Updated on 2024/03/27

写真a

 
Yoshimura Takeshi
 
Organization
Graduate School of Engineering Division of Physics and Electronics Associate Professor
School of Engineering Department of Physics and Electronics
Title
Associate Professor
Affiliation
Institute of Engineering
Affiliation campus
Nakamozu Campus

Position

  • Graduate School of Engineering Division of Physics and Electronics 

    Associate Professor  2022.04 - Now

  • School of Engineering Department of Physics and Electronics 

    Associate Professor  2022.04 - Now

Degree

  • 博士(工学) （ Others ）

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials  / 電気電子材料工学

Research Interests

  • Ferroelectric films

  • 圧電MEMS

  • Reservoir Computing

  • Semiconductor device

  • Piezoelectric Films

  • 強誘電体薄膜

  • Physical Resevoir Computing

  • 非鉛圧電体

  • 電気熱量効果

  • 走査プローブ顕微鏡

  • 強誘電体ゲートトランジスタ

  • エナジーハーベスティング

Research subject summary

  • リザバーコンピューティングシステムの開発

  • 医用超音波トランスデューサに関する研究

  • 高効率振動発電デバイスの開発

  • 電気熱量効果に関する研究

  • 強誘電体ゲート電界効果トランジスタの開発

  • 非鉛圧電体薄膜の開発と評価

Research Career

  • 高効率振動発電デバイスの開発

    非鉛圧電体、MEMS、電界誘起構造相転移、ドメインエンジニアリング 

    2008.04 - Now 

  • 磁界振動発電技術の実用化

    2018.04 - Now 

  • リザバーコンピューティングシステムの開発

    Joint Research in Japan

    2022.04 - Now 

  • 電気熱量効果に関する研究

    強誘電体、ヒートポンプ  Joint Research in Japan

    2012.04 - Now 

  • 新規不揮発性メモリに関する研究

    トランジスタ、エピタキシャル、自発分極 

  • 異種分極界面に関する研究

    不揮発性メモリ、自発分極、分極反転 

Professional Memberships

  • 日本誘電体学会

    2020.04 - Now   Domestic

  • グリーンシステム技術分科会

    2013.04 - Now   Domestic

  • 日本真空協会

    2011.10 - Now   Domestic

  • 日本セラミックス協会

    2005.09 - Now   Domestic

  • 電気学会

    2003.03 - Now   Domestic

  • 応用物理学会

    1996.03 - Now   Domestic

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Committee Memberships (off-campus)

  • 革新的情報通信技術研究開発委託研究評価委員会専門委員   国立研究開発法人情報通信研究機構　  

    2022 - 2026.03 

  • 戦略的情報通信研究開発推進事業　専門評価委員   総務省  

    2022 - 2022.03 

  • 圧電MEMSデバイス信頼性国際標準化委員会委員   一般社団法人マイクロマシンセンター  

    2021.04 - 2022.03 

  • 運営委員   日本誘電体学会  

    2020.04 - Now 

  • 圧電MEMSデバイス信頼性国際標準化委員会委員   一般財団法人　マイクロマシンセンター  

    2020.04 - 2021.03 

  • 圧電MEMSデバイス信頼性国際標準化委員会委員   一般財団法人　マイクロマシンセンター  

    2019.04 - 2020.03 

  • MEMS圧電薄膜測定方法JIS原案作成委員会委員   一般財団法人　マイクロマシンセンター  

    2018.04 - 2019.03 

  • 平成30年度高機能ＪＩＳ等整備事業「自立型電源用セラミックス圧電素子の特性評価に関するＪＩＳ開発」委員会委員   一般社団法人　日本ファインセラミックス協会  

    2018.04 - 2019.03 

  • 平成30年度工業標準化推進事業委託費（戦略的国際標準化加速事業：政府戦略分野に係る国際標準開発活動）「圧電MEMSデバイス信頼性国際標準化委員会」委員   一般財団法人　マイクロマシンセンター  

    2018.04 - 2019.03 

  • 会長   グリーンシステム技術分科会  

    2017.07 - 2018.08 

  • 平成29年度高機能ＪＩＳ等整備事業「自立型電源用セラミックス圧電素子の特性評価に関するＪＩＳ開発」委員会委員   一般社団法人　日本ファインセラミックス協会  

    2017.04 - 2018.03 

  • 薄膜MEMS材料及び応用デバイスの特性測定方法及び曲げ信頼性試験方法に関する国際標準化委員会委員   一般財団法人　マイクロマシンセンター  

    2017.04 - 2018.03 

  • 平成28年度高機能ＪＩＳ等整備事業　「自立型電源用セラミックス圧電素子の特性評価に関するＪＩＳ開発」委員会委員   一般社団法人　日本ファインセラミックス協会  

    2016.04 - 2017.03 

  • 平成27年度省エネルギー等国際標準開発（国際電気標準分野）「薄膜MEMS材料及び応用デバイスの特性測定方法及び曲げ信頼性試験方法に関する国際標準化委員会」委員   一般財団法人　マイクロマシンセンター  

    2016.04 - 2017.03 

  • 平成27年度省エネルギー等国際標準開発（国際電気標準分野）「薄膜MEMS材料及び応用デバイスの特性測定方法及び曲げ信頼性試験方法に関する国際標準化委員会」委員   一般財団法人　マイクロマシンセンター  

    2015.04 - 2016.03 

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Awards

  • 第36回「センサー・マイクロマシンと応用システム」シンポジウム、優秀ポスター賞

    2019.10   電気学会  

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    Country：Japan

  • 平成30年度 日本材料学会論文賞

    2019.05   日本材料学会  

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    Country：Japan

  • 第10回集積化MEMSシンポジウム　優秀論文賞

    2019.03   応用物理学会  

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    Country：Japan

  • 2014年度APEX/JJAP編集貢献賞

    2015.04   応用物理学会  

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    Country：Japan

  • 第30回(2013年度) 優秀発表賞

    2013.10   強誘電体応用会議  

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    Country：Japan

  • 第29回エレクトロセラミックス研究討論会最優秀賞

    2009.10   (社)日本セラミックス協会  

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    Country：Japan

  • シンポジウムポスター優秀賞

    2005.09   日本セラミックス協会第18回秋季シンポジウム「誘電材料の新展開“次世代の電子デバイスを目指して”」  

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Job Career (off-campus)

  • Osaka Prefecture University

    2013

  • 日本学術振興会 特別研究員 (PD)

    2004.04 - 2005.03

  • 米国ペンシルベニア州立大学　材料研究所　博士研究員

    1999.10 - 2002.07

Papers

  • Piezoelectric MEMS-based physical reservoir computing system without time-delayed feedback Reviewed

    Takeshi Yoshimura, Taiki Haga, Norifumi Fujimura, Kensuke Kanda, Isaku Kanno

    Japanese Journal of Applied Physics   62 ( SM )   SM1013 - SM1013   2023.08（ ISSN:0021-4922 ）

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    Authorship：Lead author,　Corresponding author   Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    Abstract

    In this study, a physical reservoir computing system, a hardware-implemented neural network, was demonstrated using a piezoelectric MEMS resonator. The transient response of the resonator was used to incorporate short-term memory characteristics into the system, eliminating commonly used time-delayed feedback. In addition, the short-term memory characteristics were improved by introducing a delayed signal using a capacitance-resistor series circuit. A Pb(Zr,Ti)O<sub>3</sub>-based piezoelectric MEMS resonator with a resonance frequency of 193.2 Hz was employed as an actual node, and computational performance was evaluated using a virtual node method. Benchmark tests using random binary data indicated that the system exhibited short-term memory characteristics for two previous data and nonlinearity. To obtain this level of performance, the data bit period must be longer than the time constant of the transient response of the resonator. These outcomes suggest the feasibility of MEMS sensors with machine-learning capability.

    DOI： 10.35848/1347-4065/ace6ab

    Other URL： https://iopscience.iop.org/article/10.35848/1347-4065/ace6ab/pdf

  • Quasi-static piezoelectric strain and recoverable energy at a low biased field in Sr<sup>2+</sup> substituted electrostrictive BZT ceramic Reviewed International coauthorship

    Manna A.

    Bulletin of Materials Science   47 ( 1 )   2024.03（ ISSN:02504707 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1007/s12034-023-03083-2

  • Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation Reviewed

    Nakamoto T.

    ACS Nano   18 ( 3 )   2455 - 2463   2024.01（ ISSN:19360851 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1021/acsnano.3c11099

    PubMed

  • Electronic Materials Accelerating the Development of Ubiquitous Devices Invited Reviewed

    YOSHIMUA Takeshi

    Journal of the Society of Materials Science, Japan   72 ( 11 )   836 - 842   2023.11（ ISSN:05145163 ）

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    Authorship：Lead author,　Last author,　Corresponding author   Publishing type：Research paper (scientific journal)   Kind of work：Single Work   International / domestic magazine：Domestic journal  

    DOI： 10.2472/jsms.72.836

  • The ferroelectric orthorhombic phase formation of Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf>thin films on (-201) β-Ga<inf>2</inf>O<inf>3</inf>substrate by atomic layer deposition

    Naito K.

    Japanese Journal of Applied Physics   62 ( SM )   2023.11（ ISSN:00214922 ）

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  • Low-temperature homoepitaxial growth of β-Ga<inf>2</inf>O<inf>3</inf> thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique Reviewed

    Islam M.E.

    AIP Advances   13 ( 11 )   2023.11

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    DOI： 10.1063/5.0178100

  • Unusual Selective Monitoring of <i>N,N</i>-Dimethylformamide in a Two-Dimensional Material Field-Effect Transistor

    Akito Fukui, Keigo Matsuyama, Hiroaki Onoe, Shun Itai, Hidekazu Ikeno, Shunsuke Hiraoka, Kousei Hiura, Yuh Hijikata, Jenny Pirillo, Takahiro Nagata, Kuniharu Takei, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ACS Nano   17 ( 15 )   14981 - 14989   2023.07（ ISSN:1936-0851 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1021/acsnano.3c03915

    PubMed

  • Piezoelectric thin films for MEMS

    Isaku Kanno, Jun Ouyang, Jun Akedo, Takeshi Yoshimura, Barbara Malič, Paul Muralt

    Applied Physics Letters   122 ( 9 )   2023.02（ ISSN:0003-6951 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1063/5.0146681

  • Spontaneous Crystal Fluctuation in Hydrocarbon Polymer-Coated Monolayer MoS<inf>2</inf>, MoSe<inf>2</inf>, WS<inf>2</inf>, and WSe<inf>2</inf> with Strong Photoluminescence Enhancement Reviewed

    Nakahara T.

    ACS Photonics   10 ( 10 )   3605 - 3611   2023

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1021/acsphotonics.3c00670

  • Strong Photoluminescence Enhancement in Molybdenum Disulfide in Aqueous Media Reviewed

    Daisuke Kimura, Shotaro Yotsuya, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    Langmuir   38 ( 43 )   13048 - 13054   2022.11（ ISSN:07437463 ）

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    Publishing type：Research paper (scientific journal)  

    The interface between conventional semiconductors and aqueous ionic solutions is an important target in chemistry and materials science. Recently, a wide variety of research has been done on transition-metal dichalcogenides (TMDCs) for use as 2D layered semiconductors, and their optoelectronic properties have been widely explored. One representative TMDC, monolayer (1L) MoS2, is known to show a photoluminescence (PL) signal of a direct band gap nature, and the PL intensity is dependent on the carrier concentration. Various methods of 1L MoS2carrier modulation have been shown to enhance the PL intensity in dry environments. In contrast, enhancement in an aqueous environment is limited, and a strategy to design an interface with aqueous media has not yet been established. One proposed idea was an aqueous acid interface; however, the enhancement of the PL with this method was usually minimal, about 1 order of magnitude. In this study, we demonstrate a method to achieve strong PL enhancement in 1L MoS2in an aqueous media by incorporating bis(trifluoromethane)sulfonyl anion (TFSI-ion) in an acidic environment. With the addition of the TFSI-ion in an acidic environment, the enhancement factor of the PL in 1L MoS2is more than 100 times greater than its PL intensity in water. The molecular anion is the key factor, as the TFSI-ion facilitates the oxidation of MoS2. This anionic effect is the additional factor needed to modulate the optoelectronic properties of 2D semiconductors in aqueous media. The proposed idea could have potential applications for biochemical sensors in aqueous situations.

    DOI： 10.1021/acs.langmuir.2c01601

    PubMed

  • Crystal structure and piezoelectric properties of lead-free epitaxial (K,Na)NbO<inf>3</inf>thin films grown on Si substrates Reviewed

    Kiyotaka Tanaka, Yoshiyuki Kawata, Sang Hyo Kweon, Goon Tan, Takeshi Yoshimura, Isaku Kanno

    Applied Physics Letters   121 ( 17 )   2022.10（ ISSN:00036951 ）

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    Publishing type：Research paper (scientific journal)  

    Epitaxial growth of lead-free (K,Na)NbO3 (KNN) thin films on (001)SrRuO3/Pt/ZrO2/Si substrates was achieved by using RF magnetron sputtering. X-ray diffraction measurements revealed that lattice constants (a1 = 0.3987 nm, a2 = 0.3959 nm, a3 = 0.4011 nm) of epitaxial KNN thin films with a pseudo cubic system were close to KNN single crystals. Vertical piezoelectric force microscopy observation indicated that the spontaneous polarization Ps with a downward direction was dominant, and the epitaxial KNN thin films were naturally polarized. The epitaxial KNN thin films exhibited low relative dielectric constant (ϵr ∼267). In addition, piezoelectric coefficients |e31,f| showed a constant value of about 6.5 C m-2 with the increase in applied positive voltages. Relatively high converse |e31,f| values were obtained at low applied voltages due to an intrinsic piezoelectric effect. Therefore, the epitaxial KNN thin films might enable piezoelectric microelectromechanical systems driven at low applied voltages.

    DOI： 10.1063/5.0110135

  • Enhanced performance on piezoelectric MEMS vibration energy harvester by dynamic magnifier under impulsive force Reviewed

    Sengsavang Aphayvong, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura, Takeshi Yoshimura

    Applied Physics Letters   121 ( 17 )   172902 - 172902   2022.10（ ISSN:0003-6951 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    Vibration energy harvesters that use resonance phenomena exhibit a high output power density for constant frequency vibrations, but they suffer from a significant drop in performance for non-steady-state vibrations, which are important for practical applications. In this work, we demonstrate that the output power under an impulsive force can be increased significantly by placing a U-shaped metal component, called a dynamic magnifier (DM), under an MEMS piezoelectric vibration energy harvester (MEMS-pVEH) with a 6 mm long cantilever using a 3  μm thick Pb(Zr,Ti)O<sub>3</sub> film. Based on the results of numerical calculations using a model of pVEH with a two-degree-of-freedom (2DOF) system, the DM was designed to have the same resonant frequency as the MEMS-pVEH and a high mechanical quality factor ([Formula: see text]). The waveforms of the output voltage of the fabricated 2DOF-pVEHs were measured for impulsive forces with various duration times, and the output power was calculated by integrating the waveforms over time. The output power of the MEMS-pVEH placed on the DM with a [Formula: see text] of 56 showed a gradual change according to the duration of applying an impulsive force and a maximum of 19 nJ/G<sup>2</sup> (G: gravitational acceleration) when the duration of the impulsive force was 3.8 ms. This result was about 90 times greater than the output power of the MEMS-pVEH without a DM. While it is not easy to fabricate pVEHs with a complex 2DOF structure using only the MEMS process, we have demonstrated that the output power can be significantly improved by adding a spring structure to a simple MEMS-pVEH.

    DOI： 10.1063/5.0116838

  • Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

    Keigo Matsuyama, Ryuya Aoki, Kohei Miura, Akito Fukui, Yoshihiko Togawa, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ACS Applied Materials and Interfaces   14 ( 6 )   8163 - 8170   2022.02（ ISSN:1944-8244 ）

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    Publishing type：Research paper (scientific journal)  

    Carrier modulation in transition-metal dichalcogenides (TMDCs) is of importance for applying electronic devices to tune their transport properties and controlling phases, including metallic to superconductivity. Although the surface charge transfer doping method has shown a strong modulation ability of the electronic structures in TMDCs and a degenerately doped state has been proposed, the details of the electronic states have not been elucidated, and this transport behavior should show a considerable thickness dependence in TMDCs. In this study, we characterize the metallic transport behavior in the monolayer and multilayer MoS2 under surface charge transfer doping with a strong electron dopant, benzyl viologen (BV) molecules. The metallic behavior transforms to an insulative state under a negative gate voltage. Consequently, metal-insulator transition (MIT) was observed in both monolayer and multilayer MoS2 correlating with the critical conductivity of order e2/h. In the multilayer case, the BV molecules strongly modulated the topmost surface layer in the bulk MoS2; the transfer characteristics suggested a crossover from a heterogeneously doped state with a doped topmost layer to doping in the deep layers caused by the variation in the gate voltage. The findings of this work will be useful for understanding the device characteristics of thin-layered materials and for applying them to the controlling phases via carrier modulation.

    DOI： 10.1021/acsami.1c22156

    PubMed

  • Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique.

    Akito Fukui, Yuki Aoki, Keigo Matsuyama, Hisashi Ichimiya, Ryo Nouchi, Kuniharu Takei, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    Nanotechnology   33 ( 7 )   2021.11（ ISSN:0957-4484 ）

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：International journal  

    Graphene nanoribbon (GNR)-based materials are a promising device material because of their potential high carrier mobility and atomically thin structure. Various approaches have been reported for preparing the GNR-based materials, from bottom-up chemical synthetic procedures to top-down fabrication techniques using lithography of graphene. However, it is still difficult to prepare a large-scale GNR-based material. Here, we develop a procedure to prepare a large-scale GNR network using networked single-layer inorganic nanowires. Vanadium pentoxide (V2O5) nanowires were assembled on graphene with an interfacial layer of a cationic polymer via the electrostatic interaction. A large-scale nanowire network can be prepared on graphene and is stable enough for applying an oxygen plasma. Using plasma etching, a networked graphene structure can be generated. Removing the nanowires results in a networked flat structure whose both surface morphology and Raman spectrum indicate a GNR networked structure. The field-effect device indicates the semiconducting character of the GNR networked structure. This work would be useful for fabricating a large-scale GNR-based material as a platform for GNR junctions for physics and electronic circuits.

    DOI： 10.1088/1361-6528/ac3615

    PubMed

  • Time‐Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films Reviewed

    Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura

    Advanced Electronic Materials 雑誌 Willey   7 ( 8 )   2021.08

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    Kind of work：Joint Work  

  • Time-Dependent Imprint in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> Ferroelectric Thin Films Reviewed

    Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura

    Advanced Electronic Materials   7 ( 8 )   2021.08

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    Authorship：Last author,　Corresponding author   Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    The discovery of the HfO2-based ferroelectric films has opened new opportunities for using this silicon-compatible ferroelectric material to realize low-power logic circuits and high-density non-volatile memories. The functional performances of ferroelectrics are intimately related to their dynamic response to external stimuli, such as electric fields at finite temperatures. In the case of HfO2-based films, the time-dependent imprint and wake-up effect, which distinguish them from conventional ferroelectrics, play important roles in understanding the remaining reliability issues, such as insufficient endurance. In this study, the time-dependent imprint process is carefully investigated using Hf0.5Zr0.5O2 (HZO) films with different ferroelectric properties and defect density. The amount of redistributed charge, which causes imprint during polarization retention, is affected by the remanent polarization of the ferroelectric layer, suggesting that the depolarization field corresponding to the remanent polarization generates and works as a driving force of charge redistribution. The time-dependent measurement of the imprint distinguishes the origins of charge redistribution processes, which have different time constants. In addition, the correlation between the amount of redistributed charge and the dielectric relaxation of the HZO films is discussed. Correlations are identified between the redistributed charge and the dielectric relaxation, indicating that the mobile charge contributes to the time-dependent imprint.

    DOI： 10.1002/aelm.202100151

  • Investigation of the wake-up process and time-dependent imprint of Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> film through the direct piezoelectric response Reviewed

    Kenshi Takada, Mikio Murase, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Norifumi Fujimura, Takeshi Yoshimura

    Applied Physics Letters   119 ( 3 )   2021.07（ ISSN:0003-6951 ）

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    Authorship：Corresponding author   Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    Ferroelectric HfO2-based thin films, which have been attracting a great deal attention because of their potential use in various applications, are known for their unique properties, such as a large time-dependent imprint and wake-up effect, which differentiate them from conventional ferroelectric materials. In this study, direct piezoelectric measurement was employed to investigate the state of polarization during the retention and wake-up process without applying an electric field. The polarization-electric field hysteresis loop of a sputtered Hf0.5Zr0.5O2 (HZO) film with a thickness of 10 nm showed a time-dependent imprint at room temperature during polarization retention, and the internal electric field that generated the imprint gradually increased from 0.05 to 0.6 MV/cm. While a space charge density of more than 1 μC/cm2 is required to form such an internal electric field, it was found that the magnitude of the direct piezoelectric response did not change at all during polarization retention. On the other hand, both the remanent polarization and direct piezoelectric response increased during the wake-up process. Based on the difference in the variation over time of these two characteristics, we concluded that the non-ferroelectric layer exists at the interface between the HZO film and TaN electrode and gradually transitions to ferroelectric phases through the electric field cycle.

    DOI： 10.1063/5.0047104

  • Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO<inf>3</inf> ferroelectric epitaxial thin film

    K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura

    AIP Advances   11 ( 7 )   2021.07

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    Publishing type：Research paper (scientific journal)  

    The electron excitation mechanism and the spin accompanied by electron transition in a multiferroic YMnO3 epitaxial thin film were studied using photoluminescence (PL) spectroscopy. The thin film exhibits an intra-atomic transition of Mn3+ and the A1 optical coherent phonon. This study particularly focuses on the correlation between the electron transition corresponding to the on-site Coulomb energy and antiferromagnetic spin order. To clarify the complex excitation mechanism, the excitation energy and temperature dependences of the PL were analyzed. The key finding was that the intensities of the PL band at 1.43 eV increase as the excitation energy approaches the absorption peak energy corresponding to the on-site Coulomb energy and as the temperature decreases below 80 K, corresponding to the Néel temperature. These results suggest that the PL band is mediated by the spin-flip and relaxation processes.

    DOI： 10.1063/5.0055052

  • Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation

    Yuki Yamada, Yan Zhang, Hidekazu Ikeno, Keisuke Shinokita, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya

    ACS Applied Materials & Interfaces   13 ( 21 )   25280 - 25289   2021.06（ ISSN:1944-8244 ）

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    Publishing type：Research paper (scientific journal)  

    Due to the direct band gap nature, extensive studies have been conducted to improve the optical behavior in monolayer transition metal dichalcogenides (TMDCs) with a formula of MX2 (M = Mo, W; X = S, Se, Te). One of the strongest modulating agents of optical behavior is a molecular superacid treatment; however, the chemical event has not been unveiled. Also, the engineering protocol for keeping the treatment is immature. In this work, we systematically study the superacid treatment procedures on monolayer molybdenum disulfide (MoS2) and propose that the interaction, a hydrophilic interaction, between the superacid molecule and MoS2 surface would be critical. As a result of the interaction, the superacid molecules spontaneously form an acidic layer with the thickness of several nanometers on the surface. The power-dependent photoluminescence (PL) measurement indicates the edge of MoS2 flake is more effective and electronically modulated by the treatment. By understanding the superacid nanolayer formation by the treatment, we succeeded in maintaining the ultrastrong PL in the superacid-treated MoS2 for more than 30 days in the ambient air by encapsulation with transparent organic polymers. This study advances the understanding and designing applications of strong luminescent properties in the superacid-treated TMDCs and paves the way toward engineering exciton dynamics and an experimental platform for treating multibody states.

