Updated on 2023/03/29

写真a

 
SHIGEKAWA Naoteru
 
Organization
Graduate School of Engineering Division of Physics and Electronics Professor
School of Engineering Department of Physics and Electronics
Title
Professor
Affiliation
Institute of Engineering
Affiliation campus
Sugimoto Campus

Position

  • Graduate School of Engineering Division of Physics and Electronics 

    Professor  2022.04 - Now

  • School of Engineering Department of Physics and Electronics 

    Professor  2022.04 - Now

Degree

  • 博士(理) ( The University of Tokyo )

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Research Interests

  • Direct bonding of foreign materials

  • Semiconductor heterojunction

  • carrier transport properties

  • surface activated bonding

  • semiconductor heterostructures

  • widegap semiconductors

Research subject summary

  • Dissimilar materials such as semiconductors, metal, ceramics are directly bonded. Physical properties of bonding interfaces are investigated. Novel functional devices based on such directly-bonding-based junctions are explored.

Research Career

  • Heterogeneous-integrated tandem solar cells on Si substrates

    green power devices, high efficiency solar cells, power electronics  Joint Research in Japan

    2011.10 - Now 

  • Low-loss interconnects by direct bonding of thick metal layers

    green power devices, power electronics, monolithic integration  Joint Research in Japan

    2011.10 - Now 

  • Heterojunction and heterojunction devices fabricated by direct bonding of widegap semiconductors

    green power devices, power electronics  Joint Research in Japan

    2011.10 - Now 

Professional Memberships

  • 応用物理学会

      Domestic

  • 日本物理学会

      Domestic

  • 電子情報通信学会

      Domestic

  • 電気学会

      Domestic

  • IEEE

      Overseas

  • Institute of Physics

      Overseas

  • IEEE

  • 電気学会

  • 電子情報通信学会

  • Institute of Physics

  • 応用物理学会

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Committee Memberships (off-campus)

  • 接合界面創成研究会 幹事   一般社団法人電子実装工学研究所  

    2021.04 - Now 

  • Associate Editor   IEE Electronics Letters  

    2016.07 - 2020.05 

  • 幹事   日本学術振興会産学協力研究委員会 接合界面創成技術第191委員会  

    2015.10 - 2021.03 

Awards

  • Silver Young Scholar Award

    Yota Uehigashi

    2022.06   15th International Conference on New Diamond and Nano Carbons 2022   Fabrication and electrical characterization of n+-Si/p-diamond heterojunction diodes

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    Country:Japan

  • The 2nd Diamond Related Young Researchers Meeting, Presentation Award, Silver

    Yota Uehigashi

    2021.11   New Diamond Forum  

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    Country:Japan

  • Best Presentation Award, 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

    J. Liang, D. Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa

    2021.10   The Organizing Committee of 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Fabrication of Ga2O3/Si direct bonding interface for high power device applications

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    Country:Japan

  • Best Student Presentation Award, 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

    R. Kagawa, K. Kawamura, Y. Sakaida, S. Ouchi, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang

    2021.10   The Organizing Committee of 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)   Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device

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    Country:Japan

  • APEX/JJAP編集貢献賞

    2017.03  

  • APEX/JJAP編集貢献賞

    2017.03  

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    Country:Japan

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Papers

  • Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol-gel glass films Reviewed

    Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa

    Japanese Journal of Applied Physics   62 ( SK )   SK1005-1 - SK1005-7   2023.03( ISSN:00214922

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    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/acc03e

  • Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures Reviewed International coauthorship

    Yan Zhou, Shi Zhou, Shun Wan, Bo Zou, Yuxia Feng, Rui Mei, Heng Wu, Naoteru Shigekawa, Jianbo Liang, Pingheng Tan, Martin Kuball

    122 ( 8 )   082103-1 - 082103-6   2023.02( ISSN:00036951

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1063/5.0135138

  • Room-temperature bonding of GaN and diamond via a SiC layer Reviewed

    Ayaka Kobayashi, Hazuki Tomiyama, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

    Functional Diamond   2 ( 1 )   142 - 150   2022.12

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    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1080/26941112.2022.2145508

  • Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding Reviewed

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

    Diamond and Related Materials   130   109425-1 - 109425-8   2022.12( ISSN:09259635

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    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1016/j.diamond.2022.109425

  • High thermal conductivity in wafer-scale cubic silicon carbide crystals Reviewed International coauthorship

    Zhe Cheng, Jianbo Liang, Keisuke Kawamura, Hao Zhou, Hidetoshi Asamura, Hiroki Uratani, Janak Tiwari, Samuel Graham, Yutaka Ohno, Yasuyoshi Nagai, Tianli Feng, Naoteru Shigekawa, David G. Cahill

    Nature Communications   13   7201-1 - 7201-9   2022.11

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    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1038/s41467-022-34943-w

  • Heterojunctions fabricated by surface activated bonding—dependence of their nanostructural and electrical characteristics on thermal process Invited Reviewed

    Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

    Japanese Journal of Applied Physics   61 ( 12 )   120101-1 - 120101-19   2022.11

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    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac993f

  • Quantitative capacitance measurements in frequency modulation electrostatic force microscopy Reviewed

    Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa, Takuji Takahashi

    Japanese Journal of Applied Physics   61 ( SL )   SL1005-1 - SL1005-7   2022.09( ISSN:00214922

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac5fb9

  • Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates Reviewed

    Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, Naoteru Shigekawa

    Japanese Journal of Applied Physics   61 ( SF )   SF1008-1 - SF1008-4   2022.06( ISSN:00214922

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    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac629a

  • Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications Reviewed

    Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    61 ( SF )   SF1001-1 - SF1001-7   2022.06( ISSN:00214922

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac4c6c

  • Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding Reviewed

    Y. Ohno, J. Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa

    61 ( SF )   SF1006-1 - SF1006-5   2022.06( ISSN:00214922

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac5d11

  • Intrinsic luminescence-downshifting effects of Zn-based Mn-doped nanoparticle layers on Si solar cells Reviewed

    Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa

    Japanese Journal of Applied Physics   61 ( 6 )   062004-1 - 062004-6   2022.05( ISSN:00214922

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    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac5fc8

  • Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes Reviewed

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

    Japanese Journal of Applied Physics   61 ( SF )   SF1009-1 - SF1009-9   2022.04( ISSN:00214922

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    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.35848/1347-4065/ac6480

  • AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process Reviewed

    Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa

    Applied Physics Express   15 ( 4 )   041003-1 - 041003-5   2022.03( ISSN:18820778

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    Authorship:Last author, Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.35848/1882-0786/ac5ba7

  • Fabrication of n-Si/n-Ga<inf>2</inf>O<inf>3</inf> heterojunctions by surface-activated bonding and their electrical properties Reviewed

    Wang Z.

    Journal of Applied Physics   131 ( 7 )   2022.02( ISSN:00218979

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    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1063/5.0080734

  • Fabrication of p(+)-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties Reviewed

    Uehigashi Yota, Ohmagari Shinya, Umezawa Hitoshi, Yamada Hideaki, Liang Jianbo, Shigekawa Naoteru

    DIAMOND AND RELATED MATERIALS   120   2021.12( ISSN:0925-9635

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.diamond.2021.108665

  • Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design Reviewed

    Liang Jianbo, Kobayashi Ayaka, Shimizu Yasuo, Ohno Yutaka, Kim Seong-Woo, Koyama Koji, Kasu Makoto, Nagai Yasuyoshi, Shigekawa Naoteru

    ADVANCED MATERIALS   33 ( 43 )   2021.10( ISSN:0935-9648

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.202104564

  • Room temperature direct bonding of diamond and InGaP in atmospheric air Reviewed International coauthorship

    Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Hongxing Wang, Naoteru Shigekawa

    Functional Diamond   1 ( 1 )   110 - 116   2021.02

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

    DOI: 10.1080/26941112.2020.1869435

  • Water-soluble ZnSe/ZnS:Mn/ZnS quantum dots convert UV to visible light for improved Si solar cell efficiency Reviewed

    Nishimura Hisaaki, Maekawa Takaya, Enomoto Kazushi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Kim DaeGwi

    JOURNAL OF MATERIALS CHEMISTRY C   9 ( 2 )   693 - 701   2021.01( ISSN:2050-7526

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

    DOI: 10.1039/d0tc04580b

  • Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications Reviewed

    Liang Jianbo, Nakamura Yuji, Zhan Tianzhuo, Ohno Yutaka, Shimizu Yasuo, Katayama Kazu, Watanabe Takanobu, Yoshida Hideto, Nagai Yasuyoshi, Wang Hongxing, Kasu Makoto, Shigekawa Naoteru

    DIAMOND AND RELATED MATERIALS   111   2021.01( ISSN:0925-9635

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.diamond.2020.108207

  • Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces Reviewed

    Ohno Yutaka, Liang Jianbo, Shigekawa Naoteru, Yoshida Hideto, Takeda Seiji, Miyagawa Reina, Shimizu Yasuo, Nagai Yasuyoshi

    APPLIED SURFACE SCIENCE   525   2020.09( ISSN:0169-4332

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2020.146610

  • III-V Thin Film Solar Cells Bonded to Si Substrates via Metal Grids Reviewed

    T. Hishida, J. Liang, N. Shigekawa

    ECS Transaction   98 ( 4 )   117 - 123   2020.09

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    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1149/09804.0117ecst

  • Nanostructural Investigation on GaAs//Indium Tin Oxide/Si Junctions for III-V-on-Si Hybrid Multijunction Cells Reviewed

    4. T. Hara, J. Liang, K. Araki, T. Kamioka, H. Sodabanlu, K. Wanatabe, M. Sugiyama, N. Shigekawa

    ECS Transaction   98 ( 4 )   125 - 133   2020.09

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    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1149/09804.0125ecst

  • Low Temperature Direct Bonding Technologies of Semiconductor Substrates Invited Reviewed

    Naoteru Shigekawa, Jianbo Liang

    The IEICE Transactions on Electronics (Japanese Edition)   J103-C ( 7 )   341 - 348   2020.07

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped Reviewed

    Y. Idutsu, J.Liang, H.Nishimura, D.G.Kim, N.Shigekawa

    Proceedings, 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC)   234 - 237   2020.05

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    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1109/PVSC45281.2020.9300637

  • Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells Reviewed

    Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang, Akira Yasui

    Solar Energy Materials and Solar Cells   2020.03

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    Authorship:Lead author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1016/j.solmat.2020.110501

  • Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management Reviewed

    Jianbo Liang, Yutaka Ohno, Yuichiro Yamashita, Yasuo Shimizu, Shinji Kanda, Naoto Kamiuchi, Seongwoo Kim, Koyama Koji, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa

    ACS Applied Nano Materials   2020.02

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    Authorship:Last author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1021/acsanm.9b02558

  • GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions Reviewed

    Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    Proceedings 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019   1018 - 1020   2020.02

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    Authorship:Corresponding author   Publishing type:Research paper (international conference proceedings)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1109/PVSC40753.2019.8980757

  • Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells Reviewed

    Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, N.Shigekawa

    Proceedings 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Chicago, IL, USA, 2019   1753 - 1755   2020.02

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    Authorship:Corresponding author   Publishing type:Research paper (international conference proceedings)   Kind of work:Joint Work  

    DOI: 10.1109/PVSC40753.2019.8981279

  • Low Temperature Bonding for 3D Integration Invited Reviewed

    Shigekawa N.

    Japanese Journal of Applied Physics   59 ( SB )   2020.02( ISSN:00214922

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    Authorship:Lead author, Last author, Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.7567/1347-4065/ab6207

  • Fabrication of diamond/Cu direct bonding for power device applications Reviewed

    Shinji Kanda, Yasuo Shimizu, Yutaka Ohno, Kenji Shirasaki, Yasuyoshi Nagai, Makoto Kasu, Naoteru Shigekawa, and Jianbo Liang

    Japanese Journal of Applied Physics   2019.10

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:Domestic journal  

    DOI: 10.7567/1347-4065/ab4f19

  • Low-resistance semiconductor/semiconductor junctions with intermediate metal grids for III-V-on-Si multijunction solar cells Reviewed

    Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   2019.10

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:Domestic journal  

    DOI: 10.7567/1347-4065/ab4c8a

  • Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding Reviewed

    Yutaka Ohno, Hideto Yoshida, Naoto Kamiuchi, Ryotaro Aso, Seiji Takeda, Yasuo Shimizu, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   2019.10

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Synthesis of Mn-Doped ZnSe-ZnS Alloy Quantum Dots by a Hydrothermal Method Reviewed

    Nishimura Hisaaki, Lin Yuxin, Hizume Masayuki, Taniguchi Taichi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Okuno Eiichi, Kim DaeGwi

    公益社団法人 日本化学会 CHEMISTRY LETTERS   48 ( 9 )   1081 - 1083   2019.09( ISSN:0366-7022

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    Publishing type:Research paper (scientific journal)  

    <p>This study aims to report the hydrothermal synthesis of water-soluble Mn-doped ZnSe-ZnS alloy quantum dots (QDs), wherein manganese (Mn<sup>2+</sup>) serves as an emission center. The alloy composition was controlled by the mixing ratio of ZnSe:Mn and ZnS:Mn precursor solutions. The photoluminescence (PL) band originating from the <i>d</i>-<i>d</i> transition in Mn<sup>2+</sup> was clearly observed. With an increase in the amount of ZnS in the alloy QDs, the absorption onset energy shifted toward higher energy, demonstrating the successful preparation of alloy QDs, and Mn PL intensity increased as well.</p>

    DOI: 10.1246/cl.190365

    CiNii Article

  • Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies Reviewed

    Matsuura Keita, Liang Jianbo, Maezawa Koichi, Shigekawa Naoteru

    IEEE TRANSACTIONS ON ELECTRON DEVICES   66 ( 9 )   3946 - 3952   2019.09( ISSN:0018-9383

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1109/TED.2019.2928620

  • Annealing effect of surface-activated bonded diamond/Si interface Reviewed

    Liang Jianbo, Zhou Yan, Masuya Satoshi, Gucmann Filip, Singh Manikant, Pomeroy James, Kim Seongwoo, Kuball Martin, Kasu Makoto, Shigekawa Naoteru

    DIAMOND AND RELATED MATERIALS   93   187 - 192   2019.03( ISSN:0925-9635

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.diamond.2019.02.015

  • Hydrothermal synthesis of ZnSe:Mn quantum dots and their optical properties Reviewed

    Nishimura Hisaaki, Lin Yuxin, Hizume Masayuki, Taniguchi Taichi, Shigekawa Naoteru, Takagi Tomomi, Sobue Susumu, Kawai Shoichi, Okuno Eiichi, Kim DaeGwi

    AIP ADVANCES   9 ( 2 )   2019.02( ISSN:2158-3226

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5085814

  • Room-temperature direct bonding of diamond and Al Reviewed

    Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa

    Scripta Mater.   159   58 - 61   2019.01( ISSN:1359-6462

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.scriptamat.2018.09.016

  • Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding Reviewed

    Yamajo Shoji, Yoon Sanji, Liang Jianbo, Sodabanlu Hassanet, Watanabe Kentaro, Sugiyama Masakazu, Yasui Akira, Ikenaga Eiji, Shigekawa Naoteru

    APPLIED SURFACE SCIENCE, Elsevier   473   627 - 632   2018.12( ISSN:0169-4332

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work   International / domestic magazine:International journal  

    DOI: 10.1016/j.apsusc.2018.12.199

  • Stability of diamond/Si bonding interface during device fabrication process Reviewed

    Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, Naoteru Shigekawa

    Applied Physics Express, Japan Society of Applied Physics   12   016501-1 - 016501-5   2018.11

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

    DOI: 10.7567/1882-0786/aaeedd

  • Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding Reviewed

    S. Morita, J. Liang, and N. Shigekawa

    ECS Trans   86 ( 5 )   137 - 142   2018.10

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    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1149/08605.0137ecst

  • Electrical properties of GaAs//indium tin oxide/Si junctions for III-V-on-Si hybrid multijunction cells Reviewed

    Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, and Naoteru Shigekawa

    57 ( 8 )   08RD05-1 - 08RD05-6   2018.08( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.08RD05

    CiNii Article

  • GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance Reviewed

    Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takefumi Kamioka, Kenji Araki, and Masafumi Yamaguchi

    IEEE Journal of Photovoltaics   8 ( 3 )   879 - 886   2018.05( ISSN:2156-3381

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/JPHOTOV.2018.2802203

  • Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces Reviewed

    Shigekawa Naoteru, Shimizu Sae, Liang Jianbo, Shingo Masato, Shiojima Kenji, Arai Manabu

    Institute of Physics JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE04-1 - 02BE04-5   2018.02( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

    We investigate the transport properties of minority electrons across p-Si/n-4H-SiC interfaces fabricated using surface activated bonding. The transport properties along each direction are examined by measuring the photoresponse (PR) of p-Si/n-4H-SiC heterojunctions and characterizing 4H-SiC/Si heterojunction bipolar transistors (HBTs). The photoyield obtained in PR measurements is sensitive to the concentration of acceptors in p-Si and reverse-bias voltages, which indicates that the energy of optically excited electrons in p-Si is first relaxed and then they are driven to n-SiC through the tunneling process. By the postprocess annealing of HBTs, the properties of emitter/base interfaces are improved so that the current gain is drastically increased, which means that the Si/4H-SiC interfaces are in metastable states when the device process is completed. A maximum current gain of >10 is demonstrated.

