Updated on 2024/01/28

写真a

 
LIANG JIANBO
 
Organization
Graduate School of Engineering Division of Physics and Electronics Associate Professor
School of Engineering Department of Physics and Electronics
Title
Associate Professor
Affiliation
Institute of Engineering

Position

  • Graduate School of Engineering Division of Physics and Electronics 

    Associate Professor  2022.04 - Now

  • School of Engineering Department of Physics and Electronics 

    Associate Professor  2022.04 - Now

Degree

  • 博士(工学) ( Nagoya Institute of Technology )

  • 修士(工学) ( Nagoya Institute of Technology )

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

Research Career

  • SiC/ダイヤモンド直接接合による大口径・高熱伝導率GaN-on-ダイヤモンド基板の研究開発

    Joint Research in Japan

    2020.04 - Now 

  • パワー素子の放熱性向上に向けたGa2O3とSiC接合界面の形成

    Joint Research in Japan

    2020.04 - Now 

  • 高出力・高周波素子に向けたダイヤモンドと窒化物半導体の直接接合研究

    Joint Research in Japan

    2018.04 - Now 

  • シリコン基板上窒化物等異種材料タンデム太陽電池の研究開発

    タンデム太陽電池、シリコンセル、化合物太陽電池  Joint Research in Japan

    2013.04 - 2016.03 

Committee Memberships (off-campus)

  • 委員   Function Diamond編集委員会 編集委員  

    2020.12 - Now 

Awards

  • 実装フェスタ関西2022 インパクトポスター賞

    梁剣波

    2022.11   エレクトロニクス実装学会   パワーデバイス応用に向けたダイヤモンドと異種材料の直接接合技術の研究開発

     More details

    Country:Japan

  • Best Presentation Award

    Jianbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    2021.10   The organizing committee of 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Fabrication of Ga2O3/Si direct bonding interface for high power device applications

     More details

    Country:Japan

    The fabrication of Ga2O3(010)/Si(100) and Ga2O3(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga2O3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).

  • Best Student Presentation Award

    Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    2021.10   The organizing committee of 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device

     More details

    Country:Japan

    The self-heating of GaN-HEMTs is a serious issue in terms of the device performance and reliability. Therefore, diamond is the most promising candidate as a heat spreader material for HEMTs application because of its extremely high thermal conductivity. Therefore, we fabricate GaN-HEMTs on diamond substrate by using surface activated bonding method.

  • 大阪市立大学2019年度南部陽一郎記念若手奨励賞

    梁 剣波

    2019.10   大阪市立大学  

  • Best Poster Presentation Award

    Shinji Kanda, Satoshi Masuya, Makoto Kasu, Naoteru Shigekawa, Jianbo Liang

    2019.05   The organizing committee of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Fabrication of Diamond/Cu Direct Bonding for Power Device Application

     More details

    Country:Japan

  • Best Presentation Award

    Yutaka Ohno, Reina Miyagawa, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

    2019.05   The organizing committee of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature

     More details

    Country:Japan

▼display all

Job Career (off-campus)

  • ブリストル大学   HH Wills 物理学研究所   客員研究員

    2017.02 - 2017.08

Education

  • Nagoya Institute of Technology   Doctor's Course   Graduated/Completed

    2009.04 - 2012.03

  • Nagoya Institute of Technology   Master's Course   Graduated/Completed

    2007.04 - 2009.03

Papers

  • Probe beam deflection technique with liquid immersion for fast mapping of thermal conductance Reviewed International coauthorship

    Jinchi Sun, Zhe Cheng, Jianbo Liang, Naoteru Shigekawa, Keisuke Kawamura, Hiroki Uratani, Yoshiki Sakaida, David G. Cahill

    Applied Physics Letter   124 ( 042201 )   042201-1 - 042201-7   2024.01

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1063/5.0179581

  • High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes Reviewed International coauthorship

    Ryo Kagawa, Zhe Cheng, Keisuke Kawamura, Yutaka Ohno, Chiharu Moriyama, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Koji Inoue, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    Small   ( 2305574 )   2305574-1 - 2305574-14   2023.11

     More details

    Authorship:Last author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1002/smll.202305574

  • Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers Reviewed

    Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   62 ( SN1013 )   SN1013-1 - SN1013-7   2023.09

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/acf382

  • Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding Reviewed

    Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, Masataka Higashiwaki

    Journal of Applied Physics   133 ( 194503 )   194503-1 - 194503-7   2023.04

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1063/5.0128554

  • Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol-gel glass films Reviewed

    Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, YongGu Shim, and Naoteru Shigekaw

    Japanese Journal of Applied Physics   62 ( SK1005 )   SK1005-1 - SK1005-7   2023.03

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/acc03e

  • Tuning the Interlayer Microstructure and Residual Stress of Buffer-Free Direct Bonding GaN/Si Heterostructures Reviewed International coauthorship

    Yan Zhou, Shi Zhou, Shun Wan, Bo Zou, Yuxia Feng, Rui Mei, Heng Wu, Naoteru Shigekawa, Jianbo Liang, Pingheng Tan, and Martin Kuball

    Applied Physics Letter   122 ( 082103 )   2023.02

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

  • Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding Reviewed International coauthorship

    Shi Zhou, Shun Wan, Bo Zou, Yanping Yang, Huarui Sun, Yan Zhou, and Jianbo Liang

    Crystals   13 ( 217 )   1 - 11   2023.01

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: doi.org/10.3390/cryst13020217

  • Room-temperature bonding of GaN and diamond via a SiC layer Invited Reviewed

    Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    Functional diamond   2 ( 142 )   142 - 150   2022.12

     More details

    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

  • High Thermal conductivity in wafer-scale cubic silicon carbide crystals Reviewed International coauthorship

    Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hao Zhou, Hidetoshi Asamura, Hiroki Uratani, Janak Tiwari, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Tianli Feng, Naoteru Shigekawa, and David G. Cahill

    Nature Communications   13   7201   2022.11( ISSN:2041-1723

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1038/s41467-022-34943-w

  • Heterojunctions fabricated by surface activated bonding-dependence of their nanostructural and electrical characteristics on thermal process Invited Reviewed

    Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

    Japanese Journal of Applied Physics   61 ( 12 )   120101   2022.10

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac993f

  • Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding Reviewed

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa

    Diamond & Related Materials   130   109425   2022.10

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1016/j.diamond.2022.109425

  • 常温におけるダイヤモンドと異種材料の直接接合 Invited Reviewed

    梁剣波,大野裕,重川直輝

    日本金属学会会報   61 ( 6 )   334 - 339   2022.06

     More details

    Authorship:Lead author   Publishing type:Research paper (scientific journal)   International / domestic magazine:Domestic journal  

  • Quantitative capacitance measurements in frequency modulation electronic force microscopy Reviewed

    Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa, Takuji Tahahashi

    Japanese Journal of Applied Physics   61   SL1005-1 - SL1005-7   2022.05

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac5fb9

  • Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes Reviewed

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   61   SF1009-1 - SF1009-9   2022.04

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac6480

  • Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates Reviewed

    Yonekura Kenya, Kawamoto Tasuku, Liang Jianbo, Eiji Shikoh, Koichi Maezawa, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   61   SF1008-1 - SF1008-4   2022.04

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac629a

  • Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding Invited Reviewed

    Ohno Yutaka, Jianbo Liang, Yoshida Hideto, Shimizu Yasuo, Nagai Yasuyoshi, and Shigekawa Naoteru

    Japanese Journal of Applied Physics   61   SF1006-1 - SF1006-5   2022.04

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac5d11

  • Intrinsic luminescence-downshifting effects of Zn-based Mn-doped nanoparticle layers on Si Solar Cells Reviewed

    Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, Kim DaeGwi, Yong-Gu Shim, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   61   062004-1 - 062004-6   2022.03

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac5fc8

  • AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process Reviewed

    Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

    Applied Physics Express   15   041003-1 - 041003-5   2022.03

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 μm heterostructures grown on 3CSiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is
    observed during 800 °C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35%
    of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the
    bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.

    DOI: 10.35848/1882-0786/ac5ba7

  • Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications Reviewed

    Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   61   SF1001-1 - SF1001-8   2022.03

     More details

    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac4c6c

  • Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties Reviewed

    Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Tahahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki

    AIP Journal of Applied Physics   13   074501-1 - 074501-9   2022.02

     More details

    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1063/5.0080734

  • Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties Reviewed International coauthorship

    Yota Uehigashi , Shinya Ohmagari , Hitoshi Umezawa , Hideaki Yamada , Jianbo Liang , Naoteru Shigekawa

    Diamond & Related Materials   120   108665-1 - 108665-6   2021.10

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design Reviewed International coauthorship

    Jianbo Liang, Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Seong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, and Naoteru Shigekawa

    Advanced Materials   33 ( 21045 )   2104564-1 - 2104564-13   2021.09

     More details

    Authorship:Lead author, Last author, Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

  • Room temperature direct bonding of diamond and InGaP in atmospheric air Reviewed

    Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Hongxing Wang, Naoteru Shigekawa

    Functional Diamond   1 ( 1 )   110 - 116   2021.02

     More details

    Publishing type:Research paper (scientific journal)  

  • Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications Reviewed

    Jianbo Liang, Yuji Nakamura, Tianzhuo Zhan, Yutaka Ohno, Yasuo Shimizu, Kazu Katayama, Takanobu Watanabe, Hideto Yoshida, Yasuyoshi Nagai, Hongxing Wang, Makoto Kasu, Naoteru Shigekawa

    Diamond and Related Materials   111   108207   2020.11

     More details

    Publishing type:Research paper (scientific journal)  

  • III-V Thin Film Solar Cells Bonded to Si substrate via Metal Grids Reviewed International coauthorship

    Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa

    ECS Transaction   98 ( 4 )   117 - 123   2020.10

     More details

    Publishing type:Research paper (international conference proceedings)   Kind of work:Joint Work  

  • Nanostructural Investigation on GaAs//Indium Tin Oxide /Si Junctions for III-V-on-Si Hybrid Multijunction Cells Reviewed

    Tomoya Hara, Jianbo Liang, Kenji Araki, Takefumi Kamioka, Kentaro Watanabe, Masakazu Sugiyama, Naoteru Shigekawa

    ECS Transaction   98 ( 4 )   125 - 133   2020.10

     More details

    Publishing type:Research paper (scientific journal)  

  • Low-Temperature Direct Bonding Technologies of Semiconductor Substrates Invited Reviewed

    Naoteru Shigekawa, Jianbo Liang

    The IEICE Transaction on Electronics   J103-C ( 7 )   341 - 348   2020.07

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces Reviewed

    Yutaka Ohnoa, Jianbo Liangb, Naoteru Shigekawab, Hideto Yoshidac, Seiji Takedac, Reina Miyagawad, Yasuo Shimizue, Yasuyoshi Nagai

