Best Poster Presentation Award

Shinji Kanda, Satoshi Masuya, Makoto Kasu, Naoteru Shigekawa, Jianbo Liang

2019.05   The organizing committee of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Fabrication of Diamond/Cu Direct Bonding for Power Device Application

Best Presentation Award

Yutaka Ohno, Reina Miyagawa, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

2019.05   The organizing committee of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature

Tuning the Interlayer Microstructure and Residual Stress of Buffer-Free Direct Bonding GaN/Si Heterostructures Reviewed International coauthorship

Yan Zhou, Shi Zhou, Shun Wan, Bo Zou, Yuxia Feng, Rui Mei, Heng Wu, Naoteru Shigekawa, Jianbo Liang, Pingheng Tan, and Martin Kuball

Applied Physics Letter   122 ( 082103 )   2023.02

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding Reviewed International coauthorship

Shi Zhou, Shun Wan, Bo Zou, Yanping Yang, Huarui Sun, Yan Zhou, and Jianbo Liang

Crystals   13 ( 217 )   1 - 11   2023.01

Room-temperature bonding of GaN and diamond via a SiC layer Invited Reviewed

Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

Functional diamond   2 ( 142 )   142 - 150   2022.12

High Thermal conductivity in wafer-scale cubic silicon carbide crystals Reviewed International coauthorship

Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hao Zhou, Hidetoshi Asamura, Hiroki Uratani, Janak Tiwari, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Tianli Feng, Naoteru Shigekawa, and David G. Cahill

Nature Communications   13   7201   2022.11（ ISSN:2041-1723 ）

Heterojunctions fabricated by surface activated bonding-dependence of their nanostructural and electrical characteristics on thermal process Invited Reviewed

Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

Japanese Journal of Applied Physics   61 ( 12 )   120101   2022.10

Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding Reviewed

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa

Diamond & Related Materials   130   109425   2022.10

常温におけるダイヤモンドと異種材料の直接接合 Invited Reviewed

梁剣波,大野裕,重川直輝

日本金属学会会報   61 ( 6 )   334 - 339   2022.06

Quantitative capacitance measurements in frequency modulation electronic force microscopy Reviewed

Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa, Takuji Tahahashi

Japanese Journal of Applied Physics   61   SL1005-1 - SL1005-7   2022.05

Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes Reviewed

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   61   SF1009-1 - SF1009-9   2022.04

Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates Reviewed

Yonekura Kenya, Kawamoto Tasuku, Liang Jianbo, Eiji Shikoh, Koichi Maezawa, and Naoteru Shigekawa

Japanese Journal of Applied Physics   61   SF1008-1 - SF1008-4   2022.04

Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding Invited Reviewed

Ohno Yutaka, Jianbo Liang, Yoshida Hideto, Shimizu Yasuo, Nagai Yasuyoshi, and Shigekawa Naoteru

Japanese Journal of Applied Physics   61   SF1006-1 - SF1006-5   2022.04

Intrinsic luminescence-downshifting effects of Zn-based Mn-doped nanoparticle layers on Si Solar Cells Reviewed

Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, Kim DaeGwi, Yong-Gu Shim, and Naoteru Shigekawa

Japanese Journal of Applied Physics   61   062004-1 - 062004-6   2022.03

AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process Reviewed

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

Applied Physics Express   15   041003-1 - 041003-5   2022.03

Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications Reviewed

Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

Japanese Journal of Applied Physics   61   SF1001-1 - SF1001-8   2022.03

Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties Reviewed

Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Tahahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki

AIP Journal of Applied Physics   13   074501-1 - 074501-9   2022.02

Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties Reviewed International coauthorship

Yota Uehigashi , Shinya Ohmagari , Hitoshi Umezawa , Hideaki Yamada , Jianbo Liang , Naoteru Shigekawa

Diamond & Related Materials   120   108665-1 - 108665-6   2021.10

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design Reviewed International coauthorship

Jianbo Liang, Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Seong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, and Naoteru Shigekawa

Advanced Materials   33 ( 21045 )   2104564-1 - 2104564-13   2021.09

Room temperature direct bonding of diamond and InGaP in atmospheric air Reviewed

Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Hongxing Wang, Naoteru Shigekawa

Functional Diamond   1 ( 1 )   110 - 116   2021.02

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications Reviewed

Jianbo Liang, Yuji Nakamura, Tianzhuo Zhan, Yutaka Ohno, Yasuo Shimizu, Kazu Katayama, Takanobu Watanabe, Hideto Yoshida, Yasuyoshi Nagai, Hongxing Wang, Makoto Kasu, Naoteru Shigekawa

Diamond and Related Materials   111   108207   2020.11

III-V Thin Film Solar Cells Bonded to Si substrate via Metal Grids Reviewed International coauthorship

Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa

ECS Transaction   98 ( 4 )   117 - 123   2020.10

Nanostructural Investigation on GaAs//Indium Tin Oxide /Si Junctions for III-V-on-Si Hybrid Multijunction Cells Reviewed

Tomoya Hara, Jianbo Liang, Kenji Araki, Takefumi Kamioka, Kentaro Watanabe, Masakazu Sugiyama, Naoteru Shigekawa

ECS Transaction   98 ( 4 )   125 - 133   2020.10

Low-Temperature Direct Bonding Technologies of Semiconductor Substrates Invited Reviewed

Naoteru Shigekawa, Jianbo Liang

The IEICE Transaction on Electronics   J103-C ( 7 )   341 - 348   2020.07

Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces Reviewed

Yutaka Ohnoa, Jianbo Liangb, Naoteru Shigekawab, Hideto Yoshidac, Seiji Takedac, Reina Miyagawad, Yasuo Shimizue, Yasuyoshi Nagai

Applied Surface Science   525   146610   2020.05

Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells Reviewed International coauthorship

Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang, and Akira Yasui

Solar Energy Materials and Solar Cells   210   110501   2020.03

Characterization of nanoscopic Cu/diamond interfaces prepared by surface activated bonding: Implications for thermal management Reviewed

J. Liang, Y. Ohno, Y. Yamashita, Y. Shimizu, S. Kanda, N. Kamiuchi, S.-W. Kim, K. Koyama, Y. Nagai, M. Kasu, N. Shigekawa

ACS Applied Nano Materials   3 ( 3 )   2455 - 2462   2020.03

Fabrication of diamond/Cu direct bonding for power device applications Reviewed

S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, J. Liang

Japanese Journal of Applied Physics   59 ( SB )   SBBB03/1 - SBBB03/5   2020.02

Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding Reviewed

Yutaka Ohno, Hideto Yoshida, Naoto Kamiuchi, Ryotaro Aso, Seiji Takeda, Yasuo Shimizu, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa

Japanese Journal of Applied Physics   59   SBBB05-1 - SBBB05-5   2020.02

Low-resistance semiconductor/semiconductor junctions with intermediate metal grids for III-V-on-Si multijunction solar cells Reviewed International coauthorship

Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   59 ( SB )   SBBB04   2019.11

Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies Reviewed International coauthorship

1. Keita Matsuura, Jianbo Liang, Koichi Maezawa, and Naoteru Shigekawa

IEEE Transactions on Electron Devices   66 ( 9 )   3946 - 3952   2019.07

Macroscale synthesis of CuO nanowires on FTO plane substrate Reviewed International coauthorship

1. Yota Mabuchi, Rashid Norhana Mohamed, Xuyang Li, Jianbo Liang, Naoki Kishi, and Tetsuo Soga

Modern Physics Letters B   33   1950138   2019.04

Annealing effect of surface-activated bonded diamond/Si interface Reviewed

Jianbo Liang, Yan Zhou, Satoshi Masuya, Filip Gucmann, Manikant Singh, James Pomeroy, Seongwoo Kim, Martin Kuball, Makoto Kasu, Naoteru Shigekawa

Diamond & Related Materials   93   187 - 192   2019.02

Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding Reviewed International coauthorship

Shoji Yamajo, Sanji Yoon, Jianbo Liang, Hassanet Sodabanlu, Kentaro Watanabe, Masakazu Sugiyama, Akira Yasui, Eiji Ikenaga, and Naoteru Shigekawa

Applied Surface Science   473   627 - 632   2018.12

Stability of diamond/Si bonding interface during device fabrication process Reviewed International coauthorship

Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, and Naoteru Shigekawa

Applied Physics Express   12   016501-1 - 016501-5   2018.11

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Reviewed

Sho Morita, Jianbo Liang, Naoteru Shigekawa

ECS Transactions   86 ( 5 )   137 - 142   2018.10

Room-temperature direct bonding of diamond and Al Reviewed International coauthorship

Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

Scripta Materialia   159   58 - 61   2018.09

Electrical properties of GaAs//indium tin oxide /Si junctions for III-V-on-Si hybrid multijunction cells Reviewed International coauthorship

Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

Japanese Journal of Applied Physics   57 ( 8S3 )   08RD05-1 - 08RD05-6   2018.07

GaAs/indium tin oxide/Si bonding junctions for III-V-on-Si hybrid multijunction cells with low series resistance Reviewed International coauthorship

Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takefumi Kamioka, Kenji Araki, and Masafumi Yamaguchi

IEEE Journal of Photovoltaics   pp ( 99 )   1 - 8   2018.03

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding Reviewed

Morita Sho, Liang Jianbo, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

Japanese Journal of Applied Physics   57 ( 2 )   2018.02（ ISSN:0021-4922 ）

Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces Reviewed International coauthorship

Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai

Japanese Journal of Applied Physics   57 ( 2S1 )   02BE04-1 - 02BE04-5   2018.01

Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding Reviewed International coauthorship

Jianbo Liang, Tomoki Ogawa, Tomoya Hara, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

Japanese Journal of Applied Physics   57 ( 2S1 )   02BE03-1 - 02BE03-5   2018.01

Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions Reviewed International coauthorship

Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   57 ( 2S1 )   02BE02-1 - 02BE02-5   2017.12

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding Reviewed International coauthorship

Sho Morita, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, and Naoteru Shigekawa

Japanese Journal of Applied Physics   57 ( 2S1 )   02BE01-1 - 02BE01-5   2017.11

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature Reviewed International coauthorship

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   57 ( 2S1 )   02BA01-1 - 02BA01-3   2017.11

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices Reviewed International coauthorship

Jianbo Liang, Katsuya Furuna, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, and Naoteru Shigekawa

ECS Journal of Solid State Science and Technology   6 ( 9 )   P626 - P632   2017.08

Realization of direct bonding of single crystal diamond and Si substrates Reviewed International coauthorship

Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa

Applied Physics Letters   110 ( 11 )   111603-1 - 111603-4   2017.03

Determination of Band Structure at GaAs/SiC Heterojunctions International coauthorship

Jianbo Liang, Sae Shimizu, Manabu Arai, and Naoteru Shigekawa

Electrochemical Society Transaction   75 ( 9 )   221 - 227   2016.10

Ultra-Thick Metal Contact Fabrication Using Surface Activated Bonding International coauthorship

Jianbo Liang, Katuya Huruna, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

Electrochemical Society Transaction   75 ( 9 )   25 - 32   2016.10

Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment Reviewed International coauthorship

Jianbo Liang, Shota Nishida, Manabu Arai, and Naoteru Shigekawa

Journal of Applied Physics   120 ( 3 )   034504-1 - 034504-7   2016.06

Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding Reviewed International coauthorship

Li Chai, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   55 ( 6 )   068002-1 - 068002-3   2016.05

Mapping of Si/SiC hetero p-n Junctions Using ScanningInternal Photoemission Microscopy Reviewed International coauthorship

Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji Shiojima

Japanese Journal of Applied Physics   55 ( 3 )   04ER15-1 - 04ER15-4   2016.03

Investigation on the Interface Resistance of Si/GaAs Heterojunctions by Using Surface-Activated Bonding

Jianbo Liang, Li Chai, Shota Nishida, Masashi Morimoto, and Naoteru Shigekawa

Japanese Journal of Applied Physics   54   030211   2015

Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si

Shota Nishida, Jianbo Liang, Tomohiro Hayashi, Naoteru Shigekawa, and Manabu Arai

Japanese Journal of Applied Physics   54   030210   2015

Single phase CuO thin films prepared by thermal oxidation in air with water vapor

Jianbo Liang, XuYang Li, Naoki Kishi, and Tetsuo Soga

Advanced Materials Research   1109   544 - 548   2015

Impacts of annealing on electrical properties of Si/Si junctions by surface activated bonding

Masashi Morimoto, Jianbo Liang, Shota Nishida, and Naoteru Shigekawa

Japanese Journal of Applied Physics   54   030212   2015

4H-SiC/Si Heterojunction Bipolar Transistor Fabricated by Surface Activated Bonding

Jianbo Liang, Sae Shimizu, Shota Nishida, Naoteru Shigekawa, and Manabu Arai

ECS Solid State Letters   4   Q55   2015

Interface Characteristics of Si/Si Junctions by Using Surface-Activated Bonding

Syoji Yamajo, Masashi Morimoto, Jianbo Liang, and Naoteru Shigekawa

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)   62 - 63   2015

Fabrication and Characterization of Si-Based Bipolar Transistor Structures Using Low-Temperature Bonding

Sae Shimizu, Shota Nishida, Jianbo Liang, Manabu Arai, and Naoteru Shigekawa

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)   64 - 65   2015

Current-voltage and spectral-response characteristics of surface-activated-bonding based InGaP/GaAs/Si hybrid triple-junction cells

Naoteru Shigekawa, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto

Japanese Journal of Applied Physics   54   08KE03   2015

Growth of high-quality (111) oriented cuprous oxide thin films oxidized in water vapor

Jianbo Liang, XuYang Li, Naoki Kishi, and Tetsuo Soga

Advanced Materials Research   832   138 - 142   2014

Surface-activated-bonding-based InGaP-on-Si double-junction cells

Naoteru Shigekawa, Masashi Morimoto, Shota Nishida, and Jianbo Liang

Japanese Journal of Applied Physics   53   04ER05   2014

I-V characteristics in surface-activated Bonding based Si/SiC junctions at raised ambient temperatures

Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa, and Manabu Arai

Materials Science Forum   778-780   718 - 721   2014

Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding

Naoteru Shigekawa, Jianbo Liang, Noriyuki Watanabe, and Akio Yamamoto

Physica status solidi C   11   644 - 647   2014

Effect of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

J. Liang, S. Nishida, M. Arai, and N. Shigekawa

Applied Physics Letters   104   161604   2014

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   53   112301   2014

Hybrid triple-junction solar cells by surface activated bonding of III-V double-junction-cell heterostructures to ion-implantation-based Si cells

Naoteru Shigekawa, Li Chai, Masashi Morimoto, Jianbo Liang, et al.

40th IEEE Photovoltaic Specialists Conference   0534   2014

Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells

Naoteru Shigekawa, Jianbo Liang, Masashi Morimoto, and Shota Nishida

Electrochemical Society Transaction   64 ( 5 )   235 - 242   2014

Effects of Interface State Charges on the Electrical Properties of Si/SiC Heterojunctions

J. Liang, S. Nishida, T. Hayashi, M. Arai, and N. Shigekawa

Applied Physics Letters   105   151607   2014

Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface-Activated Bonding

Naoteru Shigekawa, Jianbo Liang, and Noriyuki Watanabe

IEEE Photovoltaic Specialists Conference   Proc. 39th   2470 - 2473   2013

Graphene synthesis by thermal chemical vapor deposition using solid precursor

Mohsin Ahmed, Naoki Kishi, Ryo Sugita, Akiji Fukaya, Ishwor Khatri, Jianbo Liang, Sharif Mohammad Mominuzzaman

Journal Material Science: Material Electron   24   2151   2013

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, and Naoteru Shigekawa

Applied Physics Express   6   021801   2013

Surface-activating-bonding-based low resistance Si/III-V junctions

J. Liang, S. Nishida, M. Morimoto, and N. Shigekawa

Electronics Letters   49   830   2013

Synthesis of cupric oxide nanowires on spherical surface by thermal oxidation method

Xuyang Li, Jianbo Liang, Naoki Kishi, and Tetsuo Soga

Materials Letters   96   192 - 194   2013

Band structures of Si/InGaP heterojunctions by using surface activated bonding

Jianbo Liang, Masashi Morimoto, Shota Nishida, and Naoteru Shigekawa

Physics Status Solidi C   10   1644 - 1647   2013

Electrical properties of Si/Si interfaces by using surface-activated bonding

J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, and N. Shigekawa

Journal of Applied Physics   114   183703   2013

Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor

JianBo Liang, Naoki Kishi, Tetsuo Soga, and Takashi Jimbo

Thin solid films   520   2679 - 2682   2012

Synthesis of highly-aligned cupric oxide nanowiers by thermal oxidation of copper foils

JianBo Liang, Naoki Kishi, Tetsuo Soga, and Takashi Jimbo

Journal of Nanomaterials   Article ID 268508   8 pages   2011

Cross-sectional characterization of Cupric Oxide Nanowires grown by Thermal Oxidation of Copper Foils

