yamamoto, Akihiko Kono, Hideo Horibe, Seiichi Tagawa

    Journal of Photopolymer Science and Technology   23 ( 3 )   417 - 420   2010( ISSN:0914-9244 ( eISSN:1349-6336

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    We evaluated the chemical reactivity of wet ozone and polymers by estimating removal of polymers with various chemical structures using wet ozone. The removal rates of polymers that have the carbon-carbon double bond (C-C double bond) in the main chain (novolak resin, cis-l,4-polyisoprene) were the fastest. The removal rates of polymers that have a C-C double bond in the side chain (PVP, PS) were slower than those of novolak resin and cis-l,4-polyisoprene. Polymers with no C-C double bond (PMMA, PVC) were not removed. We believe that wet ozone should react easily with C-C double bonds. The main chain of novolak resin and that of cis-l,4-polyisoprene should be decomposed by reaction with wet ozone. In PVP and PS, the benzene ring in the side chain changes into carboxylic acid by reaction with wet ozone. Therefore, the dissolution ability of PVP and PS to water should increase. © 2010 CPST.

    DOI: 10.2494/photopolymer.23.417

  • PVDF/PMMA composite nanofiber fabricated by electrospray deposition: Crystallization of PVDF induced by solvent extraction of PMMA component

    T. Danno, H. Matsumoto, M. Nasir, M. Minagawa, H. Horibe, A. Tanioka

    Journal of Applied Polymer Science   112 ( 4 )   1868 - 1872   2009.05( ISSN:0021-8995 ( eISSN:1097-4628

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    The crystallization of poly(vinylidene fluoride) (PVDF) was observed after the poly(methyl methac-rylate) (PMMA) component was extracted from the PVDF/PMMA (50/50) composite nanofiber fabricated by electrospray deposition, even though the original composite showed a completely amorphous pattern in the wide-angle X-ray diffraction. The content of the β-crystal form in the crystalline region depended on the PVDF/PMMA composite ratios and the type of solvents used for the extraction of the PMMA component, e.g., chloroform and toluene. Thus, the content of the β-crystal form can be controlled by selecting the original PVDF/PMMA composition and the solvent used to extract the PMMA component. © 2009 Wiley Periodicals, Inc.

    DOI: 10.1002/app.29644

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  • Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface

    Masashi Yamamoto, Hideo Horibe, Hironobu Umemoto, Kazuhisa Takao, Eiji Kusano, Masataka Kase, Seiichi Tagawa

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 2 )   026503-   2009.02( ISSN:0021-4922

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    We investigated an environmentally friendly method using atomic hydrogen generated by contact catalysis on a tungsten hot-wire catalyzer to remove photoresist instead of using chemicals and its effects on a Si-wafer surface. We eventually obtained a photoresist removal rate of 2.5 mu m/min attributable to a hydrogen irradiation because the photoresist shrank only under the influence of substrate heating by the catalyzer. The effects of atomic hydrogen irradiation on the substrate surfaces cannot be confirmed. (C) 2009 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.48.026503

  • Removal characteristics of resists having different chemical structures by using ozone and water

    Hideo Horibe, Masashi Yamamoto, Yousuke Goto, Toshiinori Miura, Seiichi Tagawa

    Japanese Journal of Applied Physics   48 ( 2 )   026505-   2009.02( ISSN:0021-4922 ( eISSN:1347-4065

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    We investigated an environmentally friendly resist removal method using ozone and water (wet ozone). The resist removal rate was optimum when the temperature of the wet ozone was 83 °C and that of the substrate was 78 °C, Novolak resin of a positive type of novolak resist base polymer has a carbon-carbon double bond in the main chain, so Novolak resin reacted easily with ozone. The resulting removal rate of the novolak resist was about 1.1 μ/min, which was the highest removal rate among novolak, KrF and ArF resists. For all implanted ion species (B, P, and As), all the resist with ions of 5 × 1013 atoms/cm2 could be removed. Resist with 5 × 1014 atoms/cm2 As and P ions could not be removed at al, but resist with B ion could be removed. The energy to harden the resist of B ion was less than that to harden P and As ions, because B ion is lighter than the other ions. All the resist with ions of 5 × 1015 atoms/cm2 could not be removed. © 2009 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.48.026505

  • Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface

    Masashi Yamamoto, Hideo Horibe, Hironobu Umemoto, Kazuhisa Takao, Eiji Kusano, Masataka Kase, Seiichi Tagawa

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 2 )   026503-   2009.02( ISSN:0021-4922

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    We investigated an environmentally friendly method using atomic hydrogen generated by contact catalysis on a tungsten hot-wire catalyzer to remove photoresist instead of using chemicals and its effects on a Si-wafer surface. We eventually obtained a photoresist removal rate of 2.5 mu m/min attributable to a hydrogen irradiation because the photoresist shrank only under the influence of substrate heating by the catalyzer. The effects of atomic hydrogen irradiation on the substrate surfaces cannot be confirmed. (C) 2009 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.48.026503

  • Photoresist removal using atomic hydrogen generated by hot-wire catalyzer and effects on Si-wafer surface

    Masashi Yamamoto, Hideo Horibe, Hironobu Umemoto, Kazuhisa Takao, Eiji Kusano, Masataka Kase, Seiichi Tagawa

    Japanese Journal of Applied Physics   48 ( 2 )   026503-   2009.02( ISSN:0021-4922 ( eISSN:1347-4065

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    We investigated an environmentally friendly method using atomic hydrogen generated by contact catalysis on a tungsten hot-wire catalyzer to remove photoresist instead of using chemicals and its effects on a Si-wafer surface. We eventually obtained a photoresist removal rate of 2.5 μm/min attributable to a reaction of atomic hydrogen with a positive-tone novolak photoresist, without thermal shrinkage of the photoresist film during atomic hydrogen irradiation because the photoresist shrank only under the influence of substrate heating by the catalyzer. The effects of atomic hydrogen irradiation on the substrate surfaces cannot be confirmed. © 2009 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.48.026503

  • Novel plasmaless photoresist removal method in gas phase at room temperature Reviewed

    T. Miura, M. Kekura, H. Horibe, M. Yamamoto, H. Umemoto

    ECS Transactions   19 ( 3 )   423 - 429   2009( ISSN:1938-5862 ( eISSN:1938-6737

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    Novel plasmaless photoresist removal method in gas phase at room temperature has been developed using pure ozone gas which has nearly 100% of concentration. This method has enabled the removal of high dose ion implanted photoresist that had been difficult to remove so far. Conventionally, the temperature rise of 200°C or more was necessary in the photoresist removal with the ozone gas to achieve an enough effect. Because the strong reactiveness is due to the oxygen radical generated when the ozone molecules decomposed. However, Popping by the temperature rise becomes a problem in the removal of high dose ion implanted photoresist. Then, in this experiment, ethylene gas was used to control the decomposition of ozone molecule at the room temperature. As a result, it was confirmed that the ashing using ethylene gas and ozone gas was effective to remove the high dose ion implanted photoresist under unheating condition. © The Electrochemical Society.

    DOI: 10.1149/1.3120722

  • Removal of ion-implanted photoresists using wet ozone

    Masashi Yamamoto, Yousuke Goto, Takeshi Maruoka, Hideo Horibe, Toshinori Miura, Eiji Kusano, Seiichi Tagawa

    Journal of the Electrochemical Society   156 ( 7 )   H505 - H511   2009( ISSN:0013-4651

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    Using environmentally friendly wet ozone instead of chemicals, we removed B-, P-, and As-ion-implanted positive-tone novolak photoresists with an implantation dose of 5× 1012 -1× 1016 atoms/ cm2 at an acceleration energy of 70 keV. Ion-implanted photoresists with an implantation dose exceeding 5× 1015 atoms/ cm2 could not be removed, but photoresists implanted at doses below 5× 1013 atoms/ cm2 could be removed. Photoresist implanted with B ions at 5× 1014 atoms/ cm2 was removed slowly, but photoresists implanted with P and As ions were not removed at all. The hardness of the photoresist with B ions implanted at 5× 1014 atoms/ cm2 was 1.8 times greater than that of the nonimplanted photoresist (AZ6112), that of the P-ion-implanted photoresist was eight times greater, and that of the As-ion-implanted photoresist was five times greater. The B-ion-implanted photoresist was softer than the P- and As-ion-implanted photoresists. We also obtained the calculation results in which the energy supplied from the B ions to the photoresist was lower than that from P and As ions. We assumed that the ion-implanted photoresists were hardened by cross-linkage due to the energies supplied to the photoresists from the ions. Therefore, we determined that the hardness threshold of the photoresist that could be removed by using wet ozone was twice the hardness of AZ6112. © 2009 The Electrochemical Society.

    DOI: 10.1149/1.3121583

  • Removal of ion implanted resists with various acceleration energy using wet ozone

    Yousuke Goto, Takeshi Maruoka, Masashi Yamamoto, Hideo Horibe, Eiji Kusano, Toshinori Miura, Mituru Kekura, Seiichi Tagawa

    Journal of Photopolymer Science and Technology   22 ( 3 )   321 - 324   2009( ISSN:0914-9244 ( eISSN:1349-6336

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    We investlgated the removal of ion-implanted resists with various acceleration energy using wet ozone. The resist removal rate decreased with increaslng acceleration energy ln B- and P-ion-implanted resists. The hardness of ion-implanted resists increased with increaslng aCCeleration energy as a result of nanoindentation, and was simulated by Stopping and Range f Ions in Matter software (SRIM2008). © 2009 CPST.

    DOI: 10.2494/photopolymer.22.321

  • Relationship between the thermal hardenlng of ion-implanted resist and the resist removal using atomic hydrogen

    Takeshi Maruoka, Yousuke Goto, Masashi Yamamoto, Hideo Horibe, Eiji Kusano, Kazuhisa Takao, Seiichi Tagawa

    Journal of Photopolymer Science and Technology   22 ( 3 )   325 - 328   2009( ISSN:0914-9244 ( eISSN:1349-6336

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    Using atomic hydrogen for its excellent reduction ability, we demonstrated the removal rates and the hardness of ion-implanted resists. Removal rates of B-ion implanted resists uslng atOmic hydrogen decreased with increaslng implantation dose. According to the hardness of the resists, the indentation depth at l00mgf shifted toward the surface of the resists with increaslng implantation doses. In contrast, removal rates of thermally hardened resists decreased with increaslng baking temperatures. The indentation depth at l00mgf shifted toward the surface of the resists with increaslng baking temperature. Ion-implanted resist removal rate uslng atOmic hydrogen decreased compared with non-ion-implanted resist. We believe that this is because the resists were thermally hardened, attributable to the supplied energy from implanted B-ions. © 2009 CPST.

    DOI: 10.2494/photopolymer.22.325

  • Relationship between the Thermal Hardening of Ion-Implanted Resist and the Resist Removal Using Atomic Hydrogen

    Takeshi Maruoka, Yousuke Goto, Masashi Yamamoto, Hideo Horibe, Eiji Kusano, Kazuhisa Takao, Seiichi Tagawa

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   22 ( 3 )   325 - 328   2009( ISSN:0914-9244

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    Using atomic hydrogen for its excellent reduction ability, we demonstrated the removal rates and the hardness of ion-implanted resists. Removal rates of B-ion implanted resists using atomic hydrogen decreased with increasing implantation dose. According to the hardness of the resists, the indentation depth at 100mgf shifted toward the surface of the resists with increasing implantation doses. In contrast, removal rates of thermally hardened resists decreased with increasing baking temperatures. The indentation depth at 100mgf shifted toward the surface of the resists with increasing baking temperature. Ion-implanted resist removal rate using atomic hydrogen decreased compared with non-ion-implanted resist. We believe that this is because the resists were thermally hardened, attributable to the supplied energy from implanted B-ions.

    DOI: 10.2494/photopolymer.22.325

  • Relationship between the Thermal Hardening of Ion-Implanted Resist and the Resist Removal Using Atomic Hydrogen

    Takeshi Maruoka, Yousuke Goto, Masashi Yamamoto, Hideo Horibe, Eiji Kusano, Kazuhisa Takao, Seiichi Tagawa

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   22 ( 3 )   325 - 328   2009( ISSN:0914-9244

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    Using atomic hydrogen for its excellent reduction ability, we demonstrated the removal rates and the hardness of ion-implanted resists. Removal rates of B-ion implanted resists using atomic hydrogen decreased with increasing implantation dose. According to the hardness of the resists, the indentation depth at 100mgf shifted toward the surface of the resists with increasing implantation doses. In contrast, removal rates of thermally hardened resists decreased with increasing baking temperatures. The indentation depth at 100mgf shifted toward the surface of the resists with increasing baking temperature. Ion-implanted resist removal rate using atomic hydrogen decreased compared with non-ion-implanted resist. We believe that this is because the resists were thermally hardened, attributable to the supplied energy from implanted B-ions.

