Updated on 2024/06/24

写真a

 
FUKUDA Tsuneo
 
Organization
Graduate School of Engineering Division of Physics and Electronics Associate Professor
School of Engineering Department of Physics and Electronics
Title
Associate Professor
Affiliation
Institute of Engineering
Affiliation campus
Sugimoto Campus

Position

  • Graduate School of Engineering Division of Physics and Electronics 

    Associate Professor  2022.04 - Now

  • School of Engineering Department of Physics and Electronics 

    Associate Professor  2022.04 - Now

Degree

  • Doctor of Engineering （ The University of Tokyo ）

Research Areas

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

Research Interests

  • Surface Science

Research subject summary

  • 半導体の表面構造と電子状態を制御し、新奇な機能を有した電子デバイスを提案する。 特に超高真空走査型トンネル顕微鏡を利用して原子レベルでのミクロな観点から研究を行っている。

Research Career

  • Controlling of semiconductor surface

    surface, control, device  Individual

    1990.04 - Now 

Professional Memberships

  • The Japan Society of Applied Physics

      Domestic

  • 表面真空学会

      Domestic

  • The Physical Society of Japan

      Domestic

Job Career (off-campus)

  • Nippon Telegraph and Telephone Co.

    1990 - 2001

Education

  • The University of Tokyo     Graduated/Completed

    - 1990

  • Tokyo University of Science     Graduated/Completed

    - 1984

Papers

  • STM observation of the initial Ag overlayer formation on the Ni(110) surface

    Mizuhara Aoi, Fukuda Tsuneo, Umezawa Kenji

    Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science   2023 ( 0 )   1P22   2023（ eISSN:24348589 ）

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    <p>Alloys between different kind of metals on surfaces often exhibit novel structures comparing to those in the bulk. For example, Ni and Au do not form alloys in the bulk form, but Au adsorbed on the topmost surface layer of Ni is known to induce surface two-dimensional alloying by replacing some of the Ni atoms on the surface with Au [1]. Since ultrathin films on metal surfaces will a unique structure, it will have high expectations for the discovery of a novel growth modes from the conventional thin film growth modes (FM, VW, SK) and for the development of new functionalities.</p><p></p><p>It is known that Ni-Ag, like Ni-Au, does not mix atoms in bulk form, and that Ag thin films on a Ni(111) surface grow in layer-by-layer and form a moire pattern due to the lattice mismatch [2], and that Ag(111) is formed on a Ni(100) surface has been confirmed in our laboratory. Although there have been many studies on metal heteroepitaxial growth by STM since the 1990s, there have been few observations of thin films of fcc metals at the atomic level, and the growth pattern of thin films, including interdiffusion and alloy formation, has not been clearly established at present. In this study, we studied the Ag-induced surface structures on the Ni(110) surface (Ni(110)-Ag) that has not been observed by ultra-high vacuum scanning tunneling microscopy (UHV-STM) and low-energy electron diffraction (LEED), depending on the growth and annealing conditions.</p><p></p><p>UHV-STM observation of the Ag-deposited surface on Ni(110) substrates at room temperature showed that Ag did not alloy with the substrate Ni atoms, but formed a reticulate structure. When deposited at 200°C, the reticular structure was aligned to form a stripe structure along the [001] direction. A 10×10 nm<sup>2</sup> STM image (Fig. 1) of the RT deposition shows that three regions coexist. Region A is a bright region with a periodic protrusion in the [001] direction, which corresponds to the substrate atomic rows. Therefore, Ag atoms are considered to grow epitaxially in the [11-0] direction to form bright bands in the [001] direction. They occasionally form wavy structures with a 3× periodicity in the [11-0] direction. Region B is noisy, where Ag atoms do not match the periodicity of the substrate in the [11-0] row and they are considered to fluctuate in the row. Region C is a trough structure with a depression of about 120 pm and is considered to be a region where no Ag atoms exist.</p><p></p><p>LEED observation showed one-tenth of the satellites spots near integer-order spots of the Ni(110) 1×1 structure in the [11-0] direction, indicating that epitaxially grown Ag atoms have a super structure along the [11-0] row.</p><p></p><p>References</p><p>[1] L. Pleth Nielsen <i>et al.</i>, Phys. Rev. Lett. 74, 1159 (1995).</p><p>[2] S. Nakanishi <i>et al.</i>, Phys. Rev. B 62, 13136 (2000).</p>

    DOI： 10.14886/jvss.2023.0_1p22

  • Effects of hydrogen and SiO<inf>2</inf>buffer layer insertion on electrical properties of low-resistive indium tin oxide films formed on polyethylene naphthalate films

    Fukuda T.