JianBo Liang, Naoki Kishi, Tetsuo Soga, and Takashi Jimbo

Applied Surface Science   257   62 - 66   2010

高効率パワー素子の実現に向けたダイヤモンドと異種材料の直接接合技術の開発 Invited

梁 剣波, 重川 直輝

化学工業社・ケミカルエンジニアリング   65 ( 8 )   469 - 474   2020.08

ダイヤモンドと異種材料の直接接合による高効率デバイスの実現 Invited

梁剣波, 重川直輝

日本出版制作センター・月刊 JETI   68 ( 6月 )   37 - 40   2020.05

Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature Reviewed

Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa

Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration   2 - 2   2019.06

次世代エレクトロニクスを拓くダイヤモンドと異種材料の直接接合 Reviewed

重川直輝　梁剣波

ニューダイヤモンドフォーラム   34 ( 4 )   3 - 5   2018.10

Electrical characteristics of Si/SiC junctions using surface activated bonding International journal

Tomohiro Hayashi, Jianbo Liang, Manabu Arai, and Noateru Shigekawa

IEICE Technical Report   115 ( 39 )   111 - 15   2015.11

Effects of annealing on the electrical characteristics of GaAs/GaAs junctions International journal

Li Chai, Jianbo Liang, and Naoteru Shigekawa

IEICE Technical Report   115 ( 329 )   105 - 109   2015.11

Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding International journal

LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

IEICE Technical Report   113 ( 329 )   27 - 30   2013.11

Investigation on the optimum MQW structure for InGaN/GaN solar cells International journal

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

IEICE Technical Report   113 ( 329 )   31 - 34   2013.11

Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding International journal

Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

IEICE Technical Report   113 ( 329 )   21 - 25   2013.11

Electrical Properties of Si-Based Heterojunctions by Surface-Activated International journal

LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

IEICE Technical Report   112 ( 328 )   1 - 5   2012.11

Low-Temperature Direct Bonding of Diamond—Approach for Fabricating Low-Thermal-Resistance Widegap Devices Invited International conference

Naoteru Shigekawa, Ryo Kagawa, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno and Yasuyoshi Nagai

2023 MRS Fall Meeting  2023.11  Materials Research Society

Fabrication of nitride/3C-SiC/polycrystalline diamond heterostructures for efficient thermal management of power devices International conference

Chiharu Moriyama, Keisuke Kawamura, Sumito Ouchi, Hiroki Uratani, Yutaka Ohno, Koji Inoue, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

14th International Conference on Nitride Semiconductors (ICNS 14)  2023.11  14th International Conference on Nitride Semiconductors (ICNS 14)

Thermal Transport in Cubic Silicon Carbide Crystals and Cross Integrated Interfaces International coauthorship International conference

Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Tianli Feng, Hidetoshi Asamura, Hiroki Uratani, Samuel Graham, David Cahill

International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterpACK 2023)  2023.10  International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterpACK 2023)

Integrating GaN with diamond for power devices with efficient thermal management Invited International conference

Jianbo Liang, Yutaka Ohno, and Naoteru Shigekawa

International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT 2023)  2023.10  IEEE-EPS-Taipei, iMAPS-Taiwan, ITRI, and TPCA

Fabrication and Electrical Characterization of GaAs/GaN Junctions International conference

Shota Ishimi, Makoto Hirose, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

244th ECS Meeting  2023.10  The Electrochemical Society

高放熱パワーデバイス応用に向けたGaN/3C-SiC on-polycrystalline diamond HEMTs構造の作製 Domestic conference

森山 千春、川村 啓介、大内 澄人、浦谷 泰基、大野 裕、井上 耕治、永井 康介、重川 直輝、梁 剣波

2023年第８４回応用物理学会秋季学術講演会  2023.09  応用物理学会

表面活性化接合法で作製したGaN/GaN界面近傍のケルビン・プローブ・フォース顕微鏡による断面計測 Domestic conference

文 思翰、澤井 一樹、梁 剣波、重川 直輝、高橋 琢二

2023年第８４回応用物理学会秋季学術講演会  2023.09  応用物理学会

Integration of 3C-SiC and polycrystalline diamond for large-scale high-performance GaN device production International conference

Jianbo Liang, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

33rd International Conference on Diamond and Carbon Materials (ICDCM 2023)  2023.09  Elsevier

Integration of Si and polycrystalline diamond by a surface-activated bonding method International conference

Jianbo Liang, Yoshiki Nishibayashi, Minori Teramoto, Marika Takeuchi, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

33rd International Conference on Diamond and Carbon Materials (ICDCM 2023)  2023.09  Elsevier

GaN HEMT on-diamond構造の作製及び特性評価 Domestic conference

早川 譲稀 , 大野 裕 , 永井 康介 , 重川 直輝 , 梁 剣波

第７０回応用物理学会春季学術講演会  2023.03  応用物理学会

α-Ga2O3/4H-SiC直接接合の作製と界面構造の評価 Domestic conference

山本 誠志郎 , 大島 祐一 , 大野 裕 , 永井 康 介 , 重川 直輝 , 梁 剣波

第７０回応用物理学会春季学術講演会  2023.03  応用物理学会

High Performance GaN-on-Diamond Devices Fabrication using Diamond Wafer Bonding Technology Invited International conference

Jianbo Liang, Yutaka Ohno, Naoteru Shigekawa

Hasselt Diamond Workshop 2023  2023.03 

転位発生源となるシリコン非対称傾角粒界の形成過程 Domestic conference

大野 裕 , 斉藤 光 , 梁 剣波 , 横井 達矢 , 松永 克 志 , 重川 直輝 , 井上 耕治 , 永井 康介 , 波多 聰

第７０回応用物理学会春季学術講演会  2023.03  応用物理学会

Direct Wafer Bonding of Nitride and its Application for Advanced Devices Invited International conference

Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

15th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanometerials 16th International Conference on Plasma-Nano Technology & Science  2023.03 

Characterization of GaN/ GaN Interfaces Fabricated by Surface-Activated Bonding International conference

Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai and Naoteru Shigekawa

15th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanometerials 16th International Conference on Plasma-Nano Technology & Science  2023.03 

AlGaN/GaN/3C-SiC-on-diamond high electron mobility transistors (HEMTs) fabrication by diamond room temperature bonding Invited International conference

Jianbo Liang

Symposium for Functional Diamond, International Diamond Conference  2022.11 

表面活性化接合法によるGaN/GaN接合界面の評価 Domestic conference

澤井 一樹、梁 剣波、清水 康雄、大野 裕、永井 康介、重川 直輝

第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

n+-Si/p-ダイヤモンドヘテロ接合ダイオードの耐熱性評価 Domestic conference

上東 洋太、大曲 新矢、梅沢 仁、山田 英明、梁 剣波、重川 直輝1

第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

高出力デバイス応用に向けたGaN/3C-SiC on-diamond HEMT構造の作製 Domestic conference

香川 諒、重川 直輝、梁 剣波、川村 啓介、坂井田 佳紀、大内 澄人、浦谷 泰基、清水 康夫、大野 裕、長井 康介

第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

表面活性化接合法で作製したn-Si/n-Siおよびp-Si/p-Si接合の二重バイアス変調静電引力顕微鏡による評価 Domestic conference

小林 大地、梁 剣波、重川 直輝、高橋 琢二

第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

Si太陽電池に対する高光学密度半導体ナノ粒子膜の堆積効果 Domestic conference

粟井 啓伍、井筒 由紀、梁 剣波、西村 悠陽、金 大貴、沈 用球、重川 直輝

第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

パワー素子の放熱向上に向けたGa2O3/3C-SiC直接接合の特性評価 Domestic conference

長井 啓、川村 啓介、浦谷 泰基、坂井田 佳紀、重川 直輝、梁 剣波

第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding International conference

Zexin Wan, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Fabrication of GaN/SiC/diamond Structure for Efficient Thermal Management of Power Device International conference

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Coplanar Waveguides Fabricated by Directly Bonding Metal Foils to High-Resistivity Si Substrates International conference

Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, and Naoteru Shigekawa

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Polarization Inverted GaN/GaN Junctions Fabricated by Surface-Activated Bonding International conference

Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

High Temperature Stability of p+-Si/p-Diamond Heterojunction diodes International conference

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Fabrication of Ga2O3/3C-SiC Direct Bonding for Efficient Surface Heat Dissipation International conference

Hiromu Nagai, Keisuke Kawamura, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Fabrication and Characterization of GaN/Diamond Boding Interface International conference

Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Swong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Fabrication of Ga2O3/Si Direct Bonding Interface for High Power Device Applications International conference

JIanbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Structural Analysis of Diamond/Silicon Heterointerfaces Fabricated by Surface Activated Bonding at Room Temperature International conference

Yutaka Ohno, Jianbo Liang, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai, and Naoteru Shigekawa

2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

Ga2O3/Siヘテロ構造の作製及び構造評価 Domestic conference

髙月　大輝, 東脇　正高、清水　康雄、大野　裕、永井　康介、重川　直輝、梁　剣波

第８２回応用物理学会秋季学術講演会  2021.09 

Direct bonding of diamond to semiconductors and metals for low thermal resistance modules Invited International conference

