IEEE

電気学会

電子情報通信学会

Institute of Physics

応用物理学会

APEX/JJAP編集貢献賞

2017.03  

Electrical properties and energy band alignments of p-Si/n-Ga₂O₃ and p⁺-Si/n-Ga₂O₃ heterostructures fabricated by surface-activated bonding Reviewed

Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, Masataka Higashiwaki

Journal of Applied Physics   133   194503-1 - 194503-7   2023.05

Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol-gel glass films Reviewed

Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa

Japanese Journal of Applied Physics   62 ( SK )   SK1005-1 - SK1005-7   2023.03（ ISSN:00214922 ）

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures Reviewed International coauthorship

Yan Zhou, Shi Zhou, Shun Wan, Bo Zou, Yuxia Feng, Rui Mei, Heng Wu, Naoteru Shigekawa, Jianbo Liang, Pingheng Tan, Martin Kuball

122 ( 8 )   082103-1 - 082103-6   2023.02（ ISSN:00036951 ）

Room-temperature bonding of GaN and diamond via a SiC layer Reviewed

Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

Functional Diamond   2 ( 1 )   142 - 150   2022.12

Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding Reviewed

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

Diamond and Related Materials   130   109425-1 - 109425-8   2022.12（ ISSN:09259635 ）

High thermal conductivity in wafer-scale cubic silicon carbide crystals Reviewed International coauthorship

Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hao Zhou, Hidetoshi Asamura, Hiroki Uratani, Janak Tiwari, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Tianli Feng, Naoteru Shigekawa, David G. Cahill

Nature Communications   13   7201-1 - 7201-9   2022.11

Heterojunctions fabricated by surface activated bonding—dependence of their nanostructural and electrical characteristics on thermal process Invited Reviewed

Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

Japanese Journal of Applied Physics   61 ( 12 )   120101-1 - 120101-19   2022.11

Quantitative capacitance measurements in frequency modulation electrostatic force microscopy Reviewed

Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa, Takuji Takahashi

Japanese Journal of Applied Physics   61 ( SL )   SL1005-1 - SL1005-7   2022.09（ ISSN:00214922 ）

Fabrication of β-Ga₂O₃/Si heterointerface and characterization of interfacial structures for high-power device applications Reviewed

Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

61 ( SF )   SF1001-1 - SF1001-7   2022.06（ ISSN:00214922 ）

Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding Reviewed

Y. Ohno, J. Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa

61 ( SF )   SF1006-1 - SF1006-5   2022.06（ ISSN:00214922 ）

Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates Reviewed

Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, Naoteru Shigekawa

Japanese Journal of Applied Physics   61 ( SF )   SF1008-1 - SF1008-4   2022.06（ ISSN:00214922 ）

Intrinsic luminescence-downshifting effects of Zn-based Mn-doped nanoparticle layers on Si solar cells Reviewed

Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa

Japanese Journal of Applied Physics   61 ( 6 )   062004-1 - 062004-6   2022.05（ ISSN:00214922 ）

Comparison of thermal stabilities of p⁺-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes Reviewed

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

Japanese Journal of Applied Physics   61 ( SF )   SF1009-1 - SF1009-9   2022.04（ ISSN:00214922 ）

AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process Reviewed

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa

Applied Physics Express   15 ( 4 )   041003-1 - 041003-5   2022.03（ ISSN:18820778 ）

Fabrication of n-Si/n-Ga<inf>2</inf>O<inf>3</inf> heterojunctions by surface-activated bonding and their electrical properties Reviewed

Wang Z.

Journal of Applied Physics   131 ( 7 )   2022.02（ ISSN:00218979 ）

Fabrication of p(+)-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties Reviewed

Uehigashi Yota, Ohmagari Shinya, Umezawa Hitoshi, Yamada Hideaki, Liang Jianbo, Shigekawa Naoteru

DIAMOND AND RELATED MATERIALS   120   2021.12（ ISSN:0925-9635 ）

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design Reviewed

Liang Jianbo, Kobayashi Ayaka, Shimizu Yasuo, Ohno Yutaka, Kim Seong-Woo, Koyama Koji, Kasu Makoto, Nagai Yasuyoshi, Shigekawa Naoteru

ADVANCED MATERIALS   33 ( 43 )   2021.10（ ISSN:0935-9648 ）

Room temperature direct bonding of diamond and InGaP in atmospheric air Reviewed International coauthorship

Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Hongxing Wang, Naoteru Shigekawa

Functional Diamond   1 ( 1 )   110 - 116   2021.02

Water-soluble ZnSe/ZnS:Mn/ZnS quantum dots convert UV to visible light for improved Si solar cell efficiency Reviewed

Nishimura Hisaaki, Maekawa Takaya, Enomoto Kazushi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Kim DaeGwi

JOURNAL OF MATERIALS CHEMISTRY C   9 ( 2 )   693 - 701   2021.01（ ISSN:2050-7526 ）

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications Reviewed

Liang Jianbo, Nakamura Yuji, Zhan Tianzhuo, Ohno Yutaka, Shimizu Yasuo, Katayama Kazu, Watanabe Takanobu, Yoshida Hideto, Nagai Yasuyoshi, Wang Hongxing, Kasu Makoto, Shigekawa Naoteru

DIAMOND AND RELATED MATERIALS   111   2021.01（ ISSN:0925-9635 ）

Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces Reviewed

Ohno Yutaka, Liang Jianbo, Shigekawa Naoteru, Yoshida Hideto, Takeda Seiji, Miyagawa Reina, Shimizu Yasuo, Nagai Yasuyoshi

APPLIED SURFACE SCIENCE   525   2020.09（ ISSN:0169-4332 ）

III-V Thin Film Solar Cells Bonded to Si Substrates via Metal Grids Reviewed

T. Hishida, J. Liang, N. Shigekawa

ECS Transaction   98 ( 4 )   117 - 123   2020.09

Nanostructural Investigation on GaAs//Indium Tin Oxide/Si Junctions for III-V-on-Si Hybrid Multijunction Cells Reviewed

4. T. Hara, J. Liang, K. Araki, T. Kamioka, H. Sodabanlu, K. Wanatabe, M. Sugiyama, N. Shigekawa

ECS Transaction   98 ( 4 )   125 - 133   2020.09

Low Temperature Direct Bonding Technologies of Semiconductor Substrates Invited Reviewed

Naoteru Shigekawa, Jianbo Liang

The IEICE Transactions on Electronics (Japanese Edition)   J103-C ( 7 )   341 - 348   2020.07

Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped Reviewed

Y. Idutsu, J.Liang, H.Nishimura, D.G.Kim, N.Shigekawa

Proceedings, 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC)   234 - 237   2020.05

Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells Reviewed

Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang, Akira Yasui

Solar Energy Materials and Solar Cells   2020.03

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management Reviewed

Jianbo Liang, Yutaka Ohno, Yuichiro Yamashita, Yasuo Shimizu, Shinji Kanda, Naoto Kamiuchi, Seongwoo Kim, Koyama Koji, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa

ACS Applied Nano Materials   2020.02

GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions Reviewed

Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

Proceedings 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019   1018 - 1020   2020.02

Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells Reviewed

Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, N.Shigekawa

Proceedings 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019   1753 - 1755   2020.02

Low Temperature Bonding for 3D Integration Invited Reviewed

Shigekawa N.

Japanese Journal of Applied Physics   59 ( SB )   2020.02（ ISSN:00214922 ）

Fabrication of diamond/Cu direct bonding for power device applications Reviewed

Shinji Kanda, Yasuo Shimizu, Yutaka Ohno, Kenji Shirasaki, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa, and Jianbo Liang

Japanese Journal of Applied Physics   2019.10

Low-resistance semiconductor/semiconductor junctions with intermediate metal grids for III-V-on-Si multijunction solar cells Reviewed

Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   2019.10

Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding Reviewed

Yutaka Ohno, Hideto Yoshida, Naoto Kamiuchi, Ryotaro Aso, Seiji Takeda, Yasuo Shimizu, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

Japanese Journal of Applied Physics   2019.10

Synthesis of Mn-Doped ZnSe-ZnS Alloy Quantum Dots by a Hydrothermal Method Reviewed

Nishimura Hisaaki, Lin Yuxin, Hizume Masayuki, Taniguchi Taichi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Okuno Eiichi, Kim DaeGwi

公益社団法人 日本化学会　CHEMISTRY LETTERS   48 ( 9 )   1081 - 1083   2019.09（ ISSN:0366-7022 ）

Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies Reviewed

Matsuura Keita, Liang Jianbo, Maezawa Koichi, Shigekawa Naoteru

IEEE TRANSACTIONS ON ELECTRON DEVICES   66 ( 9 )   3946 - 3952   2019.09（ ISSN:0018-9383 ）

Annealing effect of surface-activated bonded diamond/Si interface Reviewed

Liang Jianbo, Zhou Yan, Masuya Satoshi, Gucmann Filip, Singh Manikant, Pomeroy James, Kim Seongwoo, Kuball Martin, Kasu Makoto, Shigekawa Naoteru

DIAMOND AND RELATED MATERIALS   93   187 - 192   2019.03（ ISSN:0925-9635 ）

Hydrothermal synthesis of ZnSe:Mn quantum dots and their optical properties Reviewed

Nishimura Hisaaki, Lin Yuxin, Hizume Masayuki, Taniguchi Taichi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Okuno Eiichi, Kim DaeGwi

AIP ADVANCES   9 ( 2 )   2019.02（ ISSN:2158-3226 ）

Room-temperature direct bonding of diamond and Al Reviewed

Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

Scripta Mater.   159   58 - 61   2019.01（ ISSN:1359-6462 ）

Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding Reviewed

Yamajo Shoji, Yoon Sanji, Liang Jianbo, Sodabanlu Hassanet, Watanabe Kentaro, Sugiyama Masakazu, Yasui Akira, Ikenaga Eiji, Shigekawa Naoteru

APPLIED SURFACE SCIENCE, Elsevier   473   627 - 632   2018.12（ ISSN:0169-4332 ）

Stability of diamond/Si bonding interface during device fabrication process Reviewed

Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, Naoteru Shigekawa

Applied Physics Express, Japan Society of Applied Physics   12   016501-1 - 016501-5   2018.11

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Reviewed

S. Morita, J. Liang, and N. Shigekawa

ECS Trans   86 ( 5 )   137 - 142   2018.10

Electrical properties of GaAs//indium tin oxide/Si junctions for III-V-on-Si hybrid multijunction cells Reviewed

Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

57 ( 8 )   08RD05-1 - 08RD05-6   2018.08（ ISSN:0021-4922 ）

GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance Reviewed

Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takefumi Kamioka, Kenji Araki, and Masafumi Yamaguchi

IEEE Journal of Photovoltaics   8 ( 3 )   879 - 886   2018.05（ ISSN:2156-3381 ）

Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces Reviewed

Shigekawa Naoteru, Shimizu Sae, Liang Jianbo, Shingo Masato, Shiojima Kenji, Arai Manabu

