Updated on 2023/11/02

写真a

 
TAKEUCHI Hideo
 
Organization
Graduate School of Engineering Division of Physics and Electronics Associate Professor
School of Engineering Department of Physics and Electronics
Title
Associate Professor
Affiliation
Institute of Engineering
Profile
Hideo Takeuchi was born in Shiga, Japan, in 1973. He received the B.S. degree in Engineering from Osaka City University, Osaka, Japan in 1995, and the M.S. degree in Physics from Graduate School of Science, Osaka University, in 1997. In 2002, he received the Ph.D. degree in Engineering from Graduate School of Engineering, Osaka City University. From 1997 to 1999, he was an engineer for Si-based LSI technology with ROHM CO., LTD., Kyoto, Japan. From 2002 to 2008, he was with Mitsubishi Electric Corporation, Hyogo, Japan, where he was engaged in the research and development of high frequency electronic devices, and focused his attention on the characterization and design technology of epitaxial wafers for heterojunction bipolar transistors (HBTs) and AlxGa1-xN/GaN based high-electron-mobility transistors (HEMTs). From 2008 to 2013, he was an Associate Professor with Department of Electronic Systems Engineering, School of Engineering, The University of Shiga Prefecture, Shiga, Japan. Since 2013, he has been an Associate Professor with Department of Applied Physics, Graduate School of Engineering, Osaka City University. In addition, since 2017, he has also been a collaborate researcher with Faculty of Science and Technology, Sophia University, Tokyo, Japan. In the academic position of the universities, he has been focusing his attention on optical functions of semiconductors. His research interests include terahertz radiation phenomena observed with the use of the time-domain techniques, ultrafast spectroscopy, photoreflectance spectroscopy, inspection technology for compound semiconductor wafers, and excitons in semiconductors. In April 2022, Osaka Prefecture University and Osaka City University united to form the Osaka Metropolitan University. Accordingly, since 2022, he has been also an Associate Professor with Department of Physics and Electronics, Graduate School of Engineering, Osaka Metropolitan University.

Dr. Takeuchi is a member of The Physical Society of Japan, a member of The Japan Society of Applied Physics, and a member of The American Physical Society (APS), a member of The Institute of Electrical and Electronics Engineers (IEEE), a member of American Vacuum Society (AVS), a member of The Optical Society of America (OSA), and a member of Institute of Physics (IOP).

His permanent URL: http://www.ceres.dti.ne.jp/~hideo-t/index.html
ORCID 0000-0002-8073-3233: https://orcid.org/0000-0002-8073-3233
Web of Science ResearcherID (h-index included) ADO-9394-2022: https://publons.com/researcher/3494022/hideo-takeuchi/
Researchmap ID: B000306755: https://researchmap.jp/HTakeuchi/
Affiliation campus
Sugimoto Campus

Position

  • Graduate School of Engineering Division of Physics and Electronics 

    Associate Professor  2022.04 - Now

  • School of Engineering Department of Physics and Electronics 

    Associate Professor  2022.04 - Now

Degree

  • Ph.D. (Engineering) ( Osaka City University )

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics  / Ultrafast pump-probe spectroscopy of coherent phonons

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics  / Terahertz time-domain spectroscopy for clarifying dynamics of coherent phonons-longitudial optical plasmon coupled mode

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

  • Nanotechnology/Materials / Applied physical properties

Research Interests

  • Compound semiconductors

  • Ultrafast spectroscoy

  • Terahertz time-domain spectroscopy

  • Photoreflectance spectroscopy

  • Spectroscopy

  • GaN

  • Gallium oxcide

  • ZnO

  • Ultrafast optical phenomena

  • Terahetz time-domain spectroscopy

  • Photoluminescence

  • Narrow gap semiconductors

  • InGaP HBTs

  • InGaP

  • III-V semiconductors

  • GaAs

  • Electroreflectance spectroscopy

  • Dilute III-V nitride semiconductors

  • Dilute III-V bithmathide semiconductors

  • Coherent phonon spectroscopy

  • AlGaAs-based HBTs

  • GaN-based HEMTs

  • Photoreflectance spectroscopy

Research Career

  • Optical functions of semiconductors

    Terahertz time-domain spectroscopy, Ultrafast optical spectrosocpy, Modulation spectroscop, Raman scattering spectroscopy, Polariscopic evaluation of residual strains, Compund semiconductors  Individual

    1994.04 - Now 

Professional Memberships

  • The Physical Society of Japan

      Domestic

  • The Japan Society of Applied Physics

      Domestic

  • American Physical Society

      Overseas

  • The Institute of Electrical and Electronics Engineers

      Overseas

  • American Vacuum Society (AVS)

      Overseas

  • The Optical Society of America (OSA)

      Overseas

  • Institute of Physics (IOP)

    2021.08 - Now   Overseas

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Committee Memberships (off-campus)

  • 委員   大阪南エネルギー懇話会  

    2022.04 - Now 

  • Organizing Comittee   The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures  

    2018.10 - 2019.08 

Awards

  • Selected for the May 2011 issue of Virtual Journal of Ultrafast Science (Volume 10, Issue 5).

    Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama

    2011.05   American Institute of Physics   Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer

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    Country:United States

    We demonstrate that, in a GaSb/GaAs epitaxial structure, the coherent longitudinal optical (LO) phonon in the GaAs layer optically masked by the GaSb top layer is observed utilizing terahertz- electromagnetic-wave spectroscopy. It is confirmed from a Raman scattering measurement that only the optical phonon in the GaSb layer is optically observable, where the photon energy of the excitation laser beam was almost the same as that of the femtosecond pulse pump beam for the terahertz wave measurement. In the terahertz wave measurement, the Fourier power spectrum of the terahertz waveform exhibits both the GaAs and the GaSb LO phonons; namely, the coherent LO phonon in the optically masked GaAs buffer layer is observed in the terahertz wave measurement. This fact demonstrates that the instantaneous surface potential modulation originating from the impulsive carrier excitation by the pump pulses reaches the GaAs buffer layer. Consequently, the above-mentioned surface potential modulation generates the coherent GaAs LO phonon.

  • Selected for the May 2011 issue of Virtual Journal of Ultrafast Science (Volume 10, Issue 5).

    Hideo Takeuchi

    2011.05   American Intitute of Physics   Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer

Job Career (off-campus)

  • Osaka Metropolitan Univesity   Department of Physics and Electronics, Graruate School of Engnieering   Asscociate Professor

    2022.04 - Now

  • Osaka City University   Graduate School of Engineering

    2013.04 - Now

  • Osaka City Univesity   Department of Applied Physics, Graduate School of Engineering   Asscociate Professor

    2013.04 - 2022.03

  • The University of Shiga Prefecture   Department of Electronic Systems Engineering, School of Engineering   Asscociate Professor

    2008.04 - 2013.03

  • The University of Shiga Prefecture

    2008.04 - 2013.03

  • Mitsubishi Electric Corporation

    2002.04 - 2008.02

  • Mitsubishi Electric Corporation

    2002.04 - 2008.02

  • Osaka Institute of Technology

    1999.04 - 2002.03

  • Osaka Institute of Technology   General Education Course, Faculty of Engineering

    1999.04 - 2002.03

  • ROHM Co. Ltd.,

    1997.04 - 1999.03

  • ROHM Co., Ltd.