    Applied Surface Science   525   146610   2020.05

     More details

    Publishing type:Research paper (scientific journal)  

  • Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells Reviewed International coauthorship

    Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang, and Akira Yasui

    Solar Energy Materials and Solar Cells   210   110501   2020.03

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Characterization of nanoscopic Cu/diamond interfaces prepared by surface activated bonding: Implications for thermal management Reviewed

    J. Liang, Y. Ohno, Y. Yamashita, Y. Shimizu, S. Kanda, N. Kamiuchi, S.-W. Kim, K. Koyama, Y. Nagai, M. Kasu, N. Shigekawa

    ACS Applied Nano Materials   3 ( 3 )   2455 - 2462   2020.03

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsanm.9b02558

  • Fabrication of diamond/Cu direct bonding for power device applications Reviewed

    S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, J. Liang

    Japanese Journal of Applied Physics   59 ( SB )   SBBB03/1 - SBBB03/5   2020.02

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab4f19

  • Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding Reviewed

    Yutaka Ohno, Hideto Yoshida, Naoto Kamiuchi, Ryotaro Aso, Seiji Takeda, Yasuo Shimizu, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa

    Japanese Journal of Applied Physics   59   SBBB05-1 - SBBB05-5   2020.02

     More details

    Publishing type:Research paper (scientific journal)  

  • Low-resistance semiconductor/semiconductor junctions with intermediate metal grids for III-V-on-Si multijunction solar cells Reviewed International coauthorship

    Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   59 ( SB )   SBBB04   2019.11

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies Reviewed International coauthorship

    1. Keita Matsuura, Jianbo Liang, Koichi Maezawa, and Naoteru Shigekawa

    IEEE Transactions on Electron Devices   66 ( 9 )   3946 - 3952   2019.07

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Macroscale synthesis of CuO nanowires on FTO plane substrate Reviewed International coauthorship

    1. Yota Mabuchi, Rashid Norhana Mohamed, Xuyang Li, Jianbo Liang, Naoki Kishi, and Tetsuo Soga

    Modern Physics Letters B   33   1950138   2019.04

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

  • Annealing effect of surface-activated bonded diamond/Si interface Reviewed

    Jianbo Liang, Yan Zhou, Satoshi Masuya, Filip Gucmann, Manikant Singh, James Pomeroy, Seongwoo Kim, Martin Kuball, Makoto Kasu, Naoteru Shigekawa

    Diamond & Related Materials   93   187 - 192   2019.02

     More details

    Publishing type:Research paper (scientific journal)  

  • Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding Reviewed International coauthorship

    Shoji Yamajo, Sanji Yoon, Jianbo Liang, Hassanet Sodabanlu, Kentaro Watanabe, Masakazu Sugiyama, Akira Yasui, Eiji Ikenaga, and Naoteru Shigekawa

    Applied Surface Science   473   627 - 632   2018.12

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

  • Stability of diamond/Si bonding interface during device fabrication process Reviewed International coauthorship

    Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, and Naoteru Shigekawa

    Applied Physics Express   12   016501-1 - 016501-5   2018.11

     More details

    Authorship:Lead author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Reviewed

    Sho Morita, Jianbo Liang, Naoteru Shigekawa

    ECS Transactions   86 ( 5 )   137 - 142   2018.10

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Single Work   International / domestic magazine:International journal  

    DOI: 10.1149/08605.0137ecst

  • Room-temperature direct bonding of diamond and Al Reviewed International coauthorship

    Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

    Scripta Materialia   159   58 - 61   2018.09

     More details

    Authorship:Lead author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electrical properties of GaAs//indium tin oxide /Si junctions for III-V-on-Si hybrid multijunction cells Reviewed International coauthorship

    Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   57 ( 8S3 )   08RD05-1 - 08RD05-6   2018.07

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • GaAs/indium tin oxide/Si bonding junctions for III-V-on-Si hybrid multijunction cells with low series resistance Reviewed International coauthorship

    Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takefumi Kamioka, Kenji Araki, and Masafumi Yamaguchi

    IEEE Journal of Photovoltaics   pp ( 99 )   1 - 8   2018.03

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding Reviewed

    Morita Sho, Liang Jianbo, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

    Japanese Journal of Applied Physics   57 ( 2 )   2018.02( ISSN:0021-4922

     More details

    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.7567/JJAP.57.02BE01

  • Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces Reviewed International coauthorship

    Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai

    Japanese Journal of Applied Physics   57 ( 2S1 )   02BE04-1 - 02BE04-5   2018.01

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding Reviewed International coauthorship

    Jianbo Liang, Tomoki Ogawa, Tomoya Hara, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   57 ( 2S1 )   02BE03-1 - 02BE03-5   2018.01

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions Reviewed International coauthorship

    Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   57 ( 2S1 )   02BE02-1 - 02BE02-5   2017.12

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding Reviewed International coauthorship

    Sho Morita, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   57 ( 2S1 )   02BE01-1 - 02BE01-5   2017.11

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature Reviewed International coauthorship

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   57 ( 2S1 )   02BA01-1 - 02BA01-3   2017.11

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices Reviewed International coauthorship

    Jianbo Liang, Katsuya Furuna, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, and Naoteru Shigekawa

    ECS Journal of Solid State Science and Technology   6 ( 9 )   P626 - P632   2017.08

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Realization of direct bonding of single crystal diamond and Si substrates Reviewed International coauthorship

    Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa

    Applied Physics Letters   110 ( 11 )   111603-1 - 111603-4   2017.03

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Determination of Band Structure at GaAs/SiC Heterojunctions International coauthorship

    Jianbo Liang, Sae Shimizu, Manabu Arai, and Naoteru Shigekawa

    Electrochemical Society Transaction   75 ( 9 )   221 - 227   2016.10

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Ultra-Thick Metal Contact Fabrication Using Surface Activated Bonding International coauthorship

    Jianbo Liang, Katuya Huruna, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

    Electrochemical Society Transaction   75 ( 9 )   25 - 32   2016.10

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment Reviewed International coauthorship

    Jianbo Liang, Shota Nishida, Manabu Arai, and Naoteru Shigekawa

    Journal of Applied Physics   120 ( 3 )   034504-1 - 034504-7   2016.06

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding Reviewed International coauthorship

    Li Chai, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   55 ( 6 )   068002-1 - 068002-3   2016.05

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Mapping of Si/SiC hetero p-n Junctions Using ScanningInternal Photoemission Microscopy Reviewed International coauthorship

    Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji Shiojima

    Japanese Journal of Applied Physics   55 ( 3 )   04ER15-1 - 04ER15-4   2016.03

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Current-voltage and spectral-response characteristics of surface-activated-bonding based InGaP/GaAs/Si hybrid triple-junction cells

    Naoteru Shigekawa, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto

    Japanese Journal of Applied Physics   54   08KE03   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Investigation on the Interface Resistance of Si/GaAs Heterojunctions by Using Surface-Activated Bonding

    Jianbo Liang, Li Chai, Shota Nishida, Masashi Morimoto, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   54   030211   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si

    Shota Nishida, Jianbo Liang, Tomohiro Hayashi, Naoteru Shigekawa, and Manabu Arai

    Japanese Journal of Applied Physics   54   030210   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Single phase CuO thin films prepared by thermal oxidation in air with water vapor

    Jianbo Liang, XuYang Li, Naoki Kishi, and Tetsuo Soga

    Advanced Materials Research   1109   544 - 548   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Impacts of annealing on electrical properties of Si/Si junctions by surface activated bonding

    Masashi Morimoto, Jianbo Liang, Shota Nishida, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   54   030212   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • 4H-SiC/Si Heterojunction Bipolar Transistor Fabricated by Surface Activated Bonding

    Jianbo Liang, Sae Shimizu, Shota Nishida, Naoteru Shigekawa, and Manabu Arai

    ECS Solid State Letters   4   Q55   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Interface Characteristics of Si/Si Junctions by Using Surface-Activated Bonding

    Syoji Yamajo, Masashi Morimoto, Jianbo Liang, and Naoteru Shigekawa

    2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)   62 - 63   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Fabrication and Characterization of Si-Based Bipolar Transistor Structures Using Low-Temperature Bonding

    Sae Shimizu, Shota Nishida, Jianbo Liang, Manabu Arai, and Naoteru Shigekawa

    2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)   64 - 65   2015

     More details

    Publishing type:Research paper (scientific journal)  

  • Effects of Interface State Charges on the Electrical Properties of Si/SiC Heterojunctions

    J. Liang, S. Nishida, T. Hayashi, M. Arai, and N. Shigekawa

    Applied Physics Letters   105   151607   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Growth of high-quality (111) oriented cuprous oxide thin films oxidized in water vapor

    Jianbo Liang, XuYang Li, Naoki Kishi, and Tetsuo Soga

    Advanced Materials Research   832   138 - 142   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Surface-activated-bonding-based InGaP-on-Si double-junction cells

    Naoteru Shigekawa, Masashi Morimoto, Shota Nishida, and Jianbo Liang

    Japanese Journal of Applied Physics   53   04ER05   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • I-V characteristics in surface-activated Bonding based Si/SiC junctions at raised ambient temperatures

    Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa, and Manabu Arai

    Materials Science Forum   778-780   718 - 721   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding

    Naoteru Shigekawa, Jianbo Liang, Noriyuki Watanabe, and Akio Yamamoto

    Physica status solidi C   11   644 - 647   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Effect of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

    J. Liang, S. Nishida, M. Arai, and N. Shigekawa

    Applied Physics Letters   104   161604   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

    Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   53   112301   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Hybrid triple-junction solar cells by surface activated bonding of III-V double-junction-cell heterostructures to ion-implantation-based Si cells

    Naoteru Shigekawa, Li Chai, Masashi Morimoto, Jianbo Liang, et al.