    DOI: 10.7567/JJAP.57.02BE04

    CiNii Article

  • Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions Reviewed

    Yamajo Shoji, Liang Jianbo, Shigekawa Naoteru

    Institute of Physics JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE02-1 - 02BE02-5   2018.02( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

    Electrical properties of p<sup>+</sup>-GaAs/n-GaN and n<sup>+</sup>-GaAs/n-GaN junctions fabricated by surface-activated bonding are investigated by measuring their capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The difference between their flat-band voltages (0.17 eV), which are extracted from C–V measurements, disagrees with the ideal value (1.52 V), suggesting that the Fermi level should be pinned at the bonding interface. The C–V characteristics of the two junctions are calculated by assuming that the Fermi level is pinned at the interface. The measured C–V characteristics quantitatively agree with modeled ones obtained by assuming that the interface state density and conduction band discontinuity are 1.5 × 10<sup>14</sup>cm<sup>−2</sup>eV<sup>−1</sup>and 0.63 eV, respectively. The effective heights of barriers at interfaces, which we estimate by analyzing dependences of I–V characteristics on the ambient temperature, are ∼10–20 meV for the two junctions at room temperature. This suggests that the transport of carriers is dominated by tunneling through interface states.

    DOI: 10.7567/JJAP.57.02BE02

    CiNii Article

  • Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding Reviewed

    Liang Jianbo, Ogawa Tomoki, Hara Tomoya, Araki Kenji, Kamioka Takefumi, Shigekawa Naoteru

    Institute of Physics JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE03-1 - 02BE03-5   2018.02( ISSN:0021-4922

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    The electrical properties of n<sup>+</sup>-Si//indium tin oxide (ITO)/n<sup>+</sup>-Si, n<sup>+</sup>-Si//ITO/p<sup>+</sup>-Si, and p<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current–voltage (I–V) characteristics of n<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si, n<sup>+</sup>-Si//ITO/p<sup>+</sup>-Si, and p<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si junctions showed excellent linear properties. The interface resistances of n<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si, n<sup>+</sup>-Si//ITO/p<sup>+</sup>-Si, and p<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si junctions were found to be 0.030, 0.025, and 0.029 Ω·cm<sup>2</sup>, respectively, which are lower than required for concentrator photovoltaics. The interface resistances of all the junctions increased with increasing annealing temperature. The degradation of the interface resistance is lower in n<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si junctions than in n<sup>+</sup>-Si//ITO/p<sup>+</sup>-Si and p<sup>+</sup>-Si//ITO/n<sup>+</sup>-Si junctions, when the annealing temperature is higher than 100 °C. These results demonstrate that the ITO thin film as an intermediate layer has high potential application for the connection of subcells in the fabrication of tandem solar cells.

    DOI: 10.7567/JJAP.57.02BE03

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  • Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding Reviewed

    Morita Sho, Liang Jianbo, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

    Institute of Physics JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BE01-1 - 02BE01-5   2018.02( ISSN:0021-4922

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    We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current–voltage and capacitance–voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

    DOI: 10.7567/JJAP.57.02BE01

    CiNii Article

  • Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature Reviewed

    Ohno Yutaka, Yoshida Hideto, Takeda Seiji, Liang Jianbo, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 2 )   02BA01-1 - 02BA01-3   2018.02( ISSN:0021-4922

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    DOI: 10.7567/JJAP.57.02BA01

  • Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices Invited Reviewed

    SHIGEKAWA Naoteru

    The Vacuum Society of Japan, Journal of the Vacuum Society of Japan   60 ( 11 )   421 - 427   2017.11

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     Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.<br>

    DOI: 10.3131/jvsj2.60.421

    CiNii Article

  • Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices Reviewed

    Liang Jianbo, Furuna Katsuya, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 9 )   P626 - P632   2017.08( ISSN:2162-8769

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    DOI: 10.1149/2.0251709jss

  • Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Device Reviewed

    Liang Jianbo, Furuna Katsuya, Matsubara Moeko, Dhamrin Marwan, Nishio Yoshitaka, Shigekawa Naoteru

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   2017.08

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    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

  • Realization of direct bonding of single crystal diamond and Si substrates Reviewed

    Liang Jianbo, Masuya Satoshi, Kasu Makoto, Shigekawa Naoteru

    APPLIED PHYSICS LETTERS   110 ( 11 )   111603-1 - 111603-4   2017.03( ISSN:0003-6951

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    DOI: 10.1063/1.4978666

  • Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate Reviewed

    Mitsuhara M., Watanabe N., Yokoyama H., Iga R., Shigekawa N.

    JOURNAL OF CRYSTAL GROWTH   449   86 - 91   2016.09( ISSN:0022-0248

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    DOI: 10.1016/j.jcrysgro.2016.05.050

    J-GLOBAL

  • Ultra-thick metal ohmic contact fabrication using surface activated bonding

    J. Liang, K. Furuna, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa

    ECS Transaction   75 ( 9 )   25 - 32   2016.09

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  • Determination of Band Structure at GaAs/4H-SiC Heterojunctions

    J. Liang, S. Shimizu, M. Arai, and N. Shigekawa

    ECS Transaction   75 ( 9 )   221 - 227   2016.09

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  • Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment Reviewed

    Liang J., Nishida S., Arai M., Shigekawa N.

    JOURNAL OF APPLIED PHYSICS   120 ( 3 )   7   2016.07( ISSN:0021-8979

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    DOI: 10.1063/1.4959072

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  • Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

    J. Liang, S. Nishida, M. Arai, and N. Shigekawa

    Journal of Applied Physics   120   034504-1-034504-7   2016.07

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  • Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structures grown by metalorganic molecular beam epitaxy on GaAs (100) sbstrate

    M. Mitsuhara, N. Watanabe, H. Yokoyama, R. Iga, and N. Shigekawa

    Journal of Crystal Growth   449   86 - 91   2016.06

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  • Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding Reviewed

    Chai Li, Liang Jianbo, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 6 )   2016.06( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.068002

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  • Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding

    Li Chai, Jianbo Liang, and Naoteru Shigekawa

    Journal of Applied Physics   55   068002-1-068002-3   2016.05

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  • Low-temperature (>= 400 degrees C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst Reviewed

    Yamamoto Akio, Kodama Kazuki, Shigekawa Naoteru, Matsuoka Takashi, Kuzuhara Masaaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 5 )   2016.05( ISSN:0021-4922

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    DOI: 10.7567/JJAP.55.05FD04

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  • Low-temperature (> 400 ºC) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

    Akio Yamamoto, Kazuki Kodama, Naoteru Shigekawa, Takashi Matsuoka, and Masaaki Kuzuhara

    Japanese Journal of Applied Physics   55   05FD04-1-05FD04-5   2016.04

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  • Mapping of Si/SiC p-n heterojunctions using scanning internal photoemission microscopy Reviewed

    Shingo Masato, Liang Jianbo, Shigekawa Naoteru, Arai Manabu, Shiojima Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016.04( ISSN:0021-4922

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    DOI: 10.7567/JJAP.55.04ER15

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  • Mapping of Si/SiC p–n heterojunctions using scanning internal photoemission microscopy

    Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji Shiojima

    Japanese Journal of Applied Physics   55   04ER15   2016.03

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  • 4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding

    Jianbo Liang, Sae Shimizu, Shota Nishida, Naoteru Shigekawa, and Manabu Arai

    ECS Solid State Lett.   4   Q55   2015.09

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  • MOVPE growth of thick (similar to 1 mu m) InGaN on AIN/Si substrates for InGaN/Si tandem solar cells Reviewed

    Yamamoto Akio, Kodama Kazuki, Hasan Md. Tanvir, Shigekawa Naoteru, Kuzuhara Masaaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.08( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.54.08KA12

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  • Current-voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells Reviewed

    Shigekawa Naoteru, Liang Jianbo, Onitsuka Ryusuke, Agui Takaaki, Juso Hiroyuki, Takamoto Tatsuya

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.08( ISSN:0021-4922

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    DOI: 10.7567/JJAP.54.08KE03

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  • MOCVD growth of thick (~1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells

    Akio Yamamoto, Kazuki. Kodama, Md. Tanvir Hasan, Naoteru Shigekawa, and Masaaki Kuzuhara

    Jpn. J. Appl. Phys.   54   08KA12   2015.07

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  • Current-voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells

    Naoteru Shigekawa, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto

    Jpn. J. Appl. Phys.   54   08KE03   2015.07

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  • Growth temperature dependent critical thickness for phase separation in thick (similar to 1 mu m) InxGa1-xN (x=0.2-0.4) Reviewed

    Yamamoto A., Hasan Tanvir Md, Kodama K., Shigekawa N., Kuzuhara M.

    JOURNAL OF CRYSTAL GROWTH   419   64 - 68   2015.06( ISSN:0022-0248

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2015.02.100

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  • Thick (similar to 1 mu m) p-type InxGa1-xN (x similar to 0.36) grown by MOVPE at a low temperature (similar to 570 degrees C) Reviewed

    Yamamoto A., Hasan T. Md., Kodama K., Shigekawa N., Kuzuhara M.

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   252 ( 5 )   909 - 912   2015.05( ISSN:0370-1972

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    DOI: 10.1002/pssb.201451736

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  • Growth temperature dependent critical thickness for phase separation in thick(~1 µm) InxGa1-xN (x=0.2-0.4)

    A. Yamamoto, Tanvir Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara

    J. Crystal Growth   419   64   2015.03

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  • Advances in Low-Temperature Bonding Technologies for 3D Integration Reviewed

    Suga Tadatomo, Shigekawa Naoteru, Higurashi Eiji, Takagi Hideki, Shimomura Kazuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   2015.03( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.54.030200

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  • Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si Reviewed

    Nishida Shota, Liang Jianbo, Hayashi Tomohiro, Arai Manabu, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   1 - 30210   2015.03( ISSN:0021-4922

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    DOI: 10.7567/JJAP.54.030210

    CiNii Article

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  • Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding Reviewed

    Morimoto Masashi, Liang Jianbo, Nishida Shota, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   1 - 30212   2015.03( ISSN:0021-4922

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    DOI: 10.7567/JJAP.54.030212

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  • Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding Reviewed

    Liang Jianbo, Chai Li, Nishida Shota, Morimoto Masashi, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   1 - 30211   2015.03( ISSN:0021-4922

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    DOI: 10.7567/JJAP.54.030211

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    J-GLOBAL

  • Thick (~1 µm) p-type InxGa1-xN (x~0.36) grown by MOVPE at a low temperature (~570 ºC)

    A. Yamamoto, T. Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara

    Physica Stat. Solidi B   42739   DOI: 10.1002/pssb.201451736   2015.02

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  • Correlation between the electrical properties of p-Si/n-4H-SiC junctions and cocentrations of acceptors in Si

    Shota Nishida, Jianbo Liang, Tomohiro Hayashi, Manabu Arai and Naoteru Shigekawa

    Jpn. J. Appl. Phys.   54   30210   2015.02

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  • Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding

    Masashi Morimoto, Jianbo Liang, Shota Nishida and Naoteru Shigekawa

    Jpn. J. Appl. Phys.   54   30212   2015.02

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  • Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding

    Jianbo Liang, Li Chai, Shota Nishida, Masashi Morimoto and Naoteru Shigekawa

    Jpn. J. Appl. Phys.   54   30211   2015.02

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  • Impacts of Optical Properties of Anti-Reflection Coatings on Characteristics of InGaP/GaAs/Si Hybrid Triple-Junction Cells Reviewed

    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2015( ISSN:0160-8371

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  • 4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding Reviewed

    Liang Jianbo, Shimizu Sae, Nishida Shota, Shigekawa Naoteru, Arai Manabu

    ECS SOLID STATE LETTERS   4 ( 11 )   Q55 - Q57   2015( ISSN:2162-8742

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    DOI: 10.1149/2.0041511ssl

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  • Critical thickness for phase separation in MOVPE-grown thick InGaN Reviewed

    KODAMA K., HASAN Md Tanvir, NOMURA H., SHIGEKAWA N., YAMAMOTO A., KUZUHARA M.

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   114 ( 337 )   9 - 14   2014.11( ISSN:0913-5685

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    This paper reports phase separation in thick (〜1 μm) MOVPE In_xGa_<1-x>N (x=0.2〜0.4) films grown by MOVPE at 570-750℃ on AlN/Si(111), α-Al_2O_3(0001) and GaN/α-Al_2O_3(0001) substrates. Phase separation occurs when InGaN thickness exceeds a critical value. Critical thickness of phase separation is markedly increased with decreasing growth temperature. It is around 0.2μm for a film grown at 750℃, while it is more than 1μm for that grown at 570℃. No substrate dependencies are found in critical thickness. The cross-sectional SEM views of grown films show that phase separation is initiated at the middle part of an InGaN film and extended to the area near the substrate. SIMS analysis shows a possibility that phase separation is initiated at a part with a relatively large In/Ga ratio fluctuations in InGaN films.

    CiNii Article

  • Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Reviewed

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   114 ( 338 )   103 - 106   2014.11( ISSN:0913-5685

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    We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-circuit current and the MQW structure. We previously reported that the short-circuit current dependence on the number of well can be well explained by the hypothesis that the transport characteristics of photoinduced carriers are characterized by the "specific length" within which carriers photoinduced in the InGaN well layer can move before recombination. In this report, we estimated the specific length of several MQW structures and the specific length depends on the thickness of well layer more strongly than on that of barrier layer. We also investigate the relationship between the specific length and the MQW structure. The optimum MQW structure for yielding higher short-circuit current can be determined using the specific length and the absorption process in the MQW structure.

    CiNii Article

  • Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Reviewed

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   114 ( 336 )   103 - 106   2014.11( ISSN:0913-5685

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    We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-circuit current and the MQW structure. We previously reported that the short-circuit current dependence on the number of well can be well explained by the hypothesis that the transport characteristics of photoinduced carriers are characterized by the "specific length" within which carriers photoinduced in the InGaN well layer can move before recombination. In this report, we estimated the specific length of several MQW structures and the specific length depends on the thickness of well layer more strongly than on that of barrier layer. We also investigate the relationship between the specific length and the MQW structure. The optimum MQW structure for yielding higher short-circuit current can be determined using the specific length and the absorption process in the MQW structure.

    CiNii Article

  • Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Reviewed

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   114 ( 337 )   103 - 106   2014.11( ISSN:0913-5685

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    Publishing type:Research paper (scientific journal)  

    We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-circuit current and the MQW structure. We previously reported that the short-circuit current dependence on the number of well can be well explained by the hypothesis that the transport characteristics of photoinduced carriers are characterized by the "specific length" within which carriers photoinduced in the InGaN well layer can move before recombination. In this report, we estimated the specific length of several MQW structures and the specific length depends on the thickness of well layer more strongly than on that of barrier layer. We also investigate the relationship between the specific length and the MQW structure. The optimum MQW structure for yielding higher short-circuit current can be determined using the specific length and the absorption process in the MQW structure.

    CiNii Article

  • Critical thickness for phase separation in MOVPE-grown thick InGaN Reviewed

    KODAMA K., HASAN Md Tanvir, NOMURA H., SHIGEKAWA N., YAMAMOTO A., KUZUHARA M.

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   114 ( 338 )   9 - 14   2014.11( ISSN:0913-5685

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    This paper reports phase separation in thick (〜1 μm) MOVPE In_xGa_<1-x>N (x=0.2〜0.4) films grown by MOVPE at 570-750℃ on AlN/Si(111), α-Al_2O_3(0001) and GaN/α-Al_2O_3(0001) substrates. Phase separation occurs when InGaN thickness exceeds a critical value. Critical thickness of phase separation is markedly increased with decreasing growth temperature. It is around 0.2μm for a film grown at 750℃, while it is more than 1μm for that grown at 570℃. No substrate dependencies are found in critical thickness. The cross-sectional SEM views of grown films show that phase separation is initiated at the middle part of an InGaN film and extended to the area near the substrate. SIMS analysis shows a possibility that phase separation is initiated at a part with a relatively large In/Ga ratio fluctuations in InGaN films.

    CiNii Article

  • Critical thickness for phase separation in MOVPE-grown thick InGaN Reviewed

    KODAMA K., HASAN Md Tanvir, NOMURA H., SHIGEKAWA N., YAMAMOTO A., KUZUHARA M.

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   114 ( 336 )   9 - 14   2014.11( ISSN:0913-5685

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    This paper reports phase separation in thick (〜1 μm) MOVPE In_xGa_<1-x>N (x=0.2〜0.4) films grown by MOVPE at 570-750℃ on AlN/Si(111), α-Al_2O_3(0001) and GaN/α-Al_2O_3(0001) substrates. Phase separation occurs when InGaN thickness exceeds a critical value. Critical thickness of phase separation is markedly increased with decreasing growth temperature. It is around 0.2μm for a film grown at 750℃, while it is more than 1μm for that grown at 570℃. No substrate dependencies are found in critical thickness. The cross-sectional SEM views of grown films show that phase separation is initiated at the middle part of an InGaN film and extended to the area near the substrate. SIMS analysis shows a possibility that phase separation is initiated at a part with a relatively large In/Ga ratio fluctuations in InGaN films.