    Japanese Journal of Applied Physics   61 ( 10 )   2022.10（ ISSN:00214922 ）

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  • Erratum: First-principles Study of Si-embedded Ni(100) Surfaces

    Fukuda Tsuneo, Kishida Ippei

    e-Journal of Surface Science and Nanotechnology   20 ( 1 )   58 - 58   2022.02（ eISSN:13480391 ）

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    <p>The affiliation of the first author (T. F.) was wrong in the original article. The correct affiliation is as follows: <i>Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University, Osaka 558-8585, Japan</i></p>

    DOI： 10.1380/ejssnt.2022-005

    CiNii Article

  • First-principles Study of Si-embedded Ni(100) Surfaces

    Fukuda Tsuneo, Kishida Ippei

    e-Journal of Surface Science and Nanotechnology   19 ( 0 )   112 - 118   2021.11（ eISSN:13480391 ）

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    <p>First-principles total-energy calculations were applied to 0 to 1 ML of silicon-embedded Ni(100) surfaces in the outmost layer within a 2 × 4 unit cell. Up to a half monolayer of embedded silicon, the surface energy decreased monotonically with increasing the number of embedded silicon, and the lowest energy structure was a √2 × √2-R45° [or c(2 × 2)] structure with diagonally aligned embedded silicon of 0.5 ML. Beyond the half monolayer, the surface energy increased with increasing the number of embedded silicon. The energy of the silicon-embedded structure in the outmost layer of the Ni(100) surface was compared with silicon embedded in the second layer and silicon adsorbed on the Ni(100) surface. Both configurations gave higher energies, which shows the robustness of the √2 × √2-R45° structure on the Ni(100) surface. The present results are in perfect agreement with our recent report [T. Fukuda <i>et al.</i>, Jpn. J. Appl. Phys. <b>59</b>, 065501 (2020)].</p>

    DOI： 10.1380/ejssnt.2021.112

    CiNii Article

  • Annual Meeting after Corona Pandemic

    FUKUDA Tsuneo

    Vacuum and Surface Science   64 ( 8 )   351 - 351   2021.08（ ISSN:24335835 ） （ eISSN:24335843 ）

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  • Total reflection X-ray fluorescence analysis with a glass substrate treated with a He atmospheric pressure plasma jet

    Kouichi Tsuji, Tsugufumi Matsuyama, Tsuneo Fukuda, Soichiro Shima, Mayuko Toba, Jun-Seok Oh, Tatsuru Shirafuji

    Journal of Analytical Atomic Spectrometry   36 ( 9 )   1873 - 1878   2021（ ISSN:0267-9477 ） （ eISSN:1364-5544 ）

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    Publishing type：Research paper (scientific journal)  

    <p>A glass substrate treated with a He atmospheric pressure plasma jet gave a film-like residue from a small droplet of the red wine. This technique was effective in decreasing the matrix effect for TXRF analysis of low-Z elements.</p>

    DOI： 10.1039/d1ja00164g

  • Formation of two-dimensional silicide on Ni(100) surface

    Fukuda T.

    Japanese Journal of Applied Physics   59 ( 6 )   2020.06（ ISSN:00214922 ）

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  • An Examination of the Pumpdown Equation in the Low and Medium Vacuum Regions

    YOKOGAWA Keiichi, SETO Kohei, FUKUDA Tsuneo

    Vacuum and Surface Science   61 ( 5 )   292 - 295   2018.05（ ISSN:24335835 ） （ eISSN:24335843 ）

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    Publishing type：Research paper (scientific journal)  

    <p>We studied a pumpdown curve in the low and medium vacuum regimes for a conductance-limited pumping. Senda [H. Senda, SEI Technical Review <b>176</b>, 1 (2010).] predicted that the exponential decrease of the chamber pressure, followed by the reciprocal behavior with time near the lower limit of the viscous flow. He proposed a pressure boundary between the exponential decrease and the reciprocal decrease as a “Bifurcation pressure”. We experimentally found bifurcation pressures and they quantitatively compered with the theoretical estimation. The result of our experiment agreed fairly well with values that had been obtained by the theoretical calculation.</p>

    DOI： 10.1380/vss.61.292

    CiNii Article

  • First-Principles Study of Silicon-Embedded Ni(110) Reviewed

    Fukuda T., Kishida I.

    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY   15   96 - 101   2017.10（ ISSN:1348-0391 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    DOI： 10.1380/ejssnt.2017.96

  • Initial surface silicidation on Ni(110) Reviewed

    T. Fukuda, I. Kishida, K. Umezawa

    Surface Science   659   1 - 4   2017.05（ ISSN:0039-6028 ）

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    Initial silicide formation on a Ni(110) surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Less than 0.5 ML of Si deposition initiated a Si-Ni mixed layer by displacing substrate Ni, and dark sites were formed in the STM images. A 0.5 ML-Si deposited surface showed that Si and Ni were alternately aligned in a close-packed [11¯0] row whereas Si pairs aligned along the [001] direction forming p(1×2), obliquely aligned forming c(2×2), or even straightly-and-obliquely aligned forming c(4×2) superstructures. A first-principles total energy calculation showed that the p(1×2) and c(4×2) structures had almost the same energy while the c(2×2) structure gave 13 meV/1×1 higher energy. Because a Si-Si bond in the close-packed [11¯0] row is energetically unfavorable, Si deposition of more than 0.5 ML did not further replace the substrate Ni, but silicide islands were nucleated along with a trench structure.