    DOI: 10.2494/photopolymer.22.325

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  • Relationship between Dissolution Property and Molecular Weight of Positive-tone Novolak Resist

    Masashi Yamamoto, Ryuta Kitai, Hideo Horibe, Atsushi Sekiguchi, Hatsuyuki Tanaka

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   22 ( 3 )   357 - 362   2009( ISSN:0914-9244

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    We demonstrated the relationship between the weight-average molecular weight (M(W)) of novolak resin for the positive-tone novolak resist and the dissolution properties of resists obtained by discrimination curves. We subsequently used PROLITH to evaluate the effects of MW of the resin on the resolution of resists while changing the M(W) from 2940 to 13100 as the fixed number-average molecular weight (M(N)) of the resin (M(N)=605 +/- 35). Dissolution contrast (no: the ratio of the dissolution rate of the resist in the exposed area to the dissolution rate of the resist in the unexposed area) of the resist was improved with an increase in M(W) when M(W) was 6370 or less and was saturated (n(D) is approximately equal to 2.9) when M(W) exceeded 6370. Resist development contrast (delta: gradient of change of the dissolution rate from unexposed area to exposed area) improved with an increase in M(W). Using PROLITH, we demonstrated that the resist pattern profile and the process window improved as M(W) increased. However, resist sensitivity degraded with an increase in M(W). Therefore, from the perspectives of resist sensitivity, process window, and contrast, a resist pattern with a better profile may be made stably using the positive-tone novolak resist with novolak resin of M(W) is approximately equal to M(W) = 6370.

    DOI: 10.2494/photopolymer.22.357

  • Relationship between dissolution property and molecular weight of positive-tone novolak resist

    Masashi Yamamoto, Ryuta Kitai, Hideo Horibe, Atsushi Sekiguchi, Hatsuyuki Tanaka

    Journal of Photopolymer Science and Technology   22 ( 3 )   357 - 362   2009( ISSN:0914-9244 ( eISSN:1349-6336

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    We demonstrated the relationship between the weight-average molecular weight (Mw) of novolak resin for the positive-tone novolak resist and the dissolution properties of resists obtained by discrimination curves. We subsequently used PROLITH to evaluate the effects of Mw of the resin on the resolution of resists while changing the Mw from 2940 to 13100 as the fixed number-average molecular weight (MN) of the resin (MN=605±35). Dissolution contrast (nD: the ratio of the dissolution rate of the resist in the exposed area to the dissolution rate of the resist in the unexposed area) of the resist was improved with an increase in Mw when Mw was 6370 or less and was saturated (nD≒2.9) when Mw exceeded 6370. Resist development contrast (δ: gradient of change of the dissolution rate from unexposed area to exposed area) improved with an increase in Mw. Using PROLITH, we demonstrated that the resist pattern profile and the process window improved as Mw increased. However, resist sensitivity degraded with an increase in Mw. Therefore, from the perspectives of resist sensitivity, process window, and contrast, a resist pattern with a better profile may be made stably using the positive-tone novolak resist with novolak resin of Mw≒6370. © 2009 CPST.

    DOI: 10.2494/photopolymer.22.357

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  • オゾンを用いた環境にやさしいレジスト除去

    堀邊英夫, 堀邊英夫

    オゾン技術に関する講習会講演要旨   26th   25 - 30   2008.09

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  • VUV/XUV領域の高次高調波計測のための蛍光体発光特性評価

    山本雅史, 羽原英明, 堀邊英夫, 田中和夫, 草野英二

    電子情報通信学会論文誌 C   J91-C ( 7 )   370 - 377   2008.07( ISSN:1345-2827

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  • Evaluatation of Photoluminescent Properties on Phosphors for Measuring High-Order Harmonics in Vacuum Ultra-Violet and Extreme Ultra-Violet Region

    Yamamoto Masashi, Habara Hideaki, Horibe Hideo, Tanaka Kazuo A., Kusano Eiji

    The IEICE transactions on electronics C   91 ( 7 )   370 - 377   2008.07( ISSN:1345-2827

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  • エレクトロスプレー法により作製したPVDFナノファイバーの微細構造

    團野哲也, 川口順子, 松本英俊, 皆川美江, 谷岡明彦, NASIR Muhamad, 堀邊英夫

    繊維学会予稿集   63 ( 1/2 )   23   2008.06

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  • Fine structure of PVDF nanofiber fabricated by electrospray deposition

    T. Danno, H. Matsumoto, M. Nasir, S. Shimizu, M. Minagawa, J. Kawaguchi, H. Horibe, A. Tanioka

    Journal of Polymer Science, Part B: Polymer Physics   46 ( 6 )   558 - 563   2008.03( ISSN:0887-6266

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    The fine structure of poly(vinylidene fluoride) (PVDF) nanofiber prepared by electrospray deposition (ESD) has been investigated by wide angle X-ray diffraction (WAXD) and infrared spectroscopy (IR). The β-phase crystal was dominant in the crystalline region. The degree of crystallinity of 0.54 for the nanofiber, determined by Ruland's method, was almost identical to that for a melt pressed sheet of PVDF. The disorder parameter k was 4, which is significantly smaller than the value of 6 for the melt pressed sheet of PVDF. Molecular orientation along the fiber axis was observed by the polarized infrared spectra of the uniaxially aligned nanofiber. These results suggest that the PVDF nanofiber possesses a fiber structure which is by no means inferior to that of practical fibers. © 2008 Wiley Periodicals, Inc.

    DOI: 10.1002/polb.21391

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  • Environmentally friendly photo-resist removal technology

    Hideo Horibe

    WMSCI 2008 - The 12th World Multi-Conference on Systemics, Cybernetics and Informatics, Jointly with the 14th International Conference on Information Systems Analysis and Synthesis, ISAS 2008 - Proc.   4   4 - 5   2008

  • Standing-wave effect in photoresist with and without HMDS

    Masashi Yamamoto, Hideo Horibe, Atsushi Sekiguchi, Eiji Kusano, Seiichi Tagawa

    Journal of Photopolymer Science and Technology   21 ( 2 )   299 - 304   2008( ISSN:0914-9244 ( eISSN:1349-6336

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    We evaluated standing-wave effects in photoresists with and without hexamethyldisilazane (HMDS), which improves adhesion of a photoresist to a Si-wafer substrate, using a resist development analyzer (RDA). The amplitude of a swing curve with HMDS was reduced around 9% compared to that without HMDS. Perhaps, this is considered a reduction of standing-wave effect in the photoresist attributable to an antireflection effect of an HMDS-photoresist mixed layer. The antireflection effect of the layer was evaluated by calculation using PROLITH. We demonstrated that the thickness, a refractive index and an extinction coefficient of the layer were, respectively, 10 nm, 1.60 and 0.5. Using HMDS can expect to improve dimensional stability by 1.17 times on the calculations. ©2008CPST.

    DOI: 10.2494/photopolymer.21.299

  • Resist removal by using atomic hydrogen

    Hideo Horibe, Masashi Yamamoto, Eiji Kusano, Tomokazu Ichikawa, Seiichi Tagawa

    Journal of Photopolymer Science and Technology   21 ( 2 )   293 - 298   2008( ISSN:0914-9244 ( eISSN:1349-6336

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    Resist removal technology by using atomic hydrogen generated by tungsten (W) catalyzer was evaluated. This removal method is the dry process which does not use chemicals, so it was expected that the environmental burden and the cost can decrease. The resist removal rate has increased by raising W current and the substrate temperature. The removal rate of the positive type of novolak resist was over 1 μm/min at the current of 30A (W catalyzer was 2000°C) and at the substrate temperature of 230°C. Polyvinyl phenol (PVP) and poly methylmethacrylate (PMMA) which were used as the shorter wavelength resist were able to be removed as well as the positive type of novolak resist. In these three polymers, PMMA removal rate was about three times as fast as those of others. It is thought that polymer with high removal rate has no benzene ring and is main chain scission type polymer. ©2008CPST.

    DOI: 10.2494/photopolymer.21.293

  • Resist removal by using atomic hydrogen

    Hideo Horibe, Masashi Yamamoto, Eiji Kusano, Tomokazu Ichikawa, Seiichi Tagawa

    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY   21 ( 2 )   293 - 298   2008( ISSN:0914-9244 ( eISSN:1349-6336

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    Resist removal technology by using atomic hydrogen generated by tungsten (W) catalyzer was evaluated. This removal method is the dry process which does not use chemicals, so it was expected that the environmental burden and the cost can decrease. The resist removal rate has increased by raising W current and the substrate temperature. The removal rate of the positive type of novolak resist was over 1 mu m/min at the current of 30A (W catalyzer was 2000 degrees C) and at the substrate temperature of 230 degrees C. Polyvinyl phenol (PVP) and poly methylmethacry late (PMMA) which were used as the shorter wavelength resist were able to be removed as well as the positive type of novolak resist. In these three polymers, PMMA removal rate was about three times as fast as those of others. It is thought that polymer with high removal rate has no benzene ring and is main chain scission type polymer.

    DOI: 10.2494/photopolymer.21.293

  • Resist Removal and Evaluation of Si-wafer by Atomic Hydrogen

    YAMAMOTO MASASHI, HORIBE HIDEO, UMEMOTO HIRONOBU, KUSANO EIJI, TAGAWA SEIICHI

    Proc Int Symp Dry Process   30th   149 - 150   2008

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  • Photo-resist removal using highly concentrated ozone gas - Removal characteristics of various resists

    Toshinori Miura, Mitsuru Kekura, Hideo Horibe, Masashi Yamamoto

    Journal of Photopolymer Science and Technology   21 ( 2 )   311 - 316   2008( ISSN:0914-9244 ( eISSN:1349-6336

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    New processing technologies are demanded which produce hyperfine structures for electronic devices and which do not exacerbate environmental problems. We specifically examined photoresist removal technology for this study. Ozone gas of nearly 100% concentration was applied to various photoresists and ion-implanted-photoresists. Results showed that reactivity with ozone gas differs between a novolac resist, which has a benzene ring structure on a main chain, a KrF resist with this structure on a side chain, and an ArF resist which has no such structure. The activation energy of the KrF resist indicates a value close to that of the novolac resist; the value for the ArF resist was larger than these. Irrespective of the ionic species, the ion-implanted- photoresist of amount Ie 16 cm-2 of the dose can be removed with 0.7 μm/min or less in the ashing of 400°C in processing temperature. Additionally, results showed that the removal speed slows in order of B, As, and P. ©2008 CPST.

    DOI: 10.2494/photopolymer.21.311

  • イオン注入されたレジストのオゾンによる除去

    堀邊英夫, 堀邊英夫, 山本雅史, 神村共住, 田川精一

    応用物理学会学術講演会講演予稿集   68th ( 2 )   731   2007.09

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  • オゾンを用いたレジスト剥離に関する研究

    堀邊 英夫

    平成16年度NEDO産業技術研究助成事業研究成果最終報告書   2007.08

  • 506 System for Very High Cycle Fatigue Reliability Assessment of Nano/Micromaterials

    Chen Qiang, Hashiguchi Gen, Kawagoishi Norio, Suzuki Katsuyori, Kusukawa Kazuhiro, Sakai Tatsuo, Murai Masanori, Horibe Hideo

    The Proceedings of the Materials and Mechanics Conference   2007 ( 0 )   350 - 351   2007

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    A novel strain controlled, free standing tensile fatigue system was developed by using the combined PZT and micromachining technologies in order to conduct in-situ observation and assessment of high cycle fatigue behavior in LP-CVD poly Silicon thin films within a scanning electron microscope (SEM).

    DOI: 10.1299/jsmemm.2007.350

    CiNii Article

    J-GLOBAL

  • Resist removal by using wet ozone

    Hideo Horibe, Masashi Yamamoto, Tomokazu Ichikawa, Tomosumi Kamimura, Seiichi Tagawa

    Journal of Photopolymer Science and Technology   20 ( 2 )   315 - 318   2007( ISSN:0914-9244 ( eISSN:1349-6336

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    We have investigated the resist removal by using wet ozone. Removal rate of the resist was optimum when both of the wet ozone and substrate temperature was at around 60°C. In that condition, the resist removal was better as decreasing the ozone irradiation interval time. Furthermore, in the better conditions the removal rate of resist was accomplished up to 3.4 μm/min by means of being 1.30mm of gap length between the substrate and the ozone irradiation nozzle. In spite of the implanted ion species, the resist with ions of 5×1012 atoms/cm2 could be removed. It was found that the resist removal rate by using wet ozone was corresponded to the removing with chemicals. ©2007TAPJ.

    DOI: 10.2494/photopolymer.20.315

  • Preparation of porous PVDF nanofiber from PVDF/PVP blend by electrospray deposition

    Muhamad Nasir, Hidetoshi Matsumoto, Mie Minagawa, Akihiko Tanioka, Tetsuya Danno, Hideo Horibe

    Polymer Journal   39 ( 10 )   1060 - 1064   2007( ISSN:0032-3896 ( eISSN:1349-0540

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    Nanofiber with porous structures were prepared by electrospray deposition (ESD) from poly(vinylidene fluoride) (PVDF)/poly(vinylpyrrolidone) (PVP) blend and subsequent selective removal of PVP. In the present work, the effect of blending ratio of PVDF/PVP on formation of the pore and crystal structure of residual PVDF fiber was investigated. The residual PVDF nanofiber showed a higher specific surface area (the highest specific surface area was 28.54 m 2/g from PVDF/PVP = 67/33 w/w). The Fourier transform infrared spectroscopy and wide angle X-ray diffraction measurement also showed that selective removal of PVP enhanced the formation of β-phase crystal structure in PVDF nanofiber (ff-phase content > 90%). © 2007 The Society of Polymer Science.