    CiNii Article

  • Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell Reviewed

    Watanabe Noriyuki, Mitsuhara Manabu, Yokoyama Haruki, Liang Jianbo, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 11 )   1 - 112301   2014.11( ISSN:0021-4922

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    DOI: 10.7567/JJAP.53.112301

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  • Effects of interface state charges on the electrical properties of Si/SiC heterojunctions Reviewed

    Liang J., Nishida S., Hayashi T., Arai M., Shigekawa N.

    APPLIED PHYSICS LETTERS   105 ( 15 )   2014.10( ISSN:0003-6951

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    DOI: 10.1063/1.4898674

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  • Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

    N. Watanabe, M. Mitsuhara, H. Yokoyama, J. Liang, and N. Shigekawa

    Jpn. J. Appl. Phys.   53   112301   2014.10

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  • Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells

    Naoteru Shigekawa, Jianbo Liang, Masashi Morimoto, and Shota Nishida

    ECS Trans.   64 ( 5 )   235 - 242   2014.10

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  • Effects of interface state charges on the electrical properties of Si/SiC heterojunctions

    J. Liang, S. Nishida, T. Hayashi, M. Arai, and N. Shigekawa

    Appl. Phys. Lett.   105   151607   2014.10

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  • Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions Reviewed

    J. Liang, S. Nishida, M. Arai, and N. Shigekawa

    Applied Physics Letters   104 ( 16 )   2014.04( ISSN:0003-6951

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    DOI: 10.1063/1.4873113

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  • Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions

    J. Liang, S. Nishida, M. Arai, and N. Shigekawa

    Appl. Phys. Lett.   104   161604   2014.04

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  • Surface-activated-bonding-based InGaP-on-Si double-junction cells Reviewed

    Naoteru Shigekawa, Masashi Morimoto, Shota Nishida, and Jianbo Liang

    Japanese Journal of Applied Physics   53 ( 4 )   1 - 4   2014.04( ISSN:0021-4922

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    DOI: 10.7567/JJAP.53.04ER05

    CiNii Article

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  • Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding

    14.N. Shigekawa, J. Liang, N. Watanabe, and A. Yamamoto

    Physica Status Solidi C   11 ( 42798 )   644 - 647   2014.03

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  • Hybrid Triple-Junction Solar Cells by Surface Activated Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells

    Naoteru Shigekawa, et al.

    Proc. 40th IEEE Photovoltaic Specialists Conference   534 - 537   2014

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  • Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding Reviewed

    Naoteru Shigekawa, Jianbo Liang, Noriyuki Watanabe, and Akio Yamamoto

    Physica Status Solidi C   11 ( 3-4 )   644 - 647   2014( ISSN:1610-1642|1862-6351

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    DOI: 10.1002/pssc.201300413

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  • Hybrid Triple-Junction Solar Cells by Surface Activate Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells Reviewed

    Shigekawa N., Morimoto M., Chai L., Onitsuka R., Liang J., Juso H., Agui T., Takamoto T.

    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   534 - 537   2014

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    DOI: 10.1109/PVSC.2014.6924976

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  • I-V characteristics in Surface-Activated Bonding (SAB) based Si/SiC junctions at raised ambient temperatures Reviewed

    Shota Nishida, Jianbo Liang, Masashi Morimoto,Naoteru Shigekawa, and Manabu Arai

    Materials Science Forum   778/780 ( Pt.2 )   718 - 721   2014( ISSN:0255-5476

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    DOI: 10.4028/www.scientific.net/MSF.778-780.718

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  • Phase separation of thick (>1 μm) InxGa1-xN (x > 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN Reviewed

    Akio Yamamoto, Md. Tanvir Hasan, Akihiro Mihara, Norihiko Narita, Naoteru Shigekawa, and Masaki Kuzuhara

    Applied Physics Express   7 ( 3 )   1 - 35502   2014( ISSN:1882-0778|1882-0786

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    DOI: 10.7567/APEX.7.035502

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  • Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells Reviewed

    Shigekawa Naoteru, Liang Jianbo, Morimoto Masashi, Nishida Shota

    SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS   64 ( 5 )   235 - 242   2014( ISSN:1938-6737|1938-5862

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    DOI: 10.1149/06405.0235ecst

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  • I-V characteristics in surface-activated bonding (SAB) based Si/SiC junctions in raised ambient temperatures

    S. Nishida, J. Liang, M. Morimoto, and M. Arai

    Materials Science Forum   778-780   718   2014

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  • Surface-activated-bonding-based InGaP-on-Si double-junction cells

    M. Morimoto, S. Nishida, and J. Liang

    Japanese Journal of Applied Physics   53   04ER05   2014

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  • Phase separation of thick (~1 µm) InxGa1-xN (x~0.3) grown on AlN/Si (111): Simulateneous emergence of metallic In-Ga and GaN-rich InGaN

    Applied Physics Express   7   35502   2014

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  • Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

    LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   113 ( 330 )   27 - 30   2013.11( ISSN:0913-5685

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    The electrical properties of pn junctions with various semiconductor materials with different doping concentrations, InGaP/(100)Si n-on-p,InGaP/(100)Si p-on-n and InGaP/(111)Si p-on-n double junction cells fabricated by using surface activated bonding (SAB) were investigated. The I-V characteristics of pn junctions composed of semiconductor junction layers of high impurity concentration showed ohmic-like properties. We obtained the lowest interfacial resistance (0.13Ω・cm^2) in the p^+-GaAs/n^<++>-Si junction, the interface resistance decrease with increasing impurity concentration. Its value was considered to be sufficiently low on the solar cell application. The open circuit voltage (V_<oc>) was almost equal to those of the respective subcells in the two-junction solar cells, furthermore, the conversion efficiency (11.1%) was larger than those of the subsells in the InGaP/(100)Si n-on-p double junction cells. These results suggest that SAB method is suitable for fabrication of high efficiency multi junction cells on the Si substrate.

    CiNii Article

  • Investigation on the optimum MQW structure for InGaN/GaN solar cells Reviewed

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   113 ( 331 )   31 - 34   2013.11( ISSN:0913-5685

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    We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. We reported that higher short circuit current was obtained in solar cells with thinner GaN barrier layer and with more numbers of InGaN/GaN period. This tendency can be explained by the hypothesis that the transportation of photo-induced carriers is determined by the diffusion process with some diffusion length. Based on this model, we find that the MQW structure with thinner barrier layer are advantageous for higher short circuit current.

    CiNii Article

  • Investigation on the optimum MQW structure for InGaN/GaN solar cells Reviewed

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   113 ( 329 )   31 - 34   2013.11( ISSN:0913-5685

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    We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. We reported that higher short circuit current was obtained in solar cells with thinner GaN barrier layer and with more numbers of InGaN/GaN period. This tendency can be explained by the hypothesis that the transportation of photo-induced carriers is determined by the diffusion process with some diffusion length. Based on this model, we find that the MQW structure with thinner barrier layer are advantageous for higher short circuit current.

    CiNii Article

  • Investigation on the optimum MQW structure for InGaN/GaN solar cells Reviewed

    WATANABE Noriyuki, MITSUHARA Manabu, YOKOYAMA Haruki, LIANG Jianbo, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   113 ( 330 )   31 - 34   2013.11( ISSN:0913-5685

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    We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. We reported that higher short circuit current was obtained in solar cells with thinner GaN barrier layer and with more numbers of InGaN/GaN period. This tendency can be explained by the hypothesis that the transportation of photo-induced carriers is determined by the diffusion process with some diffusion length. Based on this model, we find that the MQW structure with thinner barrier layer are advantageous for higher short circuit current.

    CiNii Article

  • Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Reviewed

    Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   113 ( 331 )   21 - 25   2013.11( ISSN:0913-5685

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    The physical and electrical properties of p^+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V), capacitance-voltage (C-V), and breakdown characteristics measurements. The I-V characteristics of p^+-Si/n-4H-SiC junctions showed rectifying properties at room temperature. The flat-band voltage was around 1 .OV and the conduction band offset of p^+-Si/n-4H-SiC junctions was determined to be 〜0.02 eV from the C-V characteristics. The obtained breakdown voltages from the breakdown characteristics corresponded to the electric field of 〜0.88 MV/cm (not annealing) and 〜2.11 MV/cm (annealing) and these values were higher than critical electric fields at breakdown in bulk Si (〜0.3 MV/cm) and in Si-based one-sided abrupt junction (〜0.65 MV/cm).

    CiNii Article

  • Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Reviewed

    Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   113 ( 329 )   21 - 25   2013.11( ISSN:0913-5685

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    The physical and electrical properties of p^+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V), capacitance-voltage (C-V), and breakdown characteristics measurements. The I-V characteristics of p^+-Si/n-4H-SiC junctions showed rectifying properties at room temperature. The flat-band voltage was around 1.0V and the conduction band offset of p^+-Si/n-4H-SiC junctions was determined to be 〜0.02 eV from the C-V characteristics. The obtained breakdown voltages from the breakdown characteristics corresponded to the electric field of 〜0.88 MV/cm (not annealing) and 〜2.11 MV/cm (annealing) and these values were higher than critical electric fields at breakdown in bulk Si (〜0.3 MV/cm) and in Si-based one-sided abrupt junction (〜0.65 MV/cm).

    CiNii Article

  • Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Reviewed

    Nishida Shota, Liang Jianbo, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   113 ( 330 )   21 - 25   2013.11( ISSN:0913-5685

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    Publishing type:Research paper (scientific journal)  

    The physical and electrical properties of p^+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V), capacitance-voltage (C-V), and breakdown characteristics measurements. The I-V characteristics of p^+-Si/n-4H-SiC junctions showed rectifying properties at room temperature. The flat-band voltage was around 1.0V and the conduction band offset of p^+-Si/n-4H-SiC junctions was determined to be 〜0.02 eV from the C-V characteristics. The obtained breakdown voltages from the breakdown characteristics corresponded to the electric field of 〜0.88 MV/cm (not annealing) and 〜2.11 MV/cm (annealing) and these values were higher than critical electric fields at breakdown in bulk Si (〜0.3 MV/cm) and in Si-based one-sided abrupt junction (〜0.65 MV/cm).

    CiNii Article

  • Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

    LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   113 ( 331 )   27 - 30   2013.11( ISSN:0913-5685

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    The electrical properties of pn junctions with various semiconductor materials with different doping concentrations, InGaP/(100)Si n-on-p,InGaP/(100)Si p-on-n and InGaP/(111)Si p-on-n double junction cells fabricated by using surface activated bonding (SAB) were investigated. The I-V characteristics of pn junctions composed of semiconductor junction layers of high impurity concentration showed ohmic-like properties. We obtained the lowest interfacial resistance (0.13Ω・cm^2) in the p^+-GaAs/n^<++>-Si junction, the interface resistance decrease with increasing impurity concentration. Its value was considered to be sufficiently low on the solar cell application. The open circuit voltage (V_<oc>) was almost equal to those of the respective subcells in the two-junction solar cells, furthermore, the conversion efficiency (11.1%) was larger than those of the subsells in the InGaP/(100)Si n-on-p double junction cells. These results suggest that SAB method is suitable for fabrication of high efficiency multi junction cells on the Si substrate.

    CiNii Article

  • Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

    LIANG Jianbo, NiSHIDA Shota, MORIMOTO Masashi, SHIGEGAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   113 ( 329 )   27 - 30   2013.11( ISSN:0913-5685

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    Publishing type:Research paper (scientific journal)  

    The electrical properties of pn junctions with various semiconductor materials with different doping concentrations, InGaP/(100)Si n-on-p,InGaP/(100)Si p-on-n and InGaP/(111)Si p-on-n double junction cells fabricated by using surface activated bonding (SAB) were investigated. The I-V characteristics of pn junctions composed of semiconductor junction layers of high impurity concentration showed ohmic-like properties. We obtained the lowest interfacial resistance (0.13Ω・cm^2) in the p^+-GaAs/n^<++>-Si junction, the interface resistance decrease with increasing impurity concentration. Its value was considered to be sufficiently low on the solar cell application. The open circuit voltage (V_<oc>) was almost equal to those of the respective subcells in the two-junction solar cells, furthermore, the conversion efficiency (11.1%) was larger than those of the subsells in the InGaP/(100)Si n-on-p double junction cells. These results suggest that SAB method is suitable for fabrication of high efficiency multi junction cells on the Si substrate.

    CiNii Article

  • Electrical properties of Si/Si interfaces by using surface-activated bonding Reviewed

    J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, and N. Shigekawa

    Journal of Applied Physics   114 ( 18 )   2013.11( ISSN:0021-8979

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    DOI: 10.1063/1.4829676

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  • Band structures of Si/InGaP heterojunctions by using surface-activated bonding

    J. Liang, M. Morimoto, S. Nishida, and N. Shigekawa

    Phys. Status Solidi C   10   1644   2013.09

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  • Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x similar to 0.3) grown on GaN/alpha-Al2O3(0001) template Reviewed

    Yamamoto Akio, Mihara Akihiro, Shigekawa Naoteru, Narita Norihiko

    APPLIED PHYSICS LETTERS   103 ( 8 )   2013.08( ISSN:0003-6951

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    DOI: 10.1063/1.4819075

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  • Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization Reviewed

    Noriyuki Watanabe, Haruki Yokoyama, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   52 ( 8 )   08JN03 - 08JN03-3   2013.08( ISSN:0021-4922

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    DOI: 10.7567/JJAP.52.08JN03

    CiNii Article

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  • A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate Reviewed

    Akio Yamamoto, Akihiro Mihara, Yangdong Zheng, and Naoteru Shigekawa

    Japanese Journal of Applied Physics   52 ( 8 )   08JD03 - 08JD03-3   2013.08( ISSN:0021-4922

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.52.08JB19

    CiNii Article

    J-GLOBAL

  • Surface-activating-bonding-based low resistance Si/III-V junctions Reviewed

    J. Liang, S. Nishida, M. Morimoto and N. Shigekawa

    IEE Electronics Letters   49 ( 13 )   830 - 831   2013.06( ISSN:0013-5194

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    DOI: 10.1049/el.2013.1553

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  • Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding Reviewed

    Liang Jianbo, Miyazaki Tatsuya, Morimoto Masashi, NISHIDA Shota, WATANABE Noriyuki, SHIGEKAWA Naoteru

    Japan Society of Applied Physics Applied physics express   6 ( 2 )   "021801 - 1"-"021801-3"   2013.02( ISSN:18820778

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    CiNii Article

  • MOVPE Growth of InxGa1-xN (x~0.5) on Si(111) substrates with a pn junction on the surface

    A. Yamamoto, A. Mihara, D. Hironaga, K. Sugita, A. G. Bhuiyan, A. Hashimoto, N. Shigekawa, N. Watanabe

    Physica Status Solidi (C)   10   437 - 440   2013.02

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  • Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding Reviewed

    Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, and Naoteru Shigekawa

    Applied Physics Express   6 ( 2 )   1 - 21801   2013.02( ISSN:1882-0778

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    DOI: 10.7567/APEX.6.021801

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  • Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface Activated Bonding

    Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, Naoteru Shigekawa

    Applied Physics Express   6   021801-1-021801-3   2013.01

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  • Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface Activated Bonding

    N. Shigekawa, J. Liang, and N. Watanabe

    Proc. 39th IEEE Photovoltaic Specialists Conference   2470 - 2473   2013

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  • Band structures of Si/InGaP heterojunctions by using surface activated bonding Reviewed

    Jianbo Liang, Masashi Morimoto, Shota Nishida, and Naoteru Shigekawa

    Physica Status Solidi C   10 ( 11 )   1644 - 1647   2013( ISSN:1610-1642|1862-6351

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201300235

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  • Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using Surface-Activated Bonding Reviewed

    Naoteru Shigekawa, Jianbo Liang, and Noriyuki Watanabe

    Proceedings of 39th IEEE Photovoltaic Specialists Conference   2470 - 2473   2013( ISSN:0160-8371

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/PVSC.2013.6744976

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  • MOVPE growth of InxGa1-xN (x similar to 0.5) on Si(111) substrates with a pn junction on the surface Reviewed

    Yamamoto A., Mihara A., Hironaga D., Sugita K., Bhuiyan A. G., Hashimoto A., Shigekawa N., Watanabe N.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3   10 ( 3 )   437 - 440   2013( ISSN:1610-1642|1862-6351

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    DOI: 10.1002/pssc.201200649

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  • MOVPE-grown n-InxGa1-xN (x similar to 0.5)/p-Si(111) template as a novel substrate Reviewed

    Yamamoto A., Mihara A., Sugita K., Davydov V. Yu, Shigekawa N.