    DOI： 10.1016/j.susc.2017.01.003

  • Structual correlation of two-dimensional Cu-Ni alloys. Reviewed

    Saito Takeru, Fukuda Tsuneo

    The Surface Science Society of Japan, Abstract of annual meeting of the Surface Science of Japan   37 ( 0 )   2017

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.14886/sssj2008.37.0_124

    CiNii Article

  • Pumpdown equation in low and medium vacuum regions. Reviewed

    Yokogawa Keiichi, Seto Kohei, Fukuda Tsuneo

    The Surface Science Society of Japan, Abstract of annual meeting of the Surface Science of Japan   37 ( 0 )   2017

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.14886/sssj2008.37.0_266

    CiNii Article

  • Pumpdown equation in low and medium vacuum regions. Reviewed

    Yokogawa Keiichi, Seto Kohei, Fukuda Tsuneo

    Abstract of annual meeting of the Surface Science of Japan   37 ( 0 )   266   2017

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    通常、排気方程式は一定の実効排気速度を仮定して計算されるが、粘性流領域ではコンダクタンスが配管出入り口の平均圧力に比例するため、真空容器と真空ポンプとの間のコンダクタンスが小さい場合 、容器内の圧力は指数関数的には変化せず、ある圧力から時間の逆数で圧力が低下する領域がある。配管のコンダクタンスの圧力依存性を含んだ排気方程式の解析解と実験で得られた排気曲線を比較した結果、比較的良い一致を示した。

    DOI： 10.14886/sssj2008.37.0_266

    CiNii Article

  • Structual correlation of two-dimensional Cu-Ni alloys. Reviewed

    Saito Takeru, Fukuda Tsuneo

    Abstract of annual meeting of the Surface Science of Japan   37 ( 0 )   124   2017

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    CuとNiはバルクで全率固溶体を作るが、混合エネルギーが正であるため、相分離することが予想されている。<br> 本発表では、Ni(110)表面上にCu-Niの２次元合金を作製し、STMで構造相関を測定したところ、[1 -1 0]方向にのみ正の相関があることを見出し、Ising模型と比較することによって相互作用エネルギーを導出した。

    DOI： 10.14886/sssj2008.37.0_124

    CiNii Article

  • First-Principles Study of Silicon-Embedded Ni(110)

    Fukuda T., Kishida I.

    e-Journal of Surface Science and Nanotechnology   15 ( 0 )   96 - 101   2017（ ISSN:1348-0391 ） （ eISSN:13480391 ）

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    <p>First-principles total energy calculations were performed to investigate stable atomic structures for the displacive adsorption of silicon on the Ni(110) surface. Gibbs free energies were compared for 0-4 silicon atoms embedded into the top layer in a 2×2 unit for the Ni(110) surface. When a half monolayer of Si was embedded, the p(1×2) structure had the lowest energy, and the c(2×2) structure had only 13 meV/1×1 higher energy than the p(1×2) structure. By extending to a 4×2 unit, the c(4×2) structures had almost the same energy with the p(1×2) structure. Alternating Si-Ni chains along the close-packed [1-10] row play an essential role to stabilize these structures. Si and Ni are alternatively aligned in separate [1-10] rows forming a p(2×1) structure, which had 276 meV/1 1 higher energy than the p(1×2) structure. For the p(2×1) structure, unique one-dimensional electronic bands derived by the Si-3<i>s</i> states were formed along the [1-10] direction. [DOI: 10.1380/ejssnt.2017.96]</p>

    DOI： 10.1380/ejssnt.2017.96

    CiNii Article

  • Initial Silicidation on Ni surfaces studied by Scanning Tunneling Microscopy Reviewed

    Fukuda Tsuneo, Kishida Ippei, Umezawa kenji

    The Surface Science Society of Japan, Abstract of annual meeting of the Surface Science of Japan   36 ( 0 )   2016

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.14886/sssj2008.36.0_411

    CiNii Article

  • ITO thin film formation on flexible plastic films by RF magnetron sputtering Reviewed

    Kamada Yuya, Maeda Takuya, Fukuda Tsuneo

    The Surface Science Society of Japan, Abstract of annual meeting of the Surface Science of Japan   36 ( 0 )   2016

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.14886/sssj2008.36.0_132

    CiNii Article

  • ITO thin film formation on flexible plastic films by RF magnetron sputtering Reviewed

    Kamada Yuya, Maeda Takuya, Fukuda Tsuneo

    Abstract of annual meeting of the Surface Science of Japan   36 ( 0 )   132   2016

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    フレキシブルエレクトロニクスに向けてプラスチック基板への電極材料の製膜は重要な要素技術である。本発表では、PEN（=Polyethylene naphthalate)基板上へのITO薄膜の製膜条件を最適化し、膜厚100 nmで<10<sup>-3</sup> Ohm cmの低抵抗ITO薄膜を形成できたので報告する。

    DOI： 10.14886/sssj2008.36.0_132

    CiNii Article

  • Initial Silicidation on Ni surfaces studied by Scanning Tunneling Microscopy Reviewed

    Fukuda Tsuneo, Kishida Ippei, Umezawa kenji

    Abstract of annual meeting of the Surface Science of Japan   36 ( 0 )   411   2016

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    Ni(111)、(100)、(110)表面でのSi吸着後形成されるシリサイド構造を超高真空下でSTM観察を行った。Ni(111)表面では、Siが1/3ML吸着したroot-3構造が安定構造であり、Ni(100)表面では1/2MLのroot-2構造、Ni(110)表面では1/2MLのp(1x2)、c(2x2)、c(4x2)構造が共存することが分かった。