    DOI: 10.1295/polymj.PJ2007037

    CiNii Article

  • Formation of β-phase crystalline structure of PVDF nanofiber by electrospray deposition: Additive effect of ionic fluorinated surfactant

    Muhamad Nasir, Hidetoshi Matsumoto, Mie Minagawa, Akihiko Tanioka, Tetsuya Danno, Hideo Horibe

    Polymer Journal   39 ( 7 )   670 - 674   2007( ISSN:0032-3896 ( eISSN:1349-0540

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    Poly(vinylidene fluoride) (PVDF) nanofibers were prepared by electrospray deposition (ESD). In the present work, the additive effect of ionic fluorinated surfactants-anionic and cationic surfactants - on the diameter, morphology, and crystalline structure of PVDF nanofiber was investigated. The addition of ionic fluorinated surfactants is useful for the formation of bead-free homogeneous fiber. At a higher concentration of the ionic surfactants, thicker fiber was formed. In addition, the Fourier transform infrared spectroscopy and the wide angle X-ray diffraction measurements showed that the addition of both ionic fluorinated surfactants causes a complete change in conformation from the initial α-phase of to the β-phase of PVDF during ESD. A possible mechanism based on the interaction between the polymer and surfactant molecules during ESD is discussed. © 2007 The Society of Polymer Science.

    DOI: 10.1295/polymj.PJ2006233

    CiNii Article

  • LCD製造用多層レジスト技術

    堀邊英夫

    科学と工業   80 ( 11 )   553 - 560   2006.11( ISSN:0368-5918

  • LCD製造用多層レジスト技術の開発

    堀邊 英夫

    科学と工業   80 ( 11 )   553 - 560   2006.11

  • Development of multilayer resist technology for halftone mask in liquid crystal display manufacturing

    Hideo Horibe, Tomokazu Ichikawa, Shinya Takamatsu

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 10 A )   7949 - 7960   2006.10( ISSN:0021-4922 ( eISSN:1347-4065

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    A halftone mask was used in a lithography process to reduce the number of steps required in liquid crystal display (LCD) manufacturing. Three thicknesses of resist films were produced using the halftone mask. Since the resist is exposed in the area where the sensitivity curve rises, a problem arises in that the thickness of the resist film fluctuates drastically when the exposure dose to the resist fluctuates slightly. We tried to stabilize the film thickness using two kinds of resists having different sensitivities. We used a low-sensitivity resist as a lower layer and a high-sensitivity resist as an upper layer. However, it was not possible to produce a stable film thickness because the two resists blended at the interface. Therefore, we added an aqueous polymer solution as an intermediate layer between the resists which were dissolved in a solvent. This solved the blending problem and a stable film thickness was obtained. © 2006 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.45.7949

    CiNii Article

  • オゾンを用いたレジスト除去技術の開発

    堀邊英夫, 市川智和, 山本雅史, 松木秀樹, 高松慎也, 田上祥太, 秦隆志, 神村共住

    応用物理学会学術講演会講演予稿集   67th ( 2 )   650   2006.08

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  • オゾンを用いたレジストの酸化分解に関する研究

    堀邊 英夫

    岩谷直治記念財団研究報告書   29   76 - 83   2006.08

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  • オゾン方式,剥離速める,半導体工程のレジスト除去,高知高専など新装置,有害薬液使わず,コスト5分の1に

    堀邊 英夫

    日本経済新聞   2006.08

  • オゾン方式,剥離速める,半導体工程のレジスト除去,高知高専など新装置,有害薬液使わず,コスト5分の1に

    堀邊 英夫

    日本経済新聞   2006.08

  • Acrylic-type resist removal using 532 nm laser pulses

    Hideo Horibe, Masayuki Fujita, Akira Yoshikado

    Journal of the Electrochemical Society   153 ( 7 )   G609 - G612   2006.07( ISSN:0013-4651

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    We have developed a resist removal process that uses a laser. Laser irradiation far below the ablation threshold was useful to remove a resist that was strongly adhered to the substrate. We used the second harmonics of Nd:YAG (Y3 Al5 O12) laser pulses (532 nm) to irradiate the polyacrylic-type resist for manufacturing printed circuit boards. At appropriate laser fluence, the resist, which transmits the laser light 80% at 532 nm, was detached from the substrate while retaining its original shape. This technique is not based on laser ablation. Therefore, no damage occurred to the substrate. It was a dry process: it used neither water nor chemicals. Compared to conventional chemical processing, environmental pollution is prevented. Power consumption and running costs can be reduced. © 2006 The Electrochemical Society. All rights reserved.

    DOI: 10.1149/1.2197767

  • Resolution and sensitivity of a resist with and without hexamethyldisilazane determined using profilometry

    Hideo Horibe, Masashi Yamamoto, Shinya Takamatsu, Tomokazu Ichikawa

    Journal of Photopolymer Science and Technology   19 ( 1 )   75 - 80   2006( ISSN:0914-9244 ( eISSN:1349-6336

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    We evaluated the resolution and sensitivity of a resist with and without hexamethyldisilazane (HMDS), which improves resist adhesion to substrates, by using profilometry. HMDS was spin-coated onto a Si wafer by using a spin coater. The resist with HMDS was always thicker than that without HMDS for the same exposure dose. The resist pattern profile (resolution) with HMDS was better than that without HMDS. We found that UV absorbance of the resist with HMDS was greater than without HMDS. The resist was mixed with HMDS, and the phenolic hydroxyl groups of the resist were silylated by HMDS. The light through the resist was absorbed in the mixed layer. Also, the mixed layer weakened the reflected light from the Si substrate. We demonstrated that the mixed layer generated by resist with HMDS works as an antireflection coating for the resist. ©2006TAPJ.

    DOI: 10.2494/photopolymer.19.75

  • Novolak resist removal by laser irradiation (532 nm) and adhesion between resist and substrate

    Hideo Horibe, Masayuki Fujita, Itsuo Nishiyama, Akira Yoshikado

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 12 )   8673 - 8675   2005.12( ISSN:0021-4922 ( eISSN:1347-4065

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    A diazonaphthoquinone/novolak resist on a 42-alloy substrate was irradiated by the second harmonic wave (532 nm) of a pulsed Nd3+YAG laser. The resist was removed, despite the existence of hexamethyldisilane (HMDS). There was no apparent damage to the substrate. In contrast, the resist on a Si wafer could not perfectly be removed. In some cases, there was damage to the substrate. The peeling strength of the resist with HMDS was about three times than that without HMDS. The width of the resist removed by laser irradiation without HMDS was 1.02-1.03 times larger than that with HMDS. The use of this process will benefit the environment, since expensive and toxic chemicals are not used. © 2005 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.44.8673

  • オゾンを用いたレジスト剥離に関する研究

    堀邊 英夫

    平成16年度NEDO産業技術研究助成事業研究成果中間報告書   2005.08

  • Electrical conductivity of polymer composites filled with metal

    Hideo Horibe, Tomosumi Kamimura, Kunio Yoshida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 6 A )   4171 - 4175   2005.06( ISSN:0021-4922

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    Conductive polymer composites filled with conductive filler particles exhibit a positive temperature coefficient (PTC) effect. It is desirable to develop these composites with a low resistivity at room temperature and a high resistivity after polymer melting. We evaluated the relationships between the PTC properties of the composites and the type of the metal, the particle size of the metal, and the metal content. Among metals containing composites evaluated in this study, the composite consisting of tungsten (W) showed the best PTC properties. Then we compared the PTC properties between the composites consisting of W and of CB. The composite consisting of W has a lower resistivity at room temperature and a higher resistivity after polymer melting than that consisting of CB. Generally, the composite which has a low resistivity at room temperature has a low resistivity after polymer melting. We developed the composite consisting of high-density polyethylene (HDPE)/W = 59/ 41 vol% (7/93 wt%), which showed a 0.01 Ω cm resistivity at room temperature, and a 105 Ω cm resistivity after polymer melting. This composite has no negative temperature coefficient effect after polymer melting. © 2005 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.44.4171

  • Developments of multilayer resist technology for the halftone mask

    Hideo Horibe, Shinya Takamatsu, Tomokazu Ichikawa, Tomosumi Kamimura

    Kobunshi Ronbunshu   62 ( 5 )   221 - 227   2005.05( ISSN:0386-2186

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    When the halftone mask is used in the lithography process in LCD manufacturing, the manufacturing process number is reduced. By the use of the halftone mask, the exposure dose to the resist is adjusted, and three kinds of resist film thickness are produced. However, the resist is exposed in the part in which the sensitivity curve rises. When the exposure dose to the resist fluctuated slightly, the resist film thickness dRastically fluctuated. This time, we used two kinds of the resist that have different sensitivities. The lower layer resist has low sensitivity and the upper layer resist has high sensitivity. Though we applied two resists which optimized the bake condition, the horizontal part was not obtained. We thought that the two resists may have mixed. We added a water-soluble intermediate layer film between two resists, and then it became possible to eliminate the variation of the resist film thickness due to the slight variation of the exposure dose.

    DOI: 10.1295/koron.62.221

  • オゾンを用いたレジスト剥離に関する研究開発

    堀邊 英夫

    平成16年度育成試験成果集 情報通信分野   1 - 30   2005.05

  • オゾンを用いたレジスト剥離に関する研究開発

    堀邊 英夫

    平成16年度育成試験成果集 情報通信分野   1 - 30   2005.05

  • Electrical conductivity of polymer composites filled with carbon black

    Hideo Horibe, Tomosumi Kamimura, Kunio Yoshida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 4 A )   2025 - 2029   2005.04( ISSN:0021-4922

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    Conducting polymer composites filled with carbon black (CB) exhibit a positive temperature coefficient (PTC) effect. It is desirable to develop these composites with a low resistivity at room temperature and with a high PTC intensity. We evaluated the dependence of the PTC properties of the composites on the type and crystallinity of the component polymers, and the content and particle size of CB. Among the crystalline polymers investigated, we found that high-density polyethylene (HDPE) has the lowest resistivity at room temperature and the highest resistivity after polymer melting. The higher the crystallinity of HDPE, the lower the resistivity of the composites. The resistivity of the composites decreased with increasing CB content. The smaller the CB particle size, the lower the resistivity of the composites. We developed composites with a low resistivity at room temperature and a high resistivity after polymer melting. The resistivities of the composite consisting of 45wt% HDPE and 55wt% CB were 0.17Ωcm at room temperature and 930 Ωcm cm after polymer melting. © 2005 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.44.2025

    CiNii Article

  • Characterization of two-photon absorption related to the enhanced bulk damage resistance in CsLiB<inf>6</inf>O<inf>10</inf> crystal

    Tomosumi Kamimura, Ryosuke Nakamura, Hideo Horibe, Munenori Nishioka, Masashi Yamamoto, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, Kunio Yoshida

    Japanese Journal of Applied Physics, Part 2: Letters   44 ( 20-23 )   L665-L667   2005( ISSN:0021-4922

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    Two-photon absorption of CsLiB6O10 (CLBO) related to the enhanced bulk damage resistance was investigated by using transmittance measurements. Pulsed laser beams at wavelengths of 532 and 266 nm were irradiated to CLBO crystals having several bulk damage resistances while the pulsed laser energy is varied from low enough to be negligible nonlinear absorption up to just below the laser-induced damage threshold. At a wavelength of 532 nm, the nonlinear absorption did not occur even at the laser fluence just below the damage threshold. In contrast, two-photon absorption depending on the bulk damage resistance was clearly observed at a wavelength of 266 nm. A high-quality CLBO having a high-damage resistance shows a 2 times lower two-photon absorption coefficient than that of a conventional CLBO. © 2005 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.44.L665

  • Removal of positive-tone diazonaphthoquinone/novolak resist using UV laser irradiation

    Hideo Horibe, Tomosumi Kamimura, Kunio Yoshida

    Journal of Photopolymer Science and Technology   18 ( 2 )   181 - 185   2005( ISSN:0914-9244

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    This study developed a new method for removing positive-tone diazonaphthoquinone/novolak resist. The fourth harmonic wave (λ=266nm) of a pulse Nd3+:YAG laser was used. Ablation occurred at the resist surface when it was irradiated with over 35mJ/cm2. The amounr of removed resist increased with an increase in the laser energy, and it was possible to remove a 250nm thick resist layer by one pulse irradiation with 94mJ/cm2. Resist with an initial thickness of 1100nm and could be completely removed with no damage to the Si wafer after being irradiated seven times with 94mJ/cm2. The XPS measurement indicated that the residual amount of carbon from the Si surface irradiated by a laser under the vacuum was almost same to that from a Si wafer without resist coating. Resist removal method by laser is environmentally sound and will contribute to energy reduction. © 2005TAPJ.