Institute of Physics　JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE04-1 - 02BE04-5   2018.02（ ISSN:0021-4922 ）

Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions Reviewed

Yamajo Shoji, Liang Jianbo, Shigekawa Naoteru

Institute of Physics　JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE02-1 - 02BE02-5   2018.02（ ISSN:0021-4922 ）

Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding Reviewed

Liang Jianbo, Ogawa Tomoki, Hara Tomoya, Araki Kenji, Kamioka Takefumi, Shigekawa Naoteru

Institute of Physics　JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE03-1 - 02BE03-5   2018.02（ ISSN:0021-4922 ）

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding Reviewed

Morita Sho, Liang Jianbo, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

Institute of Physics　JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE01-1 - 02BE01-5   2018.02（ ISSN:0021-4922 ）

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature Reviewed

Ohno Yutaka, Yoshida Hideto, Takeda Seiji, Liang Jianbo, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BA01-1 - 02BA01-3   2018.02（ ISSN:0021-4922 ）

Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices Invited Reviewed

SHIGEKAWA Naoteru

The Vacuum Society of Japan, Journal of the Vacuum Society of Japan   60 ( 11 )   421 - 427   2017.11

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices Reviewed

Liang Jianbo, Furuna Katsuya, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 9 )   P626 - P632   2017.08（ ISSN:2162-8769 ）

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Device Reviewed

Liang Jianbo, Furuna Katsuya, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   2017.08

Realization of direct bonding of single crystal diamond and Si substrates Reviewed

Liang Jianbo, Masuya Satoshi, Kasu Makoto, Shigekawa Naoteru

APPLIED PHYSICS LETTERS   110 ( 11 )   111603-1 - 111603-4   2017.03（ ISSN:0003-6951 ）

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate Reviewed

Mitsuhara M., Watanabe N., Yokoyama H., Iga R., Shigekawa N.

JOURNAL OF CRYSTAL GROWTH   449   86 - 91   2016.09（ ISSN:0022-0248 ）

Electrical Properties of Al-Foil/Wide-Gap-Semiconductor Junctions Fabricated by Surface-Activated Bonding

Morita Sho, Nishimura Takuya, Liang Jianbo, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, shigekawa Naoteru

JSAP Annual Meetings Extended Abstracts   2016.2 ( 0 )   2872 - 2872   2016.09（ eISSN:24367613 ）

Ultra-thick metal ohmic contact fabrication using surface activated bonding

J. Liang, K. Furuna, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa

ECS Transaction   75 ( 9 )   25 - 32   2016.09

Determination of Band Structure at GaAs/4H-SiC Heterojunctions

J. Liang, S. Shimizu, M. Arai, and N. Shigekawa

ECS Transaction   75 ( 9 )   221 - 227   2016.09

Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment Reviewed

Liang J., Nishida S., Arai M., Shigekawa N.

JOURNAL OF APPLIED PHYSICS   120 ( 3 )   7   2016.07（ ISSN:0021-8979 ）

Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

J. Liang, S. Nishida, M. Arai, and N. Shigekawa

Journal of Applied Physics   120   034504-1-034504-7   2016.07

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structures grown by metalorganic molecular beam epitaxy on GaAs (100) sbstrate

M. Mitsuhara, N. Watanabe, H. Yokoyama, R. Iga, and N. Shigekawa

Journal of Crystal Growth   449   86 - 91   2016.06

Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding Reviewed

Chai Li, Liang Jianbo, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 6 )   2016.06（ ISSN:0021-4922 ）

Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding

Li Chai, Jianbo Liang, and Naoteru Shigekawa

Journal of Applied Physics   55   068002-1-068002-3   2016.05

Low-temperature (>= 400 degrees C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst Reviewed

Yamamoto Akio, Kodama Kazuki, Shigekawa Naoteru, Matsuoka Takashi, Kuzuhara Masaaki

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 5 )   2016.05（ ISSN:0021-4922 ）

Low-temperature (> 400 ºC) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

Akio Yamamoto, Kazuki Kodama, Naoteru Shigekawa, Takashi Matsuoka, and Masaaki Kuzuhara

Japanese Journal of Applied Physics   55   05FD04-1-05FD04-5   2016.04

Mapping of Si/SiC p-n heterojunctions using scanning internal photoemission microscopy Reviewed

Shingo Masato, Liang Jianbo, Shigekawa Naoteru, Arai Manabu, Shiojima Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016.04（ ISSN:0021-4922 ）

Mapping of Si/SiC p–n heterojunctions using scanning internal photoemission microscopy

Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji Shiojima

Japanese Journal of Applied Physics   55   04ER15   2016.03

4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding

Jianbo Liang, Sae Shimizu, Shota Nishida, Naoteru Shigekawa, and Manabu Arai

ECS Solid State Lett.   4   Q55   2015.09

MOVPE growth of thick (similar to 1 mu m) InGaN on AIN/Si substrates for InGaN/Si tandem solar cells Reviewed

Yamamoto Akio, Kodama Kazuki, Hasan Md. Tanvir, Shigekawa Naoteru, Kuzuhara Masaaki

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.08（ ISSN:0021-4922 ）

Current-voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells Reviewed

Shigekawa Naoteru, Liang Jianbo, Onitsuka Ryusuke, Agui Takaaki, Juso Hiroyuki, Takamoto Tatsuya

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.08（ ISSN:0021-4922 ）

MOCVD growth of thick (~1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells

Akio Yamamoto, Kazuki. Kodama, Md. Tanvir Hasan, Naoteru Shigekawa, and Masaaki Kuzuhara

Jpn. J. Appl. Phys.   54   08KA12   2015.07

Current-voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells

Naoteru Shigekawa, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto

Jpn. J. Appl. Phys.   54   08KE03   2015.07

Growth temperature dependent critical thickness for phase separation in thick (similar to 1 mu m) InxGa1-xN (x=0.2-0.4) Reviewed

Yamamoto A., Hasan Tanvir Md, Kodama K., Shigekawa N., Kuzuhara M.

JOURNAL OF CRYSTAL GROWTH   419   64 - 68   2015.06（ ISSN:0022-0248 ）

Thick (similar to 1 mu m) p-type InxGa1-xN (x similar to 0.36) grown by MOVPE at a low temperature (similar to 570 degrees C) Reviewed

Yamamoto A., Hasan T. Md., Kodama K., Shigekawa N., Kuzuhara M.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   252 ( 5 )   909 - 912   2015.05（ ISSN:0370-1972 ）

Growth temperature dependent critical thickness for phase separation in thick(~1 µm) InxGa1-xN (x=0.2-0.4)

A. Yamamoto, Tanvir Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara

J. Crystal Growth   419   64   2015.03

Advances in Low-Temperature Bonding Technologies for 3D Integration Reviewed

Suga Tadatomo, Shigekawa Naoteru, Higurashi Eiji, Takagi Hideki, Shimomura Kazuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   2015.03（ ISSN:0021-4922 ）

Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si Reviewed

Nishida Shota, Liang Jianbo, Hayashi Tomohiro, Arai Manabu, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   1 - 30210   2015.03（ ISSN:0021-4922 ）

Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding Reviewed

Morimoto Masashi, Liang Jianbo, Nishida Shota, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   1 - 30212   2015.03（ ISSN:0021-4922 ）

Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding Reviewed

Liang Jianbo, Chai Li, Nishida Shota, Morimoto Masashi, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   1 - 30211   2015.03（ ISSN:0021-4922 ）

Thick (~1 µm) p-type InxGa1-xN (x~0.36) grown by MOVPE at a low temperature (~570 ºC)

A. Yamamoto, T. Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara

Physica Stat. Solidi B   42739   DOI: 10.1002/pssb.201451736   2015.02

Correlation between the electrical properties of p-Si/n-4H-SiC junctions and cocentrations of acceptors in Si

Shota Nishida, Jianbo Liang, Tomohiro Hayashi, Manabu Arai and Naoteru Shigekawa

Jpn. J. Appl. Phys.   54   30210   2015.02

Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding

Masashi Morimoto, Jianbo Liang, Shota Nishida and Naoteru Shigekawa

Jpn. J. Appl. Phys.   54   30212   2015.02

Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding

Jianbo Liang, Li Chai, Shota Nishida, Masashi Morimoto and Naoteru Shigekawa

Jpn. J. Appl. Phys.   54   30211   2015.02

Impacts of Optical Properties of Anti-Reflection Coatings on Characteristics of InGaP/GaAs/Si Hybrid Triple-Junction Cells Reviewed

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2015（ ISSN:0160-8371 ）

4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding Reviewed

Liang Jianbo, Shimizu Sae, Nishida Shota, Shigekawa Naoteru, Arai Manabu

ECS SOLID STATE LETTERS   4 ( 11 )   Q55 - Q57   2015（ ISSN:2162-8742 ）

Critical thickness for phase separation in MOVPE-grown thick InGaN Reviewed

KODAMA K., HASAN Md Tanvir, NOMURA H., SHIGEKAWA N., YAMAMOTO A., KUZUHARA M.

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   114 ( 337 )   9 - 14   2014.11（ ISSN:0913-5685 ）

Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Reviewed

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   114 ( 338 )   103 - 106   2014.11（ ISSN:0913-5685 ）

Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Reviewed

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   114 ( 336 )   103 - 106   2014.11（ ISSN:0913-5685 ）

Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Reviewed

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   114 ( 337 )   103 - 106   2014.11（ ISSN:0913-5685 ）

Critical thickness for phase separation in MOVPE-grown thick InGaN Reviewed

KODAMA K., HASAN Md Tanvir, NOMURA H., SHIGEKAWA N., YAMAMOTO A., KUZUHARA M.

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   114 ( 338 )   9 - 14   2014.11（ ISSN:0913-5685 ）

Critical thickness for phase separation in MOVPE-grown thick InGaN Reviewed

KODAMA K., HASAN Md Tanvir, NOMURA H., SHIGEKAWA N., YAMAMOTO A., KUZUHARA M.

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   114 ( 336 )   9 - 14   2014.11（ ISSN:0913-5685 ）

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell Reviewed

Watanabe Noriyuki, Mitsuhara Manabu, Yokoyama Haruki, Liang Jianbo, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 11 )   1 - 112301   2014.11（ ISSN:0021-4922 ）

Effects of interface state charges on the electrical properties of Si/SiC heterojunctions Reviewed

Liang J., Nishida S., Hayashi T., Arai M., Shigekawa N.

