The Optical Society of America (OSA)

  Overseas

Institute of Physics (IOP)

2021.08 - Now   Overseas

Mitsubishi Electric Corporation

2002.04 - 2008.02

Mitsubishi Electric Corporation

2002.04 - 2008.02

Osaka Institute of Technology

1999.04 - 2002.03

Osaka Institute of Technology   General Education Course, Faculty of Engineering

1999.04 - 2002.03

ROHM Co. Ltd.,

1997.04 - 1999.03

ROHM Co., Ltd.

1997.04 - 1999.03

Screening effects of photogenerated carriers on terahertz radiation from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In<inf>0.1</inf>Al<inf>0.9</inf>As strained multiple quantum wells Reviewed

Takeuchi H, Asai S, Nakayama M.

Journal of Physics: Conference Series (IOP Publishing)   906 ( 1 )   2017

Longitudinal Optical Phonon-Plasmon Coupled Mode in Undoped GaAs/n-Type GaAs Epitaxial Structures Observed by Raman Scattering and Terahertz Time-Domain Spectroscopic Measurements: Difference in Observed Modes and Initial Polarization Effects Reviewed

Takeuchi H, Sumioka T, Nakayama M.

IEEE Transactions on Terahertz Science and Technology (IEEE)   7 ( 2 )   124 - 130   2017（ ISSN:2156-342X ）

Effects of photogenerated carrier scattering on the decay process of coherent longitudinal optical phonons in an undoped GaAs/ n -type GaAs epitaxial structure investigated by terahertz time-domain spectroscopy Reviewed

Takeuchi H, Sumioka T, Nakayama M.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films (AVS)   35 ( 4 )   04D104   2017（ ISSN:0734-2101 ）

Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures Reviewed

Takeuchi H, Asai S, Tsuruta S, Sumioka T, Nakayama M.

IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IEEE)   2015

Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film Reviewed

Nakayama M, Nakamura S, Takeuchi H, Koizumi A, Fujiwara Y.

Applied Physics Letters (AIP Publishing)   106 ( 1 )   2015（ ISSN:0003-6951 ）

Intermediate range order in Ge-(Sb)-Te amorphous films prepared by vacuum thermal evaporation and electrochemical metallization memory prepared by RF magnetron sputtering

Toshihiro Nakaoka, Hiroki Satoh, Yukiomi Nishiyama, Shimon Kida, and Yusuke Imanishi, Saori Honjo, and Hideo Takeuchi

Proceedings of The 27th Symposium on Phase Change Oriented Science (PCOS 2015) pp.26-29.   2015

Dynamical properties of terahertz radiation from coherent longitudinal optical phonon-plasmon coupled modes in an undoped GaAs/n-type GaAs epitaxial structure Reviewed

Sumioka T, Takeuchi H, Nakayama M.

IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IEEE)   2015

Detection sensitivities of photoluminescence spectroscopy and polariscopy to residual strains in a (110)-oriented ZnTe single crystal: Explore of strain-sensitivity inspection techniques Reviewed

Takeuchi H.

Physics Procedia (Elsevier)   76   4 - 10   2015

Photoreflectance spectroscopy of franz-keldysh oscillations from semiconductor heterostructures for electronic and optoelectronic devices and components

Takeuchi H.

Optical Spectroscopy: Technology, Properties and Performance   63 - 96   2014

Polariscopy: Its high sensitivity to internal/residual strains of semiconductor single crystal wafers

Takeuchi H.

Optical Spectroscopy: Technology, Properties and Performance   173 - 198   2014

Polariton characteristics of photoluminescence dynamics of exciton-exciton scattering in GaAs/AlAs multiple quantum wells Reviewed

Furukawa Y, Takeuchi H, Nakayama M.

Journal of the Physical Society of Japan (The Physical Society of Japan)   83 ( 5 )   54709 - 1-6   2014（ ISSN:0031-9015 ）

Comparison in internal strain sensitivity between polariscopy and Raman scattering spectroscopy in a (110)-oriented ZnTe single crystal Reviewed

Takeuchi H.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   11 ( 7-8 )   1194 - 1197   2014

Enhancement effects on excitonic photoluminescence intensity originating from misaligned crystal blocks and polycrystalline grains in a ZnO wafer Reviewed

Takeuchi H.