    DOI: 10.2494/photopolymer.18.181

  • Removal of diazonaphthoquinone/novolak resist using UV laser (266 nm)

    Hideo Horibe, Tomosumi Kamimura, Takashi Hata, Masashi Yamamoto, Ichiro Yamato, Osamu Nigo, Masayuki Fujita, Akira Yoshikado, Kunio Yoshida

    Polymer Journal   37 ( 11 )   813 - 817   2005( ISSN:0032-3896 ( eISSN:1349-0540

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    This study revealed a promising method for removing positive-tone diazonaphthoquinone/novolak resist. The fourth harmonic of an Nd 3+:YAG (Y3Al5O12) pulsed laser (266nm) was irradiated onto the resist. Resist was removed when laser power exceeded 35mJ/cm2, and a 250nm-thick resist was removed with a laser power of 94mJ/cm2. X-ray Photoelectron Spectroscopy (XPS) proved that 1100 nm-thick resist could be completely removed from a Si surface when it was irradiated almost 700mJ/cm2. The resist onto three inch Si wafer (45.58mm2) was removed in two minutes by laser. No damage to the processed Si wafer could be detected by optical microscopic observation. This method is good for environment.

    DOI: 10.1295/polymj.37.813

  • Poly (vinylidene fluoride) crystal structure of poly (vinylidene fluoride) and poly (methyl methacrylate) blend after annealing

    Hideo Horibe, Mitsuru Taniyama

    Polymer Preprints, Japan   54 ( 2 )   3456 - 3457   2005( ISSN:0013-4651

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    The compatibility of Poly (vinylidene fluoride) / Poly (methyl methacrylate) (PVDF/PMMA) blend and the crystal structure of PVDF were examined according to the blend ratio, the cooling speed from the melt state and annealing. Different crystal structures of PVDF (form I) and PVDF (form II) could be produced from PVDF/PMMA blend. Generally, it is said that the crystal structure of PVDF (form I) is very difficult to obtain. When PVDF/PMMA (70/30 wt%) blend was melted, quenching and annealing over 60°C, we revealed that the crystal of PVDF (form I) was dominantly grown. It is considered that the crystallization speed of PVDF depends upon the compatibility of PVDF/PMMA blend. The crystallization speed of PVDF (form I) is slow when the compatibility of the blend is very high, resulting the formation of PVDF (form I).

    DOI: 10.1149/1.2137651

    CiNii Article

  • Novolak resist removal using laser (266/532nm)

    Hideo Horibe

    Journal of Photopolymer Science and Technology   18 ( 6 )   665 - 671   2005( ISSN:0914-9244 ( eISSN:1349-6336

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    Positive-tone diazonaphthoquinone/novolak resist on a 42-alloy (Fe : Ni=42:58wt%) substrate was irradiated by the second harmonic of Nd:YAG (Y 3Al5O12) laser (532nm). The resist was removed (stripped) completely, despite the presence of hexamethyldisilane (HMDS) and the pre-bake condition of the resist. There was no apparent damage to the substrate by the laser. In contrast, this resist on a Si wafer could not be removed completely, and the substrate was occasionally damaged as well. The fourth harmonic of Nd:YAG laser (266nm) was used to irradiate the resist on the Si wafer, ablation was effective. There was no apparent damage to the substrate. This resist does not absorb the energy of the laser at 532nm because ft is optically transparent (over 90%) above 500nm. However, its transmittance was very low (under 5%) below 300nm. The resist therefore absorbed the energy of the 266nm laser, and was removed (ablated). This development addresses environmental concerns because expensive and toxic chemicals are not used. ©2005TAPJ.

    DOI: 10.2494/photopolymer.18.665

  • Enhancement of surface damage resistance by selective chemical removal of CeO<inf>2</inf>

    Tomosumi Kamimura, Shinji Motokoshi, Takayasu Sakamoto, Takahisa Jitsuno, Haruya Shiba, Shigenori Akamatsu, Hideo Horibe, Takayuki Okamoto, Kunio Yoshida

    Proceedings of SPIE - The International Society for Optical Engineering   5647   187 - 187   2005( ISSN:0277-786X

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    The laser-induced damage threshold of polished fused silica surfaces is much lower than the damage threshold of its bulk. It is well known that contaminations of polished surface are one of the causes of low threshold of laserinduced surface damage. Particularly, polishing contamination such as cerium dioxide (CeO2) compound used in optical polishing process is embedded inside the surface layer, and cannot be removed by conventional cleaning. For the enhancement of surface damage resistance, various surface treatments have been applied to the removal of embedded polishing compound. In this paper, we propose a new method using selective chemical removal with high-temperature sulfunc acid (H2SO4). Sulfuric acid could dissolve only CeO2 from the fused silica surface. The surface roughness of fused silica treated H2SO4 was kept through the treatment process. At the wavelength of 355 nm, the surface damage threshold was drastically improved to the nearly same as bulk quality. However, the effect of our treatment was not observed at the wavelength of 1064 nm. The comparison with our previous results obtained from other surface treatments will be discussed.

    DOI: 10.1117/12.585219

  • Developments of multilayer resist technology for the halftone mask

    H Horibe, S Takamatsu, T Ichikawa, T Kamimura

    KOBUNSHI RONBUNSHU   62 ( 5 )   221 - 227   2005( ISSN:0386-2186

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    When the halftone mask is used in the lithography process in LCD manufacturing, the manufacturing process number is reduced. By the use of the halftone mask, the exposure dose to the resist is adjusted, and three kinds of resist film thickness are produced. However, the resist is exposed in the part in which the sensitivity curve rises. When the exposure dose to the resist fluctuated slightly, the resist film thickness drastically fluctuated. This time, we used two kinds of the resist that have different sensitivities. The lower layer resist has low sensitivity and the upper layer resist has high sensitivity. Though we applied two resists which optimized the bake condition, the horizontal part was not obtained. We thought that the two resists may have mixed. We added a water-soluble intermediate layer film between two resists, and then it became possible to eliminate the variation of the resist film thickness due to the slight variation of the exposure dose.

  • Development of a method for resist removal by ozone with acetic acid vapor

    Seiji Noda, Kazumasa Kawase, Hideo Horibe, Masaki Kuzumoto, Tatsuo Kataoka

    Journal of the Electrochemical Society   152 ( 1 )   G73 - G82   2005( ISSN:0013-4651

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    A method of removing the photoresist using ozone gas with acetic acid vapor has been developed. Glass substrates (size 100 × 100 mm2) coated with I-line resist were treated under the conditions of substrate temperature, (Ts) 27-50°C; acetic acid vapor, 2-18 vol %; ozone, 0-9.3 vol % (0-200 g/m3); total gas flow rate, 2 L/min; and gas pressure, 100 kPa. A previous ozone treatment with oversaturated water vapor or sprayed water overcame the limitation of ozone diffusion into the resist by the control of the water film on the resist. In this study, pure acetic acid vapor has been first applied for the resist removal by ozone in order to improve the oxidation rate of the resist, because acetic acid is an inactive solvent in the ozonization, and the solubility of ozone is much higher than water. It was observed that the resist removal rate increased with acetic acid and ozone concentration, and reached at 6 μm/min at Ts = 50°C, which was about six times greater than that of the previous ozone treatment. Metal corrosion of molybdenum and aluminum electrodes was found negligible during the ozone treatment with acetic acid vapor. The mechanism of resist removal without the metal corrosion by ozone with acetic acid vapor is also discussed, based on the solubility of ozone in acetic acid and the corrosion current in ozonized solutions. © 2004 The Electrochemical Society. All rights reserved.

    DOI: 10.1149/1.1833311

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Presentations

  • 湿潤オゾンを用いたレジスト除去における反応メカニズムの解明(II) Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • ノボラック系ポジ型レジストにおける現像温度とリソグラフィ特性との関係 Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • ノボラック系ポジ型レジストにおける現像温度とリソグラフィ特性との関係 Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • ノボラック系ポジ型レジストにおける現像温度とリソグラフィ特性との関係 Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • イオン注入レジストの構造解析(2) Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • イオン注入レジストの構造解析(2) Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • イオン注入レジストの構造解析(2) Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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  • Hot-wire法により生成した水素ラジカルによるレジスト材料の分解反応機構I Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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  • Hot-wire法により生成した水素ラジカルによるレジスト材料の分解反応機構I Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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  • Hot-wire法により生成した水素ラジカルによるレジスト材料の分解反応機構I Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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  • 溶解抑制剤を添加した3成分系化学増幅型EUVレジストの開発II Domestic conference

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    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

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  • 溶解抑制剤を添加した3成分系化学増幅型EUVレジストの開発II Domestic conference

    堀邊 英夫

    第59回応用物理学関係連合講演会  2012 

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  • 溶解抑制剤を添加した3成分系化学増幅型EUVレジストの開発II Domestic conference

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    第59回応用物理学関係連合講演会  2012 

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  • 湿潤オゾンを用いたレジスト除去における反応メカニズムの解明(II) Domestic conference

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    第59回応用物理学関係連合講演会  2012 

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  • 湿潤オゾンを用いたレジスト除去における反応メカニズムの解明(II) Domestic conference

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    第59回応用物理学関係連合講演会  2012 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(3) Domestic conference

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    第59回応用物理学関係連合講演会  2012 

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    Presentation type:Oral presentation (general)  

  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(3) Domestic conference

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    第59回応用物理学関係連合講演会  2012 

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  • Hot-wire法により生成した水素ラジカルによるレジスト材料の分解反応機構I

    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

  • イオン注入レジストの構造解析(2)

    第59回応用物理学関係連合講演会  2012 

  • イオン注入レジストの構造解析(2)

    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

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    第59回応用物理学関係連合講演会  2012 

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    第8回Cat-CVD研究会  2011 

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  • ノボラック系ポジ型レジストにおける現像特性の現像温度依存性 Domestic conference

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    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • ノボラック系ポジ型レジストにおける現像特性の現像温度依存性 Domestic conference

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    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • ノボラック系ポジ型レジストにおける現像特性の現像温度依存性 Domestic conference

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    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性 Domestic conference

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    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性 Domestic conference

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    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性 Domestic conference

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    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • ナノインプリント用樹脂の原子状水素による除去 Domestic conference

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    応用物理学会北陸・信越支部セミナー  2011 

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  • ナノインプリント用樹脂の原子状水素による除去 Domestic conference

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    応用物理学会北陸・信越支部セミナー  2011 

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  • ナノインプリント用樹脂の原子状水素による除去 Domestic conference

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    応用物理学会北陸・信越支部セミナー  2011 

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  • イオン注入レジストの構造解析 Domestic conference

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    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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  • イオン注入レジストの構造解析 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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  • イオン注入レジストの構造解析 Domestic conference

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    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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  • イオン注入レジストの構造と原子状水素による除去性 Domestic conference

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    第8回Cat-CVD研究会  2011 

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  • イオン注入レジストの構造と原子状水素による除去性 Domestic conference

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    第8回Cat-CVD研究会  2011 

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  • イオン注入レジストの構造と原子状水素による除去性 Domestic conference

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    第8回Cat-CVD研究会  2011 

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    第280回電気材料技術懇談会(大阪)  2011 

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  • PVDF(ポリビニリデンフルオライド)の結晶構造の制御 Domestic conference

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    第280回電気材料技術懇談会(大阪)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF(ポリビニリデンフルオライド)の結晶構造の制御 Domestic conference

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    第280回電気材料技術懇談会(大阪)  2011 

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  • PVDFフィルムの結晶構造と物性について Domestic conference

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    第60回高分子学会年次大会  2011 

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  • PVDFフィルムの結晶構造と物性について Domestic conference

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    第60回高分子学会年次大会  2011 

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  • PVDFフィルムの結晶構造と物性について Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • PVDF/PMMAブレンドの結晶高次構造と誘電緩和挙動 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • PVDF/PMMAブレンドの結晶高次構造と誘電緩和挙動 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • PVDF/PMMAブレンドの結晶高次構造と誘電緩和挙動 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • PVDF/PMMAブレンドの溶融直後の熱処理による結晶構造制御 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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  • PVDF/PMMAブレンドの溶融直後の熱処理による結晶構造制御 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/PMMAブレンドの溶融直後の熱処理による結晶構造制御 Domestic conference

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    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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  • PVDF/PMMAブレンドの溶媒キャストによるPVDFⅠ型の作製 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/PMMAブレンドの溶媒キャストによるPVDFⅠ型の作製 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/PMMAブレンドの溶媒キャストによるPVDFⅠ型の作製 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • PVDF/CNT複合材料の抵抗率ー温度特性に関する研究 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/CNT複合材料の抵抗率ー温度特性に関する研究 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/CNT複合材料の抵抗率ー温度特性に関する研究 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/CB複合材料における融点以下でのPTC特性発現 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/CB複合材料における融点以下でのPTC特性発現 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • PVDF/CB複合材料における融点以下でのPTC特性発現 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • 高濃度湿潤オゾンによるフォトレジストの高速除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • 蒸気二流体によるレジスト剥離 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 結晶性ポリマー/Ni粒子複合材料における正の抵抗温度係数特性のメカニズム解析 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • 環状カーボネート/グリコール系溶剤によるネガ型レジストの除去 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • 環境にやさしいポリマー除去技術の開発 Domestic conference

    堀邊 英夫

    第277回 電気材料技術懇談会  2011 

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    Presentation type:Oral presentation (general)  