    40th IEEE Photovoltaic Specialists Conference   0534   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells

    Naoteru Shigekawa, Jianbo Liang, Masashi Morimoto, and Shota Nishida

    Electrochemical Society Transaction   64 ( 5 )   235 - 242   2014

     More details

    Publishing type:Research paper (scientific journal)  

  • Electrical properties of Si/Si interfaces by using surface-activated bonding

    J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, and N. Shigekawa

    Journal of Applied Physics   114   183703   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface-Activated Bonding

    Naoteru Shigekawa, Jianbo Liang, and Noriyuki Watanabe

    IEEE Photovoltaic Specialists Conference   Proc. 39th   2470 - 2473   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Graphene synthesis by thermal chemical vapor deposition using solid precursor

    Mohsin Ahmed, Naoki Kishi, Ryo Sugita, Akiji Fukaya, Ishwor Khatri, Jianbo Liang, Sharif Mohammad Mominuzzaman

    Journal Material Science: Material Electron   24   2151   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

    Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, and Naoteru Shigekawa

    Applied Physics Express   6   021801   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Surface-activating-bonding-based low resistance Si/III-V junctions

    J. Liang, S. Nishida, M. Morimoto, and N. Shigekawa

    Electronics Letters   49   830   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Synthesis of cupric oxide nanowires on spherical surface by thermal oxidation method

    Xuyang Li, Jianbo Liang, Naoki Kishi, and Tetsuo Soga

    Materials Letters   96   192 - 194   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Band structures of Si/InGaP heterojunctions by using surface activated bonding

    Jianbo Liang, Masashi Morimoto, Shota Nishida, and Naoteru Shigekawa

    Physics Status Solidi C   10   1644 - 1647   2013

     More details

    Publishing type:Research paper (scientific journal)  

  • Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor

    JianBo Liang, Naoki Kishi, Tetsuo Soga, and Takashi Jimbo

    Thin solid films   520   2679 - 2682   2012

     More details

    Publishing type:Research paper (scientific journal)  

  • Synthesis of highly-aligned cupric oxide nanowiers by thermal oxidation of copper foils

    JianBo Liang, Naoki Kishi, Tetsuo Soga, and Takashi Jimbo

    Journal of Nanomaterials   Article ID 268508   8 pages   2011

     More details

    Publishing type:Research paper (scientific journal)  

  • Cross-sectional characterization of Cupric Oxide Nanowires grown by Thermal Oxidation of Copper Foils

    JianBo Liang, Naoki Kishi, Tetsuo Soga, and Takashi Jimbo

    Applied Surface Science   257   62 - 66   2010

     More details

    Publishing type:Research paper (scientific journal)  

▼display all

Books and Other Publications

  • ラマン分光スペクトルデータ解析事例集 Reviewed

    梁 剣波( Role: Joint author ,  第7章3節)

    技術情報協会  2022.02 

     More details

    Total pages:405   Responsible for pages:205-211   Book type:Textbook, survey, introduction Participation form:Corresponding Author

MISC

  • ダイヤモンド/異種材料直接接合によるパワーデバイスの作製と特性評価 Invited Reviewed International journal

    New Diamond   151 ( 39 )   4 - 9   2023.10

     More details

    Authorship:Lead author   Publishing type:Article, review, commentary, editorial, etc. (other)   International / domestic magazine:Domestic journal  

  • 半導体材料3C-SiCが高い熱伝導率を示すことを初めて実証 Invited International journal

    梁 剣波

    日本セラミック協会   58 ( 3 )   175   2023.03

     More details

    Authorship:Lead author, Corresponding author   Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • 表面活性化接合によるX on diamond 構造 Invited Reviewed International journal

    重川 直輝、梁 剣波、大野 裕

    GS Yuasa Technical Report   19 ( 2 )   1 - 9   2022.12

     More details

    Authorship:Corresponding author   Publishing type:Book review, literature introduction, etc.   International / domestic magazine:Domestic journal  

  • ダイヤモンドと異種材料との直接接合による超耐熱マテリアルの開発とその応用について Invited

    梁剣波、重川直輝

    技術情報協会   21 ( 8 )   2022.01

     More details

    Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Kind of work:Joint Work  

  • 表面活性化接合法による厚膜・低損失配線の実現 Invited

    重川直輝, 梁剣波, 前澤宏一

    ケミカルエンジニアリング   65 ( 11 )   686 - 693   2020.11

     More details

    Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Kind of work:Joint Work  

  • 高効率パワー素子の実現に向けたダイヤモンドと異種材料の直接接合技術の開発 Invited

    梁 剣波, 重川 直輝

    化学工業社・ケミカルエンジニアリング   65 ( 8 )   469 - 474   2020.08

     More details

    Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)  

  • ダイヤモンドと異種材料の直接接合による高効率デバイスの実現 Invited

    梁剣波, 重川直輝

    日本出版制作センター・月刊 JETI   68 ( 6月 )   37 - 40   2020.05

     More details

    Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Kind of work:Joint Work  

  • Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature Reviewed

    Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa

    Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration   2 - 2   2019.06

     More details

    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • 次世代エレクトロニクスを拓くダイヤモンドと異種材料の直接接合 Reviewed

    重川直輝 梁剣波

    ニューダイヤモンドフォーラム   34 ( 4 )   3 - 5   2018.10

     More details

    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Single Work  

  • Electrical characteristics of Si/SiC junctions using surface activated bonding International journal

    Tomohiro Hayashi, Jianbo Liang, Manabu Arai, and Noateru Shigekawa

    IEICE Technical Report   115 ( 39 )   111 - 15   2015.11

     More details

    Authorship:Corresponding author   Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • Effects of annealing on the electrical characteristics of GaAs/GaAs junctions International journal

    Li Chai, Jianbo Liang, and Naoteru Shigekawa

    IEICE Technical Report   115 ( 329 )   105 - 109   2015.11

     More details

    Authorship:Corresponding author   Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding International journal

    LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

    IEICE Technical Report   113 ( 329 )   27 - 30   2013.11

     More details

    Authorship:Corresponding author   Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • Investigation on the optimum MQW structure for InGaN/GaN solar cells International journal

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    IEICE Technical Report   113 ( 329 )   31 - 34   2013.11

     More details

    Authorship:Corresponding author   Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding International journal

    Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

    IEICE Technical Report   113 ( 329 )   21 - 25   2013.11

     More details

    Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • Electrical Properties of Si-Based Heterojunctions by Surface-Activated International journal

    LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

    IEICE Technical Report   112 ( 328 )   1 - 5   2012.11

     More details

    Authorship:Lead author, Corresponding author   Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

▼display all

Presentations

  • Enhanced Thermal Performance in GaN/3C-SiC/Diamond Junctions for Practical Device Applications International conference

    Jianbo Liang and Shigekawa Naoteru

    The 9th International Forum on Wide Bandgap Semiconductors & The 20th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2023)  2023.11  The 9th International Forum on Wide Bandgap Semiconductors & The 20th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2023)

     More details

    Presentation type:Oral presentation (invited, special)  

    Venue:Xiamen, China  

  • Low-Temperature Direct Bonding of Diamond—Approach for Fabricating Low-Thermal-Resistance Widegap Devices Invited

    Naoteru Shigekawa, Ryo Kagawa, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno and Yasuyoshi Nagai

    2023 MRS Fall Meeting  2023.11  Materials Research Society

     More details

    Presentation type:Oral presentation (invited, special)  

    Venue:Boston, USA  

  • Fabrication of nitride/3C-SiC/polycrystalline diamond heterostructures for efficient thermal management of power devices International conference

    Chiharu Moriyama, Keisuke Kawamura, Sumito Ouchi, Hiroki Uratani, Yutaka Ohno, Koji Inoue, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    14th International Conference on Nitride Semiconductors (ICNS 14)  2023.11  14th International Conference on Nitride Semiconductors (ICNS 14)

     More details

    Presentation type:Oral presentation (general)  

    Venue:Fukuoka, Japan  

  • Thermal Transport in Cubic Silicon Carbide Crystals and Cross Integrated Interfaces International coauthorship International conference

    Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Tianli Feng, Hidetoshi Asamura, Hiroki Uratani, Samuel Graham, David Cahill

    International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterpACK 2023)  2023.10  International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterpACK 2023)

     More details

    Presentation type:Oral presentation (general)  

    Venue:DoubleTree by Hilton Hotel San Diego – Mission Valley  

  • Integrating GaN with diamond for power devices with efficient thermal management International conference

    Jianbo Liang, Yutaka Ohno, and Naoteru Shigekawa

    International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT 2023)  2023.10  IEEE-EPS-Taipei, iMAPS-Taiwan, ITRI, and TPCA

     More details

    Presentation type:Oral presentation (invited, special)  

    Venue:Taipei Nangang Exhibition Center  

  • Fabrication and Electrical Characterization of GaAs/GaN Junctions International conference

    Shota Ishimi, Makoto Hirose, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

    244th ECS Meeting  2023.10  The Electrochemical Society

     More details

    Presentation type:Oral presentation (general)  

    Venue:Gothenburg, Sweden  

  • 高放熱パワーデバイス応用に向けたGaN/3C-SiC on-polycrystalline diamond HEMTs構造の作製 Domestic conference

    森山 千春、川村 啓介、大内 澄人、浦谷 泰基、大野 裕、井上 耕治、永井 康介、重川 直輝、梁 剣波

    2023年第84回応用物理学会秋季学術講演会  2023.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:熊本城ホール  

  • 表面活性化接合法で作製したGaN/GaN界面近傍のケルビン・プローブ・フォース顕微鏡による断面計測 Domestic conference

    文 思翰、澤井 一樹、梁 剣波、重川 直輝、高橋 琢二

    2023年第84回応用物理学会秋季学術講演会  2023.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:熊本城ホール  

  • Integration of 3C-SiC and polycrystalline diamond for large-scale high-performance GaN device production International conference

    Jianbo Liang, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    33rd International Conference on Diamond and Carbon Materials (ICDCM 2023)  2023.09  Elsevier

     More details

    Presentation type:Oral presentation (general)  

    Venue:Mallorca, Spain  

  • Integration of Si and polycrystalline diamond by a surface-activated bonding method International conference

    Jianbo Liang, Yoshiki Nishibayashi, Minori Teramoto, Marika Takeuchi, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    33rd International Conference on Diamond and Carbon Materials (ICDCM 2023)  2023.09  Elsevier

     More details

    Presentation type:Poster presentation  

    Venue:Mallorca, Spain  

  • GaN HEMT on-diamond構造の作製及び特性評価 Domestic conference

    早川 譲稀 , 大野 裕 , 永井 康介 , 重川 直輝 , 梁 剣波

    第70回応用物理学会春季学術講演会  2023.03  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス  

  • α-Ga2O3/4H-SiC直接接合の作製と界面構造の評価 Domestic conference

    山本 誠志郎 , 大島 祐一 , 大野 裕 , 永井 康 介 , 重川 直輝 , 梁 剣波

    第70回応用物理学会春季学術講演会  2023.03  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス  

  • High Performance GaN-on-Diamond Devices Fabrication using Diamond Wafer Bonding Technology Invited International conference

    Jianbo Liang, Yutaka Ohno, Naoteru Shigekawa

    Hasselt Diamond Workshop 2023  2023.03 

     More details

    Presentation type:Oral presentation (invited, special)  