    1997.04 - 1999.03

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Education

  • Osaka City University   Applied Physics   The second semester of doctoral program   Graduated/Completed

    - 2002

  • Osaka City University   Department of Applied Physics     Graduated/Completed

    - 1997

  • Osaka University   Physics   The first semester of doctoral program   Graduated/Completed

    - 1997

Papers

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Books and Other Publications

  • Polariscopy: Its high sensitivity to internal/residual strains of semiconductor single crystal wafers

    HideoTakeuchi( Role: Sole author)

    Nova Science Publishers, NY, United States of America  2014 

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    Responsible for pages:173-198  

  • Photoreflectance spectroscopy of Franz-Keldysh oscillations from semiconductor heterostructures for electronic and optoelectronic devices and components

    ( Role: Sole author)

    Nova Science Publishers, NY, United States of America  2014 

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    Responsible for pages:63-96  

  • Terahertz Electromagnetic Waves from Semiconductor Epitaxial Layer Structures: Small Energy Phenomena with a Large Amount of Information

    Hideo Takeuchi( Role: Sole author)

    Wave Propagation edited by Andrey Petrin (INTECH, Vienna, March 2011, ISBN: 978-953-307-275-3).  2011.03 

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    Responsible for pages:105-130  

MISC

  • Exploration of influence of doped-carrier-density on photo-Dember effects in doped and undoped InSb single crystals using terahertz time-domain spectroscopy Reviewed

    竹内日出雄, 住岡俊裕, 中山正昭

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    J-GLOBAL

  • 時間領域テラヘルツ分光を用いた高速原子ボンバードメント処理によるGaAsエピタキシャル層表面の評価 Reviewed

    大椋祐斗, 竹内日出雄, 中山正昭, 小野田稜太, 中岡俊裕, 内海淳, 川崎繁男, 小山政俊

    日本物理学会講演概要集(CD-ROM)   74 ( 2 )   2019( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • 低温成長GaAsエピ層におけるコヒーレント縦光学フォノンおよび縦光学フォノン-プラズモン結合モードからのテラヘルツ放射 Reviewed

    竹内日出雄, 西村拓也, 中山正昭, CHEN A., FIELD R. L., III, GOLDMAN R. S.

    日本物理学会講演概要集(CD-ROM)   74 ( 1 )   2019( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    J-GLOBAL

  • Fablica: Explorling Physics of Waves Invited

    Hideo Takeuchi

    Fablica (Central Workshop of Osaka City University)   29   31 - 40   2018.03

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    Publishing type:Internal/External technical report, pre-print, etc.   Kind of work:Single Work  

  • (110)面方位半絶縁性GaAs単結晶におけるコヒーレント縦光学フォノンからのテラヘルツ電磁波発生 Reviewed

    西村拓也, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   73 ( 1 )   2018( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    J-GLOBAL

  • (11n)面方位GaAs/In<sub>0.1</sub>Al<sub>0.9</sub>As歪多重量子井戸におけるコヒーレントGaAs型縦光学フォノンからのテラヘルツ電磁波放射に対する光生成キャリアのスクリーニング効果 Reviewed

    竹内日出雄, 浅井聡太, 中山正昭

    日本物理学会講演概要集(CD-ROM)   73 ( 1 )   2018( ISSN:2189-079X

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    J-GLOBAL

  • Feドープβ-Ga<sub>2</sub>O<sub>3</sub>単結晶における自己束縛励起子の特性 Reviewed

    三国祐亮, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   72 ( 2 )   2017( ISSN:2189-079X

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  • アンドープGaAs/n型GaAsエピ構造における縦光学フォノン・プラズモン結合モードの時間領域テラヘルツ分光とラマン散乱分光 Reviewed

    竹内日出雄, 住岡隆弘, 中山正昭

    日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017( ISSN:2189-079X

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  • アンドープGaAs/n型GaAsエピタキシャル構造における縦光学フォノンからのテラヘルツ電磁波減衰過程に対する光生成キャリアの影響 Reviewed

    竹内日出雄, 住岡隆弘, 中山正昭

    日本物理学会講演概要集(CD-ROM)   72 ( 2 )   2017( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    J-GLOBAL

  • i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノン-プラズモン結合モードからのテラヘルツ電磁波放射の減衰過程 Reviewed

    住岡隆裕, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • i-GaAs/n-GaAsとi-GaAs/p-GaAsエピタキシャル構造におけるテラヘルツ電磁波放射特性の対比 Reviewed

    住岡隆裕, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   71 ( 2 )   2016( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • 励起光エネルギーチューニングによるGaAs多層膜中の電子輸送過程の遷移 Reviewed

    長谷川尊之, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   71 ( 1 )   2016( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    J-GLOBAL

  • i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノン-プラズモン結合モードからのテラヘルツ電磁波発生ダイナミクス II Reviewed

    住岡隆裕, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   71 ( 1 )   2016( ISSN:2189-079X

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  • Eu添加GaNエピタキシャル薄膜における発光励起スペクトルの特異性 Reviewed

    中村聡志, 竹内日出雄, 小泉淳, 藤原康文, 中山正昭

    日本物理学会講演概要集(CD-ROM)   70 ( 1 )   2015( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノン-プラズモン結合モードからのテラヘルツ電磁波発生ダイナミクス Reviewed

    住岡隆裕, 竹内日出雄, 中山正昭

    日本物理学会講演概要集(CD-ROM)   70 ( 2 )   2015( ISSN:2189-079X

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • 10aPS-112 Pump-probe spectroscopy of nonequilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures Reviewed

    Hasegawa T., Takeuchi H., Yamada H., Hata M., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   553 - 553   2014.08( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    CiNii Article

  • 10aPS-93 Effects of exciton dissociation on Eu^<3+> photoluminescence in Eu-doped GaN epitaxial films Reviewed

    Nakamura Satoshi, Takeuchi Hideo, Koizumi Atsushi, Fujiwara Yasufumi, Nakayama Masaaki

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   548 - 548   2014.08( ISSN:1342-8349

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  • 27aAU-10 Polariton characteristics of photoluminescence dynamics of exciton-exciton scattering in GaAs/AlAs multiple quantum wells Reviewed

    Furukawa Y., Takeuchi H., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   689 - 689   2014.03( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • 28pCK-6 Raman scattering spectroscopy and terahertz-electromagnetic-wave generation of longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures Reviewed

    Takeuchi H., Asai S., Tsuruta S., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   755 - 755   2014.03( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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    J-GLOBAL

  • 28pCK-5 Voltage-controllable terahertz radiation from coherent LO phonons in a GaAs p-i-n diode structure Reviewed

    Nakayama M., Asai S., Takeuchi H., Ichikawa O., Hata M.