    DOI： 10.1021/acsami.1c04980

    PubMed

  • Characteristics of Sputtered Lead Zirconate Titanate Thin Films with Different Layer Configurations and Large Thickness Reviewed

    K Kanda, T Koyama, T Yoshimura, S Murakami, K Maenaka

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 雑誌 IEEE   68 ( 5 )   2021.05

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    Kind of work：Joint Work  

  • Strong Photoluminescence Enhancement from Bilayer Molybdenum Disulfide via the Combination of UV Irradiation and Superacid Molecular Treatment

    Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Sciences   11 ( 8 )   3530 - 3530   2021.04

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    Publishing type：Research paper (scientific journal)  

    A direct band gap nature in semiconducting materials makes them useful for optical devices due to the strong absorption of photons and their luminescence properties. Monolayer transition metal dichalcogenides (TMDCs) have received significant attention as direct band gap semiconductors and a platform for optical applications and physics. However, bilayer or thicker layered samples exhibit an indirect band gap. Here, we propose a method that converts the indirect band gap nature of bilayer MoS2, one of the representative TMDCs, to a direct band gap nature and enhances the photoluminescence (PL) intensity of bilayer MoS2 dramatically. The procedure combines UV irradiation with superacid molecular treatment on bilayer MoS2. UV irradiation induces the conversion of the PL property with an indirect band gap to a direct band gap situation in bilayer MoS2 when the interaction between the top and bottom layers is weakened by a sort of misalignment between them. Furthermore, the additional post-superacid treatment dramatically enhances the PL intensity of bilayer MoS2 by a factor of 700×. However, this procedure is not effective for a conventional bilayer sample, which shows no PL enhancement. From these results, the separated top layer would show a strong PL from the superacid treatment. The monolayer-like top layer is physically separated from the substrate by the intermediate bottom MoS2 layer, and this situation would be preferable for achieving a strong PL intensity. This finding will be useful for controlling the optoelectronic properties of thick TMDCs and the demonstration of high-performance optoelectronic devices.

    DOI： 10.3390/app11083530

  • Investigation of efficient piezoelectric energy harvesting from impulsive force Reviewed

    S. Aphayvong, T. Yoshimura, S. Murakami, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   2020.11（ ISSN:0021-4922 ）

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    Publishing type：Research paper (scientific journal)  

    © 2020 The Japan Society of Applied Physics. This study investigated the electromechanical properties of MEMS piezoelectric vibration energy harvesters (MEMs-pVEHs) under various impulsive forces to discuss effective harvesting energy from random vibrations. MEMS-pVEHs with different resonance frequencies with an energy conversion efficiency close to the theoretical maximum were used. The output waveforms for various impulsive force could be fitted well with the dynamic model of pVEHs. The output energy density reached 34 nJ g-1 for an impulsive force with an acceleration of 8 m s-2. To obtain high energy conversion efficiency, pVEHs should have a response time longer than the duration of the impulsive force; efficiency higher than 50% was obtained by an impulsive force with a short duration. Furthermore, the study investigated the pVEH requirements for impulsive force based on the results of numerical simulation.

    DOI： 10.35848/1347-4065/abad16

  • Dependency of direct and inverse transverse piezoelectric properties on composition in self-polarized epitaxial (K<inf>x</inf>Na<inf>1-x</inf>)NbO<inf>3</inf>films grown via a hydrothermal method Reviewed

    Akinori Tateyama, Yoshiharu Ito, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Takeshi Yoshimura, Hiroshi Funakubo

    Japanese Journal of Applied Physics   59 ( SP )   2020.11（ ISSN:0021-4922 ）

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    © 2020 The Japan Society of Applied Physics. (KxNa1-x)NbO3 films that were approximately 3 μm in thickness and with various x values were systematically deposited at 240 C on (100)cSrRuO3//(100)SrTiO3 substrates using a hydrothermal method. Direct and inverse transverse piezoelectric coefficients, e 31,f, near 0 kV cm-1 were approximately -5.0 C m-2 for the as-deposited films with a wide range of x values without any poling treatment. A large difference in e 31,f value was not observed before or after poling treatment upon applying a positive electric field, suggesting that the as-deposited (KxNa1-x)NbO3 films with x = 0.36-0.88 were almost fully in a self-polarized state. (KxNa1-x)NbO3 films with x = 0.36-0.88 without any poling treatment showed a figure of merit for an energy harvester (FOM = e 31,f2/ϵ r) above 0.13, as calculated directly from e 31,f. These FOM values are relatively high compared with the reported ones for other lead-free films that have a perovskite structure.

    DOI： 10.35848/1347-4065/aba9b3

  • Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films Reviewed

    M. Murase, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPC05 - SPPC05   2020.11（ ISSN:0021-4922 ）

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    For a comprehensive study of the growth mechanisms of Pb(Zr,Ti)O3 (PZT), we employed a combinatorial sputtering method that enabled us to fabricate films with composition and substrate temperature gradients in-plane. The gradient of the amount of Pb supply was created using PZT ceramic and Pb3O4 powder targets. The substrate temperature gradient was generated in an orthogonal direction by inserting a shadow mask between the heater and substrate. The PZT film was deposited on uniformly deposited (001)LaNiO3/Si in a substrate temperature range of 490 °C-570 °C. It was determined that although the growth condition of PZT films has a relatively large process window, the orientation is easily changed by the temperature and the amount of Pb supply. In addition, the range of the growth temperature, where the films show ferroelectricity decreases with decreasing the amount of Pb supply.

    DOI： 10.35848/1347-4065/abb4c0

    Other URL： https://iopscience.iop.org/article/10.35848/1347-4065/abb4c0/pdf

  • Change in the defect structure of composition controlled single-phase YbFe<inf>2</inf>O<inf>4</inf>epitaxial thin films Reviewed

    K. Shimamoto, J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   2020.11（ ISSN:0021-4922 ）

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    Publishing type：Research paper (scientific journal)  

    © 2020 The Japan Society of Applied Physics. A new type of ferroelectricity, originating from charge order and coupled to magnetism, occurs in YbFe2O4 containing triangular Fe/O double layers, which has recently generated great interest in this material. YbFe2O4 tolerates more than 10% iron deficiency even in bulk single crystals with space group R3m. Even though a large number of Fe deficiencies are introduced in the thin film form due to vaporization of Fe ions during deposition at high temperatures, the crystal structure with the space group of R3m in the films never changes within the Fe/Yb composition ratio from 1.3 to 2.2. In the previous research, the effects of the Fe/Yb composition ratio - especially in the large Fe deficient area (1.31-1.86) - on the lattice distortion and chemical bonding state of non-stoichiometric (0001)-oriented YbFe2O4 epitaxial thin films on (111) YSZ and (0001) sapphire substrates were examined. The variation of the lattice constant, Raman spectra, and optical absorption coefficient indicated that the existence of the stacking fault and the antisite Yb play an important role in the significant iron deficiency without changing the crystal structure of non-stoichiometric YbFe2O4 thin films.

    DOI： 10.35848/1347-4065/aba9b2

  • Good piezoelectricity of self-polarized thick epitaxial (K,Na)NbO3 films grown below the Curie temperature (240 °C) using a hydrothermal method Reviewed

    Akinori Tateyama, Yoshiharu Ito, Yoshiko Nakamura, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Takeshi Yoshimura, Hiroshi Funakubo

    Applied Physics Letters   117 ( 14 )   142903 - 142903   2020.10（ ISSN:0003-6951 ）

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    Using a hydrothermal method, (K0.88Na0.12)NbO3 films were deposited at 240 °C on (100) cSrRuO3//(100)SrTiO3 substrates. Moreover, without any poling treatment, direct and inverse transverse piezoelectric coefficients, e31,f, near 0 kV/cm were approximately -5.0 C/m2 for the as-deposited film. This value was nearly unchanged following the application of an electric field and poling treatment, suggesting that as-deposited films are almost in a fully self-polarized state without the application of an electric field. As-deposited films with a thickness of up to 22 μm showed constant piezoelectricity without any poling treatment. The films did not crack or peel because of substrates due to the small thermal strain originating from the low deposition temperature. The figures of merit (FOM) for the vibration energy harvester [FOM = e31,f2/(ϵ0ϵr)] and sensor [FOM = e31,f/(ϵ0ϵr)] were estimated to be good at 32.8 GPa and -5.9 GV/m, respectively, primarily because of the low relative dielectric constant of ∼110. Furthermore, the piezoelectric voltage coefficient g31 [= d31/(ϵ0ϵr)] was estimated and demonstrated a high value of 0.073 Vm/N.

    DOI： 10.1063/5.0017990

  • Supersensitive Ultrasound Probes for Medical Imaging by Piezoelectric MEMS with Complemented Transmitting and Receiving Transducers Reviewed

    Kenji Suzuki, Yuta Nakayama, Naoki Shimizu, Takashi Mizuno, Yoshio Mita, Takeshi Yoshimura

    2020 IEEE International Ultrasonics Symposium 雑誌 IEEE   2020.09

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    Kind of work：Joint Work  

  • Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide

    Yuki Yamada, Keisuke Shinokita, Yasuo Okajima, Sakura N. Takeda, Yuji Matsushita, Kuniharu Takei, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya

    ACS Applied Materials and Interfaces   12 ( 32 )   36496 - 36504   2020.08（ ISSN:1944-8244 ）

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    © 2020 American Chemical Society. To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer transition-metal dichalcogenides (TMDCs) are candidates for this, but their quantum yield (QY) is known to be poor. Recently, a molecular superacid treatment of bis(trifluoromethane)sulfonimide (TFSI) generated unambiguously bright monolayer TMDCs and a high QY. However, this method is highly dependent on the processing conditions and therefore has not been generalized. Here, we shed light on environmental factors to activate the photoluminescence (PL) intensity of the TFSI-treated monolayer MoS2, with a factor of more than 2 orders of magnitude greater than the original by photoactivation. The method is useful for both mechanically exfoliated and chemically deposited samples. The existence of photoirradiation larger than the band gap demonstrates enhancement of the PL of MoS2; on the other hand, activation by thermal annealing, as demonstrated in the previous report, is less effective for enhancing the PL intensity. The photoactivated monolayer MoS2 shows a long lifetime of ∼1.35 ns, more than a 30-fold improvement over the original as exfoliated. The consistent realization of the bright monolayer MoS2 reveals that air exposure is an essential factor in the process. TFSI treatment in a N2 environment was not effective for achieving a strong PL, even after the photoactivation. These findings can serve as a basis for engineering the bright atomically thin materials for 2D optoelectronics.

    DOI： 10.1021/acsami.0c09084

    PubMed

  • Investigation of the electrocaloric effect in ferroelectric polymer film through direct measurement under alternating electric field Reviewed

    Matsushita, Y., Yoshimura, T., Kiriya, D., Fujimura, N.

    Applied Physics Express 雑誌 The Japan Society of Applied Physics   13 ( 4 )   2020.04

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    Kind of work：Joint Work  

  • Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs Reviewed

    Fujimura, N., Yoshimura, T.

    Topics in Applied Physics 雑誌 Springer   131   2020.03

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    Kind of work：Joint Work  

  • Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method Reviewed

    Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoro, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura

    ECS Transactions   25 ( 8 )   693 - 698   2019.12

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    DOI： 10.1149/1.3207657

    Other URL： https://iopscience.iop.org/article/10.1149/1.3207657

  • Output Power of Piezoelectric MEMS Vibration Energy Harvesters under Random Oscillation Reviewed

    S. Murakami, T. Yoshimura, M. Aramaki, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura

    Journal of Physics: Conference Series   1407 ( 1 )   2019.12（ ISSN:1742-6588 ）

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    Publishing type：Research paper (international conference proceedings)  

    © Published under licence by IOP Publishing Ltd. The output characteristics of MEMS piezoelectric vibration energy harvesters (PVEHs) under random oscillations are analysed. We fabricated cantilever-type MEMS-PVEHs using Pb(Zr,Ti)O3 films. The autocorrelation function of the transient displacement of the cantilever tip under random oscillations features a narrow-band random vibration. From the power spectral density (PSD) of the output voltage of the PVEHs, the resonance frequency decreases and the full-width at half-maximum increases with increasing vibration acceleration. By comparing output properties under various sinusoidal oscillations, nonlinear effects including the soft-spring effect and nonlinear damping effect clearly influence the output characteristics under random oscillations. The power generation is proportional to the square of the vibration acceleration even in the acceleration region where nonlinear effects become conspicuous.

    DOI： 10.1088/1742-6596/1407/1/012082

  • Quantitative analysis of the direct piezoelectric response of bismuth ferrite films by scanning probe microscopy Reviewed

    Kento Kariya, Takeshi Yoshimura, Katsuya Ujimoto, Norifumi Fujimura

    Scientific Reports   9 ( 1 )   19727   2019.12

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    © 2019, The Author(s). Polarisation domain structure is a microstructure specific to ferroelectrics and plays a role in their various fascinating characteristics. The piezoelectric properties of ferroelectrics are influenced by the domain wall contribution. This study provides a direct observation of the contribution of domain walls to the direct piezoelectric response of bismuth ferrite (BiFeO3) films, which have been widely studied as lead-free piezoelectrics. To achieve this purpose, we developed a scanning probe microscopy-based measurement technique, termed direct piezoelectric response microscopy (DPRM), to observe the domain structure of BiFeO3 films via the direct piezoelectric response. Quantitative analysis of the direct piezoelectric response obtained by DPRM, detailed analysis of the domain structure by conventional piezoelectric force microscopy, and microscopic characterisation of the direct piezoelectric properties of BiFeO3 films with different domain structures revealed that their direct piezoelectric response is enhanced by the walls between the domains of spontaneous polarisation in the same out-of-plane direction.

    DOI： 10.1038/s41598-019-56261-w

    PubMed

  • Convection-Flow-Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface-Charge Transfer Doping of Molybdenum Disulfide Reviewed

    Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ChemistryOpen   8 ( 7 )   908 - 914   2019.07

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    © 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA. Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post-silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non-destructive modulation method. Recently, a surface-charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures. The successful dopant is a neutral benzyl viologen (BV0); however, the problem remains of how to effectively prepare the BV0 molecules. A reduction process with NaBH4 in water has been proposed as a preparation method, but the NaBH4 simultaneously reacts vigorously with the water. Here, a simple method is developed, in which the reaction vial is placed on a hotplate and a fragment of air-stable metal is used instead of NaBH4 to prepare the BV0 dopant molecules. The prepared BV0 molecules show a strong doping ability in terms of achieving a degenerate situation of a TMDC, MoS2. A key finding in this preparation method is that a convection flow in the vial effectively transports the produced BV0 to a collection solvent. This method is simple and safe and facilitates the tuning of the optoelectronic properties of nanomaterials by the easily-handled dopant molecules.

    DOI： 10.1002/open.201900169

    PubMed

  • Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO <inf>3</inf> film with improved electromechanical coupling factor Reviewed

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Sensors and Actuators, A: Physical   291   167 - 173   2019.06（ ISSN:0924-4247 ）

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    © 2019 Elsevier B.V. The present study reports the improvement of piezoelectric properties of sputtered BiFeO 3 films, and application to piezoelectric MEMS vibration energy harvesters (MEME-pVEHs). (100)-oriented BiFeO 3 films were obtained on (100)-oriented LaNiO 3 bottom electrodes grown on (100) Si substrates at deposition temperatures ranging from 450 °C to 550 °C. While all the films showed well-defined ferroelectric hysteresis loops at room temperature, the highest e 31,f coefficient of −3.6 C/m 2 was obtained at 500 °C. The increase of the e 31,f coefficient with increasing of the Rayleigh constant indicates the domain wall substantially contributes to the piezoelectric properties of the BiFeO 3 films. MEMS-pVEHs measuring 1 × 6 mm 2 and Si proof mass of 3.0 mg were fabricated using the BiFeO 3 film. The resonance frequency, electromechanical coupling factor, and mechanical quality factor were determined as 151.2 Hz, 0.1%, and 850, respectively. The maximum output power was 2.4 μW at 0.3 G, which is comparable with that of the best-performing MEMS-pVEHs using Pb(Zr,Ti)O 3 films.

    DOI： 10.1016/j.sna.2019.03.050

  • Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules Reviewed

    Hisashi Ichimiya, Masahiro Takinoue, Akito Fukui, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    ACS Applied Materials and Interfaces   11 ( 17 )   15922 - 15926   2019.05（ ISSN:1944-8244 ）

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    © 2019 American Chemical Society. Modulating the electronic structure of semiconducting materials is critical to developing high-performance electronic and optical devices. Transition metal dichalcogenides (TMDCs) are atomically thin semiconducting materials. However, before they can be used successfully in electronic and optical devices, modulation of their carrier concentration at the nanometer scale must be achieved. Molecular doping has been successful in modulating the carrier concentration; however, the scientific approach for selective and local carrier doping at the nanometer scale is still missing. Here, we demonstrate a proof-of-concept of modulating the carrier concentration of TMDCs laterally on a scale of around 100 nm using spontaneous pattern formation of an ultrathin film consisting of molecular electron dopants. When the water made contact with the molecular film (∼10 nm), a spontaneous pattern formation was observed on both the monolayer and bulk TMDCs. We revealed that the pattern-formation dynamics and nanoscopic flow rate of the molecules were highly dependent on the thickness of the TMDCs, since the band gap varies based on the number of layers. Analyses of topographic images of the molecular patterns and photoluminescence spectra of the TMDCs indicated that the spontaneously patterned molecular films induced a local carrier doping. Our results demonstrate a spontaneous formation of a mosaic electronic structure. This work is useful for making tiny-scale electronic junctions on TMDCs and semiconducting materials to make numerous p/n junctions simultaneously for optoelectronic devices.

    DOI： 10.1021/acsami.9b03367

    PubMed

  • Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment Reviewed

    Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Physics Express   12 ( 5 )   2019.05（ ISSN:1882-0778 ）

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    © 2019 The Japan Society of Applied Physics. Monolayer molybdenum disulfide's (MoS2) direct band gap nature makes it a good platform for realizing atomically thin optoelectronic devices. However, an issue is its low luminescence brightness. In this research, we demonstrate a strategy to achieve strong photoluminescence (PL) of monolayer MoS2, by treatment with a redox-active molecule, fluoranil. An important finding is that the factor of PL enhancement depends strongly on the solvent used and the PL changes by more than one order of magnitude. This work is useful for harnessing the strong optical properties of MoS2 by the combination of oxidizing molecules and engineering the solvent used.

    DOI： 10.7567/1882-0786/ab1544

  • Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system Reviewed

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura

    Applied Physics Letters   114 ( 13 )   2019.04（ ISSN:0003-6951 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019 Author(s). Enhancing the output power at small input acceleration is a major concern for enabling practical application of vibration energy harvesters. In this study, a two-degree of freedom system (2-DOF) was employed to solve this issue. The numerical calculations using the lumped parameter model of the piezoelectric vibration energy harvesters (pVEHs) with 2-DOF indicate that the harvesters show two resonance peak and an increase in the output power of several ten times compared with the harvester with a single degree of freedom. Based on calculations, the prototype of pVEH with 2-DOF was fabricated using a micro-machined pVEH and a metal cantilever. The output power of the harvester is 3.4 μW at 0.1 Grms, which is 17 times higher than that of the micro-electro-mechanical system-pVEH. Moreover, the resonance frequency on the pVEH with 2-DOF is easily adjusted because of the coupled vibration of the two masses.

    DOI： 10.1063/1.5093956

  • Fabrication and Characterization of (Ba,La)SnO <inf>3</inf> Semiconducting Epitaxial Films on (111) and (001) SrTiO <inf>3</inf> Substrates Reviewed

    Kohei Miura, Daisuke Kiriya, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura

    Physica Status Solidi (A) Applications and Materials Science   216 ( 5 )   2019.03（ ISSN:1862-6300 ）

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    Publishing type：Research paper (scientific journal)  

    © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Recently, BaSnO 3 has attracted great attention as a promising transparent oxide semiconductor with a large bandgap (3.3 eV) and high mobility (320 cm 2 V −1 s −1 ), and many reports have discussed the origin of its high mobility. Specifically, its effective mass m* has been investigated with both calculations and experiments. First-principles calculations have suggested that m* is small near the Γ point and that this m* assists the high mobility. Therefore, it is quite important to study the anisotropy in the mobility of this material. However, except for (001) BaSnO 3 , there are almost no reports on the electrical transport properties of the films with other orientations. In this paper, the authors fabricate (111) and (001) (Ba,La)SnO 3 films by using pulsed laser deposition to evaluate the structural differences including the epitaxial strain and the orientation distribution generated from the differences in the growth mode that is originated in the ionic arrangement of each surface. The effects of the structural differences for the conductivities of (001) and (111) films and how do the authors achieve the epitaxial films with high mobility are discussed.

    DOI： 10.1002/pssa.201700800

  • Microenergy harvesting using BiFeO3 films Reviewed

    Takeshi Yoshimura

    Nanoscale Ferroelectric-Multiferroic Materials for Energy Harvesting Applications   195 - 215   2019.02

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    Publishing type：Part of collection (book)  

    © 2019 Copyright All rights reserved. Vibration energy harvesting has attracted much attention. In this chapter, the principles of a piezoelectric vibration energy harvester are summarized and the figure of merit (FOM) for the piezoelectric film is discussed. Then BiFeO3 is focused on as a promising piezoelectric film for this application. Various approaches to obtaining a high FOM on BiFeO3 films are introduced. Finally, the device performance of the harvester using BiFeO3 films is presented.

    DOI： 10.1016/B978-0-12-814499-2.00011-6

  • Saturated and Pinched Ferroelectric Hysteresis Loops in BiFeO <inf>3</inf> Ceramics Reviewed

    Jin Hong Choi, Takeshi Yoshimura, Norifumi Fujimura, Chae Il Cheon

    Journal of the Korean Physical Society   74 ( 3 )   269 - 273   2019.02（ ISSN:0374-4884 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019, The Korean Physical Society. BiFeO 3 (BFO) ceramics were prepared by conventional solid-state reaction method without quenching. The effect of the sintering condition on the phase evolution and the ferroelectric properties of these BFO ceramics were investigated. A pinched polarization - electric field (P-E) hysteresis loop was observed in the sample sintered at high temperature for a short period (820 °C for 1 hour) because the domain wall motion is restricted by a large number of ionic defects such as oxygen vacancies. The BFO sample sintered at low temperature for a long period (760 °C for 6 hours) displayed a well-saturated P-E hysteresis loop due to its low ionic defect density.

    DOI： 10.3938/jkps.74.269

  • Time-resolved simulation of the negative capacitance stage emerging at the ferroelectric/semiconductor hetero-junction Reviewed

    K. Takada, T. Yoshimura, N. Fujimura

    AIP Advances   9 ( 2 )   2019.02

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    Publishing type：Research paper (scientific journal)  

    © 2019 Author(s). Recently, a number of papers have demonstrated sub-60 mV/decade switching by using the negative capacitance (NC) effect in ferroelectric-gate FETs. However, the physical picture is not yet understood. In this paper, an alternative physical picture for emerging NC is proposed and the development of the NC stage at the ferroelectric/semiconductor hetero-junction is described. Proposed physical picture is based on two factors, 1. "decrease in an additional voltage originated from the depolarization field by surface potential of semiconductor" and 2. "Change in the distribution ratio of gate voltage (V G ) to voltage applied to the ferroelectric layer (V F ) and surface potential of the semiconductor (ψ S ) due to the capacitance change of semiconductor." With considering these two essential phenomena, time-resolved simulations of the NC stage emerging at the ferroelectric/semiconductor hetero-junction were carried out. This NC phenomena expressed by the negative differential of the D F for the V F , i.e. (D F /V F <0), emerging in the MFS (metal/ferroelectric/semiconductor) capacitor without inserting dielectric layer, are dynamically simulated to discuss the proposed NC process. The simulation results clearly reveal that the NC stage is originated from the existence of additional voltage caused by the depolarization field by surface potential of semiconductor originated from the existence of remanent polarization of ferroelectric layer, and change in the capacitance of the semiconductor during polarization switching. The different physical picture from steady-state NC and transient NC can be clearly shown.