Naoteru Shigekawa and Jianbo Liang

31st International Conference on Diamond and Carbon Materials (ICDCM 2021)  2021.09 

Low-temperature direct wafer bonding innovating CS device technologies Invited International conference

Naoteru Shigekawa and Jianbo Liang

International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH 2021)  2021.05 

Formation process of high thermal-stability diamond/Si and diamond/GaAs heterointerfaces by surface activated bonding Domestic conference

Yutaka Ohno, Jianbo Liang, Yasuo Shimizu, Hideto Yoshida, Naoteru Shigekawa

Materials Research Society (MRS)  2020.11 

Microscopic picture of direct bonding via surface activation for low-resistance Si/wide-gap semiconductor heterointerfaces International conference

Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Hideto Yoshida, Reina Miyagawa, Yasuo Shimizu, and YasuyoshiNagai

Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME)  2020.10 

Direct bonding of GaAs and diamond for high power device applications International conference

Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Tianzhuo Zhan, Takanobu Watababe, NaotoKamiuchi, Yasuyoshi Nagai, and Naoteru Shigekawa

Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME)   2020.10 

Structural analysis of Si/diamond heterointerfaces fabricated by surface activated bonding using LT-FIB and STEM International conference

Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai

Global Institute for Materials Research Tohoku Joint International Symposium on Radiation Effects in Materials and Actinide Science 2020 (GIMRT-REMAS2020)  2020.09 

How to fabricate low-resistance heterointerfaces for tandem cells by direct bonding at low temperatures Domestic conference

Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Hideto Yoshida, Reina Miyagawa, Yasuo Shimizu, Yasuyoshi Nagai

37th European PV Solar Energy Conference and Exhibition (EU-PVSC)  2020.09 

ダイヤモンドと異種材料の直接接合による高効率デバイスの実現 Domestic conference

梁 剣波

科学技術振興機構、大阪市立大学、大阪府立大学、兵庫県立大学主催新技術説明会  2019.11 

GaAs/Diamond 直接接合の界面評価 Domestic conference

中村 祐志, 清水 康雄, 大野 裕, 詹 天卓, 山下 雄一郎, 白崎 謙次, 永井 康介, 渡邊 孝信, 嘉数 誠, 重川 直輝, 梁 剣波

第８０回応用物理学会秋季学術講演会  2019.09 

高出力パワーデバイス応用に向けた GaN/Diamond 直接接合の作製 Domestic conference

梁 剣波，清水 康雄，大野 裕, 白崎 謙次， 永井 康介, 嘉数 誠, 金 聖祐, Martin Kuball, 重川 直輝

第８０回応用物理学会秋季学術講演会  2019.09 

InGaP/ITO 界面における熱処理効果 Domestic conference

崎原 盛偉，梁 剣波，重川 直輝

第８０回応用物理学会秋季学術講演会  2019.09 

ELO 法及び SAB 法による GaAs/Si 2 接合太陽電池の作製 Domestic conference

小園 亮, 梁 剣波, 渡辺 健太郎, 杉山 正和, 重川 直輝

第８０回応用物理学会秋季学術講演会  2019.09 

直接接合された表面実装型 LED パッケージにおける素子温度評価 Domestic conference

小丸 啓吾,梁 剣波,西尾 佳高, 重川 直輝

第８０回応用物理学会秋季学術講演会  2019.09 

表面活性化接合で作成したSi/GaAs界面の低温FIB法による断面TEM評価 Domestic conference

大野裕, 清水康雄, 永井康介, 麻生亮太郎, 神内直人, 吉田秀人, 梁剣波, 重川直輝

第８０回応用物理学会秋季学術講演会  2019.09 

ELO 法及び SAB 法による GaAs/Si 2 接合太陽電池の作製 Domestic conference

小園 亮、梁 剣波、渡辺 健太郎、杉山 正和、重川 直輝

第８０回応用物理学会秋季学術講演会  2019.09 

Si太陽電池に対するMnドープ半導体ナノ粒子の堆積効果 Domestic conference

井筒由紀, 田中駿, 梁剣波, 楢崎友城, 西村悠陽, 金大貴, 重川直輝

第８０回応用物理学会秋季学術講演会  2019.09 

表面活性化接合で形成した Si/GaAs 界面の低温 FIB 法によるアトムプローブ評価 Domestic conference

清水 康雄, 海老澤 直樹, 大野 裕, 梁 剣波, 重川 直輝, 永井 康介

第８０回応用物理学会秋季学術講演会  2019.09 

Si太陽電池に対するMnドープ半導体ナノ粒子の堆積効果 Domestic conference

井筒由紀, 田中駿, 梁剣波, 楢崎友城, 西村悠陽, 金大貴, 重川直輝

第８０回応用物理学会秋季学術講演会  2019.09 

Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures International conference

Yutaka OHNO, Yasuo SHIMIZU, Naoki EBISAWA, Koji INOUE, Yasuyoshi NAGAI, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Jianbo LIANG, and Naoteru SHIGEKAWA

Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019)  2019.09 

Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures Domestic conference

Yutaka OHNO, Yasuo SHIMIZU, Naoki EBISAWA, Koji INOUE, Yasuyoshi NAGAI, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Jianbo LIANG, Naoteru SHIGEKAWA

Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019)  2019.09 

Fabrication of GaAs/diamond direct bonding for high power device applications International conference

Y. NAKAMURA, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA, and Jianbo LIANG

13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

Fabrication of GaAs/diamond direct bonding for high power device applications Domestic conference

Y. NAKAMURA, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA, Jianbo LIANG

13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications International conference

Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications Domestic conference

Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, Naoteru SHIGEKAWA

13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding International conference

Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, and Naoteru SHIGEKAWA

30th International Conference on Defects in Semiconductors (ICDS30)  2019.07 

Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding Domestic conference

Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, Naoteru SHIGEKAWA

30th International Conference on Defects in Semiconductors (ICDS30)  2019.07 

Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates International conference

Shoji YAMAJO, Jianbo LIANG, and Naoteru SHIGEKAWA

13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates Domestic conference

Shoji YAMAJO, Jianbo LIANG, Naoteru SHIGEKAWA

13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature International conference

Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature Domestic conference

Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, Naoteru SHIGEKAWA

13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

高出力パワーデバイスに向けたダイヤモンドと異種材料の直接接合 Invited Domestic conference

梁　剣波

独立行政法人日本学術振興会接合界面創成技術第191委員会第２２回研究会  2019.07 

高出力パワーデバイスに向けたダイヤモンドと異種材料の直接接合 Domestic conference

梁 剣波

独立行政法人日本学術振興会接合界面創成技術第191委員会第２２回研究会  2019.07 

Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells International conference

Yuki IDUTSU, Shun TANAKA, Liang JIANBO, Tomoki NARAZAKI, Hisaaki NISHIMURA, DaeGwi KIM, Naoteru SHIGEKAWA

The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells Domestic conference

Yuki IDUTSU, Shun TANAKA, Liang JIANBO, Tomoki NARAZAKI, Hisaaki NISHIMURA, DaeGwi KIM, Naoteru SHIGEKAWA

The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions International conference

Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions Domestic conference

Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

Direct bonding of diamond and dissimilar materials for power device applications Invited International conference

Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Naoki EBISAWA, Yasuyoshi NAGAI, Makoto KASU, and Naoteru SHIGEKAWA

2019 International Symposium on Single Crystal Diamond and Electronics (SCDE 2019)  2019.06 

Direct bonding of diamond and dissimilar materials for power device applications Domestic conference

Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Naoki EBISAWA, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA

2019 International Symposium on Single Crystal Diamond and Electronics (SCDE 2019)  2019.06 

Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam International conference

Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Fabrication of Diamond/Cu Direct Bonding for Power Device Application Domestic conference

Shinji KANDA, Satoshi MASUYA, Makoto KASU, Naoteru SHIGEKAWA, Jianbo LIANG

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions Domestic conference

Takashi HISHIDA, Jianbo LIANG, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance Domestic conference

Moritake SAKIHARA, Jianbo LIANG, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding Domestic conference

Shotaro HORIKAWA, Sho MORITA, Jianbo LIANG, Yoshihisa KANEKO, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding Domestic conference

Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, Yasuyoshi NAGAI

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam Domestic conference

Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance International conference

Moritake SAKIHARA, Jianbo LIANG, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding International conference

Shotaro HORIKAWA, Sho MORITA, Jianbo LIANG, Yoshihisa KANEKO, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions International conference

Takashi HISHIDA, Jianbo LIANG, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Fabrication of Diamond/Cu Direct Bonding for Power Device Application International conference