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   755 - 755   2014.03( ISSN:1342-8349

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    J-GLOBAL

  • 27pCK-8 Transport mechanism of photogenerated carriers in undoped GaAs/n-type GaAs epitaxial structures Reviewed

    Hasegawa T., Takeuchi H., Yamada H., Hata M., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   69 ( 1 )   739 - 739   2014.03( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • GaN:Eu結晶薄膜におけるEu<sup>3+</sup>発光に対する励起子解離効果 Reviewed

    中村聡志, 竹内日出雄, 小泉淳, 藤原康文, 中山正昭

    日本物理学会講演概要集   69 ( 2 )   2014( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    J-GLOBAL

  • Photoluminescence dynamics of exciton-exciton scattering in a GaAs/AlAs multiple quantum well Reviewed

    Furukawa Y., Takeuchi H., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   600 - 600   2013.08( ISSN:1342-8349

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    J-GLOBAL

  • Non-equilibrium photocarrier transports and ultrafast optical responses in undoped GaAs/n-type GaAs epitaxial structures Reviewed

    Hasegawa T., Takeuchi H., Yamada H., Hata M., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   692 - 692   2013.08( ISSN:1342-8349

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    J-GLOBAL

  • Enhancement mechanism of terahertz radiation from coherent LO phonons in i-GaAs/n-GaAs epitaxial structures Reviewed

    Nakamori Ippei, Takeuchi Hideo, Nakayama Masaaki

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   687 - 687   2013.08( ISSN:1342-8349

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    J-GLOBAL

  • 26aXQ-8 Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures II Reviewed

    Hasegawa T., Takagi Y., Takeuchi H., Yamada H., Hata M., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   743 - 743   2013.03( ISSN:1342-8349

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  • 29aEH-5 Generation of intense terahertz electromagnetic waves from coherent LO phonons in (11n)-oriented GaAs/InAlAs strained multiple quantum wells II Reviewed

    Asai S., Takeuchi H., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   852 - 852   2013.03( ISSN:1342-8349

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  • 18aFB-2 Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures Reviewed

    Hasegawa T., Takagi Y., Takeuchi H., Yamada H., Hata M., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   613 - 613   2012.08( ISSN:1342-8349

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  • 19aHB-7 Terahertz spectroscopy of relaxation processes of coherent LO phonons in a GaSb/GaAs epitaxial structure Reviewed

    Takeuchi H., Tsuruta S., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   67 ( 2 )   688 - 688   2012.08( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • 26pBL-6 Terahertz electromagnetic waves from longitudinal optical phonon-plasmon coupled mode in an uadoped GaAs/n-type GaAs epitaxiat structure Reviewed

    Takeuchi H., Tsuruta S., Nakayama M.

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   812 - 812   2012.03( ISSN:1342-8349

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

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  • A High Reliability GaN HEMT with SiN Passivation by Cat-CVD Reviewed

    KUNII Tetsuo, TOTSUKA Masahiro, KAMO Yoshitaka, YAMAMOTO Yoshitsugu, TAKEUCHI Hideo, SHIMADA Yoshiharu, SHIGA Toshihiko, MINAMI Hiroyuki, KITANO Toshiaki, MIYAKUNI Shinichi, NAKATSUKA Shigenori, INOUE Akira, OKU Tomoki, NANJO Takuma, OISHI Toshiyuki, ISHIKAWA Takahide, MATSUDA Yoshio

    IEICE technical report. Microwaves   104 ( 552 )   25 - 30   2005.01( ISSN:0913-5685

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    Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    We have developed the catalytic vapor deposition (Cat-CVD) passivated AlGaN/GaN HEMT. We have found out that the Cat-CVD passivation film with NH_3 treatment greatly enhances the reliability of the AlGaN/GaN HEMT. It is rationalized, through the low frequency capacitance-voltage measurement, that the NH_3 treatment in the Cat-CVD reactor before the SiN film deposition minimizes the damage at the SiN/AlGaN interface, leading to reducing the surface trap density. The AlGaN/GaN HEMT passivated by the Cat-CVD SiN film suppresses the degradation of an output power to less than 0.4 dB under the RF operation of Vd = 30 V, f= 5 GHz after 200 h.

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  • Intercubband-transition electroluminescence in a GaAs/AlAs multiple-quantum-well structure Reviewed

    Nakayama N, Taeuchi H., Domoto C., Nisimura T., 0htani N., Vaccaro P.O., Aida T.

    Meeting abstracts of the Physical Society of Japan   57 ( 2 )   556 - 556   2002.08( ISSN:1342-8349

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  • 27aYE-4 Dynamics of coherent folded longitudinal acoustic phonons in long-period superlattices Reviewed

    Hino T., Takeuchi H., Misoguchi K., Nakayama M., Nakashima S., Bartels A., Dekorsy T., Kurz H.

    Meeting abstracts of the Physical Society of Japan   57 ( 1 )   712 - 712   2002.03( ISSN:1342-8349

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  • 27p-Z-10 Free-Exciton Photoluminescence in Cuprous-Halide Thin Films Grown by Vacuum Evaporation Reviewed

    Soumura A., Hamasaki K., Takeuchi H., Nakayama M., Nishimura H.

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting   1995 ( 2 )   250 - 250   1995.09

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Presentations

  • 半導体エピ層へのフェムト秒パルス光照射によって発生するテラヘルツ電磁波の増強の試み: ネオジウム永久磁石マウントの活用 Domestic conference

    松岡俊吾,仙木優介,竹内日出雄

    日本表面真空学会2023年度関東支部講演大会  2023.04 

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    Presentation type:Oral presentation (general)  

    Venue:立教大学(オンライン開催)  

  • Influence of Relatively High Density Background Carriers on Photo-Dember Effects at the Surfaces of n-type and p-type InSb Single Crystals Observed with the Use of Terahertz Time-Domain Spectroscopy: A Study on Ultrafast Photogenerated Carrier Diffusion International conference

    Hideo Takeuchi and Takahiro Sumioka

    The AVS Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2022)  2022.12  American Vacuum Society (AVS)

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    Presentation type:Oral presentation (general)  

    Venue:Waikoloa Marriot Beach & Spa, Hawaii, USA  

  • Can longitudinal optical phonons obtain longer decay time by introducing defects with the use of surface treatments? A terahertz time-domain spectroscopic study on GaAs epilayers International conference

    Hideo Takeuchi, Yuto Omuku, Ryota Onoda Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama

    The 35th International Conference on the Physics of Semiconductors (ICPS2022)  2022.06  ICPS2022

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    Presentation type:Poster presentation  

    Venue:International Convention Centre Sydney, Sydney, Australia  

    Other Link: https://icps2022.org/

  • Terahertz time-domain spectroscopy of GaAs epitaxial layers treated with the use of fast atom bombardment International conference

    Hideo Takeuchi, Yuto Omuku, Ryota Onoda Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama

    The 31st International Conference on Defects in Semiconductors (ICDS31)  2021.06  ICDS31

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    Presentation type:Poster presentation  

    Venue:The University of Oslo, Oslo, Norway  

  • 時間領域テラヘルツ分光を用いたInSb単結晶におけるドーピングキャリア濃度によるフォトデンバー効果への影響の探査 Domestic conference

    竹内日出雄,住岡俊裕,中山正昭

    日本物理学会 第75年次大会(2020年)  2020.03 

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    Presentation type:Oral presentation (general)  