    Venue:Hasselt, Belgium  

  • 転位発生源となるシリコン非対称傾角粒界の形成過程 Domestic conference

    大野 裕 , 斉藤 光 , 梁 剣波 , 横井 達矢 , 松永 克 志 , 重川 直輝 , 井上 耕治 , 永井 康介 , 波多 聰

    第70回応用物理学会春季学術講演会  2023.03  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス  

  • Characterization of GaN/ GaN Interfaces Fabricated by Surface-Activated Bonding International conference

    Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai and Naoteru Shigekawa

    15th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanometerials 16th International Conference on Plasma-Nano Technology & Science  2023.03 

     More details

    Presentation type:Oral presentation (general)  

    Venue:Gigu University, Gifu, Japan  

  • Direct Wafer Bonding of Nitride and its Application for Advanced Devices Invited International conference

    Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

    15th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanometerials 16th International Conference on Plasma-Nano Technology & Science  2023.03 

     More details

    Presentation type:Oral presentation (invited, special)  

    Venue:Gigu University, Gifu, Japan  

  • AlGaN/GaN/3C-SiC-on-diamond high electron mobility transistors (HEMTs) fabrication by diamond room temperature bonding Invited International conference

    Jianbo Liang

    Symposium for Functional Diamond, International Diamond Conference  2022.11 

     More details

    Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  • 表面活性化接合法によるGaN/GaN接合界面の評価 Domestic conference

    澤井 一樹、梁 剣波、清水 康雄、大野 裕、永井 康介、重川 直輝

    第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:東北大学 川北北キャンパス  

  • n+-Si/p-ダイヤモンドヘテロ接合ダイオードの耐熱性評価 Domestic conference

    上東 洋太、大曲 新矢、梅沢 仁、山田 英明、梁 剣波、重川 直輝1

    第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:東北大学 川北北キャンパス  

  • 高出力デバイス応用に向けたGaN/3C-SiC on-diamond HEMT構造の作製 Domestic conference

    香川 諒、重川 直輝、梁 剣波、川村 啓介、坂井田 佳紀、大内 澄人、浦谷 泰基、清水 康夫、大野 裕、長井 康介

    第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:東北大学 川北北キャンパス  

  • 表面活性化接合法で作製したn-Si/n-Siおよびp-Si/p-Si接合の二重バイアス変調静電引力顕微鏡による評価 Domestic conference

    小林 大地、梁 剣波、重川 直輝、高橋 琢二

    第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:東北大学 川北北キャンパス  

  • Si太陽電池に対する高光学密度半導体ナノ粒子膜の堆積効果 Domestic conference

    粟井 啓伍、井筒 由紀、梁 剣波、西村 悠陽、金 大貴、沈 用球、重川 直輝

    第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:東北大学 川北北キャンパス  

  • パワー素子の放熱向上に向けたGa2O3/3C-SiC直接接合の特性評価 Domestic conference

    長井 啓、川村 啓介、浦谷 泰基、坂井田 佳紀、重川 直輝、梁 剣波

    第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

     More details

    Presentation type:Oral presentation (general)  

    Venue:東北大学 川北北キャンパス  

  • Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding International conference

    Zexin Wan, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Fabrication of GaN/SiC/diamond Structure for Efficient Thermal Management of Power Device International conference

    Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Coplanar Waveguides Fabricated by Directly Bonding Metal Foils to High-Resistivity Si Substrates International conference

    Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, and Naoteru Shigekawa

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Polarization Inverted GaN/GaN Junctions Fabricated by Surface-Activated Bonding International conference

    Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • High Temperature Stability of p+-Si/p-Diamond Heterojunction diodes International conference

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Fabrication of Ga2O3/3C-SiC Direct Bonding for Efficient Surface Heat Dissipation International conference

    Hiromu Nagai, Keisuke Kawamura, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Fabrication and Characterization of GaN/Diamond Boding Interface International conference

    Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Swong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Fabrication of Ga2O3/Si Direct Bonding Interface for High Power Device Applications International conference

    JIanbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Structural Analysis of Diamond/Silicon Heterointerfaces Fabricated by Surface Activated Bonding at Room Temperature International conference

    Yutaka Ohno, Jianbo Liang, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai, and Naoteru Shigekawa

    2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2021.10 

     More details

    Presentation type:Oral presentation (general)  

  • Ga2O3/Siヘテロ構造の作製及び構造評価 Domestic conference

    髙月 大輝, 東脇 正高、清水 康雄、大野 裕、永井 康介、重川 直輝、梁 剣波

    第82回応用物理学会秋季学術講演会  2021.09 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond to semiconductors and metals for low thermal resistance modules Invited International conference

    Naoteru Shigekawa and Jianbo Liang

    31st International Conference on Diamond and Carbon Materials (ICDCM 2021)  2021.09 

     More details

    Presentation type:Oral presentation (general)  

  • Low-temperature direct wafer bonding innovating CS device technologies Invited International conference

    Naoteru Shigekawa and Jianbo Liang

    International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH 2021)  2021.05 

     More details

    Presentation type:Oral presentation (general)  

  • Formation process of high thermal-stability diamond/Si and diamond/GaAs heterointerfaces by surface activated bonding Domestic conference

    Yutaka Ohno, Jianbo Liang, Yasuo Shimizu, Hideto Yoshida, Naoteru Shigekawa

    Materials Research Society (MRS)  2020.11 

     More details

    Presentation type:Oral presentation (general)  

  • Microscopic picture of direct bonding via surface activation for low-resistance Si/wide-gap semiconductor heterointerfaces International conference

    Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Hideto Yoshida, Reina Miyagawa, Yasuo Shimizu, and YasuyoshiNagai

    Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME)  2020.10 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of GaAs and diamond for high power device applications International conference

    Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Tianzhuo Zhan, Takanobu Watababe, NaotoKamiuchi, Yasuyoshi Nagai, and Naoteru Shigekawa

    Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME)   2020.10 

     More details

    Presentation type:Oral presentation (general)  

  • Structural analysis of Si/diamond heterointerfaces fabricated by surface activated bonding using LT-FIB and STEM International conference

    Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai

    Global Institute for Materials Research Tohoku Joint International Symposium on Radiation Effects in Materials and Actinide Science 2020 (GIMRT-REMAS2020)  2020.09 

     More details

    Presentation type:Poster presentation  

  • How to fabricate low-resistance heterointerfaces for tandem cells by direct bonding at low temperatures Domestic conference

    Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Hideto Yoshida, Reina Miyagawa, Yasuo Shimizu, Yasuyoshi Nagai

    37th European PV Solar Energy Conference and Exhibition (EU-PVSC)  2020.09 

     More details

    Presentation type:Oral presentation (general)  

  • ダイヤモンドと異種材料の直接接合による高効率デバイスの実現 Domestic conference

    梁 剣波

    科学技術振興機構、大阪市立大学、大阪府立大学、兵庫県立大学主催新技術説明会  2019.11 

     More details

    Presentation type:Oral presentation (general)  

  • 高出力パワーデバイス応用に向けた GaN/Diamond 直接接合の作製 Domestic conference

    梁 剣波,清水 康雄,大野 裕, 白崎 謙次, 永井 康介, 嘉数 誠, 金 聖祐, Martin Kuball, 重川 直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • GaAs/Diamond 直接接合の界面評価 Domestic conference

    中村 祐志, 清水 康雄, 大野 裕, 詹 天卓, 山下 雄一郎, 白崎 謙次, 永井 康介, 渡邊 孝信, 嘉数 誠, 重川 直輝, 梁 剣波

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • InGaP/ITO 界面における熱処理効果 Domestic conference

    崎原 盛偉,梁 剣波,重川 直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • ELO 法及び SAB 法による GaAs/Si 2 接合太陽電池の作製 Domestic conference

    小園 亮, 梁 剣波, 渡辺 健太郎, 杉山 正和, 重川 直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • 直接接合された表面実装型 LED パッケージにおける素子温度評価 Domestic conference

    小丸 啓吾,梁 剣波,西尾 佳高, 重川 直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合で作成したSi/GaAs界面の低温FIB法による断面TEM評価 Domestic conference

    大野裕, 清水康雄, 永井康介, 麻生亮太郎, 神内直人, 吉田秀人, 梁剣波, 重川直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • ELO 法及び SAB 法による GaAs/Si 2 接合太陽電池の作製 Domestic conference

    小園 亮、梁 剣波、渡辺 健太郎、杉山 正和、重川 直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si太陽電池に対するMnドープ半導体ナノ粒子の堆積効果 Domestic conference

    井筒由紀, 田中駿, 梁剣波, 楢崎友城, 西村悠陽, 金大貴, 重川直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合で形成した Si/GaAs 界面の低温 FIB 法によるアトムプローブ評価 Domestic conference

    清水 康雄, 海老澤 直樹, 大野 裕, 梁 剣波, 重川 直輝, 永井 康介

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si太陽電池に対するMnドープ半導体ナノ粒子の堆積効果 Domestic conference

    井筒由紀, 田中駿, 梁剣波, 楢崎友城, 西村悠陽, 金大貴, 重川直輝

    第80回応用物理学会秋季学術講演会  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures International conference

    Yutaka OHNO, Yasuo SHIMIZU, Naoki EBISAWA, Koji INOUE, Yasuyoshi NAGAI, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Jianbo LIANG, and Naoteru SHIGEKAWA

    Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019)  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures Domestic conference

    Yutaka OHNO, Yasuo SHIMIZU, Naoki EBISAWA, Koji INOUE, Yasuyoshi NAGAI, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Jianbo LIANG, Naoteru SHIGEKAWA

    Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019)  2019.09 

     More details

    Presentation type:Oral presentation (general)  

  • Fabrication of GaAs/diamond direct bonding for high power device applications International conference

    Y. NAKAMURA, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA, and Jianbo LIANG

    13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

     More details

    Presentation type:Poster presentation  

  • Fabrication of GaAs/diamond direct bonding for high power device applications Domestic conference

    Y. NAKAMURA, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA, Jianbo LIANG

    13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

     More details

    Presentation type:Oral presentation (general)  

  • Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications International conference

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

    13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

     More details

    Presentation type:Poster presentation  

  • Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications Domestic conference

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, Naoteru SHIGEKAWA

    13th Topical Workshop on Heterostructure Miccroelectronics (TWHM 2019)  2019.08 

     More details

    Presentation type:Oral presentation (general)  

  • Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding International conference

    Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, and Naoteru SHIGEKAWA

    30th International Conference on Defects in Semiconductors (ICDS30)  2019.07 

     More details

    Presentation type:Oral presentation (general)  

  • Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding Domestic conference

    Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, Naoteru SHIGEKAWA

    30th International Conference on Defects in Semiconductors (ICDS30)  2019.07 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates International conference