  • 溶解抑制剤を添加した3成分系化学増幅型EUVレジストの開発 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 湿潤オゾンを用いたレジスト除去に及ぼす基板温度及び湿潤オゾン温度の影響 Domestic conference

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    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 湿潤オゾンを用いたレジスト除去について Domestic conference

    堀邊 英夫

    ナノバブル利活用協議会中間報告会  2011 

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  • 湿潤オゾンによる化学構造を変えたポリマーの除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 湿潤オゾンによる加速エネルギーの異なるイオン注入レジストの除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 湿潤オゾンによるポリマー除去の反応メカニズムの解明 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • 高濃度湿潤オゾンによるフォトレジストの高速除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • 高濃度湿潤オゾンによるフォトレジストの高速除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • 蒸気二流体によるレジスト剥離 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • 蒸気二流体によるレジスト剥離 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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    Presentation type:Oral presentation (general)  

  • 結晶性ポリマー/Ni粒子複合材料における正の抵抗温度係数特性のメカニズム解析 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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    Presentation type:Oral presentation (general)  

  • 結晶性ポリマー/Ni粒子複合材料における正の抵抗温度係数特性のメカニズム解析 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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    Presentation type:Oral presentation (general)  

  • 環状カーボネート/グリコール系溶剤によるネガ型レジストの除去 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • 環状カーボネート/グリコール系溶剤によるネガ型レジストの除去 Domestic conference

    堀邊 英夫

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

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    Presentation type:Oral presentation (general)  

  • 環境にやさしいポリマー除去技術の開発 Domestic conference

    堀邊 英夫

    第277回 電気材料技術懇談会  2011 

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    Presentation type:Oral presentation (general)  

  • 環境にやさしいポリマー除去技術の開発 Domestic conference

    堀邊 英夫

    第277回 電気材料技術懇談会  2011 

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    Presentation type:Oral presentation (general)  

  • 溶解抑制剤を添加した3成分系化学増幅型EUVレジストの開発 Domestic conference

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    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 溶解抑制剤を添加した3成分系化学増幅型EUVレジストの開発 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 湿潤オゾンを用いたレジスト除去に及ぼす基板温度及び湿潤オゾン温度の影響 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 湿潤オゾンを用いたレジスト除去に及ぼす基板温度及び湿潤オゾン温度の影響 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 湿潤オゾンを用いたレジスト除去について Domestic conference

    堀邊 英夫

    ナノバブル利活用協議会中間報告会  2011 

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  • 湿潤オゾンを用いたレジスト除去について Domestic conference

    堀邊 英夫

    ナノバブル利活用協議会中間報告会  2011 

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  • 湿潤オゾンによる化学構造を変えたポリマーの除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 湿潤オゾンによる化学構造を変えたポリマーの除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 湿潤オゾンによる加速エネルギーの異なるイオン注入レジストの除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 湿潤オゾンによる加速エネルギーの異なるイオン注入レジストの除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 湿潤オゾンによるポリマー除去の反応メカニズムの解明 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 湿潤オゾンによるポリマー除去の反応メカニズムの解明 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 水素ラジカル照射による有機薄膜表面処理の実時間・その場観察電子スピン共鳴(ESR)解析 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 水素ラジカル照射による有機薄膜表面処理の実時間・その場観察電子スピン共鳴(ESR)解析 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 水素ラジカルによるレジスト材料の分解反応の解明 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • 水素ラジカルによるレジスト材料の分解反応の解明 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • 水素ラジカルによるレジスト材料の分解反応の解明 Domestic conference

    堀邊 英夫

    第60回高分子討論会  2011 

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  • 樹脂/金属からなる導電性複合材料の温度-抵抗特性 Domestic conference

    堀邊 英夫

    電気学会研究会誘電・絶縁材料研究会  2011 

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  • 樹脂/金属からなる導電性複合材料の温度-抵抗特性 Domestic conference

    堀邊 英夫

    電気学会研究会誘電・絶縁材料研究会  2011 

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  • 樹脂/金属からなる導電性複合材料の温度-抵抗特性 Domestic conference

    堀邊 英夫

    電気学会研究会誘電・絶縁材料研究会  2011 

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  • 導電性基板上に形成したBST/Eu添加SBT積層構造の特性評価 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • 導電性基板上に形成したBST/Eu添加SBT積層構造の特性評価 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • 導電性基板上に形成したBST/Eu添加SBT積層構造の特性評価 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • 原子状水素による高分子薄膜の分解除去とその反応機構 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • 原子状水素による高分子薄膜の分解除去とその反応機構 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • 原子状水素による高分子薄膜の分解除去とその反応機構 Domestic conference

    堀邊 英夫

    第60回高分子学会年次大会  2011 

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  • 化学構造を変えたポリマーの原子状水素による除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 化学構造を変えたポリマーの原子状水素による除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 化学構造を変えたポリマーの原子状水素による除去性 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • 加熱触媒体により生成した原子状水素を用いたナノインプリント用樹脂の除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたナノインプリント用樹脂の除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたナノインプリント用樹脂の除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたSU-8レジストの除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたSU-8レジストの除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたSU-8レジストの除去 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたPMMA系ポリマーの除去 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたPMMA系ポリマーの除去 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 加熱触媒体により生成した原子状水素を用いたPMMA系ポリマーの除去 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 加熱触媒体により生成した原子状水素によるレジスト材料の分解反応の律速因子の解明 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 加熱触媒体により生成した原子状水素によるレジスト材料の分解反応の律速因子の解明 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 加熱触媒体により生成した原子状水素によるレジスト材料の分解反応の律速因子の解明 Domestic conference

    堀邊 英夫

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

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  • 光架橋したSU-8レジストの原子状水素による高速除去 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • 光架橋したSU-8レジストの原子状水素による高速除去 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • 光架橋したSU-8レジストの原子状水素による高速除去 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • レジスト膜の機械的強度測定と蒸気二流体による剥離 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • レジスト膜の機械的強度測定と蒸気二流体による剥離 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • レジスト膜の機械的強度測定と蒸気二流体による剥離 Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • リアルタイム計測によるラジカルと固体表面相互反応プロセスの体系化 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • リアルタイム計測によるラジカルと固体表面相互反応プロセスの体系化 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • リアルタイム計測によるラジカルと固体表面相互反応プロセスの体系化 Domestic conference

    堀邊 英夫

    第8回Cat-CVD研究会  2011 

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  • ポリフッ化ビニリデンのテラヘルツ誘電スペクトルの結晶構造依存性 Domestic conference

    堀邊 英夫

    分子科学討論会2011(札幌)  2011 

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  • ポリフッ化ビニリデンのテラヘルツ誘電スペクトルの結晶構造依存性 Domestic conference

    堀邊 英夫

    分子科学討論会2011(札幌)  2011 

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  • ポリフッ化ビニリデンのテラヘルツ誘電スペクトルの結晶構造依存性 Domestic conference

    堀邊 英夫

    分子科学討論会2011(札幌)  2011 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(2) Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(2) Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析(2) Domestic conference

    堀邊 英夫

    第72回応用物理学会学術講演会講演予稿集  2011 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • プラズマプロセス中における有機薄膜表面反応の実時間・その場観察電子スピン共鳴(ESR)解析 Domestic conference

    堀邊 英夫

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

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  • PVDF/CB複合材料における融点以下でのPTC特性発現

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • ノボラック系ポジ型レジストにおける現像特性の現像温度依存性

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

  • ノボラック系ポジ型レジストにおける現像特性の現像温度依存性

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

  • ノボラック系ポジ型レジストにおける現像特性の現像温度依存性

    平成23年度応用物理学会北陸・信越支部学術講演会(金沢)  2011 

  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

  • ノボラック系ポジ型レジストにおける現像特性のプリベーク温度依存性

    第58 回応用物理学関係連合講演会 (神奈川)  2011 

  • ナノインプリント用樹脂の原子状水素による除去

    応用物理学会北陸・信越支部セミナー  2011 

  • ナノインプリント用樹脂の原子状水素による除去

    応用物理学会北陸・信越支部セミナー  2011 

  • ナノインプリント用樹脂の原子状水素による除去

    応用物理学会北陸・信越支部セミナー  2011 

  • イオン注入レジストの構造解析

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • イオン注入レジストの構造解析

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • イオン注入レジストの構造解析

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • イオン注入レジストの構造と原子状水素による除去性

    第8回Cat-CVD研究会  2011 

  • イオン注入レジストの構造と原子状水素による除去性

    第8回Cat-CVD研究会  2011 

  • イオン注入レジストの構造と原子状水素による除去性

    第8回Cat-CVD研究会  2011 

  • PVDF(ポリビニリデンフルオライド)の結晶構造の制御

    第280回電気材料技術懇談会(大阪)  2011 

  • PVDF(ポリビニリデンフルオライド)の結晶構造の制御

    第280回電気材料技術懇談会(大阪)  2011 

  • PVDF(ポリビニリデンフルオライド)の結晶構造の制御

    第280回電気材料技術懇談会(大阪)  2011 

  • PVDFフィルムの結晶構造と物性について

    第60回高分子学会年次大会  2011 

  • PVDFフィルムの結晶構造と物性について

    第60回高分子学会年次大会  2011 

  • PVDFフィルムの結晶構造と物性について

    第60回高分子学会年次大会  2011 

  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度

    第60回高分子討論会  2011 

  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度

    第60回高分子討論会  2011 

  • PVDFの結晶構造に及ばすキャスト時の溶媒蒸発速度

    第60回高分子討論会  2011 

  • PVDF/PMMAブレンドの結晶高次構造と誘電緩和挙動

    第60回高分子学会年次大会  2011 

  • PVDF/PMMAブレンドの結晶高次構造と誘電緩和挙動

    第60回高分子学会年次大会  2011 

  • PVDF/PMMAブレンドの結晶高次構造と誘電緩和挙動

    第60回高分子学会年次大会  2011 

  • PVDF/PMMAブレンドの溶融直後の熱処理による結晶構造制御

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/PMMAブレンドの溶融直後の熱処理による結晶構造制御

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/PMMAブレンドの溶融直後の熱処理による結晶構造制御

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/PMMAブレンドの溶媒キャストによるPVDFⅠ型の作製

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/PMMAブレンドの溶媒キャストによるPVDFⅠ型の作製

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/PMMAブレンドの溶媒キャストによるPVDFⅠ型の作製

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察

    第60回高分子討論会  2011 

  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察

    第60回高分子討論会  2011 

  • PVDF/Ni複合材料における融点以下でのPTC特性発現に対する考察

    第60回高分子討論会  2011 

  • PVDF/CNT複合材料の抵抗率ー温度特性に関する研究

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/CNT複合材料の抵抗率ー温度特性に関する研究

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/CNT複合材料の抵抗率ー温度特性に関する研究

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/CB複合材料における融点以下でのPTC特性発現

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • PVDF/CB複合材料における融点以下でのPTC特性発現

    第60回高分子学会北陸支部研究発表会(金沢)  2011 

  • 溶媒蒸発後のポリフッ化ビニリデンの結晶構造制御 Domestic conference

    堀邊 英夫

    第59回高分子学会年次大会  2010 

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  • イオン注入レジストの表面硬さと除去性との関係 Domestic conference

    堀邊 英夫

    成型加工シンポジア'10(兵庫)  2010 

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  • イオン注入レジストの表面硬さと除去性との関係 Domestic conference

    堀邊 英夫

    成型加工シンポジア'10(兵庫)  2010 

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  • イオン注入レジストの表面硬さと除去性との関係 Domestic conference

    堀邊 英夫

    成型加工シンポジア'10(兵庫)  2010 

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  • Xe2エキシマUV光によるレジスト除去 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • Xe2エキシマUV光によるレジスト除去 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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    Presentation type:Oral presentation (general)  

  • Xe2エキシマUV光によるレジスト除去 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明 Domestic conference

    堀邊 英夫

    第59回高分子討論会(北海道)  2010 

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  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明 Domestic conference

    堀邊 英夫

    第59回高分子討論会(北海道)  2010 

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  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明 Domestic conference

    堀邊 英夫

    第59回高分子討論会(北海道)  2010 

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  • PVDFの3種類の結晶構造の作製方法と物性について Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • PVDFの3種類の結晶構造の作製方法と物性について Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • PVDFの3種類の結晶構造の作製方法と物性について Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • PVDF/PMMAブレンド物の光透過性 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • PVDF/PMMAブレンド物の光透過性 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • PVDF/PMMAブレンド物の光透過性 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • PVDF/PMMAブレンド物におけるPVDF I型の電気特性 Domestic conference

    堀邊 英夫

    平成21年度 学生による研究発表会  2010 

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  • PVDF/PMMAブレンド物におけるPVDF I型の電気特性 Domestic conference

    堀邊 英夫

    平成21年度 学生による研究発表会  2010 

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  • PVDF/PMMAブレンド物におけるPVDF I型の電気特性 Domestic conference

    堀邊 英夫

    平成21年度 学生による研究発表会  2010 

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  • PVDF/PMMAブレンドの光透過性 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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    Presentation type:Oral presentation (general)  

  • PVDF/PMMAブレンドの光透過性 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • PVDF/PMMAブレンドの光透過性 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • 高濃度湿潤オゾンを用いたレジスト除去 Domestic conference