  • 高速原子ボンバードメント処理されたGaAsエピタキシャル層の時間領域テラヘルツ分光 Domestic conference

    大椋祐斗,竹内日出雄,中山正昭,小野田稜太,中岡俊裕,内海淳,川崎繁男,小山政俊

    第30回光物性研究会  2019.12 

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    Presentation type:Poster presentation  

  • 時間領域テラヘルツ分光を用いた高速原子ボンバードメント処理によるGaAsエピタキシャル層表面の評価 Domestic conference

    大椋祐斗,竹内日出雄,中山正昭,小野田稜太,中岡俊裕,内海淳 ,川崎繁男,小山政俊

    日本物理学会2019年秋季大会  2019.09 

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    Presentation type:Oral presentation (general)  

  • Terahertz emission from coherent longitudinal optical (LO) phonons and LO-phonon-plasmon coupled modes in a low-temperature-grown GaAs epitaxial layer International conference

    Hideo Takeuchi, Takuya Nishimura, Masaaki Nakayama, Andra Chen, Richard L. Field, III, and Rachel S. Goldman

    The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON21)  2019.07 

  • 低温成長GaAsエピ層におけるコヒーレント縦光学フォノンおよび縦光学フォノン-プラズモン結合モードからのテラヘルツ放射 Domestic conference

    竹内日出雄,西村拓也,中山正昭,A. Chen, R. L. Field, III, R. S. GoldmanB

    日本物理学会 第74 回年次大会(2019 年)  2019.03 

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    Presentation type:Poster presentation  

  • (001)面方位および(110)面方位半絶縁性GaAs単結晶におけるコヒーレント縦光学(LO)フォノンおよびLOフォノン-プラズモン結合モードからのテラヘルツ電磁波発生 Domestic conference

    西村拓也, 竹内日出雄, 中山正昭

    第29回光物性研究会  2018.12 

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    Presentation type:Poster presentation  

  • (11n)面方位GaAs/In0.1Al0.9As歪多重量子井戸におけるコヒーレントGaAs型縦光学フォノンからのテラヘルツ電磁波放射に対する光生成キャリアのスクリーニング効果 Domestic conference

    竹内日出雄,浅井聡太,中山正昭

    日本物理学会 第 73 回年次大会(2018 年)  2018.09 

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    Presentation type:Poster presentation  

  • (110)面方位半絶縁性GaAs単結晶におけるコヒーレント縦光学フォノンからのテラヘルツ電磁波発生 Domestic conference

    西村拓也,竹内日出雄,中山正昭

    日本物理学会第73回年次大会 (2018年)  2018.09 

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    Presentation type:Oral presentation (general)  

  • p-i-n GaAs構造におけるコヒーレント縦光学フォノンからのテラヘルツ電磁波発生のバイアス電圧制御 Domestic conference

    西村拓也,竹内日出雄,中山正昭

    第27回⽇本⾚外線学会研究発表会  2017.10 

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    Presentation type:Poster presentation  

  • Reliability Evaluation of a Passivation Thin Film Deposited on a GaAs Epilayer with Use of Photoreflectance Spectroscopy International conference

    Hideo Takeuchi

    29th International Conference on Defects in Semiconductors (ICDS 2017), July 31 – Aug.4, 2017, Matsue-Kunibiki messe, Matsue, Japan.  2017.08 

  • Screening effects of photogenerated carriers on terahertz radiation from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum we International conference

    Hideo Takeuchi, Souta Asai, and Masaaki Nakayama.

    The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON20), Hyatt Regency Hotel, Buffalo, NY USA (July 17-21, 2017).  2017.07 

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    Presentation type:Poster presentation  

  • Appearance of coherent LO phonons during the decay of LO-phonon‒plasmon coupled mode in an undoped GaAs/n-type GaAs epitaxial structure International conference

    Takahiro Sumioka, Hideo Takeuchi, Masaaki Nakayama.

    The 19th International Conference on Dynamical Processes in Excited States of Solids (DPC' 16), July 17-22, 2016, Chimie ParisTech, Paris, France.  2016 

  • Effects of photogenerated carrier scattering on the decay process of coherent longitudinal optical phonons in an undoped GaAs/n-type GaAs epitaxial structure investigated by terahertz time-domain spectroscopy International conference

    Hideo Takeuchi, Takahiro Sumioka, and Masaaki Nakayama.

    The Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016), December 11-15, 2016, The Big Island of Hawaii, USA.   2016 

  • Dynamical properties of terahertz radiation from coherent longitudinal optical phonon-plasmon coupled modes in an undoped GaAs/n-type GaAs epitaxial structure International conference

    Takahiro Sumioka, Hideo Takeuchi, and Masaaki Nakayama.

    The 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) 2015, August 23-28, 2015, The Chinese University of Hong Kong, Hong Kong.   2015 

  • Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures International conference

    Hideo Takeuchi, Souta Asai, Shuichi Tsuruta, Takahiro Sumioka, and Masaaki Nakayama.

    The 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) 2015, August 23-28, 2015, The Chinese University of Hong Kong, Hong Kong.   2015 

  • Intermediate range order in Ge-(Sb)-Te amorphous films prepared by vacuum thermal evaporation and electrochemical metallization memory prepared by RF magnetron sputtering International conference

    Toshihiro Nakaoka, Hiroki Satoh, Yukiomi Nishiyama, Shimon Kida, and Yusuke Imanishi, Saori Honjo, and Hideo Takeuchi.

    The 27th Symposium on Phase Change Oriented Science (PCOS 2015), November 26-27, Atami New Fujiya Hotel, Atami, Japan.  2015 

  • Transport mechanism of photogenerated carriers in undoped GaAs/n-type GaAs epitaxial structures Domestic conference

    2014.03 

  • Raman scattering spectroscopy and terahertz-electromagnetic-wave generation of longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures Domestic conference

    2014.03 

  • GaAsダイオード構造におけるコヒーレントLOフォノンからのテラヘルツ電磁波発生の電圧制御 Domestic conference

    -

    日本物理学会第69回年次大会  2014.03 

  • Comparison of Detection Ability for Residual Strains in a (110)-oriented ZeTe Single Crystal between Photoluminescence Spectroscopy and Polariscopic Analysis: Explore of Strain-Sensitive Optical Characterizations International conference

    Hideo Takeuchi

    The International Conference on Luminescence and Optical Spectroscopy of Condensed Matter 2014, July 13-18, 2014, University of Wrocław, Wrocław, Poland.   2014 

  • Evaluation of passivation film characteristics grown on GaAs epilayers with use of photoreflectance spectroscopy Domestic conference

    24th Symposium of Association for Condensed Matter Photophysics  2013.12 

  • Built-in electric field effects on terahertz ratiation from coherent LO phonons in i-GaAs/n-GaAs epitaxial structures Domestic conference

    24th Symposium of Association for Condensed Matter Photophysics  2013.12 

  • Comparison in Internal Strain Sensitivity between Polariscopy and Raman Scattering Spectroscopy in a ZnTe Single Crystal International conference