    DOI： 10.1063/1.5075516

  • The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO<inf>2</inf>-based films Reviewed

    Kenshi Takada, Yuki Saho, Takeshi Yoshimura, Norifumi Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   2019（ ISSN:0021-4922 ）

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    Publishing type：Research paper (international conference proceedings)  

    © 2019 The Japan Society of Applied Physics. To investigate the effects of small amounts of oxygen on the crystal growth process and structural changes in HfO2-based films, film was deposited on a Si substrate using HfO2 and ZrO2 targets via RF magnetron co-sputtering with small amounts of added O2. Even when the deposition was carried out without heating, the most stable monoclinic phase mainly formed at O2 partial pressures above 1 mPa, where the sputtering maintained the oxide mode in the as-deposited state. With decreasing O2 partial pressure, the amorphous component increased. During the annealing process, the metastable tetragonal or orthorhombic phase crystallized when the amorphous film was deposited at a lower O2 partial pressure of 1 mPa. The volume fraction of the metastable phase decreased abruptly at an O2 partial pressure at which the sputtering mode changed from metal mode to oxide mode. These results indicate that the O2 partial pressure during deposition have an effect on the crystal growth process and causes structural changes in the film even after the annealing process.

    DOI： 10.7567/1347-4065/ab37cb

  • Piezoelectric energy harvesting from AC current-carrying wire Reviewed

    Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   2019（ ISSN:0021-4922 ）

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    © 2019 The Japan Society of Applied Physics. The magnetic field surrounding an AC current-carrying wire is a promising source for energy harvesting. In this study, an AC magnetic field energy harvester is developed based on the piezoelectric vibration energy harvester. A permanent magnet placed near the AC current-carrying wire vibrates by coupling with the AC magnetic field. The kinetic energy of the vibration can be converted by the piezoelectric effect. Theoretical analysis indicates that the harvester composed of a piezoelectric cantilever with a permanent magnet at the free end should be placed so that the magnet and the wire do not collide. Then, the harvester was fabricated using a piezoelectric bimorph cantilever with a mechanical quality factor of 66 and a generalized electromechanical coupling factor (K 2) of 3.1% and a neodymium magnet with a mass of 3.1 g. At an AC current of 5 Arms with a frequency of 50 Hz, an output of 1.3 mW was obtained.

    DOI： 10.7567/1347-4065/ab3e57

  • Fabrication of chemical composition controlled YbFe<inf>2</inf>O<inf>4</inf> epitaxial thin films Reviewed

    J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   2019（ ISSN:0021-4922 ）

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    Publishing type：Research paper (international conference proceedings)  

    © 2019 The Japan Society of Applied Physics. The crystal growth of YbFe2O4 requires oxidant-poor conditions, thus YbFe2O4 usually contains a large number of iron deficiencies even in the bulk single crystal. The use of an ArF laser for laser ablation is effective to reduce the amount of active oxygen species and a wide process window to form the YbFe2O4 epitaxial films becomes available. By using the widened process window and an iron-rich target, the chemical composition of the YbFe2O4 epitaxial thin films is successfully controlled. The effect of the iron composition on the charge ordering transition can be discussed using the nonlinear I-V behavior. The threshold electric field changes depending on the iron composition owing to the broadening of the 3-dimensional (3D) charge order region, which affects the robustness of the 3D charge order against an electric field in YbFe2O4 thin films.

    DOI： 10.7567/1347-4065/ab3959

  • The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO<inf>3</inf> thin films Reviewed

    Okamoto, N., Kariya, K., Yoshimura, T., Fujimura, N.

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   57 ( 11 )   2018.11

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  • Investigation of mechanical nonlinear effect in piezoelectric MEMS vibration energy harvesters Reviewed

    Aramaki, M., Izumi, K., Yoshimura, T., Murakami, S., Satoh, K., Kanda, K., Fujimura, N.

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   57 ( 11 )   2018.11

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  • Characterization of piezoelectric MEMS vibration energy harvesters using random vibration Reviewed

    Murakami, S., Yoshimura, T., Kanaoka, Y., Tsuda, K., Satoh, K., Kanda, K., Fujimura, N.

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   57 ( 11 )   2018.11

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  • Direct piezoelectric response in vinylidene fluoride-trifluoroethylene copolymer films Reviewed

    Matsushita, Y., Kanagawa, I., Yoshimura, T., Fujimura, N.

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   57 ( 11 )   2018.11

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  • Fabrication of Y doped HfO2 epitaxial films directly on (001) si substrate Reviewed

    Kamada, D., Takada, K., Yoshimura, T., Fujimura, N.

    Zairyo/Journal of the Society of Materials Science, Japan 雑誌   67 ( 9 )   2018.09

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  • Systematic Study of Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Acid Treatment Reviewed

    Kiriya, D., Hijikata, Y., Pirillo, J., Kitaura, R., Murai, A., Ashida, A., Yoshimura, T., Fujimura, N.

    Langmuir 雑誌   34 ( 35 )   2018.09

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  • Reaction of N,N'-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide Reviewed

    Fukui, A., Miura, K., Ichimiya, H., Tsurusaki, A., Kariya, K., Yoshimura, T., Ashida, A., Fujimura, N., Kiriya, D.

    AIP Advances 雑誌 AIP Publishing LLC   8 ( 5 )   2018.05

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  • Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film Reviewed

    Ichimiya, H., Takinoue, M., Fukui, A., Miura, K., Yoshimura, T., Ashida, A., Fujimura, N., Kiriya, D.

    ACS Nano 雑誌 American chemical society   2018.05

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  • Investigation of piezoelectric energy harvesting from human walking Reviewed

    Kakihara, R., Kariya, K., Matsushita, Y., Yoshimura, T., Fujimura, N.

    Journal of Physics: Conference Series 雑誌   1052 ( 1 )   2018.01

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  • Direct piezoelectric properties of BiFeO<inf>3</inf> epitaxial films grown by combinatorial sputtering Reviewed

    Yoshimura, T., Kariya, K., Okamoto, N., Aramaki, M., Fujimura, N.

    Journal of Physics: Conference Series 雑誌   1052 ( 1 )   2018.01

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  • Photoelectron spectroscopic study on monolayer pentacene thin film/ polar ZnO single crystal hybrid interface Reviewed

    Takahiro Nagata, Tatsuru Nakamura, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, andYutaka Wakayama

    Applied Physics Express, 雑誌 The Japan Society of Applied Physics   10   2017.09

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  • Origin of the photoinduced current of strongly correlated YMnO3 ferroelectric epitaxial films Reviewed

    Kohei Miura, Lejun Zhang, Daisuke Kiriya, Atsushi Ashida, Takeshi Yoshimura and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   56 ( 10s )   2017.09

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  • Development of piezoelectric bistable energy harvester based on buckled beam with axially constrained end condition for human motion Reviewed

    Ali M. Eltanany, Takeshi Yoshimura, Norifumi Fujimura, Mohamed R. Ebied and Mohamed G. S. Ali

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   56 ( 10s )   2017.09

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  • Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition Reviewed

    Atsushi Ashida, Shunsuke Sato, Takeshi Yoshimura, Norifumi Fujimura,

    Journal of Crystal Growth, in press. 雑誌 ELSEVIER   468   245 - 248   2017.06

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  • Growth and ferroelectric properties of La and Al codoped BiFeO3 epitaxial films Reviewed

    Hirokazu Izumi,Takeshi Yoshimura,Norifumi Fujimura

    Journal of Applied Physics 雑誌 American Institute of Physics   121   2017.05

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  • Crystallographic polarity effect of ZnO on thin film growth of pentacene Reviewed

    Tatsuru Nakamura, Takahiro Nagata, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura and Yutaka Wakayama

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   56   2017.03

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  • High efficiency piezoelectric MEMS vibration energy harvesters using (100) oriented BiFeO3 Films Reviewed

    M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, and N. Fujimura

    Proc. of the 30th IEEE International Conference on Micro Electro Mechanical Systems 雑誌   829 - 832   2017.01

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  • Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs Reviewed

    Norifumi Fujimura, Takeshi Yoshimura

    Ferroelectric-Gate Field Effect Transistor Memories, 雑誌 Springer   2016.09

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  • Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system Reviewed

    Masaaki Aramaki, Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura

    Jpn. J. Appl. Phys 雑誌 The Japan Society of Applied Physics   55 ( 10TA16 )   1 - 5   2016.09

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  • Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films Reviewed

    Jin Hong Choi, Takeshi Yoshimura, and Norifumi Fujimura

    Jpn. J. Appl. Phys 雑誌 The Japan Society of Applied Physics   55 ( 10TA17 )   1 - 4   2016.09

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  • Direct measurements of electrocaloric effect in ferroelectrics using thin-film thermocouples Reviewed

    Yuji Matsushita, Atsushi Nochida, Takeshi Yoshimura, and Norifumi Fujimura

    Jpn. J. Appl. Phys 雑誌 The Japan Society of Applied Physics   55 ( 10TB04 )   1 - 4   2016.09

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  • Enhancement of piezoelectric properties of BiFeO3 films for vibration energy harvesting Reviewed

    T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami

    Proc. of the Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics, 雑誌   C - P   2015.11

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  • Direct measurement of electrocaloric effect in barium titanate thin films Reviewed

    Y. Matsushita, T. Yoshimura and N. Fujimura

    Proc. of The Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌   C - P   2015.11

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  • Piezoelectric MEMS vibrational energy harvester using BiFeO3 films Reviewed

    T. Yoshimura, S. Murakami, K. Kariya, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   PL - 1   2015.11

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  • Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple Reviewed

    Y. Matsushita, T. Yoshimura, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   EL - 12   2015.11

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  • Growth and characterization of (1-x)BifeO3-x(Bi0.5,K0.5)TiO3 thin films Reviewed

    Jin Hong Choi, T. Yoshimura, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   54 ( 10NA14 )   1 - 4   2015.09

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  • Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking Reviewed

    Ali M. Eltanany, T. Yoshimura, N. Fujimura, Nour Z. Elsayed, Mohamed R. Ebied and Mohamed G. S. Ali

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   54, ( 10ND02 )   1 - 5   2015.09

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  • Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures Reviewed

    H. Yamada, T. Yoshimura and N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   117, ( 234101 )   1 - 5   2015.06

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  • The output power of piezpelectric MEMS vibration energy harvesters under random oscillations Reviewed

    K. Kariya, T. Yoshimura, S. Murakami, and N. Fujimura

    Journal of Physics: Conference Series 雑誌 IOP Publishing Ltd   557   1742 - 6596   2014.11

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  • Enhancement of piezoelectric properties of (100)-orientated BiFeO3 films on (100)LaNiO3/Si Reviewed

    Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   53   2014.09

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  • Piezoelectric properties of (100) orientated BiFeO3 thin films on LaNiO3 Reviewed

    Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   53   2014.08

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  • Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition Reviewed

    T. Nakamura, T. Yoshimura, A. Ashida, N. Fujimura

    Thin Solid Films 雑誌 Elsevier   55 ( 9 )   2014.05

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  • Correlation between the intra-atomic Mn3+ photoluminescence and antiferromagnetic transition in an YMnO3 epitaxial film Reviewed

    Masaaki Nakayama, Yoshiaki Furukawa, Kazuhiro Maeda, Takeshi Yoshimura, Hiroshi Uga, Norifumi Fujimura

    Applied Physics Express 雑誌 The Japan Society of Applied Physics   7   2014.02

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  • Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, T. Yoshimura, K. Wakazono,A. Ashida,N. Fujimura

    Thin Solid Films 雑誌 Elsevier   550   738 - 741   2014.01

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  • Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO3 ferroelectric film Reviewed

    S Murakami, T Yoshimura, K Satoh, K Wakazono, K Kariya and N Fujimura

    Journal of Physics:Conference Series 雑誌 Elsevier   476   2013.12

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  • Enhancement of Direct Piezoelectric Properties of Domain-Engineered(100)BiFeO3 Films Reviewed

    Takeshi Yshimura,Katsuya Ujimoto,Yusaku Kawahara,keisuke Wakazono,Kento Kariya,Norifumi Fujimura,Syuichi Murakami

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   52   2013.09

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  • Effect of the annealing temperature of P(VDF/TrFE) thin films on their ferroelectric properties Reviewed

    Yoshiki Yachi,Takeshi Yoshimura,Norifumi Fujimura

    Journal of the Korean Physical Society 雑誌 The Korean Physical Society   62 ( 7 )   1065 - 1068   2013.07

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  • Effects of La substitution for BiFeO3 epitaxial thin films Reviewed

    K.Wakazono,Y. Kawahara,K. Ujimoto,T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society 雑誌 The Korean Physical Society   62 ( 7 )   1069 - 1072   2013.07

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  • Piezoelectric Vibrational Energy Harvester Using Lead-Free Ferroelectric BiFeO3 Films Reviewed

    Takeshi Yoshimura,Shuichi Murakami,Keisuke Wakazono,Kento Kariya,Norifumi Fujimura

    Appl. Phys. Express 雑誌 The Japan Society of Applied Physics   6   2013.05

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  • 強誘電体ゲート　ＴＦＴのインピーダンス解析と測定ポイント

    藤村紀文, 吉村武

    電気化学/インピーダンス測定のノウハウと正しいデータ解釈 雑誌 技術情報協会   531 - 534   2013.05

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  • Effect of Target Surface Microstructure on Morphological and Electrical Properties of Pulsed-Laser-Deposited BiFeO3 Epitaxial Thin Films Reviewed

    Katsuya Ujimoto,Takeshi Yoshimura,Atsushi Ashida,Norifumi Fujimura

    Jpn J. Appl. Phy 雑誌 The Japan Society of Applied Physics   52 ( 4 )   2013.04

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  • Orientation control of ZnO films deposited using nonequilibrium atmospheric pressure N2/O2 plasma Reviewed

    Yukinori Nose,Tatsuru Nakamura,Takeshi Yoshimura,Atsushi Ashida,Tsuyoshi Uehara,Norifumi Fujimura

    Jpn. J. Appl. Phys., 雑誌 The Japan Society of Applied Physics   52 ( 1 )   2013.01

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  • Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO3 ferroelectric film Reviewed

    S Murakami, T Yoshimura, K Satoh, K Wakazono, K Kariya and N Fujimura

    Journal of Physics:Conference Series 雑誌 Elsevier   476   2013.01

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  • Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N2/O2 Plasma Reviewed

    Yukinori Nose,Tatsuru Nakamura,Takeshi Yoshimura,Atsushi Ashida,Tsuyoshi Uehara,Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   52   2013.01

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  • Field Effect of Magnetic Semiconductor Si:Ce Thin Films Using Organic Ferroelectrics Reviewed

    Yusuke Miyata,Hiroshi Takata,Yoshitaka Okuyama,Takeshi Yoshimura,Norifumi Fujimura

    J.Vac.Soc.Jpn 雑誌 The Vacuum Society of Japan   56 ( 4 )   136 - 138   2013.01

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  • Fabrication and Electric Properties of Ferroelectric-Gate Thin Film Transistors with Nano-Channel Reviewed

    Yuhei Nomura ,Takeshi Yoshimura,Norifumi Fujimura

    J.Vac.Soc.Jpn 雑誌 The Vacuum Society of Japan   56 ( 5 )   172 - 175   2013.01

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  • Investigation of gas sensing characteristics of TiO2 nanotube channel field effect transistor Reviewed

    Masayuki Ishii, Masahiro Terauchi, Takeshi Yoshimura, Tadachika Nakayama, Norifumi Fujimura

    Jpn. J. Appl. Phys., 雑誌 The Japan Society of Applied Physics   51 ( 11 )   11PE10 1 - 3   2012.11

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  • Effect of ferroelectric polarization on carrier transport in controlled polarization type ferroelectric gate field-effect transistors with P(VDF-TeFE)/ZnO heterostructure Reviewed

    Hiroaki　Yamada, Takeshi Yoshimura , Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   51 ( 11 )   2012.11

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  • 大気圧非平衡酸窒素プラズマを用いたZnO薄膜の低温形成とその成長形態 Reviewed

    野瀬幸則・吉村　武・芦田　淳・上原　剛・藤村紀文

    材料 雑誌 日本材料学会   61   756 - 759   2012.09

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  • Control of crystal structure of BiFeO3 epitaxial thin films by the growth condition and piezoelectric properties Reviewed

    Yusaku Kawahara, Katsuya Ujimoto, Takeshi Yoshimura, Norifumi　Fujimura

    Jpn. J. Appl. Phys., 雑誌 The Japan Society of Applied Physics   51 ( 9 )   09LB04 1 - 5   2012.09

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  • 誘電泳動により作製したTiO2ナノチューブ電界効果トランジスタの電気伝導 Reviewed

    石井将之・寺内雅裕・吉村　武・中山忠親・藤村紀文

    材料 雑誌 日本材料学会   61   766 - 770   2012.09

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  • Growth temperature and thickness dependences of crystal and micro domain structures of BiFeO3 epitaxial films Reviewed

    H. Yamada, T. Yoshimura, N. Fujimura

    Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012 雑誌 ＩＥＥＥ   2012.07

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  • Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel Reviewed

    H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura

    Mater. Res. Soc. Symp. Proc., 雑誌 MRS   1430   mrss12 - 1430   2012.04

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  • Direct Piezoelectric Properties of (100) and (111) BiFeO3 Epitaxial Thin Films Reviewed

    K. Ujimoto, T. Yoshimura, A. Ashida and N. Fujimura

    Applied Physics Letters 雑誌 American Institute of Physics   100 ( 10 )   2012.03

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  • Electrical Properties of Sol-Gel Derived PbLaZrTiOx Capacitors with Nonnoble Metal Oxide Top Electrodes Reviewed

    Yoko Takada,Toru Tsuji,Naoki Okamoto,Takeyasu Saito,K. Kondo,Takeshi Yoshimura,Norifumi Fujimura,Koji Higuchi,Akira Kitajima,andAkihiro Oshima

    ECS Transactions 雑誌 ECS   50 ( 34 )   43 - 48   2012.01

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  • Characterization of Field Effect Transistor with TiO2 Nanotube Channel Fabricated by Dielecrophoresis Reviewed

    M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama N. Fujimura

    Materials Science and Engineering 雑誌 Elsevier   18   2011.10

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  • Characterization of Direct Piezoelectric Properties for Vibration Energy Harvesting Reviewed

    T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida and N. Fujimura

    Materials Science and Engineering 雑誌 Elsevier   18   2011.10

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  • Effect of Ferroelectric Polarization Domain Structure　on Electronic Transport Properties of Ferroelectric/ZnO Heterostructure Reviewed

    H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   50 ( 9 )   2011.09

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  • Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, H. Izumi, T. Yoshimura, A. Ashida, N. Fujimura

    Materials Science and Engineering 雑誌 Elsevier   18   2011.09

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  • Characterization of Direct Piezoelectric Effect in 31 and 33 modes for Application to Vibration Energy Harvester Reviewed

    H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   50 ( 9 )   2011.09

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  • Fine-structured TiO 2 ceramic patterns on the ceramic surface fabricated by replication Reviewed

    Kim, H.D., Nakayama, T., Hong, B.J., Imaki, K., Yoshimura, T., Suzuki, T., Suematsu, H., (...), Niihara, K.

    Materials Science and Engineering 雑誌 Elsevier   20 ( 1 )   2011.04

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  • Impedance analysis of controlled-polarization-type ferroelectric-gate thin film transistor using resistor-capacitor lumped constant circuit Reviewed

    T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   50 ( 4 )   2011.04

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  • Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration Reviewed

    T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima A. Oshima

    Electronics Letters 雑誌 IET   47 ( 8 )   486 - 487   2011.04

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  • Direct Piezoelectricity of PZT Films and Application to Vibration Energy Harvesting Reviewed

    H. Miyabuchi, T. Yoshimura, S. Murakami and N. Fujimura

    Journal of the Korean Physical Society 雑誌 The Korean Physical Society   59 ( 3 )   2524 - 2527   2011.04

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  • Electronic Transport Property of a YbMnO3/ZnO Heterostructure Reviewed

    H. Yamada, T. Fukushima, T. Yoshimura, and N. Fujimura

    Journal of the Korean Physical Society 雑誌 The Korean Physical Society   58 ( 4 )   792 - 796   2011.04

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  • Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films Reviewed

    T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Crystal Growth 雑誌 Elsevier   318 ( 1 )   516 - 518   2011.03

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  • Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition method Reviewed

    T. Saito, K. Izumi, Y. Hirota, N. Okamoro, K. Kondo, T. Yoshimura, N. Fujimura

    Electrochemical Society Transactions(2009) 雑誌 The Electrochemical Society   25 ( 8 )   693 - 698   2010.10

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  • Local piezoelectric and conduction properties of BiFeO3 epitaxial thin films Reviewed

    K.Ujimoto, T.Yoshimura, N.Fujimura

    Japanese Journal of Applied Physics, Ferroelectric Materials Their Applications 雑誌 The Japan Society of Applied Physics   49 ( 9 )   2010.09

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  • Ferroelectric properties of magnetoferroelectric YMnO3 epitaxial films at around the neel temperature Reviewed

    T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura

    Key Engineering Materials 雑誌 Trans Tech Publications   445   144 - 147   2010.07

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  • Fabrication and magneto-transport properties of Zn0.88-xMgxMn0.12O/ZnO heterostructures grown on ZnO single-crystal substrates Reviewed

    K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura

    Proceeding, Advances in Science and Technology(2010) 雑誌 Trans Tech Publications   75   1 - 8   2010.06

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  • Dielectric behavior of YMnO3 epitaxial thin film at around magnetic phase transition temperature Reviewed

    K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura

    Proceeding, Advances in Science and Technology(2010) 雑誌 Trans Tech Publications   67   176 - 181   2010.06

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  • ZnMnO/ZnOヘテロ構造の作製とその磁気輸送特性 (Fabrication and magneto-transport properties of ZnMnO/ZnO heterostructures) Reviewed

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    多元系機能材料研究会 平成２１年度活動報告書 雑誌 応用物理学会   2010.04

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  • Analysis of carrier modulation in channel of　ferroelectric-gate transistors having polar semiconductor Reviewed

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura

    Thin Solid Films(2010) 雑誌 Elsevier   518 ( 11 )   3026 - 3029   2010.03

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  • Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films Reviewed

    Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura

    Thin Solid Films(2010) 雑誌 Elsevier   518 ( 11 )   3097 - 3100   2010.03

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  • Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition Reviewed

    T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films(2010) 雑誌 Elsevier   518 ( 11 )   2971 - 2974   2010.03

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  • Control of cathodic potential for deposition of ZnO by constant-current electrochemical method Reviewed

    N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films(2010) 雑誌 Elsevier   518 ( 11 )   2957 - 2960   2010.03

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  • Direct piezoelectric properties of Mn-doped ZnO epitaxial films Reviewed

    T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura

    Japanese Journal of Applied Physics(2010) 雑誌 The Japan Society of Applied Physics   49 ( 2 )   2010.02