Shinji KANDA, Satoshi MASUYA, Makoto KASU, Naoteru SHIGEKAWA, and Jianbo LIANG

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding International conference

Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, and Yasuyoshi NAGAI

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

A polyimide film/aluminum foil junction by modified surface activated bonding International conference

H. AKAZAWA, Jianbo LIANG, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS Domestic conference

Zexin WAN, Liang JIANBO, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

A polyimide film/aluminum foil junction by modified surface activated bonding Domestic conference

H. AKAZAWA, Jianbo LIANG, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS International conference

Zexin WAN, Liang JIANBO, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature International conference

Yutaka OHNO, Reina MIYAGAWA, Hideto YOSHIDA, Seiji TAKEDA, Jianbo LIANG, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature Domestic conference

Yutaka OHNO, Reina MIYAGAWA, Hideto YOSHIDA, Seiji TAKEDA, Jianbo LIANG, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Effect of annealing temperature on diamond/Si interfacial structure Domestic conference

Jianbo LIANG, Yan ZHUO, Satoshi MASUYA, Manikant SINGH, James POMEROY, Seongwoo KIM, Martin KUBALL, Makoto KASU, Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Effect of annealing temperature on diamond/Si interfacial structure International conference

Jianbo LIANG, Yan ZHUO, Satoshi MASUYA, Manikant SINGH, James POMEROY, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

Direct bonging of diamond and Cu at room temperature for power devise application International conference

Jianbo LIANG, Shinji KANDA, Satoshi MASUYA, Makoto KASU, and Naoteru SHIGEKAWA

13th New Diamond and Nano Carbons Conference  2019.05 

Direct bonging of diamond and Cu at room temperature for power devise application Domestic conference

Jianbo LIANG, Shinji KANDA, Satoshi MASUYA, Makoto KASU, Naoteru SHIGEKAWA

13th New Diamond and Nano Carbons Conference  2019.05 

パワーデバイス応用に向けたダイヤモンド/Cu 直接接合の形成 Domestic conference

梁 剣波，神田 進司，桝谷 聡士, 嘉数 誠, 重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

パワーデバイス応用に向けたダイヤモンド/Cu 直接接合の形成 Domestic conference

梁 剣波, 神田 進司, 桝谷 聡士, 嘉数 誠, 重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

パワーデバイス応用に向けたダイヤモンド/Cu 直接接合の形成 Domestic conference

梁 剣波，神田 進司，桝谷 聡士, 嘉数 誠, 重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

高出力デバイス応用に向けた GaAs/Diamond 直接接合の作製 Domestic conference

中村 祐志，桝谷 聡士, 嘉数 誠, 重川 直輝, 梁 剣波

第66回応用物理学会春季学術講演会  2019.03 

高出力デバイス応用に向けた GaAs/Diamond 直接接合の作製 Domestic conference

中村 祐志, 桝谷 聡士, 嘉数 誠, 重川 直輝, 梁 剣波

第66回応用物理学会春季学術講演会  2019.03 

表面活性化接合による GaAs/GaAs 界面における元素分布評価 Domestic conference

清水 康雄, 海老澤 直樹, 大野 裕, 梁 剣波, 重川 直輝, 井上 耕治, 永井 康介

第66回応用物理学会春季学術講演会  2019.03 

XPS による SiC/Si 接合界面の熱処理効果の評価 Domestic conference

万 澤欣, 梁 剣波, 重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

XPS による SiC/Si 接合界面の熱処理効果の評価 Domestic conference

万 澤欣，梁 剣波，重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

高出力デバイス応用に向けた GaAs/Diamond 直接接合の作製 Domestic conference

中村 祐志，桝谷 聡士, 嘉数 誠, 重川 直輝, 梁 剣波

第66回応用物理学会春季学術講演会  2019.03 

XPS による SiC/Si 接合界面の熱処理効果の評価 Domestic conference

万 澤欣，梁 剣波，重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

表面活性化接合による GaAs/GaAs 界面における元素分布評価 Domestic conference

清水 康雄，海老澤 直樹，大野 裕，梁 剣波，重川 直輝，井上 耕治，永井 康介

第66回応用物理学会春季学術講演会  2019.03 

表面活性化接合による GaAs/GaAs 界面における元素分布評価 Domestic conference

清水 康雄，海老澤 直樹，大野 裕，梁 剣波，重川 直輝，井上 耕治，永井 康介

第66回応用物理学会春季学術講演会  2019.03 

III-V/Si 多接合太陽電池の界面特性改善に向けた パターニング金属中間層 Domestic conference

菱田 貴史、梁 剣波、重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

III-V/Si 多接合太陽電池の界面特性改善に向けた パターニング金属中間層 Domestic conference

菱田 貴史, 梁 剣波, 重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

III-V/Si 多接合太陽電池の界面特性改善に向けた パターニング金属中間層 Domestic conference

菱田 貴史、梁 剣波、重川 直輝

第66回応用物理学会春季学術講演会  2019.03 

Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography International conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

2018 MRS Fall Meeting & Exhibit  2018.11 

Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

2018 MRS Fall Meeting & Exhibit  2018.11 

Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, Yasuyoshi NAGAI

2018 MRS Fall Meeting & Exhibit  2018.11 

Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, and Yasuyoshi NAGAI

2018 MRS Fall Meeting & Exhibit  2018.11 

Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

2018 MRS Fall Meeting & Exhibit  2018.11 

Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

2018 MRS Fall Meeting & Exhibit  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance International conference

Shunichi KONO, Jianbo LIANG and Naoteru SHIGEKAWA

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

Shoji YAMAJO, Jianbo LIANG, Naoteru SHIGEKAWA

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

Shunichi KONO, Jianbo LIANG, Naoteru SHIGEKAWA

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding International conference

Shoji YAMAJO, Jianbo LIANG and Naoteru SHIGEKAWA

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding International conference

Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

Shunichi Kono, Jianbo Liang, Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance International conference

Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa

International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding International conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

Summit of Materials Science  2018.10 

Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, Yasuyoshi NAGAI

Summit of Materials Science 2018 (SMS2018  2018.10 

Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

Summit of Materials Science  2018.10 

Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding International conference

Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, and Yasuyoshi NAGAI

Summit of Materials Science 2018 (SMS2018  2018.10 

Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

Summit of Materials Science  2018.10 

Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

Summit of Materials Science  2018.10 

Direct bonding of diamond and Si by surface activated bonding Invited International conference

Jianbo Liang

International Forum on Wide Bandgap Semiconductors  2018.10 

Direct bonding of diamond and Si by surface activated bonding Domestic conference

Jianbo Liang

International Forum on Wide Bandgap Semiconductors  2018.10 

Direct bonding of diamond and Si by surface activated bonding Domestic conference

Jianbo Liang

International Forum on Wide Bandgap Semiconductors  2018.10 

Direct bonding of diamond and Si by surface activated bonding Domestic conference

Jianbo Liang

International Forum on Wide Bandgap Semiconductors  2018.10 

Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding International conference

Jianbo Liang, Yan Zhou, Shoji Yamajor, Manabu Arai, Martin Kuball, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding Domestic conference

Jianbo Liang, Yan Zhou, Shoji Yamajor, Manabu Arai, Martin Kuball, Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature Domestic conference

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Domestic conference

Sho Morita, Jianbo Liang, Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding Domestic conference

Jianbo Liang, Yan Zhou, Shoji Yamajor, Manabu Arai, Martin Kuball, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Domestic conference

Sho Morita, Jianbo Liang, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature Domestic conference

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature Domestic conference

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding International conference

Sho Morita, Jianbo Liang, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature International conference

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

Si 太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

田中駿, 楢崎友城, 梁剣波, 金大貴, 重川直輝

第79回応用物理学会秋季学術講演会  2018.09 

Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

梁 剣波, 桝谷 聡士, 藤井 大樹, 金 聖祐, 嘉数 誠, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Si 太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

田中駿, 楢崎友城, 梁剣波, 金大貴, 重川直輝

第79回応用物理学会秋季学術講演会  2018.09 

Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

梁 剣波， 桝谷 聡士, 藤井 大樹, 金 聖祐, 嘉数 誠, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Si 太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

田中駿, 楢崎友城, 梁剣波, 金大貴, 重川直輝

第79回応用物理学会秋季学術講演会  2018.09 

Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

梁 剣波， 桝谷 聡士, 藤井 大樹, 金 聖祐, 嘉数 誠, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

表面活性化接合及び犠牲層エッチングによる GaAs/Si 2 接合太陽電池の作製 Domestic conference

小園 亮、尹 翔至、梁 剣波、重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

表面活性化接合及び犠牲層エッチングによる GaAs/Si 2 接合太陽電池の作製 Domestic conference

小園 亮, 尹 翔至, 梁 剣波, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線光電子分光評価 Domestic conference