    The International Conference on II-VI Compounds and Related Materials  2013.09 

  • Damage Characteristics of SiC Surface by He plasma Domestic conference

    2013.09 

  • Optical spectroscopic sensitivity for internal strains in a ZnTe single crystal Domestic conference

    2013 Autumn Meeting of the Physical Society of Japan,  2013.09 

  • Enhancement mechanism of terahertz radiation from coherent LO phonons in i-GaAs/n-GaAs epitaxial structures Domestic conference

    2013 Autumn Meeting of the Physical Society of Japan  2013.09 

  • Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures II Domestic conference

    2013 Autumn Meeting of the Physical Society of Japan  2013.09 

  • Photgenerated carrier effects on terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n) oriented GaAs/In0.1Al0.9As strained multiple quantum wells International conference

    The International Workshop on Advanced Spectroscopy and Optical Materials  2013.07 

  • Comparison in Internal Strain Sensitivity between Polariscopy and Raman Scattering Spectroscopy in a ZnTe Single Crystal International conference

    Hideo Takeuchi

    The International Conference on II-VI Compounds and Related Materials, September 9-13, 2013, Nagahama Royal Hotel, Nagahama, Japan.   2013 

  • Photgenerated carrier effects on terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n) oriented GaAs/In0.1Al0.9As strained multiple quantum wells International conference

    H. Takeuchi, Souta Asai, and Masaaki Nakayama.

    The International Workshop on Advanced Spectroscopy and Optical Materials, July 14-19, 2013, Gdansk, Poland.   2013 

  • Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas International conference

    Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Masashi Konishi, Yuta Mori, Hideo Takeuchi, Tatsuo Shirahama, Tetsuya Yamada, and Kikuo Tominaga.

    11th APCPST (Asia Pacific Conference on Plasma Science and Technology) and 25th SPSM (Symposium on Plasma Science for Materials), October 2-5 Kyoto University ROHM Plaza, Kyoto Japan.   2012 

  • Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer International conference

    Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.

    The 5th International Conference on Optical, Optelectronic, and Photonic Materials and Application (ICOOPMA) June 3-7, 2012, Nara Prefectural New Public Hall, Nara, Japan.  2012 

  • Good stoichiometry achieved by simple vacuum-thermal deposition of GeTe and Ge2Sb2Te5 thin films International conference

    Hiroki Satoh, Toshihiro Nakaoka, and Hideo Takeuchi.

    The 5th International Conference on Optical, Optelectronic, and Photonic Materials and Application (ICOOPMA) June 3-7, 2012, Nara Prefectural New Public Hall, Nara, Japan.   2012 

  • Effects of crystal-plane distortion on enhancement of excitonic photoluminescence intensity in a ZnO wafer International conference

    Hideo Takeuchi

    The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials, July 1-6 2012, De Oosterpoort, Groningen, The Netherlands.   2012 

  • Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy International conference

    Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.

    The 14th International Conference on Phonon Scattering in Condensed Matter (PHONONS2012), July 8-12, 2012, University of Michigan, Ann Arbor, Michigan, USA.   2012 

  • Circular polariscopic measurement of a semi-insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to x-ray topography International conference

    Hideo Takeuchi

    The 38th International Symposium on Compound Semiconductors, May 22-26, 2011, Maritim proArte Hotel, Berlin, Germany  2012 

  • "Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy International conference

    Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.

    15th International Conference on Narrow Gap Systems (NGS15) August 1-5, 2011, Virginia Polytechnic Institute & State Universiherety, Virginia, USA.  2011 

  • Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method International conference

    H. Takeuchi, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.

    The International Conference on Luminescence & Optical Spectroscopy of Condensed Matter 2011, June 26-July 1 2011, Central Campus of the University of Michigan, Ann Arbor, Michigan, USA.  2011 

  • Terahertz radiation from the coherent longitudinal optical phonon-plasmon coupled mode in an i-GaAs/n-GaAs epitaxial structure International conference

    Shuichi Tsuruta, Hideo Takeuchi, and Masaaki Nakayama.

    15th International Conference on Thin Films (ICTF-15), November 8-11, 2011, Kyoto Terrsa, Kyoto, Japan.   2011 

  • Intense emission of terahertz electromagnetic wave originating from a surface surge current in an undoped GaAs/n-type GaAs epitaxial layer structure International conference

    Takayuki Hasegawa, Hideo Takeuchi, and Masaaki Nakayama.

    20th Anniversary Joint-Symposium of School of Science, University of Hyogo, International Symposium on Bioimaging and Surface Science, February 26-27, 2011, University of Hyogo, Hyogo, Japan  2011 

  • Circular polariscopic analysis of a ZnO wafer for highly sensitive and speedy evaluation of residual strains: Its relation with x-ray diffraction pattern and topography International conference

    Hideo Takeuchi

    15th International Conference on II-VI Compounds (II-VI 2011), August 21-26 2011, Ocean Coral & Turquesa, Riviera Maya, Mexico.  2011 

  • Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes International conference

    Hideo Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.

    The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10), June 20-25, 2010, APS Conference Center, Argonne National Laboratory, Argonne, Illinois, USA  2010 

  • Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures International conference

    Hideo Takeuchi , J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.

    The 37th International Symposium on Compound Semiconductors (ICSC2010) May 31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan.  2010 

  • Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves International conference

    Hideo Takeuchi, Junichi Yanagisawa, and Masaaki Nakayama.

    The 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14) July 13-17, 2009, Sendai, Japan.  2009 

  • Observation and quantification of the direction reversal of the surface band herebending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements International conference

    Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama.

    The 8th International Conference on Nitride Semiconductors (ICNS-8) Oct. 18-23, 2009, Jeju-island, Korea.  2009 

  • Intense emission of THz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure International conference

    Hideo Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama.

    The 35th International Symposium on Compound Semiconductors (ICSC2008) September 21-24, 2008, Europa-Park, Rust, Germany.  2008 

  • Photoluminescence-excitation spectroscopy for probing effects of plasma-induced surface damage on carrier transports in AlxGa1-xGaN heterostructures International conference

    Hideo Takeuchi, Y. Yamamoto, Y. Kamo, T. Kunii, T. Oku, T. Shirahama, H. Tanaka and M. Nakayama.

    The 7th International Conference on Nitride Semiconductors, September 16-21, 2007, MGM Hotel, Las Vegas, Nevada, U.S.A.  2007 

  • Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering International conference

    W. Susaki, S. Ukawa, S. Yokota, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, and Y. Mihashi.

    The 11th International Conference on Modulated Semiconductor Structures (MSS11), July 14 - 18, 2003, Nara New Public Hall, Nara, Japan.  2003 

  • Line-shape analysis of Franz-Keldysh oscillations from a base-emitter junction in an InGaP/GaAs hetero- junction bipolar transistor structure International conference

    Hideo Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama.

    The 11th International Conference on Modulated Semiconductor Structures (MSS11), July 14 - 18, 2003, Nara New Public Hall, Nara, Japan.  2003 

  • Analysis of a phase factor of Franz-Keldysh oscillations in GaAs/AlGaAs heterostructures International conference

    H. Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama.