    DOI： 10.14886/sssj2008.36.0_411

    CiNii Article

  • Book Review Reviewed

    FUKUDA Tsuneo

    Osaka City University, OCU journal of higher education studies   13 ( 1 )   71 - 72   2015.10（ ISSN:13492152 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Single Work  

    DOI： 10.24544/ocu.20171218-067

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  • Low and Medium Vacuum: Fundamentals and Applications Reviewed

    FUKUDA Tsuneo

    The Vacuum Society of Japan, Shinku   58 ( 9 )   325 - 329   2015（ ISSN:1882-2398 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Single Work  

      Fundamental aspects for low- and medium-vacuum regions are described. Some long-standing problems, such as slip flow, pumpdown curve for viscous flow region, and vacuum drying are presented. The importance of slip velocity at a pipe wall for the Knudsen number between 0.01 and 0.1 is enlightened. A numerical result for a pumpdown curve with a pressure dependent conductance in the viscous flow regime was presented with an emphasis on a <i>t</i><sup>−1</sup> pressure decrease. In addition, vacuum drying process is modeled with a water containing capillary and pressure dependent mass flow is discussed.<br>

    DOI： 10.3131/jvsj2.58.325

    CiNii Article

  • Stranski–Krastanow growth of copper overlayers on the Ni(110) surface Reviewed

    Surface Science   606   1221 - 1226   2012.09

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

  • Stranski–Krastanow growth of copper overlayers on the Ni(110) surface Reviewed

    Surface Science   606   1221 - 1226   2012.09

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  • Stranski-Krastanow growth of copper overlayers on the Ni(110) surface Reviewed

    Fukuda T., Umezawa K., Nakayama H.

    SURFACE SCIENCE   606 ( 15-16 )   1221 - 1226   2012.08（ ISSN:0039-6028 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.susc.2012.03.024

  • Stranski-Krastanow growth of copper overlayers on the Ni(110) surface Reviewed

    T. Fukuda, K. Umezawa, H. Nakayama

    Surface Science   606 ( 15-16 )   1221 - 1226   2012.08（ ISSN:0039-6028 ）

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    Cu overlayer formation on the Ni(110) surface was studied using scanning tunneling microscopy (STM) in an ultrahigh vacuum. Room-temperature deposition of Cu onto a Ni(110) surface exhibited layer-by-layer growth up to 6 monolayers (MLs), followed by three-dimensional island formation, i.e., the Cu overlayer growth on the Ni(110) surface is classified as Stranski-Krastanow growth. At the initial growth stage, anisotropic two-dimensional islands were elongated in the close-packed [11̄0] direction. The nucleation of the second layer was strongly affected by the morphology of the first layer, and the second-layer islands also extended in the [11̄0] direction. The third and further layers grew two-dimensionally. Detailed STM images showed mosaic features due to Cu and Ni alloying. Three-dimensional islands were observed for Cu deposition beyond 6 ML. The (110)-oriented top surface of the islands had stripes along the [001] direction. In addition, bumps extending in the [11̄0] direction were formed on these island surfaces, indicating threading dislocation through the island to relieve the compressive stress of the overlayers. An atomic model of the bump compatible with the STM image was proposed. © 2012 Elsevier B.V. All rights reserved.

    DOI： 10.1016/j.susc.2012.03.024

  • Initial growth stage of silicon on the Ni(111) surface Reviewed

    Takami Yuta, Fukuda Tsuneo, Nakayama Hiroshi

    The Surface Science Society of Japan, Abstract of annual meeting of the Surface Science of Japan   30 ( 0 )   188 - 188   2010

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.14886/sssj2008.30.0.188.0

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  • Initial growth stage of silicon on the Ni(111) surface Reviewed

    Takami Yuta, Fukuda Tsuneo, Nakayama Hiroshi

    Abstract of annual meeting of the Surface Science of Japan   30 ( 0 )   188 - 188   2010

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    半導体上の金属吸着の研究例は非常に多いが、金属上の半導体や絶縁体形成初期に関する研究は多くはない。本研究では、ニッケル(111)表面に、典型的な半導体であるシリコンを吸着させたときの初期吸着挙動を超高真空STMを用いて調べた。室温吸着したシリコンは表面原子とは反応せず、孤立して、もしくはデンドリマー状に集合し、特定の超構造をとらないことが分かった。

    DOI： 10.14886/sssj2008.30.0.188.0

    CiNii Article

  • First principles study of Cu-embedded Ni(110) surfaces

    e-Journal of Surface Science and Nanotechnology   7   681 - 687   2009.11

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  • First principles study of Cu-embedded Ni(110) surfaces Reviewed

    e-Journal of Surface Science and Nanotechnology   7   681 - 687   2009.11

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    Publishing type：Research paper (scientific journal)   Kind of work：Single Work  

  • First Principles Study of Cu-Embedded Ni(110) Surfaces

    Fukuda T., Nakayama H., Kishida I., Umezawa K.

    e-Journal of Surface Science and Nanotechnology   7 ( 0 )   681 - 687   2009（ eISSN:13480391 ）