原 智也, 梁 剣波, 荒木 健次, 神岡 武文, ソダーバンル ハッサネット, 渡辺 健太郎, 杉山 正和, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線光電子分光評価 Domestic conference

原 智也、梁 剣波、荒木 健次、神岡 武文、ソダーバンル ハッサネット、渡辺 健太郎、 杉山 正和、重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線光電子分光評価 Domestic conference

原 智也、梁 剣波、荒木 健次、神岡 武文、ソダーバンル ハッサネット、渡辺 健太郎、 杉山 正和、重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

表面活性化接合及び犠牲層エッチングによる GaAs/Si 2 接合太陽電池の作製 Domestic conference

小園 亮、尹 翔至、梁 剣波、重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

松本祐二、梁剣波、重川直輝

第79回応用物理学会秋季学術講演会  2018.09 

Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

松本祐二, 梁剣波, 重川直輝

第79回応用物理学会秋季学術講演会  2018.09 

Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

松本祐二、梁剣波、重川直輝

第79回応用物理学会秋季学術講演会  2018.09 

表面活性化接合法により作製したAl/ダイヤモンド接合界面の構造評価 Domestic conference

神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

第79回応用物理学会秋季学術講演会  2018.09 

表面活性化接合法により作製したAl/ダイヤモンド接合界面の構造評価 Domestic conference

神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

第79回応用物理学会秋季学術講演会  2018.09 

Ⅲ―Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入 Domestic conference

菱田 貴史, 梁 剣波, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Ar高速原子ビームのスパッタリング効果を用いたpolyimide/Al接合の実現 Domestic conference

赤澤 秀征, 梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Ⅲ―Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入 Domestic conference

菱田 貴史、梁 剣波、重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Ar高速原子ビームのスパッタリング効果を用いたpolyimide/Al接合の実現 Domestic conference

赤澤 秀征，梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Ar高速原子ビームのスパッタリング効果を用いたpolyimide/Al接合の実現 Domestic conference

赤澤 秀征，梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

Ⅲ―Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入 Domestic conference

菱田 貴史、梁 剣波、重川 直輝

第79回応用物理学会秋季学術講演会  2018.09 

表面活性化接合法により作製したAl/ダイヤモンド接合界面の構造評価 Domestic conference

神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

第79回応用物理学会秋季学術講演会  2018.09 

The combination of diamond devices with Si LSI by surface activated bonding International conference

Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa

29th International Conference on Diamond and Carbon on Materials  2018.09 

The combination of diamond devices with Si LSI by surface activated bonding Domestic conference

Jianbo Liang, Satoshi Masuya, Makoto Kasu, Naoteru Shigekawa

29th International Conference on Diamond and Carbon on Materials  2018.09 

The combination of diamond devices with Si LSI by surface activated bonding Domestic conference

Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa

29th International Conference on Diamond and Carbon on Materials  2018.09 

Room-Temperature Direct Bonding of Diamond and Aluminum International conference

Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

12th New Diamond and Nano Carbons Conference  2018.05 

Room-Temperature Direct Bonding of Diamond and Aluminum Domestic conference

Jianbo Liang, Shoji Yamajo, Martin Kuball, Naoteru Shigekawa

12th New Diamond and Nano Carbons Conference  2018.05 

Room-Temperature Direct Bonding of Diamond and Aluminum Domestic conference

Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

12th New Diamond and Nano Carbons Conference  2018.05 

Interfacial strength and fracture toughness in integrated semiconductor materials International conference

Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, and Martin Kuball

2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

Interfacial strength and fracture toughness in integrated semiconductor materials Domestic conference

Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, Martin Kuball

2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

Interfacial strength and fracture toughness in integrated semiconductor materials Domestic conference

Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, and Martin Kuball

2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

Interfacial strength and fracture toughness in integrated semiconductor materials Domestic conference

Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, and Martin Kuball

2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

金属箔を直接接合したセラミックス基板上の低損失コプレーナ線路の伝送特性評価 Domestic conference

松浦 圭汰、梁　剣波、前沢　宏一、重川　直輝

電子情報通信学会  2018.03 

p+-Siをゲート電極とする高耐熱AlGaN/GaN HEMT の作製 Domestic conference

鴻野 駿一, 梁 剣波, 重川 直輝

第65回応用物理学会春季学術講演会  2018.03 

Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価 Domestic conference

梁 剣波、Zhou Yan、Gucmann Filip、Singh Manikant、Pomeroy James、Kuball Martin、重川 直輝

第65回応用物理学会春季学術講演会  2018.03 

直接接合によるSiC/Si 界面特性の熱処理温度依存性 Domestic conference

下里 和史，梁 剣波，新井 学，重川 直輝

第65回応用物理学会春季学術講演会  2018.03 

Annealing effects on GaAs/ITO/Si junctions fabricated by surface activated bonding International conference

Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa

27th International Photovoltaic Science and Engineering Conference  2017.11 

GaAs single junction cells on Si substrates fabricated by surface activated bonding and etching of sacrificial layers International conference

Sanji Yoon, Jianbo Liang, and Naoteru Shigekawa

27th International Photovoltaic Science and Engineering Conference (PVSEC-27)  2017.11 

Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI International conference

Jianbo Liang, Satoshi Masuya, Makoto Kasu, Manikant Singh, Michael J. Uren, Martin Kuball, and Naoteru Shigekawa

12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)  2017.09 

Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates International conference

Keita Matsuura, Jianbo Liang, Koichi Maezawa, and Naoteru Shigekawa

2017 International Conference on Solid State Devices and Materials  2017.09 

Impacts of annealing on interfaces of Al foil/Si junctions by using surface activated bonding International conference

Katuya Huruna, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

2017 International Conference on Solid State Devices and Materials  2017.09 

GaN/GaAs 接合を用いた npn 構造の光電流測定 Domestic conference

山條 翔二、梁 剣波、ソダーバンル ハッサネット、渡辺 健太郎、杉山 正和、重川 直輝

第78回応用物理学会秋季学術講演会  2017.09 

Si 基板と接合した単結晶ダイヤモンドの残留応力評価 Domestic conference

梁 剣波、桝谷 聡士、嘉数 誠、Zhou Yan、Gucmann Filip、Singh Manikant、Pomeroy James、Kuball Martin、重川 直輝

第78回応用物理学会秋季学術講演会  2017.09 

室温表面活性化接合で作成した Si/GaAs 界面の熱処理による構造変化 Domestic conference

大野 裕、吉田 秀人、竹田 精治、梁 剣波、重川 直輝

第78回応用物理学会秋季学術講演会  2017.09 

ITOを中間層とするInGaP/GaAs/ITO/Si3接合太陽電池の特性評価 Domestic conference

原智也、小川智輝、梁剣波、荒木健次、神岡武文、山口真史、重川直輝

第78回応用物理学会秋季学術講演会  2017.09 

犠牲層エッチングによるⅢ-Ⅴ族薄層/Si接合の形成 Domestic conference

尹 翔至、梁 剣波、重川 直輝

第78回応用物理学会秋季学術講演会  2017.09 

Si太陽電池特性に対する半導体ナノ粒子の堆積効果 Domestic conference

田中 駿，浅川 良介，小川 智輝，楢崎 友城，梁 剣波, 金 大貴, 重川 直輝

第78回応用物理学会秋季学術講演会  2017.09 

Formation of contacts with high thermal tolerance by using Si/GaN junctions International conference

Jianbo Liang, Takuya Nishimura, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

12th International Conference on Nitride Semiconductors (ICNS’12)  2017.07 

Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions International conference

Syoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature International conference

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

Transport characteristics of Optically-Excited and Electrically-Injected Minority Electrons across p-Si/n-SiC Hetero-Interfaces International conference

Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai

2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding International conference

Jianbo Liang, Tomoki Ogawa, Tomoya Hara, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells International conference

Naoteru Shigekawa and Jianbo Liang

2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding International conference

Sho Morita, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells International conference