    堀邊 英夫

    成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • 高分子/Ni粒子複合材料における正の抵抗温度係数特性に影響する因子 Domestic conference

    堀邊 英夫

    第29回無機高分子研究討論会(東京)  2010 

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  • 過電流保護素子(永久ヒューズ)用材料 -導電性複合材料- Domestic conference

    堀邊 英夫

    第268回 電気材料技術懇談会  2010 

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  • 超高濃度オゾンガスによる高ドーズイオン注入レジストの低温除去 Domestic conference

    堀邊 英夫

    第57 回応用物理学関係連合講演会 18p-ZD-1  2010 

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  • 親水性/疎水性ポリマーのミキシングについて Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山),  2010 

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  • 環状カーボネート系溶剤によるレジスト除去 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • 環状カーボネート系溶剤によるレジスト除去 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • プリベーク温度を変えたノボラック系ポジ型レジストの現像特性 Domestic conference

    堀邊 英夫

    平成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • 高濃度湿潤オゾンを用いたレジスト除去 Domestic conference

    堀邊 英夫

    成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • 高濃度湿潤オゾンを用いたレジスト除去 Domestic conference

    堀邊 英夫

    成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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    Presentation type:Oral presentation (general)  

  • 高分子/Ni粒子複合材料における正の抵抗温度係数特性に影響する因子 Domestic conference

    堀邊 英夫

    第29回無機高分子研究討論会(東京)  2010 

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  • 高分子/Ni粒子複合材料における正の抵抗温度係数特性に影響する因子 Domestic conference

    堀邊 英夫

    第29回無機高分子研究討論会(東京)  2010 

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  • 過電流保護素子(永久ヒューズ)用材料 -導電性複合材料- Domestic conference

    堀邊 英夫

    第268回 電気材料技術懇談会  2010 

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  • 過電流保護素子(永久ヒューズ)用材料 -導電性複合材料- Domestic conference

    堀邊 英夫

    第268回 電気材料技術懇談会  2010 

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    Presentation type:Oral presentation (general)  

  • 超高濃度オゾンガスによる高ドーズイオン注入レジストの低温除去 Domestic conference

    堀邊 英夫

    第57 回応用物理学関係連合講演会 18p-ZD-1  2010 

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    Presentation type:Oral presentation (general)  

  • 超高濃度オゾンガスによる高ドーズイオン注入レジストの低温除去 Domestic conference

    堀邊 英夫

    第57 回応用物理学関係連合講演会 18p-ZD-1  2010 

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    Presentation type:Oral presentation (general)  

  • 親水性/疎水性ポリマーのミキシングについて Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山),  2010 

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    Presentation type:Oral presentation (general)  

  • 親水性/疎水性ポリマーのミキシングについて Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山),  2010 

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    Presentation type:Oral presentation (general)  

  • 環状カーボネート系溶剤によるレジスト除去 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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    Presentation type:Oral presentation (general)  

  • 環状カーボネート系溶剤によるレジスト除去 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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    Presentation type:Oral presentation (general)  

  • 環状カーボネート系溶剤によるレジスト除去 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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    Presentation type:Oral presentation (general)  

  • 環状カーボネート系溶剤によるレジスト除去 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • 溶媒蒸発後のポリフッ化ビニリデンの結晶構造制御 Domestic conference

    堀邊 英夫

    第59回高分子学会年次大会  2010 

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  • 溶媒蒸発後のポリフッ化ビニリデンの結晶構造制御 Domestic conference

    堀邊 英夫

    第59回高分子学会年次大会  2010 

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  • 導電性複合材料の抵抗率-温度特性について Domestic conference

    堀邊 英夫

    金沢大学大学院工学研究科 高分子研究会  2010 

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  • 導電性複合材料の抵抗率-温度特性について Domestic conference

    堀邊 英夫

    金沢大学大学院工学研究科 高分子研究会  2010 

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  • 導電性複合材料の抵抗率-温度特性について Domestic conference

    堀邊 英夫

    金沢大学大学院工学研究科 高分子研究会  2010 

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  • 和周波振動分光(SFG)によるポリフッ化ビニリデンの分極配向特性評価 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • 和周波振動分光(SFG)によるポリフッ化ビニリデンの分極配向特性評価 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • 和周波振動分光(SFG)によるポリフッ化ビニリデンの分極配向特性評価 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • 原子状水素を用いたレジスト除去技術 Domestic conference

    堀邊 英夫

    第7回超精密加工研究会  2010 

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  • 原子状水素を用いたレジスト除去技術 Domestic conference

    堀邊 英夫

    第7回超精密加工研究会  2010 

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  • 原子状水素を用いたレジスト除去技術 Domestic conference

    堀邊 英夫

    第7回超精密加工研究会  2010 

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  • 原子状水素によるSU-8レジストの除去 Domestic conference

    堀邊 英夫

    7thCat-CVD  2010 

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  • 原子状水素によるSU-8レジストの除去 Domestic conference

    堀邊 英夫

    7thCat-CVD  2010 

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  • 原子状水素によるSU-8レジストの除去 Domestic conference

    堀邊 英夫

    7thCat-CVD  2010 

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  • 原子状水素とレジストとの化学反応 Domestic conference

    堀邊 英夫

    第57回応用物理学関係連合講演会 17p-W-9  2010 

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  • 原子状水素とレジストとの化学反応 Domestic conference

    堀邊 英夫

    第57回応用物理学関係連合講演会 17p-W-9  2010 

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  • 原子状水素とレジストとの化学反応 Domestic conference

    堀邊 英夫

    第57回応用物理学関係連合講演会 17p-W-9  2010 

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  • 加熱触媒体を用いて生成した原子状水素によるポリマーの除去 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • 加熱触媒体を用いて生成した原子状水素によるポリマーの除去 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • 加熱触媒体を用いて生成した原子状水素によるポリマーの除去 Domestic conference

    堀邊 英夫

    高分子交流会  2010 

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  • 加熱触媒体によって生成した原子状水素を用いたポリマーの除去 Domestic conference

    堀邊 英夫

    平成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • 加熱触媒体によって生成した原子状水素を用いたポリマーの除去 Domestic conference

    堀邊 英夫

    平成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • 加熱触媒体によって生成した原子状水素を用いたポリマーの除去 Domestic conference

    堀邊 英夫

    平成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • リアルタイム電子スピン共鳴によるプラズマ誘起表面反応の解析 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • リアルタイム電子スピン共鳴によるプラズマ誘起表面反応の解析 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • リアルタイム電子スピン共鳴によるプラズマ誘起表面反応の解析 Domestic conference

    堀邊 英夫

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

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  • ポリエチレン/Ni複合材料の導電特性 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • ポリエチレン/Ni複合材料の導電特性 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • ポリエチレン/Ni複合材料の導電特性 Domestic conference

    堀邊 英夫

    第59回高分子学会北陸支部研究発表会(富山)  2010 

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  • ポリエチレン/Ni複合材料の導電特性 Domestic conference

    堀邊 英夫

    高分子交流会2010  2010 

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  • ポリエチレン/Ni複合材料の導電特性 Domestic conference

    堀邊 英夫

    高分子交流会2010  2010 

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  • ポリエチレン/Ni複合材料の導電特性 Domestic conference

    堀邊 英夫

    高分子交流会2010  2010 

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  • プリベーク温度を変えたノボラック系ポジ型レジストの現像特性 Domestic conference

    堀邊 英夫

    平成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • プリベーク温度を変えたノボラック系ポジ型レジストの現像特性 Domestic conference

    堀邊 英夫

    平成22年度応用物理学会北陸・信越支部学術講演会(石川)  2010 

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  • イオン注入レジストの表面硬さと除去性との関係

    成型加工シンポジア'10(兵庫)  2010 

  • イオン注入レジストの表面硬さと除去性との関係

    成型加工シンポジア'10(兵庫)  2010 

  • イオン注入レジストの表面硬さと除去性との関係

    成型加工シンポジア'10(兵庫)  2010 

  • Xe2エキシマUV光によるレジスト除去

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

  • Xe2エキシマUV光によるレジスト除去

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

  • Xe2エキシマUV光によるレジスト除去

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明

    第59回高分子討論会(北海道)  2010 

  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明

    第59回高分子討論会(北海道)  2010 

  • USAXS測定を用いたNi微粒子分散PEにおけるPTC特性と構造相関の解明

    第59回高分子討論会(北海道)  2010 

  • PVDFの3種類の結晶構造の作製方法と物性について

    第59回高分子学会北陸支部研究発表会(富山)  2010 

  • PVDFの3種類の結晶構造の作製方法と物性について

    第59回高分子学会北陸支部研究発表会(富山)  2010 

  • PVDFの3種類の結晶構造の作製方法と物性について

    第59回高分子学会北陸支部研究発表会(富山)  2010 

  • PVDF/PMMAブレンド物の光透過性

    高分子交流会  2010 

  • PVDF/PMMAブレンド物の光透過性

    高分子交流会  2010 

  • PVDF/PMMAブレンド物の光透過性

    高分子交流会  2010 

  • PVDF/PMMAブレンド物におけるPVDF I型の電気特性

    平成21年度 学生による研究発表会  2010 

  • PVDF/PMMAブレンド物におけるPVDF I型の電気特性

    平成21年度 学生による研究発表会  2010 

  • PVDF/PMMAブレンド物におけるPVDF I型の電気特性

    平成21年度 学生による研究発表会  2010 

  • PVDF/PMMAブレンドの光透過性

    第59回高分子学会北陸支部研究発表会(富山)  2010 

  • PVDF/PMMAブレンドの光透過性

    第59回高分子学会北陸支部研究発表会(富山)  2010 

  • PVDF/PMMAブレンドの光透過性

    第59回高分子学会北陸支部研究発表会(富山)  2010 

  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

  • PVDF/Ni複合材料における正の抵抗温度係数特性の発現メカニズム

    第71回応用物理学会学術講演会講演予稿集(長崎)  2010 

  • Measurement of adhesion force of resist to wafer by using SAICAS:Characteristics of lift-off of resist by steam-water mixed spray

    10th International symposium on Ultra Clean Processing of Semiconductor Surfaces  2010 

  • Measurement of adhesion force of resist to wafer by using SAICAS:Characteristics of lift-off of resist by steam-water mixed spray

    10th International symposium on Ultra Clean Processing of Semiconductor Surfaces  2010 

  • Measurement of adhesion force of resist to wafer by using SAICAS:Characteristics of lift-off of resist by steam-water mixed spray

    10th International symposium on Ultra Clean Processing of Semiconductor Surfaces  2010 

  • Ion-implanted Resist Removal Using Atomic Hydrogen

    HWCVD 2010  2010 

  • Ion-implanted Resist Removal Using Atomic Hydrogen

    HWCVD 2010  2010 

  • Ion-implanted Resist Removal Using Atomic Hydrogen

    HWCVD 2010  2010 

  • イオンビーム照射後のレジストとオゾンとの反応性について‐オゾンを用いた環境にやさしいレジスト除去技術‐ Domestic conference

    堀邊 英夫

    大阪大学 産業科学研究所 第9回 加速器量子ビーム実験室研究会  2009 

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  • イオンビーム照射後のレジストとオゾンとの反応性について‐オゾンを用いた環境にやさしいレジスト除去技術‐ Domestic conference

    堀邊 英夫

    大阪大学 産業科学研究所 第9回 加速器量子ビーム実験室研究会  2009 

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  • イオンビーム照射後のレジストとオゾンとの反応性について‐オゾンを用いた環境にやさしいレジスト除去技術‐ Domestic conference

    堀邊 英夫

    大阪大学 産業科学研究所 第9回 加速器量子ビーム実験室研究会  2009 

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  • 原子状水素を用いたイオン注入レジストの除去(2) Domestic conference

    堀邊 英夫

    応用物理学会 北陸・信越支部 学術講演会  2009 

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  • 原子状水素を用いたイオン注入レジストの除去(2) Domestic conference

    堀邊 英夫

    応用物理学会 北陸・信越支部 学術講演会  2009 

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  • 原子状水素を用いたイオン注入レジストの除去(2) Domestic conference

    堀邊 英夫

    応用物理学会 北陸・信越支部 学術講演会  2009 

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  • Novel plasmaless photoresist removal method in gas phase at room temperature

    215th ECS Meeting  2009 

  • イオンビーム照射後のレジストとオゾンとの反応性について‐オゾンを用いた環境にやさしいレジスト除去技術‐

    大阪大学 産業科学研究所 第9回 加速器量子ビーム実験室研究会  2009 

  • イオンビーム照射後のレジストとオゾンとの反応性について‐オゾンを用いた環境にやさしいレジスト除去技術‐

    大阪大学 産業科学研究所 第9回 加速器量子ビーム実験室研究会  2009 

  • イオンビーム照射後のレジストとオゾンとの反応性について‐オゾンを用いた環境にやさしいレジスト除去技術‐

    大阪大学 産業科学研究所 第9回 加速器量子ビーム実験室研究会  2009 

  • Novel plasmaless photoresist removal method in gas phase at room temperature

    215th ECS Meeting  2009 

  • Novel plasmaless photoresist removal method in gas phase at room temperature

    215th ECS Meeting  2009 

  • 湿潤オゾンによるイオン注入レジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • オゾンを用いた環境にやさしいレジスト除去 Domestic conference