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    Publishing type：Research paper (scientific journal)  

    The atomic geometries and electronic band structures of Cu-embedded Ni(110) surfaces were studied theoretically. First principles calculation with spin-resolved local density functional theory was applied to the Ni(110) surface, and one to four Cu-embedded Ni(110) surfaces in the 2×2 surface unit cell. The optimized structures for the Ni(110) surface showed that interlayer spacing between the first and the second layer shrunk 11.1% of the bulk distance, but the second and third layer spacing expanded by 2.9% in agreement with previous studies. For the Cu-embedded surfaces, embedded Cu atoms are 11-14 pm higher than the top Ni atoms, which is about four times larger than the difference of the atomic radii. The detailed band structures and corresponding local density of states (LDOS) were calculated. At the embedded Cu atom sites, the surface LDOS near the Fermi level was reduced in agreement with previous scanning tunneling microscopy observation. In addition, by increasing the number of Cu atoms in the top layer, magnetic moments were decreased near the surface regions. [DOI: 10.1380/ejssnt.2009.681]

    DOI： 10.1380/ejssnt.2009.681

    CiNii Article

  • Mixed layer formation on the copper-deposited Ni(110) surface Reviewed

    Fukuda T., Iwamoto K., Nakayama H., Umezawa K.

    PHYSICAL REVIEW B   78 ( 19 )   2008.11（ ISSN:1098-0121 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1103/PhysRevB.78.195422

  • Mixed layer formation on the copper-deposited Ni(110) surface Reviewed

    T. Fukuda, K. Iwamoto, H. Nakayama, K. Umezawa

    PHYSICAL REVIEW B   78 ( 19 )   2008.11（ ISSN:1098-0121 ）

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    We studied initial Cu overlayer formation on the Ni(110) surface by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Initially, deposited Cu displaces the top Ni layer, forming two-dimensional Cu-Ni alloy on the substrate. The Cu atom embedded into the top layer was depressed in the STM image. The depression due to the lack of Ni 3d-derived surface local density of states was confirmed by the first-principles calculation. Ni atoms squeezed out from the top substrate layer agglomerated in the anisotropic Ni island along the close-packed (1 (1) over bar0) direction. Further Cu deposition resulted in a Cu-Ni mixed island. Quantitative measurement of the Cu fraction on the substrate showed that 0.71 +/- 0.04 of deposited Cu was embedded in the top Ni layer, whereas significant Cu enrichment was seen on the island.

    DOI： 10.1103/PhysRevB.78.195422

  • Report on the 44th Basic Vacuum Technology Seminar Reviewed

    FUKUDA Tsuneo

    The Vacuum Society of Japan, Shinku   51 ( 10 )   682 - 683   2008.10（ ISSN:18822398 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Single Work  

    DOI： 10.3131/jvsj2.51.682

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  • Mixed layer formation of copper overlayers on Ni(110) surface Reviewed

    Fukuda T., Iwamoto K., Fujimoto Y., Umezawa K., Nakayama H.

    APPLIED SURFACE SCIENCE   254 ( 23 )   7693 - 7696   2008.09（ ISSN:0169-4332 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.apsusc.2008.01.143

  • Mixed layer formation of copper overlayers on Ni(110) surface Reviewed

    T. Fukuda, K. Iwamoto, Y. Fujimoto, K. Umezawa, H. Nakayama

    APPLIED SURFACE SCIENCE   254 ( 23 )   7693 - 7696   2008.09（ ISSN:0169-4332 ）

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    Copper overlayer formation on the Ni(1 1 0) surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Atom-resolved STM images showed that initially deposited Cu is replaced with surface Ni atoms forming atom-size depressions on the Ni(1 1 0) terraces and a Ni-rich quasi-one-dimensional island along the [1 (1) over bar 0] direction. Further Cu deposition yields a mosaic structure on the islands, indicating Cu/Ni mixed layer formation. From the quantitative measurement of the Cu/Ni ratio on the substrate and the islands, impinging Cu will be replaced with surface Ni whereas expelled Ni and directly impinging Cu to the island form the mixed island. The number of Cu atoms in the islands, however, more than the directly impinging Cu, indicate significant Cu/Ni replacement at the periphery of the island. (C) 2008 Elsevier B.V. All rights reserved.

    DOI： 10.1016/j.apsusc.2008.01.143

  • 24aTD-8 Growth and mixing of Cu overalyer on the Ni(110) surface Reviewed

    Fukuda T., Iwamoto K., Umezawa K., Nakayama H.

    The Physical Society of Japan (JPS), Meeting abstracts of the Physical Society of Japan   63 ( 1 )   2008.02（ ISSN:13428349 ）

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  • 24aTD-8 Ni(110)表面上のCuの成長と原子混合(表面界面ダイナミクス,表面界面構造,領域9,表面・界面,結晶成長) Reviewed

    福田 常男, 岩元 央一, 梅澤 憲司, 中山 弘

    一般社団法人日本物理学会 日本物理学会講演概要集   63 ( 1 )   2008.02（ ISSN:1342-8349 ）

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    Publishing type：Research paper (scientific journal)  

  • 24aTD-8 Ni(110)表面上のCuの成長と原子混合(表面界面ダイナミクス,表面界面構造,領域9,表面・界面,結晶成長) Reviewed

    福田 常男, 岩元 央一, 梅澤 憲司, 中山 弘

    一般社団法人日本物理学会 日本物理学会講演概要集   63 ( 1 )   2008.02（ ISSN:1342-8349 ）

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    Publishing type：Research paper (scientific journal)  

  • 24aTD-8 Growth and mixing of Cu overalyer on the Ni(110) surface Reviewed

    Fukuda T., Iwamoto K., Umezawa K., Nakayama H.