European Physical Journal B (EDP Science and Springer)   86 ( 2 )   2013

Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Tsuruta S, Takeuchi H, Yamada H, Hata M, Nakayama M.

Journal of Applied Physics (AIP Publishing)   113 ( 14 )   2013（ ISSN:0021-8979 ）

Surface damage of 6H-SiC originating from argon plasma irradiation Reviewed

Kawakami R, Niibe M, Takeuchi H, Konishi M, Mori Y, Shirahama T, Yamada T, Tominaga K.

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (Elsevier)   315   213 - 217   2013

Terahertz radiation from the coherent longitudinal optical phonon-plasmon coupled mode in an i-GaAs/n-GaAs epitaxial structure Reviewed

Tsuruta S, Takeuchi H, Nakayama M.

Journal of Physics: Conference Series (IOP Publishing)   417 ( 1 )   2013

Voltage-controllable terahertz radiation from coherent longitudinal optical phonons in a p-i-n diode structure of GaAs Reviewed

Nakayama M, Asai S, Takeuchi H, Ichikawa O, Hata M.

Applied Physics Letters (AIP Publishing)   103 ( 14 )   2013（ ISSN:0003-6951 ）

Characteristics of ultrafast optical responses originating from non-equilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Hasegawa T, Takagi Y, Takeuchi H, Yamada H, Hata M, Nakayama M.

Journal of Applied Physics (AIP Publishing)   113 ( 20 )   2013（ ISSN:0021-8979 ）

Characteristics of TiO<inf>2</inf> surfaces etched by capacitively coupled radio frequency N<inf>2</inf> and He plasmas Reviewed

Kawakami R, Niibe M, Nakano Y, Konishi M, Mori Y, Takeuchi H, Shirahama T, Yamada T, Tominaga K.

Journal of Physics: Conference Series (IOP Publishing)   441 ( 1 )   2013

First-sharp diffraction peaks in amorphous GeTe and Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>films prepared by vacuum-thermal deposition Reviewed

Nakaoka T, Satoh H, Honjo S, Takeuchi H.

AIP Advances (AIP Publishing)   2 ( 4 )   2012

Intense monochromatic terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In 0.1Al 0.9As strained multiple quantum wells Reviewed

Takeuchi H, Asai S, Tsuruta S, Nakayama M.

Applied Physics Letters (AIP Publishing)   100 ( 24 )   2012（ ISSN:0003-6951 ）

Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer Reviewed

Takeuchi H, Tsuruta S, Nakayama M.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   9 ( 12 )   2610 - 2613   2012

Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Hasegawa T, Takagi Y, Takeuchi H, Yamada H, Hata M, Nakayama M.

Applied Physics Letters (AIP Publishing)   100 ( 21 )   2012（ ISSN:0003-6951 ）

Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy Reviewed

Takeuchi H, Tsuruta S, Nakayama M.

AIP Conference Proceedings (AIP Publishing)   1506 ( 1 )   73 - 78   2012

Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method Reviewed

Hideo Takeuchi, Shuichi Tsuruta, Hisashi Yamada, Masahiko Hata, and Masaaki Nakayama.

Physic Procedia (Elsevier)   29   30 - 35   2012

Circular polariscopic analysis of a ZnO wafer for highly sensitive and speedy evaluation of residual strains: Its relation with X-ray diffraction pattern and topography Reviewed

Takeuchi H.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   9 ( 8-9 )   1817 - 1820   2012

Circular polariscopic measurement of a semi-insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to monochromatic Lang X-ray topography Reviewed

Takeuchi H.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   9 ( 2 )   266 - 269   2012

Enhancement of exciton photoluminescence intensity caused by the distortion of the crystal plane originating from the internal strain in a ZnO wafer Reviewed

Takeuchi H.

AIP Advances (AIP Publishing)   1 ( 4 )   2011

Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes Reviewed

Takeuchi H, Yanagisawa J, Tsuruta S, Yamada H, Hata M, Nakayama M.