    Shoji YAMAJO, Jianbo LIANG, and Naoteru SHIGEKAWA

    13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

     More details

    Presentation type:Poster presentation  

  • Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates Domestic conference

    Shoji YAMAJO, Jianbo LIANG, Naoteru SHIGEKAWA

    13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

     More details

    Presentation type:Oral presentation (general)  

  • Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature International conference

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

    13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

     More details

    Presentation type:Poster presentation  

  • Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature Domestic conference

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Yasuyoshi NAGAI, Seongwoo KIM, Martin KUBALL, Makoto KASU, Naoteru SHIGEKAWA

    13th International Conference on Nitride Semiconductors (ICNS’13)  2019.07 

     More details

    Presentation type:Oral presentation (general)  

  • 高出力パワーデバイスに向けたダイヤモンドと異種材料の直接接合 Invited Domestic conference

    梁 剣波

    独立行政法人日本学術振興会接合界面創成技術第191委員会第22回研究会  2019.07 

     More details

    Presentation type:Oral presentation (general)  

  • 高出力パワーデバイスに向けたダイヤモンドと異種材料の直接接合 Domestic conference

    梁 剣波

    独立行政法人日本学術振興会接合界面創成技術第191委員会第22回研究会  2019.07 

     More details

    Presentation type:Oral presentation (general)  

  • Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells International conference

    Yuki IDUTSU, Shun TANAKA, Liang JIANBO, Tomoki NARAZAKI, Hisaaki NISHIMURA, DaeGwi KIM, Naoteru SHIGEKAWA

    The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

     More details

    Presentation type:Poster presentation  

  • Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells Domestic conference

    Yuki IDUTSU, Shun TANAKA, Liang JIANBO, Tomoki NARAZAKI, Hisaaki NISHIMURA, DaeGwi KIM, Naoteru SHIGEKAWA

    The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

     More details

    Presentation type:Oral presentation (general)  

  • GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions International conference

    Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

     More details

    Presentation type:Poster presentation  

  • GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions Domestic conference

    Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    The 46th IEEE Photovoltaic Specialist Conference (PVSC 46)  2019.06 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond and dissimilar materials for power device applications Invited International conference

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Naoki EBISAWA, Yasuyoshi NAGAI, Makoto KASU, and Naoteru SHIGEKAWA

    2019 International Symposium on Single Crystal Diamond and Electronics (SCDE 2019)  2019.06 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond and dissimilar materials for power device applications Domestic conference

    Jianbo LIANG, Yasuo SHIMIZU, Yutaka OHNO, Kenji SHIRASAKI, Naoki EBISAWA, Yasuyoshi NAGAI, Makoto KASU, Naoteru SHIGEKAWA

    2019 International Symposium on Single Crystal Diamond and Electronics (SCDE 2019)  2019.06 

     More details

    Presentation type:Oral presentation (general)  

  • Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam International conference

    Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Fabrication of Diamond/Cu Direct Bonding for Power Device Application Domestic conference

    Shinji KANDA, Satoshi MASUYA, Makoto KASU, Naoteru SHIGEKAWA, Jianbo LIANG

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions Domestic conference

    Takashi HISHIDA, Jianbo LIANG, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance Domestic conference

    Moritake SAKIHARA, Jianbo LIANG, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding Domestic conference

    Shotaro HORIKAWA, Sho MORITA, Jianbo LIANG, Yoshihisa KANEKO, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding Domestic conference

    Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, Yasuyoshi NAGAI

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam Domestic conference

    Yutaka OHNO, Hideto YOSHIDA, Naoto KAMIUCHI, Ryotaro ASO, Seiji TAKEDA, Yasuo SHIMIZU, Naoki EBISAWA, Yasuyoshi NAGAI, Jianbo LIANG, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance International conference

    Moritake SAKIHARA, Jianbo LIANG, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding International conference

    Shotaro HORIKAWA, Sho MORITA, Jianbo LIANG, Yoshihisa KANEKO, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions International conference

    Takashi HISHIDA, Jianbo LIANG, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Fabrication of Diamond/Cu Direct Bonding for Power Device Application International conference

    Shinji KANDA, Satoshi MASUYA, Makoto KASU, Naoteru SHIGEKAWA, and Jianbo LIANG

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding International conference

    Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, and Yasuyoshi NAGAI

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • A polyimide film/aluminum foil junction by modified surface activated bonding International conference

    H. AKAZAWA, Jianbo LIANG, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS Domestic conference

    Zexin WAN, Liang JIANBO, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • A polyimide film/aluminum foil junction by modified surface activated bonding Domestic conference

    H. AKAZAWA, Jianbo LIANG, Yoshitaka NISHIO, Moeko MATSUBARA, Hiroshi ASAHI, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS International conference

    Zexin WAN, Liang JIANBO, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Poster presentation  

  • Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature International conference

    Yutaka OHNO, Reina MIYAGAWA, Hideto YOSHIDA, Seiji TAKEDA, Jianbo LIANG, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature Domestic conference

    Yutaka OHNO, Reina MIYAGAWA, Hideto YOSHIDA, Seiji TAKEDA, Jianbo LIANG, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Effect of annealing temperature on diamond/Si interfacial structure Domestic conference

    Jianbo LIANG, Yan ZHUO, Satoshi MASUYA, Manikant SINGH, James POMEROY, Seongwoo KIM, Martin KUBALL, Makoto KASU, Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Effect of annealing temperature on diamond/Si interfacial structure International conference

    Jianbo LIANG, Yan ZHUO, Satoshi MASUYA, Manikant SINGH, James POMEROY, Seongwoo KIM, Martin KUBALL, Makoto KASU, and Naoteru SHIGEKAWA

    2019 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonging of diamond and Cu at room temperature for power devise application International conference

    Jianbo LIANG, Shinji KANDA, Satoshi MASUYA, Makoto KASU, and Naoteru SHIGEKAWA

    13th New Diamond and Nano Carbons Conference  2019.05 

     More details

    Presentation type:Poster presentation  

  • Direct bonging of diamond and Cu at room temperature for power devise application Domestic conference

    Jianbo LIANG, Shinji KANDA, Satoshi MASUYA, Makoto KASU, Naoteru SHIGEKAWA

    13th New Diamond and Nano Carbons Conference  2019.05 

     More details

    Presentation type:Oral presentation (general)  

  • パワーデバイス応用に向けたダイヤモンド/Cu 直接接合の形成 Domestic conference

    梁 剣波,神田 進司,桝谷 聡士, 嘉数 誠, 重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • パワーデバイス応用に向けたダイヤモンド/Cu 直接接合の形成 Domestic conference

    梁 剣波, 神田 進司, 桝谷 聡士, 嘉数 誠, 重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • パワーデバイス応用に向けたダイヤモンド/Cu 直接接合の形成 Domestic conference

    梁 剣波,神田 進司,桝谷 聡士, 嘉数 誠, 重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • 高出力デバイス応用に向けた GaAs/Diamond 直接接合の作製 Domestic conference

    中村 祐志,桝谷 聡士, 嘉数 誠, 重川 直輝, 梁 剣波

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • 高出力デバイス応用に向けた GaAs/Diamond 直接接合の作製 Domestic conference

    中村 祐志, 桝谷 聡士, 嘉数 誠, 重川 直輝, 梁 剣波

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合による GaAs/GaAs 界面における元素分布評価 Domestic conference

    清水 康雄, 海老澤 直樹, 大野 裕, 梁 剣波, 重川 直輝, 井上 耕治, 永井 康介

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • XPS による SiC/Si 接合界面の熱処理効果の評価 Domestic conference

    万 澤欣, 梁 剣波, 重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • XPS による SiC/Si 接合界面の熱処理効果の評価 Domestic conference

    万 澤欣,梁 剣波,重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • 高出力デバイス応用に向けた GaAs/Diamond 直接接合の作製 Domestic conference

    中村 祐志,桝谷 聡士, 嘉数 誠, 重川 直輝, 梁 剣波

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Poster presentation  

  • XPS による SiC/Si 接合界面の熱処理効果の評価 Domestic conference

    万 澤欣,梁 剣波,重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Poster presentation  

  • 表面活性化接合による GaAs/GaAs 界面における元素分布評価 Domestic conference

    清水 康雄,海老澤 直樹,大野 裕,梁 剣波,重川 直輝,井上 耕治,永井 康介

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合による GaAs/GaAs 界面における元素分布評価 Domestic conference

    清水 康雄,海老澤 直樹,大野 裕,梁 剣波,重川 直輝,井上 耕治,永井 康介

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • III-V/Si 多接合太陽電池の界面特性改善に向けた パターニング金属中間層 Domestic conference

    菱田 貴史、梁 剣波、重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Poster presentation  

  • III-V/Si 多接合太陽電池の界面特性改善に向けた パターニング金属中間層 Domestic conference

    菱田 貴史, 梁 剣波, 重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • III-V/Si 多接合太陽電池の界面特性改善に向けた パターニング金属中間層 Domestic conference

    菱田 貴史、梁 剣波、重川 直輝

    第66回応用物理学会春季学術講演会  2019.03 

     More details

    Presentation type:Oral presentation (general)  

  • Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography International conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

    2018 MRS Fall Meeting & Exhibit  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

    2018 MRS Fall Meeting & Exhibit  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

    Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, Yasuyoshi NAGAI

    2018 MRS Fall Meeting & Exhibit  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

    Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, and Yasuyoshi NAGAI

    2018 MRS Fall Meeting & Exhibit  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

    2018 MRS Fall Meeting & Exhibit  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography Domestic conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

    2018 MRS Fall Meeting & Exhibit  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance International conference

    Shunichi KONO, Jianbo LIANG and Naoteru SHIGEKAWA

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Poster presentation  

  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

    Shoji YAMAJO, Jianbo LIANG, Naoteru SHIGEKAWA

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

    Shunichi KONO, Jianbo LIANG, Naoteru SHIGEKAWA

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding International conference

    Shoji YAMAJO, Jianbo LIANG and Naoteru SHIGEKAWA

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Poster presentation  

  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding International conference

    Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

    Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

    Shunichi Kono, Jianbo Liang, Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

    Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

    Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance Domestic conference

    Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding Domestic conference

    Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interface for high thermal tolerance International conference

    Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa

    International Workshop on Nitride Semiconductors 2018 (IWN2018)  2018.11 

     More details

    Presentation type:Poster presentation  

  • Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding International conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

    Summit of Materials Science  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

    Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, Yasuyoshi NAGAI

    Summit of Materials Science 2018 (SMS2018  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, Yasuyoshi Nagai

    Summit of Materials Science  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding International conference

    Yasuo SHIMIZU, Naoki EBISAWA, Yutaka OHNO, Jianbo LIANG, Naoteru SHIGEKAWA, Koji INOUE, and Yasuyoshi NAGAI