    The Physical Society of Japan, Meeting Abstracts of the Physical Society of Japan   63 ( 0 )   2008

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.11316/jpsgaiyo.63.1.4.0_872_4

    CiNii Article

  • Report on the 44th Basic Vacuum Technology Seminar

    FUKUDA Tsuneo

    Journal of the Vacuum Society of Japan   51 ( 10 )   682 - 683   2008（ ISSN:18822398 ） （ eISSN:18824749 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.3131/jvsj2.51.682

    CiNii Article

  • Scanning tunneling microscopy study on initial stage of atomic hydrogen adsorption on the Si(111) 7 x 7 surface Reviewed

    Fukuda T., Nakatani J., Nakayama H.

    SURFACE SCIENCE   600 ( 12 )   2443 - 2448   2006.06（ ISSN:0039-6028 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.susc.2006.03.035

  • Scanning tunneling microscopy study on initial stage of atomic hydrogen adsorption on the Si(111) 7 x 7 surface Reviewed

    T. Fukuda, J. Nakatani, H. Nakayama

    SURFACE SCIENCE   600 ( 12 )   2443 - 2448   2006.06（ ISSN:0039-6028 ）

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    Publishing type：Research paper (scientific journal)  

    Initial hydrogen adsorption on the Si(111) 7 x 7 surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Room temperature adsorbed hydrogen on the adatom in the 7 x 7 reconstruction led to depression of adatoms in the STM images. The hydrogen uptake curve at the adatom site as a function of hydrogen exposure time was well represented by Langmuir adsorption. No preferential adsorption was seen among four inequivalent adatoms in the 7 x 7 reconstruction. Adsorption of the adjacent center and corner adatoms respectively showed similar to 10% higher adsorption. Even though the number of reacted adatoms in the half unit of the 7 x 7 reconstruction was statistically random, the number of reacted adatoms in the nearest neighbor half unit was enhanced as the number of reacted sites increased in the half unit. (c) 2006 Elsevier B.V. All rights reserved.

    DOI： 10.1016/j.susc.2006.03.035

  • Transition from Active to Passive Oxidation on Si(111)7×7 Surface Reviewed

    SUZUKI Yoshikazu, FUKUDA Tsuneo, NAKAYAMA Hiroshi

    The Vacuum Society of Japan, Journal of the Vacuum Society of Japan   48 ( 5 )   350 - 352   2005.05（ ISSN:05598516 ）

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    Publishing type：Research paper (scientific journal)  

    We performed in situ scanning tunneling microscopy observation of oxygen reaction on the Si(111)7×7 surface at high temperatures. In spite of passive oxidation regime, we found that voids having the depth just one bilayer were formed at the initial stage of reaction. We found that the number density of the void was well represented by power laws. We applied the two-dimensional nucleation theory to this void formation and found that the critical nuclei were <i>i</i> = 1.46(647 K) and <i>i</i> = 14.7(751 K). We found the transition from active to passive oxidation with constant substrate temperature and oxygen exposure rate. The transition was quantitatively reproduced by the numerical simulations.

    DOI： 10.3131/jvsj.48.350

    CiNii Article

    J-GLOBAL

  • Transition from Active to Passive Oxidation on Si(111)7*7 Surface

    SUZUKI Yoshikazu, FUKUDA Tsuneo, NAKAYAMA Hiroshi

    Shinku   48 ( 5 )   350 - 352   2005（ ISSN:05598516 ） （ eISSN:18809413 ）

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    We performed in situ scanning tunneling microscopy observation of oxygen reaction on the Si(111)7×7 surface at high temperatures. In spite of passive oxidation regime, we found that voids having the depth just one bilayer were formed at the initial stage of reaction. We found that the number density of the void was well represented by power laws. We applied the two-dimensional nucleation theory to this void formation and found that the critical nuclei were <i>i</i> = 1.46(647 K) and <i>i</i> = 14.7(751 K). We found the transition from active to passive oxidation with constant substrate temperature and oxygen exposure rate. The transition was quantitatively reproduced by the numerical simulations.