Naoteru Shigekawa and Jianbo Liang

2017 International Conference on Electronics Packaging (ICEP 2017)  2017.04 

Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価 Domestic conference

梁 剣波、Zhou Yan、Gucmann Filip、Singh Manikant、Pomeroy James、Kuball Martin、重川 直輝

第65回応用物理学会春季学術講演会  2017.03 

表面活性化ボンディング法によるAl箔/Si接合への熱処理効果 Domestic conference

古名克也、梁剣波、松原萌子、ダムリンマルワン、西尾佳高、重川直輝

第64回応用物理学会春季学術講演会  2017.03 

Si基板上GaAs/GaNヘテロ接合の縦方向電気特性評価(2) Domestic conference

山條翔二、梁剣波、重川直輝

第64回応用物理学会春季学術講演会  2017.03 

表面活性化接合法によるAl箔/n+-Si/n-GaN接合のコンタクト抵抗評価 Domestic conference

森田匠、西村拓也、梁剣波、松原萌子、ダムリンマルワン、西尾佳高、重川直輝

第64回応用物理学会春季学術講演会  2017.03 

表面活性化ボンディング法によるGaAs/ITO/Si接合のアニール温度依存性 Domestic conference

原 智也、小川 智輝、梁 剣波、荒木 健次、神岡 武文、重川 直輝

第64回応用物理学会春季学術講演会  2017.03 

InGaP/GaAs/Si３接合セルにおけるBonding 界面抵抗評価 Domestic conference

重川直輝、梁剣波

第64回応用物理学会春季学術講演会  2017.03 

常温で表面活性化接合したSi/GaAs界面の原子・電子構造 Domestic conference

大野裕、吉田秀人、竹田 精治、梁剣波、重川直輝

第64回応用物理学会春季学術講演会  2017.03 

Determination of Band Structure at GaAs/4H-SiC Heterojunctions International conference

Jianbo Liang, Sae Shimizu, Manabu Arai, and Naoteru Shigekawa

Pacific Rim Meeting on Electrochemical and Solid-State Science 2016  2016.10 

Ultra-Thick Metal Contact Fabrication Using Surface Activated Bonding International conference

Pacific Rim Meeing on Electrochemical and Solid-State Science 2016  2016.10 

HAXPES measurements of GaAs thin film/Si junctions-effects of annealing on electrical properties Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

HAXPES measurements of GaAs thin film/Si junctions-band offset analysis Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Coupling properties between III-V/Si sub cells in InGaP/GaAs/Si triple-junction cells Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Impacts of Ar beam irradiation time and recovery by annealing in Si-based Schottky contact Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Surface activated bonding of Si substrates and ITO films Domestic conference

The 77th JSAP Autumn meeting  2016.09 

Plane-view TEM of Si/GaAs interfaces fabricated by surface-activated bonding at RT Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Electrical characteristics of Cu foil/Si junctions by using surface activated bonding Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Electrical Properties of Al-Foil/Wide-Gap-Semiconductor Junctions Fabricated by Surface-Activated Bonding Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Direct bonding of single-crystal diamond and Si substrate Domestic conference

The 77th JSAP Autumn Meeting  2016.09 

Fabrication and characterization of Si/4H-SiC interfaces by surface activated bonding International conference

EMN Surface and Interface Meeting 2016  2016.09 

Effects of Ar beam irradiation on Si-Based Schottky contacts Domestic conference

2016 IEEE International Meeting for Future of Electron Devices  2016.06 

Electrical characteristics of SAB-Based n+-n Ge/4H-SiC heterojunctions Domestic conference

2016 IEEE International Meeting for Future of Electron Devices  2016.06 

Electrical characteristics of Al foil/Si junctions by surface activated bonding method Domestic conference

2016 IEEE International Meeting for Future of Electron Devices  2016.06 

Effects of layered CdTe nano particles on Si solar cells Domestic conference

2016 IEEE International Meeting for Future of Electron Devices  2016.06 

熱処理による4H-SiC/Si HBTの電気特性の改善 Domestic conference

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第63回応用物理学会春季学術講演会  2016.03 

表面活性化ボンディング法によるAl箔/Si接合の電気特性評価 Domestic conference

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第63回応用物理学会春季学術講演会  2016.03 

Si 基板上GaAs/GaN ヘテロ接合の縦方向電気特性評価 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

Room-temperature bonding technologies of dissimilar semiconductor materials applied for high-efficiencies and low-cost devices Domestic conference

-

World Engineering Conference and Convention: Engineering Innovation and Society  2015.11 

GaAs/GaAs接合の電気特性に対するアニール効果 Domestic conference

-

電子情報通信学会電子デバイス研究会  2015.11 

表面活性化ボンディング法に依るSi/SiC接合の電気特性 Domestic conference

-

電子情報通信学会電子デバイス研究会  2015.11 

Electrical Properties of Room Temperature Bonded Si/GaN Heterojunctions without Buffer Layers International conference

-

11th International Conference on Nitride Semiconductors  2015.09 

Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding Domestic conference

-

2015 International Conference on Solid State Devices and Materials  2015.09 

Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy Domestic conference

-

2015 International Conference on Solid State Devices and Materials  2015.09 

Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by Surface Activated Bonding Domestic conference

-

2015 International Conference on Solid State Devices and Materials  2015.09 

多接合太陽電池のボトムセル応用のためのSi逆ピラミッド構造の検討 Domestic conference

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第76回応用物理学会秋季学術講演会  2015.09 

表面活性化接合によるp-Si/n-GaN接合の電気特性評価 Domestic conference

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第76回応用物理学会秋季学術講演会  2015.09 

GaAs/GaAs接合界面の電気特性に対するアニール効果の抽出の試み Domestic conference

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第76回応用物理学会秋季学術講演会  2015.09 

界面顕微光応答法によるSi/SiCヘテロp-n接合の2次元評価 Domestic conference

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第76回応用物理学会秋季学術講演会  2015.09 

常温接合法によるGaAs/4H-SiCヘテロ接合作製及び電気特性評価 Domestic conference

-

第76回応用物理学会秋季学術講演会  2015.09 

Band lineups in GaAs/GaN junctions using surfaceactivated bonding Domestic conference

-

11th Topical Workshop on Heterostructure Microelectronics  2015.08 

Fabrication and characterization of GaAs/4H-SiC junctions by using SAB Domestic conference

-

11th Topical Workshop on Heterostructure Microelectronics  2015.08 

Impacts of annealing in N2/H2 ambient on electrical properties of Si/GaN junctions Domestic conference

-

11th Topical Workshop on Heterostructure Microelectronics  2015.08 

Surface-activated bonding of n+-Si to n-GaN: A possible process for fabricating ohmic contacts to nitrides with smooth surface International conference

-

39th Workshop on Compound Semiconductor Devices and Integrated Circuits  2015.06 

Electrical characterization of GaAs/GaAs bonding interfaces Domestic conference

-

2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

Electrical properties of n+-Si/n-GaN junctions by room temperature bonding Domestic conference

-

2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding Domestic conference

-

2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

Interface characteristics of Si/Si junctions by using surface-activated bonding Domestic conference

-

2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

Impacts of optical properties of anti-reflection coatings on characteristics of InGaP/GaAs/Si hybrid triple-junction cells International conference

-

42nd IEEE International Photovoltaic Specialists Conference  2015.06 

タンデム太陽電池応用のためのSi/InGaP ヘテロ接合の電気伝導特性 Domestic conference

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第62 回応用物理学会春季学術講演会  2015.03 

SAB 法による4H-SiC/Si　HBT構造における少数キャリア注入特性 Domestic conference

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第62 回応用物理学会春季学術講演会  2015.03 

SAB 法によるSi/Si 接合の界面特性の評価 Domestic conference

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第62 回応用物理学会春季学術講演会  2015.03 

表面活性化接合によるn+-Si/n-GaN コンタクトの検討 Domestic conference

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第62 回応用物理学会春季学術講演会  2015.03 

AR 膜によるInGaP/GaAs/Si 3 接合セル中サブセル特性の制御 Domestic conference

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第62 回応用物理学会春季学術講演会  2015.03 

InGaP/GaAs/Si Hybrid Triple-Junction Cells by Surface-Activated Bonding of Invertedly-Grown III-V Heterostructures to Si- Based Bottom Cells Domestic conference

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The 6th World Conference on Photovoltaic Energy Conversion  2014.11 

InGaN/GaN MQW太陽電池におけるMQW構造が短絡電流に与える影響 Domestic conference

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電子情報通信学会電子デバイス研究会  2014.11 

Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells International conference

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2014 ECS and SMEQ Joint International Meeting  2014.10 

異種材料直接接合によるInGaP/GaAs/Siタンデムセル Domestic conference

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第75回応用物理学会秋季学術講演会  2014.09 

SiC 基板上Si 薄膜のウェット酸化と界面構造の安定 Domestic conference

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第75 回応用物理学会秋季学術講演会  2014.09 

III-V系半導体セルとイオン注入Siセルの貼り合わせによるハイブリッド3接合セル Domestic conference

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第11回「次世代の太陽光発電システム」シンポジウム  2014.07 

Effects of annealing on GaAs/Si Bonding Interfaces for Hybrid Tandem Solar Cells Domestic conference

-

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

Annealing temperature dependence of SAB based Si/Si junctions Domestic conference

-

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

Annealing Characteristics of p+-Si/n-4H-SiC junctions by Using Surface Activated Bonding Domestic conference

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions Domestic conference

-

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

Hybrid triple-junction solar cells by surface activate bonding of III-V Double-junction-cell heterostructures to ion-implanation-based Si cells International conference