APPLIED PHYSICS LETTERS   105 ( 15 )   2014.10（ ISSN:0003-6951 ）

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

N. Watanabe, M. Mitsuhara, H. Yokoyama, J. Liang, and N. Shigekawa

Jpn. J. Appl. Phys.   53   112301   2014.10

Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells

Naoteru Shigekawa, Jianbo Liang, Masashi Morimoto, and Shota Nishida

ECS Trans.   64 ( 5 )   235 - 242   2014.10

Effects of interface state charges on the electrical properties of Si/SiC heterojunctions

J. Liang, S. Nishida, T. Hayashi, M. Arai, and N. Shigekawa

Appl. Phys. Lett.   105   151607   2014.10

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions Reviewed

J. Liang, S. Nishida, M. Arai, and N. Shigekawa

Applied Physics Letters   104 ( 16 )   2014.04（ ISSN:0003-6951 ）

Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

J. Liang, S. Nishida, M. Arai, and N. Shigekawa

Appl. Phys. Lett.   104   161604   2014.04

Surface-activated-bonding-based InGaP-on-Si double-junction cells Reviewed

Naoteru Shigekawa, Masashi Morimoto, Shota Nishida, and Jianbo Liang

Japanese Journal of Applied Physics   53 ( 4 )   1 - 4   2014.04（ ISSN:0021-4922 ）

Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding

14.N. Shigekawa, J. Liang, N. Watanabe, and A. Yamamoto

Physica Status Solidi C   11 ( 42798 )   644 - 647   2014.03

Hybrid Triple-Junction Solar Cells by Surface Activated Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells

Naoteru Shigekawa, et al.

Proc. 40th IEEE Photovoltaic Specialists Conference   534 - 537   2014

Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding Reviewed

Naoteru Shigekawa, Jianbo Liang, Noriyuki Watanabe, and Akio Yamamoto

Physica Status Solidi C   11 ( 3-4 )   644 - 647   2014（ ISSN:1610-1642|1862-6351 ）

Hybrid Triple-Junction Solar Cells by Surface Activate Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells Reviewed

Shigekawa N., Morimoto M., Chai L., Onitsuka R., Liang J., Juso H., Agui T., Takamoto T.

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   534 - 537   2014

I-V characteristics in Surface-Activated Bonding (SAB) based Si/SiC junctions at raised ambient temperatures Reviewed

Shota Nishida, Jianbo Liang, Masashi Morimoto,Naoteru Shigekawa, and Manabu Arai

Materials Science Forum   778/780 ( Pt.2 )   718 - 721   2014（ ISSN:0255-5476 ）

Phase separation of thick (>1 μm) InxGa1-xN (x > 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN Reviewed

Akio Yamamoto, Md. Tanvir Hasan, Akihiro Mihara, Norihiko Narita, Naoteru Shigekawa, and Masaki Kuzuhara

Applied Physics Express   7 ( 3 )   1 - 35502   2014（ ISSN:1882-0778|1882-0786 ）

Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells Reviewed

Shigekawa Naoteru, Liang Jianbo, Morimoto Masashi, Nishida Shota

SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS   64 ( 5 )   235 - 242   2014（ ISSN:1938-6737|1938-5862 ）

I-V characteristics in surface-activated bonding (SAB) based Si/SiC junctions in raised ambient temperatures

S. Nishida, J. Liang, M. Morimoto, and M. Arai

Materials Science Forum   778-780   718   2014

Surface-activated-bonding-based InGaP-on-Si double-junction cells

M. Morimoto, S. Nishida, and J. Liang

Japanese Journal of Applied Physics   53   04ER05   2014

Phase separation of thick (~1 µm) InxGa1-xN (x~0.3) grown on AlN/Si (111): Simulateneous emergence of metallic In-Ga and GaN-rich InGaN

Applied Physics Express   7   35502   2014

Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   113 ( 330 )   27 - 30   2013.11（ ISSN:0913-5685 ）

Investigation on the optimum MQW structure for InGaN/GaN solar cells Reviewed

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   113 ( 331 )   31 - 34   2013.11（ ISSN:0913-5685 ）

Investigation on the optimum MQW structure for InGaN/GaN solar cells Reviewed

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   113 ( 329 )   31 - 34   2013.11（ ISSN:0913-5685 ）

Investigation on the optimum MQW structure for InGaN/GaN solar cells Reviewed

WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   113 ( 330 )   31 - 34   2013.11（ ISSN:0913-5685 ）

Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Reviewed

Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   113 ( 331 )   21 - 25   2013.11（ ISSN:0913-5685 ）

Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Reviewed

Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   113 ( 329 )   21 - 25   2013.11（ ISSN:0913-5685 ）

Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Reviewed

Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   113 ( 330 )   21 - 25   2013.11（ ISSN:0913-5685 ）

Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   113 ( 331 )   27 - 30   2013.11（ ISSN:0913-5685 ）

Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   113 ( 329 )   27 - 30   2013.11（ ISSN:0913-5685 ）

Electrical properties of Si/Si interfaces by using surface-activated bonding Reviewed

J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, and N. Shigekawa

Journal of Applied Physics   114 ( 18 )   2013.11（ ISSN:0021-8979 ）

Band structures of Si/InGaP heterojunctions by using surface-activated bonding

J. Liang, M. Morimoto, S. Nishida, and N. Shigekawa

Phys. Status Solidi C   10   1644   2013.09

Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x similar to 0.3) grown on GaN/alpha-Al2O3(0001) template Reviewed

Yamamoto Akio, Mihara Akihiro, Shigekawa Naoteru, Narita Norihiko

APPLIED PHYSICS LETTERS   103 ( 8 )   2013.08（ ISSN:0003-6951 ）

Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization Reviewed

Noriyuki Watanabe, Haruki Yokoyama, and Naoteru Shigekawa

Japanese Journal of Applied Physics   52 ( 8 )   08JN03 - 08JN03-3   2013.08（ ISSN:0021-4922 ）

A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate Reviewed

Akio Yamamoto, Akihiro Mihara, Yangdong Zheng, and Naoteru Shigekawa

Japanese Journal of Applied Physics   52 ( 8 )   08JD03 - 08JD03-3   2013.08（ ISSN:0021-4922 ）

Surface-activating-bonding-based low resistance Si/III-V junctions Reviewed

J. Liang, S. Nishida, M. Morimoto and N. Shigekawa

IEE Electronics Letters   49 ( 13 )   830 - 831   2013.06（ ISSN:0013-5194 ）

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding Reviewed

Liang Jianbo, Miyazaki Tatsuya, Morimoto Masashi, NISHIDA Shota, WATANABE Noriyuki, SHIGEKAWA Naoteru

Japan Society of Applied Physics　Applied physics express   6 ( 2 )   "021801 - 1"-"021801-3"   2013.02（ ISSN:18820778 ）

MOVPE Growth of InxGa1-xN (x~0.5) on Si(111) substrates with a pn junction on the surface

A. Yamamoto, A. Mihara, D. Hironaga, K. Sugita, A. G. Bhuiyan, A. Hashimoto, N. Shigekawa, N. Watanabe

Physica Status Solidi (C)   10   437 - 440   2013.02

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding Reviewed

Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, and Naoteru Shigekawa

Applied Physics Express   6 ( 2 )   1 - 21801   2013.02（ ISSN:1882-0778 ）

Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface Activated Bonding

Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, Naoteru Shigekawa

Applied Physics Express   6   021801-1-021801-3   2013.01

Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface Activated Bonding

N. Shigekawa, J. Liang, and N. Watanabe

Proc. 39th IEEE Photovoltaic Specialists Conference   2470 - 2473   2013

Band structures of Si/InGaP heterojunctions by using surface activated bonding Reviewed

Jianbo Liang, Masashi Morimoto, Shota Nishida, and Naoteru Shigekawa

Physica Status Solidi C   10 ( 11 )   1644 - 1647   2013（ ISSN:1610-1642|1862-6351 ）

Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

Naoteru Shigekawa, Jianbo Liang, and Noriyuki Watanabe

Proceedings of 39th IEEE Photovoltaic Specialists Conference   2470 - 2473   2013（ ISSN:0160-8371 ）

MOVPE growth of InxGa1-xN (x similar to 0.5) on Si(111) substrates with a pn junction on the surface Reviewed

Yamamoto A., Mihara A., Hironaga D., Sugita K., Bhuiyan A. G., Hashimoto A., Shigekawa N., Watanabe N.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3   10 ( 3 )   437 - 440   2013（ ISSN:1610-1642|1862-6351 ）

MOVPE-grown n-InxGa1-xN (x similar to 0.5)/p-Si(111) template as a novel substrate Reviewed

Yamamoto A., Mihara A., Sugita K., Davydov V. Yu, Shigekawa N.

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII   8641   2013（ ISSN:0277-786X ）

Electrical properties of Si/Si interfaces by using surface-activated bonding

J. Liang, T. Miyazaki, M. Morimoto, S. Nishida

Journal of Applied Physics   114   183703   2013

Band structures of Si/InGaP heterojunctions by using surface-activated bonding

J. Liang, M. Morimoto, S. Nishida

Physica Status Solidi C   10   1644   2013

Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x~0.3) grown on GaN/a-Al2O3(0001) template

6.A. Yamamoto, A. Mihara, and N. Narita

Applied Physics Letters   103   82113   2013

Surface-activating-bonding-based low-resistance Si/III-V junctions

J. Liang, S. Nishida, M. Morimoto

Electronics Letters   49 ( 13 )   830   2013

A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate

A. Yamamoto, A. Mihara, Y. Zheng

Japnese Journal of Applied Physics   52   08JB19   2013

Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

N. Watanabe, H. Yokoyama

Japanese Journal of Applied Physics   52   08JN03   2013

Electrical Properties of Si-based Junctions by SAB

N. Shigekawa, N. Watanabe, E. Higurashi

Proc. 3rd International IEEE Workshop on Low Temperature Bonding for 3D Integration   109 - 112   2012.12

Electrical Properties of Si-Based Heterojunctions by Surface-Activated Reviewed

LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   112 ( 329 )   1 - 5   2012.11（ ISSN:0913-5685 ）

Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Reviewed

WATANABE Noriyuki, YOKOYAMA Haruki, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   112 ( 329 )   21 - 24   2012.11（ ISSN:0913-5685 ）

Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Reviewed

WATANABE Noriyuki, YOKOYAMA Haruki, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   112 ( 327 )   21 - 24   2012.11（ ISSN:0913-5685 ）

Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Reviewed

WATANABE Noriyuki, YOKOYAMA Haruki, SHIGEKAWA Naoteru

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   112 ( 328 )   21 - 24   2012.11（ ISSN:0913-5685 ）

Electrical Properties of Si-Based Heterojunctions by Surface-Activated Reviewed

LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   112 ( 328 )   1 - 5   2012.11（ ISSN:0913-5685 ）

Electrical Properties of Si-Based Heterojunctions by Surface-Activated Reviewed

LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   112 ( 327 )   1 - 5   2012.11（ ISSN:0913-5685 ）

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

Noriyuki Watanabe, Haruki Yokoyama, Naoteru Shigekawa, Ken-ichi Sugita, Akio Yamamoto

Japanese Jounral of Applied Physics   51 ( 10 )   10ND10-1-10ND10-5   2012.10

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Haruki Yokoyama, Takuya Hoshi, Naoteru Shigekawa, and Minoru Ida