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII   8641   2013( ISSN:0277-786X

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    DOI: 10.1117/12.999272

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  • Electrical properties of Si/Si interfaces by using surface-activated bonding

    J. Liang, T. Miyazaki, M. Morimoto, S. Nishida

    Journal of Applied Physics   114   183703   2013

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  • Band structures of Si/InGaP heterojunctions by using surface-activated bonding

    J. Liang, M. Morimoto, S. Nishida

    Physica Status Solidi C   10   1644   2013

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  • Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x~0.3) grown on GaN/a-Al2O3(0001) template

    6.A. Yamamoto, A. Mihara, and N. Narita

    Applied Physics Letters   103   82113   2013

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  • Surface-activating-bonding-based low-resistance Si/III-V junctions

    J. Liang, S. Nishida, M. Morimoto

    Electronics Letters   49 ( 13 )   830   2013

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  • A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate

    A. Yamamoto, A. Mihara, Y. Zheng

    Japnese Journal of Applied Physics   52   08JB19   2013

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  • Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

    N. Watanabe, H. Yokoyama

    Japanese Journal of Applied Physics   52   08JN03   2013

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  • Electrical Properties of Si-based Junctions by SAB

    N. Shigekawa, N. Watanabe, E. Higurashi

    Proc. 3rd International IEEE Workshop on Low Temperature Bonding for 3D Integration   109 - 112   2012.12

  • Electrical Properties of Si-Based Heterojunctions by Surface-Activated Reviewed

    LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   112 ( 329 )   1 - 5   2012.11( ISSN:0913-5685

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    The electrical properties of Si/Si, Si/GaN and Si/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. Current-voltage (I-V) characteristics of n-Si/n-Si and n-Si/n-GaN junctions indicated ohmic features at room temperature. The I-V characteristics of respective n-Si/n-Si dice were close to one another. No mechanical deficits were observed in n-Si/n-GaN junctions after measurements in varied temperatures. The p-Si/n-GaAs junctions revealed good rectifying properties. Their flat-band voltage was around 1.6 V which is close to the diffusion potential calculated for p-Si/n-GaAs heterojunctions with no electric charges placed at the interface. These results indicate that the SAB is potentially applicable for fabricating novel devices.

    CiNii Article

  • Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Reviewed

    WATANABE Noriyuki, YOKOYAMA Haruki, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, Technical report of IEICE. LQE   112 ( 329 )   21 - 24   2012.11( ISSN:0913-5685

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    We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure.

    CiNii Article

  • Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Reviewed

    WATANABE Noriyuki, YOKOYAMA Haruki, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   112 ( 327 )   21 - 24   2012.11( ISSN:0913-5685

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    We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure.

    CiNii Article

  • Anomalous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Reviewed

    WATANABE Noriyuki, YOKOYAMA Haruki, SHIGEKAWA Naoteru

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   112 ( 328 )   21 - 24   2012.11( ISSN:0913-5685

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    We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diode grown by metalorganic chemical vapor deposition. The tunneling-junction-like band profile of the undoped GaN/undoped AlGaN/n-type GaN (GAG) structure is formed by a spontaneous and piezo polarization effect. We observe negative-differential resistance (NDR) behavior in the diode with the GAG structure. The NDR behavior suggests a possible tunneling junction consisting in the GAG structure.

    CiNii Article

  • Electrical Properties of Si-Based Heterojunctions by Surface-Activated Reviewed

    LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Component parts and materials   112 ( 328 )   1 - 5   2012.11( ISSN:0913-5685

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    Publishing type:Research paper (scientific journal)  

    The electrical properties of Si/Si, Si/GaN and Si/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. Current-voltage (I-V) characteristics of n-Si/n-Si and n-Si/n-GaN junctions indicated ohmic features at room temperature. The I-V characteristics of respective n-Si/n-Si dice were close to one another. No mechanical deficits were observed in n-Si/n-GaN junctions after measurements in varied temperatures. The p-Si/n-GaAs junctions revealed good rectifying properties. Their flat-band voltage was around 1.6V, which is close to the diffusion potential calculated for p-Si/n-GaAs heterojunctions with no electric charges placed at the interface. These results indicate that the SAB is potentially applicable for fabricating novel devices.

    CiNii Article

  • Electrical Properties of Si-Based Heterojunctions by Surface-Activated Reviewed

    LIANG Jianbo, SHIGEGAWA Naoteru, HIGURASHI Eiji

    The Institute of Electronics, Information and Communication Engineers, IEICE technical report. Electron devices   112 ( 327 )   1 - 5   2012.11( ISSN:0913-5685

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    Publishing type:Research paper (scientific journal)  

    The electrical properties of Si/Si, Si/GaN and Si/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. Current-voltage (I-V) characteristics of n-Si/n-Si and n-Si/n-GaN junctions indicated ohmic features at room temperature. The I-V characteristics of respective n-Si/n-Si dice were close to one another. No mechanical deficits were observed in n-Si/n-GaN junctions after measurements in varied temperatures. The p-Si/n-GaAs junctions revealed good rectifying properties. Their flat-band voltage was around 1.6V, which is close to the diffusion potential calculated for p-Si/n-GaAs heterojunctions with no electric charges placed at the interface. These results indicate that the SAB is potentially applicable for fabricating novel devices.

    CiNii Article

  • Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

    Noriyuki Watanabe, Haruki Yokoyama, Naoteru Shigekawa, Ken-ichi Sugita, Akio Yamamoto

    Japanese Jounral of Applied Physics   51 ( 10 )   10ND10-1-10ND10-5   2012.10

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  • Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

    Haruki Yokoyama, Takuya Hoshi, Naoteru Shigekawa, and Minoru Ida

    Japanese Journal of Applied Physics   51 ( 2 )   025601-1-025601-4   2012.02

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  • Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile Reviewed

    Nada Masahiro, Muramoto Yoshifumi, Yokoyama Haruki, Shigekawa Naoteru, Ishibashi Tadao, Kodama Satoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 2,Issue 2 )   1 - 2   2012.02( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.51.02BG03

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  • Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition Reviewed

    Yokoyama Haruki, Hoshi Takuya, Shigekawa Naoteru, Ida Minoru

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 2,Issue 1 )   1 - 25601   2012.02( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.51.025601

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  • Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile

    Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Tadao Ishibashi, Satoshi Kodama

    Japanese Journal of Applied Physics   51 ( 2 )   02BG03-1-02BG03-4   2012.02

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    Publishing type:Research paper (scientific journal)  

  • MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Reviewed

    Bhuiyan Ashraful G., Mihara A., Esaki T., Sugita K., Hashimoto A., Yamamoto A., Watanabe N., Yokoyama H., Shigekawa N.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   9 ( 3-4 )   670 - 672   2012( ISSN:1610-1642|1862-6351

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201100355

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  • Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces Reviewed

    Akazawa M., Gao B., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   9 ( 3-4 )   592 - 595   2012( ISSN:1610-1642|1862-6351

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201100319

    J-GLOBAL

  • Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces

    M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, N. Shigekawa

    Physica Status Solidi (C)   9 ( 42798 )   592 - 595   2011.12

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    Publishing type:Research paper (scientific journal)  

  • MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

    Ashraful G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, N. Shigekawa

    Physica Status Solidi (C)   9 ( 42798 )   670 - 672   2011.11

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    Publishing type:Research paper (scientific journal)  

  • Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures Reviewed

    Akazawa M., Gao B., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

    APPLIED PHYSICS LETTERS   98 ( 14 )   142117   2011.04( ISSN:0003-6951

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3578449

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  • Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

    M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa

    Applied Physics Letters   98 ( 14 )   142117-1-142117-3   2011.03

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    Publishing type:Research paper (scientific journal)  

  • Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy Reviewed

    Akazawa M., Gao B., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

    JOURNAL OF APPLIED PHYSICS   109 ( 1 )   13703   2011.01( ISSN:1089-7550|0021-8979

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3527058

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  • Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

    M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, N. Shigekawa

    Journal of Applied Physics   109 ( 1 )   013703-1-013703-8   2011.01

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    Publishing type:Research paper (scientific journal)  

  • Investigation of polarization-induced electric field in ultrathin InAlN layers on GaN by X-ray photoelectron spectroscopy Reviewed

    Akazawa M., Hashizume T., Gao B., Yamahata S., Hiroki M., Shigekawa N.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   8 ( 7-8 )   2139 - 2141   2011( ISSN:1610-1642|1862-6351

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201000917

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  • Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs

    Naoteru Shigekawa, Suehiro Sugitani

    IEICE Transaction on Electronics   E93-C ( 8 )   1212 - 1217   2010.08

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  • Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs Reviewed

    Shigekawa Naoteru, Sugitani Suehiro

    IEICE TRANSACTIONS ON ELECTRONICS   E93C ( 8 )   1212 - 1217   2010.08( ISSN:0916-8524

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/transele.E93.C.1212

  • Suppression of space charge effect in MIC-PD using composite field structure Reviewed

    Yoshimatsu T., Muramoto Y., Kodama S., Furuta T., Shigekawa N., Yokoyama H., Ishibashi T.

    ELECTRONICS LETTERS   46 ( 13 )   941 - 943   2010.06( ISSN:0013-5194|1350-911X

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1049/el.2010.0964

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  • Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness Reviewed

    Hiroki Masanobu, Maeda Narihiko, Shigekawa Naoteru

    IEICE TRANSACTIONS ON ELECTRONICS   E93-C ( 5 )   579 - 584   2010.05( ISSN:0916-8524|1745-1353

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/transele.E93.C.579

    J-GLOBAL

  • Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy Reviewed

    Akazawa M., Matsuyama T., Hashizume T., Hiroki M., Yamahata S., Shigekawa N.

    APPLIED PHYSICS LETTERS   96 ( 13 )   132104   2010.03( ISSN:0003-6951

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3368689

    J-GLOBAL

  • Suppression of space charge effect in MIC-PD using composite field structure

    T. Yoshimatsu, Y. Muramoto, S. Kodama, T. Furuta, N. Shigekawa, H. Yokoyama, and T. Ishibashi

    Electronics Letters   46 ( 13 )   941 - 943   2010.01

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    Publishing type:Research paper (scientific journal)  

  • Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x=0.245-0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers Reviewed

    Hiroki Masanobu, Maeda Narihiko, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 4,Issue 2 )   1 - 4   2010( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.49.04DF13

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  • Numerical analysis of impact of stress in passivation films on electrical properties in AlGaN/GaN heterostructures Reviewed

    Shigekawa Naoteru, Sugitani Suehiro

    IEICE ELECTRONICS EXPRESS   6 ( 14 )   1045 - 1050   2009.07( ISSN:1349-2543

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/elex.6.1045

    J-GLOBAL

  • DC variable harmonic pass band operation of AlGaN/GaN surface acoustic wave devices Reviewed

    Hohkawa Kohji, Koh Keishin, Nishimura Kazumi, Shigekawa Naoteru

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 Issue 1 )   7104 - 7107   2008.09( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.47.7104

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  • Surface acoustic waves in reverse-biased AlGaN/GaN hetero structures Reviewed

    Shigekawa Naoteru, Nishimura Kazumi, Yokoyama Haruki, Hohkawa Kohji

    IEEE TRANSACTIONS ON ELECTRON DEVICES   55 ( 7 )   1585 - 1591   2008.07( ISSN:1557-9646|0018-9383

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2008.923565

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  • SAW filters composed of interdigital Schottky and Ohmic contacts on AlGaN/GaN heterostructures Reviewed

    Shigekawa Naoteru, Nishimura Kazumi, Suemitsu Tetsuya, Yokoyama Haruki, Hohkawa Kohji

    IEEE ELECTRON DEVICE LETTERS   28 ( 2 )   90 - 92   2007.02( ISSN:0741-3106|1558-0563

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2006.889043

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  • Interdigital transducers with control gates on AlGaN/GaN heterostructures Reviewed

    Shigekawa Naoteru, Nishimura Kazumi, Suemitsu Tetsuya, Yokoyama Haruki, Hohkawa Kohji

    APPLIED PHYSICS LETTERS   89 ( 3 )   2006.07( ISSN:0003-6951

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2221899

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  • SAW characteristics of GaN with n(+)-GaN IDTs Reviewed

    Nishimura K, Shigekawa N, Yokoyama H, Hohkawa K

    ELECTRONICS LETTERS   42 ( 1 )   62 - 63   2006.01( ISSN:0013-5194|1350-911X

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1049/el:20063748

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  • Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs Reviewed

    Shiojima K., Makimura T., Maruyama T., Suemitsu T., Shigekawa N., Hiroki M., Yokoyama H.

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6   3 ( 6 )   2360 - 2363   2006( ISSN:1862-6351|1610-1634

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200565130

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  • Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers Reviewed

    Shiojima K, Makimura T, Maruyama T, Kosugi T, Suemitsu T, Shigekawa N, Hiroki M, Yokoyama H

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   469 - 472   2006( ISSN:1610-1634

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200564104

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  • Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate high-electron-mobility transistors on sapphire substrates Reviewed

    Shiojima K, Makimura T, Suemitsu T, Shigekawa N

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 12 )   8435 - 8440   2005.12( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.44.8435

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  • Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates Reviewed

    Shigekawa Naoteru, Nishimura Kazumi, Yokoyama Haruki, Shiojima Kenji, Hohkawa Kohji

    IEICE ELECTRONICS EXPRESS   2 ( 19 )   495 - 500   2005.10( ISSN:1349-2543

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/elex.2.495

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  • SAW characteristics of GaN layers with surfaces exposed by dry etching Reviewed

    Nishimura Kazumi, Shigekawa Naoteru, Yokoyama Haruki, Hiroki Masanobu, Hohkawa Kohji

    IEICE ELECTRONICS EXPRESS   2 ( 19 )   501 - 505   2005.10( ISSN:1349-2543

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/elex.2.501

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  • Side-gate effects on transfer characteristics in GaN-based transversal filters Reviewed

    Shigekawa N, Nishimura K, Yokoyama H, Hohkawa K

    APPLIED PHYSICS LETTERS   87 ( 8 )   1 - 84102   2005.08( ISSN:0003-6951

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2033140

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  • Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Reviewed

    Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N

    SOLID-STATE ELECTRONICS   49 ( 8 )   1352 - 1360   2005.08( ISSN:0038-1101

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sse.2005.05.009

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  • Al/AlN/InP metal-insulator-semiconductor-diode characteristics with amorphous AlN films deposited by electron-cyclotron-resonance sputtering Reviewed

    Saito K, Ono T, Shimada M, Shigekawa N, Enoki T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 1A )   334 - 342   2005.01( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.44.334

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  • Temperature dependence of surface acoustic wave characteristics of GaN layers on sapphire substrates Reviewed

    Nishimura K, Shigekawa N, Yokoyama H, Hohkawa K

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 16-19 )   564 - 565   2005( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/jjap.44.L564

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  • AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers Reviewed

    Shiojima K, Makimura T, Kosugi T, Sugitani S, Shigekawa N, Ishikawa H, Egawa T

    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7   2 ( 7 )   2623 - 2626   2005( ISSN:1610-1634

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200461347

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  • Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors Reviewed

    Suemitsu T, Shiojima K, Makimura T, Shigekawa N

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   211 - 213   2005( ISSN:0021-4922|1347-4065

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/jjap.44.L211

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▼display all

Books and Other Publications

  • 異種材料の接着・接合技術とマルチマテリアル化

    重川 直輝( Role: Contributor ,  第10章「無機材料の低温、常温接合技術」第2節「常温異種材料接合技術によるパワー半導体、太陽電池の開発」)

    技術情報協会  2017.10  ( ISBN:978-4-86104-682-7

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    Total pages:633   Responsible for pages:8   Book type:Scholarly book

MISC

  • X on Diamond Structures Fabricated Using Surface Activated Bonding Technologies Invited International journal

    19 ( 2 )   1 - 9   2022.12

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    Authorship:Lead author, Corresponding author   Publishing type:Article, review, commentary, editorial, etc. (other)   International / domestic magazine:Domestic journal  

  • Direct Bonding of Diamond and Dissimilar Materials at Room Temperature Invited International journal

    Liang Jianbo, Ohno Yutaka, Shigekawa Naoteru

    Materia Japan   61 ( 6 )   334 - 339   2022.06( ISSN:13402625 ( eISSN:18845843

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    Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Kind of work:Joint Work   International / domestic magazine:Domestic journal  

    DOI: 10.2320/materia.61.334

  • ダイヤモンドと異種材料の直接接合による超耐熱マテリアルの開発とその応用について Invited International journal

    梁 剣波, 重川 直輝

    月刊マテリアルステージ   3   67 - 70   2022

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    Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Kind of work:Joint Work   International / domestic magazine:Domestic journal  

  • Nanostructural analysis of Al/ß-Ga<inf>2</inf>O<inf>3</inf> interface fabricated using surface activated bonding Reviewed

    Wan Z.

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10( ISBN:9781665405676

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    Authorship:Last author   Publishing type:Research paper, summary (international conference)   Kind of work:Joint Work  

    DOI: 10.1109/LTB-3D53950.2021.9598385

  • High temperature stability of p<sup>+</sup>-Si/p-diamond heterojunction diodes Reviewed

    Uehigashi Y.

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10( ISBN:9781665405676

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    Authorship:Last author, Corresponding author   Publishing type:Research paper, summary (international conference)   Kind of work:Joint Work  

    DOI: 10.1109/LTB-3D53950.2021.9598364

  • Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device Reviewed

    Kagawa R.