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  • Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films Reviewed

    Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura

    Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology(2009) 雑誌 AVS   84 ( 5 )   618 - 621   2009.12

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  • Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Physical Review B(2009) 雑誌 American Physical Society   80 ( 12 )   2009.09

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  • Polarization switching behavior of YMnO3 thin film at around magnetic phase transition temperature Reviewed

    K. Maeda, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics(2009) 雑誌 The Japan Society of Applied Physics   48 ( 9 )   2009.09

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  • Electron transport properties of Zn0.88Mn0.12O/ZnO modulation-doped heterostructures Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Vacuum Science & Technology B(2009) 雑誌 The Vacuum Society of Japan   27 ( 3 )   1760 - 1764   2009.05

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  • Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction Reviewed

    T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura

    Japanese Journal of Applied Physics(2009) 雑誌 The Japan Society of Applied Physics   48 ( 3 )   2009.03

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  • Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering Reviewed

    H. Fukumura, N. Hasuike, H. Harima , K. Kisoda , K. Fukae , T. Yoshimura , N. Fujimura

    Jounal of Physics-Condensed Matter(2009) 雑誌 Elsevier   21 ( 6 )   2009.02

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  • Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura

    Journal of Crystal Growth(2009) 雑誌 Elsevier   311 ( 4 )   1117 - 1122   2009.02

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  • Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering Reviewed

    H. Fukumura, N. Hasuike, H. Harima , K. Kisoda , K. Fukae , T. Yoshimura , N. Fujimura

    JOURNAL OF PHYSICS-CONDENSED MATTER 雑誌 Elsevier   21   2009.01

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  • Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor Reviewed

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   47   8874 - 8879   2008.12

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  • Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor Reviewed

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura

    Japanese Journal of Applied Physics(2008) 雑誌 The Japan Society of Applied Physics   47 ( 12 )   8874 - 8879   2008.12

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  • Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (0001) single-crystal substrates Reviewed

    K. Masuko, A. Ashida T. Yoshimura and N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   103   2008.12

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  • Spin-dependent transport in a ZnMnO/ZnO heterostructure Reviewed

    K. Masuko, A. Ashida T. Yoshimura and N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   103   2008.12

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  • Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films Reviewed

    T. Oshio, K. Masuko, A. Ashida T. Yoshimura and N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   103   2008.12

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  • Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films Reviewed

    S. Sakamoto, T. Oshio, A. Ashida T. Yoshimura and N. Fujimura

    Applied Surface Science 雑誌 Elsevier   254   6248 - 6251   2008.12

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  • Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si Reviewed

    D. Shindo, T. Yoshimura and N. Fujimura

    Applied Surface Science 雑誌 Elsevier   254   6218 - 6221   2008.12

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  • Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura and N. Fujimura

    Thin Solid Films 雑誌 Elsevier   516   5785 - 5789   2008.12

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  • Effects of Oxygen Annealing on Dielectric Properties of LuFeCuO4 Reviewed

    Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   47   8464 - 8467   2008.12

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  • Effects of Oxygen Annealing on Dielectric Properties of LuFeCuO4 Reviewed

    Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori

    Japanese Journal of Applied Physics(2008) 雑誌 The Japan Society of Applied Physics   47 ( 11 )   8464 - 8467   2008.11

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  • Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films Reviewed

    S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura, N. Fujimura

    Applied Surface Science(2008) 雑誌 Elsevier   254 ( 19 )   6248 - 6251   2008.07

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  • Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura,N. Fujimura

    Thin Solid Films(2008) 雑誌 Elsevier   516 ( 17 )   5785 - 5789   2008.07

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  • Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si Reviewed

    D. Shindo, T. Yoshimura, N. Fujimura

    Applied Surface Science(2008) 雑誌 Elsevier   254 ( 19 )   6218 - 6221   2008.07

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  • Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O3 Thin Films Reviewed

    K. Fukae, T. Takahashi, T. Yoshimura and N. Fujimura

    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 雑誌 IEEE   1056 - 1060   2008.05

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  • Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films Reviewed

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Applied Physics(2008) 雑誌 AIP Publishing LLC   103 ( 9 )   2008.05

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  • Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O3 Thin Films Reviewed

    K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control(2008) 雑誌 IEEE   55 ( 5 )   1056 - 1060   2008.05

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  • Effects of Spontaneous and Piezoelectric Polarizations on Carrier Confinement at the Zn0.88Mn0.12O/ZnO Interface Reviewed

    K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura, N. Fujimura

    Physica Status Solidi (c)(2008) 雑誌 Wiley-VCH   5 ( 9 )   3107 - 3109   2008.05

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  • Electro-Optic Property of ZnO:Mn Epitaxial Films Reviewed

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Physica Status Solidi (c)(2008) 雑誌 Wiley-VCH   5 ( 9 )   3110 - 3112   2008.05

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  • Spin-dependent transport in a ZnMnO/ZnO heterostructure Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Applied Physics(2008) 雑誌 AIP Publishing LLC   103 ( 7 )   2008.04

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  • Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (000(1)over-bar) single-crystal substrates(2008) Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   103 ( 4 )   2008.02

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  • Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO3 Epitaxial Thin Films Reviewed

    K. Maeda, T. Yoshimura and N. Fujimura

    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 雑誌 IEEE   54 ( 12 )   2641 - 2644   2007.12

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  • Conduction Characteristics of Charge Ordering Type Ferroelectrics, YFe2O4-? Reviewed

    K. Imamura, Y. Horibe, T. Yoshimura, N. Fujimura, S. Mori, N. Ikeda

    Materials Research Society Symposium Proceedings 雑誌 MRS   966E   07 - 27   2007.11

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  • Magnetic and Ferroelectric Properties of YMnO3 Epitaxial Thin Films Reviewed

    K. Maeda, T. Yoshimura and N. Fujimura

    Materials Research Society Symposium Proceedings 雑誌 MRS   966E   03 - 01   2007.11

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  • Raman scattering studies on multiferroic YMnO3 Reviewed

    H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura and N. Fujimura

    Journal of Physics -Condensed Matter 雑誌 Elsevier   19 ( 36 )   2007.09

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  • Effect of Bi substitution on the Magnetic and Dielectric Properties of Epitaxially-grown Fe0.3Zr0.7O3-δ Thin Films on SrTiO3 substrates Reviewed

    T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda and K. Morii

    Journal of Physics and Chemistry of Solids 雑誌 Elsevier   68 ( 8 )   1515 - 1521   2007.08

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  • Spin-coupled phonons in multiferroic YbMnO3 epitaxial films by Raman scattering Reviewed

    H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura and N. Fujimura

    Journal of Physics: Conference Series 雑誌 Elsevier   92   2007.06

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  • Magnetic Frustration Behavior of Ferroelectric Ferromagnet YbMnO3 Epitaxial Films Reviewed

    N. Fujimura, T. Takahashi T. Yoshimura and A. Ashida

    Journal of Applied Physics 雑誌 AIP Publishing LLC   101 ( 9 )   2007.05

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  • Magnetic properties of low-temperature grown Si : Ce thin films on (001) Si substrate Reviewed

    T. Terao, Y. Nishimura, D. Shindo, T. Yoshimura, A. Ashida, N. Fujimura

    Journal of Magnetism and Magnetic Materials 雑誌 Elsevier   310 ( 2 )   726 - 728   2007.03

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  • Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate Reviewed

    K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura

    Journal of Magnetism and Magnetic Materials 雑誌 Elsevier   310 ( 2 )   711 - 713   2007.03

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  • Multiferroic Behaviors of YMnO3 and YbMnO3 Epitaxial Films (INVITED PAPER) Reviewed

    N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida and T. Yoshimura

    Phil.l Mag. Lett. 雑誌 Taylor & Francis   87 ( 3-4 )   193 - 201   2007.02

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  • The Comparison of the Growth Models of Silicon Nitride Ultra-Thin Films Fabricated Using Atmospheric Pressure Plasma and Radio Frequency Plasma Reviewed

    M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   101   2007.01

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  • Effect of Additional Oxygen for the Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure Reviewed

    R. Hayakawa, M. Nakae, T. Yoshimura, A. Ashida, N. Fujimura and T. Uehara

    Jpn. J. Appl. Phys. 雑誌 The Japan Society of Applied Physics   45   9025 - 9028   2006.12

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  • Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure Reviewed

    R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa and Y. Teraoka

    Journal of Applied Physics 雑誌 AIP Publishing LLC   100   2006.10

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  • Single-wall Carbon Nanotube Field Effect Transistors with Non-volatile Memory Operation Reviewed

    T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y. Nakayama

    Jpn. J. Appl. Phys. （Ｌｅｔｔｅｒ） 雑誌 The Japan Society of Applied Physics   45   1036 - 1038   2006.10

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  • Growth and Ferromagnetic Properties of Ferroelectric YbMnO3 Thin Films Reviewed

    T. Takahashi, T. Yoshimura and N. Fujimura

    Jpn. J. Appl. Phys. 雑誌 The Japan Society of Applied Physics   45   7329 - 7331   2006.09

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  • Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure Reviewed

    R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura

    Thin Solid Films 雑誌 Elsevier   506-507   423 - 426   2006.05

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  • Mn Doping Effects on Dielectric Properties of ZnO Epitaxial Films Reviewed

    T. Oshio, A. Ashida, T. Yoshimura and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   31   2006.04

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  • Fabrication of YMnO3 Epitaxial Thin Films Films and the Magnetic-Ferroelectric Correlation Phenomena Reviewed

    K. Maeda, N. Shigemitsu,T. Yoshimura and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   31   2006.04

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  • Electric and Magnetic Properties of Ba(Co,Mn)O3-δ Epitaxial thin films Reviewed

    T. Inoue, T. Matsui, H.Tsuda, T. Yoshimura, N. Fujimura and K. Morii

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   31   2006.04

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  • The Nitridation Process of Silicon with Atmospheric Pressure Plasma Reviewed

    M. Nakae, R. Hayakawa, T. Yoshimura, T. Uehara and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   31   2006.04

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  • Electrical Characterization of YMnO3-based Metal-Ferroelectric-Insulator-Semiconductor Capacitor by Novel Method Reviewed

    T.Yoshimura, D Ito, K.Hratake, A. Ashida and N.Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   30   233 - 236   2005.09

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  • Low-Temperature Formation of Silicon Nitride Films using Nitrogen Plasma near Atmospheric Pressure Reviewed

    R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   30   217 - 220   2005.09

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  • Comparison of Reactivity of Active Nitrogen Species Generated in RF Plasma and Atmospheric Pressure Plasma Reviewed

    M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   30   225 - 227   2005.09

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  • Epitaxial Growth of ZnO Films on Ferroelectric YMnO3 Deposited by PLD Reviewed

    R. Arai, N. Shigemitsu, K. Masuko, T. Oshio, T. Yoshimura, A. Ashida, and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   30   241 - 244   2005.09

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  • Low Temperature Growth of YMnO3/Y2O3/Si capacitor Reviewed

    K. Haratake, N. Shigemitsu, T. Yoshimura, A. Ashida and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   30   237 - 240   2005.09

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  • Influence of Space Charge of the Dielectric Properties of ZnO:Mn Epitaxial Films Reviewed

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura and N. Fujimura

    Transactions of the Materials Research Society of Japan 雑誌 日本MRS   30   245 - 247   2005.09

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  • Low-Temperature Growth and Characterization of Epitaxial YMnO3/Y2O3/Si MFIS Capacitors with Thinner Insulator Layer Reviewed

    K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   44   6977 - 6980   2005.09

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  • Preparation and properties of ferroelectric-insulator-semiconductor junctions using YMnO3 thin films Reviewed

    N. Fujimura and T. Yoshimura

    Topics in Applied Physics 雑誌 Springer   98   199 - 218   2005.08

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  • Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida and N. Fujimura

    Journal of Applied Physics 雑誌 AIP Publishing LLC   97   2005.04

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  • Analysis of Nitrogen Plasma Generated by a Pulsed Plasma System Near Atmospheric Pressure Reviewed

    R. Hayakawa, T. Yoshimura, A. Ashida, and N. Fujimura, H. Kitahata, and M. Yuasa

    Journal of Applied Physics 雑誌 AIP Publishing LLC   96 ( 11 )   6094 - 6096   2004.12

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  • Formation of Silicon Oxynitride Films with Low Leakage Current Using N2/O2 Plasma near Atmospheric Pressure Reviewed

    R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   43   7853 - 7856   2004.11

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  • Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors Reviewed

    T. Yoshimura, D. Ito, H. Sakata, N. Shigemitsu, K. Haratake, and N. Fujimura

    Materials Research Society Symposium Proceedings 雑誌 MRS   784   9 - 79   2004.09

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  • Synthesis of Bi(FexAl1-x)O3 Thin Films by Pulsed Laser Deposition and Its Structural Characterization Reviewed

    M. Okada, T. Yoshimura, A. Ashida, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   43 ( 9B )   6609 - 6612   2004.09

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  • Pulsed-Laser-Deposited YMnO3 Epitaxial Films with Square Polarization-Electric Field Hysteresis Loop and Low-Temperature Growth Reviewed

    N. Shigemitsu, H Sakata, D. Ito, T. Yoshimura, A. Ashida, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   43 ( 9B )   6613 - 6616   2004.09

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  • 高いキュリー温度を有する強誘電体エピタキシャル薄膜の圧電特性 Reviewed

    吉村　武、Susan Trolier-McKinstry

    電気学会論文誌E(センサ・マイクロマシン準部門誌) 雑誌 日本電気学会   124   117 - 123   2004.04

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  • P-E Measurements for Ferroelectric Gate Capacitors Reviewed

    T. Yoshimura and N. Fujimura

    Integrated Ferroelectrics 雑誌 Taylor & Francis   61   59 - 64   2004.02

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  • Polarization Hysteresis Loops of Ferroelectric Gate Capacitors Measured by Sawyer-Tower Circuit Reviewed

    T. Yoshimura and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   42 ( 8B )   6011 - 6014   2003.09

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  • Improvement of Surface Morphology and the Dielectric Property of YMnO3 Films Reviewed

    H. Sakata, D. Ito, T. Yoshimura, A. Ashida, and N. Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   42 ( 9B )   6003 - 6006   2003.09

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  • Influence of Schottky and Poole-Frenkel Emission on the Retention Property of YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors Reviewed

    D. Ito, N. Fujimura, T. Yoshimura, and T. Ito

    Journal of Applied Physics 雑誌 AIP Publishing LLC   94 ( 6 )   4036 - 4041   2003.09

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  • Ferromagnetic and Ferroelectric Behaviors of A-site Substituted YMnO3-based Epitaxial Thin Films Reviewed

    N. Fujimura, H. Sakata, D. Ito, T. Yoshimura, and T. Ito

    Journal of Applied Physics 雑誌 AIP Publishing LLC   93 ( 10 )   6990 - 6992   2003.05

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    Kind of work：Joint Work  

  • Ferroelectric Properties of YMnO3 Epitaxial Films for Ferroelectric-Gate Field Effect Transistors Reviewed

    D. Ito, N. Fujimura, T. Yoshimura, and T. Ito

    Journal of Applied Physics 雑誌 AIP Publishing LLC   93 ( 9 )   5563 - 5567   2003.05

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    Kind of work：Joint Work  

  • Dielectric and Transverse Piezoelectric Properties of Sol-Gel-Derived (001) Pb[Yb1/2Nb1/2]O3?PbTiO3 Epitaxial Thin Films Reviewed

    Q. F. Zhou, Q. Q. Zhang, T. Yoshimura, and S. Trolier-McKinstry

    Applied Physics Letters 雑誌 American Institute of Physics   82 ( 26 )   4767 - 4769   2003.01

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    Kind of work：Joint Work  

  • Growth and Piezoelectric Properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 Epitaxial Films Reviewed

    T. Yoshimura and S. Trolier-McKinstry

    Journal of Applied Physics 雑誌 AIP Publishing LLC   92 ( 7 )   3979 - 3984   2002.10

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    Kind of work：Joint Work  

  • Piezoelectric films for MEMS applications Reviewed

    F. Xu, R.A. Wolf, T. Yoshimura, and S. Trolier-McKinstry

    11th International Symposium on Electrets Proceedings 雑誌 IEEE   386- 396   2002.09

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    Kind of work：Joint Work  

  • Phase Development and Electrical Properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 Epitaxial Films Reviewed

    T. Yoshimura and S. Trolier-McKinstry,

    Integrated Ferroelectrics 雑誌 Taylor & Francis   50   33 - 42   2002.09

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    Kind of work：Joint Work  

  • Growth and Electrical Properties of (001) BiScO3-PbTiO3 (50/50) Epitaxial Films Reviewed

    T. Yoshimura and S. Trolier-McKinstry

    Applied Physics Letters 雑誌 American Institute of Physics   81 ( 11 )   2065 - 2066   2002.09

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    Kind of work：Joint Work  

  • Ferroelectric and Piezoelectric Properties of Epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 Films Reviewed

    T. Yoshimura and S. Trolier-McKinstry

    Materials Research Society Symposium Proceedings 雑誌 MRS   655   2001.09

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    Kind of work：Joint Work  

  • Transverse Piezoelectric Properties of Epitaxial Pb(Yb1/2Nb1/2)O3-PbTiO3 (50/50) Films Reviewed

    T. Yoshimura and S. Trolier-McKinstry

    Journal of Crystal Growth 雑誌 Elsevier   229 ( 1 )   445 - 449   2001.01

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    Kind of work：Joint Work  

  • Evaluation of Ferroelectricity in MFIS Type Capacitor Using Pulsed C-V Measurement Reviewed

    N. Fujimura, T. Yoshimura, D. Ito, and T. Ito

    Symposia Proceedings of Materials Research Society 雑誌 MRS   596   407 - 412   2000.09

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    Kind of work：Joint Work  

  • Improvement of Y2O3/Si interface for FeRAM Application Reviewed

    D. Ito, T. Yoshimura, N. Fujimura, and T. Ito

    Applied Surface Science 雑誌 Elsevier   159-160   138 - 142   2000.06

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    Kind of work：Joint Work  

  • Characterization of Ferroelectricity in Metal/Ferroelectric/Insulator/Semiconductor Structure by Pulsed C-V Measurement; Ferroelectricity in YMnO3/Y2O3/Si Structure Reviewed

    T. Yoshimura, N. Fujimura, D. Ito, and T. Ito

    Journal of Applied Physics 雑誌 AIP Publishing LLC   87 ( 7 )   3444 - 3449   2000.04

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    Kind of work：Joint Work  

  • YMnO3 and YbMnO3 Thin Films for FET type FeRAM Application Reviewed

    N. Fujimura, T. Yoshimura, D. Ito, and T. Ito

    Materials Research Society Symposium Proceedings 雑誌 MRS   574   237 - 242   1999.09

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    Kind of work：Joint Work  

  • Detailed C-V Analysis for YbMnO3/Y2O3/Si Reviewed

    T. Yoshimura, N. Fujimura, D. Ito, and T. Ito

    Materials Research Society Symposium Proceedings 雑誌 MRS   574   359 - 365   1999.09

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    Kind of work：Joint Work  

  • Electrical Characterization of Ferroelectric YMnO3 Films for MF(I)S-FET Application Reviewed

    N. Fujimura, T. Yoshimura, and T. Ito

    Symposia Proceedings, The 11th International Symposium on Application of Ferroelectrics 雑誌 IEEE   98CH36245   1998.09

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    Kind of work：Joint Work  

  • Effect of Stoichiometry and A-site Substitution on the Electrical Properties of Ferroelectric YMnO3 Reviewed

    T. Shimura, N. Fujimura, S. Yamamori, T. Yoshimura, and T. Ito

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   37 ( 9B )   5280 - 5284   1998.09

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    Kind of work：Joint Work  

  • Ferroelectric Properties of c-Oriented YMnO3 Thin Films Deposited on Si Substrates Reviewed

    T. Yoshimura, N. Fujimura, and T. Ito

    Applied Physics Letters 雑誌 American Institute of Physics   73 ( 3 )   414 - 416   1998.07

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    Kind of work：Joint Work  

  • Fabrication of YMnO3 Thin Films on Si Substrates by a Pulsed Laser Deposition Method Reviewed

    T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tukui, K. Kawabata, and T. Ito

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   36 ( 9B )   5921 - 5924   1997.09

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    Kind of work：Joint Work  

  • YMnO3 Thin Films Prepared from Solutions for Non Volatile Memory Device Reviewed

    N. Fujimura, H. Tanaka, H. Kitahata, K. Tadanaga, T. Yoshimura, T. Ito, and T. Minami

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   36 ( 12A )   1601 - 1603   1997.09

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    Kind of work：Joint Work  

  • Growth and Properties of YMnO3 Thin Films for Nonvolatile Memories Reviewed

    T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tukui, K. Kawabata, and T. Ito

    Journal of the Korean Physical Society 雑誌 The Korean Physical Society   32 ( 4 )   1632 - 1635   1997.09

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    Kind of work：Joint Work  

  • Formation of YMnO3 Films Directly on Si Substrate Reviewed

    N. Aoki, N. Fujimura, T. Yoshimura, and T. Ito

    Journal of Crystal Growth 雑誌 Elsevier   174 ( 1-4 )   796 - 800   1997.04

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    Kind of work：Joint Work  

  • The Initial Stage of BaTiO3 Epitaxial Films on Etched and Annealed SrTiO3 Substrates Reviewed

    T. Yoshimura, N. Fujimura, and T. Ito

    Journal of Crystal Growth 雑誌 Elsevier   174 ( 1-4 )   790 - 795   1997.04

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    Kind of work：Joint Work  

  • Growth Mechanism of YMnO3 Film as a New Candidate for Nonvolatile Memory Devices Reviewed

    N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura, and T. Ito

    Journal of Applied Physics 雑誌 AIP Publishing LLC   80 ( 12 )   7084 - 7088   1996.12

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    Kind of work：Joint Work  

  • Fabrication of YMnO3 Films: New candidate for Non-Volatile Memory Devices Reviewed

    N. Fujimura, T. Ishida, T. Yoshimura, and T. Ito

    Materials Research Society Symposium Proceedings 雑誌 MRS   433   119 - 124   1996.09

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    Kind of work：Joint Work  

  • Epitaxially Grown YMnO3 film: New Candidate for Nonvolatile Memory Devices Reviewed

    N. Fujimura, T. Ishida, T. Yoshimura, and T. Ito

    Applied Physics Letter 雑誌 American Institute of Physics   69 ( 7 )   1011 - 1013   1996.08

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    Kind of work：Joint Work  

▼display all

Books and Other Publications

  • 環境発電ハンドブック

    吉村　武（ Role： Sole author）

    エヌ・ティー・エス  2021.10  （ ISBN:978-4-86043-748-0 C3 ）

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    Responsible for pages：263-269  

  • Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs Reviewed International journal

    Fujimura N.（ Role： Joint author）

    Topics in Applied Physics  2020  （ ISSN:03034216 ）

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    Book type：Scholarly book

    DOI： 10.1007/978-981-15-1212-4_8

    Scopus

  • Microenergy harvesting using BiFeO3 films Reviewed International journal

    Takeshi Yoshimura（ Role： Joint author）

    2019.02  （ ISBN:9780128145005 ）

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    Book type：Scholarly book

    Vibration energy harvesting has attracted much attention. In this chapter, the principles of a piezoelectric vibration energy harvester are summarized and the figure of merit (FOM) for the piezoelectric film is discussed. Then BiFeO3 is focused on as a promising piezoelectric film for this application. Various approaches to obtaining a high FOM on BiFeO3 films are introduced. Finally, the device performance of the harvester using BiFeO3 films is presented.