Japanese Journal of Applied Physics   51 ( 2 )   025601-1-025601-4   2012.02

Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile Reviewed

Nada Masahiro, Muramoto Yoshifumi, Yokoyama Haruki, Shigekawa Naoteru, Ishibashi Tadao, Kodama Satoshi

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 2,Issue 2 )   1 - 2   2012.02（ ISSN:0021-4922|1347-4065 ）

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition Reviewed

Yokoyama Haruki, Hoshi Takuya, Shigekawa Naoteru, Ida Minoru

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 2,Issue 1 )   1 - 25601   2012.02（ ISSN:0021-4922|1347-4065 ）

Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile

Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Tadao Ishibashi, Satoshi Kodama

Japanese Journal of Applied Physics   51 ( 2 )   02BG03-1-02BG03-4   2012.02

Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces Reviewed

Akazawa M., Gao B., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   9 ( 3-4 )   592 - 595   2012（ ISSN:1610-1642|1862-6351 ）

MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Reviewed

Bhuiyan Ashraful G., Mihara A., Esaki T., Sugita K., Hashimoto A., Yamamoto A., Watanabe N., Yokoyama H., Shigekawa N.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   9 ( 3-4 )   670 - 672   2012（ ISSN:1610-1642|1862-6351 ）

Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces

M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, N. Shigekawa

Physica Status Solidi (C)   9 ( 42798 )   592 - 595   2011.12

MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

Ashraful G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, N. Shigekawa

Physica Status Solidi (C)   9 ( 42798 )   670 - 672   2011.11

Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures Reviewed

Akazawa M., Gao B., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

APPLIED PHYSICS LETTERS   98 ( 14 )   142117   2011.04（ ISSN:0003-6951 ）

Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa

Applied Physics Letters   98 ( 14 )   142117-1-142117-3   2011.03

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy Reviewed

Akazawa M., Gao B., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

JOURNAL OF APPLIED PHYSICS   109 ( 1 )   13703   2011.01（ ISSN:1089-7550|0021-8979 ）

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, N. Shigekawa

Journal of Applied Physics   109 ( 1 )   013703-1-013703-8   2011.01

Investigation of polarization-induced electric field in ultrathin InAlN layers on GaN by X-ray photoelectron spectroscopy Reviewed

Akazawa M., Hashizume T., Gao B., Yamahata S., Hiroki M., Shigekawa N.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   8 ( 7-8 )   2139 - 2141   2011（ ISSN:1610-1642|1862-6351 ）

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs

Naoteru Shigekawa, Suehiro Sugitani

IEICE Transaction on Electronics   E93-C ( 8 )   1212 - 1217   2010.08

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs Reviewed

Shigekawa Naoteru, Sugitani Suehiro

IEICE TRANSACTIONS ON ELECTRONICS   E93C ( 8 )   1212 - 1217   2010.08（ ISSN:0916-8524 ）

Suppression of space charge effect in MIC-PD using composite field structure Reviewed

Yoshimatsu T., Muramoto Y., Kodama S., Furuta T., Shigekawa N., Yokoyama H., Ishibashi T.

ELECTRONICS LETTERS   46 ( 13 )   941 - 943   2010.06（ ISSN:0013-5194|1350-911X ）

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness Reviewed

Hiroki Masanobu, Maeda Narihiko, Shigekawa Naoteru

IEICE TRANSACTIONS ON ELECTRONICS   E93-C ( 5 )   579 - 584   2010.05（ ISSN:0916-8524|1745-1353 ）

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy Reviewed

Akazawa M., Matsuyama T., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

APPLIED PHYSICS LETTERS   96 ( 13 )   132104   2010.03（ ISSN:0003-6951 ）

Suppression of space charge effect in MIC-PD using composite field structure

T. Yoshimatsu, Y. Muramoto, S. Kodama, T. Furuta, N. Shigekawa, H. Yokoyama, and T. Ishibashi

Electronics Letters   46 ( 13 )   941 - 943   2010.01

Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x=0.245-0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers Reviewed

Hiroki Masanobu, Maeda Narihiko, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 4,Issue 2 )   1 - 4   2010（ ISSN:0021-4922|1347-4065 ）

Numerical analysis of impact of stress in passivation films on electrical properties in AlGaN/GaN heterostructures Reviewed

Shigekawa Naoteru, Sugitani Suehiro

IEICE ELECTRONICS EXPRESS   6 ( 14 )   1045 - 1050   2009.07（ ISSN:1349-2543 ）

DC variable harmonic pass band operation of AlGaN/GaN surface acoustic wave devices Reviewed

Hohkawa Kohji, Koh Keishin, Nishimura Kazumi, Shigekawa Naoteru

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 Issue 1 )   7104 - 7107   2008.09（ ISSN:0021-4922|1347-4065 ）

Surface acoustic waves in reverse-biased AlGaN/GaN hetero structures Reviewed

Shigekawa Naoteru, Nishimura Kazumi, Yokoyama Haruki, Hohkawa Kohji

IEEE TRANSACTIONS ON ELECTRON DEVICES   55 ( 7 )   1585 - 1591   2008.07（ ISSN:1557-9646|0018-9383 ）

SAW filters composed of interdigital Schottky and Ohmic contacts on AlGaN/GaN heterostructures Reviewed

Shigekawa Naoteru, Nishimura Kazumi, Suemitsu Tetsuya, Yokoyama Haruki, Hohkawa Kohji

IEEE ELECTRON DEVICE LETTERS   28 ( 2 )   90 - 92   2007.02（ ISSN:0741-3106|1558-0563 ）

Interdigital transducers with control gates on AlGaN/GaN heterostructures Reviewed

Shigekawa Naoteru, Nishimura Kazumi, Suemitsu Tetsuya, Yokoyama Haruki, Hohkawa Kohji

APPLIED PHYSICS LETTERS   89 ( 3 )   2006.07（ ISSN:0003-6951 ）

SAW characteristics of GaN with n(+)-GaN IDTs Reviewed

Nishimura K, Shigekawa N, Yokoyama H, Hohkawa K

ELECTRONICS LETTERS   42 ( 1 )   62 - 63   2006.01（ ISSN:0013-5194|1350-911X ）

Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs Reviewed

Shiojima K., Makimura T., Maruyama T., Suemitsu T., Shigekawa N., Hiroki M., Yokoyama H.

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6   3 ( 6 )   2360 - 2363   2006（ ISSN:1862-6351|1610-1634 ）

Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers Reviewed

Shiojima K, Makimura T, Maruyama T, Kosugi T, Suemitsu T, Shigekawa N, Hiroki M, Yokoyama H

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   469 - 472   2006（ ISSN:1610-1634 ）

Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate high-electron-mobility transistors on sapphire substrates Reviewed

Shiojima K, Makimura T, Suemitsu T, Shigekawa N

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 12 )   8435 - 8440   2005.12（ ISSN:0021-4922|1347-4065 ）

Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates Reviewed

Shigekawa Naoteru, Nishimura Kazumi, Yokoyama Haruki, Shiojima Kenji, Hohkawa Kohji

IEICE ELECTRONICS EXPRESS   2 ( 19 )   495 - 500   2005.10（ ISSN:1349-2543 ）

SAW characteristics of GaN layers with surfaces exposed by dry etching Reviewed

Nishimura Kazumi, Shigekawa Naoteru, Yokoyama Haruki, Hiroki Masanobu, Hohkawa Kohji

IEICE ELECTRONICS EXPRESS   2 ( 19 )   501 - 505   2005.10（ ISSN:1349-2543 ）

Side-gate effects on transfer characteristics in GaN-based transversal filters Reviewed

Shigekawa N, Nishimura K, Yokoyama H, Hohkawa K

APPLIED PHYSICS LETTERS   87 ( 8 )   1 - 84102   2005.08（ ISSN:0003-6951 ）

Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Reviewed

Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N

SOLID-STATE ELECTRONICS   49 ( 8 )   1352 - 1360   2005.08（ ISSN:0038-1101 ）

Al/AlN/InP metal-insulator-semiconductor-diode characteristics with amorphous AlN films deposited by electron-cyclotron-resonance sputtering Reviewed

Saito K, Ono T, Shimada M, Shigekawa N, Enoki T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 1A )   334 - 342   2005.01（ ISSN:0021-4922|1347-4065 ）

Temperature dependence of surface acoustic wave characteristics of GaN layers on sapphire substrates Reviewed

Nishimura K, Shigekawa N, Yokoyama H, Hohkawa K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 16-19 )   564 - 565   2005（ ISSN:0021-4922|1347-4065 ）

AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers Reviewed

Shiojima K, Makimura T, Kosugi T, Sugitani S, Shigekawa N, Ishikawa H, Egawa T

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7   2 ( 7 )   2623 - 2626   2005（ ISSN:1610-1634 ）

Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors Reviewed

Suemitsu T, Shiojima K, Makimura T, Shigekawa N

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   211 - 213   2005（ ISSN:0021-4922|1347-4065 ）

High temperature stability of p⁺-Si/p-diamond heterojunction diodes Reviewed

Uehigashi Y.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10（ ISBN:9781665405676 ）

Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device Reviewed

Kagawa R.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10（ ISBN:9781665405676 ）

Fabrication of Ga<inf>2</inf>O<inf>3</inf>/3C-SiC direct bonding for efficient surface heat dissipation Reviewed

Nagai H.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10（ ISBN:9781665405676 ）

Preface

Shigekawa N.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10（ ISBN:9781665405676 ）

表面活性化接合法による厚膜・低損失配線の実現 Invited

重川　直輝, 梁　剣波, 前澤　宏一

ケミカルエンジニヤリング（化学工業社）   65 ( 11 )   686 - 693   2020.11

高効率パワー素子の実現に向けたダイヤモンドと異種材料の直接接合技術の開発 Invited

梁　剣波、重川　直輝

ケミカルエンジニヤリング（化学工業社）   65 ( 8 )   469 - 474   2020.08

ダイヤモンドと異種材料の直接接合による高効率デバイスの実現 Invited

梁 剣波, 重川 直輝

月刊JETI   68 ( 6 )   37 - 40   2020.06

A polyimide film/aluminum foil junction by modified surface activated bonding Reviewed

Akazawa H.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05（ ISBN:9784904743072 ）

Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature Reviewed

Ohno Y.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05（ ISBN:9784904743072 ）

Electrical properties of p Ga Aspatterned metal layer/n Si junctions Reviewed

Hishida T.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05（ ISBN:9784904743072 ）

Directly bonded n InGaP/n Si junctions with a low interface resistance Reviewed

Sakihara M.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05（ ISBN:9784904743072 ）

Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam Reviewed

Ohno Y.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05（ ISBN:9784904743072 ）

次世代エレクトロニクスを拓くダイヤモンドと異種材料の直接接合 Invited

重川直輝, 梁剣波

New Diamond   34 ( 4 )   3 - 5   2018.10

Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions Reviewed

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   77   2017

Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding Reviewed

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   51   2017

Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding Reviewed

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   68   2017

Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells Reviewed

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   52   2017

Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature Reviewed

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   4   2017

Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells Reviewed

2017 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP)   229 - 231   2017

Transport Characteristics of Optically-Excited and Electrically-Injected Minority Electrons across p-Si/n-SiC Hetero-Interfaces Reviewed

2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   26   2017

Electrical characteristics of SAB-Based n(+)-n Ge/4H-SiC heterojunctions Reviewed

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   74 - 75   2016

Effects of Ar beam irradiation on Si-Based Schottky contacts Reviewed

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   40 - 41   2016

Effects of layered CdTe nano particles on Si solar cells Reviewed

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   114 - 115   2016

Electrical characteristics of Al foil/Si junctions by surface activated bonding method Reviewed

2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   86 - 87   2016

Interface characteristics of Si/Si junctions by using surface-activated bonding Reviewed

Yamajo S., Liang J., Morimoto M., Shigekawa N.