    The 5th Topical Workshop of Heterostructure Microelectronics (TWHM 2003), January 21-24, 2003, Nago, Okinawa, Japan.  2002 

  • SiC surface damage originating from synergy effect of Ar plasma ion and plasma-induced ultraviolet light irradiations International conference

    R. Kawakami , M. Niibe, H. Takeuchi, M. Konishi, Y. Mori, T. Shirahama, T. Yamada, and K. Tominaga.

    25th International Conference on Atomic Collisions in Solids, October 21-25, 2012, Kyoto, Japan.   2002 

  • Coherent phonon-plasmon coupled modes in (InAs)1/(GaAs)m strained-layer superlattices International conference

    H. Takeuchi, K. Mizoguchi, and M. Nakayama.

    The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications , May 27-31, 2001, Ishikawa, Japan.  2001 

  • The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications , May 27-31, 2001, Ishikawa, Japan. International conference

    H. Takeuchi, K. Mizoguchi, T. Hino, and M. Nakayama

    The 10th International Conference on Phonon Scattering in Condensed Matter (Phonon 2001), August 12-17, 2001, New Hampshire, U.S.A.  2001 

  • Mid-infrared electroluminescence from the G2-G1 intersubband transition using G-X electron injection in a GaAs/AlAs double-quantum-well superlattice International conference

    C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, H. Takeuchi, and M. Nakayama.

    The 10th International. Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Ishikawa, Japan, 2001.   2001 

  • Effects of a miniband structure on coherent LO phonon-plasmon coupled modes in an (InAs)1/(GaAs)30 strained-layer superlattice International conference

    H. Takeuchi, K. Mizoguchi, T. Aida, and M. Nakayama.

    The 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 12), August 27-31, Sante Fe, New Mexico, U.S.A.  2001 

  • Dynamical properties of coherent plasmon coupled with LO phonon in InAs/GaAs strained superlattices International conference

    K. Mizoguchi, H. Takeuchi, and M. Nakayama.

    International Conference on Photoinduced Phase Transitions, their Dynamics and Precursor, November 14-16, 2001, Tsukuba, Ibaragi, Japan.   2001 

  • Coherent longitudinal optical phonons in GaSb/AlSb superlattices International conference

    H. Takeuchi, K. Mizoguchi, M. Nakayama, H. Nishimura, K. Kuroyanagi, and T. Aida.

    The Third SANKEN International Symposium, "Advanced Nanoelectronics: Devices, Materials, and Computing", March 15, 2000, SANKEN, Osaka University, Osaka, Japan.  2000 

  • Intersubband electroluminescence using X-G carrier injection in a GaAs/AlAs double-quantum-well superlattice International conference

    C. Domoto, N. Ohtani, K. Kuroyanagi, P. O. Vaccaro, T. Nishimura, H. Takeuchi, and M. Nakayama.

    The 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 2000.  2000 

  • Initial phase difference between coherent GaSb-like and AlSb-like LO phonons in GaSb/AlSb superlattices International conference

    H. Takeuchi, K. Mizoguchi, M. Nakayama, K. Kuroyanagi, and T. Aida.

    The 25th International Conference on the Physics of Semiconductors, September 18, 2000, Osaka International Convention Center, Osaka, Japan  2000 

  • Light-hole Stark-ladder photoluminescence induced by heavy-hole-light-hole resonance in a GaAs/InAlAs superlattice International conference

    K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.

    The 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, Japan, 1999.   1999 

  • Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field International conference

    M. Ando, M. Nakayama, H. Takeuchi, H. Nishimura, N. Ohtani, N. Egami, M. Hosoda, and H. Mimura.

    The 1999 Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter, Osaka, Japan, 1999.   1999 

  • Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice International conference

    K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.

    The 26th Int. Symp. on Compound Semiconductors, Berlin, Germany, 1999.   1999 

  • Structural changes during photo-induced and thermal crystallization processes in evaporated amorphous GeSe2 films by Raman scattering International conference

    Osamu Matsuda, Hideo Takeuchi, Yong Wang, Kohici Inoue, and KazuoF Murase.

    The 7th Int. Conf. on the Structure of Non-Crystalline Materials, Chia Laguna, Sardenga, Italy,1997.  1997 

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Industrial Property Rights

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Collaborative research (seeds) keywords

  • Terahertz time-domain spectroscopy

    Category:Electric & Electronics 

  • Photoreflectance evaluation of compound semiconductor epitaxial wafers for electronic and otpical devices

    Category:Electric & Electronics 

  • Reliability and/or surface diagnosis testers using photoreflectance spectroscopy

    Category:Electric & Electronics 

  • Application of terahertz waves from coherent LO phonons and LO-phonon-plasmon coupled mode to industry fields such as wireless communications (5~10 THz range)

    Category:Electric & Electronics 

Grant-in-Aid for Scientific Research

  • Design guideline for frequency tunable terahertz electromagnetic wave emitters on the basis of semiconductor physics

    Grant-in-Aid for Young Scientists(B)  2010.04

Joint research

  • Design guideline for terahertz electromagnetic wave emitters with the use of semiconductor epilayers controlled by ion irradiations: Feasibility study using single epilayers

    2023.04

  • Design guideline for terahertz electromagnetic wave emitters with the use of semiconductor epilayers controlled by ion irradiations: Feasibility study using single epilayers

    The National Institute for Fusion Science (NIFS)  2022.04

Contract research

  • 高効率高出力なワイドバンドギャップ半導体デバイスの基板材料の残留応力および熱伝導率に対するクロスニコル像を用いた簡易評価技術開発

    2010.10

Incentive donations / subsidies

  • Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method

    2011

Other subsidies, etc.

  • 15th International Conference on II-VI Compounds

    Nippon Sheet Glass Foundation for Materials Science and Engineering  2011

Charge of on-campus class subject

  • 光物性工学特論

    2022   Weekly class   Graduate school

  • 技術と環境/杉本[全]S

    2022   Weekly class   Graduate school

  • 前期特別研究(電子情報系)

    2022   Intensive lecture   Graduate school

  • 特別演習(光物性工学)

    2022   Intensive lecture   Graduate school

  • 後期特別研究(電子情報系)

    2022   Intensive lecture   Graduate school

  • ゼミナール(電子情報系)

    2022   Intensive lecture   Graduate school

  • 卒業研究(電子/物理工学科)

    2022   Intensive lecture   Undergraduate

  • Physics of Semiconductor Devices I

    2021   Weekly class   Undergraduate

  • 特別演習(電子・物理工学I)

    2020     Graduate school

  • 電子・物理工学概論

    2020     Undergraduate

  • 卒業研究

    2020     Undergraduate

  • 特別演習(光物性工学I)

    2020     Graduate school

  • 外書講読

    2020     Undergraduate

  • 電子・物理工学実験II

    2020     Undergraduate

  • 量子エレクトロニクス

    2020     Undergraduate

  • 工業数学III演習

    2020     Undergraduate

  • 特別演習(光物性工学II)