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10( ISBN:9781665405676

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    Publishing type:Research paper, summary (international conference)   Kind of work:Joint Work  

    DOI: 10.1109/LTB-3D53950.2021.9598453

  • Fabrication of Ga<inf>2</inf>O<inf>3</inf>/3C-SiC direct bonding for efficient surface heat dissipation Reviewed

    Nagai H.

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10( ISBN:9781665405676

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    Publishing type:Research paper, summary (international conference)  

    DOI: 10.1109/LTB-3D53950.2021.9598380

  • Preface

    Shigekawa N.

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021   2021.10( ISBN:9781665405676

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    Publishing type:Meeting report  

    DOI: 10.1109/LTB-3D53950.2021.9598376

  • 表面活性化接合法による厚膜・低損失配線の実現 Invited

    重川 直輝, 梁 剣波, 前澤 宏一

    ケミカルエンジニヤリング(化学工業社)   65 ( 11 )   686 - 693   2020.11

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Joint Work  

  • 高効率パワー素子の実現に向けたダイヤモンドと異種材料の直接接合技術の開発 Invited

    梁 剣波、重川 直輝

    ケミカルエンジニヤリング(化学工業社)   65 ( 8 )   469 - 474   2020.08

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Joint Work  

  • ダイヤモンドと異種材料の直接接合による高効率デバイスの実現 Invited

    梁 剣波, 重川 直輝

    月刊JETI   68 ( 6 )   37 - 40   2020.06

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Joint Work  

  • A polyimide film/aluminum foil junction by modified surface activated bonding Reviewed

    Akazawa H.

    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05( ISBN:9784904743072

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    Authorship:Last author, Corresponding author   Publishing type:Research paper, summary (international conference)  

    DOI: 10.23919/LTB-3D.2019.8735220

  • Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature Reviewed

    Ohno Y.

    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05( ISBN:9784904743072

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    Publishing type:Research paper, summary (international conference)   Kind of work:Joint Work  

    DOI: 10.23919/LTB-3D.2019.8735300

  • Electrical properties of p Ga Aspatterned metal layer/n Si junctions Reviewed

    Hishida T.

    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05( ISBN:9784904743072

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    Authorship:Last author, Corresponding author   Publishing type:Research paper, summary (international conference)  

    DOI: 10.23919/LTB-3D.2019.8735232

  • Directly bonded n InGaP/n Si junctions with a low interface resistance Reviewed

    Sakihara M.

    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05( ISBN:9784904743072

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    Authorship:Last author, Corresponding author   Publishing type:Research paper, summary (international conference)  

    DOI: 10.23919/LTB-3D.2019.8735389

  • Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam Reviewed

    Ohno Y.

    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019   2019.05( ISBN:9784904743072

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    Publishing type:Research paper, summary (international conference)  

    DOI: 10.23919/LTB-3D.2019.8735379

  • 次世代エレクトロニクスを拓くダイヤモンドと異種材料の直接接合 Invited

    重川直輝, 梁剣波

    New Diamond   34 ( 4 )   3 - 5   2018.10

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Joint Work  

  • Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature Reviewed

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   4   2017

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  • Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells Reviewed

    2017 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP)   229 - 231   2017

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  • Transport Characteristics of Optically-Excited and Electrically-Injected Minority Electrons across p-Si/n-SiC Hetero-Interfaces Reviewed

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   26   2017

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  • Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells Reviewed

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   52   2017

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  • Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions Reviewed

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   77   2017

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  • Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding Reviewed

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   51   2017

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  • Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding Reviewed

    2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   68   2017

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  • Electrical characteristics of SAB-Based n(+)-n Ge/4H-SiC heterojunctions Reviewed

    2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   74 - 75   2016

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  • Effects of Ar beam irradiation on Si-Based Schottky contacts Reviewed

    2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   40 - 41   2016

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  • Effects of layered CdTe nano particles on Si solar cells Reviewed

    2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   114 - 115   2016

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  • Electrical characteristics of Al foil/Si junctions by surface activated bonding method Reviewed

    2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   86 - 87   2016

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  • Interface characteristics of Si/Si junctions by using surface-activated bonding Reviewed

    Yamajo S., Liang J., Morimoto M., Shigekawa N.

    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   62 - 63   2015

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2015.7158550

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  • Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding Reviewed

    Shimizu S., Liang J., Nishida S., Shigekawa N., Morimoto M.

    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   64 - 65   2015

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2015.7158551

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  • Electrical characterization of GaAs/GaAs bonding interfaces Reviewed

    Chai L., Nishida S., Liang J., Shigekawa N., Morimoto M.

    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   44 - 45   2015

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2015.7158541

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  • Electrical properties of n(+)-Si/n-GaN junctions by room temperature bonding Reviewed

    Nishimura T., Shigekawa N., Liang J., Watanabe N.

    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   46 - 47   2015

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2015.7158542

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  • Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing Reviewed

    Hayashi T., Nishida S., Liang J., Arai M., Shigekawa N.

    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   2014

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2014.6867070

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  • Investigation on the effects of annealing process on the electrical properties of n(+)-Si/n-SiC junctions Reviewed

    Liang Jianbo, Nishida Shota, Hayashi Tomohiro, Morimoto Masashi, Shigekawa Naoteru, Arai Manabu

    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   53   2014

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/LTB-3D.2014.6886192

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  • Fabrication and Characterization of Si/similar to 10-mu m Mesa-Etched Si Junctions by Surface Activated Bonding Reviewed

    Takemura K., Nishida S., Morimoto M., Shigekawa N., Liang J.

    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   2014

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2014.6867078

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  • Annealing Characteristics of p(+)-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding Reviewed

    Nishida S., Liang J., Hayashi T., Morimoto M., Shigekawa N., Arai M.

    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   54   2014

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/LTB-3D.2014.6886193

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  • Annealing temperature dependence of SAB based Si/Si junctions Reviewed

    Morimoto M., Liang J., Nishida S., Li Chai., Takemura K., Shigekawa N.

    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   52   2014

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/LTB-3D.2014.6886191

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  • Effects of Annealing on GaAs/Si Bonding Interfaces for Hybrid Tandem Solar Cells Reviewed

    Chai L., Liang J., Nishida S., Morimoto M., Shigekawa N.

    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)   2014

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/IMFEDK.2014.6867079

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  • Type II band lineup in SAB-Based GaAs/Si Heterojunctions Reviewed

    2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013)   2013

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  • Continuous-wave Terahertz Spectroscopic Imaging at over 1 THz for Pharmaceutical Applications Reviewed

    35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)   2010

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  • 25-Gbit/s RECEIVER OPTICAL SUBASSEMBLY USING MAXIMIZED-INDUCED-CURRENT PHOTODIODE Reviewed

    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010( ISSN:1092-8669

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  • A CAN-type MIC-PD ROSA operating at 40-Gbit/s Reviewed

    2010 36TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATION (ECOC), VOLS 1 AND 2   2010

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  • COMPOSITE-FIELD MIC-PDS FOR LOW-BIAS-VOLTAGE OPERATION Reviewed

    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010( ISSN:1092-8669

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  • ULTRA-THIN InAIP/InGaAs HETEROJUNCTIONS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY Reviewed

    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)   222 - +   2009( ISSN:1092-8669

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Single Work  

    DOI: 10.1109/ICIPRM.2009.5012488

  • Single Phase Transducer Consisting of AlGaN/GaN Reviewed

    HOHKAWA Kohji, OSHIYAMA Satoshi, TERAO Yuji, KOH Keishin, NISHIMURA Kazumi, SHIGEKAWA Naoteru

    2008 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4 AND APPENDIX   2008 Vol.4   1928 - 1931   2008( ISSN:1051-0117

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/ULTSYM.2008.0475

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  • Wideband Layer Mode Acoustic Devices on GaN/Sapphire Substrate Reviewed

    2006 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-5, PROCEEDINGS   2301 - +   2006( ISSN:1051-0117

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  • Basic Study on SAW Device with Semiconductor Layer as IDTs and Control Means for Variable Operation Reviewed

    2006 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-5, PROCEEDINGS   2314 - +   2006( ISSN:1051-0117

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  • AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation Reviewed

    2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5   1331 - +   2006( ISSN:0149-645X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Kind of work:Single Work  

    DOI: 10.1109/MWSYM.2006.249494

  • Transfer effects of induced carriers by SAW Reviewed

    KANESHIRO C., KOH K., HOHKAWA K., NISHIMURA K., SHIGEKAWA N.

    2005 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4   2005 Vol.4   1896 - 1899   2005( ISSN:1051-0117

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    DOI: 10.1109/ULTSYM.2005.1603243

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  • Layer mode devices on epitaxially grown GaN films on Al2O3 Reviewed

    HOHKAWA K., KANESHIRO C., KOH K., NISHIMURA K., SHIGEKAWA N.

    2005 IEEE Ultrasonics Symposium, Vols 1-4   2005 Vol.3   1600 - 1603   2005( ISSN:1051-0117

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    DOI: 10.1109/ULTSYM.2005.1603167

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  • Study on photo-induced acoustic charge transport effect in GaN film Reviewed

    HOHKAWA K, KANESHIRO C, KOH K, NISHIMURU K, SHIGEKAWA N

    2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4   421 - 424   2005( ISSN:0149-645X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1109/MWSYM.2005.1516618

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Presentations

  • GaN HEMT on-diamond構造の作製及び特性評価 Domestic conference

    早川 譲稀, 大野 裕, 永井 康介, 重川 直輝, 梁 剣波

    第70回応用物理学会春季学術講演会  2023.03  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:東京  

  • α-Ga2O3/4H-SiC直接接合の作製と界面構造の評価 Domestic conference

    山本 誠志郎, 大島 祐一, 大野 裕, 永井 康介, 重川 直輝, 梁 剣波

    第70回応用物理学会春季学術講演会  2023.03  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:東京  

  • High Performance GaN-on-Diamond Devices Fabrication using Diamond Wafer Bonding Technology Invited International conference

    Jianbo Liang, Yutaka Ohno and Naoteru Shigekawa

    Hasselt Diamond Workshop 2023 - SBDD XXVII  2023.03 

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    Presentation type:Oral presentation (invited, special)  

    Venue:Hasselt, Belgium  

  • 転位発生源となるシリコン非対称傾角粒界の形成過程 Domestic conference

    大野 裕, 斉藤 光, 梁 剣波, 横井 達矢, 松永 克志, 重川 直輝, 井上 耕治, 永井 康介, 波多 聰

    第70回応用物理学会春季学術講演会  2023.03  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:東京  

  • Characterization of GaN/GaN interfaces fabricated by surface-activated bonding International conference

    Kazuki Sawai, Jianbo liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanoparticles (ISPlasma2023)  2023.03  Japan Society of Applied Physics

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    Presentation type:Oral presentation (general)  

    Venue:Gifu, Japan  

  • Direct wafer bonding of nitride and its application for advanced devices Invited International conference

    Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

    15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanoparticles (ISPlasma2023)  2023.03  Japan Society of Applied Physics

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    Presentation type:Oral presentation (invited, special)  

    Venue:Gifu, Japan  

  • Effects of thick luminescent down-shifting layers with ZnSe/ZnS:Mn/ZnS nanoparticles on Si solar cells International conference

    Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu Shim, Naoteru Shigekawa

    33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11  The Japan Photovoltaic Society (J-PVS)

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    Presentation type:Poster presentation  

    Venue:Nagoya, Japan  

  • Fabrication and electrical characterization of n+-Si/p-diamond heterojunction diodes Domestic conference

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

    The 41st Electronic Materials Symposium  2022.10 

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    Presentation type:Poster presentation  

  • X-on-Diamond Structures on Bonding-First Concept and Their Application to Advanced Devices Invited Domestic conference

    Naoteru Shigekawa, Jianbo Liang, Yutaka Ohno

    The 41st Electronic Materials Symposium  2022.10 

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    Presentation type:Oral presentation (invited, special)  

  • Fabrication of High-Thermal-Stability GaN/Diamond Junctions via Intermediate Layers International conference

    Jianbo Liang, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa

    Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration (WaferBond '22)  2022.10 

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    Presentation type:Poster presentation  

    Venue:Schmalkalden, Germany  

  • n+-Si/p-ダイヤモンドヘテロ接合ダイオードの耐熱性評価 Domestic conference

    上東 洋太, 大曲 新矢, 梅沢 仁, 山田 英明, 梁 剣波, 重川 直輝

    2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:仙台  

  • 表面活性化接合法によるGaN/GaN接合界面の評価 Domestic conference

    澤井 一樹, 梁 剣波, 清水 康雄, 大野 裕, 永井 康介, 重川 直輝

    2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:仙台  

  • 高出力デバイス応用に向けたGaN/3C-SiC on-diamond HEMT構造の作製 Domestic conference

    香川 諒, 重川 直輝, 梁 剣波, 川村 啓介, 坂井田 佳紀, 大内 澄人, 浦谷 泰基, 清水 康夫, 大野 裕, 長井 康介

    2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:仙台  

  • Si太陽電池に対する高光学密度半導体ナノ粒子膜の堆積効果 Domestic conference

    粟井 啓伍, 井筒 由紀, 梁 剣波, 西村 悠陽, 金 大貴, 沈 用球, 重川 直輝

    2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:仙台  

  • 表面活性化接合法で作製したn-Si/n-Siおよびp-Si/p-Si接合の二重バイアス変調静電引力顕微鏡による評価 Domestic conference

    小林 大地, 梁 剣波, 重川 直輝, 高橋 琢二

    2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:仙台  

  • パワー素子の放熱向上に向けたGa2O3/3C-SiC直接接合の特性評価 Domestic conference

    長井 啓, 川村 啓介, 浦谷 泰基, 坂井田 佳紀, 重川 直輝, 梁 剣波

    2022年第83回応用物理学会秋季学術講演会  2022.09  応用物理学会

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    Presentation type:Oral presentation (general)  

    Venue:仙台  

  • Dual Bias Modulation Electrostatic Force Microscopy on n-type Si/Si Junctions Fabricated by Surface-activated Bonding International conference

    Daichi Kobayashi, Naoteru Shigekawa, Jianbo Liang, Takuji Takahashi

    The 22nd International Vacuum Congress (IVC-22)  2022.09  The Japan Society of Vacuum and Surface Science

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    Presentation type:Oral presentation (general)  

    Venue:Sapporo, Japan  

  • Electrical properties in wafer-bonding-based GaAs/GaN junctions on free-standing substrates International conference

    M. Hirose, S. Ishimi, Y. Shimizu, Y. Ohno, Y. Nagai, J. Liang, N. Shigekawa

    14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022)  2022.08  The Institute of Electronics, Information and Communication Engineers

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    Presentation type:Poster presentation  

    Venue:Hiroshima, Japan  

  • Nano-structural and electro-thermal analyses of AlGaN/GaN/3C-SiC on diamond HEMTs prepared by bonding-first process International conference

    R. Kagawa, K. Kawamura, Y. Sakaida,S. Ouchi,H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang

    14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022)  2022.08  The Institute of Electronics, Information and Communication Engineers

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    Presentation type:Poster presentation  

    Venue:Hiroshima, Japan  

  • Thermal Annealing Effect on the Structure of GaN/Diamond Bonding Interface International conference

    Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    15th International Conference on New Diamond and Nano Carbons 2022 (NDNC 2022)  2022.06 

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    Presentation type:Oral presentation (general)  

    Venue:Kanazawa  

  • Fabrication and electrical characterization of n+-Si/p-diamond heterojunction diodes International conference

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

    15th International Conference on New Diamond and Nano Carbons 2022 (NDNC 2022)  2022.06 

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    Presentation type:Oral presentation (general)  

    Venue:Kanazawa, Japan  

  • 周波数変調型静電引力顕微鏡法によるキャリア密度の定量測定 Domestic conference

    福澤 亮太, 梁 剣波, 重川 直輝, 高橋 琢二

    2022年 第69回応用物理学会春季学術講演会  2022.03 

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    Presentation type:Oral presentation (general)  

  • n+-Si/p-ダイヤモンドヘテロ接合ダイオードの作製と電気特性評価 Domestic conference

    上東 洋太, 大曲 新矢, 梅沢 仁, 山田 英明, 梁 剣波, 重川 直輝

    2022年 第69回応用物理学会春季学術講演会  2022.03 

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    Presentation type:Oral presentation (general)  

  • ウェハ直接接合による自立基板上n-GaNエピ層/p-GaAs接合の光電流測定 Domestic conference

    石見 翔太, 廣瀬 淳, 梁 剣波, 重川 直輝

    2022年 第69回応用物理学会春季学術講演会  2022.03 

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    Presentation type:Oral presentation (general)  

  • GaN/ダイヤモンド接合界面の特性評価 Domestic conference

    梁 剣波, 清水 康雄, 大野 裕, 永井 康介, 重川 直輝

    2022年 第69回応用物理学会春季学術講演会  2022.03 

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    Presentation type:Oral presentation (general)  

  • Direct bonding of diamond for fabricating advanced electron devices Invited Domestic conference

    Naoteru Shigekawa, Jianbo Liang

    第1回ダイヤモンドデバイス国際ワークショップ  2022.02 

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    Presentation type:Oral presentation (general)  

  • Research and development of high-thermal-tolerance interfaces fabricated using direct bonding of diamond Invited Domestic conference