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   62 - 63   2015

Electrical characterization of GaAs/GaAs bonding interfaces Reviewed

Chai L., Nishida S., Liang J., Shigekawa N., Morimoto M.

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   44 - 45   2015

Electrical properties of n(+)-Si/n-GaN junctions by room temperature bonding Reviewed

Nishimura T., Shigekawa N., Liang J., Watanabe N.

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   46 - 47   2015

Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding Reviewed

Shimizu S., Liang J., Nishida S., Shigekawa N., Morimoto M.

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   64 - 65   2015

Annealing Characteristics of p(+)-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding Reviewed

Nishida S., Liang J., Hayashi T., Morimoto M., Shigekawa N., Arai M.

2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   54   2014

Annealing temperature dependence of SAB based Si/Si junctions Reviewed

Morimoto M., Liang J., Nishida S., Li Chai., Takemura K., Shigekawa N.

2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   52   2014

Effects of Annealing on GaAs/Si Bonding Interfaces for Hybrid Tandem Solar Cells Reviewed

Chai L., Liang J., Nishida S., Morimoto M., Shigekawa N.

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   2014

Fabrication and Characterization of Si/similar to 10-mu m Mesa-Etched Si Junctions by Surface Activated Bonding Reviewed

Takemura K., Nishida S., Morimoto M., Shigekawa N., Liang J.

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   2014

Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing Reviewed

Hayashi T., Nishida S., Liang J., Arai M., Shigekawa N.

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   2014

Investigation on the effects of annealing process on the electrical properties of n(+)-Si/n-SiC junctions Reviewed

Liang Jianbo, Nishida Shota, Hayashi Tomohiro, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   53   2014

Type II band lineup in SAB-Based GaAs/Si Heterojunctions Reviewed

2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013)   2013

表面活性化ウェハボンディングによる半導体接合の特性評価

重川直輝, 渡邊則之, 日暮栄治

応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   2012

25-Gbit/s RECEIVER OPTICAL SUBASSEMBLY USING MAXIMIZED-INDUCED-CURRENT PHOTODIODE Reviewed

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010（ ISSN:1092-8669 ）

A CAN-type MIC-PD ROSA operating at 40-Gbit/s Reviewed

2010 36TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATION (ECOC), VOLS 1 AND 2   2010

COMPOSITE-FIELD MIC-PDS FOR LOW-BIAS-VOLTAGE OPERATION Reviewed

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010（ ISSN:1092-8669 ）

Continuous-wave Terahertz Spectroscopic Imaging at over 1 THz for Pharmaceutical Applications Reviewed

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)   2010

ULTRA-THIN InAIP/InGaAs HETEROJUNCTIONS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY Reviewed

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)   222 - +   2009（ ISSN:1092-8669 ）

Single Phase Transducer Consisting of AlGaN/GaN Reviewed

HOHKAWA Kohji, OSHIYAMA Satoshi, TERAO Yuji, KOH Keishin, NISHIMURA Kazumi, SHIGEKAWA Naoteru

2008 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4 AND APPENDIX   2008 Vol.4   1928 - 1931   2008（ ISSN:1051-0117 ）

Wideband Layer Mode Acoustic Devices on GaN/Sapphire Substrate Reviewed

2006 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-5, PROCEEDINGS   2301 - +   2006（ ISSN:1051-0117 ）

AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation Reviewed

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5   1331 - +   2006（ ISSN:0149-645X ）

Basic Study on SAW Device with Semiconductor Layer as IDTs and Control Means for Variable Operation Reviewed

2006 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-5, PROCEEDINGS   2314 - +   2006（ ISSN:1051-0117 ）

Transfer effects of induced carriers by SAW Reviewed

KANESHIRO C., KOH K., HOHKAWA K., NISHIMURA K., SHIGEKAWA N.

2005 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4   2005 Vol.4   1896 - 1899   2005（ ISSN:1051-0117 ）

Layer mode devices on epitaxially grown GaN films on Al2O3 Reviewed

HOHKAWA K., KANESHIRO C., KOH K., NISHIMURA K., SHIGEKAWA N.

2005 IEEE Ultrasonics Symposium, Vols 1-4   2005 Vol.3   1600 - 1603   2005（ ISSN:1051-0117 ）

Study on photo-induced acoustic charge transport effect in GaN film Reviewed

HOHKAWA K, KANESHIRO C, KOH K, NISHIMURU K, SHIGEKAWA N

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4   421 - 424   2005（ ISSN:0149-645X ）

常温接合技術による新機能界面・デバイスの創成 Invited Domestic conference

重川 直輝, 梁 剣波, 大野 裕, 井上 耕治, 永井 康介

ワイドギャップ半導体学会第14回研究会  2023.12  ワイドギャップ半導体学会

Low-Temperature Direct Bonding of Diamond—Approach for Fabricating Low-Thermal-Resistance Widegap Devices Invited International conference

Naoteru Shigekawa, Ryo Kagawa, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai,

2023 MRS Fall Meeting  2023.11  Materials Research Society

Fabrication of nitride/3C-SiC/polycrystalline diamond heterostructures for efficient thermal management of power devices International conference

Chiharu Moriyama, Keisuke Kawamura, Sumito Ouchi, Hiroki Uratani, Yutaka Ohno, Koji Inoue, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11  The Japan Association for Crystal Growth

Fabrication and Electrical Characterization of GaAs/GaN Junctions International conference

S. Ishimi, M. Hirose, Y. Shimizu, Y. Ohno, Y. Nagai, J. Liang, N. Shigekawa

244th ECS Meeting  2023.10  Electrochemical Society

高放熱パワーデバイス応用に向けたGaN/3C-SiC on-polycrystalline diamond HEMTs構造の作製 Domestic conference

森山 千春, 川村 啓介, 大内 澄人, 浦谷 泰基, 大野 裕, 井上 耕治, 永井 康介, 重川 直輝, 梁 剣波

2023年 第84回 応用物理学会 秋季学術講演会  2023.09  応用物理学会

表面活性化接合法で作製したGaN/GaN界面近傍のケルビン・プローブ・フォース顕微鏡による断面計測 Domestic conference

文 思翰, 澤井 一樹, 梁 剣波, 重川 直輝, 高橋 琢二

2023年 第84回 応用物理学会 秋季学術講演会  2023.09  応用物理学会

Integration of 3C-SiC and polycrystalline diamond for large-scale high-performance GaN device production International conference

Jianbo Liang, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Chiharu Moriyama, Hazuki Tomiyama, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

33rd International Conference on Diamond and Carbon Materials (ICDCM 2023)  2023.09  Elsevier

Integration of Si and polycrystalline diamond by a surface-activated bonding method International conference

Jianbo Liang, Yoshiki Nishibayashi, Minori Teramoto, Marika Takeuchi, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

33rd International Conference on Diamond and Carbon Materials (ICDCM 2023)  2023.09  Elsevier

ダイヤモンド直接接合による半導体素子の熱抵抗低減 Invited Domestic conference

重川直輝

応用物理学会先進パワー半導体分科会　第２５回研究会  2023.09  応用物理学会 先進パワー半導体分科会

ダイヤモンド//異種材料接合の高機能化合物半導体素子応用 Domestic conference

重川　直輝, 香川　諒, 梁　剣波, 清水　康雄, 大野　裕, 永井　康介

電気学会　2023 年　電子・情報・システム部門大会  2023.08  電気学会

半導体デバイスプロセスに革新をもたらす異種材料直接接合 Invited Domestic conference

重川直輝

日本真空工業会関西支部第37回定時総会並びに講演会  2023.06  日本真空工業会関西支部

GaN HEMT on-diamond構造の作製及び特性評価 Domestic conference

早川 譲稀, 大野 裕, 永井 康介, 重川 直輝, 梁 剣波

第70回応用物理学会春季学術講演会  2023.03  応用物理学会

α-Ga₂O₃/4H-SiC直接接合の作製と界面構造の評価 Domestic conference

山本 誠志郎, 大島 祐一, 大野 裕, 永井 康介, 重川 直輝, 梁 剣波

第70回応用物理学会春季学術講演会  2023.03  応用物理学会

High Performance GaN-on-Diamond Devices Fabrication using Diamond Wafer Bonding Technology Invited International conference

Jianbo Liang, Yutaka Ohno and Naoteru Shigekawa

Hasselt Diamond Workshop 2023 - SBDD XXVII  2023.03 

転位発生源となるシリコン非対称傾角粒界の形成過程 Domestic conference

大野 裕, 斉藤 光, 梁 剣波, 横井 達矢, 松永 克志, 重川 直輝, 井上 耕治, 永井 康介, 波多 聰

第70回応用物理学会春季学術講演会  2023.03  応用物理学会

Characterization of GaN/GaN interfaces fabricated by surface-activated bonding International conference

Kazuki Sawai, Jianbo liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanoparticles (ISPlasma2023)  2023.03  Japan Society of Applied Physics

Direct wafer bonding of nitride and its application for advanced devices Invited International conference

Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanoparticles (ISPlasma2023)  2023.03  Japan Society of Applied Physics

Effects of thick luminescent down-shifting layers with ZnSe/ZnS:Mn/ZnS nanoparticles on Si solar cells International conference

Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa

33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11  The Japan Photovoltaic Society (J-PVS)

Fabrication and electrical characterization of n⁺-Si/p-diamond heterojunction diodes Domestic conference

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

The 41st Electronic Materials Symposium  2022.10 

X-on-Diamond Structures on Bonding-First Concept and Their Application to Advanced Devices Invited Domestic conference

Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

The 41st Electronic Materials Symposium  2022.10 

Fabrication of High-Thermal-Stability GaN/Diamond Junctions via Intermediate Layers International conference