    DOI： 10.1016/B978-0-12-814499-2.00011-6

    Scopus

  • Microenergy harvesting using BiFeO3 films

    T. Yoshimura（ Role： Joint author）

    Elsevier   2019.02  （ ISBN:978-0-12-814499-2 ）

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    Responsible for pages：20  

  • Recent Design and Application of Energy Harvesting

    （ Role： Joint author）

    2015.10  （ ISSN: 978-4-7813-1092-3 ）

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    Responsible for pages：8  

MISC

  • Supersensitive Ultrasound Probes for Medical Imaging by Piezoelectric MEMS with Complemented Transmitting and Receiving Transducers

    Kenji Suzuki, Yuta Nakayama, Naoki Shimizu, Takashi Mizuno, Yoshio Mita, Takeshi Yoshimura

    IEEE International Ultrasonics Symposium, IUS   2020-September   2020.09（ ISSN:1948-5719 ） （ ISBN:9781728154480 ） （ eISSN:1948-5727 ）

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    We propose an innovative piezoelectric micromachined ultrasonic transducer (PMUT) with complemented transmitting (Tx) and receiving (Rx) elements. By separating the Tx and Rx elements, hence giving an independent degree of freedom design to the material and structure, the sensitivity and bandwidth of the transducer are significantly improved. To demonstrate this, we fabricate an element of a 10 MHz range 1D array transducer. The Tx-chip is processed to be diaphragms after depositing a 2.6 mumathrm{m} PZT thin film on a silicon on insulator substrate. The Rx-PMUT chip consists of a 4.6 mumathrm{m} P(VDF-TrFE) thin film, which is directly coated and crystalized on a complementary metal-oxide-semiconductor circuit. The Tx and Rx chips are placed side-by-side in proximity. We evaluate the single element acoustic characteristics, Tx sensitivity, Rx sensitivity, and instantaneous loop gain (ILG) in water. As a result, we realized a higher ILG of +29 dB and a wider bandwidth compared to a conventional 1D array.

    DOI： 10.1109/IUS46767.2020.9251511

  • Monolithic Integration of P(VDF-TrFE) Thin Film on CMOS for Wide-band Ultrasonic Transducer Arrays

    Kenji Suzuki, Yuta Nakayama, Izuru Kanagawa, Yuji Matsushita, Takashi Mizuno, Yoshio Mita, Takeshi Yoshimura

    IEEE International Ultrasonics Symposium, IUS   2019-October   807 - 810   2019.10（ ISSN:1948-5719 ） （ ISBN:9781728145969 ） （ eISSN:1948-5727 ）

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    We developed a novel ultrasonic transducer with a P(VDF-TrFE) thin film monolithically integrated on a CMOS LSI. Its higher sensitivity and wider bandwidth in the 20 MHz range compared to a conventional PZT transducer is demonstrated. The P(VDF-TrFE) is an attractive piezoelectric sensor material with an excellent piezoelectric constant and low acoustic impedance matched to human tissue. However, it is difficult to miniaturize the device like a 2D array, and due to its low dielectric constant, the transducer is susceptible to parasitic capacitance of the connection circuity. This problem is solved by the monolithic formation of P(VDF-TrFE) transducers on CMOS LSI. In this study, such an ultrasonic array (16 elements × 4 channels) with a single-element area (190 × 190 μm2) was fabricated, and the receiving acoustic characteristics were evaluated.

    DOI： 10.1109/ULTSYM.2019.8926015

  • Microenergy harvesting using BiFeO3 films

    Takeshi Yoshimura

    Nanoscale Ferroelectric-Multiferroic Materials for Energy Harvesting Applications   195 - 215   2019.02（ ISBN:9780128145005 ）

    　More details

    Vibration energy harvesting has attracted much attention. In this chapter, the principles of a piezoelectric vibration energy harvester are summarized and the figure of merit (FOM) for the piezoelectric film is discussed. Then BiFeO3 is focused on as a promising piezoelectric film for this application. Various approaches to obtaining a high FOM on BiFeO3 films are introduced. Finally, the device performance of the harvester using BiFeO3 films is presented.

    DOI： 10.1016/B978-0-12-814499-2.00011-6

Presentations

  • Energy Harvesting from Electric Power Lines Using Piezoelectric Resonator International conference

    Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura

    Energy Harvesting from Electric Power Lines Using Piezoelectric Resonator  2022.12  The Dielectric Society of Japan

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    Presentation type：Oral presentation (invited, special)  

  • Improvement of Output Power of Piezoelectric Energy Harvester from AC Magnetic field by Magnetic Flux Focusing International conference

    Takeshi Yoshimura, Sengsavang Aphayvong, Shuichi Murakami, Norifumi Fujimura

    International Workshop on Piezoelectric Materials and Applications in Actuators 202  2022.10  Next Generation Sensors and Actuators, The Japan Society

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    Presentation type：Oral presentation (general)  

  • Enhancing output power of piezoelectric MEMS vibration energy harvester using BiFeO3 films International conference

    Sengsavang Aphayvong, Takeshi Yoshimura, Shuichi Murakami, Norifumi Fujimura

    International Workshop on Piezoelectric Materials and Applications in Actuators 202  2022.10  Next Generation Sensors and Actuators, The Japan Society

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    Presentation type：Oral presentation (general)  

  • Investigation of Polarization Behavior of HfO2 Thin Films Via Piezoelectric Characterization Invited International conference

    Takeshi Yoshimura

    242th Electrochemical Society Meeting Abstracts  2022.10  Electrochemical Society

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    Presentation type：Oral presentation (invited, special)  

  • Pyroelectric Properties of BiFeO<sub>3</sub>-LaAlO<sub>3</sub> Thin Films

    泉宏和, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2022 

  • Observation of Polarization Domain Structure of HfO<sub>2</sub> Films using Direct Piezoelectric Response Microscopy

    萩原拓永, 森田行則, 太田裕之, 右田真司, 藤村紀文, 吉村武

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2022 

  • Electron Doping to MoS<sub>2</sub> by Ultra-thin Film Formation of Phosphine Molecules

    四谷祥太郎, 津留崎陽大, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2022 

  • Monitoring of PLD growth process of strongly correlated ferroelectric YMnO<sub>3</sub> thin films by optical emission spectra of plasma plume

    五十嵐悠生, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2022 

  • Fabrication of BiFeO<sub>3</sub> epitaxial films on Si substrates by magnetron sputtering method

    高木昂平, 藤村紀文, 吉村武

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2022 

  • Mechanism of sonication-based selective preparation of 2D thin-layers

    中本竜弥, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • Evaluation of solvent dependence of electrical properties of organic piezoelectric P(VDF-TrFE)

    平塚一暉, 金川いづる, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Electric field modulation of MoS<sub>2</sub> by ionic liquids mixed with inorganic ions

    望月陸, 松山圭吾, 福井暁人, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • 極薄の透明発光デバイス実現に向けた層状半導体の安定な超高発光化

    中原隆宏, 山田悠貴, 芦田淳, 吉村武, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2021 

  • Investigation of topological phase transformation of MoS<sub>2</sub> with organic solution

    松山圭吾, 福井暁人, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Selection of exfoliated thin-layered MoS<sub>2</sub>via a solution-based sonication process

    中本竜弥, 松山圭吾, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Topological Phase Transformation of MoS<sub>2</sub> via organic/inorganic hybrid system

    松山圭吾, 吉村武, 藤村紀文, 桐谷乃輔

    日本物理学会講演概要集(CD-ROM)  2021 

  • Transport mechanism of metallic MoS<sub>2</sub> by junction with strong donor molecules

    松山圭吾, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • Specific Interaction between Two-dimensional Semiconductor MoS<sub>2</sub> and Amide Molecules under Contaminating Solution

    福井暁人, 尾上弘晃, 板井駿, 石倉恵子, 池野豪一, 長田貴弘, 土方優, PIRILLO Jenny, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    日本化学会春季年会講演予稿集(Web)  2021 

  • The study of PL enhancement of monolayer WS<sub>2</sub> via a superacid treatment

    中原隆宏, 山田悠貴, 芦田淳, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Effect of Fabrication Solvents on the Electrical Properties of P(VDF-TrFE) Thin Films

    平塚一暉, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • 二次元半導体の液中高発光化を実現するイオン界面の構築

    木村大輔, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2021 

  • ロバストな量子ビット実現に向けた有機/無機接合デバイス

    松山圭吾, 吉村武, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2021 

  • Mechanism of the improvement of photoluminescence intensity for monolayer WS<sub>2</sub> by paraffin coating

    中原隆宏, 吉村武, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • Investigation of the growth mechanism of BiFeO<sub>3</sub> films on sputtering method: II

    菊地理沙, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • Investigation of the growth mechanism of BiFeO<sub>3</sub> films on sputtering method

    菊地理沙, 村瀬幹生, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Effect of sputtering conditions on internal stress of Al<sub>1-x</sub>Sc<sub>x</sub>N thin films

    宮地航平, 吉村武, 萩原拓永, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • Interfacial electronic modulation of molybdenum disulfide and ionic chemicals

    木村大輔, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2021 

  • ~1nm厚の単層半導体の選択的な単離手法の開拓

    中本竜弥, 松山圭吾, 吉村武, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2021 

  • Remote Electron Doping of WSe<sub>2</sub>/MoS<sub>2</sub> Hetero-stacked structures by Redox-active Molecules

    四谷祥太郎, 松山圭吾, 福井暁人, 野内亮, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Epitaxial growth of Al<sub>1-x</sub>Sc<sub>x</sub>N thin films on Si substrates using TiN buffer layer

    宮地航平, 村瀬幹生, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Consideration of Interaction between Two-dimensional Semiconductor and Solvent Molecules toward Selective Sensing of DMF Molecule

    福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2021 

  • Effect of residual stress on piezoelectric properties of BiFeO<sub>3</sub> epitaxial thin films

    泉宏和, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集(Web)  2021 

  • Chemical Gating for 2D Semiconducting Materials Using the Out-of-plane Molecular Dipole Moment

    福井暁人, 津留崎陽大, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Characterization of Mechanical Nonlinear effect in Piezoelectric MEMS Vibration Energy Harvesters using Lead-Free BiFeO<sub>3</sub> Film

    村上修一, 吉村武, 金岡祐介, 佐藤和郎, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Characterization of Piezoelectric MEMS Vibration Energy Harvesters using Lead-Free BiFeO<sub>3</sub> Film under Random Oscillation

    村上修一, 吉村武, 金岡祐介, 佐藤和郎, 津田和城, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Topological phase transition of MoS<sub>2</sub> via contacting electron donor molecules

    松山圭吾, 福井暁人, 山田悠貴, 青木佑樹, 木村大輔, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Development of MoS<sub>2</sub> Biosensor for Measurement of DMF Concentration in Culture Fluid

    福井暁人, 長田貴弘, 土方優, PIRILLO Jenny, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Effect on crystal structure and the dielectric properties of HfO<sub>2</sub>:Y/Si films by oxygen partial pressure during deposition

    佐保勇樹, 高田賢志, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Bright monolayer MoS<sub>2</sub> via spontaneous formation of superacid ultra thin film

    山田悠貴, 吉村武, 芦田淳, 藤村紀文, 篠北啓介, 松田一成, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Investigation of all solid-state heat-pump using electrocaloric effect in ferroelectric thin films

    松下裕司, 吉村武, 桐谷乃輔, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Correlation between PL property and spin order in d-d transition of strongly correlated ferroelectric YMnO<sub>3</sub> thin films

    三浦光平, 嶋本健人, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • 分子接面による二次元半導体の電子光学物性制御

    桐谷乃輔, 吉村武, 藤村紀文

    大阪府立大学研究推進機構放射線研究センター放射線施設共同利用報告書  2020 

  • Electronic structure modulation of molybdenum disulfide via electrostatic interaction of ionic molecules

    木村大輔, 山田悠貴, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Electronic structure modulation of monolayer molybdenum disulfide by electrostatic interaction of anionic molecules

    木村大輔, 山田悠貴, 福井暁人, 青木佑樹, 松山圭吾, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Electronic structure modulation of MoS<sub>2</sub> via Solid state ionic gating by nanowire network

    青木佑樹, 松山圭吾, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Epitaxial growth of BiFeO<sub>3</sub> films on Si substrates by sputtering method: III

    菊地理沙, 岡本直樹, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Investigation of the growth mechanism of PZT films on sputtering method: II

    村瀬幹生, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Investigation of the growth mechanism of PZT films on sputtering method

    村瀬幹生, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • イオン性分子の接合による2D半導体の液中高発光化

    木村大輔, 山田悠貴, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2020 

  • Crystallinity and Piezoelectric Properties of BiFeO<sub>3</sub> Thin Films Prepared by an in-situ Laser Irradiation PLD Method

    泉宏和, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • The effects of the ablation laser on the epitaxial growth process and the electronic structure of electric-ferroelectric YbFe<sub>2</sub>O<sub>4</sub> PLD thin films

    嶋本健人, 三浦光平, 田中淳平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2020 

  • Composition control and change in the defect structure of YbFe<sub>2</sub>O<sub>4</sub> epitaxial thin films

    嶋本健人, 三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Interfacial dielectric properties of Y:HfO<sub>2</sub> epitaxial thin films directly on Si substrate

    佐保勇樹, 宝栄周弥, 高田賢志, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • Crystallization process of metastable Al-doped HfO<sub>2</sub> films directly on Si by atomic layer deposition

    宝栄周弥, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • 2次元半導体トランジスタによる夾雑溶液内DMF分子センサの開発

    福井暁人, 尾上弘晃, 板井駿, 石倉恵子, 池野豪一, 長田貴弘, 土方優, PIRILLO Jenny, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2020 

  • Analysis of vibration propagation for one-dimensional mechanical metamaterial

    菊地理沙, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2020 

  • 非ガウス型ランダム振動を用いた圧電MEMS振動発電素子の特性評価

    村上修一, 吉村武, 金岡祐介, 津田和城, 細山亮, 堀口翔伍, 佐藤和郎, 神田健介, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 電子強誘電体YbFe<sub>2</sub>O<sub>4</sub>薄膜のエピタキシャル成長過程におよぼす下部電極の影響

    嶋本健人, 三浦光平, 田中淳平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 電力線周辺磁界を利用した振動発電モジュールの開発

    上野雄也, 巳波敏生, 吉村武, 村上修一

    電気学会電力・エネルギー部門大会論文集(CD-ROM)  2019 

  • 量子物性発現を志向した有機/二次元無機半導体接合系の構築

    松山圭吾, 福井暁人, 青木佑樹, 山田悠貴, 木村大輔, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 酸素分圧によるHfO<sub>2</sub>:Y/Si薄膜の配向と結晶構造の制御

    佐保勇樹, 鎌田大輝, 高田賢志, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 産学連携とナノテクプラットフォームで拓く集積化高感度超音波プローブの研究

    三田吉郎, 吉村武, 水野隆, 鈴木謙次, 中山雄太, 遠藤登喜子

    回路とシステムワークショップ論文集(CD-ROM)  2019 

  • 溶媒和したレドックス活性分子が誘起する2D半導体の超高発光化

    一宮永, 福井暁人, 青木佑樹, 山田悠貴, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2019 

  • 水熱合成法で作製した(K<sub>x</sub>Na<sub>1-x</sub>)NbO<sub>3</sub>自己分極膜の圧電特性の評価

    舘山明紀, 伊東良晴, 清水荘雄, 折野裕一郎, 黒澤実, 吉村武, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 水熱合成法で作製した(K,Na)NbO<sub>3</sub>配向膜の圧電定数,e<sub>31,f</sub>,の評価

    舘山明紀, 伊東良晴, 中村美子, 清水荘雄, 折野裕一郎, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘, 吉村武, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • 正圧電応答顕微鏡を用いたP(VDF-TrFE)膜のドメイン構造観察

    金川いづる, 松下裕司, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 正圧電応答顕微鏡によるP(VDF-TrFE)膜の圧電評価

    金川いづる, 松下裕司, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • 新奇ナノカーボン物質「グラフェンナノリボンネットワーク」の実現

    青木佑樹, 山田悠貴, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2019 

  • 強誘電体/半導体ヘテロ接合における負性容量の発現機構とその時間発展シミュレーション

    高田賢志, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • 強誘電体/半導体ヘテロ接合における界面ポテンシャル変化による負性容量とその時間発展シミュレーション

    高田賢志, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 強相関強誘電体YMnO<sub>3</sub>薄膜の電子遷移と光誘起電流の相関

    三浦光平, 田中淳平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 常圧非平衡プラズマを用いて作製した高抵抗ZnO薄膜の電気的および圧電的特性

    宝栄周弥, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • 大面積化を指向したグラフェンナノリボンのネットワーク化

    青木佑樹, 一宮永, 山田悠貴, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • 大面積CVD成膜単層MoS<sub>2</sub>の高発光化

    山田悠貴, 青木佑樹, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 篠北啓介, 松田一成, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • リラクサ強誘電体ポリマー膜における交流電界下の電気熱量効果

    松下裕司, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • ナノワイヤマスクを用いたグラフェンナノリボンネットワークの作製

    青木佑樹, 山田悠貴, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • Fabrication method of P(VDF-TrFE) thin film for soft micro actuator

    山口龍太郎, 宇佐美尚人, 松下裕司, 吉村武, 肥後昭男, 三田吉郎

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)  2019 

  • スパッタ法を用いたSi基板上へのPZTエピタキシャル薄膜の作製

    村瀬幹生, 和泉享兵, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • スパッタ法によるSi基板上へのBiFeO<sub>3</sub>薄膜のエピタキシャル成長 II

    岡本直樹, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • スパッタ法によるSi基板上へのBiFeO<sub>3</sub>薄膜のエピタキシャル成長

    岡本直樹, 和泉享兵, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • スパッタBiFeO<sub>3</sub>薄膜を用いた圧電MEMS振動発電素子の高効率・高出力化

    荒牧正明, 吉村武, 村上修一, 佐藤和郎, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • グラフェンナノリボンを用いたネットワーク状構造の作製

    青木佑樹, 山田悠貴, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2019 

  • インパルス振動を用いた圧電MEMS振動発電素子の特性評価

    APHAYVONG Sengsavang, 吉村武, 神田健介, 村上修一, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • イオン性有機物との接合による単層二硫化モリブデンの電子状態の変調

    木村大輔, 山田悠貴, 松山圭吾, 福井暁人, 青木佑樹, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • YbFe<sub>2</sub>O<sub>4</sub>薄膜の化学組成が電気・磁気的特性におよぼす影響 II

    田中淳平, 三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の組成制御と電気・磁気・光学特性におよぼす影響

    田中淳平, 三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • UV光照射に伴う超酸分子処理MoS<sub>2</sub>のフォトルミネッセンスの連続的上昇

    山田悠貴, 青木佑樹, 福井暁人, 一宮永, 吉村武, 芦田淳, 藤村紀文, 篠北啓介, 松田一成, 桐谷乃輔, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • TiNバッファ層を用いたSi基板上へのPZT薄膜のエピタキシャル成長の検討

    村瀬幹生, 岡本直樹, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • P(VDF-TrFE)薄膜の固体ヒートポンプ応用の検討

    松下裕司, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • Wide-band Ultrasonic Transducer Arrays by Monolithic Integration of P(VDF-TrFE) Thin Film on CMOS

    中山雄太, 中山雄太, 鈴木謙次, 水野隆, 金川いづる, 松下裕司, 吉村武, 三田吉郎

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)  2019 

  • MoS<sub>2</sub>/アミド系分子間の電子移動メカニズムの検討

    福井暁人, 土方優, PIRILLO Jenny, 青木佑樹, 山田悠貴, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • HfO<sub>2</sub>系強誘電体スパッタ薄膜の成長時の酸素分圧が電気特性におよぼす影響

    佐保勇樹, 高田賢志, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • HfO<sub>2</sub>基強誘電体スパッタ薄膜の成長時の酸素分圧が結晶成長・結晶構造に与える影響

    高田賢志, 佐保勇樹, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • BiFeO<sub>3</sub>系非鉛圧電薄膜を用いる振動発電素子

    泉宏和, 吉村武, 藤村紀文, 村上修一, 佐藤和郎

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2019 

  • Enhancement of output power of piezoelectric MEMS vibration energy harvesters with 2-degree-of-freedom system

    吉村武, 荒牧正明, 藤村紀文, 村上修一, 神田健介

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)  2019 

  • 2自由度構造を有する圧電MEMS振動発電素子の電気機械特性

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • Relationship between Spontaneous Pattern Formation of Donor Molecules and Surface States on 2 Dimensional Semiconducting Materials

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    化学とマイクロ・ナノシステム  2019 

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2019 

  • (001)Si基板上HfO<sub>2</sub>系エピタキシャル薄膜の構造制御に向けた成長過程の観察

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • 非平衡酸窒素プラズマアシストPLD法によるZnO薄膜の製膜 II

    金屋良輔, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • 銅イオン供給律速条件下でのCu<sub>2</sub>O薄膜の電気化学成長

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • 遷移金属半導体表面におけるドナー性分子の自発的なパターン形成機構

    一宮永, 瀧ノ上正浩, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • 薄膜熱電対を用いたP(VDF-TrFE)薄膜の電気熱量効果の評価

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • 強誘電体ゲートトランジスタにおけるHfO<sub>2</sub>系強誘電体薄膜の期待と問題点

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • 強誘電体ゲートFETにおける負性容量発現機構

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • 強誘電体/半導体ヘテロ接合における過渡的負性容量

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

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    福井暁人, 土方優, PIRILLO Jenny, 一宮永, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • 半導体プロセス技術の開拓を志向した機能性分子の自発的なパターン形成

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    化学とマイクロ・ナノシステム学会研究会講演要旨集  2018 

  • ランダム振動試験による圧電MEMS振動発電素子の特性評価

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    電気学会全国大会講演論文集(CD-ROM)  2018 

  • ランダム振動印加時の圧電MEMS振動発電素子の発電特性

    村上修一, 吉村武, 金岡祐介, 荒牧正明, 津田和城, 佐藤和郎, 神田健介, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • マルチフェロイックYbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の磁気輸送特性

    田中淳平, 三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • ナノデバイス応用を指向した2次元半導体に対するドナー性分子の電子供与性の制御

    福井暁人, 土方優, PIRILLO Jenny, 一宮永, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2018 

  • スパッタ法によるASnO<sub>3</sub>(A=Sr,Ba)薄膜の作製と電気特性評価

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • YbFe<sub>2</sub>O<sub>4</sub>薄膜の化学組成が電気・磁気的特性に及ぼす影響

    田中淳平, 三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • P(VDF-TrFE)膜におけるe<sub>31,f</sub>圧電定数の評価

    金川いづる, 松下裕司, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • MoS<sub>2</sub>の光学特性の向上を指向した表面分子処理法の開拓

    山田悠貴, 青木佑樹, 福井暁人, 一宮永, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

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    鎌田大輝, 高田賢志, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • BiFeO<sub>3</sub>薄膜を用いた圧電MEMS振動発電素子の高出力化

    荒牧正明, 吉村武, 村上修一, 佐藤和郎, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • BiFeO<sub>3</sub>薄膜の格子歪およびドメイン構造が圧電特性に及ぼす影響 II

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018 

  • BiFeO<sub>3</sub>薄膜の格子歪およびドメイン構造が圧電特性に及ぼす影響

    岡本直樹, 苅谷健人, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2018 

  • Piezoelectric MEMS vibration energy harvester using sputtered BiFeO<sub>3</sub> films