Journal of Luminescence (Elsevier)   131 ( 3 )   531 - 534   2011（ ISSN:0022-2313 ）

Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n -type GaAs epitaxial layer structures Reviewed

Takeuchi H, Yanagisawa J, Tsuruta S, Yamada H, Hata M, Nakayama M.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   8 ( 2 )   343 - 345   2011

Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through the i-GaAs layer of an i-GaAs/n-GaAs epitaxial structure Reviewed

Takeuchi H, Tsuruta S, Nakayama M.

Journal of Applied Physics (AIP Publishing)   110 ( 1 )   2011（ ISSN:0021-8979 ）

Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer Reviewed

Takeuchi H, Tsuruta S, Nakayama M.

Applied Physics Letters (AIP Publishing)   98 ( 15 )   2011（ ISSN:0003-6951 ）

Circular polariscopic analysis of strains in a semi-insulating SiC wafer: Its high potential to complement the information obtained from monochromatic x-ray topography Reviewed

Takeuchi H.

Review of Scientific Instruments (AIP Publishing)   82 ( 3 )   2011

Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz spectroscopy Reviewed

Takeuchi H, Tsuruta S, Nakayama M.

AIP Conference Proceedings (AIP Publishing)   1416   84 - 87   2011

Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-Type GaAs epitaxial layer structures Reviewed

Takeuchi H, Yanagisawa J, Tsuruta S, Yamada H, Hata M, Nakayama M.

Japanese Journal of Applied Physics (The Japan Society of Applied Physics)   49 ( 8 PART 1 )   82001 - 082001-5   2010（ ISSN:0021-4922 ）

Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements Reviewed

Takeuchi H, Yanagisawa J, Hashimoto J, Nakayama M.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   7 ( 7-8 )   1844 - 1846   2010

Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves Reviewed

Takeuchi H, Yanagisawa J, Nakayama M.

Physics Procedia (Elsevier)   3 ( 2 )   1109 - 1113   2010

Intense emission of terahertz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure Reviewed

Takeuchi H, Yanagisawa J, Hasegawa T, Nakayama M.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   6 ( 6 )   1513 - 1516   2009

Effects of nitrogen incorporation on a direction of a surface band bending investigated by polarity of terahertz electromagnetic waves in GaAs<inf>1-x</inf>N<inf>x</inf>epitaxial layers Reviewed

Takeuchi H, Yanagisawa J, Hashimoto J, Nakayama M.

Journal of Applied Physics (AIP Publishing)   105 ( 9 )   2009（ ISSN:0021-8979 ）

Enhancement of terahertz electromagnetic wave emission from an undoped GaAsn -type GaAs epitaxial layer structure Reviewed

Takeuchi H, Yanagisawa J, Hasegawa T, Nakayama M.

Applied Physics Letters (AIP Publishing)   93 ( 8 )   2008（ ISSN:0003-6951 ）

High sensitivity of photoluminescenceexcitation spectroscopy for probing effects of plasma-induced surface damages on carrier transport in Al <inf>x</inf>Ga<inf>1-x</inf>N/GaN heterostructures Reviewed

Takeuchi H, Shirahama T, Yamamoto Y, Kamo Y, Kunii T, Oku T, Tanaka H, Nakayama M.

Physica Status Solidi (C) Current Topics in Solid State Physics (Wiley)   5 ( 6 )   1525 - 1528   2008

High sensitivity of Franz-Keldysh oscillations in photoreflectance spectra for probing morphology in AlxGa1-xN/GaN heterostructures Reviewed

Takeuchi H, Yamamoto Y, Kamo Y, Kunii T, Oku T, Wakaiki S, Nakayama M.

EPJ Applied Physics (EDP Science and Springer)   37 ( 2 )   119 - 122   2007（ ISSN:1286-0042 ）

Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in Alx Ga1-x N/GaN heterostructures Reviewed

Takeuchi H, Yamamoto Y, Kamo Y, Kunii T, Oku T, Shirahama T, Tanaka H, Nakayama M.

Journal of Applied Physics (AIP Publishing)   102 ( 4 )   2007（ ISSN:0021-8979 ）

Effects of a cap layer on built-in electric fields of AlxGa 1-xN/GaN heterostructures non-destructively probed by Franz-Keldysh oscillations Reviewed

Takeuchi H, Yamamoto Y, Kamo Y, Oku T, Nakayama M.