    Naoteru Shigekawa

    2022.02 

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    Presentation type:Oral presentation (general)  

  • 表面活性化接合によるIII-V/Si界面創成及びその多接合太陽電池応用 Invited Domestic conference

    重川直輝, 梁 剣波

    日本太陽光発電学会次世代太陽電池セル・モジュール分科会2021年度第2回研究会  2022.01 

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    Presentation type:Oral presentation (invited, special)  

  • Fabrication and Characterization of GaN/Diamond bonding interface International conference

    A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598383

  • Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation International conference

    H. Nagai, K. Kawamura, Y. Sakaida, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598380

  • Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates International conference

    Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598401

  • Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding International conference

    Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598452

  • Fabrication of beta-Ga2O3/Si direct bonding interface for high power device applications International conference

    Jianbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598435

  • Nanostructural Analysis of Al/beta-Ga2O3 Interface Fabricated Using Surface Activated Bonding International conference

    Zexin Wan, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598385

  • Fabrication of GaN/SiC/diamond structure for efficient thermal management of power devices International conference

    Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida,Sumito Ouchi,Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598453

  • Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature International conference

    Yutaka Ohno, Jianbo Liang, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi Nagai, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    Presentation type:Oral presentation (general)  

    DOI: 10.1109/LTB-3D53950.2021.9598382

  • High temperature stability of p+-Si/p-diamond heterojunction diodes International conference

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

    2021 7th International Workshop on Low Temperature Bonding for 3D Integration  2021.10 

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    DOI: 10.1109/LTB-3D53950.2021.9598364

  • 半導体異種材料接合の研究 Invited Domestic conference

    重川 直輝

    文部科学省ナノテクノロジープラットフォーム令和3年度利用成果発表会  2021.09 

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  • Fabrication and Structural Characterization of Ga2O3/Si Heterostructure Domestic conference

    Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa, Jianbo Liang

    The 82nd JSAP Autumn Meeting 2021  2021.09 

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  • Evaluation of thermal stability of Si/diamond heterojunction diodes Domestic conference

    Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa

    The 82nd JSAP Autumn Meeting 2021  2021.09 

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  • Noncontact resistance force microscopy using external modulation of joule heating Domestic conference

    Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa, Takuji Takahashi

    The 82nd JSAP Autumn Meeting 2021  2021.09 

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  • Modification of solar cell characteristics by depositing semiconductor nanoparticle films with high optical density Domestic conference

    K. Awai, Y. Idutsu, J. Liang, H. Nishimura, D.G. Kim, Y.G Shim, N. Shigekawa

    The 82nd JSAP Autumn Meeting 2021  2021.09 

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  • Direct bonding of diamond to semiconductors and metals for low thermal resistance modules Invited International conference

    Naoteru Shigekawa, Jianbo Liang

    International Conference on Diamond and Carbon Materials 2021  2021.09 

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    Presentation type:Oral presentation (invited, special)  

  • III-V compound semiconductor/Si hybrid tandem solar cells Invited Domestic conference

    Naoteru Shigekawa

    2021.06 

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  • Low-temperature direct wafer bonding innovating CS device technologies Invited International conference

    Naoteru Shigekawa, Jianbo Liang

    International Conference on Compound Semiconductor Manufacturing Technology  2021.05 

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    Presentation type:Oral presentation (keynote)  

  • 表面活性化接合法によるダイヤモンド/Si ヘテロ接合ダイオードの作製 Domestic conference

    上東 洋太、大曲 新矢、梅沢 仁、山田 英明、梁 剣波、重川 直輝

    2021年 第68回応用物理学会春季学術講演会  2021.03 

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  • ラマン分光法によるGaN/ダイヤモンド接合界面の残留応力評価 Domestic conference

    小林 礼佳、清水 康雄、大野 裕、金 聖祐、小山 浩司、嘉数 誠、重川 直輝、梁 剣波

    2021年 第68回応用物理学会春季学術講演会  2021.03 

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  • 波長変換ナノ粒子ZnSe/ZnS:Mn/ZnSの付加による太陽電池特性の向上 II Domestic conference

    西村 悠陽、前川 貴哉、高木 知己、祖父江 進、川井 正一、重川 直輝、金 大貴

    2021年 第68回応用物理学会春季学術講演会  2021.03 

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  • 二重バイアス変調静電引力顕微鏡による直接貼り合わせp-n接合の断面解析 Domestic conference

    福澤 亮太、梁 剣波、重川 直輝、高橋 琢二

    2021年 第68回応用物理学会春季学術講演会  2021.03 

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  • 表面活性化法による異種半導体直接接合界面の電気特性と太陽電池応用 Invited Domestic conference

    重川 直輝

    第5回 3次元積層半導体量子イメージセンサ研究会(TIA連携プログラム探索推進事業「かけはし」:「究極の広帯域量子イメージセンサ実現を目指して」グループ)  2021.02 

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  • Microscopic Picture of Direct Bonding Via Surface Activation for Low-Resistance Si/Wide-Gap Semiconductor Heterointerface International conference

    Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, Y. Nagai

    ECS PRiME 2020  2020.10 

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  • Direct Bonding of GaAs and Diamond for High Power Device Applications International conference

    J. Liang, Y. Nakamura, Y. Ohno, Y. Shimizu, T. Zhan, T. Watanabe, N. Kamiuchi, Y. Nagai, N. Shigekawa

    ECS PRiME 2020  2020.10 

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  • III-V Thin-Film Solar Cells Bonded to Si Substrates via Metal Grids International conference

    T. Hishida, J. Liang, N. Shigekawa

    ECS PRiME 2020  2020.10 

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  • Nanostructural Investigation on GaAs//Indium Tin Oxide/Si Junctions for III-V-on-Si Hybrid Multijunction Cells International conference

    T. Hara, J. Liang, K. Araki, T. Kamioka, H. Sodabanlu, K. Watanabe, M. Sugiyama, N. Shigekawa

    ECS PRiME 2020  2020.10 

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  • 低温FIB-断面STEM法によるSi/Diamond表面活性化接合界面の構造評価 Domestic conference

    大野 裕、梁 剣波、吉田 秀人、清水 康雄、永井 康介、重川 直輝

    2020年第81回応用物理学会秋季学術講演会  2020.09 

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  • ラマン分光法によるGa2O3ショットキーバリアダイオードの自己発熱評価 Domestic conference

    6. 万 澤欣、高月 大輝、林 家弘、梁 剣波、東脇 正高、重川 直輝

    2020年第81回応用物理学会秋季学術講演会  2020.09 

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  • Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped International conference

    Y.Idutsu, J.Liang, H.Nishimura, D.G.Kim, N.Shigekawa

    ECS PRiME 2020  2020.06 

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  • Ga2O3/3C-SiC接合界面の作製及び特性評価 Domestic conference

    梁 剣波, 清水 康雄, 大野 裕, 重川 直輝

    2020年 第67回応用物理学会春季学術講演会  2020.03 

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  • GaN/多結晶ダイヤモンド直接接合の作製及び特性評価 Domestic conference

    小林 礼佳, 清水 康雄, 大野 裕, 金 聖祐, 小山 浩司, 嘉数 誠, 重川 直輝, 梁 剣波

    2020年 第67回応用物理学会春季学術講演会  2020.03 

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  • 自立基板上GaNエピ層/GaAs直接接合界面のナノ構造評価 Domestic conference

    廣瀬 淳, 清水 康雄, 大野 裕, 梁 剣波, 重川 直輝

    2020年 第67回応用物理学会春季学術講演会  2020.03 

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  • Si太陽電池に対するZnSe/ZnS:Mn/ZnS core/shellナノ粒子の堆積効果 Domestic conference

    井筒 由紀, 梁 剣波, 西村 悠陽, 金 大貴, 重川 直輝

    2020年 第67回応用物理学会春季学術講演会  2020.03 

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  • GaAs//Si Hybrid Double Junction Cells Fabricated by Direct Bonding of Epitaxially Lifted-Off GaAs Subcell Layers on PET Films International conference

    Ryo Kozono, Jianbo Liang, Kentaroh Watanabe, Masakazu Sugiyama, Naoteru Shigekawa

    29th International Photovoltaic Science and Engineering Conference  2019.11 

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  • Si太陽電池に対するMnドープ半導体ナノ粒子の堆積効果 Domestic conference

    井筒 由紀, 田中 駿, 梁 剣波, 楢崎 友城, 西村 悠陽, 金 大貴, 重川 直輝

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • 表面活性化接合で作成したSi/GaAs界面の低温FIB法による断面TEM評価 Domestic conference

    大野 裕, 清水 康雄, 永井 康介, 麻生 亮太郎, 神内 真人, 吉田 秀人, 梁 剣波, 重川 直輝

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • 直接接合された表面実装型LEDパッケージにおける素子温度評価 Domestic conference

    小丸 啓吾, 梁 剣波, 西尾 佳高, 重川 直輝

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • ELO法及びSAB法によるGaAs/Si 2接合太陽電池の作製 Domestic conference

    小園 亮, 梁 剣波, 渡辺 健太郎, 杉山 正和, 重川 直輝

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • 表面活性化接合で形成したSi/GaAs界面の低温FIB法によるアトムプローブ評価 Domestic conference

    清水 康雄, 海老澤 直樹, 大野 裕, 梁 剣波, 重川 直輝, 永井 康介

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • GaAs/Diamond直接接合の界面評価 Domestic conference

    中村 祐志, 清水 康雄, 大野 裕, 詹 天卓, 山下 雄一郎, 白崎 謙次, 永井 康介, 渡邊 孝信, 嘉数 誠, 重川 直輝, 梁 剣波

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • 高出力パワーデバイス応用に向けたGaN/Diamond直接接合の作製 Domestic conference

    梁 剣波, 清水 康雄, 大野 裕, 白崎 謙次, 永井 康介, 嘉数 誠, 金 聖祐, Kuball Martin, 重川 直輝

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • InGaP/ITO 界面における熱処理効果 Domestic conference

    崎原 盛偉, 梁 剣波, 重川 直輝

    2019年第80回応用物理学会秋季学術講演会  2019.09 

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  • Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications International conference

    J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu, M. Kuball, and N. Shigekawa

    13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)  2019.08 

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  • Fabrication of GaAs/diamond direct bonding for high power device applications International conference

    Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang

    13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)  2019.08 

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  • Electrical Properties of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates International conference

    Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

    13th International Conference on Nitride Semiconductors 2019  2019.07 

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  • Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature International conference

    Jianbo Liang, Makoto Kasu, Martin Kuball, Naoteru Shigekawa

    13th International Conference on Nitride Semiconductors 2019  2019.07 

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  • Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells International conference

    Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, and N.Shigekawa

    46TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2019.06 

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  • GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions International conference

    Ryo Kozono, Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    46TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2019.06 

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  • Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions International conference

    T. Hishida, J. Liang, and N. Shigekawa

    2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

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  • Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding International conference

    S. Horikawa, S. Morita, J. Liang, Y. Kaneko, Y. Nishio, M. Matsubara, H. Asahi, and N. Shigekawa

    2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

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  • Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance International conference

    M. Sakihara, J. Liang, and N. Shigekawa

    2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

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  • Fabrication of Diamond/Cu Direct Bonding for Power Device Application International conference

    S. Kanda, S. Masuya, M. Kasu, N. Shigekawa, and J. Liang

    2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

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  • Effect of annealing temperature on diamond/Si interfacial structure International conference

    J. Liang, Y. Zhou, S. Masuya ; F. Gucmann, M. Singh, J. Pomeroy, S. Kim, M. Kuball, M. Kasu, N. Shigekawa

    2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

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  • Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS International conference

    Z. Wan, J. Liang, and N. Shigekawa

    2019 6th International Workshop on Low Temperature Bonding for 3D Integration  2019.05 

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  • Direct bonding of diamond and Cu at room temperature for power device application International conference

    Jianbo Liang, Naoteru Shigekawa, et al.

    13th New Diamond and Nano Carbons Conference (NDNC 2019)  2019.05 

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  • パワーデバイス応⽤に向けたダイヤモンド/Cu直接接合の形成 Domestic conference

    梁 剣波, 神⽥ 進司, 桝⾕ 聡⼠, 嘉数 誠, 重川 直輝

    2019年 第66回応用物理学会春季学術講演会  2019.03 

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  • 表⾯活性化接合によるGaAs/GaAs界⾯における元素分布評価 Domestic conference

    清⽔ 康雄, 海⽼澤 直樹, ⼤野 裕, 梁 剣波, 重川 直輝, 井上 耕治, 永井 康介

    2019年 第66回応用物理学会春季学術講演会  2019.03 

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  • ⾼出⼒デバイス応⽤に向けたGaAs/Diamond直接接合の作製 Domestic conference

    中村 祐志, 桝⾕ 聡⼠, 嘉数 誠, 重川 直輝, 梁 剣波

    2019年 第66回応用物理学会春季学術講演会  2019.03 

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  • XPSによるSiC/Si接合界⾯の熱処理効果の評価 Domestic conference

    万 澤欣, 梁 剣波, 重川 直輝

    2019年 第66回応用物理学会春季学術講演会  2019.03 

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  • Ⅲ-Ⅴ族/Si太陽電池の界面特性改善に向けたパターニング金属中間層の導入(2) Domestic conference

    菱⽥ 貴史, 梁 剣波, 重川 直輝

    2019年 第66回応用物理学会春季学術講演会  2019.03 

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  • 表面活性化接合法によるAl箔/AlN接合の接合強度評価 Domestic conference

    堀川昇太朗, 森田匠, 梁剣波, 兼子佳久, 西尾佳高, 松原萌子, 旭洋, 重川直輝

    2019年 第66回応用物理学会春季学術講演会  2019.03 

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  • Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates Invited Domestic conference

    K. Matsuura, J. Liang, K. Maezawa, and N. Shigekawa

    第18回 関西コロキアム電子デバイスワークショップ  2019.01 

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  • TEM characterization of GaAs/GaN heterointerface fabricated by surface activated bonding International conference

    Shoji Yamajo, Jianbo Liang, Naoteru Shigekawa

    International Workshop on Nitride Semiconductors (IWN 2018)  2018.11 

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  • p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interfaces for high thermal tolerance International conference

    Shunichi Kono, Jianbo Liang, Naoteru Shigekawa

    International Workshop on Nitride Semiconductors (IWN 2018)  2018.11 

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  • Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding International conference

    S. Morita, J. Liang, N. Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AIMES2018)  2018.09 

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  • Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface Activated Bonding International conference

    J. Liang, Y. Zhou, S. Yamajo, M. Arai, M. Kuball, N. Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AIMES2018)  2018.09 

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  • Atomistic Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated Bonding at Room Temperature International conference

    Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa

    Americas International Meeting on Electrochemistry and Solid State Science (AIMES2018)  2018.09 

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  • Si太陽電池特性に対する半導体ナノ粒子の堆積効果(2)-層数依存性 Domestic conference

    田中 駿, 楢崎 友城, 梁 剣波, 金 大貴, 重川 直輝

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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  • Siと接合したダイヤモンド基板上のFETの作製 Domestic conference

    神田 進司, 山條 翔二, Martin Kuball, 重川 直輝, 梁 剣波

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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  • GaAs//ITO/Si接合におけるGaAs薄層//ITO界面の硬X線電子分光評価 Domestic conference

    原 智也, 梁 剣波, 荒木 健次, 神岡 武文, ソダーバンル ハッサネット, 渡辺 健太郎, 杉山 正和, 重川 直輝

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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  • 表面活性化接合及び犠牲層エッチングによるGaAs/Si 2接合太陽電池の作製 Domestic conference

    小園 亮, 尹 翔至, 梁 剣波, 重川 直輝

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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  • III-V族/Si太陽電池の界面特性改善に向けた パターニング金属中間層の導入 Domestic conference

    菱田 貴史, 梁 剣波, 重川 直輝

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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  • Ar 高速原子ビームのスパッタリング効果を用いたpolyimide/Al 接合の実現 Domestic conference

    赤澤 秀征, 梁 剣波, 松原 萌子, ダムリン マルワン, 西尾 佳高, 重川 直輝

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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  • Si基板に対するArビーム照射効果の基板温度依存性 Domestic conference

    松本 祐二, 梁 剣波, 重川 直輝

    2018年第79回応⽤物理学会秋季学術講演会  2018.09 

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    Presentation type:Poster presentation  

  • 金属箔直接接合による低損失インダクタのRF特性評価 Domestic conference

    松浦圭汰, 梁 剣波, 前澤宏一, 重川直輝

    2018年電子情報通信学会ソサイエティ大会  2018.09 

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  • Fabrication of Si//patterned metal layer/Si junctions for hybrid multijunction solar cells with improved bonding interface properties International conference

    T. Hishida, J. Liang, N. Shigekawa

    2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018)  2018.06 

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  • Dependence of characteristics of directly-bonded SiC/Si junctions on bonding temperature International conference

    K. Shimozato, J. Liang, M. Arai, N. Shigekawa

    2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018)  2018.06 

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  • Penetration depth of effects of irradiation of Ar fast atom beams in n-Si surfaces International conference