    吉村武, 荒牧正明, 藤村紀文, 村上修一, 佐藤和郎

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)  2018 

  • BiFeO<sub>3</sub>におけるポンプ・プローブ測定

    金丸将孝, KHAN Pritam, 吉村武, 藤村紀文, 伊藤利充, 佐藤琢哉

    日本物理学会講演概要集(CD-ROM)  2018 

  • 2次元半導体上における電子ドナー性分子の流動と表面状態の相関

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    化学とマイクロ・ナノシステム学会研究会講演要旨集  2018 

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    小林篤史, 齊藤丈靖, 高田瑶子, 岡本尚樹, 吉村武, 藤村紀文, 樋口宏二, 北島彰

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2018 

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 電力線周辺磁界を利用した圧電発電の検討

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • 電力線周辺磁界を利用した圧電発電

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 走査型プローブ顕微鏡によるBiFeO<sub>3</sub>薄膜の正圧電応答の定量的解析

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • 有機強誘電体におけるイオン液体電極の検討

    柿原凌汰, 苅谷健人, 松下裕司, 桐谷乃輔, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • 強誘電体薄膜における電気熱量効果の直接測定 II

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 強誘電体ゲート電界効果素子を用いたCe添加Si薄膜のキャリア制御

    野浪勇人, 宮田祐輔, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • 強相関強誘電体YMnO<sub>3</sub>薄膜の電子準位と光誘起電流との相関

    三浦光平, ZHANG L., 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 層状半導体への位置選択的キャリア注入を志向した分子性ドーパントの開発

    福井暁人, 三浦光平, 一宮永, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 局所的なキャリア注入を志向した分子性ドーパントの相分離構造

    一宮永, 三浦光平, 瀧ノ上正浩, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 導電性酸化物電極を有する(Pb,La)(Zr,Ti)O<sub>3</sub>キャパシタの水素劣化と飛行時間型二次イオン質量分析法による重水素イオン分析

    高田瑶子, 高田瑶子, 齊藤丈靖, 岡本尚樹, 吉村武, 藤村紀文, 樋口宏二, 北島彰

    日本ゾル-ゲル学会討論会講演予稿集  2017 

  • 圧電MEMS振動発電素子における非線形係数の評価

    荒牧正明, 和泉享兵, 吉村武, 村上修一, 佐藤和郎, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 圧電MEMS振動発電素子における機械的品質係数の評価

    荒牧正明, 和泉享平, 吉村武, 村上修一, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • 圧電MEMS振動発電向け非鉛BiFeO<sub>3</sub>膜のNLDドライエッチング

    村上修一, 佐藤和郎, 荒牧正明, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • 半導体薄膜上におけるレドックス活性分子の自発的なパターン形成

    一宮永, 三浦光平, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集  2017 

  • 二元同時スパッタ法による強誘電性Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub>/Siヘテロ構造の作製

    高田賢志, 鎌田大輝, 金屋良輔, 桐谷乃輔, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • スパッタリング法によるBiFeO<sub>3</sub>-LaAlO<sub>3</sub>系固溶体薄膜の作製とその誘電特性

    泉宏和, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集(CD-ROM)  2017 

  • ZnO薄膜の電気化学成長と粒形態の制御

    今西剛士, 芦田淳, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • SPMを用いた電気熱量効果の直接測定の検討

    松下裕司, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • SnドープIn<sub>2</sub>O<sub>3</sub>下部電極を有する(Pb,La)(Zr,Ti)O<sub>3</sub>キャパシタの作製と評価

    小林篤史, 齊藤丈靖, 高田瑶子, 玉野梨加, 岡本尚樹, 吉村武, 藤村紀文, 樋口宏二, 北島彰

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2017 

  • PLDで成長したMn doped ZnO薄膜の残留ドナー濃度低減に関する検討

    金屋良輔, 高田賢志, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • MoS<sub>2</sub>のキャリア制御を志向した分子接合界面の状態制御

    一宮永, 三浦光平, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • La,AlドープBiFeO<sub>3</sub>薄膜の電気特性

    泉宏和, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • (Ba,La)SnO<sub>3</sub>エピタキシャル薄膜の電気伝導特性

    三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2017 

  • (001)Si基板上にエピタキシャル成長したHfO<sub>2</sub>系絶縁膜への常圧プラズマ照射効果

    鎌田大輝, 高田賢志, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2017 

  • (0001)ZnO基板上における巨大c/a比を有するBiFeO<sub>3</sub>薄膜の成長

    後田敦史, 小前智也, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2016 

  • 靴における圧電発電の検討

    柿原凌汰, 苅谷健人, 松下裕司, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2016 

  • 電子強誘電体YbFe<sub>2</sub>O<sub>4</sub>薄膜の電子状態とその光吸収特性への影響

    樫本涼, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2016 

  • 配向の異なるPt下部電極を用いたPZTキャパシタの作製と電気特性評価

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2014 

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014 

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014 

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    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2014 

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014 

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014 

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

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    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2013 

  • 電気化学成長Cu<sub>2</sub>O薄膜の結晶性における電解液pH依存性

    佐藤俊祐, 芦田淳, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • 電気化学成長Cu<sub>2</sub>O薄膜の空乏層容量解析による伝導特性評価

    佐藤俊祐, 芦田淳, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 電子強誘電体YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の光誘起伝導

    田中寛之, 芦田淳, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 酸化物導電体を下部電極に用いた強誘電体キャパシタの特性評価

    高田瑶子, 辻徹, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文, 樋口宏二, 北島彰, 大島明博

    化学工学会年会研究発表講演要旨集(CD-ROM)  2013 

  • 配向制御BiFeO<sub>3</sub>薄膜を用いた圧電MEMS振動発電

    吉村武, 若園佳祐, 苅谷健人, 藤村紀文, 村上修一

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  2013 

  • 異種分極界面における電界効果

    山田裕明, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 水熱合成TiO<sub>2</sub>ナノチューブの光触媒特性

    石井将之, LEE J., 寺内雅裕, 吉村武, 中山忠親, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 格子不整合を低減させたBiFeO<sub>3</sub>薄膜の圧電特性

    若園佳佑, 氏本勝也, 吉村武, 荒牧正明, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 有機強誘電体を用いた磁性半導体Si:Ce薄膜の電界効果

    宮田祐輔, 高田浩史, 奥山祥孝, 吉村武, 藤村紀文

    Journal of the Vacuum Society of Japan  2013 

  • 有機強誘電体をゲート絶縁膜に用いた希薄磁性半導体Si:Ce薄膜のキャリア制御

    宮田祐輔, 高田浩史, 奥山祥孝, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • 振動発電応用に向けたLaNiO<sub>3</sub>を用いたBiFeO<sub>3</sub>薄膜の配向制御

    苅谷健人, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • 強誘電体YMnO<sub>3</sub>薄膜のスイッチャブル光誘起電流

    宇賀洋志, 芦田淳, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 強誘電体MEMS圧電型振動発電デバイスの開発

    村上修一, 若園佳佑, 苅谷健人, 吉村武, 長瀧敬行, 中出卓男, 中嶋隆勝, 藤村紀文

    電気学会全国大会講演論文集  2013 

  • 大気圧非平衡プラズマを用いて低温成長したZnO薄膜の電気特性

    野瀬幸則, 寺川卓摩, 中村立, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • 大気圧プラズマCVDを用いたZnO薄膜の成長機構

    野瀬幸則, 中村立, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • 六方晶YMnO<sub>3</sub>薄膜の光誘起電流 III

    宇賀洋志, 奥村優太, 芦田淳, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • 三倍周期再構成表面を利用したSiへの高濃度Ceドーピングとその磁気・輸送特性

    宮田祐輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • パルスレーザー堆積法によるBiFeO<sub>3</sub>-LaAlO<sub>3</sub>系薄膜の作製とその誘電特性

    泉宏和, 吉村武, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  2013 

  • ナノチャネルを有する強誘電体ゲートTFTの電気特性評価

    野村侑平, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • Zn極性ZnO基板上ZnMnO薄膜の成長モード制御

    中村立, 吉村武, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • P(VDF-TrFE)薄膜の圧電特性が焦電特性に及ぼす影響

    谷地宣紀, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • MIS構造を用いた高濃度CeドーピングSi薄膜の評価

    奥山祥孝, 吉村武, 宮田祐輔, 芦田淳, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes International conference

    Takeyasu Saito, Yoko Takada, Toru Tsuji, Naoki Okamoto, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura, Koji Higuchi, Akira Kitajima, Akihiro Oshima

    2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013  2013  IEEE

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    Presentation type：Poster presentation  

    Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were employed as a conductive oxide buffer layer on Pt(111) substrate by pulsed laser deposition (PLD). Then, PbLaZrTiOx (PLZT) thin films (thickness: 500 nm) were prepared by the sol-gel method. Finally, AZO and ITO was deposited by PLD as top electrodes with metal through mask having 50 ∼ 500 μm diameter to evaluate ferroelectric properties. We measured polarization-voltage (P-V) hysteresis loops and evaluated fatigue behavior by applying 10 V, 100 μs pulse width and 1 ms interval cycles. Fatigue behavior of PLZT capacitors with AZO buffer layer (AZO/PLZT/AZO/Pt) was improved over 106 cycles, however, that was not with ITO buffer layer (AZO/PLZT/ITO/Pt). © 2013 IEEE.

  • Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO<inf>3</inf> ferroelectric film International conference

    S. Murakami, T. Yoshimura, K. Satoh, K. Wakazono, K. Kariya, N. Fujimura

    Journal of Physics: Conference Series  2013  IOP PUBLISHING LTD

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    Presentation type：Oral presentation (general)  

    Piezoelectric vibration energy harvesters (VEHs) with unimorph structure have been developed using Si micro-electrical mechanical systems (MEMS) technology. Since we revealed that (100) epitaxial BiFeO3 (BFO) piezoelectric films have high figure-of-merit on energy conversion, (100)-oriented BFO films have been prepared on (100)-oriented LaNiO3 bottom electrodes by the sol-gel method. We fabricated the piezoelectric VEHs using BFO films with resonance frequencies of ∼100 Hz. The maximum output power density of these VEHs was determined to be 10.5 μWmm-3G -2 (G=9.8 ms-2) at a load resistance of 1 MΩ, which exceeds or is comparable to those of the best-performing VEHs using other piezoelectric films. © Published under licence by IOP Publishing Ltd.

  • Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes International conference

    Yoko Takada, Toru Tsuji, Naoki Okamoto, Takeyasu Saito, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura, Koji Higuchi, Akira Kitajima, Akihiro Oshima

    2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013  2013  IEEE

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    Presentation type：Poster presentation  

    PbLaZrTiOx (PLZT) thin films were deposited on Pt(111) substrate by the sol-gel method, then aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) top electrodes were deposited by pulsed laser deposition (PLD). We evaluated degradation characteristics by 3% hydrogen atmosphere annealing in 200°C, 1Torr. The polarization ratio of PLZT capacitors with 200 nm top electrodes thickness was maximum value at the same Pb contents. We also evaluated fatigue behavior by applying 10 V, 100 μs pulse width and 1 ms interval cycles. PLZT capacitors with AZO and ITO top electrodes were robust electrodes over 10 5 cycles compared with Pt top electrodes. © 2013 IEEE.

  • BiFeO<sub>3</sub>薄膜を用いた圧電MEMS振動発電

    吉村武, 村上修一, 若園佳佑, 苅谷健人, 藤村紀文

    EMシンポジウム  2013 

  • BiFeO<sub>3</sub>薄膜を用いたMEMS振動発電素子の発電特性

    若園佳佑, 苅谷健人, 吉村武, 村上修一, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の非線形圧電応答

    氏本勝也, 川原祐作, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の正方晶歪の制御とその圧電特性

    川原祐作, 氏本勝也, 吉村武, 藤村紀文

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2013 

  • 2次効果を利用したP(VDF-TrFE)薄膜の焦電特性の向上

    谷地宣紀, 吉村武, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2013 

  • BiFeO<sub>3</sub>エピタキシャル薄膜におけるLa置換の効果

    若園佳佑, 川原祐作, 氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 非貴金属酸化物電極による強誘電体キャパシタの安定性評価

    高田瑶子, 辻徹, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文, 樋口宏二, 北島彰, 大島明博

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2012 

  • 電気化学成長Cu<sub>2</sub>O薄膜の配向制御

    佐藤俊祐, 芦田淳, 近藤雄祐, 八木俊介, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • 電気化学堆積法による(111)Pt上Cu<sub>2</sub>O薄膜成長

    佐藤俊祐, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 貴金属フリー酸化物電極を用いた強誘電体キャパシタの作製と評価

    辻徹, 高田瑶子, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文, 北島彰, 大島明博

    化学工学会年会研究発表講演要旨集(CD-ROM)  2012 

  • 格子歪を用いたBiFeO<sub>3</sub>エピタキシャル薄膜の正圧電特性の増幅

    氏本勝也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • 有機強誘電体を用いた磁性半導体Si:Ce薄膜の電界効果

    宮田祐輔, 高田浩史, 奥山祥孝, 吉村武, 藤村紀文

    真空に関する連合講演会講演予稿集  2012 

  • 有機強誘電体P(VDF-TeFE)を用いた磁性半導体Si:Ceの電界効果

    高田浩史, 奥山祥孝, 宮田祐輔, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • 有機強誘電体P(VDF-TeFE)を用いた希薄磁性半導体Si:Ce薄膜のキャリア制御

    宮田祐輔, 高田浩史, 奥山祥孝, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 有機強誘電体/極性半導体ヘテロ接合電界効果トランジスタにおける分極界面の電気的特性評価

    山田裕明, 吉村武, 藤村紀文

    真空に関する連合講演会講演予稿集  2012 

  • 強誘電体薄膜の挑戦

    藤村紀文, 吉村武

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 強誘電体MEMS振動発電素子の試作とモデリング

    宮渕弘樹, 吉村武, 村上修一, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • 強誘電体MEMS振動発電素子の動作特性の解析

    吉村武, 宮渕弘樹, 村上修一, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 強誘電体MEMSによる振動発電

    吉村武, 宮渕弘樹, 藤村紀文, 村上修一

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  2012 

  • 大気圧非平衡プラズマを用いて低温成長したZnO薄膜の配向制御

    野瀬幸則, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 圧電式振動発電素子の特性向上に対する物質科学的アプローチ

    吉村武, 村上修一, 氏本勝也, 宮渕弘樹, 川原祐作, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • 六方晶YMnO<sub>3</sub>薄膜の光誘起電流 II

    奥村優太, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • 六方晶YMnO<sub>3</sub>薄膜の光誘起電流

    奥村優太, 湯川博喜, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • ナノ粒子操作用レジスト微細加工チップの作成と観察

    柳田宰, 中山忠親, 藤原健志, 吉村武, 石井将之, 鈴木常生, 末松久幸, 新原皓一

    日本セラミックス協会年会講演予稿集  2012 

  • ナノチャネルを有する強誘電体ゲート薄膜トランジスタの作製とその電気特性評価

    野村侑平, 吉村武, 藤村紀文

    真空に関する連合講演会講演予稿集  2012 

  • インデンテーション法による粒子操作用レジスト微細加工チップの作製と観察

    柳田宰, 中山忠親, 藤原健志, 石井将之, 吉村武, 横山義之, 鈴木常夫, 末松久幸, 新原皓一

    粉体粉末冶金協会講演概要集  2012 

  • その場レーザー光照射によるBi-Mg-Ti-O系薄膜の作製

    泉宏和, 氏本勝也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • ZnOチャネル上へのナノギャップ電極の形成と伝導特性評価

    野村侑平, 山田裕明, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の磁気輸送特性

    増田佑介, 湯川博喜, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の光誘起物性

    湯川博喜, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • TiO<sub>2</sub>ナノチューブガスセンサのセンシングメカニズム

    石井将之, 吉村武, 藤村紀文, 寺内雅裕, 中山忠親

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)  2012 

  • TiO<sub>2</sub>ナノチューブFETの電気伝導機構

    石井将之, 寺内雅裕, 吉村武, 中山忠親, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • P(VDF-TrFE)薄膜の圧電特性評価

    谷地宣紀, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • P(VDF-TrFE)薄膜における結晶化が電気特性に及ぼす影響

    谷地宣紀, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • P(VDF-TeFE)/ZnOヘテロ構造の電子輸送特性のチャネル膜厚依存性

    山田裕明, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2012 

  • Growth temperature and thickness dependences of crystal and micro domain structures of BiFeO <inf>3</inf> epitaxial films

    Katsuya Ujimoto, Takeshi Yoshimura, Norifumi Fujimura

    Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012  2012  IEEE

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    Crystal structure and microstructure such as surface morphology and ferroelectric domain structure of 0.2- to 2.0-μm-thick BiFeO 3 epitaxial films deposited between 400 and 700°C were evaluated. For the films deposited at 500°C, tetragonal BiFeO 3 was grown The relaxation of the lattice strain drastically occurred by increasing the film thickness. On the other hand, rhombohedral BiFeO 3 with tetragonal distortion was grown and the relaxation of the lattice strain occurred by the grain growth for the films deposited at 650°C. The grains consist of single domain for the films deposited at 500°C, while those of films deposited at 650°C consist of multi domains. It is suggested that the domain walls existing inside the grains contributes the piezoelectric response. © 2012 IEEE.

  • Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel International conference

    Hiroaki Yamada, Takeshi Yoshimura, Norifumi Fujimura

    Materials Research Society Symposium Proceedings  2012 

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    Presentation type：Oral presentation (general)  

    The electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed. © 2012 Materials Research Society.

  • BiFeO<sub>3</sub>薄膜の振動発電応用

    吉村武, 氏本勝也, 川原祐作, 藤村紀文, 村上修一

    日本セラミックス協会年会講演予稿集  2012 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の格子歪みが圧電特性におよぼす影響

    川原祐作, 氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • BiFeO<sub>3</sub>エピタキシャル薄膜のドメイン構造が圧電特性におよぼす影響

    氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2012 

  • Alドープ酸化亜鉛電極を用いた強誘電体キャパシタの劣化特性評価

    辻徹, 高田瑶子, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文, 北島彰, 大島明博

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2011 

  • 背面露光法により作製した強誘電体ゲートTFTの電気特性

    野村侑平, 福島匡泰, 前田和弘, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • 有機強誘電体P(VDF-TeFE)を用いた磁性半導体Si:Ceの電界効果

    高田浩史, 櫻井周作, 進藤大輔, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • 成長初期層制御による電気化学堆積ZnO連続薄膜の作製

    能津直哉, 近藤雄祐, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • 強誘電体の分極がZnO薄膜の伝導特性に与える影響 II

    山田裕明, 福島匡泰, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • パルスレーザー蒸着法によるBi(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub>薄膜の作製

    泉宏和, 氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2011 

  • Zn極性及びO極性ホモエピタキシャルZnO薄膜の表面構造

    中村立, 長田貴弘, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • ZnOチャネルFeFETの電子輸送特性における強誘電ドメインの影響

    山田裕明, 福島匡泰, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2011 

  • YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の光吸収特性

    湯川博喜, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • TiO<sub>2</sub>ナノチューブチャネルFETのガスセンサ特性

    石井将之, 寺内雅裕, 吉村武, 中山忠親, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2011 

  • TiO<sub>2</sub>ナノチューブのガスセンサ特性の評価(2)

    石井将之, 寺内雅裕, 吉村武, 中山忠親, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • PZT薄膜の33モードにおける正圧電特性 II

    宮渕弘樹, 吉村武, 村上修一, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • PZT薄膜における33モード正圧電特性の結晶構造および方位依存性

    宮渕弘樹, 吉村武, 村上修一, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2011 

  • Fine-structured TiO<inf>2</inf> ceramic patterns on the ceramic surface fabricated by replication International conference

    H. D. Kim, T. Nakayama, B. J. Hong, K. Imaki, T. Yoshimura, T. Suzuki, H. Suematsu, S. W. Lee, Z. Fu, K. Niihara

    IOP Conference Series: Materials Science and Engineering  2011 

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    Presentation type：Poster presentation  

    The ability to fabricate high precision micro- to nanoscale structure in a wide variety of materials is of crucial importance for the advancement of microtechnology, nanotechnology and nanoscience. Also, the ability to create micrometer and sub-micrometer architecture for functional ceramics is a prerequisite of exploring the rich field of ceramic nanotechnology. In this work we fabricated three-dimensional oxide ceramic materials with fine-structure over multiple length scales by combining replication patterning technique, polyvinyl alcohol (PVA), oxide ceramic material (TiO2) nano-sized particles. Our study is based on the idea that PVA can be easily detached from a mold by peeling. We confirmed that micron and sub-micron-sized fine-structured oxide ceramic patterns containing nano-sized pores could be fabricated using this procedure. The results presented demonstrate the compositional and structural diversities that are possible with a facile approach and simple method.

  • Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO<inf>3</inf> epitaxial thin films International conference

    K. Ujimoto, H. Izumi, T. Yoshimura, A. Ashida, N. Fujimura

    IOP Conference Series: Materials Science and Engineering  2011  IOP PUBLISHING LTD

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    Presentation type：Oral presentation (general)  

    The effects of the lattice misfit strain on the crystal system and the ferroelectric properties of BiFeO3 epitaxial thin films were investigated. The misfit strain was controlled by the introduction of a buffer layer. When the film thickness of BiFeO3 is 130 nm, the lattice parameter of the film was controlled by the lattice misfit. Furthermore, when the thickness is 900 nm, it was found that the crystal system of the film with misfit of -1.3 % was monoclinic, and that with a misfit of 0.5 % was rhombohedral. From the evaluation of the ferroelectric properties, it was found that the coercive electric field of the films with a misfit of 0.5 % was smaller than that with misfit of -1.3 %. Moreover, the polarization switching behavior and the leakage current at the microscopic region of the films were investigated using scanning probe microscopy. The results suggest that the lattice misfit causes the generation of defects in the grain and affects the polarization switching behavior. © Published under licence by IOP Publishing Ltd.

  • Characterization of field effect transistor with TiO<inf>2</inf> nanotube channel fabricated by dielectrophoresis International conference

    M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N. Fujimura

    IOP Conference Series: Materials Science and Engineering  2011  IOP PUBLISHING LTD

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    Presentation type：Oral presentation (general)  

    Field effect transistor with TiO2 nanotube channel was fabricated by dielectrophoresis. Although TiO2 nanotube channel is not formed at 10 MHz of the dielectrophoresis, the channel is formed at 100 kHz. It is suggested that migration distance is not enough at 10MHz. The drain current-drain voltage characteristics of the transistor and the temperature dependence indicate that the electric transport is dominated by double Schottky barrier. © 2011 Ceramic Society of Japan.

  • Characterization of direct piezoelectric properties for vibration energy harvesting International conference

    Takeshi Yoshimura, Hiroki Miyabuchi, Syuichi Murakami, Atsushi Ashida, Norifumi Fujimura

    IOP Conference Series: Materials Science and Engineering  2011  IOP PUBLISHING LTD

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    Presentation type：Oral presentation (general)  

    Direct piezoelectric effect of Pb(Zr,Ti)O3 (PZT) thin films was investigated to discuss the application of ferroelectric films to vibration energy harvesting. From the model of the piezoelectric vibration energy harvester, it was found that the figure of merit (FOM) is proportional of the square of the effective transverse piezoelectric coefficient e31,f. The e31,f coefficient of PZT films were measured by substrate bending method. Furthermore, it was found that the e31,f coefficient increases with increasing strain, which is favourable for the vibration energy harvesting. © Published under licence by IOP Publishing Ltd.