European Physical Journal B (EDP Science and Springer)   52 ( 3 )   311 - 314   2006（ ISSN:1434-6028 ）

Photovoltaic effects on Franz-Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAsn -type GaAs epitaxial layer structures Reviewed

Takeuchi H, Kamo Y, Yamamoto Y, Oku T, Totsuka M, Nakayama M.

Journal of Applied Physics (AIP Publishing)   97 ( 6 )   2005（ ISSN:0021-8979 ）

A C-band AlGaN/GaN HEMT with cat-CVD SiN passivation developed for an over 100 W operation Reviewed

Kamo Y, Kunii T, Takeuchi H, Yamamoto Y, Totsuka M, Shiga T, Minami H, Kitano T, Miyakuni S, Oku T, Inoue A, Nanjo T, Chiba H, Suita M, Oishi T, Abe Y, Tsuyama Y, Shirahana R, Ohtsuka H, Iyomasa K, Yamanaka K, Hieda M, Nakayama M, Ishikawa T, Takagi T, Marumoto K, Matsuda Y.

IEEE MTT-S International Microwave Symposium Digest (IEEE)   2005   495 - 498   2005

Line-shape analysis of Franz-Keldysh oscillations from a base-emitter junction in an InGaP/GaAs heterojunction bipolar transistor structure Reviewed

Takeuchi H, Yamamoto Y, Hattori R, Ishikawa T, Nakayama M.

Physica E: Low-Dimensional Systems and Nanostructures (Elsevier)   21 ( 2-4 )   693 - 697   2004（ ISSN:1386-9477 ）

Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunction bipolar transistor structures based on their line-shape analysis Reviewed

Takeuchi H, Yamamoto Y, Nakayama M.

Journal of Applied Physics (AIP Publishing)   96 ( 4 )   1967 - 1974   2004（ ISSN:0021-8979 ）

Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering Reviewed

Susaki W, Ukawa S, Yokota S, Ohno N, Takeuchi H, Yamamoto Y, Hattori R, Shima A, Mihashi Y.

Physica E: Low-Dimensional Systems and Nanostructures (Elsevier)   21 ( 2-4 )   793 - 797   2004

A high reliability GaN HEMT with SiN passivation by Cat-CVD Reviewed

Kunii T, Totsuka M, Kamo Y, Yamamoto Y, Takeuchi H, Shimada Y, Shiga T, Minami H, Kitano T, Miyakuni S, Nakatsuka S, Inoue A, Oku T, Nanjo T, Oishi T, Ishikawa T, Matsuda Y.

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC (IEEE)   197 - 200   2004

Interference Effect on the Phase of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures Reviewed

Takeuchi H, Yamamoto Y, Hattori R, Ishikawa T, Nakayama M.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers (The Japan Society of Applied Physics)   42 ( 11 )   6772 - 6778   2003

Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering Reviewed

Susaki W, Ukawa S, Ohno N, Takeuchi H, Yamamoto Y, Hattori R, Shima A, Mihashi Y.

IEEE International Symposium on Compound Semiconductors, Proceedings (IEEE)   2003   157 - 158   2003

Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures Reviewed

Takeuchi H, Yamamoto Y, Hattori R, Ishikawa T, Nakayama M.

IEICE Transactions on Electronics   E86-C ( 10 )   2015 - 2021   2003

Finite-size effects on coherent folded acoustic phonons in GaAs/AlAs superlattices Reviewed

Mizoguchi K, Takeuchi H, Hino T, Nakayama M.

Journal of Physics Condensed Matter (IOP Publishing)   14 ( 4 )   2002

Photoluminescence from high Γ-electron subbands and intersubband electroluminescence using x-Γ carrier injection in a simple GaAs/AlAs superlattice Reviewed

Domoto C, Nishimura T, Ohtani N, Kuroyanagi K, Vaccaro P.O, Aida T, Takeuchi H, Nakayama M.

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers (The Japan Society of Applied Physics)   41 ( 8 )   5073 - 5077   2002

Effects of a miniband structure on coherent LO phonon-plasmon coupled modes in an (InAs)1/(GaAs)30 strained-layer superlattice Reviewed

Takeuchi H, Mizoguchi K, Aida T, Nakayama M.