Jianbo Liang, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa

Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration (WaferBond '22)  2022.10 

n⁺-Si/p-ダイヤモンドヘテロ接合ダイオードの耐熱性評価 Domestic conference

上東 洋太, 大曲 新矢, 梅沢 仁, 山田 英明, 梁 剣波, 重川 直輝

2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

表面活性化接合法によるGaN/GaN接合界面の評価 Domestic conference

澤井 一樹, 梁 剣波, 清水 康雄, 大野 裕, 永井 康介, 重川 直輝

2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

高出力デバイス応用に向けたGaN/3C-SiC on-diamond HEMT構造の作製 Domestic conference

香川 諒, 重川 直輝, 梁 剣波, 川村 啓介, 坂井田 佳紀, 大内 澄人, 浦谷 泰基, 清水 康夫, 大野 裕, 長井 康介

2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

Si太陽電池に対する高光学密度半導体ナノ粒子膜の堆積効果 Domestic conference

粟井 啓伍, 井筒 由紀, 梁 剣波, 西村 悠陽, 金 大貴, 沈 用球, 重川 直輝

2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

表面活性化接合法で作製したn-Si/n-Siおよびp-Si/p-Si接合の二重バイアス変調静電引力顕微鏡による評価 Domestic conference

小林 大地, 梁 剣波, 重川 直輝, 高橋 琢二

2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

パワー素子の放熱向上に向けたGa₂O₃/3C-SiC直接接合の特性評価 Domestic conference

長井 啓, 川村 啓介, 浦谷 泰基, 坂井田 佳紀, 重川 直輝, 梁 剣波

2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

Dual Bias Modulation Electrostatic Force Microscopy on n-type Si/Si Junctions Fabricated by Surface-activated Bonding International conference

Daichi Kobayashi, Naoteru Shigekawa, Jianbo Liang, Takuji Takahashi

The 22nd International Vacuum Congress (IVC-22)  2022.09  The Japan Society of Vacuum and Surface Science

Electrical properties in wafer-bonding-based GaAs/GaN junctions on free-standing substrates International conference

M. Hirose, S. Ishimi, Y. Shimizu, Y. Ohno, Y. Nagai, J. Liang, N. Shigekawa

14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022)  2022.08  The Institute of Electronics, Information and Communication Engineers

Nano-structural and electro-thermal analyses of AlGaN/GaN/3C-SiC on diamond HEMTs prepared by bonding-first process International conference

R. Kagawa, K. Kawamura, Y. Sakaida，S. Ouchi，H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang

14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022)  2022.08  The Institute of Electronics, Information and Communication Engineers

Thermal Annealing Effect on the Structure of GaN/Diamond Bonding Interface International conference

Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

15th International Conference on New Diamond and Nano Carbons 2022 (NDNC 2022)  2022.06 

Fabrication and electrical characterization of n+-Si/p-diamond heterojunction diodes International conference

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

15th International Conference on New Diamond and Nano Carbons 2022 (NDNC 2022)  2022.06 

周波数変調型静電引力顕微鏡法によるキャリア密度の定量測定 Domestic conference

福澤 亮太, 梁 剣波, 重川 直輝, 高橋 琢二

2022年 第69回応用物理学会春季学術講演会  2022.03 

n+-Si/p-ダイヤモンドヘテロ接合ダイオードの作製と電気特性評価 Domestic conference

上東 洋太, 大曲 新矢, 梅沢 仁, 山田 英明, 梁 剣波, 重川 直輝

2022年 第69回応用物理学会春季学術講演会  2022.03 

ウェハ直接接合による自立基板上n-GaNエピ層/p-GaAs接合の光電流測定 Domestic conference

石見 翔太, 廣瀬 淳, 梁 剣波, 重川 直輝

2022年 第69回応用物理学会春季学術講演会  2022.03 

GaN/ダイヤモンド接合界面の特性評価 Domestic conference

梁 剣波, 清水 康雄, 大野 裕, 永井 康介, 重川 直輝

2022年 第69回応用物理学会春季学術講演会  2022.03 

Direct bonding of diamond for fabricating advanced electron devices Invited Domestic conference

Naoteru Shigekawa, Jianbo Liang

第1回ダイヤモンドデバイス国際ワークショップ  2022.02 

Research and development of high-thermal-tolerance interfaces fabricated using direct bonding of diamond Invited Domestic conference

Naoteru Shigekawa

2022.02 

表面活性化接合によるIII-V/Si界面創成及びその多接合太陽電池応用 Invited Domestic conference

重川直輝, 梁　剣波

日本太陽光発電学会次世代太陽電池セル・モジュール分科会2021年度第2回研究会  2022.01 

Fabrication and Characterization of GaN/Diamond bonding interface International conference

A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Ga₂O_3/3C-SiC direct bonding for efficient surface heat dissipation International conference

H. Nagai, K. Kawamura, Y. Sakaida, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates International conference

Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, Naoteru Shigekawa

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding International conference

Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Fabrication of beta-Ga₂O₃/Si direct bonding interface for high power device applications International conference

Jianbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Nanostructural Analysis of Al/beta-Ga₂O₃ Interface Fabricated Using Surface Activated Bonding International conference

Zexin Wan, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Fabrication of GaN/SiC/diamond structure for efficient thermal management of power devices International conference

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida，Sumito Ouchi，Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature International conference

Yutaka Ohno, Jianbo Liang, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

High temperature stability of p⁺-Si/p-diamond heterojunction diodes International conference

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

半導体異種材料接合の研究 Invited Domestic conference

重川　直輝

文部科学省ナノテクノロジープラットフォーム令和３年度利用成果発表会  2021.09 

Fabrication and Structural Characterization of Ga₂O₃/Si Heterostructure Domestic conference

Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

The 82nd JSAP Autumn Meeting 2021  2021.09 

Evaluation of thermal stability of Si/diamond heterojunction diodes Domestic conference

Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

The 82nd JSAP Autumn Meeting 2021  2021.09 

Noncontact resistance force microscopy using external modulation of joule heating Domestic conference

Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa, Takuji Takahashi

The 82nd JSAP Autumn Meeting 2021  2021.09 

Modification of solar cell characteristics by depositing semiconductor nanoparticle films with high optical density Domestic conference

K. Awai, Y. Idutsu, J. Liang, H. Nishimura, D.G. Kim, Y.G Shim, N. Shigekawa

The 82nd JSAP Autumn Meeting 2021  2021.09 

Direct bonding of diamond to semiconductors and metals for low thermal resistance modules Invited International conference

Naoteru Shigekawa, Jianbo Liang

International Conference on Diamond and Carbon Materials 2021  2021.09 

III-V compound semiconductor/Si hybrid tandem solar cells Invited Domestic conference

Naoteru Shigekawa

2021.06 

Low-temperature direct wafer bonding innovating CS device technologies Invited International conference

Naoteru Shigekawa, Jianbo Liang

International Conference on Compound Semiconductor Manufacturing Technology  2021.05 

表面活性化接合法によるダイヤモンド/Si ヘテロ接合ダイオードの作製 Domestic conference

上東 洋太、大曲 新矢、梅沢 仁、山田 英明、梁 剣波、重川 直輝

2021年 第68回応用物理学会春季学術講演会  2021.03 

ラマン分光法によるGaN/ダイヤモンド接合界面の残留応力評価 Domestic conference

小林 礼佳、清水 康雄、大野 裕、金 聖祐、小山 浩司、嘉数 誠、重川 直輝、梁 剣波

2021年 第68回応用物理学会春季学術講演会  2021.03 

波長変換ナノ粒子ZnSe/ZnS:Mn/ZnSの付加による太陽電池特性の向上 II Domestic conference

西村 悠陽、前川 貴哉、高木 知己、祖父江 進、川井 正一、重川 直輝、金 大貴

2021年 第68回応用物理学会春季学術講演会  2021.03 

二重バイアス変調静電引力顕微鏡による直接貼り合わせp-n接合の断面解析 Domestic conference

福澤 亮太、梁 剣波、重川 直輝、高橋 琢二

2021年 第68回応用物理学会春季学術講演会  2021.03 

表面活性化法による異種半導体直接接合界面の電気特性と太陽電池応用 Invited Domestic conference

重川　直輝

第5回 3次元積層半導体量子イメージセンサ研究会（TIA連携プログラム探索推進事業「かけはし」：「究極の広帯域量子イメージセンサ実現を目指して」グループ）  2021.02 

Microscopic Picture of Direct Bonding Via Surface Activation for Low-Resistance Si/Wide-Gap Semiconductor Heterointerface International conference

Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, Y. Nagai

ECS PRiME 2020  2020.10 

Direct Bonding of GaAs and Diamond for High Power Device Applications International conference

J. Liang, Y. Nakamura, Y. Ohno, Y. Shimizu, T. Zhan, T. Watanabe, N. Kamiuchi, Y. Nagai, N. Shigekawa

ECS PRiME 2020  2020.10 

III-V Thin-Film Solar Cells Bonded to Si Substrates via Metal Grids International conference

T. Hishida, J. Liang, N. Shigekawa

ECS PRiME 2020  2020.10 

Nanostructural Investigation on GaAs//Indium Tin Oxide/Si Junctions for III-V-on-Si Hybrid Multijunction Cells International conference

T. Hara, J. Liang, K. Araki, T. Kamioka, H. Sodabanlu, K. Watanabe, M. Sugiyama, N. Shigekawa

ECS PRiME 2020  2020.10 

低温FIB-断面STEM法によるSi/Diamond表面活性化接合界面の構造評価 Domestic conference

大野 裕、梁 剣波、吉田 秀人、清水 康雄、永井 康介、重川 直輝

2020年第81回応用物理学会秋季学術講演会  2020.09 

ラマン分光法によるGa2O3ショットキーバリアダイオードの自己発熱評価 Domestic conference

6. 万 澤欣、高月 大輝、林 家弘、梁 剣波、東脇 正高、重川 直輝

2020年第81回応用物理学会秋季学術講演会  2020.09 

Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped International conference

Y.Idutsu, J.Liang, H.Nishimura, D.G.Kim, N.Shigekawa

ECS PRiME 2020  2020.06 

Ga2O3/3C-SiC接合界面の作製及び特性評価 Domestic conference

梁 剣波, 清水 康雄, 大野 裕, 重川 直輝

2020年 第67回応用物理学会春季学術講演会  2020.03 

GaN/多結晶ダイヤモンド直接接合の作製及び特性評価 Domestic conference

小林 礼佳, 清水 康雄, 大野 裕, 金 聖祐, 小山 浩司, 嘉数 誠, 重川 直輝, 梁 剣波

2020年 第67回応用物理学会春季学術講演会  2020.03 

自立基板上GaNエピ層/GaAs直接接合界面のナノ構造評価 Domestic conference

廣瀬 淳, 清水 康雄, 大野 裕, 梁 剣波, 重川 直輝

2020年 第67回応用物理学会春季学術講演会  2020.03 

Si太陽電池に対するZnSe/ZnS:Mn/ZnS core/shellナノ粒子の堆積効果 Domestic conference

井筒 由紀, 梁 剣波, 西村 悠陽, 金 大貴, 重川 直輝

2020年 第67回応用物理学会春季学術講演会  2020.03 

GaAs//Si Hybrid Double Junction Cells Fabricated by Direct Bonding of Epitaxially Lifted-Off GaAs Subcell Layers on PET Films International conference