  • Bi系ペロブスカイト薄膜の結晶化に及ぼすその場レーザー光照射の効果

    泉宏和, 氏本勝也, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集  2011 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の正圧電特性

    氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2011 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の微細構造が圧電特性におよぼす影響

    氏本勝也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2011 

  • BiFeO<sub>3</sub>エピタキシャル薄膜におけるドメイン構造と圧電特性の相関

    川原祐作, 氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2011 

  • Dielectric Behavior of YMnO<sub>3</sub> Epitaxial Thin Film at around Magnetic Phase Transition Temperature

    Kazuhiro Maeda, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura

    Advances in Science and Technology  2010.10  Trans Tech Publications, Ltd.

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    Relationship between magnetic ordering and ferroelectric polarization switching in YMnO3 epitaxial thin film was investigated. It was found that Néel point of the YMnO3 film is below 80 K, which is consistent with that of YMnO3 single crystal by neutron diffraction. From temperature dependence of the polarization-electric field hysteresis loops and the dielectric permittivity-voltage characteristics, ferroelectric polarization switching behavior was investigated from 300 to 10 K in detail. The ferroelectric polarization switching behavior accords with Ishibashi-Orihara’s theory. Moreover, it was found that the dielectric permittivity under bias electric field have a anomaly below 80 K and the nucleation density for the ferroelectric polarization switching decreases below 130 K, which is higher than 80K.

  • Fabrication and Magneto-Transport Properties of Zn<sub>0.88-x</sub>Mg<sub>x</sub>Mn<sub>0.12</sub>O/ZnO Heterostructures Grown on ZnO Single-Crystal Substrates

    Keiichiro Masuko, Tatsuru Nakamura, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura

    Advances in Science and Technology  2010.10  Trans Tech Publications, Ltd.

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    The transport properties of Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructures (x≤0.15) were investigated. The heterostructures were fabricated on ZnO single-crystal substrates by a pulsed laser deposition system. Atomic force microscope observation and X-ray diffraction analysis suggested that Zn0.88-xMgxMn0.12O layers have atomically flat surface and excellent crystallinity. The results of Hall measurement for Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructure with x=0.075 revealed that the carrier concentration and the electron mobility were 5.1×1012cm-2 and 800 cm2/Vs at 10 K, respectively, suggesting that the carrier confinement effect exits at the heterointerface between Zn0.88-xMgxMn0.12O barrier layer and ZnO channel layer. In the magnetoresistance (MR) measurement at 1.85 K, a positive MR behavior was observed below 0.5 T, while a negative MR behavior was recognized above 0.5 T. The slope of the positive MR decreased with increasing the temperature and was well fitted to the Brillouin function with S=5/2. The electrical and magneto-transport properties were very similar to those of Zn0.88Mn0.12O/ZnO heterostructures without doping Mg.

  • BiFeO<sub>3</sub>-Bi(Ti,Mg)O<sub>3</sub>薄膜のその場レーザー光照射による結晶化

    泉宏和, 氏本勝也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • 非貴金属電極/保護絶縁膜による強誘電体の劣化抑制効果

    辻徹, 和泉要, 廣田祐一郎, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文, 北島彰, 大島明博

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2010 

  • 電荷秩序型強誘電体YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の電気伝導特性

    廣瀬浩次, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • 電気化学堆積法による微細電極上ZnO成長

    近藤雄祐, 能津直哉, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • 誘電泳動法によって作製したTiO<sub>2</sub>ナノチューブFETの電気伝導特性の評価

    石井将之, 寺内雅裕, 吉村武, 中山忠親, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜のネール点近傍における強誘電性分極反転ダイナミクス

    前田和弘, 前田和弘, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • 強誘電体薄膜の正圧電特性と振動発電素子への応用

    宮渕弘樹, 吉村武, 村上修一, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • 強誘電体ゲートTFTのRC分布定数回路を用いたインピーダンス解析

    福島匡泰, 前田和弘, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • 強誘電体キャパシタ用Alドープ酸化亜鉛上部電極の評価

    辻徹, 和泉要, 廣田祐一郎, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文, 北島彰, 大島明博

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • 強誘電体の分極がZnO薄膜の伝導特性に及ぼす影響

    山田裕明, 福島匡広, 高田浩史, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • 大気圧非平衡プラズマを用いたSi基板の酸窒化

    井手康太, 野瀬幸則, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • 分極機能型強誘電体ゲートTFTのデバイス特性評価

    福島匡泰, 吉村武, 前田和弘, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • YMnO<sub>3</sub>薄膜の酸素含有量の制御とその誘電特性におよぼす影響

    前田和弘, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の作製と磁性および電気的特性評価

    湯川博喜, 廣瀬浩次, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • TiO<sub>2</sub>ナノチューブのガスセンサ特性の評価

    石井将之, 寺内雅裕, 吉村武, 中山忠親, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • Si:Ceへの電界効果応用に向けた有機強誘電体PVDF-TeFEの誘電特性評価

    高田浩史, 櫻井周作, 進藤大輔, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • RMnO<sub>3</sub>/ZnOへテロ構造デバイスのチャネル伝導特性

    山田裕明, 福島匡泰, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • PZT薄膜の33モードにおける正圧電特性

    宮渕弘樹, 氏本勝也, 吉村武, 村上修一, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • Pt電極上YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の成長とその電気特性

    湯川博喜, 廣瀬浩次, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • Ferroelectric properties of magnetoferroelectric YMnO<inf>3</inf> epitaxial films at around the Neel temperature Domestic conference

    Takeshi Yoshimura, Kazuhiro Maeda, Atsushi Ashida, Norifumi Fujimura

    Key Engineering Materials  2010  TRANS TECH PUBLICATIONS LTD

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    Presentation type：Oral presentation (general)  

    The switching behavior of the ferroelectric polarization of magnetoferroelectric YMnO3 epitaxial films at around the Néel temperature was investigated to discuss the effect of the antiferromagnetic ordering on the ferroelectric domain wall motion. From neutron diffractions to investigate the antiferromagnetic ordering and measurements of polarization-electric field, dielectric constant, and the time constant of the domain wall motion, the change of the domain wall motion is suggested at around 120 K, which is higher than the Néel temperature (∼80 K). © (2010) Trans Tech Publications.

  • Fabrication of the finestructured alumina porous materials with nanoimprint method International conference

    Hong Dae Kim, Tadachika Nakayama, Jun Yoshimura, Kazuyoshi Imaki, Takeshi Yoshimura, Hisayuki Suematsu, Tsuneo Suzuki, Koichi Niihara

    Ceramic Engineering and Science Proceedings  2010  AMER CERAMIC SOC

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    Presentation type：Poster presentation  

    Nanoimprint lithography (NIL), is recognized as one of the candidates for next generation nanolithography. Usually nanoimprint equipment is highly expensive because the nano-scale mold needs to be hardened with thermal and photonic treatment after casting. In this study, we attempted to fabricate finestructured alumina porous materials without using highly expensive equipment. This method is based on the idea that poly vinyl alcohol (PVA) is simply detached from silicon mold by peeling. The experiment process used PVA and alumina nano-size particle, mixed in water solution. The mixed solution was then put into a micro-scale Si-mold and hardened at room temperature. After hardening the PVA and alumina nano-size particle mixed solution was detached from the micro-scale Si-mold. Throughout burn-out and low-temperature sintering, we confirmed the fabrication of finestructured micrometer-size alumina with nano-size pores.

  • BiFeO<sub>3</sub>薄膜の正・逆圧電特性

    氏本勝也, 宮渕弘樹, 川原祐作, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集(CD-ROM)  2010 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の強誘電特性に対する格子不整合歪の影響

    氏本勝也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集(CD-ROM)  2010 

  • Analysis of C-V behavior for RMnO_3(R: rare earth element)/Y_2O_3/Si

    YOSHIMURA T., ITO D., FUJIMURA N., ITO T.

    IEICE technical report. Electron devices  2009.02  The Institute of Electronics, Information and Communication Engineers

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    YMnO_3 (Y/Mn=1) and YbMnO_3 (Yb/Mn=0.96) thin films were prepared on (111)Y_2O_3/(111)Si. Although both materials exhibit ferroelectric type C-V hysteresis, the window width changed depending on the applied bias voltage. The ferroelectric type hysteresis should include the effect of space charge. To make dear the C-V behavior caused by just only ferroelectricity, and to obtain optimal relationship between ferroelectric and dielectric layer thicknesses, the C-V behavior at high frequency was computed for MSIF structure. Relationships between the counter bias voltage applied to the ferroelectric layer and the thickness of dielectric layer were made clear. Effects of the counter voltage on change in capacitance were discussed.

  • Physical properties and the application of YMnO3 based multiferroic thin films Domestic conference

    Materials integration  2009.02 

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    Presentation type：Oral presentation (general)  

  • Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition International conference

    Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoto, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura

    ECS Transactions  2009  ELECTROCHEMICAL SOC INC

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    Presentation type：Oral presentation (general)  

    Amorphous carbon (α-C) films were deposited on PbLaZrTiOx (PLZT) capacitors by a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The α-C films of 20nm prepared with different deposition pressure, methane concentration and RF power were investigated as a hydrogen barrier layer for ferroelectric random access memory (FeRAM) integration. The α-C films contained atomic hydrogen as shown by Fourier transform infrared spectrometry (FT-IR) and exhibited a possibility to suppress the hydrogen degradation of ferroelectric properties. © The Electrochemical Society.

  • 電荷秩序型強誘電体YbFe<sub>2</sub>O<sub>4</sub>薄膜の成長におよぼす酸素分圧の効果

    廣瀬浩次, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • 電気化学堆積法によるZnO結晶粒の形態制御

    能津直哉, 先山晴香, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • 電気化学堆積法によるCNT上ZnOナノ結晶の作製

    先山晴香, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • 電気化学堆積ZnO薄膜の成長初期過程

    能津直哉, 先山晴香, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の磁気相転移温度近傍における分極反転挙動

    前田和弘, 前田和弘, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の分極反転に及ぼす磁気スピン間相互作用の影響

    前田和弘, 前田和弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • 発光分光分析を用いた電荷秩序型強誘電体YbFe<sub>2</sub>O<sub>4</sub>薄膜の成長過程の評価

    廣瀬浩次, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • Infrared Technology for Safety and Security

    綱脇惠章, 萩行正憲, 立木隆, 内田貴司, 石田明広, 出原敏孝, 岡島茂樹, 神保孝志, 安田升, 廣本宣久, 安岡義純, 木股雅章, 石井順太郎, 鈴木康志, 松田耕一郎, 光永貢一, 和田英男, 吉村武晃, 仁田功一, 的場修, 堀中博通, 梅干野晁, 何江, 浅輪貴史, 亀山俊平, 玉川恭久, 芝井広, 重中圭太郎

    電気学会技術報告  2009 

  • 分極機能型強誘電体ゲートTFTの動作特性

    福島匡泰, 吉村武, 益子慶一郎, 前田和弘, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • 低温成長磁性強誘電体YbMnO<sub>3</sub>エピタキシャル薄膜の磁気特性

    深江圭佑, 前田和弘, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • ダイヤモンドライクカーボン膜による強誘電体の劣化抑制効果

    和泉 要, 廣田 祐一郎, 岡本 尚樹, 齊藤 丈?i, 近藤 和夫, 吉村 武, 藤村 紀文

    化学工学会 研究発表講演要旨集  2009  公益社団法人 化学工学会

  • ガン型プラズマ源を用いた大気圧非平衡窒素プラズマ放電

    井手康太, 福島匡泰, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • ガン型プラズマ源を用いた大気圧非平衡窒素プラズマ

    井手康太, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • インピーダンス分光法による分極機能型強誘電体ゲートTFTの動作特性の解析

    吉村武, 福島匡泰, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • ZnOサラミックスのマイクロ波加熱その場ラマン分光

    辻野哲朗, 芦田淳, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集  2009 

  • Zn<sub>0.88</sub>Mn<sub>0.12</sub>O/ZnOヘテロ構造におけるスピン依存伝導現象

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • YMnO<sub>3</sub>/ZnOヘテロ構造における分極間相互作用を用いた新規なナノデバイス II

    坂本真哉, 福島匡泰, 吉村武, 前田和弘, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • YbMnO<sub>3</sub>薄膜のラマン散乱を用いた評価

    隣信彦, 蓮池紀幸, 播磨弘, 木曽田賢治, 前田和弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • RFプラズマCVD法による絶縁膜の形成と強誘電体の劣化保護効果

    和泉要, 辻徹, 廣田祐一郎, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2009 

  • PLD法によるBiFeO<sub>3</sub>薄膜作製におけるドロップレットの低減

    氏本勝也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2009 

  • CNTを用いたZnOナノ結晶の電気化学的成長

    先山晴香, 吉村武, 芦田淳, 藤村紀文

    日本セラミックス協会年会講演予稿集  2009 

  • BiFeO<sub>3</sub>エピタキシャル薄膜の微視的圧電・伝導特性

    氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2009 

  • BiFeO<sub>3</sub>-LaAlO<sub>3</sub>固溶体薄膜の作製とその誘電特性

    泉宏和, 氏本勝也, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集  2009 

  • 21aVE-1 Dielectric Characteristics of Magnetoferroelectric YMnO_3 Thin Films at around Magnetic Phase Transition Temperature Domestic conference

    Yoshimura Takeshi, Maeda Kazuhiro, Fukae Keisuke, Fujimura Norifumi

    Meeting abstracts of the Physical Society of Japan  2008.08  The Physical Society of Japan (JPS)

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    Presentation type：Oral presentation (general)  

  • 21aVE-2 Dielectric Characteristics of Magnetoferroelectric YMnO_3 Thin Films at around Magnetic Phase Transition Temperature International coauthorship Domestic conference

    Maeda Kazuhiro, Yoshimura Takeshi, Fujimura Norifumi

    Meeting abstracts of the Physical Society of Japan  2008.08  The Physical Society of Japan (JPS)

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    Presentation type：Oral presentation (general)  

  • CaBi<inf>4</inf>Ti<inf>4</inf>O<inf>15</inf> thin film deposition on electroplated Platinum substrates using a sol-gel method International conference

    Takeyasu Saito, Yuichiro Hirota, Mariko Ooyanagi, Naoki Okamoto, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura

    Materials Research Society Symposium Proceedings  2008 

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    Presentation type：Poster presentation  

    CaBi4Ti4O15 growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi 4Ti4O15 films. Repetition through coating, calcination and crystallization decreased void formation on the surface. C-axis oriented thin film could be grown on sputtered platinum substrates with low Pt (200) orientation. On electroplated Pt substrates, (119) oriented CaBi 4Ti4O15 thin film was grown, suggesting surface roughness of Pt substrates is a crucial factor for orientation control of sol-gel derived CaBi4Ti4O15 thin film. © 2009 Materials Research Society.

  • 電荷秩序型強誘電体YbFe<sub>2</sub>O<sub>4</sub>薄膜の作製と評価

    今村謙, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集  2008 

  • 電荷秩序型強誘電体YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の作製(II)

    廣瀬浩次, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • 電気化学的堆積法による多結晶Au基板上ZnO薄膜の結晶形態制御

    芦田淳, 藤田章雄, 先山晴香, 吉村武, 藤村紀文, 中平敦

    応用物理学会学術講演会講演予稿集  2008 

  • 電気化学的堆積法によるPt(111)/sapphire(0001)上ZnOエピタキシャル薄膜の結晶形態制御

    先山晴香, 能津直哉, 芦田淳, 益子慶一郎, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の磁気相転移温度近傍における誘電挙動 2

    前田和弘, 吉村武, 藤村紀文

    日本物理学会講演概要集  2008 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の磁気相転移温度近傍における誘電挙動 1

    吉村武, 前田和弘, 深江圭佑, 藤村紀文

    日本物理学会講演概要集  2008 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の磁気相転移温度近傍における誘電挙動

    前田和弘, 前田和弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の磁気相転移温度近傍における分極反転挙動

    吉村武, 前田和弘, 深江圭佑, 芦田淳, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集  2008 

  • Evaluation of the ecosystem using material cycling and exergy flow

    中谷直樹, 吉村明子, 奥野武俊

    海洋工学シンポジウム講演論文集(CD-ROM)  2008 

  • 導電性AFMプローブを用いたBiFeO<sub>3</sub>エピタキシャル薄膜のリーク電流測定

    氏本勝也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • 分極機能型強誘電体ゲートTFTの提案とデバイス特性の評価

    吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • ナノインプリント法によるチタニア多孔体の合成

    中山忠親, KIM Hong Dae, 寺内雅裕, 今城一嘉, 吉村淳, 吉村武, 鈴木常生, 末松久幸, 新原晧一

    応用物理学会学術講演会講演予稿集  2008 

  • ナノインプリント手法による微細形態を有したアルミナ多孔体の合成

    KIM H. D., 中山忠親, 吉村淳, 今城一嘉, 吉村武, 末松久幸, 鈴木常生, 新原晧一

    日本セラミックス協会秋季シンポジウム講演予稿集  2008 

  • ゾル-ゲル法によるCaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub>強誘電体の製膜と構造制御

    廣田祐一郎, 大柳麻里子, 岡本尚樹, 齊藤丈やす, 近藤和夫, 吉村武, 藤村紀文

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)  2008 

  • ゾル-ゲル法によるCaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub>強誘電体の作製と配向制御

    廣田祐一郎, 大柳麻里子, 岡本尚樹, 齊藤丈靖, 近藤和夫, 吉村武, 藤村紀文

    化学工学3支部合同大会要旨集  2008 

  • ゲルキャスティングとナノインプリントによるアルミナ微細構造体の合成

    中山忠親, KIM H. D., 今城一嘉, 吉村淳, 吉村武, 鈴木常生, 末松久幸, 新原晧一

    日本セラミックス協会秋季シンポジウム講演予稿集  2008 

  • ZnO基板上に作製したZn<sub>1-x</sub>Mn<sub>x</sub>O薄膜の磁気特性

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • ZnOとYMnO<sub>3</sub>による強誘電体ゲートFETの電気特性

    福島匡泰, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    日本セラミックス協会年会講演予稿集  2008 

  • ZnO/YMnO<sub>3</sub>/Pt構造を有する分極機能型強誘電体ゲートTFTの電気的特性

    福島匡泰, 吉村武, 益子慶一郎, 前田和弘, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • ZnMnO/ZnOヘテロ構造のキャリア輸送特性

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集  2008 

  • Zn<sub>0.88</sub>Mn<sub>0.12</sub>O/ZnOヘテロ構造の磁気抵抗におけるs-d交換相互作用の効果

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • YMnO<sub>3</sub>薄膜の電界印加ラマン散乱観察

    隣信彦, 福村秀夫, 蓮池紀之, 播磨弘, 木曽田賢治, 前田和弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • YMnO<sub>3</sub>/ZnOヘテロ構造における分極間相互作用を用いた新規なナノデバイス

    坂本真哉, 福島匡泰, 吉村武, 前田和弘, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • YbMnO<sub>3</sub>エピタキシャル薄膜の磁気相転移点近傍での分極反転挙動

    深江圭佑, 前田和弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • MIS構造を用いたSi:Ce薄膜の評価

    進藤大輔, 寺尾岳見, 藤井賢治, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2008 

  • Spin-coupled phonons in multiferroic YbMnO<inf>3</inf> epitaxial films by Raman scattering International conference

    H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    Journal of Physics: Conference Series  2007.12  IOP PUBLISHING LTD

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    Presentation type：Oral presentation (general)  

    YbMnO3 epitaxial thin films were investigated by Raman scattering in the temperature range of 15-300K. We successfully observed some phonon modes (5A1+6E2) at 15K with mode assignment based on polarized Raman study. Furthermore, an E2 mode at 253 cm -1 which affected Mn-O-Mn bond angles showed anomalous temperature variation in frequency at temperature below ∼80K. It suggested a spin-phonon coupling that occurred below TN. © 2007 IOP Publishing Ltd.

  • Novel ferroelectric gate thin-film transistors using a polar semiconductor channel (vol 45, pg L1266, 2006)

    T. Yoshimura, R. Arai, K. Masuko, A. Ashida, N. Fujimura

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS  2007.04  JAPAN SOC APPLIED PHYSICS

  • BaCo<sub>0.5</sub>Mn<sub>x0.5</sub>O<sub>3-δ</sub>焼結体および単結晶薄膜の電気・磁気特性

    勝部浩次, 松井利之, 吉村武, 藤村紀文, 津田大, 森井賢二

    日本金属学会講演概要  2007 

  • 電荷秩序型強誘電体YFe<sub>2</sub>O<sub>4-x</sub>の電気伝導特性

    吉村武, 今村謙, 堀部陽一, 藤村紀文, 森茂生, 池田直

    日本セラミックス協会秋季シンポジウム講演予稿集  2007 

  • 電気化学的堆積法によるZnO薄膜のエピタキシャル成長

    芦田淳, 藤田章雄, 則政弘太郎, 益子慶一郎, 大塩武士, 吉村武, 藤村紀文, 中平敦

    応用物理学関係連合講演会講演予稿集  2007 

  • 極性半導体をチャネルに用いた分極機能型トランジスタの電気特性

    新井涼太, 益子慶一郎, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • 強誘電体ゲートカーボンナノチューブ電界効果型トランジスタ作製とその電気特性

    吉村武, 櫻井達也, 秋田成司, 藤村紀文, 中山喜萬, 中山喜萬

    日本セラミックス協会秋季シンポジウム講演予稿集  2007 

  • 強磁性強誘導体YbMnO<sub>3</sub>エピタキシャル薄膜の磁気秩序

    高橋哲也, 吉村武, 藤村紀文, 福村秀夫, 播磨弘

    応用物理学関係連合講演会講演予稿集  2007 

  • 大気圧非平衡窒素プラズマを用いたGe窒化膜の作製

    安部拓也, 吉田真司, 吉村武, 功刀俊介, 上原剛, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • 大気圧非平衡プラズマプロセスのHigh-k材料への応用

    吉田真司, 西嶋正憲, 吉村武, 功刀俊介, 上原剛, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • レーザアブレーション飛散粒子の状態がエピタキシャルY<sub>2</sub>O<sub>3</sub>/Si界面に及ぼす影響 II

    西嶋正憲, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • チタニアナノチューブを拘束鋳型とした異方構造ナノ粒子の合成

    鈴木俊太郎, 中山忠親, 寺内雅裕, 吉村武, 板野真也, 関野徹, 末松久幸, 鈴木常生, 新原晧一

    日本セラミックス協会秋季シンポジウム講演予稿集  2007 

  • チタニアナノチューブとナノ粒子からなる高次構造集積材料の合成

    中山忠親, 鈴木俊太郎, 寺内雅裕, 吉村武, 関野徹, 末松久幸, 新原晧一

    粉体粉末冶金協会講演概要集  2007 

  • エピタキシャルBiFeO<sub>3</sub>薄膜の成長初期過程

    乾真介, 泉宏和, 片山知, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • ZnO極薄膜の作製とその電子輸送特性

    坂本真哉, 新井涼太, 大塩武士, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • ZnMnO常磁性薄膜における反強磁性相互作用

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • YMnO<sub>3</sub>強誘電性-常誘電性相転移のラマン散乱観察

    福村秀夫, 播磨弘, 木曽田賢治, 高橋哲也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • YMnO<sub>3</sub>エピタキシャル薄膜の強誘電性分極反転に及ぼす反強磁性秩序の影響

    前田和弘, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • YbFe<sub>2</sub>O<sub>4</sub>薄膜の作製

    今村謙, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • Yb(Mn<sub>1-x</sub>Al<sub>x</sub>)O<sub>3</sub>薄膜の磁気・誘電特性

    深江圭佑, 高橋哲也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • PLD法で作製したZnMnO薄膜の圧電特性の評価

    先山晴香, 大塩武士, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • Magnetic and dielectric properties of Yb(Mn<inf>1-x</inf>Al <inf>x</inf>)O<inf>3</inf> thin films International conference

    K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    IEEE International Symposium on Applications of Ferroelectrics  2007  IEEE

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    Presentation type：Oral presentation (general)  

    Hexagonal RMnO3 is known as one of the candidates for multiferroic materials. We have focused on YbMnO3 which has ferroelectricity along c axis below 1000 K and antiferromagnetic ordering below 80 K. We have reported that magnetic field induced ferromagnetism in YbMnO 3 epitaxial thin films. [1,2] In this study, we investigate the substitutional effect of the nonmagnetic element, Al for Mn ions with triangular spin ordering on the ferroelectric and magnetic properties of YbMnO 3.