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40th IEEE Photovoltaic Specialist Conference  2014.06 

Fabrication and Characterization of Si/ 10m Mesa-Etched Si Junctions by Surface Activated Bonding Domestic conference

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2014 IEEE International Meeting for Future of Electron Devices, Kansai  2014.06 

Effects of Annealing on GaAs/Si Bonding Interface for Hybrid Tandem Solar Cells Domestic conference

-

2014 IEEE International Meeting for Future of Electron Devices, Kansai  2014.06 

Improvement in electrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing Domestic conference

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2014 IEEE International Meeting for Future of Electron Devices, Kansai  2014.06 

SAB法によるp+-Si/n-4H-SiC接合のアニール温度依存性 Domestic conference

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第61回応用物理学会春季学術講演会  2014.03 

Si/4H-SiCヘテロ接合界面に対する熱処理の効果 Domestic conference

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第61回応用物理学会春季学術講演会  2014.03 

表面活性化ボンディング法によるSi/Si接合特性における熱処理依存性 Domestic conference

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第61回応用物理学会春季学術講演会  2014.03 

SAB法による深いメサ構造を有するSi/Si接合における寄生容量の低減 Domestic conference

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第61回応用物理学会春季学術講演会  2014.03 

ハイプリッドタンデム太陽電池構造の接合界面に対するアニール効果 Domestic conference

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第61回応用物理学会春季学術講演会  2014.03 

InGaN/GaN MQW 太陽電池におけるMQW構造最適化に関する考察 Domestic conference

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電子情報通信学会技術研究報  2013.11 

表面活性化ボンディング法により形成したSi/SiCヘテロ接合の電気特性 Domestic conference

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電子情報通信学会技術研究報  2013.11 

表面活性化ボンディング法によるタンデム太陽電池の作成 Domestic conference

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電子情報通信学会技術研究報  2013.11 

Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding Domestic conference

3rd International Congress on Natural Science (ICNS 2013)  2013.10 

Electrical Properties of p+-Si /n-SiC Heterojunctions by Using Surface-Activated Bonding Domestic conference

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10th Topical Workshop on Heterostructure Miroelectronics  2013.09 

I-V characteristics in Surface-Activated Bonding (SAB) based Si/SiC junctions at raised ambient temperatures Domestic conference

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International Conference on Silicon Carbide and Related Materials 2013  2013.09 

表面活性化ボンディングによるSi/4H-Sic接合のブレークダウン特性 Domestic conference

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第74回秋季応用物理学会学術講演会  2013.09 

表面活性化ボンディングによるInGaP/Si タンデム太陽電池の作製 Domestic conference

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第74回秋季応用物理学会学術講演会  2013.09 

InGaN/GaN MQW　太陽電池における短絡電流とMQW構造の相関 Domestic conference

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第74回秋季応用物理学会学術講演会  2013.09 

SAB法によるSi/Si接合特性におけるArプラズマ照射効果 Domestic conference

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第74回秋季応用物理学会学術講演会  2013.09 

Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface-Activated Bonding Domestic conference

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39th IEEE Photovoltaic Specialists Conference  2013.06 

Type II band lineup in SAB-Based GaAs/Si Heterojunctions Domestic conference

-

2013 International Meeting for Future of Electron Devices, Kansai  2013.06 

Band Structures of Si/InGaP heterojunctions by Using Surface-Activated Bonding Domestic conference

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Compound Semiconductor Week 2013  2013.05 

Well-number dependence of photovoltaic properties of InGaP/GaN multiple quantum well solar cells Domestic conference

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Compound Semiconductor Week 2013  2013.05 

Growth of high-quality (111) oriented cuprous oxide thin films oxidized in water vapor International conference

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International Conference on Nanoscience and Nanotechnology 2013  2013.03 

表面活性化ボンディングによるメサエッチングSi基板の接合特性評価 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

表面活性化ボンディングによるn-Si/n-4H-Sicヘテロ接合の作製及び評価 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

表面活性化ボンディングによる低抵抗Si/III-V接合 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

表面活性化ボンディングによるSi/GaAsヘテロ接合のバンド構造評価 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

表面活性化ボンディングによるSi/InGaPヘテロ接合のバンド構造評価 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

表面活性化ボンディングによるSi/4H-SiC接合のC-V特性評価 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

InGaN/GaN MQW　太陽電池特性のペア数依存性 Domestic conference

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第60回応用物理学会春季学術講演会  2013.03 

表面活性化ボンディングによるSi • 異種材料接合の電気特性評価 Domestic conference

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電子情報通信学会技術研究報  2012.11 

面活性化ウェハボンディングによるp-Si/n-GaAs貼り合わせ構造の特性評価 Domestic conference

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第73回秋季応用物理学会学術講演会  2012.09 

表面活性化ボンディングによるp-Si/n+-Si貼り合わせ構造の輸送特性評価 Domestic conference

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第73回秋季応用物理学会学術講演会  2012.09 

Si/ダイヤモンド直接接合界面ナノ構造の熱処理による制御

Grant-in-Aid for Scientific Research(B)  2021.03

縦型デバイス応用に向けた導電性ダイヤモンドとGaN、Ga2O3ヘテロ接合の形成

Grant-in-Aid for Scientific Research(C)  2020.04

パワーデバイス応用に向けた酸化ガリウム／IV族半導体直接接合界面形成

Grant-in-Aid for Scientific Research(B)  2019.04

高効率素子に向けたワイドギャップ半導体/ダイヤモンド直接接合及び界面相構造の解明

Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2018.04

シリコン基板上窒化物等異種材料タンデム太陽電池の研究開発

2012.04

電子物理系特別演習（電子材料）

2024   Intensive lecture   Graduate school

電子・物理工学関係外書講読

2024   Intensive lecture   Undergraduate

電子・物理工学概論

2024   Intensive lecture   Undergraduate

電子物理工学概論1

2023   Weekly class   Undergraduate

電子物理系特別演習（電子材料）

2023   Intensive lecture   Graduate school

特別演習（電子材料1）

2023   Weekly class   Graduate school

電子物理系特別研究第1（電子材料）

2023   Intensive lecture   Graduate school

電子物理系特別演習第1（電子材料）

2023   Intensive lecture   Graduate school

電子物理系特別研究（電子材料）

2023   Intensive lecture   Graduate school

卒業研究

2023   Intensive lecture   Undergraduate

電子・物理工学関係外書講読

2023   Intensive lecture   Undergraduate

電子・物理工学概論

2023   Intensive lecture   Undergraduate

半導体材料学特論

2023   Weekly class   Graduate school

特別演習（電子材料2）

2023   Weekly class   Graduate school

電子物理系特別研究第2（電子材料）

2023   Intensive lecture   Graduate school

電子物理系特別演習第2（電子材料）

2023   Intensive lecture   Graduate school

電磁気学演習

2023   Weekly class   Undergraduate

半導体工学Ⅱ

2023   Weekly class   Undergraduate

電子・物理工学実験Ⅱ

2023   Weekly class   Undergraduate

特別演習（電子・物理工学Ⅰ）

2018     Graduate school

特別演習（パワーエレクトロニクス工学II）

2018     Undergraduate

特別演習（パワーエレクトロニクス工学Ⅰ）

2018     Graduate school

卒業研究

2018     Undergraduate

電子・物理工学実験Ⅱ

2018     Undergraduate

電子・物理工学関係外書講読

2018     Undergraduate

電磁気学Ⅰ演習

2018     Undergraduate

電磁気学Ⅰ演習

2017     Undergraduate

電子・物理工学実験Ⅱ

2017     Undergraduate

卒業研究

2017     Undergraduate

電子・物理工学関係外書購読

2017     Undergraduate

特別演習（パワーエレクトロニクス工学Ⅰ）

2017     Graduate school

特別演習（パワーエレクトロニクス工学Ⅱ）

2017     Graduate school

卒業研究

2016     Undergraduate

電子・物理工学関係外書購読

2016     Undergraduate

特別演習（パワーエレクトロニクス工学Ⅰ）

2016     Graduate school

特別演習（パワーエレクトロニクス工学Ⅱ）

2016     Graduate school

電子・物理工学実験Ⅰ

2016     Undergraduate

電磁気学Ⅰ演習

2016     Undergraduate

電子・物理工学関係外書購読

2015     Undergraduate

卒業研究

2015     Undergraduate

特別演習（パワーエレクトロニクス工学Ⅰ）

2015     Graduate school

特別演習（パワーエレクトロニクス工学Ⅱ）

2015     Graduate school

前期特性研究

2015     Graduate school

電磁気学Ⅰ演習

2015     Undergraduate

電子・物理工学実験Ⅰ

2015     Undergraduate