掲載種別：研究論文（学術雑誌）   共著区分：共著   国際・国内誌：国際誌  

DOI： 10.1103/xwds-q3w8

担当区分：筆頭著者   掲載種別：研究論文（学術雑誌）   国際・国内誌：国際誌  

Mn3Sn is an AHE antiferromagnet exhibiting a hysteretic anomalous Hall effect (AHE) originating from the cluster octupole moments of inverse triangular antiferromagnetic spins at room temperature, whereas the AHE disappears at low temperatures. In this study, we evaluated the systematic doping effect on the AHE of Mn3Sn to stabilize the AHE at low temperatures. We grew single crystals of M0.1Mn2.9Sn and Mn3Sn0.9X0.1 (M = Cr and Fe; X = Si and Ge) and evaluated their transport and magnetic properties. Compared with doping at the Sn site, doping at the Mn site drastically changes the AHE at low temperatures. Reproducible magnetic structures were not observed at low temperatures owing to low Fe content fluctuation near x ∼ 0.1 in FexMn3-xSn. Some crystals showed a large hysteretic-type AHE, unlike the AHE at 300 K, while others did not show a finite AHE below 50 K. Conversely, Cr doping stabilizes the AHE with additional magnetoresistance that hinders observing the AHE. Considering these features, we prepared Cr and Fe codoped Mn3Sn crystals. The Fe0.05/Cr0.1-doped Mn3Sn crystals showed the AHE from room temperature to 2 K without magnetic transitions. This finding provides a new route to access octupole-driven phenomena of Mn3Sn-based devices at low temperatures.

DOI： 10.1021/acs.cgd.4c00104

担当区分：筆頭著者   掲載種別：研究論文（学術雑誌）   国際・国内誌：国際誌  

Mn3Sn is an anomalous Hall effect (AHE) antiferromagnet that exhibits the hysteretic AHE in antiferromagnetic (AFM) phase at room temperature. We report that whisker Mn3Sn crystals grown by the flux method exhibit a non-hysteretic AHE at mid-to-low temperatures when the whisker Mn3Sn is surrounded by a thin layer of ferromagnetic Mn2−xSn. These crystals exhibit a hysteretic AHE above 275 K due to the spin alignment of the inverse triangular lattice, which is similar to other crystals. However, upon cooling the crystal, it exhibits a non-hysteretic AHE with a spiral AFM spin structure at 100-200 K. We concluded that the non-hysteretic AHE is induced at the interface of Mn2−xSn/Mn3Sn. We believe that the scalar-spin chirality in the spiral AFM phase of Mn3Sn, modulated by Mn2−xSn through the magnetic proximity effect, produces the AHE. This discovery opens a new avenue for tailoring the AHE by magnetic layers.

DOI： 10.1063/5.0195211

J-GLOBAL

J-GLOBAL

J-GLOBAL

会議種別：口頭発表（招待・特別）  

開催地：Yokohama,