  • BiFeO<sub>3</sub>の電気,磁気特性におよぼすBサイトへのMn置換効果

    片山知, 乾真介, 泉宏和, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2007 

  • Multiferroic phenomena in ferroelectric magnet

    FUJIMURA Norifumi, YOSHIMURA Takeshi

    応用物理  2006.06 

  • (Ba<sub>1-x</sub>Bi<sub>x</sub>)(Fe<sub>0.3</sub>Zr<sub>0.7</sub>)O<sub>3</sub>エピタキシャル薄膜の合成とその電気・磁気特性評価

    大道悟, 松井利之, 津田大, 吉村武, 藤村紀文, 森井賢二

    日本金属学会講演概要  2006 

  • 高分解能透過型電子顕微鏡によるBa(Fe<sub>1-x</sub>Zr<sub>x</sub>)O<sub>3-δ</sub>エピタキシャル薄膜の構造評価及び電磁気特性

    佐藤里奈, 松井利之, 藤村紀文, 吉村武, 津田大, 森井賢二

    日本金属学会講演概要  2006 

  • 電荷秩序型強誘電体YFe<sub>2</sub>O<sub>4-δ</sub>の電気伝導特性

    今村謙, 堀部陽一, 吉村武, 藤村紀文, 森茂生, 池田直

    応用物理学会学術講演会講演予稿集  2006 

  • 磁性誘電体Ba(Co<sub>1-x</sub>Mn<sub>x</sub>)O<sub>3-δ</sub>単結晶薄膜の合成および特性評価

    勝部浩次, 井上智博, 松井利之, 吉村武, 藤村紀文, 津田大, 森井賢二

    日本金属学会講演概要  2006 

  • 磁性強誘電体YMnO<sub>3</sub>エピタキシャル薄膜の誘電特性の改善とその磁気および誘導特性

    前田和弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • 磁性半導体Si:Ceを用いたMISキャパシタの誘電特性の改善

    進藤大輔, 西嶋正憲, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • 磁性半導体Si:Ce MOS構造の作製とその誘電特性

    進藤大輔, 寺尾岳見, 西嶋正憲, 原武耕平, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • 強誘電性YbMnO<sub>3</sub>エピタキシャル薄膜の磁気的性質の評価

    高橋哲也, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • 強誘電性YbMnO<sub>3</sub>エピタキシャル薄膜の磁気特性(II)

    高橋哲也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • 強誘電体ゲート薄膜トランジスタを用いたZnOの物性評価

    福島匡泰, 新井涼太, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • 強誘電体ゲートカーボンナノチューブ電界効果型トランジスタの作製とその評価

    桜井達也, 秋田成司, 吉村武, 藤村紀文, 中山喜万

    応用物理学関係連合講演会講演予稿集  2006 

  • 強誘電体ゲートCNT-FETの作製と電気特性の評価

    桜井達也, 吉村武, 秋田成司, 藤村紀文, 中山喜万

    応用物理学関係連合講演会講演予稿集  2006 

  • 大気圧非平衡窒素プラズマ生成時の印加電圧周波数がSiの窒化過程におよぼす影響

    吉田真司, 中永麻理, 早川竜馬, 吉村武, 芦田淳, 功刀俊介, 上原剛, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • 大気圧非平衡窒素プラズマおよびRFプラズマを用いて作製した低温Si窒化膜/Si界面における結合状態の比較

    早川竜馬, 中永麻理, 吉田真司, 田川雅人, 寺岡有殿, 吉村武, 芦田淳, 功刀俊介, 上原剛, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • 大気圧非平衡プラズマのガン型プラズマ源への応用

    中永麻理, 吉村武, 上原剛, 功刀俊介, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • 共振周波数で生成した大気圧非平衡窒素プラズマがSi窒化膜の誘電特性に与える影響

    吉田真司, 中永麻理, 吉村武, 功刀俊介, 上原剛, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • レーザアブレーション飛散粒子の状態がエピタキシャルY<sub>2</sub>O<sub>3</sub>/Si界面に及ぼす影響

    西嶋正憲, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • レーザアブレーション法によって作製したエピタキシャルY<sub>2</sub>O<sub>3</sub>/Si界面の評価

    西嶋正憲, 原武耕平, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • マルチフェロイックYMnO<sub>3</sub>薄膜のラマン散乱による研究

    福村秀夫, 松井智司, 播磨弘, 木曽田賢治, 高橋哲也, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • パルス通電焼結法によるビスマスフェライト焼結体の合成

    中山忠親, 大塚悟司, 吉村武, 藤村紀文, 楠瀬尚史, 関野徹, 鈴木常生, 末松久幸, JIANG Weihua, 新原こう一

    日本セラミックス協会年会講演予稿集  2006 

  • ダブルフェロ特性を発現するBiFeO<sub>3</sub>多結晶体の焼結挙動

    大塚悟司, 中山忠親, 鈴木常生, 末松久幸, JIANG W., 新原晧一, 吉村武, 藤村紀文, 松井利之, 楠瀬尚史, 関野徹

    セラミックス基礎科学討論会講演要旨集  2006 

  • ZnOをチャンネルに用いた強誘電体ゲートFETの作製とその電気的特性

    吉村武, 新井涼太, 益子慶一郎, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集  2006 

  • ZnO:Mnエピタキシャル膜における空間電荷の圧電特性への影響

    大塩武士, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • ZnO:Mn/Pt/c-sapphireにおけるPtのエピタキシーとZnO:Mnの誘電・圧電特性の検討

    大塩武士, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • ZnO/YMnO<sub>3</sub>ヘテロ構造を用いた強誘電体ゲート薄膜トランジスタの電気特性

    新井涼太, 重光学道, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • ZnMnO薄膜の光学特性のMn濃度依存性

    福島匡泰, 益子慶一郎, 大塩武士, 芦田淳, 吉村武, 藤村紀文, 田中浩康, 中山正昭

    応用物理学関係連合講演会講演予稿集  2006 

  • ZnMnO/ZnOヘテロ界面の磁気輸送特性

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • ZnMnO/ZnOヘテロ界面における電子の閉じ込め効果

    益子慶一郎, 福島匡泰, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • YFe<sub>2</sub>O<sub>4-δ</sub>の電気的・磁気的特性における酸素欠損の影響

    今村謙, 堀部陽一, 吉村武, 藤村紀文, 森茂生, 池田直

    応用物理学関係連合講演会講演予稿集  2006 

  • PLD法を用いたBiFeO<sub>3</sub>薄膜の作製におけるアブレーション状態の評価

    乾真介, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • PLD法によるYMnO<sub>3</sub>薄膜の作製と発光分光分析を用いた飛散粒子の解析

    前田和弘, 重光学道, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2006 

  • Pb(Zr,Ti)O<sub>3</sub>/ZnOヘテロ構造を用いた強誘電体ゲート薄膜トランジスタの電気特性

    新井涼太, 益子慶一郎, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2006 

  • Ba(Fe,Zr)O<sub>3</sub>強磁性誘電体薄膜の磁性及び誘電性へ及ぼすBi置換の影響

    松井利之, 大道悟, 藤村紀文, 吉村武, 津田大, 森井賢二

    応用物理学会学術講演会講演予稿集  2006 

  • Dielectric Properties of Epitaxial YMnO_3/Y_2O_3/Si MFIS structure Domestic conference

    FUJIMURA Norifumi, HARATAKE Kohei, YOSHIMURA Takeshi

    電気学会電子材料研究会資料  2005.06 

    　More details

    Presentation type：Oral presentation (general)  

  • PLD法により作製したMnドープBaCoO<sub>3</sub>薄膜の磁性及び誘電性

    松井利之, 井上智博, 藤村紀文, 吉村武, 津田大, 森井賢二

    応用物理学会学術講演会講演予稿集  2005 

  • 磁性酸化物薄膜の新展開-フュージョン・フェロトロニクスを目指して-磁性誘電体Ba(Fe<sub>1-x</sub>Zr<sub>x</sub>)O<sub>3-δ</sub>エピタキシャル薄膜の磁性及び誘電性の検討

    佐藤里奈, 松井利之, 藤村紀文, 吉村武, 津田大, 森井賢二

    日本金属学会講演概要  2005 

  • 磁性酸化物薄膜の新展開-フュージョン・フェロトロニクスを目指して-磁性強誘電体と磁性半導体を用いた新規なマルチフェロイックトランジスタの開発

    藤村紀文, 吉村武

    日本金属学会講演概要  2005 

  • 磁性酸化物薄膜の新展開-フュージョン・フェロトロニクスを目指して-原子レベルで平坦なZnMnO/ZnOヘテロ構造における二次元電子ガスの形成

    益子慶一郎, 枝広俊昭, 芦田淳, 吉村武, 藤村紀文

    日本金属学会講演概要  2005 

  • 磁性酸化物薄膜の新展開-フュージョン・フェロトロニクスを目指して-YMnO<sub>3</sub>エピタキシャル薄膜のマルチフェロイック物性

    藤村紀文, 吉村武

    日本金属学会講演概要  2005 

  • 磁性酸化物薄膜の新展開-フュージョン・フェロトロニクスを目指して-BaFeO<sub>3-δ</sub>磁性誘電体エピタキシャル薄膜のFeイオン価数と磁性,誘電性

    松井利之, 佐藤里奈, 竹谷英一, 津田大, 吉村武, 藤村紀文, 森井賢二

    日本金属学会講演概要  2005 

  • 磁性酸化物薄膜の新展開-フュージョン・フェロトロニクスを目指して-Ba(Co,Mn)O<sub>3-δ</sub>ペロブスカイト酸化物薄膜の作製および電磁気特性

    井上智博, 松井利之, 津田大, 吉村武, 藤村紀文, 森井賢二

    日本金属学会講演概要  2005 

  • 強誘電体YbMnO<sub>3</sub>エピタキシャル薄膜の磁気特性

    高橋哲也, 重光学道, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • 強磁性強誘電体YbMnO<sub>3</sub>薄膜の誘電特性の改善

    高橋哲也, 重光学道, 吉村武, 芦田淳, 藤村紀文, 中山忠親, 新原こう一

    応用物理学関係連合講演会講演予稿集  2005 

  • 大気圧非平衡窒素プラズマを用いて作製した低温Si窒化膜の誘電特性と欠陥評価

    早川竜馬, 中永麻理, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • 大気圧非平衡窒素プラズマを用いた低温Si窒化膜の膜厚制御とその誘電特性

    早川竜馬, 中永麻理, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • 大気圧非平衡窒素プラズマを用いた低温Si窒化膜の作製とその誘電特性

    早川竜馬, 中永麻理, 吉村武, 芦田淳, 藤村紀文, 上原剛

    日本セラミックス協会秋季シンポジウム講演予稿集  2005 

  • 大気圧非平衡プラズマを用いたシリコンへの窒化メカニズム

    中永麻理, 早川竜馬, 吉村武, 芦田淳, 上原剛, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • 圧電性半導体/強誘電体トランジスタを目的としたZnO/YMnO<sub>3</sub>ヘテロ構造の作製及びその電気的特性

    新井涼太, 重光学道, 益子慶一郎, 大塩武士, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • 原子レベルで平坦な界面を有するZnMnO/ZnOヘテロ構造の作製とその輸送特性

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • レーザアブレーション法によって作製したエピタキシャルY<sub>2</sub>O<sub>3</sub>/Si界面の改善

    西嶋正憲, 原武耕平, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • レーザアブレーション法によって作製したエピタキシャルY<sub>2</sub>O<sub>3</sub>/Siの界面の改善

    西嶋正憲, 原武耕平, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • レーザアブレーション法によって作製したY<sub>2</sub>O<sub>3</sub>/Siの界面特性の改善

    西嶋正憲, 原武耕平, 吉村武, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集  2005 

  • ZnOエピタキシャル薄膜の誘電特性および圧電特性に及ぼすMn添加効果

    大塩武士, 芦田淳, 吉村武, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集  2005 

  • ZnOエピタキシャル膜の誘電特性に及ぼすMn添加効果

    大塩武士, 益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • ZnO/YMnO<sub>3</sub>強誘電体ゲート圧電半導体トランジスタの電気的特性

    吉村武, 新井涼太, 重光学道, 益子慶一郎, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • ZnO/YMnO<sub>3</sub>ヘテロ構造を用いた強誘電体ゲート圧電性半導体薄膜トランジスタの作製と評価

    新井涼太, 重光学道, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集  2005 

  • ZnO/YMnO<sub>3</sub>ヘテロ構造を用いた強誘電体ゲート圧電半導体薄膜トランジスタの作製と評価

    新井涼太, 重光学道, 益子慶一郎, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • ZnMnO/ZnOヘテロ構造の表面平坦性の向上

    益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2005 

  • YMnO<sub>3</sub>薄膜の磁性-誘電性相関現象

    重学学道, 高橋哲也, 吉村武, 芦田淳, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • YMnO<sub>3</sub>系物質のマルチフェロイック物性

    藤村紀文, 吉村武

    日本セラミックス協会秋季シンポジウム講演予稿集  2005 

  • YMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si強誘電体ゲートキャパシタの作製とその電気的特性

    吉村武, 原武耕平, 伊藤大輔, 藤村紀文

    日本セラミックス協会秋季シンポジウム講演予稿集  2005 

  • YMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/SiエピタキシャルMFISキャパシタのI層の薄膜化とその評価

    原武耕平, 重光学道, 西嶋正憲, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2005 

  • ArFレーザーを用いたPLD法によるBi(Fe<sub>x</sub>Al<sub>1-x</sub>)O<sub>3</sub>薄膜の作製

    岡田守弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2004 

  • 磁性強誘電体YMnO<sub>3</sub>薄膜の低温誘電特性と磁気特性との相関

    坂田浩憲, 重光学道, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2004 

  • 強磁性強誘電体(Y,Yb)MnO<sub>3</sub>薄膜の作製

    重光学道, 坂田浩憲, 吉村武, 藤村紀文, 中山忠親, 新原こう一

    応用物理学関係連合講演会講演予稿集  2004 

  • 大気圧非平衡プラズマを用いたSi酸窒化膜のI-V特性に及ぼす過剰窒素の効果

    早川竜馬, 中永麻理, 吉村武, 藤村紀文, 北畠裕也, 上原剛

    応用物理学会学術講演会講演予稿集  2004 

  • 優れた分極特性を有するYMnO<sub>3</sub>薄膜を用いたMFISエピタキシャルキャパシタの作製

    原武耕平, 重光学道, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2004 

  • ZnMnOエピタキシャル膜の誘電特性及び磁気特性に及ぼす電界効果

    大塩武士, 益子慶一郎, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2004 

  • ZnMnO/ZnOヘテロ界面における輸送特性と電子状態

    益子慶一郎, 大塩武士, 芦田淳, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2004 

  • YMnO<sub>3</sub>薄膜の磁性-強誘電性相関現象

    重光学道, 吉村武, 芦田淳, 藤村紀文

    応用物理学会学術講演会講演予稿集  2004 

  • YMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Siの漏れ電流特性の解析とその記憶保持特性との相関

    吉村武, 原武耕平, 重光学道, 坂田浩憲, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2004 

  • SrTiO<sub>3</sub>基板上のBa(Fe,Zr)O<sub>3</sub>エピタキシャル薄膜における電気伝導特性

    竹谷英一, 松井利之, 吉村武, 藤村紀文, 森井賢二

    応用物理学会学術講演会講演予稿集  2004 

  • Si(111)基板上へのSi:Ce及びY<sub>2</sub>O<sub>3</sub>薄膜のヘテロエピタキシャル成長

    吉水康人, 寺尾岳見, 浜崎智, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2004 

  • PLD法により作製したBi(Fe<sub>x</sub>Al<sub>1-x</sub>)O<sub>3</sub>薄膜の構造解析と誘電特性

    岡田守弘, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2004 

  • ArFレーザーを用いたPLD法によるSi(111)基板上へのY<sub>2</sub>O<sub>3</sub>エピタキシャル薄膜の作製

    原武耕平, 神園剛, 吉村武, 藤村紀文

    応用物理学関係連合講演会講演予稿集  2004 

  • Bi-Al-O系化合物の作製とその誘電特性

    岡田守弘, 伊藤大輔, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  2003 

  • 強誘電体ゲートキャパシタのD-E特性

    吉村武, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  2003 

  • 低温成長YMnO<sub>3</sub>薄膜の構造解析と誘電特性

    坂田浩憲, 伊藤大輔, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  2003 

  • エピタキシャル(La<sub>x</sub>Y<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/Si(111)薄膜の結晶構造とその誘電特性

    神園剛, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  2003 

  • YMnO<sub>3</sub>薄膜の欠陥と誘電特性との相関

    坂田浩憲, 重光学道, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2003 

  • YMnO<sub>3</sub>薄膜のAサイト置換が強誘電性および磁性に及ぼす影響

    重光学道, 坂田浩憲, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2003 

  • YMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si MFISキャパシタの記憶保持特性とキャリア放出との相関

    伊藤大輔, 藤村紀文, 吉村武, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  2003 

  • SrTiO<sub>3</sub>基板上のBaFeO<sub>3</sub>薄膜における磁性の磁気異方性評価

    竹谷英一, 松井利之, 吉村武, 藤村紀文, 森井賢二

    日本金属学会講演概要  2003 

  • SrTiO<sub>3</sub>基板上のBaFeO<sub>3</sub>のエピタキシャル薄膜における電気伝導の温度依存性

    竹谷英一, 松井利之, 吉村武, 藤村紀文, 森井賢二

    応用物理学会学術講演会講演予稿集  2003 

  • PLD法によるBiFeO<sub>3</sub>-BiAlO<sub>3</sub>薄膜の作製とその評価

    岡田守弘, 吉村武, 藤村紀文

    応用物理学会学術講演会講演予稿集  2003 

  • Properties of MFIS capacitors with YMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si epitaxial structure.

    藤村紀文, 吉村武, 伊藤大輔, 伊藤太一郎

    電気学会電子材料研究会資料  2002 

  • RMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si構造のC-V特性の改善 (I)

    伊藤大輔, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  1999 

  • レーザーアブレーション法によるZnO:X薄膜の作製と誘電特性

    志村環, 若野寿史, 吉村武, 藤村紀文, 伊藤太一郎, かけひ芳治, 日下忠興, 岡本昭夫, 井上幸二

    応用物理学会学術講演会講演予稿集  1999 

  • レーザーアブレーション法によるZnO:X薄膜の作製と誘電特性

    志村環, 若野寿史, 吉村武, 藤村紀文, 伊藤太一郎, かけひ芳治, 日下忠興, 岡本昭夫, 井上幸二

    応用物理学関係連合講演会講演予稿集  1999 

  • パルスC-V測定法によるMFIS構造の評価

    吉村武, 伊藤大輔, 藤村紀文, 伊藤太一郎

    応用物理学会学術講演会講演予稿集  1999 

  • Y<sub>2</sub>O<sub>3</sub>/Si構造の界面制御によるC-V特性の改善

    伊藤大輔, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学会学術講演会講演予稿集  1999 

  • RMnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si構造のC-V特性の改善 (II)

    吉村武, 伊藤大輔, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  1999 

  • Effects of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO<inf>3</inf>

    Tamaki Shimura, Norifumi Fujimura, Shigeki Yamamori, Takeshi Yoshimura, Taichiro Ito

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  1998.09 

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    We proposed the use of RMnO3 (R: rare-earth elements) for metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) type ferroelectric random access memories (Ferroelectric RAMs). To decrease the leakage current in this material, the effects of nonstoichiometry and A-site substitution were studied. Current-voltage characteristics revealed that the carriers in the RMnO3 originate in excess oxygen and show Frenkel-Poole-type emission. Significant grain growth was observed in the Mn-rich composition. In particular, Mn-rich YbMnO3 shows the lowest leakage current and the best frequency dependence of dielectric permittivity.

  • Fabrication of YbMnO<sub>3</sub> films on Y<sub>2</sub>O<sub>3</sub>/Si by Pulsed Laser Deposition Method.

    吉村武, 伊藤大輔, 藤村紀文, 伊藤太一郎

    応用物理学会学術講演会講演予稿集  1998 

  • Investigation of Y2O3 buffer layers for YMnO3MFIS-FET.

    高岡将樹, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  1998 

  • Preferential growth of Y<sub>2</sub>O<sub>3</sub> thin films on SiO<sub>2</sub>/Si(100).

    伊藤大輔, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学会学術講演会講演予稿集  1998 

  • Fabrication of YMnO<inf>3</inf> thin films on Si substrates by a pulsed laser deposition method

    Takeshi Yoshimura, Norifumi Fujimura, Nobuaki Aoki, Kouzo Hokayama, Shigeki Tsukui, Keisuke Kawabata, Taichiro Eto

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  1997.09 

    　More details

    We have proposed ReMnO3 (Re: Rare earth elements) films for metal-ferroelectric-semiconductor field effect transistor-(MFSFET) type ferroelectric random access memories (Ferroelectric RAMs). For this kind of application, since ReMnO3 films must be fabricated directly on Si substrates, this wrote focuses on the fabrication of YMnO3 films on Si substrates with and without buffer layers. Although only amorphous YMnO3 films are obtained without buffer layers, crystalline films are obtained using Y-Mn-O buffer layers deposited without introducing oxygen. YMnO3 films can be epitaxially grown on the top of epitaxial Y2O3 on (111)Si. For both crystalline YMnO3 films, although hysteresis behavior in D-E measurement is observed, remanent polarizations are quite small. The role of buffer layers on the thin film growth of YMnO3 on (111)Si is discussed.

  • Application of YMnO3 for ferroelectric memory. Study on dielectric properties and electronic conduction mechanisms on bulks.

    山盛茂樹, 志村環, 吉村武, 藤村紀文, 伊藤太一郎

    応用物理学会学術講演会講演予稿集  1997 

  • Fablication of YMnO3 thin films by Magnetron Sputtering Method.

    藤村紀文, 東修一郎, 吉村武, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  1996 

  • Fablication of YMnO3 thin films by the Pulsed Laser Abrasion Method.

    藤村紀文, 東修一郎, 吉村武, 伊藤太一郎

    応用物理学関係連合講演会講演予稿集  1996 

  • Change in structure of BaTiO3 epitaxial films with the film growth.

    藤村紀文, 吉村武, LEE S, 伊藤太一郎

    応用物理学会学術講演会講演予稿集  1995 

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Collaborative research (seeds) keywords

  • 圧電体物性

  • 誘電体物性

  • 不揮発性メモリ

  • 半導体デバイス

  • 強誘電体物性

  • 薄膜物性評価

  • 薄膜構造評価

  • 薄膜作製技術

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Outline of collaborative research (seeds)

  • 圧電体薄膜の開発およびその応用

  • MEMSデバイスの開発

  • 薄膜トランジスタの開発

  • 強誘電体薄膜を利用した電子デバイスの開発

  • 強誘電体物性

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