    2020     Graduate school

  • 工業数学III演習

    2019     Undergraduate

  • 量子エレクトロニクス

    2019     Undergraduate

  • 電子・物理工学実験II

    2019     Undergraduate

  • 外書講読

    2019     Undergraduate

  • 卒業研究

    2019     Undergraduate

  • 電子・物理工学概論

    2019     Undergraduate

  • 技術と環境

    2019     Undergraduate

  • 特別演習(電子・物理工学I)

    2019     Graduate school

  • 光物性工学特論

    2019     Graduate school

  • 特別演習(光物性工学I)

    2019     Graduate school

  • 特別演習(光物性工学II)

    2019     Graduate school

  • Special Exercise(Applied Physics I)

    2018     Graduate school

  • Special Exercise(Optical Properties and Functions of Materials II)

    2018     Graduate school

  • Special Exercise(Optical Properties and Functions of Materials I)

    2018     Graduate school

  • Advanced Lecture on Optical Properties and Functions of Materials

    2018     Graduate school

  • Fundamentals of Quantum Electronics

    2018     Undergraduate

  • Applied Physics & Electrical Engineering Experiments II

    2018     Undergraduate

  • 外書購読

    2018     Undergraduate

  • 卒業研究

    2018     Undergraduate

  • Introduction to Applied Physics and Electronics

    2018     Undergraduate

  • Seminar in Industrial Mathematics III

    2018     Undergraduate

  • 工業数学III演習

    2017     Undergraduate

  • 量子エレクトロニクス

    2017     Undergraduate

  • 電子・物理工学実験II

    2017     Undergraduate

  • 外書講読

    2017     Undergraduate

  • 卒業研究

    2017     Undergraduate

  • 電子・物理工学概論

    2017     Undergraduate

  • 光物性工学特論

    2017     Graduate school

  • 特別演習(光物性工学II)

    2017     Graduate school

  • 特別演習(光物性工学I)

    2017     Graduate school

  • 技術と環境

    2016     Undergraduate

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Charge of off-campus class subject

  • 物理学実験

    Institution:Osaka Institute of Technology

  • 電子システム工学特別演習

    Institution:The University of Shiga Prefecture

  • 光物性特論

    Institution:The University of Shiga Prefecture

  • 電子システム工学特論

    Institution:The University of Shiga Prefecture

  • 光エレクトロニクス

    Institution:The University of Shiga Prefecture

  • 電子システム工学実験IV

    Institution:The University of Shiga Prefecture

  • 電子システム工学演習III

    Institution:The University of Shiga Prefecture

  • 半導体デバイス工学

    Institution:The University of Shiga Prefecture

  • 電子システム工学実験II

    Institution:The University of Shiga Prefecture

  • 電子システム工学実験I

    Institution:The University of Shiga Prefecture

  • 物性デバイス基礎論

    Institution:The University of Shiga Prefecture

  • 科学技術英語

    Institution:The University of Shiga Prefecture

  • 物理学実験

    Institution:The University of Shiga Prefecture

  • 人間探求学

    Institution:The University of Shiga Prefecture

  • 卒業研究

    Institution:The University of Shiga Prefecture

  • 量子エレクトロニクス

  • 科学技術英語

  • 特別演習 (光物性工学Ⅱ)

  • 物理学実験

    Institution:Osaka Institute of Technology

  • 物理学実験

  • 物性デバイス基礎論

  • 技術と環境

    Institution:Osaka City University

  • 工業数学III演習

  • 大学院特別演習(電子・物理工学I)

  • 外書購読

  • 電子システム工学実験I

  • 半導体デバイス工学

  • 光物性特論

  • 光物性工学特論

  • 光エレクトロニクス

  • 人間探求学

  • 電子物理工学概論

  • 電子・物理工学実験II

  • 電子システム工学特論

  • 電子システム工学特別演習

  • 電子システム工学演習III

  • 電子システム工学実験IV

  • 電子システム工学実験II

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Faculty development activities

  • 工学FDセミナー「高等学校における学習指導要領改定に伴う情報科教育の今」   2023

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    聴講と質疑応答。

  • 全学FD/SD研修(全教職員対象)アクセシビリティセンター研修  2022

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    本学では、障がいのある学生に対する合理的配慮の提供やアクセシビリティセンターなどの支援体制、そしてSOGI(性的指向・性自認)に関する取り組みに関し、全ての教職員向けのFD/SD研修を、下記のとおりオンデマンド動画型で行うこととなりました

  • 工学FDセミナー『教育改善のための、ポートフォリオシステム「てぃら・みす」活用法』  2022

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    講師:国際基幹教育機構 星野聡孝教授(高等教育研究開発センター副センター長)
    共催:工学部・工学研究科教務委員会、高等教育研究開発センター

    内容:
    学生による学びのふり返り、そして、これを元にした教員による教育のふり返り等を
    サポートするためのポートフォリオシステム「てぃら・みす」の活用法について、
    ご紹介します。

  • アクセシビリティセンター研修(2回目,10月開催分)  2022

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    学生課より、添付の研修依頼がありましたので、
    お知らせします。

    本研修は障がいのある学生への合理的配慮が義務付けられたことや
    性的指向や性自認の学生への支援について全教職員を対象に実施いたします。
    2つの動画とアンケート回答を含めても30分以内に終わりますので全職員の
    実施をお願いします。
     なお、分野事務様におかれましては、各分野で雇用されている非常勤職員にも
    ご案内いただけると幸いです。

    対象:全教職員
    期限:なるべく10月19日(水)までに視聴し、アンケート回答ください。

  • 全学FD事業「第1回教育改革フォーラム」  2022

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    第1回教育改革フォーラム
    「あらためてFaculty Developmentについて考える」

    講演:「FDの難しさと面白さ-コロナ禍を経て考える-」(松下佳代京都大学教授)
    コメント:西垣順子(高等教育研究開発センター)
    日時:10月12日水曜日 15時~17時
    開催方法:オンライン開催(Zoomミーティング)

  • 新課程(高等学校学習指導要領改訂)に関する講演会  2022

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    講演内容:
    工学FD活動としても意義の有るものですので、自己点検評価や認証評価の際には、エビデンスとして記載可能であると考えています。つきましては、お時間の許す限り受講をお願いするものです。

    現在の高校1年生より新学習指導要領に則り新しいカリキュラムで高校教育が実施されています。このような生徒が受験するのが2年後に実施される2025年度入試であり、共通テストでも「情報」が導入される事でご存じの方も多いかと思います。

    情報以外にも理科や数学にも変更があり、2025年度入学者に関しては大学においても、これらを配慮した教育を実施する必要があります。今回の講演会はこれら新学習指導要領においてどのような変革があるかについてお話しいただきます。

  • 「大学院生のためのキャリアパス支援説明会」(兼リーディングプログラム説明会)  2021

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    聴講

  • 第30回FDワークショップ「ヤングケアラー・若者ケアラー問題を考える ―家族・親族の介護・看護を担う学生への支援―」  2021

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    聴講

  • 第29回教育改革シンポジウム・第19回FD研究会  2021

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    聴講

  • FD活動への貢献  2018

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    講演「全学FD研修会(第26回教育改革シンポジウム)」への参加と聴講。

  • FD活動への貢献  2018

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    講演「第20回 教育支援のためのFDワークショップ(授業デザインWS 12)」への参加と聴講。