    DOI： 10.3131/jvsj.48.350

    CiNii Article

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Books and Other Publications

  • New Practical Vacuum Technology

    （ Role： Joint author）

    2019.02 

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    Total pages：1084   Responsible for pages：37-80, 466-473  

  • 真空科学ハンドブック

    荒川一郎ほか（ Role： Contributor）

    コロナ社  2017.03 

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    Total pages：800   Responsible for pages：20  

  • 「わかりやすい真空技術（第3版）」

    （真空技術基礎講習会運営委員会）（ Role： Joint author）

    日刊工業新聞社  2010.05  （ ISBN:9784526064258 ）

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    Book type：Scholarly book

MISC

  • Low and Medium Vacuum: Fundamentals and Applications

    J. Vac. Soc. Jpn   58 ( 9 )   325 - 329   2015.09（ ISSN:18822398 ）

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    Publishing type：Article, review, commentary, editorial, etc. (scientific journal)   Kind of work：Single Work  

Presentations

  • Silicene formation on the Ag/Ni(111) surface International conference

    T. Fukuda, S. Sakamoto, K. Umezawa

    ECOSS-34  2018.08 

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    Presentation type：Oral presentation (general)  

  • In situ observation of the indium-induced phase transition on the Si(111) surface by high-temperature STM International conference

    T. Fukuda, S. N. Takeda

    ICN+T2018  2018.07 

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    Presentation type：Oral presentation (general)  

  • Hydrogen effect of the low-resistive ITO films on plastic substrates International conference

    T. Fukuda, Y. Kamada, T. Maeda, and T. Shingu

    ITFPC2017  2017.10 

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    Presentation type：Oral presentation (general)  

  • Site Correlation of Two-dimensional Cu-Ni Alloys on Ni(110) International conference

    T. Fukuda, I. Kishida, and K. Umezawa

    ECOSS-33  2017.08 

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    Presentation type：Oral presentation (general)  

  • ２次元Cu-Ni合金の構造相関 Domestic conference

    福田常男,齊藤猛流

    日本物理学会第73回年次大会  2017.03 

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    Presentation type：Oral presentation (general)  

Outline of collaborative research (seeds)

  • Vacuum technology and semiconductor thin film growth

    2001-

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    Request for collaborative research：The private sector, such as other institutions

    Type of research exchange：Technical consultation,　Contract research,　Joint research

    Application fields / methods etc：Surface coating, thin film devices, and active electronic devices utilied with molecular-beam epitaxy technique.

    Core knowledge, technology, information etc：Atomically resolved surface evaluation technology and crystal growth.

    We can offer vacumm-related technology. Particularly we are interested in semiconductor thin film formation technology and their evaluation.

Outline of education staff

  • 学部では「固体物理学Ⅰ・Ⅱ」の講義と「電子・物理工学実験I」のアナログ回路を担当しています。 大学院では「真空工学特論」の講義をしています。産業界で広く用いられている「真空技術」を物理学的基礎から実用レベルまで、段階を追って講義します。また、特別演習（電子物理工学Ⅱ）では、前期博士課程の学生のゼミを担当しています。

Charge of on-campus class subject

  • 固体物理学

    2024   Weekly class   Undergraduate

  • 電子物理工学実験1（電子材料）

    2024   Weekly class   Undergraduate

  • 電子物理工学概論1

    2024   Weekly class   Undergraduate

  • 表面・真空工学特論

    2024   Weekly class   Graduate school

  • 電子物理系特別研究第1（電子材料）

    2024   Intensive lecture   Graduate school

  • 電子物理系特別演習第1（電子材料）

    2024   Intensive lecture   Graduate school

  • 電子物理系特別演習（電子材料）

    2024   Intensive lecture   Graduate school

  • 電子・物理工学関係外書講読

    2024   Intensive lecture   Undergraduate

  • 電子・物理工学概論

    2024   Intensive lecture   Undergraduate

  • 電子物理工学概論1

    2022   Weekly class   Undergraduate

  • 初年次ゼミナール

    2022   Weekly class   Undergraduate

  • 電子物理系特別演習（電子材料）

    2022   Intensive lecture   Graduate school

  • 電子物理系特別演習第1（電子材料）

    2022   Intensive lecture   Graduate school

  • 表面・真空工学特論

    2022   Weekly class   Graduate school

  • 特別演習（物性制御工学Ⅰ）

    2022   Intensive lecture   Graduate school

  • 電子・物理工学実験Ⅰ

    2022   Weekly class   Undergraduate

  • 電子・物理工学関係外書講読

    2022   Intensive lecture   Undergraduate

  • 固体物理学Ⅰ

    2022   Weekly class   Undergraduate

  • 電子物理系特別研究（電子材料）

    2022   Intensive lecture   Graduate school

  • 特別演習（電子材料2）

    2022   Weekly class   Graduate school

  • 電子物理系特別演習第2（電子材料） （杉本）

    2022   Intensive lecture   Graduate school

  • Solid State Physics II

    2022   Weekly class   Undergraduate

  • 技術と環境/杉本［全］S

    2022   Weekly class   Graduate school

  • 前期特別研究(電子情報系)

    2022   Intensive lecture   Graduate school

  • 特別演習（物性制御工学II）

    2022   Intensive lecture   Graduate school

  • 後期特別研究(電子情報系)

    2022   Intensive lecture   Graduate school

  • ゼミナール(電子情報系)

    2022   Intensive lecture   Graduate school

  • 卒業研究(電子・物理工学科)