    Summit of Materials Science 2018 (SMS2018  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

    Summit of Materials Science  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding Domestic conference

    Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa, Koji Inoue, and Yasuyoshi Nagai

    Summit of Materials Science  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond and Si by surface activated bonding Invited International conference

    Jianbo Liang

    International Forum on Wide Bandgap Semiconductors  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond and Si by surface activated bonding Domestic conference

    Jianbo Liang

    International Forum on Wide Bandgap Semiconductors  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond and Si by surface activated bonding Domestic conference

    Jianbo Liang

    International Forum on Wide Bandgap Semiconductors  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond and Si by surface activated bonding Domestic conference

    Jianbo Liang

    International Forum on Wide Bandgap Semiconductors  2018.10 

     More details

    Presentation type:Oral presentation (general)  

  • Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding International conference

    Jianbo Liang, Yan Zhou, Shoji Yamajor, Manabu Arai, Martin Kuball, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding Domestic conference

    Jianbo Liang, Yan Zhou, Shoji Yamajor, Manabu Arai, Martin Kuball, Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature Domestic conference

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Domestic conference

    Sho Morita, Jianbo Liang, Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding Domestic conference

    Jianbo Liang, Yan Zhou, Shoji Yamajor, Manabu Arai, Martin Kuball, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Domestic conference

    Sho Morita, Jianbo Liang, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature Domestic conference

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature Domestic conference

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding International conference

    Sho Morita, Jianbo Liang, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature International conference

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AiMS)  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si 太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

    田中駿, 楢崎友城, 梁剣波, 金大貴, 重川直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

    梁 剣波, 桝谷 聡士, 藤井 大樹, 金 聖祐, 嘉数 誠, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si 太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

    田中駿, 楢崎友城, 梁剣波, 金大貴, 重川直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

    梁 剣波, 桝谷 聡士, 藤井 大樹, 金 聖祐, 嘉数 誠, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si 太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

    田中駿, 楢崎友城, 梁剣波, 金大貴, 重川直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

    梁 剣波, 桝谷 聡士, 藤井 大樹, 金 聖祐, 嘉数 誠, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合及び犠牲層エッチングによる GaAs/Si 2 接合太陽電池の作製 Domestic conference

    小園 亮、尹 翔至、梁 剣波、重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合及び犠牲層エッチングによる GaAs/Si 2 接合太陽電池の作製 Domestic conference

    小園 亮, 尹 翔至, 梁 剣波, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線光電子分光評価 Domestic conference

    原 智也, 梁 剣波, 荒木 健次, 神岡 武文, ソダーバンル ハッサネット, 渡辺 健太郎, 杉山 正和, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線光電子分光評価 Domestic conference

    原 智也、梁 剣波、荒木 健次、神岡 武文、ソダーバンル ハッサネット、渡辺 健太郎、 杉山 正和、重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線光電子分光評価 Domestic conference

    原 智也、梁 剣波、荒木 健次、神岡 武文、ソダーバンル ハッサネット、渡辺 健太郎、 杉山 正和、重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合及び犠牲層エッチングによる GaAs/Si 2 接合太陽電池の作製 Domestic conference

    小園 亮、尹 翔至、梁 剣波、重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

    松本祐二、梁剣波、重川直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

    松本祐二, 梁剣波, 重川直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

    松本祐二、梁剣波、重川直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合法により作製したAl/ダイヤモンド接合界面の構造評価 Domestic conference

    神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合法により作製したAl/ダイヤモンド接合界面の構造評価 Domestic conference

    神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Ⅲ―Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入 Domestic conference

    菱田 貴史, 梁 剣波, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Ar高速原子ビームのスパッタリング効果を用いたpolyimide/Al接合の実現 Domestic conference

    赤澤 秀征, 梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Ⅲ―Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入 Domestic conference

    菱田 貴史、梁 剣波、重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Ar高速原子ビームのスパッタリング効果を用いたpolyimide/Al接合の実現 Domestic conference

    赤澤 秀征,梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Ar高速原子ビームのスパッタリング効果を用いたpolyimide/Al接合の実現 Domestic conference

    赤澤 秀征,梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Poster presentation  

  • Ⅲ―Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入 Domestic conference

    菱田 貴史、梁 剣波、重川 直輝

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合法により作製したAl/ダイヤモンド接合界面の構造評価 Domestic conference

    神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

    第79回応用物理学会秋季学術講演会  2018.09 

     More details

    Presentation type:Poster presentation  

  • The combination of diamond devices with Si LSI by surface activated bonding International conference

    Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa

    29th International Conference on Diamond and Carbon on Materials  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • The combination of diamond devices with Si LSI by surface activated bonding Domestic conference

    Jianbo Liang, Satoshi Masuya, Makoto Kasu, Naoteru Shigekawa

    29th International Conference on Diamond and Carbon on Materials  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • The combination of diamond devices with Si LSI by surface activated bonding Domestic conference

    Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa

    29th International Conference on Diamond and Carbon on Materials  2018.09 

     More details

    Presentation type:Oral presentation (general)  

  • Room-Temperature Direct Bonding of Diamond and Aluminum International conference

    Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

    12th New Diamond and Nano Carbons Conference  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • Room-Temperature Direct Bonding of Diamond and Aluminum Domestic conference

    Jianbo Liang, Shoji Yamajo, Martin Kuball, Naoteru Shigekawa

    12th New Diamond and Nano Carbons Conference  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • Room-Temperature Direct Bonding of Diamond and Aluminum Domestic conference

    Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

    12th New Diamond and Nano Carbons Conference  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • Interfacial strength and fracture toughness in integrated semiconductor materials International conference

    Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, and Martin Kuball

    2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • Interfacial strength and fracture toughness in integrated semiconductor materials Domestic conference

    Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, Martin Kuball

    2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • Interfacial strength and fracture toughness in integrated semiconductor materials Domestic conference

    Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, and Martin Kuball

    2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • Interfacial strength and fracture toughness in integrated semiconductor materials Domestic conference

    Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, and Martin Kuball

    2018 International Conference on Compound Semiconductor Manufacturing Technology  2018.05 

     More details

    Presentation type:Oral presentation (general)  

  • 金属箔を直接接合したセラミックス基板上の低損失コプレーナ線路の伝送特性評価 Domestic conference

    松浦 圭汰、梁 剣波、前沢 宏一、重川 直輝

    電子情報通信学会  2018.03 

     More details

    Presentation type:Oral presentation (general)  

  • p+-Siをゲート電極とする高耐熱AlGaN/GaN HEMT の作製 Domestic conference

    鴻野 駿一, 梁 剣波, 重川 直輝

    第65回応用物理学会春季学術講演会  2018.03 

     More details

    Presentation type:Oral presentation (general)  

  • Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価 Domestic conference

    梁 剣波、Zhou Yan、Gucmann Filip、Singh Manikant、Pomeroy James、Kuball Martin、重川 直輝

    第65回応用物理学会春季学術講演会  2018.03 

     More details

    Presentation type:Oral presentation (general)  

  • 直接接合によるSiC/Si 界面特性の熱処理温度依存性 Domestic conference

    下里 和史,梁 剣波,新井 学,重川 直輝

    第65回応用物理学会春季学術講演会  2018.03 

     More details

    Presentation type:Poster presentation  

  • Annealing effects on GaAs/ITO/Si junctions fabricated by surface activated bonding International conference

    Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa

    27th International Photovoltaic Science and Engineering Conference  2017.11 

     More details

    Presentation type:Oral presentation (general)  

  • GaAs single junction cells on Si substrates fabricated by surface activated bonding and etching of sacrificial layers International conference

    Sanji Yoon, Jianbo Liang, and Naoteru Shigekawa

    27th International Photovoltaic Science and Engineering Conference (PVSEC-27)  2017.11 

     More details

    Presentation type:Oral presentation (general)  

  • Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI International conference

    Jianbo Liang, Satoshi Masuya, Makoto Kasu, Manikant Singh, Michael J. Uren, Martin Kuball, and Naoteru Shigekawa

    12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)  2017.09 

     More details

    Presentation type:Poster presentation  

  • Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates International conference

    Keita Matsuura, Jianbo Liang, Koichi Maezawa, and Naoteru Shigekawa

    2017 International Conference on Solid State Devices and Materials  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • Impacts of annealing on interfaces of Al foil/Si junctions by using surface activated bonding International conference

    Katuya Huruna, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

    2017 International Conference on Solid State Devices and Materials  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • GaN/GaAs 接合を用いた npn 構造の光電流測定 Domestic conference

    山條 翔二、梁 剣波、ソダーバンル ハッサネット、渡辺 健太郎、杉山 正和、重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • Si 基板と接合した単結晶ダイヤモンドの残留応力評価 Domestic conference

    梁 剣波、桝谷 聡士、嘉数 誠、Zhou Yan、Gucmann Filip、Singh Manikant、Pomeroy James、Kuball Martin、重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • 室温表面活性化接合で作成した Si/GaAs 界面の熱処理による構造変化 Domestic conference

    大野 裕、吉田 秀人、竹田 精治、梁 剣波、重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • ITOを中間層とするInGaP/GaAs/ITO/Si3接合太陽電池の特性評価 Domestic conference

    原智也、小川智輝、梁剣波、荒木健次、神岡武文、山口真史、重川直輝

    第78回応用物理学会秋季学術講演会  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • 犠牲層エッチングによるⅢ-Ⅴ族薄層/Si接合の形成 Domestic conference

    尹 翔至、梁 剣波、重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

     More details

    Presentation type:Poster presentation  

  • Si太陽電池特性に対する半導体ナノ粒子の堆積効果 Domestic conference

    田中 駿,浅川 良介,小川 智輝,楢崎 友城,梁 剣波, 金 大貴, 重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

     More details

    Presentation type:Oral presentation (general)  

  • Formation of contacts with high thermal tolerance by using Si/GaN junctions International conference

    Jianbo Liang, Takuya Nishimura, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

    12th International Conference on Nitride Semiconductors (ICNS’12)  2017.07 

     More details

    Presentation type:Poster presentation  

  • Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions International conference

    Syoji Yamajo, Jianbo Liang, and Naoteru Shigekawa

    2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

     More details

    Presentation type:Oral presentation (general)  

  • Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature International conference

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, and Naoteru Shigekawa

    2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

     More details

    Presentation type:Oral presentation (general)  

  • Transport characteristics of Optically-Excited and Electrically-Injected Minority Electrons across p-Si/n-SiC Hetero-Interfaces International conference

    Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai

    2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding International conference

    Jianbo Liang, Tomoki Ogawa, Tomoya Hara, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