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Original item・Special report (Education Activity)

  • 2022

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    Original item:実験演習科目「電子・物理工学実験I」にて実施される研究開発実務研修(会社/工場見学)の実施(ハイドロエッジ株式会社および関西電力株式会社堺港発電所)

    Special report:本学科では学生への技術者意識の向上と就職等の動機づけを目的として,独自に「研究開発実務研修」(会社/工場見学)を実施している(単なる見学ではなく事前・事後レポート等で評価を行っている)。本年度は対面形式(実地訪問)で小職がこの業務に対応し,ハイドロエッジ株式会社および関西電力株式会社堺港発電所の見学会を実施した。詳細な内容内科な通り。

    実施日: 7月12日火曜日,7月19日火曜日,
    時間帯:13時00分~18時00分
    内容: (1)次世代エネルギーを担う水素産業の動向学修,(2)LNG火力発電所に関する学修。(3)電力事業環境を取り巻く現在の動向に関する学修。
    加えて本学OBとの談話を実施。

  • 2021

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    Original item:実験演習科目「電子・物理工学実験I」にて実施される研究開発実務研修(会社/工場見学)の実施(オンライン形式,ローム株式会社)。

    Special report:本学科では学生への技術者意識の向上と就職等の動機づけを目的として,独自に「研究開発実務研修」(会社/工場見学)を実施している(単なる見学ではなく事前・事後レポート等で評価を行っている)。本年度はオンライン形式で小職がこの業務に対応し,ローム株式会社へのオンライン見学を行った。詳細な内容内科な通り。

    実施日: 7月20日火曜日
    時間帯:13時30分~15時
    内容: (1)ローム株式会社の概要,(2) LSI製造工程の基礎[一般論] (3)半導体産業の動向とそれに対するローム株式会社の商品開発戦略。
    加えて本学OBとの談話を実施。

  • 2019

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    Original item:2017年度電子物理工学科入学生学年相談員。

  • 2019

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    Original item:実験演習科目「電子・物理工学実験I」にて実施される研究開発実務研修(会社/工場見学)の実施(日新電機株式会社)。

    Special report:本学科では学生への技術者意識の向上と就職等の動機づけを目的として,独自に「研究開発実務研修」(会社/工場見学)を実施している(単なる見学ではなく事前・事後レポート等で評価を行っている)。本年度は当番としてこの業務に対応し,日新株式会社への訪問を行った。詳細な内容内科な通り。

    訪問日: 6月25日火曜日
    時間帯: 15時30分~17時
    見学内容: (1)配電盤工場の見学,(2)変圧器工場の見学
    見学の前に御社の概要や半導体産業の動向の説明。
    加えて本学OBとの談話を実施。

  • 2018

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    Original item:講演「リーディング大学院(博士へのいざない)」への参加と聴講。

  • 2018

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    Original item:2017年度電子物理工学科入学生学年相談員。

  • 2018

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    Original item:国連 Academic Impact Activity講演会への参加と聴講。

  • 2018

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    Original item:実験演習科目「電子・物理工学実験I」にて実施される研究開発実務研修(会社/工場見学)の実施(ローム株式会社)。

    Special report:本学科では学生への技術者意識の向上と就職等の動機づけを目的として,独自に「研究開発実務研修」(会社/工場見学)を実施している(単なる見学ではなく事前・事後レポート等で評価を行っている)。本年度は臨時で小職がこの業務に対応し,ローム株式会社への訪問を行った。詳細な内容内科な通り。

    訪問日: 6月26日火曜日
    時間帯:14時~16時
    見学内容: (1)LSI前工程,(2)分析関連
    見学の前に御社の概要や半導体産業の動向の説明。
    加えて本学OBとの談話を実施。
    なお工場見学終了後,教員二人でローム株式会社取締役2名の方と面談。今後の学生の採用と共同研究実施可否を議論した。先方より前向きな回答を得た。

  • 2017

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    Original item:2017年度電子物理工学科入学生学年相談員。

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Social Activities

  • 大阪南エネルギー懇話会

    Role(s): Consultant

    関西電力送配電株式会社  2022.04 - Now

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    Type:Other

    関西電力株式会社と関西電力送配電株式会社における事業の理解活動の一環として各界の有識者が事業運営にかかわる意見を交換し合う。年間3回~4回程度開催。無報酬。

  • On-line program ”Recommendation of reading” Vol. 9, Collaboration and Contribution Center for Community, Osaka City Univesity

    Role(s): Contributor

    Collaboration and Contribution Center for Community, Osaka City Univesity  On-line program ”Recommendation of reading” Vol. 9  2020.06 - 2020.08

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    Audience: Junior high school students, High school students, Teachers

    Type:Internet

    Number of participants:1(人)

  • On-line program ”Recommendation of reading” Vol. 9, Collaboration and Contribution Center for Community, Osaka City Univesity

    Role(s): Contributor

    Collaboration and Contribution Center for Community, Osaka City Univesity  On-line program ”Recommendation of reading”, Collaboration and Contribution Center for Community, Osaka City Univesity  2020.06 - 2020.08

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    Type:Internet

  • 光の性質を調べてみよう

    Role(s): Lecturer

    滋賀県教育委員会・高大連携講座  滋賀県立大学  2012.08

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    Audience: High school students

    Type:Cooperation with government and educational institutions

    滋賀県立大学では,夏休みの期間を利用して滋賀県教育委員会及び滋賀県私立中学高等学校連合会と共催する「大学連携講座」を開催している。高大連携講座は,高校生の方を対象に大学の教育内容や研究の様子などを知ってもらい,進学への動機付けにしていただくことを目的としいる。

    平成24年度高大連携講座実績
    大学連携講座(県教育委員会と共催)
    日程 8月20日(月)、21日(火)、22(水)
    テーマ 体験しよう!工学の不思議
    20日 講義・実験「無機ナノ粒子の基礎と応用 - 電磁ナノ粒子の魅力」
    21日 講義・実験「切る、削る、磨くを観察して、ものつくりの史実を知る!!」
    22日 講義・実験「光の性質を調べてみよう!」

  • エレクトロニクスの最前線: 暮らしを支えるエレクトロニクスの先端技術

    Role(s): Lecturer

    滋賀県教員研修講座: 先端技術講座  滋賀県立大学  2009.08

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    Audience: Teachers

    Type:Cooperation with government and educational institutions

    滋賀県内の高校教員を対象とした研修(リカレント教育)。

Academic Activities

  • Organizing Comittee The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

    Role(s): Planning, management, etc.

    2018.10 - 2019.08

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    Type:Academic society, research group, etc. 

International exchange activities

  • Investigateion of ultrafast optical dynamics of Low-temperature-grown GaAs and Bi-contained III-V semiconductors (Collaboration with Rachel Goldman's Lab. at Michigan University)

    Field category :Research

    Country name :United States of America   2018.04 - Now

Original item / Special report (Management administration)

  • 2022

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    Original item:サークル(部活動)顧問。ストリートダンスクラブSPLASH

Other

  • Job Career

    2013.04 - Now

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    Osaka City University Associate Professor