Physica B: Condensed Matter (Elsevier)   314 ( 1-4 )   422 - 426   2002

Coherent folded acoustic phonons in GaAs/AlAs superlattices with limited periodicity Reviewed

Takeuchi H, Mizoguchi K, Hino T, Nakayama M.

Physica B: Condensed Matter (Elsevier)   316-317   308 - 310   2002

Dynamical properties of coherent plasmons coupled with LO phonons in AN InAs/GaAs strained superlattice Reviewed

Mizoguchi K, Takeuchi H, Nakayama M.

Phase Transitions (Taylor & Sons)   75 ( 7-8 )   895 - 902   2002（ ISSN:0141-1594 ）

Phase difference between coherent GaSb-like and AlSb-like LO phonons in GaSb/AlSb superlattices Reviewed

H. Takeuchi, K. Mizoguchi, M. Nakayama, K. Kuroyanagi, and T. Aida.

Springer Proceedings in Physics (Springer)   87   451 - 452   2001.08

Simultaneous observation of coherent GaSb-like and AlSb-like longitudinal optical phonons in GaSb/AlSb superlattices Reviewed

Takeuchi H, Mizoguchi K, Nakayama M, Kuroyanagi K, Aida T, Nakajima M, Harima H.

Journal of the Physical Society of Japan (The Physical Society of Japan)   70 ( 9 )   2598 - 2602   2001

Coherent phonon-plasmon coupled modes in (InAs)1/(GaAs)m strained-layer superlattices Reviewed

H. Takeuchi, K. Mizoguchi, and M. Nakayama.

IPAP Conference Series (The Japan Society of Applied Physics)   2 ( CS2 )   207 - 209   2001

Intersubband electroluminescence using X-Gamma carrier injection in a GaAs/AlAs double-quantum-well superlattice

C Domoto, N Ohtani, K Kuroyanagi, PO Vaccaro, T Nishimura, H Takeuchi, M Nakayama

Springer Proceedings in Physics (Springer)   87   729 - 730   2001（ ISSN:0930-8989 ）

"Mid-infrared electroluminescence from the G2-G1 intersubband transition using G-X electron injection in a GaAs/AlAs Reviewed

C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, H. Takeuchi, and M. Nakayama.

IPAP Conference Series (The Japan Society of Applied Physics)   2 ( CS2 )   134 - 136   2001

Intersubband electroluminescence using X-G carrier injection in a GaAs/AlAs double-quantum-well superlattice Reviewed

C. Domoto, N. Ohtani, K. Kuroyanagi, P. O. Vaccaro, T. Nishimura, H. Takeuchi, and M. Nakayama.

Springer Proceedings in Physics (Springer)   87   729 - 730   2000.08

Coherent longitudinal optical phonons in GaSb/AlSb superlattices Reviewed

H. Takeuchi, K. Mizoguchi, M. Nakayama, H. Nishimura, K. Kuroyanagi, and T. Aida.

Special Issue, Memoirs of The Institute of Scientific and Industrial Research, Osaka University   57   292 - 293   2000.03

Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs superlattice Reviewed

Domoto C, Ohtani N, Kuroyanagi K, Vaccaro P.O, Takeuchi H, Nakayama M, Nishimura T.

Applied Physics Letters (AIP Publishing)   77 ( 6 )   848 - 850   2000

Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field Reviewed

Ando M, Nakayama M, Takeuchi H, Nishimura H, Ohtani N, Egami N, Hosoda M, Mimura H.

Journal of Luminescence (Elsevier)   87   411 - 414   2000

Light-hole Stark-ladder photoluminescence induced by heavy-hole-light-hole resonance in a GaAs/InAlAs superlattice Reviewed

Kuroyanagi K, Ohtani N, Egami N, Tominaga K, Hosoda M, Takeuchi H, Nakayama M.

Physica B: Condensed Matter (Elsevier)   272 ( 1-4 )   198 - 201   1999

Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice Reviewed

K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.

Institute of Physics Conference Series (IOP Publishing)   166   139 - 142   1999

Reversible mesoscopic structural transformations in vacuum evaporated amorphous Ge30Se70 film studied by Raman scattering Reviewed

Takeuchi H, Matsuda O, Murase K.