    2022   Intensive lecture   Undergraduate

  • 電子・物理工学実験Ⅰ

    2021     Undergraduate

  • 固体物理学Ⅱ

    2021     Undergraduate

  • 固体物理学Ⅰ

    2021   Weekly class   Undergraduate

  • 真空工学特論

    2020     Graduate school

  • 電子・物理工学実験Ⅰ

    2020     Undergraduate

  • 固体物理学Ⅱ

    2020     Undergraduate

  • 固体物理学Ⅰ

    2020     Undergraduate

  • 固体物理学Ⅱ

    2019     Undergraduate

  • 電子・物理工学実験Ⅰ

    2019     Undergraduate

  • 固体物理学Ⅰ

    2019     Undergraduate

  • 真空工学特論

    2018     Graduate school

  • 電子・物理工学実験Ⅰ

    2018     Undergraduate

  • 固体物理学Ⅰ

    2018     Undergraduate

  • 電子・物理工学実験Ⅰ

    2017     Undergraduate

  • 特別演習（電子物理工学Ⅱ）

    2017     Graduate school

  • 電子・物理工学実験Ⅱ

    2016     Undergraduate

  • 真空工学特論

    2016     Undergraduate

  • 特別演習（電子物理工学Ⅱ）

    2016     Undergraduate

  • 工業数学Ⅱ演習

    2015     Undergraduate

  • 工業数学Ⅲ演習

    2015     Undergraduate

  • 電子・物理工学実験Ⅱ

    2015     Undergraduate

  • 工業数学Ⅱ演習

    2014     Undergraduate

  • 工業数学Ⅲ演習

    2014     Undergraduate

  • 電子・物理工学実験Ⅱ

    2014     Undergraduate

  • 真空工学特論

    2014    

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Social Activities　⇒ Link to the list of Social Activities

  • 第59回真空技術基礎講習会

    Role(s)： Lecturer,　Planner,　Logistic support

    Type： Lecture

    日本表面真空学会  真空技術基礎講習会  オンライン  2024.05

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    SDGs：

    Audience： Researchesrs,　General public,　Company

    Number of participants：60（人）

    真空技術の普及を図るため講習会を運営した。

  • 第58回真空技術基礎講習会

    Role(s)： Lecturer,　Planner,　Logistic support

    Type： Lecture

    日本表面真空学会  真空技術基礎講習会  オンライン  2023.05

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    SDGs：

    Audience： Researchesrs,　General public,　Company

    Number of participants：60（人）

    真空技術の普及を図るため講習会を運営した。

  • 第57回真空技術基礎講習会

    Role(s)： Lecturer,　Planner,　Logistic support

    Type： Lecture

    日本表面真空学会  真空技術基礎講習会  オンライン  2022.10

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    Audience： Researchesrs,　General public,　Company

    Number of participants：60（人）

    真空技術の普及を図るため講習会を運営した。

  • 第56回真空技術基礎講習会

    Role(s)： Lecturer,　Planner,　Logistic support

    Type： Lecture

    日本表面真空学会  真空技術基礎講習会  オンライン  2021.10

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    Audience： Researchesrs,　General public,　Company

    Number of participants：60（人）

    真空技術の普及を図るため講習会を運営した。

  • 2021年日本表面真空学会学術講演会プログラム委員会アドバイザ

    Role(s)： Consultant

    Type： Lecture

    日本表面真空学会  日本表面真空学会学術講演会  オンライン  2021.06 - 2021.11

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    Audience： Researchesrs

    Number of participants：600（人）

    学会の学術講演会のプログラム委員会アドバイザーとして講演会プログラムの助言を行った。

  • 2020年日本表面真空学会学術講演会プログラム委員長

    Role(s)： Edit,　Planner,　Logistic support,　Report author

    Type： Lecture

    日本表面真空学会  2020.06 - 2020.11

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    Audience： Researchesrs,　Scientific organization

    Number of participants：450（人）

    2020年日本表面真空学会学術講演会のプログラム委員長として学会運営、プログラム編成の指揮を執った。

  • JIS原案作成委員会委員

    Role(s)： Edit,　Investigater

    Type： Investigation, survey

    日本表面真空学会  2020.03 - 2020.11

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    Audience： General public,　Scientific organization

    JIS規格Z8126-1の原案について調査、討議した。

  • 真空技術基礎講習会

    Role(s)： Lecturer,　Planner,　Logistic support

    Type： Lecture

    日本表面真空学会  真空技術基礎講習会  大阪産業技術研究所  2019.05

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    Audience： Researchesrs,　General public,　Company

    Number of participants：60（人）

  • せいかつ講座：身近な真空技術

    Role(s)： Lecturer

    Type： Lecture

    西宮市（宮水学園）  生活講座  ⻄宮市大学交流センター 大講義室  2019.01

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    Audience： General public

    Number of participants：130（人）

  • 真空技術基礎講習会

    Role(s)： Lecturer,　Planner,　Logistic support

    Type： Lecture

    日本表面真空学会  真空技術基礎講習会  大阪産業技術研究所  2018.05

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    Audience： Researchesrs,　General public,　Company

    Number of participants：60（人）

  • 真空技術基礎講習会

    Role(s)： Lecturer

    Type： Lecture

    日本真空学会  真空技術基礎講習会  大阪産業技術研究所  2017.05

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    Audience： Researchesrs,　General public,　Company

    Number of participants：56（人）

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Other

  • Job Career

    2001

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    Osaka City University