    2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

     More details

    Presentation type:Oral presentation (general)  

  • Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells International conference

    Naoteru Shigekawa and Jianbo Liang

    2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

     More details

    Presentation type:Oral presentation (general)  

  • Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding International conference

    Sho Morita, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yositaka Nishio, and Naoteru Shigekawa

    2017 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2017.05 

     More details

    Presentation type:Oral presentation (general)  

  • Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells International conference

    Naoteru Shigekawa and Jianbo Liang

    2017 International Conference on Electronics Packaging (ICEP 2017)  2017.04 

     More details

    Presentation type:Oral presentation (general)  

  • Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価 Domestic conference

    梁 剣波、Zhou Yan、Gucmann Filip、Singh Manikant、Pomeroy James、Kuball Martin、重川 直輝

    第65回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化ボンディング法によるAl箔/Si接合への熱処理効果 Domestic conference

    古名克也、梁剣波、松原萌子、ダムリンマルワン、西尾佳高、重川直輝

    第64回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • Si基板上GaAs/GaNヘテロ接合の縦方向電気特性評価(2) Domestic conference

    山條翔二、梁剣波、重川直輝

    第64回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化接合法によるAl箔/n+-Si/n-GaN接合のコンタクト抵抗評価 Domestic conference

    森田匠、西村拓也、梁剣波、松原萌子、ダムリンマルワン、西尾佳高、重川直輝

    第64回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • 表面活性化ボンディング法によるGaAs/ITO/Si接合のアニール温度依存性 Domestic conference

    原 智也、小川 智輝、梁 剣波、荒木 健次、神岡 武文、重川 直輝

    第64回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • InGaP/GaAs/Si3接合セルにおけるBonding 界面抵抗評価 Domestic conference

    重川直輝、梁剣波

    第64回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • 常温で表面活性化接合したSi/GaAs界面の原子・電子構造 Domestic conference

    大野裕、吉田秀人、竹田 精治、梁剣波、重川直輝

    第64回応用物理学会春季学術講演会  2017.03 

     More details

    Presentation type:Oral presentation (general)  

  • Determination of Band Structure at GaAs/4H-SiC Heterojunctions International conference

    Jianbo Liang, Sae Shimizu, Manabu Arai, and Naoteru Shigekawa

    Pacific Rim Meeting on Electrochemical and Solid-State Science 2016  2016.10 

     More details

    Presentation type:Poster presentation  

  • Ultra-Thick Metal Contact Fabrication Using Surface Activated Bonding International conference

    Pacific Rim Meeing on Electrochemical and Solid-State Science 2016  2016.10 

  • HAXPES measurements of GaAs thin film/Si junctions-effects of annealing on electrical properties Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • HAXPES measurements of GaAs thin film/Si junctions-band offset analysis Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Coupling properties between III-V/Si sub cells in InGaP/GaAs/Si triple-junction cells Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Impacts of Ar beam irradiation time and recovery by annealing in Si-based Schottky contact Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Surface activated bonding of Si substrates and ITO films Domestic conference

    The 77th JSAP Autumn meeting  2016.09 

  • Plane-view TEM of Si/GaAs interfaces fabricated by surface-activated bonding at RT Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Electrical characteristics of Cu foil/Si junctions by using surface activated bonding Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Electrical Properties of Al-Foil/Wide-Gap-Semiconductor Junctions Fabricated by Surface-Activated Bonding Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Direct bonding of single-crystal diamond and Si substrate Domestic conference

    The 77th JSAP Autumn Meeting  2016.09 

  • Fabrication and characterization of Si/4H-SiC interfaces by surface activated bonding International conference

    EMN Surface and Interface Meeting 2016  2016.09 

  • Effects of Ar beam irradiation on Si-Based Schottky contacts Domestic conference

    2016 IEEE International Meeting for Future of Electron Devices  2016.06 

  • Electrical characteristics of SAB-Based n+-n Ge/4H-SiC heterojunctions Domestic conference

    2016 IEEE International Meeting for Future of Electron Devices  2016.06 

  • Electrical characteristics of Al foil/Si junctions by surface activated bonding method Domestic conference

    2016 IEEE International Meeting for Future of Electron Devices  2016.06 

  • Effects of layered CdTe nano particles on Si solar cells Domestic conference

    2016 IEEE International Meeting for Future of Electron Devices  2016.06 

  • 熱処理による4H-SiC/Si HBTの電気特性の改善 Domestic conference

    -

    第63回応用物理学会春季学術講演会  2016.03 

  • 表面活性化ボンディング法によるAl箔/Si接合の電気特性評価 Domestic conference

    -

    第63回応用物理学会春季学術講演会  2016.03 

  • Si 基板上GaAs/GaN ヘテロ接合の縦方向電気特性評価 Domestic conference

    -

    第63回応用物理学会春季学術講演会  2016.03 

  • Room-temperature bonding technologies of dissimilar semiconductor materials applied for high-efficiencies and low-cost devices Domestic conference

    -

    World Engineering Conference and Convention: Engineering Innovation and Society  2015.11 

  • GaAs/GaAs接合の電気特性に対するアニール効果 Domestic conference

    -

    電子情報通信学会電子デバイス研究会  2015.11 

  • 表面活性化ボンディング法に依るSi/SiC接合の電気特性 Domestic conference

    -

    電子情報通信学会電子デバイス研究会  2015.11 

  • 常温接合法によるGaAs/4H-SiCヘテロ接合作製及び電気特性評価 Domestic conference

    -

    第76回応用物理学会秋季学術講演会  2015.09 

  • Electrical Properties of Room Temperature Bonded Si/GaN Heterojunctions without Buffer Layers International conference

    -

    11th International Conference on Nitride Semiconductors  2015.09 

  • Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding Domestic conference

    -

    2015 International Conference on Solid State Devices and Materials  2015.09 

  • Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy Domestic conference

    -

    2015 International Conference on Solid State Devices and Materials  2015.09 

  • Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by Surface Activated Bonding Domestic conference

    -

    2015 International Conference on Solid State Devices and Materials  2015.09 

  • 多接合太陽電池のボトムセル応用のためのSi逆ピラミッド構造の検討 Domestic conference

    -

    第76回応用物理学会秋季学術講演会  2015.09 

  • 表面活性化接合によるp-Si/n-GaN接合の電気特性評価 Domestic conference

    -

    第76回応用物理学会秋季学術講演会  2015.09 

  • GaAs/GaAs接合界面の電気特性に対するアニール効果の抽出の試み Domestic conference

    -

    第76回応用物理学会秋季学術講演会  2015.09 

  • 界面顕微光応答法によるSi/SiCヘテロp-n接合の2次元評価 Domestic conference

    -

    第76回応用物理学会秋季学術講演会  2015.09 

  • Band lineups in GaAs/GaN junctions using surfaceactivated bonding Domestic conference

    -

    11th Topical Workshop on Heterostructure Microelectronics  2015.08 

  • Fabrication and characterization of GaAs/4H-SiC junctions by using SAB Domestic conference

    -

    11th Topical Workshop on Heterostructure Microelectronics  2015.08 

  • Impacts of annealing in N2/H2 ambient on electrical properties of Si/GaN junctions Domestic conference

    -

    11th Topical Workshop on Heterostructure Microelectronics  2015.08 

  • Surface-activated bonding of n+-Si to n-GaN: A possible process for fabricating ohmic contacts to nitrides with smooth surface International conference

    -

    39th Workshop on Compound Semiconductor Devices and Integrated Circuits  2015.06 

  • Electrical characterization of GaAs/GaAs bonding interfaces Domestic conference

    -

    2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Electrical properties of n+-Si/n-GaN junctions by room temperature bonding Domestic conference

    -

    2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding Domestic conference

    -

    2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Interface characteristics of Si/Si junctions by using surface-activated bonding Domestic conference

    -

    2015 IEEE International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Impacts of optical properties of anti-reflection coatings on characteristics of InGaP/GaAs/Si hybrid triple-junction cells International conference

    -

    42nd IEEE International Photovoltaic Specialists Conference  2015.06 

  • タンデム太陽電池応用のためのSi/InGaP ヘテロ接合の電気伝導特性 Domestic conference

    -

    第62 回応用物理学会春季学術講演会  2015.03 

  • SAB 法による4H-SiC/Si HBT構造における少数キャリア注入特性 Domestic conference

    -

    第62 回応用物理学会春季学術講演会  2015.03 

  • SAB 法によるSi/Si 接合の界面特性の評価 Domestic conference

    -

    第62 回応用物理学会春季学術講演会  2015.03 

  • 表面活性化接合によるn+-Si/n-GaN コンタクトの検討 Domestic conference

    -

    第62 回応用物理学会春季学術講演会  2015.03 

  • AR 膜によるInGaP/GaAs/Si 3 接合セル中サブセル特性の制御 Domestic conference

    -

    第62 回応用物理学会春季学術講演会  2015.03 

  • InGaN/GaN MQW太陽電池におけるMQW構造が短絡電流に与える影響 Domestic conference

    -

    電子情報通信学会電子デバイス研究会  2014.11 

  • InGaP/GaAs/Si Hybrid Triple-Junction Cells by Surface-Activated Bonding of Invertedly-Grown III-V Heterostructures to Si- Based Bottom Cells Domestic conference

    -

    The 6th World Conference on Photovoltaic Energy Conversion  2014.11 

  • Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells International conference

    -

    2014 ECS and SMEQ Joint International Meeting  2014.10 

  • SiC 基板上Si 薄膜のウェット酸化と界面構造の安定 Domestic conference

    -

    第75 回応用物理学会秋季学術講演会  2014.09 

  • 異種材料直接接合によるInGaP/GaAs/Siタンデムセル Domestic conference

    -

    第75回応用物理学会秋季学術講演会  2014.09 

  • Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions Domestic conference

    -

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

  • III-V系半導体セルとイオン注入Siセルの貼り合わせによるハイブリッド3接合セル Domestic conference

    -

    第11回「次世代の太陽光発電システム」シンポジウム  2014.07 

  • Effects of annealing on GaAs/Si Bonding Interfaces for Hybrid Tandem Solar Cells Domestic conference

    -

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

  • Annealing temperature dependence of SAB based Si/Si junctions Domestic conference

    -

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

  • Annealing Characteristics of p+-Si/n-4H-SiC junctions by Using Surface Activated Bonding Domestic conference

    -

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration  2014.07 

  • Improvement in electrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing Domestic conference

    -

    2014 IEEE International Meeting for Future of Electron Devices, Kansai  2014.06 

  • Hybrid triple-junction solar cells by surface activate bonding of III-V Double-junction-cell heterostructures to ion-implanation-based Si cells International conference