    Y. Matsumoto, S. Hisamoto, J. Liang, N. Shigekawa

    2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2018)  2018.06 

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  • Room-Temperature Direct Bonding of Diamond to Aluminum International conference

    Jianbo Liang, Shoji Yamajo, Martin Kuball, Naoteru Shigekawa

    New Diamond and Nano Carbons Conference (NDNC 2018)  2018.05 

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  • Hybrid heterostructures and heterostructure devices fabricated by surface activated bonding technologies Invited International conference

    Naoteru Shigekawa

    The 42nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2018)  2018.05 

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    Presentation type:Oral presentation (invited, special)  

  • Interfacial strength and fracture toughness in integrated semiconductor materials International conference

    Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa, Martin Kuball

    2018 International Conference on Compound Semiconductor Manufacturing Technologies  2018.05 

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  • Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価 Domestic conference

    梁 剣波, Zhou Yan, Singh Manikant, Gucmann Filip, Pomeroy James, Kuball Martin, 重川 直輝

    第65回応用物理学会 春季学術講演会  2018.03 

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  • p+-Siをゲート電極とする高耐熱AlGaN/GaN HEMTの作製 Domestic conference

    鴻野 駿一, 梁 剣波, 重川 直輝

    第65回応用物理学会 春季学術講演会  2018.03 

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  • p<sup>+</sup>-Siをゲート電極とする高耐熱AlGaN/GaN HEMTの作製 Domestic conference

    鴻野 駿一, 梁 剣波, 重川 直輝

    第65回応用物理学会 春季学術講演会  2018.03 

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  • 直接接合によるSiC/Si 界面特性の熱処理温度依存性 Domestic conference

    下里 和史, 梁 剣波, 新井 学, 重川 直輝

    第65回応用物理学会 春季学術講演会  2018.03 

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  • Application of surface-activated bonding technologies for III-V-on-Si hybrid multijunction cells Invited International conference

    Naoteru Shigekawa

    EMN Singapore Meeting 2018  2018.01 

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    Presentation type:Oral presentation (invited, special)  

  • 表面活性化接合法によるIII-V-on-Siタンデム太陽電池 Invited Domestic conference

    重川直輝

    学振第175 委員会 次世代シリコン太陽電池分科会 超高効率太陽電池分科会  2017.12 

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  • 表面活性化による異種半導体接合技術とその応用 Invited Domestic conference

    重川直輝

    日本学術振興会 第131委員会  2017.12 

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  • Annealing effects on GaAs/ITO/Si junctions fabricated by surface-activated bonding International conference

    Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa

    27th International Photovoltaic Science and Engineering Conference  2017.11 

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  • GaAs single junction cells on Si substrates fabricated by surface activated bonding and etching of sacrificial layers International conference

    Sanji Yoon, Jianbo Liang, Naoteru Shigekawa

    27th International Photovoltaic Science and Engineering Conference  2017.11 

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  • Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates International conference

    K. Matsuura, J. Liang, K. Maezawa, N. Shigekawa

    2017 International Conference on Solid State Devices and Materials  2017.09 

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  • Impacts of annealing on interfaces of Al foil/Si junctions by using surface activated bonding International conference

    K. Furuna, J. Liang, M. Matsubara, D. Marwan, Y. Nishio, N. Shigekawa

    2017 International Conference on Solid State Devices and Materials  2017.09 

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  • Si基板と接合した単結晶ダイヤモンドの残留応力評価 Domestic conference

    梁 剣波, 重川 直輝, 他

    第78回応用物理学会秋季学術講演会  2017.09 

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  • GaAs/GaN接合を用いたnpn構造の光電流測定 Domestic conference

    山條 翔二, 梁 剣波, ソダーバンル ハッサネット, 渡辺 健太郎, 杉山 正和, 重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

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  • ITOを中間層とするInGaP/GaAs/ITO/Si3接合太陽電池の特性評価 Domestic conference

    原 智也, 小川 智輝, 梁 剣波, 荒木 健次, 神岡 武文, 山口 真史, 重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

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  • 室温表面活性化接合で作成したSi/GaAs界面の熱処理による構造変化 Domestic conference

    大野 裕, 吉田 秀人, 竹田 精治, 梁 剣波, 重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

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  • Si太陽電池特性に対する半導体ナノ粒子の堆積効果 Domestic conference

    田中 駿, 浅川 良介, 小川 智輝, 楢崎 友城, 梁 剣波, 金 大貴, 重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

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  • 犠牲層エッチングによるIII-V族薄層/Si接合の形成 Domestic conference

    尹 翔至, 梁 剣波, 重川 直輝

    第78回応用物理学会秋季学術講演会  2017.09 

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  • Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI International conference

    Jianbo Liang, Naoteru Shigekawa,他

    12th Topical Workshop on Heterostructure Microelectronics  2017.08 

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  • Formation of contacts with high thermal tolerance by using Si/GaN junctions International conference

    Jianbo Liang, Takuya Nishimura, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio, Naoteru Shigekawa

    12th International Conference on Nitride Semiconductors  2017.07 

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  • Measurements of Potentials at Tap Contacts and Estimation of Resistance across Bonding Interfaces in InGaP/GaAs/Si Hybrid Triple-Junction Cells International conference

    Naoteru Shigekawa, Jianbo Liang

    2017 IEEE Photovoltaic Specialists Conference  2017.06 

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  • InGaP/GaAs/ITO/Si Hybrid Triple-Junction Cells with GaAs/ITO Bonding Interfaces International conference

    Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takafumi Kamioka, Kenji Araki, Masafumi Yamaguchi

    2017 IEEE Photovoltaic Specialists Conference  2017.06 

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  • Analysis of the Influence of Interface Charges on the Electrical Characteristics of GaAs/GaN Junctions International conference

    7.S. Yamajo, J. Liang, N. Shigekawa

    2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

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  • Transport Characteristics of Optically-Excited and Electrically-Injected Minority Electrons Across p-Si/n-SiC Hetero-Interfaces International conference

    Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, Manabu Arai

    2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

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  • Electrical Conduction of Si/ITO/Si Junctions Fabricated by Surface Activated Bonding International conference

    Jianbo Liang, Tomoki Ogawa, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa

    2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

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  • Impacts of Bonding-Layer Resistance of Si Bottom Cells on Interface Resistance In InGaP/GaAs/Si Hybrid Triple-Junction Cells International conference

    Naoteru Shigekawa, Jianbo Liang

    2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

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  • Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by Surface-Activated Bonding International conference

    S. Morita, J. Liang, M. Matsubara, M. Dhamrin, Y. Nishio, N. Shigekawa

    2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

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  • Plane-View Transmission Electron Microscopy of Si/GaAs Interfaces Fabricated by Surface-Activated Bonding at Room Temperature International conference

    Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Liang Jianbo, Naoteru Shigekawa

    2017 5th International Workshop on Low Temperature Bonding for 3D Integration  2017.05 

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  • Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating Hybrid Tandem Solar Cells Invited International conference

    Naoteru Shigekawa, Jianbo Liang

    2018 International Conference on Electronics Packaging  2017.04 

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  • Electrical Characterisation of Coupling Properties in InGaP/GaAs/Si Triple-Junction Cells International conference

    26th International Photovoltaic Science and Engineering Conference  2016.10 

  • Effects of Ar beam irradiation on Si-based Schottky contacts Domestic conference

    IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

  • Effects of layered CdTe nano particles on Si solar cells Domestic conference

    IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

  • Electrical characteristics of Al foil/Si junctions by surface activated bonding method Domestic conference

    IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

  • Electrical characteristics of SAB-Based n+-n Ge/4H-SiC heterojunctions Domestic conference

    IEEE 2016 International Meeting for Future of Electron Devices, Kansai  2016.06 

  • GaN 基板上InGaN/GaN MQW 太陽電池における井戸層厚と太陽電池特性 Domestic conference

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    第63回応用物理学会春季学術講演会  2016.03 

  • Si 基板上GaAs/GaN ヘテロ接合の縦方向電気特性評価 Domestic conference

    -

    第63回応用物理学会春季学術講演会  2016.03 

  • GaN/Ga2O3 基板およびGaN 基板に成長したInGaN/GaN MQW 太陽電池特性 Domestic conference

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    第63回応用物理学会春季学術講演会  2016.03 

  • “NH3分解触媒援用MOVPE成長InxGa1-xN(x~0.35)のMgドーピング挙動 Domestic conference

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    第63回応用物理学会春季学術講演会  2016.03 

  • 表面活性化ボンディング法によるAl箔/Si接合の電気特性評価 Domestic conference

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    第63回応用物理学会春季学術講演会  2016.03 

  • 熱処理による4H-SiC/Si HBTの電気特性の改善 Domestic conference

    -

    第63回応用物理学会春季学術講演会  2016.03 

  • III-V-on-Si hybrid tandem cells by room-temperature surface-activated bonding International conference

    EMN Meeting on Photovoltaic 2016  2016.01 

  • Low-resistivity InxGa1-xN (x=0~0.35) grown by low-temperature (≲ 600˚C) MOVPE using NH3 decomposition catalysts Domestic conference

    6th International Symposium on Growth of III-Nitrides  2015.11 

  • 表面活性化ボンディング法に依るSi/SiC接合の電気特性 Domestic conference

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    電子情報通信学会電子デバイス研究会  2015.11 

  • GaAs/GaAs接合の電気特性に対するアニール効果 Domestic conference

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    電子情報通信学会電子デバイス研究会  2015.11 

  • NH3 decomposition catalyst-assisted MOVPE growth of In0.3Ga0.7N for solar cell application International conference

    PVSEC-25  2015.11 

  • Migration-enhanced, low-temperature (~400˚C) MOVPE growth of InN using NH3 decomposition catalysts Domestic conference

    6th International Symposium on Growth of III-Nitrides  2015.11 

  • 常温接合法によるGaAs/4H-SiCヘテロ接合作製及び電気特性評価 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • 界面顕微光応答法によるSi/SiCヘテロp-n接合の2次元評価 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • GaAs/GaAs接合界面の電気特性に対するアニール効果の抽出の試み Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • 表面活性化接合によるp-Si/n-GaN接合の電気特性評価 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • 多接合太陽電池のボトムセル応用のためのSi逆ピラミッド構造の検討 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • NH3分解触媒援用MOVPE法によるInN系材料の低温(~400℃)成長(Ⅱ): InxGa1-xN(x~0.3)の成長 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • NH3分解触媒援用MOVPE法によるInN系材料の低温(~400℃)成長(Ⅰ): InN成長 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by Surface Activated Bonding Domestic conference

    2015 International Conference on Solid State Devices and Materials  2015.09 

  • Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy Domestic conference

    2015 International Conference on Solid State Devices and Materials  2015.09 

  • Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding Domestic conference

    2015 International Conference on Solid State Devices and Materials  2015.09 

  • GaN/Ga2O3テンプレート基板上に成長したInGaN/GaN MQW太陽電池構造 Domestic conference

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    2015年 第76回応用物理学会秋季学術講演会  2015.09 

  • Electrical Properties of Room Temperature Bonded Si/GaN Heterojunctions without Buffer Layers International conference

    11th International Conference on Nitride Semiconductors  2015.09 

  • MOVPE Growth and Device Fabrication of Thick N+-P InGaN with in Composition of 0.3 and No Phase Separation at 600 ºC International conference

    11th International Conference on Nitride Semiconductors  2015.09 

  • Fabrication and characterization of GaAs/4H-SiC junctions by using SAB Domestic conference

    11th Topical Workshop on Heterostructure Microelectronics  2015.08 

  • Band lineups in GaAs/GaN junctions using surfaceactivated bonding Domestic conference

    11th Topical Workshop on Heterostructure Microelectronics  2015.08 

  • Impacts of annealing in N2/H2 ambient on electrical properties of Si/GaN junctions Domestic conference

    11th Topical Workshop on Heterostructure Microelectronics  2015.08 

  • Surface-activated bonding of n+-Si to n-GaN: A possible process for fabricating ohmic contacts to nitrides with smooth surface International conference

    39th Workshop on Compound Semiconductor Devices and Integrated Circuits  2015.06 

  • Impacts of optical properties of anti-reflection coatings on characteristics of InGaP/GaAs/Si hybrid triple-junction cells International conference

    42nd IEEE International Photovoltaic Specialists Conference  2015.06 

  • Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding Domestic conference

    The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Interface characteristics of Si/Si junctions by using surface-activated bonding Domestic conference

    The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Electrical properties of n+-Si/n-GaN junctions by room temperature bonding Domestic conference

    The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

  • Electrical characterization of GaAs/GaAs bonding interfaces Domestic conference

    The 2015 International Meeting for Future of Electron Devices, Kansai  2015.06 

  • SAB 法による4H-SiC/Si HBT構造における少数キャリア注入特性 Domestic conference

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    2015 年第62 回応用物理学会春季学術講演会  2015.03 

  • MOVPE 法によるn+-p 構造InxGa1-xN (x~0.3)光起電力素子の作製 Domestic conference

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    第62 回応用物理学会春季学術講演会  2015.03 

  • タンデム太陽電池応用のためのSi/InGaP ヘテロ接合の電気伝導特性 Domestic conference

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    2015 年第62 回応用物理学会春季学術講演会  2015.03 

  • AR 膜によるInGaP/GaAs/Si 3 接合セル中サブセル特性の制御 Domestic conference

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    2015 年第62 回応用物理学会春季学術講演会  2015.03 

  • 表面活性化接合によるn+-Si/n-GaN コンタクトの検討 Domestic conference

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    2015 年第62 回応用物理学会春季学術講演会  2015.03 

  • SAB 法によるSi/Si 接合の界面特性の評価 Domestic conference

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    2015 年第62 回応用物理学会春季学術講演会  2015.03 

  • MOVPE 成長InGaN 厚膜における相分離の臨界膜厚 Domestic conference

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    電子情報通信学会電子デバイス研究会  2014.11 

  • InGaN/GaN MQW太陽電池におけるMQW構造が短絡電流に与える影響 Domestic conference

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    電子情報通信学会電子デバイス研究会  2014.11 

  • InGaP/GaAs/Si Hybrid Triple-Junction Cells by Surface-Activated Bonding of Invertedly-Grown III-V Heterostructures to Si- Based Bottom Cells Domestic conference

    The 6th World Conference on Photovoltaic Energy Conversion  2014.11 

  • MOVPE GROWTH OF THICK (~1 μm) InGaN ON AlN/Si SUBSTRATES FOR InGaN/Si TANDEM SOLAR CELL Domestic conference

    6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)  2014.11 

  • GaAs 傾斜基板上に成長したInGaP/InGaP 多重量子細線構造 Domestic conference

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    第44 回結晶成長国内会議  2014.11 

  • Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells International conference

    226th Meeting of The Electrochemical Society  2014.10 

  • RTA of MOVPEgrown Mg-doped InxGa1-xN (x~0.3) for Mg activation Domestic conference

    2014.09 

  • SiC 基板上Si 薄膜のウェット酸化と界面構造の安定 Domestic conference

    -

    第75 回応用物理学会秋季学術講演会  2014.09 

  • GaAs 傾斜基板上に多重積層させた自己形成InGaP/InGaP 量子細線状構造 Domestic conference

    -

    第75 回応用物理学会秋季学術講演会  2014.09 

  • 異種材料直接接合によるInGaP/GaAs/Siタンデムセル Domestic conference

    -

    第75回応用物理学会秋季学術講演会  2014.09 

  • p-type InxGa1-xN (x~0.3) grown by MOVPE at a low temperature (~570ºC) International conference

    2014 International Workshop on Nitride Semiconductors (IWN 2014)  2014.08 

  • Growth temperature dependent critical thickness for phase separation in thick (~1 μm) InxGa1-xN (x = 0.2~0.4) International conference

    2014 International Workshop on Nitride Semiconductors (IWN 2014)  2014.08 

  • III-V系半導体セルとイオン注入Siセルの貼り合せによるハイブリッド3接合セル Domestic conference

    -

    第11回「次世代の太陽光発電システム」シンポジウム  2014.07 

  • Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding Domestic conference

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2014.07 

  • Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions Domestic conference

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2014.07 

  • Annealing temperature dependence of SAB based Si/Si junctions Domestic conference

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2014.07 

  • Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells Domestic conference

    2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)  2014.07 

  • Fabrication and characterization of Si/~10-μm mesa-etched Si junctions by surface activated bonding Domestic conference

    2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)  2014.06 

  • Improvement in electrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing Domestic conference

    2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)  2014.06 

  • Hybrid Triple-Junction Solar Cells by Surface Activate Bonding of III-V Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells International conference

    40th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE  2014.06 

  • Observation of phase separation for thick (~1 μm) InxGa1-xN (x~0.3) grown on AlN/Si substrate International conference

    5th International Symposium on Growth of III-Nitrides (ISGN-5)  2014.05 

  • 高効率発電を目指すIII-N系太陽電池技術 Domestic conference

    -

    電子情報通信学会電子デバイス研究会(ED)専門委員会特別ワークショップ「電子デバイスから見たエネルギーハーベストの最新技術と展開」  2013.03 

  • 表面活性化ボンディングによるメサエッチングSi基板の接合特性評価 Domestic conference

    -

    2013年 第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるn-Si/n-4H-SiCヘテロ接合の作製及び評価 Domestic conference