    堀邊 英夫

    日本オゾン協会  2008 

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  • オゾンを用いた環境にやさしいレジスト除去 Domestic conference

    堀邊 英夫

    日本オゾン協会  2008 

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  • オゾンを用いた環境にやさしいレジスト除去 Domestic conference

    堀邊 英夫

    日本オゾン協会  2008 

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  • 高濃度オゾンガスアッシングにおけるレジストからの脱ガスの影響 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 高密度ポリエチレン/Ni複合材料における温度に対する導電特性 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 超高濃度オゾンガスによる高ドーズイオン注入レジスト除去 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 超高濃度オゾンガスによるレジスト除去 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 環境に優しい電子デバイス製造法-オゾンを用いた感光性樹脂除去技術- Domestic conference

    堀邊 英夫

    高分子学会石川地区研究会  2008 

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  • 溶媒蒸発後のポリフッ化ビニリデン(PVDF)の結晶構造制御 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 溶剤によるイオン注入されたレジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 湿潤オゾンによるイオン注入レジストの除去とその機構 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • ハーフトーンマスク用多層レジスト技術の開発―ネガ型(上層)/ポジ型(下層)レジスト― Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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    Presentation type:Oral presentation (general)  

  • 高濃度オゾンガスアッシングにおけるレジストからの脱ガスの影響 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

     More details

    Presentation type:Oral presentation (general)  

  • 高濃度オゾンガスアッシングにおけるレジストからの脱ガスの影響 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 高密度ポリエチレン/Ni複合材料における温度に対する導電特性 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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    Presentation type:Oral presentation (general)  

  • 高密度ポリエチレン/Ni複合材料における温度に対する導電特性 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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    Presentation type:Oral presentation (general)  

  • 超高濃度オゾンガスによる高ドーズイオン注入レジスト除去 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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    Presentation type:Oral presentation (general)  

  • 超高濃度オゾンガスによる高ドーズイオン注入レジスト除去 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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    Presentation type:Oral presentation (general)  

  • 超高濃度オゾンガスによるレジスト除去 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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    Presentation type:Oral presentation (general)  

  • 超高濃度オゾンガスによるレジスト除去 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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    Presentation type:Oral presentation (general)  

  • 環境に優しい電子デバイス製造法-オゾンを用いた感光性樹脂除去技術- Domestic conference

    堀邊 英夫

    高分子学会石川地区研究会  2008 

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    Presentation type:Oral presentation (general)  

  • 環境に優しい電子デバイス製造法-オゾンを用いた感光性樹脂除去技術- Domestic conference

    堀邊 英夫

    高分子学会石川地区研究会  2008 

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    Presentation type:Oral presentation (general)  

  • 溶媒蒸発後のポリフッ化ビニリデン(PVDF)の結晶構造制御 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

     More details

    Presentation type:Oral presentation (general)  

  • 溶媒蒸発後のポリフッ化ビニリデン(PVDF)の結晶構造制御 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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    Presentation type:Oral presentation (general)  

  • 溶剤によるイオン注入されたレジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 溶剤によるイオン注入されたレジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 湿潤オゾンによるイオン注入レジストの除去とその機構 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 湿潤オゾンによるイオン注入レジストの除去とその機構 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 湿潤オゾンによるイオン注入レジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 湿潤オゾンによるイオン注入レジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 樹脂/金属複合材料の導電特性 Domestic conference

    堀邊 英夫

    第27回無機高分子研究討論会  2008 

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  • 樹脂/金属複合材料の導電特性 Domestic conference

    堀邊 英夫

    第27回無機高分子研究討論会  2008 

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  • 樹脂/金属複合材料の導電特性 Domestic conference

    堀邊 英夫

    第27回無機高分子研究討論会  2008 

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  • 樹脂の分子量が異なるレジストの現像特性 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 樹脂の分子量が異なるレジストの現像特性 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 樹脂の分子量が異なるレジストの現像特性 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 原子状水素を用いたイオン注入レジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 原子状水素を用いたイオン注入レジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 原子状水素を用いたイオン注入レジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 原子状水素の濃度とレジスト除去速度との関係 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 原子状水素の濃度とレジスト除去速度との関係 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 原子状水素の濃度とレジスト除去速度との関係 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 原子状水素のフォトレジストとの気相反応 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 原子状水素のフォトレジストとの気相反応 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 原子状水素のフォトレジストとの気相反応 Domestic conference

    堀邊 英夫

    第55回応用物理学関係連合講演会(千葉)  2008 

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  • 原子状水素による化学構造の異なるレジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 原子状水素による化学構造の異なるレジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • 原子状水素による化学構造の異なるレジストの除去 Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • ポリフッ化ビニリデン(PVDF)/ポリメタクリル酸メチル(PMMA)ブレンドの熱処理後の結晶構造について Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • ポリフッ化ビニリデン(PVDF)/ポリメタクリル酸メチル(PMMA)ブレンドの熱処理後の結晶構造について Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • ポリフッ化ビニリデン(PVDF)/ポリメタクリル酸メチル(PMMA)ブレンドの熱処理後の結晶構造について Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • ハーフトーンマスク用多層レジスト技術の開発―ネガ型(上層)/ポジ型(下層)レジスト― Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • ハーフトーンマスク用多層レジスト技術の開発―ネガ型(上層)/ポジ型(下層)レジスト― Domestic conference

    堀邊 英夫

    平成20年度応用物理学会北陸・信越支部学術講演会  2008 

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  • Environmentally friendly resist removal technology using wet ozone

    Gwangju Institute of Science and Technology  2008 

  • オゾンを用いた環境にやさしいレジスト除去

    日本オゾン協会  2008 

  • オゾンを用いた環境にやさしいレジスト除去

    日本オゾン協会  2008 

  • オゾンを用いた環境にやさしいレジスト除去

    日本オゾン協会  2008 

  • Resist Removal and Evaluation of Si-Wafer by Atomic Hydrogen

    30th International Symposium on Dry Process  2008 

  • Resist Removal and Evaluation of Si-Wafer by Atomic Hydrogen

    30th International Symposium on Dry Process  2008 

  • Resist Removal and Evaluation of Si-Wafer by Atomic Hydrogen

    30th International Symposium on Dry Process  2008 

  • Environmentally friendly resist removal technology using wet ozone

    Gwangju Institute of Science and Technology  2008 

  • Environmentally friendly resist removal technology using wet ozone

    Gwangju Institute of Science and Technology  2008 

  • 水素ラジカルを用いたレジスト除去(3) Domestic conference

    堀邊 英夫

    第4回Cat-CVD研究会(北九州)  2007 

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  • ナノ・マイクロ材料の超高サイクル疲労信頼性試験装置の開発 Domestic conference

    堀邊 英夫

    日本機械学会,M&M2007,材料力学カンファレンス  2007 

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    Presentation type:Oral presentation (general)  

  • ナノ・マイクロ材料の超高サイクル疲労信頼性試験装置の開発 Domestic conference

    堀邊 英夫

    日本機械学会,M&M2007,材料力学カンファレンス  2007 

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    Presentation type:Oral presentation (general)  

  • ナノ・マイクロ材料の超高サイクル疲労信頼性試験装置の開発 Domestic conference

    堀邊 英夫

    日本機械学会,M&M2007,材料力学カンファレンス  2007 

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    Presentation type:Oral presentation (general)  

  • カーボンブラックを含む高分子複合材料の導電特性 Domestic conference

    堀邊 英夫

    第26回無機高分子研究討論会(高分子学会)  2007 

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  • カーボンブラックを含む高分子複合材料の導電特性 Domestic conference

    堀邊 英夫

    第26回無機高分子研究討論会(高分子学会)  2007 

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    Presentation type:Oral presentation (general)  

  • カーボンブラックを含む高分子複合材料の導電特性 Domestic conference

    堀邊 英夫

    第26回無機高分子研究討論会(高分子学会)  2007 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト剥離技術の開発 Domestic conference

    堀邊 英夫

    NEDO産業技術助成事業平成16年度最終報告会(東京)  2007 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト剥離技術の開発 Domestic conference

    堀邊 英夫

    NEDO産業技術助成事業平成16年度最終報告会(東京)  2007 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト剥離技術の開発 Domestic conference

    堀邊 英夫

    NEDO産業技術助成事業平成16年度最終報告会(東京)  2007 

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    Presentation type:Oral presentation (general)  

  • イオン注入されたレジストの溶剤による除去 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-02  2007 

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    Presentation type:Oral presentation (general)  

  • イオン注入されたレジストの溶剤による除去 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-02  2007 

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    Presentation type:Oral presentation (general)  

  • イオン注入されたレジストの溶剤による除去 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-02  2007 

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    Presentation type:Oral presentation (general)  

  • イオン注入されたレジストのオゾンによる除去 Domestic conference

    堀邊 英夫

    第68回応用物理学会学術講演会(北海道)  2007 

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    Presentation type:Oral presentation (general)  

  • イオン注入されたレジストのオゾンによる除去 Domestic conference

    堀邊 英夫

    第68回応用物理学会学術講演会(北海道)  2007 

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    Presentation type:Oral presentation (general)  

  • イオン注入されたレジストのオゾンによる除去 Domestic conference

    堀邊 英夫

    第68回応用物理学会学術講演会(北海道)  2007 

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    Presentation type:Oral presentation (general)  

  • 非線形吸収を利用した石英ガラスの品質評価 Domestic conference

    堀邊 英夫

    第68回応用物理学会学術講演会(北海道)  2007 

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    Presentation type:Oral presentation (general)  

  • 躍進する韓国から見た日本の半導体・液晶産業 Domestic conference

    堀邊 英夫

    立命館大学MOT大学院講義  2007 

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  • 環境負荷低減を目指したレジスト除去の開発 Domestic conference

    堀邊 英夫

    大阪大学・産業科学研究所・田川研究室 講演会,大阪  2007 

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  • 環境負荷低減を目指したレジスト除去の開発 Domestic conference

    堀邊 英夫

    大阪大学・産業科学研究所・田川研究室 講演会,大阪  2007 

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  • 環境に優しいレジスト除去技術 Domestic conference

    堀邊 英夫

    九州工業大学工学部 特別講演  2007 

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  • 環境にやさしい半導体製造技術 Domestic conference

    堀邊 英夫

    第6回金沢大学医学部公衆衛生学教室講演会  2007 

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  • 環境にやさしいレジスト除去技術 Domestic conference

    堀邊 英夫

    応用物理学会北陸・信越支部石川地区支部講演会  2007 

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  • 環境にやさしいモノを作ろう Domestic conference

    堀邊 英夫

    富山県立福岡高校への出前授業  2007 

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  • 溶媒蒸発後のポリフッ化ビニリデン(PVDF)フィルムの結晶構造 Domestic conference

    堀邊 英夫

    H19年度日本化学会北陸地区研究発表会  2007 

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    Presentation type:Oral presentation (general)  

  • 湿潤オゾンによるイオン注入レジスト除去とその除去性の検討 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-01  2007 

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  • レジスト材料・プロセスの評価技術 Domestic conference

    堀邊 英夫

    サイエンス&テクノロジー  2007 

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    Presentation type:Oral presentation (general)  

  • 非線形吸収を利用した石英ガラスの品質評価 Domestic conference

    堀邊 英夫

    第68回応用物理学会学術講演会(北海道)  2007 

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    Presentation type:Oral presentation (general)  

  • 非線形吸収を利用した石英ガラスの品質評価 Domestic conference

    堀邊 英夫

    第68回応用物理学会学術講演会(北海道)  2007 

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    Presentation type:Oral presentation (general)  

  • 躍進する韓国から見た日本の半導体・液晶産業 Domestic conference

    堀邊 英夫

    立命館大学MOT大学院講義  2007 

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    Presentation type:Oral presentation (general)  

  • 躍進する韓国から見た日本の半導体・液晶産業 Domestic conference

    堀邊 英夫

    立命館大学MOT大学院講義  2007 

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    Presentation type:Oral presentation (general)  

  • 環境負荷低減を目指したレジスト除去の開発 Domestic conference

    堀邊 英夫

    大阪大学・産業科学研究所・田川研究室 講演会,大阪  2007 

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  • 環境に優しいレジスト除去技術 Domestic conference

    堀邊 英夫

    九州工業大学工学部 特別講演  2007 

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  • 環境に優しいレジスト除去技術 Domestic conference

    堀邊 英夫

    九州工業大学工学部 特別講演  2007 

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    Presentation type:Oral presentation (general)  

  • 環境にやさしい半導体製造技術 Domestic conference

    堀邊 英夫

    第6回金沢大学医学部公衆衛生学教室講演会  2007 

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  • 環境にやさしい半導体製造技術 Domestic conference

    堀邊 英夫

    第6回金沢大学医学部公衆衛生学教室講演会  2007 

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  • 環境にやさしいレジスト除去技術 Domestic conference

    堀邊 英夫

    応用物理学会北陸・信越支部石川地区支部講演会  2007 

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    Presentation type:Oral presentation (general)  