    -

    40th IEEE Photovoltaic Specialist Conference  2014.06 

  • Fabrication and Characterization of Si/ 10m Mesa-Etched Si Junctions by Surface Activated Bonding Domestic conference

    -

    2014 IEEE International Meeting for Future of Electron Devices, Kansai  2014.06 

  • Effects of Annealing on GaAs/Si Bonding Interface for Hybrid Tandem Solar Cells Domestic conference

    -

    2014 IEEE International Meeting for Future of Electron Devices, Kansai  2014.06 

  • ハイプリッドタンデム太陽電池構造の接合界面に対するアニール効果 Domestic conference

    -

    第61回応用物理学会春季学術講演会  2014.03 

  • SAB法によるp+-Si/n-4H-SiC接合のアニール温度依存性 Domestic conference

    -

    第61回応用物理学会春季学術講演会  2014.03 

  • Si/4H-SiCヘテロ接合界面に対する熱処理の効果 Domestic conference

    -

    第61回応用物理学会春季学術講演会  2014.03 

  • 表面活性化ボンディング法によるSi/Si接合特性における熱処理依存性 Domestic conference

    -

    第61回応用物理学会春季学術講演会  2014.03 

  • SAB法による深いメサ構造を有するSi/Si接合における寄生容量の低減 Domestic conference

    -

    第61回応用物理学会春季学術講演会  2014.03 

  • 表面活性化ボンディング法によるタンデム太陽電池の作成 Domestic conference

    -

    電子情報通信学会技術研究報  2013.11 

  • InGaN/GaN MQW 太陽電池におけるMQW構造最適化に関する考察 Domestic conference

    -

    電子情報通信学会技術研究報  2013.11 

  • 表面活性化ボンディング法により形成したSi/SiCヘテロ接合の電気特性 Domestic conference

    -

    電子情報通信学会技術研究報  2013.11 

  • Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding Domestic conference

    3rd International Congress on Natural Science (ICNS 2013)  2013.10 

  • SAB法によるSi/Si接合特性におけるArプラズマ照射効果 Domestic conference

    -

    第74回秋季応用物理学会学術講演会  2013.09 

  • Electrical Properties of p+-Si /n-SiC Heterojunctions by Using Surface-Activated Bonding Domestic conference

    -

    10th Topical Workshop on Heterostructure Miroelectronics  2013.09 

  • I-V characteristics in Surface-Activated Bonding (SAB) based Si/SiC junctions at raised ambient temperatures Domestic conference

    -

    International Conference on Silicon Carbide and Related Materials 2013  2013.09 

  • 表面活性化ボンディングによるSi/4H-Sic接合のブレークダウン特性 Domestic conference

    -

    第74回秋季応用物理学会学術講演会  2013.09 

  • 表面活性化ボンディングによるInGaP/Si タンデム太陽電池の作製 Domestic conference

    -

    第74回秋季応用物理学会学術講演会  2013.09 

  • InGaN/GaN MQW 太陽電池における短絡電流とMQW構造の相関 Domestic conference

    -

    第74回秋季応用物理学会学術講演会  2013.09 

  • Type II band lineup in SAB-Based GaAs/Si Heterojunctions Domestic conference

    -

    2013 International Meeting for Future of Electron Devices, Kansai  2013.06 

  • Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface-Activated Bonding Domestic conference

    -

    39th IEEE Photovoltaic Specialists Conference  2013.06 

  • Band Structures of Si/InGaP heterojunctions by Using Surface-Activated Bonding Domestic conference

    -

    Compound Semiconductor Week 2013  2013.05 

  • Well-number dependence of photovoltaic properties of InGaP/GaN multiple quantum well solar cells Domestic conference

    -

    Compound Semiconductor Week 2013  2013.05 

  • Growth of high-quality (111) oriented cuprous oxide thin films oxidized in water vapor International conference

    -

    International Conference on Nanoscience and Nanotechnology 2013  2013.03 

  • 表面活性化ボンディングによるメサエッチングSi基板の接合特性評価 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるn-Si/n-4H-Sicヘテロ接合の作製及び評価 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによる低抵抗Si/III-V接合 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるSi/GaAsヘテロ接合のバンド構造評価 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるSi/InGaPヘテロ接合のバンド構造評価 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるSi/4H-SiC接合のC-V特性評価 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • InGaN/GaN MQW 太陽電池特性のペア数依存性 Domestic conference

    -

    第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるSi • 異種材料接合の電気特性評価 Domestic conference

    -

    電子情報通信学会技術研究報  2012.11 

  • 表面活性化ボンディングによるp-Si/n+-Si貼り合わせ構造の輸送特性評価 Domestic conference

    -

    第73回秋季応用物理学会学術講演会  2012.09 

  • 面活性化ウェハボンディングによるp-Si/n-GaAs貼り合わせ構造の特性評価 Domestic conference

    -

    第73回秋季応用物理学会学術講演会  2012.09 

▼display all

Industrial Property Rights

  • 電界効果トランジスタ及び電界効果トランジスタの製造方法

    重川直輝、梁剣波

     More details

    property_type:Patent 

    Application no:特願2015-145514 

    Announcement no:特開2017-28115 

    Publication no:特開2017-28115 

  • 半導体装置、及びその半導体装置の製造方法

    重川直輝、梁剣波

     More details

    property_type:Patent 

    Application no:特願2014-26134 

    Patent/Registration no:特開2015-153893 

Grant-in-Aid for Scientific Research

  • Si/ダイヤモンド直接接合界面ナノ構造の熱処理による制御

    Grant-in-Aid for Scientific Research(B)  2021.04

  • 縦型デバイス応用に向けた導電性ダイヤモンドとGaN、Ga2O3ヘテロ接合の形成

    Grant-in-Aid for Scientific Research(C)  2020.04

  • パワーデバイス応用に向けた酸化ガリウム/IV族半導体直接接合界面形成

    Grant-in-Aid for Scientific Research(B)  2019.04

  • 高効率素子に向けたワイドギャップ半導体/ダイヤモンド直接接合及び界面相構造の解明

    Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2018.04

Contract research

  • GaN成膜用低熱抵抗3C-SiC-on-ダイヤモンド基板の研究開発

    国立研究開発法人新エネルギー・産業技術総合開発機構(NEDO)  『官民による若手研究者発掘支援事業』マッチングサポートフェーズ  2022.09

  • RFデバイス用低熱抵抗4インチGaN-on-多結晶ダイヤモンド基板の研究開発

    国立研究開発法人科学技術振興機構  起業挑戦/産学共同促進/実用化挑戦A-STEP 産学共同(本格型)  2022.09

  • SiC/ダイヤモンド直接接合による大口径・高熱伝導率GaN-on-ダイヤモンド基板の研究開発

    2021.05

  • ダイヤモンド直接接合による高耐熱性界面の研究開発

    2019.07

  • 超高効率・低コストIII-V化合物太陽電池モジュールの研究開発(高効率・低コストIII-V/Siタンデム)/表面活性化接合によるⅢ-Ⅴ/Si多接合セル

    2018.04

  • シリコン基板上窒化物等異種材料タンデム太陽電池の研究開発

    2012.04

▼display all

Incentive donations / subsidies

  • エレクトロニクス応用に向けたダイヤモンドとシリコンの接合界面形成機構の解明とその実用性の検証

    公益財団法人ヒロセ国際奨学財団  2018.01

Other subsidies, etc.

  • パワー素子の放熱性向上に向けたGa2O3とSiC接合界面の形成

    大学  2021.05

  • 大口径ダイヤモンド基板実現に向けたダイヤモンド/Si接合界面形成機構の解明

    大学  2019.04

Outline of education staff

  • 電子・物理工学実験Ⅰでは、情報処理システムの動作を理解するために必要エレクトロニクスに関する基礎知識を実験により修得することを目的している。 電磁気学Ⅰ演習では、電磁気学をより深く理解し、それによって応用能力を身につけるためには、練習問題を実際に数多く解いてみることが極めて重要である。

Charge of on-campus class subject

  • 特別演習(電子・物理工学Ⅰ)

    2018     Graduate school

  • 特別演習(パワーエレクトロニクス工学II)

    2018     Undergraduate

  • 特別演習(パワーエレクトロニクス工学Ⅰ)

    2018     Graduate school

  • 卒業研究

    2018     Undergraduate

  • 電子・物理工学実験Ⅱ

    2018     Undergraduate

  • 電子・物理工学関係外書講読

    2018     Undergraduate

  • 電磁気学Ⅰ演習

    2018     Undergraduate

  • 電磁気学Ⅰ演習

    2017     Undergraduate

  • 電子・物理工学実験Ⅱ

    2017     Undergraduate

  • 卒業研究

    2017     Undergraduate

  • 電子・物理工学関係外書購読

    2017     Undergraduate

  • 特別演習(パワーエレクトロニクス工学Ⅰ)

    2017     Graduate school

  • 特別演習(パワーエレクトロニクス工学Ⅱ)

    2017     Graduate school

  • 卒業研究

    2016     Undergraduate

  • 電子・物理工学関係外書購読

    2016     Undergraduate

  • 特別演習(パワーエレクトロニクス工学Ⅰ)

    2016     Graduate school

  • 特別演習(パワーエレクトロニクス工学Ⅱ)

    2016     Graduate school

  • 電子・物理工学実験Ⅰ

    2016     Undergraduate

  • 電磁気学Ⅰ演習

    2016     Undergraduate

  • 電子・物理工学関係外書購読

    2015     Undergraduate

  • 卒業研究

    2015     Undergraduate

  • 特別演習(パワーエレクトロニクス工学Ⅰ)

    2015     Graduate school

  • 特別演習(パワーエレクトロニクス工学Ⅱ)

    2015     Graduate school

  • 前期特性研究

    2015     Graduate school

  • 電磁気学Ⅰ演習

    2015     Undergraduate

  • 電子・物理工学実験Ⅰ

    2015     Undergraduate

▼display all

Faculty development activities

  • FD活動への貢献  2019

     More details

    本学工学研究科機能創成科学教育研究センターが開催した2019年度第1回機能創成科学セミナーにてダイヤモンドと異種材料融合研究の最前線という題目で講演した。

Original item・Special report (Education Activity)

  • 2018

      More details

    Original item:研究室ソフトボール大会の幹事に務めた。

  • 2018

      More details

    Original item:3回生工場見学の引率に務めた。

  • 2017

      More details

    Original item:研究室ソフトボール大会の幹事に務めた

  • 2017

      More details

    Original item:ブリストル大学との共同研究連携に貢献した

  • 2016

      More details

    Original item:研究室ソフトボール大会の幹事に務めた。

Other

  • Job Career

    2019.04 - Now

  • Job Career

    2015.04 - 2019.03

  • Job Career

    2012.04 - 2015.03