Ryo Kozono, Jianbo Liang, Kentaroh Watanabe, Masakazu Sugiyama, Naoteru Shigekawa

29th International Photovoltaic Science and Engineering Conference  2019.11 

Si太陽電池に対するMnドープ半導体ナノ粒子の堆積効果 Domestic conference

井筒 由紀, 田中 駿, 梁 剣波, 楢崎 友城, 西村 悠陽, 金 大貴, 重川 直輝

2019年第80回応用物理学会秋季学術講演会  2019.09 

表面活性化接合で作成したSi/GaAs界面の低温FIB法による断面TEM評価 Domestic conference

大野 裕, 清水 康雄, 永井 康介, 麻生 亮太郎, 神内 真人, 吉田 秀人, 梁 剣波, 重川 直輝

2019年第80回応用物理学会秋季学術講演会  2019.09 

直接接合された表面実装型LEDパッケージにおける素子温度評価 Domestic conference

小丸 啓吾, 梁 剣波, 西尾 佳高, 重川 直輝

2019年第80回応用物理学会秋季学術講演会  2019.09 

ELO法及びSAB法によるGaAs/Si 2接合太陽電池の作製 Domestic conference

小園 亮, 梁 剣波, 渡辺 健太郎, 杉山 正和, 重川 直輝

2019年第80回応用物理学会秋季学術講演会  2019.09 

表面活性化接合で形成したSi/GaAs界面の低温FIB法によるアトムプローブ評価 Domestic conference

清水 康雄, 海老澤 直樹, 大野 裕, 梁 剣波, 重川 直輝, 永井 康介

2019年第80回応用物理学会秋季学術講演会  2019.09 

GaAs/Diamond直接接合の界面評価 Domestic conference

中村 祐志, 清水 康雄, 大野 裕, 詹 天卓, 山下 雄一郎, 白崎 謙次, 永井 康介, 渡邊 孝信, 嘉数 誠, 重川 直輝, 梁 剣波

2019年第80回応用物理学会秋季学術講演会  2019.09 

高出力パワーデバイス応用に向けたGaN/Diamond直接接合の作製 Domestic conference

梁 剣波, 清水 康雄, 大野 裕, 白崎 謙次, 永井 康介, 嘉数 誠, 金 聖祐, Kuball Martin, 重川 直輝

2019年第80回応用物理学会秋季学術講演会  2019.09 

InGaP/ITO 界面における熱処理効果 Domestic conference

崎原 盛偉, 梁 剣波, 重川 直輝

2019年第80回応用物理学会秋季学術講演会  2019.09 

Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications International conference

J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu, M. Kuball, and N. Shigekawa

13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)  2019.08 

Fabrication of GaAs/diamond direct bonding for high power device applications International conference

Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang

13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)  2019.08 

Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates International conference

Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

13th International Conference on Nitride Semiconductors 2019  2019.07 

Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature International conference

Jianbo Liang, Makoto Kasu, Martin Kuball, Naoteru Shigekawa

13th International Conference on Nitride Semiconductors 2019  2019.07 

Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells International conference

Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, and N.Shigekawa

46TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2019.06 

GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions International conference

Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

46TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2019.06 

Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions International conference

T. Hishida, J. Liang, and N. Shigekawa

2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding International conference

S. Horikawa, S. Morita, J. Liang, Y. Kaneko, Y. Nishio, M. Matsubara, H. Asahi, and N. Shigekawa

2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance International conference

M. Sakihara, J. Liang, and N. Shigekawa

2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

Fabrication of Diamond/Cu Direct Bonding for Power Device Application International conference

S. Kanda, S. Masuya, M. Kasu, N. Shigekawa, and J. Liang

2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

Effect of annealing temperature on diamond/Si interfacial structure International conference

J. Liang, Y. Zhou, S. Masuya ; F. Gucmann, M. Singh, J. Pomeroy, S. Kim, M. Kuball, M. Kasu, N. Shigekawa

2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS International conference

Z. Wan, J. Liang, and N. Shigekawa

2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

Direct bonding of diamond and Cu at room temperature for power device application International conference

Jianbo Liang, Naoteru Shigekawa, et al.

13th New Diamond and Nano Carbons Conference (NDNC 2019)  2019.05 

パワーデバイス応⽤に向けたダイヤモンド/Cu直接接合の形成 Domestic conference

梁 剣波, 神⽥ 進司, 桝⾕ 聡⼠, 嘉数 誠, 重川 直輝

2019年 第66回応用物理学会春季学術講演会  2019.03 

表⾯活性化接合によるGaAs/GaAs界⾯における元素分布評価 Domestic conference

清⽔ 康雄, 海⽼澤 直樹, ⼤野 裕, 梁 剣波, 重川 直輝, 井上 耕治, 永井 康介

2019年 第66回応用物理学会春季学術講演会  2019.03 

⾼出⼒デバイス応⽤に向けたGaAs/Diamond直接接合の作製 Domestic conference

中村 祐志, 桝⾕ 聡⼠, 嘉数 誠, 重川 直輝, 梁 剣波

2019年 第66回応用物理学会春季学術講演会  2019.03 

XPSによるSiC/Si接合界⾯の熱処理効果の評価 Domestic conference

万 澤欣, 梁 剣波, 重川 直輝

2019年 第66回応用物理学会春季学術講演会  2019.03 

Ⅲ-Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入(2) Domestic conference

菱⽥ 貴史, 梁 剣波, 重川 直輝

2019年 第66回応用物理学会春季学術講演会  2019.03 

表面活性化接合法によるAl箔/AlN接合の接合強度評価 Domestic conference

堀川昇太朗, 森田匠, 梁剣波, 兼子佳久, 西尾佳高, 松原萌子, 旭洋, 重川直輝

2019年 第66回応用物理学会春季学術講演会  2019.03 

Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates Invited Domestic conference

K. Matsuura, J. Liang, K. Maezawa, and N. Shigekawa

第18回 関西コロキアム電子デバイスワークショップ  2019.01 

TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding International conference

Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

International Workshop on Nitride Semiconductors (IWN 2018)  2018.11 

p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interfaces for high thermal tolerance International conference

Shunichi Kono, Jianbo Liang, Naoteru Shigekawa

International Workshop on Nitride Semiconductors (IWN 2018)  2018.11 

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding International conference

S. Morita, J. Liang, N. Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AIMES2018)  2018.09 

Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding International conference

J. Liang, Y. Zhou, S. Yamajo, M. Arai, M. Kuball, N. Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AIMES2018)  2018.09 

Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature International conference

Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa

Americas International Meeting on Electrochemistry and Solid State Science (AIMES2018)  2018.09 

Si太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

田中 駿, 楢崎 友城, 梁 剣波, 金 大貴, 重川 直輝

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線電子分光評価 Domestic conference

原 智也, 梁 剣波, 荒木 健次, 神岡 武文, ソダーバンル ハッサネット, 渡辺 健太郎, 杉山 正和, 重川 直輝

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

表面活性化接合及び犠牲層エッチングによるGaAs/Si 2接合太陽電池の作製 Domestic conference

小園 亮, 尹 翔至, 梁 剣波, 重川 直輝

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

III-V族/Si太陽電池の界面特性改善に向けた パターニング金属中間層の導入 Domestic conference

菱田 貴史, 梁 剣波, 重川 直輝

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

Ar 高速原子ビームのスパッタリング効果を用いたpolyimide/Al 接合の実現 Domestic conference

赤澤 秀征, 梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

松本 祐二, 梁 剣波, 重川 直輝

2018年第79回応⽤物理学会秋季学術講演会  2018.09 

金属箔直接接合による低損失インダクタのRF特性評価 Domestic conference

松浦圭汰, 梁　剣波, 前澤宏一, 重川直輝

2018年電子情報通信学会ソサイエティ大会  2018.09 

Fabrication of Si//patterned metal layer/Si junctions for hybrid multijunction solar cells with improved bonding interface properties International conference

T. Hishida, J. Liang, N. Shigekawa

2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018)  2018.06 

Dependence of characteristics of directly-bonded SiC/Si junctions on bonding temperature International conference

K. Shimozato, J. Liang, M. Arai, N. Shigekawa

2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018)  2018.06 

Penetration depth of effects of irradiation of Ar fast atom beams in n-Si surfaces International conference

Y. Matsumoto, S. Hisamoto, J. Liang, N. Shigekawa

2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018)  2018.06 

Room-Temperature Direct Bonding of Diamond to Aluminum International conference

Jianbo Liang, Shoji Yamajo, Martin Kuball, Naoteru Shigekawa

New Diamond and Nano Carbons Conference (NDNC 2018)  2018.05 

Hybrid heterostructures and heterostructure devices fabricated by surface activated bonding technologies Invited International conference

Naoteru Shigekawa

The 42nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2018)  2018.05 

Interfacial strength and fracture toughness in integrated semiconductor materials International conference

Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, Martin Kuball

2018 International Conference on Compound Semiconductor Manufacturing Technologies  2018.05 

Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価 Domestic conference

梁 剣波, Zhou Yan, Singh Manikant, Gucmann Filip, Pomeroy James, Kuball Martin, 重川 直輝

第65回応用物理学会 春季学術講演会  2018.03 

p⁺-Siをゲート電極とする高耐熱AlGaN/GaN HEMTの作製 Domestic conference

鴻野 駿一, 梁 剣波, 重川 直輝

第65回応用物理学会 春季学術講演会  2018.03 

p⁺-Siをゲート電極とする高耐熱AlGaN/GaN HEMTの作製 Domestic conference

鴻野 駿一, 梁 剣波, 重川 直輝

第65回応用物理学会 春季学術講演会  2018.03 

直接接合によるSiC/Si 界面特性の熱処理温度依存性 Domestic conference

下里 和史, 梁 剣波, 新井 学, 重川 直輝

第65回応用物理学会 春季学術講演会  2018.03 

Application of surface-activated bonding technologies for III-V-on-Si hybrid multijunction cells Invited International conference

Naoteru Shigekawa

EMN Singapore Meeting 2018  2018.01 

表面活性化接合法によるＩＩＩ－Ｖ－ｏｎ－Ｓｉタンデム太陽電池 Invited Domestic conference

重川直輝

学振第175 委員会 次世代シリコン太陽電池分科会 超高効率太陽電池分科会  2017.12 

表面活性化による異種半導体接合技術とその応用 Invited Domestic conference

重川直輝

日本学術振興会　第１３１委員会  2017.12 

Annealing effects on GaAs/ITO/Si junctions fabricated by surface-activated bonding International conference

Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa

27th International Photovoltaic Science and Engineering Conference  2017.11 

GaAs single junction cells on Si substrates fabricated by surface activated bonding and etching of sacrificial layers International conference

Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

27th International Photovoltaic Science and Engineering Conference  2017.11 

Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates International conference

K. Matsuura, J. Liang, K. Maezawa, N. Shigekawa

2017 International Conference on Solid State Devices and Materials  2017.09 

Impacts of annealing on interfaces of Al foil/Si junctions by using surface activated bonding International conference

K. Furuna, J. Liang, M. Matsubara, D. Marwan, Y. Nishio, N. Shigekawa

2017 International Conference on Solid State Devices and Materials  2017.09 

Si基板と接合した単結晶ダイヤモンドの残留応力評価 Domestic conference

梁　剣波, 重川　直輝, 他

第７８回応用物理学会秋季学術講演会  2017.09 

GaAs/GaN接合を用いたnpn構造の光電流測定 Domestic conference

山條　翔二, 梁　剣波, ソダーバンル　ハッサネット, 渡辺　健太郎, 杉山　正和, 重川　直輝

第７８回応用物理学会秋季学術講演会  2017.09 

ITOを中間層とするInGaP/GaAs/ITO/Si３接合太陽電池の特性評価 Domestic conference

原　智也, 小川　智輝, 梁　剣波, 荒木　健次, 神岡　武文, 山口　真史, 重川　直輝

第７８回応用物理学会秋季学術講演会  2017.09 

室温表面活性化接合で作成したSi/GaAs界面の熱処理による構造変化 Domestic conference

大野　裕, 吉田　秀人, 竹田　精治, 梁　剣波, 重川　直輝

第７８回応用物理学会秋季学術講演会  2017.09 

Si太陽電池特性に対する半導体ナノ粒子の堆積効果 Domestic conference

田中　駿, 浅川　良介, 小川　智輝, 楢崎　友城, 梁　剣波, 金　大貴, 重川　直輝

第７８回応用物理学会秋季学術講演会  2017.09 

犠牲層エッチングによるIII-V族薄層/Si接合の形成 Domestic conference

尹　翔至, 梁　剣波, 重川　直輝

第７８回応用物理学会秋季学術講演会  2017.09 

Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI International conference

Jianbo Liang, Naoteru Shigekawa,他

12th Topical Workshop on Heterostructure Microelectronics  2017.08 

Formation of contacts with high thermal tolerance by using Si/GaN junctions International conference

Jianbo Liang, Takuya Nishimura, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, Naoteru Shigekawa

12th International Conference on Nitride Semiconductors  2017.07 

Measurements of Potentials at Tap Contacts and Estimation of Resistance across Bonding Interfaces in InGaP/GaAs/Si Hybrid Triple-Junction Cells International conference

Naoteru Shigekawa, Jianbo Liang

2017 IEEE Photovoltaic Specialists Conference  2017.06 

InGaP/GaAs/ITO/Si Hybrid Triple-Junction Cells with GaAs/ITO Bonding Interfaces International conference

Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takafumi Kamioka, Kenji Araki, Masafumi Yamaguchi

2017 IEEE Photovoltaic Specialists Conference  2017.06 

Analysis of the Influence of Interface Charges on the Electrical Characteristics of GaAs/GaN Junctions International conference

7.S. Yamajo, J. Liang, N. Shigekawa

2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

Transport Characteristics of Optically-Excited and Electrically-Injected Minority Electrons Across p-Si/n-SiC Hetero-Interfaces International conference

Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, Manabu Arai

2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

Electrical Conduction of Si/ITO/Si Junctions Fabricated by Surface Activated Bonding International conference

Jianbo Liang, Tomoki Ogawa, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa

2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

Impacts of Bonding-Layer Resistance of Si Bottom Cells on Interface Resistance In InGaP/GaAs/Si Hybrid Triple-Junction Cells International conference

Naoteru Shigekawa, Jianbo Liang

2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding International conference

S. Morita, J. Liang, M. Matsubara, M. Dhamrin, Y. Nishio, N. Shigekawa

2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

Plane-View Transmission Electron Microscopy of Si/GaAs Interfaces Fabricated by Surface-Activated Bonding at Room Temperature International conference

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Liang Jianbo, Naoteru Shigekawa

2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells Invited International conference

Naoteru Shigekawa, Jianbo Liang

2018 International Conference on Electronics Packaging  2017.04 

Electrical Characterisation of Coupling Properties in InGaP/GaAs/Si Triple-Junction Cells International conference

26th International Photovoltaic Science and Engineering Conference  2016.10 

Effects of Ar beam irradiation on Si-based Schottky contacts Domestic conference

IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

Effects of layered CdTe nano particles on Si solar cells Domestic conference

IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

Electrical characteristics of Al foil/Si junctions by surface activated bonding method Domestic conference

IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

Electrical characteristics of SAB-Based n+-n Ge/4H-SiC heterojunctions Domestic conference

IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

GaN 基板上InGaN/GaN MQW 太陽電池における井戸層厚と太陽電池特性 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

Si 基板上GaAs/GaN ヘテロ接合の縦方向電気特性評価 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

GaN/Ga2O3 基板およびGaN 基板に成長したInGaN/GaN MQW 太陽電池特性 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

“NH3分解触媒援用MOVPE成長InxGa1-xN(x~0.35)のMgドーピング挙動 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

表面活性化ボンディング法によるAl箔/Si接合の電気特性評価 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

熱処理による4H-SiC/Si HBTの電気特性の改善 Domestic conference

-

第63回応用物理学会春季学術講演会  2016.03 

III-V-on-Si hybrid tandem cells by room-temperature surface-activated bonding International conference

EMN Meeting on Photovoltaic 2016  2016.01 

Low-resistivity InxGa1-xN (x=0~0.35) grown by low-temperature (≲ 600˚C) MOVPE using NH3 decomposition catalysts Domestic conference

6th International Symposium on Growth of III-Nitrides  2015.11 

表面活性化ボンディング法に依るSi/SiC接合の電気特性 Domestic conference

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電子情報通信学会電子デバイス研究会  2015.11 

GaAs/GaAs接合の電気特性に対するアニール効果 Domestic conference

-

電子情報通信学会電子デバイス研究会  2015.11 

NH3 decomposition catalyst-assisted MOVPE growth of In0.3Ga0.7N for solar cell application International conference

PVSEC-25  2015.11 

Migration-enhanced, low-temperature (~400˚C) MOVPE growth of InN using NH3 decomposition catalysts Domestic conference

6th International Symposium on Growth of III-Nitrides  2015.11 

常温接合法によるGaAs/4H-SiCヘテロ接合作製及び電気特性評価 Domestic conference

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2015年 第76回応用物理学会秋季学術講演会  2015.09 

界面顕微光応答法によるSi/SiCヘテロp-n接合の2次元評価 Domestic conference

-

2015年 第76回応用物理学会秋季学術講演会  2015.09 

GaAs/GaAs接合界面の電気特性に対するアニール効果の抽出の試み Domestic conference

-

2015年 第76回応用物理学会秋季学術講演会  2015.09 

表面活性化接合によるp-Si/n-GaN接合の電気特性評価 Domestic conference

-

2015年 第76回応用物理学会秋季学術講演会  2015.09 

多接合太陽電池のボトムセル応用のためのSi逆ピラミッド構造の検討 Domestic conference

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2015年 第76回応用物理学会秋季学術講演会  2015.09 

NH3分解触媒援用MOVPE法によるInN系材料の低温(～400℃)成長(Ⅱ): InxGa1-xN(x~0.3)の成長 Domestic conference

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2015年 第76回応用物理学会秋季学術講演会  2015.09 

NH3分解触媒援用MOVPE法によるInN系材料の低温(～400℃)成長(Ⅰ): InN成長 Domestic conference

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2015年 第76回応用物理学会秋季学術講演会  2015.09 

Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by Surface Activated Bonding Domestic conference

2015 International Conference on Solid State Devices and Materials  2015.09 

Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy Domestic conference

2015 International Conference on Solid State Devices and Materials  2015.09 

Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding Domestic conference

2015 International Conference on Solid State Devices and Materials  2015.09 

GaN/Ga2O3テンプレート基板上に成長したInGaN/GaN MQW太陽電池構造 Domestic conference

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2015年 第76回応用物理学会秋季学術講演会  2015.09 

Electrical Properties of Room Temperature Bonded Si/GaN Heterojunctions without Buffer Layers International conference

11th International Conference on Nitride Semiconductors  2015.09 

MOVPE Growth and Device Fabrication of Thick N+-P InGaN with in Composition of 0.3 and No Phase Separation at 600 ºC International conference

11th International Conference on Nitride Semiconductors  2015.09 

Fabrication and characterization of GaAs/4H-SiC junctions by using SAB Domestic conference

11th Topical Workshop on Heterostructure Microelectronics  2015.08 

Band lineups in GaAs/GaN junctions using surfaceactivated bonding Domestic conference

11th Topical Workshop on Heterostructure Microelectronics  2015.08 

Impacts of annealing in N2/H2 ambient on electrical properties of Si/GaN junctions Domestic conference

11th Topical Workshop on Heterostructure Microelectronics  2015.08 

Surface-activated bonding of n+-Si to n-GaN: A possible process for fabricating ohmic contacts to nitrides with smooth surface International conference

39th Workshop on Compound Semiconductor Devices and Integrated Circuits  2015.06 

Impacts of optical properties of anti-reflection coatings on characteristics of InGaP/GaAs/Si hybrid triple-junction cells International conference

42nd IEEE International Photovoltaic Specialists Conference  2015.06 

Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding Domestic conference

The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

Interface characteristics of Si/Si junctions by using surface-activated bonding Domestic conference

The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

Electrical properties of n+-Si/n-GaN junctions by room temperature bonding Domestic conference

The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

Electrical characterization of GaAs/GaAs bonding interfaces Domestic conference

The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

SAB 法による4H-SiC/Si　HBT構造における少数キャリア注入特性 Domestic conference

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2015 年第62 回応用物理学会春季学術講演会  2015.03 

MOVPE 法によるn+-p 構造InxGa1-xN (x~0.3)光起電力素子の作製 Domestic conference

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第62 回応用物理学会春季学術講演会  2015.03 

タンデム太陽電池応用のためのSi/InGaP ヘテロ接合の電気伝導特性 Domestic conference

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2015 年第62 回応用物理学会春季学術講演会  2015.03 

AR 膜によるInGaP/GaAs/Si 3 接合セル中サブセル特性の制御 Domestic conference

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2015 年第62 回応用物理学会春季学術講演会  2015.03 

表面活性化接合によるn+-Si/n-GaN コンタクトの検討 Domestic conference

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2015 年第62 回応用物理学会春季学術講演会  2015.03 

SAB 法によるSi/Si 接合の界面特性の評価 Domestic conference

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2015 年第62 回応用物理学会春季学術講演会  2015.03 

MOVPE 成長InGaN 厚膜における相分離の臨界膜厚 Domestic conference

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電子情報通信学会電子デバイス研究会  2014.11