  • 環境にやさしいレジスト除去技術 Domestic conference

    堀邊 英夫

    応用物理学会北陸・信越支部石川地区支部講演会  2007 

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  • 環境にやさしいモノを作ろう Domestic conference

    堀邊 英夫

    富山県立福岡高校への出前授業  2007 

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  • 環境にやさしいモノを作ろう Domestic conference

    堀邊 英夫

    富山県立福岡高校への出前授業  2007 

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    Presentation type:Oral presentation (general)  

  • 溶媒蒸発後のポリフッ化ビニリデン(PVDF)フィルムの結晶構造 Domestic conference

    堀邊 英夫

    H19年度日本化学会北陸地区研究発表会  2007 

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    Presentation type:Oral presentation (general)  

  • 溶媒蒸発後のポリフッ化ビニリデン(PVDF)フィルムの結晶構造 Domestic conference

    堀邊 英夫

    H19年度日本化学会北陸地区研究発表会  2007 

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    Presentation type:Oral presentation (general)  

  • 湿潤オゾンによるイオン注入レジスト除去とその除去性の検討 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-01  2007 

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  • 湿潤オゾンによるイオン注入レジスト除去とその除去性の検討 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-01  2007 

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    Presentation type:Oral presentation (general)  

  • 水素ラジカルを用いたレジスト除去(3) Domestic conference

    堀邊 英夫

    第4回Cat-CVD研究会(北九州)  2007 

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  • 水素ラジカルを用いたレジスト除去(3) Domestic conference

    堀邊 英夫

    第4回Cat-CVD研究会(北九州)  2007 

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  • 樹脂/カーボンブラック複合材料の導電特性とその配合 Domestic conference

    堀邊 英夫

    情報機構  2007 

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  • 樹脂/カーボンブラック複合材料の導電特性とその配合 Domestic conference

    堀邊 英夫

    情報機構  2007 

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  • 樹脂/カーボンブラック複合材料の導電特性とその配合 Domestic conference

    堀邊 英夫

    情報機構  2007 

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  • 原子状水素を用いた環境に優しいレジスト除去技術 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-03  2007 

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  • 原子状水素を用いた環境に優しいレジスト除去技術 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-03  2007 

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  • 原子状水素を用いた環境に優しいレジスト除去技術 Domestic conference

    堀邊 英夫

    2007年度応物学会北陸・信越支部学術講演会 2D-03  2007 

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  • 原子状水素によるレジスト除去 Domestic conference

    堀邊 英夫

    オルガテクノ2007有機テクノロジー展示会&国際会議(横浜)  2007 

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  • 原子状水素によるレジスト除去 Domestic conference

    堀邊 英夫

    オルガテクノ2007有機テクノロジー展示会&国際会議(横浜)  2007 

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    Presentation type:Oral presentation (general)  

  • 原子状水素によるレジスト除去 Domestic conference

    堀邊 英夫

    オルガテクノ2007有機テクノロジー展示会&国際会議(横浜)  2007 

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    Presentation type:Oral presentation (general)  

  • レジスト材料・プロセスの評価技術 Domestic conference

    堀邊 英夫

    サイエンス&テクノロジー  2007 

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    Presentation type:Oral presentation (general)  

  • レジスト材料・プロセスの評価技術 Domestic conference

    堀邊 英夫

    サイエンス&テクノロジー  2007 

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    Presentation type:Oral presentation (general)  

  • Control of Crystalline Structure and Diameter of PVDF Nanofiber by Electrospray Deposition

    2007 

  • ナノ・マイクロ材料の超高サイクル疲労信頼性試験装置の開発

    日本機械学会,M&M2007,材料力学カンファレンス  2007 

  • ナノ・マイクロ材料の超高サイクル疲労信頼性試験装置の開発

    日本機械学会,M&M2007,材料力学カンファレンス  2007 

  • ナノ・マイクロ材料の超高サイクル疲労信頼性試験装置の開発

    日本機械学会,M&M2007,材料力学カンファレンス  2007 

  • カーボンブラックを含む高分子複合材料の導電特性

    第26回無機高分子研究討論会(高分子学会)  2007 

  • カーボンブラックを含む高分子複合材料の導電特性

    第26回無機高分子研究討論会(高分子学会)  2007 

  • カーボンブラックを含む高分子複合材料の導電特性

    第26回無機高分子研究討論会(高分子学会)  2007 

  • オゾンを用いたレジスト剥離技術の開発

    NEDO産業技術助成事業平成16年度最終報告会(東京)  2007 

  • オゾンを用いたレジスト剥離技術の開発

    NEDO産業技術助成事業平成16年度最終報告会(東京)  2007 

  • オゾンを用いたレジスト剥離技術の開発

    NEDO産業技術助成事業平成16年度最終報告会(東京)  2007 

  • イオン注入されたレジストの溶剤による除去

    2007年度応物学会北陸・信越支部学術講演会 2D-02  2007 

  • イオン注入されたレジストの溶剤による除去

    2007年度応物学会北陸・信越支部学術講演会 2D-02  2007 

  • イオン注入されたレジストの溶剤による除去

    2007年度応物学会北陸・信越支部学術講演会 2D-02  2007 

  • イオン注入されたレジストのオゾンによる除去

    第68回応用物理学会学術講演会(北海道)  2007 

  • イオン注入されたレジストのオゾンによる除去

    第68回応用物理学会学術講演会(北海道)  2007 

  • イオン注入されたレジストのオゾンによる除去

    第68回応用物理学会学術講演会(北海道)  2007 

  • Control of Crystalline Structure and Diameter of PVDF Nanofiber by Electrospray Deposition

    2007 

  • Control of Crystalline Structure and Diameter of PVDF Nanofiber by Electrospray Deposition

    2007 

  • 水素ラジカルを用いたレジスト除去(2) Domestic conference

    堀邊 英夫

    第21回中国四国地区高分子若手研究会講演要旨集  2006 

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  • ハーフトーンマスク用多層レジスト技術の開発 Domestic conference

    堀邊 英夫

    オルガテクノ2006有機テクノロジー展示会&国際会議(横浜)  2006 

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    Presentation type:Oral presentation (general)  

  • ハーフトーンマスク用多層レジスト技術の開発 Domestic conference

    堀邊 英夫

    オルガテクノ2006有機テクノロジー展示会&国際会議(横浜)  2006 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト除去技術の開発 Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • オゾンを用いたレジスト除去技術の開発 Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト除去技術の開発 Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • オゾンを用いたレジスト剥離に関する研究開発 Domestic conference

    堀邊 英夫

    H16年度地域研究開発促進拠点支援事業育成試験成果説明会,高知  2006 

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  • オゾンを用いたレジスト剥離に関する研究開発 Domestic conference

    堀邊 英夫

    H16年度地域研究開発促進拠点支援事業育成試験成果説明会,高知  2006 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト剥離に関する研究開発 Domestic conference

    堀邊 英夫

    H16年度地域研究開発促進拠点支援事業育成試験成果説明会,高知  2006 

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  • オゾンを用いたレジスト剥離-環境負荷低減を目指して- Domestic conference

    堀邊 英夫

    産業技術総合研究所計測フロンティア研究部門 講演会,つくば  2006 

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  • オゾンを用いたレジスト剥離-環境負荷低減を目指して- Domestic conference

    堀邊 英夫

    産業技術総合研究所計測フロンティア研究部門 講演会,つくば  2006 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト剥離-環境負荷低減を目指して- Domestic conference

    堀邊 英夫

    四国6高専産学交流会 in TAKAMATSU,高松  2006 

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  • オゾンを用いたレジスト剥離-環境負荷低減を目指して- Domestic conference

    堀邊 英夫

    四国6高専産学交流会 in TAKAMATSU,高松  2006 

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  • オゾンを用いたレジスト剥離-環境負荷低減を目指して- Domestic conference

    堀邊 英夫

    産業技術総合研究所計測フロンティア研究部門 講演会,つくば  2006 

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  • オゾンを用いたレジスト剥離-環境負荷低減を目指して- Domestic conference

    堀邊 英夫

    四国6高専産学交流会 in TAKAMATSU,高松  2006 

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    Presentation type:Oral presentation (general)  

  • オゾンを用いたレジスト剥離 Domestic conference

    堀邊 英夫

    第3回高濃度オゾン研究会,東京  2006 

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  • オゾンを用いたレジスト剥離 Domestic conference

    堀邊 英夫

    第3回高濃度オゾン研究会,東京  2006 

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  • オゾンを用いたレジスト剥離 Domestic conference

    堀邊 英夫

    第3回高濃度オゾン研究会,東京  2006 

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  • オゾン/レーザーを用いたレジスト剥離 Domestic conference

    堀邊 英夫

    大阪工業大学・電子情報通信工学科 セミナー,大阪  2006 

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    Presentation type:Oral presentation (general)  

  • オゾン/レーザーを用いたレジスト剥離 Domestic conference

    堀邊 英夫

    大阪工業大学・電子情報通信工学科 セミナー,大阪  2006 

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    Presentation type:Oral presentation (general)  

  • オゾン/レーザーを用いたレジスト剥離 Domestic conference

    堀邊 英夫

    大阪工業大学・電子情報通信工学科 セミナー,大阪  2006 

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    Presentation type:Oral presentation (general)  

  • UVレーザーを用いたノボラック型レジストの剥離 Domestic conference

    堀邊 英夫

    フォトポリマーコンファレンス第22回, 千葉  2006 

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    Presentation type:Oral presentation (general)  

  • UVレーザーを用いたノボラック型レジストの剥離 Domestic conference

    堀邊 英夫

    フォトポリマーコンファレンス第22回, 千葉  2006 

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    Presentation type:Oral presentation (general)  

  • UVレーザーを用いたノボラック型レジストの剥離 Domestic conference

    堀邊 英夫

    フォトポリマーコンファレンス第22回, 千葉  2006 

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  • Design of Porous PVDF Nanofiber by Electrospray Deposition, Domestic conference

    堀邊 英夫

    平成18年度繊維学会年次大会(東京)  2006 

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  • Design of Porous PVDF Nanofiber by Electrospray Deposition, Domestic conference

    堀邊 英夫

    平成18年度繊維学会年次大会(東京)  2006 

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  • Design of Porous PVDF Nanofiber by Electrospray Deposition, Domestic conference

    堀邊 英夫

    平成18年度繊維学会年次大会(東京)  2006 

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  • 非線形吸収を利用した波長変換結晶CLBOの結晶品質の評価 Domestic conference

    堀邊 英夫

    レーザー学会学術講演会第26回年次大会(大宮)  2006 

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  • 環境負荷低減を目指したレジスト除去の開発 Domestic conference

    堀邊 英夫

    神戸大学・工学部・機械工学科・超精密加工講座 講演会,神戸  2006 

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  • ハーフトーンマスク用多層レジスト技術の開発 Domestic conference

    堀邊 英夫

    オルガテクノ2006有機テクノロジー展示会&国際会議(横浜)  2006 

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    Presentation type:Oral presentation (general)  

  • 非線形吸収を利用した波長変換結晶CLBOの結晶品質の評価 Domestic conference

    堀邊 英夫

    レーザー学会学術講演会第26回年次大会(大宮)  2006 

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    Presentation type:Oral presentation (general)  

  • 非線形吸収を利用した波長変換結晶CLBOの結晶品質の評価 Domestic conference

    堀邊 英夫

    レーザー学会学術講演会第26回年次大会(大宮)  2006 

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  • 環境負荷低減を目指したレジスト除去の開発 Domestic conference

    堀邊 英夫

    神戸大学・工学部・機械工学科・超精密加工講座 講演会,神戸  2006 

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    Presentation type:Oral presentation (general)  

  • 環境負荷低減を目指したレジスト除去の開発 Domestic conference

    堀邊 英夫

    神戸大学・工学部・機械工学科・超精密加工講座 講演会,神戸  2006 

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  • 水素ラジカルを用いたレジスト除去(2) Domestic conference

    堀邊 英夫

    第21回中国四国地区高分子若手研究会講演要旨集  2006 

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  • 水素ラジカルを用いたレジスト除去(2) Domestic conference

    堀邊 英夫

    第21回中国四国地区高分子若手研究会講演要旨集  2006 

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  • 水素ラジカルを用いたレジスト除去 Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • 水素ラジカルを用いたレジスト除去 Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • 水素ラジカルを用いたレジスト除去 Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • 樹脂/導電粒子からなる導電性複合材料の開発 Domestic conference

    堀邊 英夫

    第25回無機高分子研究討論会,東京  2006 

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  • 樹脂/導電粒子からなる導電性複合材料の開発 Domestic conference

    堀邊 英夫

    第25回無機高分子研究討論会,東京  2006 

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  • 樹脂/導電粒子からなる導電性複合材料の開発 Domestic conference

    堀邊 英夫

    第25回無機高分子研究討論会,東京  2006 

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  • レーザー光を用いたレジスト除去のメカニズム Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • レーザー光を用いたレジスト除去のメカニズム Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • レーザー光を用いたレジスト除去のメカニズム Domestic conference

    堀邊 英夫

    第67回応用物理学会学術講演会(滋賀)  2006 

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  • レーザーによるレジスト剥離 Domestic conference

    堀邊 英夫

    レーザー学会中国・四国支部平成18年度講演会,高知  2006