    -

    2013年 第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるSi/InGaPヘテロ接合のバンド構造評価 Domestic conference

    -

    2013年 第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによるSi/GaAsヘテロ接合のバンド構造評価 Domestic conference

    -

    2013年 第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディングによる低抵抗Si/III-V接合 Domestic conference

    -

    2013年 第60回応用物理学会春季学術講演会  2013.03 

  • 表面活性化ボンディング法によるSi/4H-SiC 接合のC-V 特性評価 Domestic conference

    -

    2013年 第60回応用物理学会春季学術講演会  2013.03 

  • タンデム型太陽電池実現を目指す表面活性化異種半導体接合形成 Domestic conference

    -

    応用物理学会関西支部セミナー「光物性とその光機能 太陽光エネルギーハーベスティングのための新しい光機能」  2013.01 

  • 表面活性化ボンディングによるSi・異種材料接合の電気特性評価 Domestic conference

    -

    電子情報通信学会電子デバイス研究会(ED)  2012.11 

  • 表面活性化ボンディングによるp-Si/n+-Si貼り合わせ構造の輸送特性評価 Domestic conference

    -

    2012年秋季 第73回応用物理学会学術講演会  2012.09 

  • 表面活性化ウェハボンディングによるp-Si/n-GaAs貼り合せ構造の特性評価 Domestic conference

    -

    2012年秋季 第73回応用物理学会学術講演会  2012.09 

  • InGaN/GaN MQWにおけるキャリア寿命特性の井戸層厚依存性 Domestic conference

    -

    2012年秋季 第73回応用物理学会学術講演会  2012.09 

  • MOMBE成長によるGaAs基板上SnドープInGaPのn型ドーピング制御 Domestic conference

    -

    2012年秋季 第73回応用物理学会学術講演会  2012.09 

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Industrial Property Rights

Grant-in-Aid for Scientific Research

  • Si/ダイヤモンド直接接合界面ナノ構造の熱処理による制御

    Grant-in-Aid for Scientific Research(B)  2022

  • 縦型デバイス応用に向けた導電性ダイヤモンドとGaN、Ga2O3ヘテロ接合の形成

    Grant-in-Aid for Scientific Research(C)  2022

  • Control of nanostructures of directly-bonded Si/diamond interfaces by annealing

    Grant-in-Aid for Scientific Research(B)  2021.04

  • Heterojunction formation of conductive diamond and GaN, Ga2O3 for vertical device applications

    Grant-in-Aid for Scientific Research(C)  2020.04

  • Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application

    Grant-in-Aid for Scientific Research(B)  2019.04

  • Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics

    Grant-in-Aid for Challenging Research (Exploratory)  2018.06

  • Post-process control of PV characteristics using wavelength conversion properties of semiconductor nano-particles

    Grant-in-Aid for Scientific Research(B)  2017.04

  • Room temperature bonding of diamond to Si for power device application and clarification of bonding mechanism

    Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2016.04

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Contract research

  • RFデバイス用低熱抵抗4インチGaN-on-多結晶ダイヤモンド基板の研究開発

    科学技術振興機構  研究成果最適展開支援プログラム 産学共同(本格型)  2022.10

  • ダイヤモンド直接接合による高耐熱性界面の研究開発

    2019.07

  • 超高効率・低コストIII-V化合物太陽電池モジュールの研究開発(高効率・低コストIII-V/Siタンデム)/表面活性化接合によるⅢ-Ⅴ/Si多接合セル

    2019.04

  • 超高効率・低コストIII-V化合物太陽電池モジュールの研究開発(高効率・低コストIII-V/Siタンデム)/表面活性化接合によるⅢ-Ⅴ/Si多接合セル

    2018.04

  • 金属箔の表面活性化接合による金属厚膜の形成

    2016.06

  • 超高効率・低コストIII-V化合物太陽電池モジュールの研究開発(高効率・低コストIII-V/Siタンデム)/表面活性化接合によるⅢ-Ⅴ/Si多接合セル

    2015.06

  • シリコン基板上窒化物等異種材料タンデム太陽電池の研究開発

    2010.10

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Outline of education staff

  • 学部教育: アナログ電子回路の基礎的事項及びパワーエレクトロニクスの基礎的事項を講義(電子回路学基礎、パワーエレクトロニクス) 大学院教育: パワー半導体デバイスの材料及びデバイス動作原理、パワーエレクトロニクス回路構成を講義(パワーエレクトロニクス技術特論)

Charge of on-campus class subject

  • 電子物理系特別演習(電子材料)

    2022   Intensive lecture   Graduate school

  • 電子物理系特別演習第1(電子材料)

    2022   Intensive lecture   Graduate school

  • パワーエレクトロニクス技術特論

    2022   Weekly class   Graduate school

  • 光計測学特論 (杉本)

    2022   Intensive lecture   Graduate school

  • 特別演習(電子材料2)

    2022   Weekly class   Graduate school

  • 電子物理系特別演習第2(電子材料) (杉本)

    2022   Intensive lecture   Graduate school

  • ゼミナール

    2022   Intensive lecture   Graduate school

  • 後期特別研究

    2022   Intensive lecture   Graduate school

  • 特別演習 (パワーエレクトロニクスⅠ)

    2022   Intensive lecture   Graduate school

  • 電子・物理工学関係外書講読

    2022   Intensive lecture   Undergraduate

  • 電子物理工学概論2

    2022   Weekly class   Undergraduate

  • 電子物理系特別研究(電子材料)

    2022   Intensive lecture   Graduate school

  • 技術と環境/杉本[全]S

    2022   Weekly class   Graduate school

  • 特別演習(パワーエレクトロニクス)

    2022   Intensive lecture   Graduate school

  • 光計測学特論

    2022   Intensive lecture   Graduate school

  • 前期特別研究(電子情報系)

    2022   Intensive lecture   Graduate school

  • 後期特別研究(電子情報系)

    2022   Intensive lecture   Graduate school

  • ゼミナール(電子情報系)

    2022   Intensive lecture   Graduate school

  • 卒業研究(電子/物理工学科)

    2022   Intensive lecture   Undergraduate

  • アナログ電子回路学

    2022   Weekly class   Undergraduate

  • パワーエレクトロニクス

    2022   Weekly class   Undergraduate

  • アナログ電子回路学

    2021     Undergraduate

  • パワーエレクトロニクス

    2021     Undergraduate

  • パワーエレクトロニクス技術特論

    2021     Graduate school

  • パワーエレクトロニクス

    2020     Undergraduate

  • アナログ電子回路学

    2020     Undergraduate

  • パワーエレクトロニクス技術特論

    2020     Graduate school

  • アナログ電子回路学

    2019     Undergraduate

  • パワーエレクトロニクス

    2019     Undergraduate

  • パワーエレクトロニクス技術特論

    2019     Graduate school

  • パワーエレクトロニクス

    2018     Undergraduate

  • アナログ電子回路学

    2018     Undergraduate

  • パワーエレクトロニクス技術特論

    2018     Graduate school

  • 電子回路学基礎

    2017     Undergraduate

  • パワーエレクトロニクス

    2017     Undergraduate

  • パワーエレクトロニクス技術特論

    2017     Graduate school

  • 電子回路学基礎

    2016     Undergraduate

  • パワーエレクトロニクス技術特論

    2016     Graduate school

  • パワーエレクトロニクス

    2016     Undergraduate

  • 電子回路学基礎

    2015     Undergraduate

  • パワーエレクトロニクス技術特論

    2015     Graduate school

  • パワーエレクトロニクス

    2015     Undergraduate

  • 電子回路学基礎

    2014     Undergraduate

  • パワーエレクトロニクス技術特論

    2014     Graduate school

  • パワーエレクトロニクス

    2014     Undergraduate

  • 電子回路学基礎

    2013     Undergraduate

  • パワーエレクトロニクス

    2013     Undergraduate

  • パワーエレクトロニクス技術特論

    2013    

  • 技術と生命

    2013     Undergraduate

  • 電子物理工学実務技術論

    2013     Undergraduate

  • パワーエレクトロニクス

    2012     Undergraduate

  • 電子回路学I

    2012     Undergraduate

  • パワーエレクトロニクス技術特論

    2012    

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Number of papers published by graduate students

  • 2022

    Number of graduate students presentations:19

Original item・Special report (Education Activity)

  • 2021

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    Original item:博士課程教育リーディングプログラム担当教員として、当研究室に所属し、同プログラムを履修する後期博士課程学生(留学生)1名を指導教員として指導した。
    次世代研究者挑戦的研究プログラム「リゾーム型研究人材育成プログラム」に参加する後期博士課程学生1名を指導教員として指導した。

  • 2020

      More details

    Original item:博士課程教育リーディングプログラム担当教員として、リーディングプログラム実務委員会に参加するとともに、当研究室に所属し、同プログラムを履修する後期博士課程院生(留学生)1名を指導教員として指導した。

  • 2019

      More details

    Original item:博士課程教育リーディングプログラム担当教員として、リーディングプログラム実務委員会に参加するとともに、当研究室に所属し、同プログラムを履修する前期博士課程院生(留学生)1名を指導教員として指導した。あわせて研究室ローテーションにおいて、他研究室学生1名を受け入れた。

  • 2018

      More details

    Original item:博士課程教育リーディングプログラム担当教員として、リーディングプログラム実務委員会に参加するとともに、当研究室に所属し、同プログラムを履修する前期博士課程院生(留学生)1名を指導教員として指導した。

  • 2017

      More details

    Original item:博士課程教育リーディングプログラム担当教員として、リーディングプログラム実務委員会に参加するとともに、研究室で指導する研究生(留学生)1名を出願・合格させた。

Social Activities

  • 報道発表「日本の解析技術と結晶成長技術の結晶!半導体材料3C-SiCが高い熱伝導率を示すことを初めて実証」

    Role(s): Media coverage, Official expert

    大阪公立大学  大阪公立大学ホームページ  2022.12 - Now

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    SDGs:

    Audience: Researchesrs, Company, Media

    Type:Newspaper, magazine

    米国・イリノイ大学、同・ジョージア工科大学、エア・ウォーター株式会社、東北大学金属材料研究所との共同研究により、半導体材料3C-SiCが理論値に相当する高い熱伝導率を示すことを、熱伝導率の評価と原子レベルの解析から初めて実証した。

  • 報道発表「ダイヤモンドに接合された窒化ガリウムを熱加工し、トランジスタを作製することに成功」

    Role(s): Media coverage, Official expert

    大阪市立大学  大阪市立大学ホームページ  2022.03 - Now

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    SDGs:

    Audience: Researchesrs, Company, Media

    Type:Newspaper, magazine

    東北大学金属材料研究所、国立研究開発法人物質・材料研究機構(研究当時)、エア・ウォーター株式会社に所属する研究者とともに、ダイヤモンドに接合された窒化ガリウムを熱加工し、トランジスタの作製に成功するとともに放熱性の向上を実証した。本報道発表は日本経済新聞電子版において紹介された。

  • 報道発表「LED照明などで広く活用されている窒化ガリウムとダイヤモンドの直接接合に世界で初めて成功」

    Role(s): Media coverage, Official expert

    大阪市立大学  大阪市立大学ホームページ  2021.09 - Now

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    Audience: Researchesrs, Company, Media

    Type:Newspaper, magazine

    地球上で最も熱伝導率が高く、最も効率的に熱を逃すことができるダイヤモンドと窒化ガリウムとの常温での直接接合に成功し、直接接合が1,000℃の熱処理にも耐えることを実証した。更に、接合に際してダイヤモンドの結晶構造が壊れるものの、熱処理することで再結晶化することを明らかにした。本報道発表は電子デバイス産業新聞、日経産業新聞、日刊産業新聞において紹介された。

  • イノベーション・ジャパン2020~大学見本市~

    Role(s): Guest

    JST  イノベーション・ジャパン2020~大学見本市~  オンライン  2020.09 - 2020.11

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    Audience: Researchesrs, Company, Governmental agency

    Type:Seminar, workshop

    イノベーション・ジャパン2020~大学見本市~において「イノベーション・ジャパン2020~大学見本市~」と題してオンラインにてシーズ展示を行った。

  • NEDOフェスタin関西2019

    Role(s): Guest

    NEDO  NEDOフェスタin関西2019  Grand Front Osaka  2019.12

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    Audience: Researchesrs, Company, Governmental agency

    Type:Seminar, workshop

    NEDOフェスタ2019in関西において「低熱抵抗モジュール実現を目指すダイヤモンド異種材料直接接合」と題して展示を行った。

  • NEDOフェスタin関西2019

    Role(s): Guest

    NEDO  NEDOフェスタin関西2019  Grand Front Osaka  2019.12

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    Audience: Researchesrs, Company, Governmental agency

    Type:Seminar, workshop

    NEDOフェスタ2019in関西において「低熱抵抗モジュール実現を目指すダイヤモンド異種材料直接接合」と題して展示を行った。

  • オープン・ラボラトリ―

    Role(s): Lecturer, Planner

    大阪市立大学  オープンラボラトリー  大阪・産創館  2019.04

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    Audience: Researchesrs, General public, Company

    Type:Lecture

    機能創成科学教育研究センターとして、第78回オープン・ラボラトリー「高効率エネルギー変換を目指して-化学からの挑戦」を企画・開催した。

  • オープン・ラボラトリ―

    Role(s): Lecturer, Planner

    大阪市立大学  オープンラボラトリー  大阪・産創館  2019.01

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    Audience: Researchesrs, General public, Company

    Type:Lecture

    機能創成科学教育研究センターとして、第77回オープン・ラボラトリー「創エネ・省エネ材料-ナノ構造、ナノ材料からの発信」を企画・開催した。

  • イノベーションジャパン2018

    Role(s): Guest

    NEDO, JST  イノベーションジャパン2018  東京ビッグサイト  2018.08

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    Audience: Researchesrs, Company, Governmental agency

    Type:Seminar, workshop

    イノベーションジャパン2018への大阪市立大学の大学組織展示(テーマ:未来の低炭素社会につながるエネルギー研究)の一環として出展した。

  • イノベーションジャパン2018

    Role(s): Guest

    NEDO, JST  イノベーションジャパン2018  東京ビッグサイト  2018.08

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    Audience: Researchesrs, Company, Governmental agency

    Type:Seminar, workshop

    イノベーションジャパン2018への大阪市立大学の大学組織展示(テーマ:未来の低炭素社会につながるエネルギー研究)の一環として出展した。

  • JST、関西3公立大学/スマートテクノロジー 新技術説明会

    Role(s): Lecturer

    科学技術振興機構、大阪府立大学、大阪市立大学、兵庫県立大学  スマートテクノロジー 新技術説明会  JST東京本部別館1Fホール(東京・市ケ谷)  2017.11

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    Audience: Researchesrs, Scientific organization, Company

    Type:Lecture

    Number of participants:1(人)

    特許出願の内容に基づき、表面活性化接合技術の様々な産業応用の可能性を紹介する講演を行った。

  • JST、関西3公立大学/スマートテクノロジー 新技術説明会

    Role(s): Lecturer

    科学技術振興機構、大阪府立大学、大阪市立大学、兵庫県立大学  スマートテクノロジー 新技術説明会  JST東京本部別館1Fホール(東京・市ケ谷)  2017.11

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    Audience: Researchesrs, Scientific organization, Company

    Type:Lecture

    特許出願の内容に基づき、表面活性化接合技術の様々な産業応用の可能性を紹介する講演を行った。

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Academic Activities

  • 14th Topical Workshop on Heterostructure Microelectronics プログラム委員

    Role(s): Planning, management, etc., Peer review

    電子情報通信学会 電子デバイス研究会  2022.04 - 2022.09

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    Type:Academic society, research group, etc. 

  • Conference Chair, 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021)

    Role(s): Planning, management, etc., Panel moderator, session chair, etc., Supervision (editorial)

    2021

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    Type:Academic society, research group, etc. 

  • 電気学会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用」調査専門委員会

    Role(s): Planning, management, etc., Planning/Implementing academic research

    電気学会  2019.10 - Now

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    Type:Academic society, research group, etc. 

  • 電子情報通信学会電子デバイス研究会 調査専門委員

    Role(s): Planning, management, etc., Planning/Implementing academic research

    電子情報通信学会  2012.04 - Now

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    Type:Academic society, research group, etc. 

  • Japanese Journal of Applied Physics編集委員

    Role(s): Review, evaluation, Peer review

    応用物理学会  2012.04 - 2023.03

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    Type:Peer review 

Foreigner acceptance

  • 2022

    foreigners accepted :0

    International Students :1

  • 2021

    foreigners accepted :0

    International Students :1

  • 2020

    foreigners accepted :0

    International Students :1

  • 2019

    foreigners accepted :0

    International Students :1

  • 2018

    International Students :1

  • 2017

    International Students :1

  • 2015

    International Students :1

  • 2014

    International Students :1

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International exchange activities

  • Joint research agreement with Centre for Device Thermography and Reliability, School of Physics, University of Bristol, UK.

    Field category :Research

    Country name :United Kingdom   2018.01 - Now

Job title

  • Job title within the department

    School of Engineering Department of Physics and Electronics 

    2022.04

  • Manager within the university

    2016.04 - 2020.03