Journal of Non-Crystalline Solids (Elsevier)   238 ( 1-2 )   91 - 97   1998

Structural changes during photo-induced and thermal crystallization processes in evaporated amorphous GeSe2 films by Raman scattering Reviewed

Matsuda O, Takeuchi H, Wang Y, Inoue K, Murase K.

Journal of Non-Crystalline Solids (Elsevier)   232-234   554 - 559   1998

Hot excitons in CuCl and CuBr crystalline thin films grown by vacuum deposition Reviewed

Nakayama M, Soumura A, Hamasaki K, Takeuchi H, Nishimura H.

Physical Review B - Condensed Matter and Materials Physics (APS)   55 ( 15 )   10099 - 10104   1997

(11n)面方位GaAs/In_0.1Al_0.9As歪多重量子井戸におけるコヒーレントGaAs型縦光学フォノンからのテラヘルツ電磁波放射に対する光生成キャリアのスクリーニング効果 Reviewed

竹内日出雄, 浅井聡太, 中山正昭

日本物理学会講演概要集(CD-ROM)   73 ( 1 )   2018（ ISSN:2189-079X ）

Feドープβ-Ga₂O₃単結晶における自己束縛励起子の特性 Reviewed

三国祐亮, 竹内日出雄, 中山正昭

日本物理学会講演概要集(CD-ROM)   72 ( 2 )   2017（ ISSN:2189-079X ）

アンドープGaAs/n型GaAsエピ構造における縦光学フォノン・プラズモン結合モードの時間領域テラヘルツ分光とラマン散乱分光 Reviewed

竹内日出雄, 住岡隆弘, 中山正昭

日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017（ ISSN:2189-079X ）

アンドープGaAs/n型GaAsエピタキシャル構造における縦光学フォノンからのテラヘルツ電磁波減衰過程に対する光生成キャリアの影響 Reviewed

竹内日出雄, 住岡隆弘, 中山正昭

日本物理学会講演概要集(CD-ROM)   72 ( 2 )   2017（ ISSN:2189-079X ）

i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノン-プラズモン結合モードからのテラヘルツ電磁波放射の減衰過程 Reviewed

住岡隆裕, 竹内日出雄, 中山正昭

日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017（ ISSN:2189-079X ）

i-GaAs/n-GaAsとi-GaAs/p-GaAsエピタキシャル構造におけるテラヘルツ電磁波放射特性の対比 Reviewed

住岡隆裕, 竹内日出雄, 中山正昭

日本物理学会講演概要集(CD-ROM)   71 ( 2 )   2016（ ISSN:2189-079X ）

励起光エネルギーチューニングによるGaAs多層膜中の電子輸送過程の遷移 Reviewed

長谷川尊之, 竹内日出雄, 中山正昭

日本物理学会講演概要集(CD-ROM)   71 ( 1 )   2016（ ISSN:2189-079X ）

i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノン-プラズモン結合モードからのテラヘルツ電磁波発生ダイナミクス II Reviewed

住岡隆裕, 竹内日出雄, 中山正昭

日本物理学会講演概要集(CD-ROM)   71 ( 1 )   2016（ ISSN:2189-079X ）

Eu添加GaNエピタキシャル薄膜における発光励起スペクトルの特異性 Reviewed

中村聡志, 竹内日出雄, 小泉淳, 藤原康文, 中山正昭

日本物理学会講演概要集(CD-ROM)   70 ( 1 )   2015（ ISSN:2189-079X ）

i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノン-プラズモン結合モードからのテラヘルツ電磁波発生ダイナミクス Reviewed

住岡隆裕, 竹内日出雄, 中山正昭

日本物理学会講演概要集(CD-ROM)   70 ( 2 )   2015（ ISSN:2189-079X ）

10aPS-112 Pump-probe spectroscopy of nonequilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Hasegawa T., Takeuchi H., Yamada H., Hata M., Nakayama M.

Meeting abstracts of the Physical Society of Japan   69 ( 2 )   553 - 553   2014.08（ ISSN:1342-8349 ）

10aPS-93 Effects of exciton dissociation on Eu^<3+> photoluminescence in Eu-doped GaN epitaxial films Reviewed

Nakamura Satoshi, Takeuchi Hideo, Koizumi Atsushi, Fujiwara Yasufumi, Nakayama Masaaki

Meeting abstracts of the Physical Society of Japan   69 ( 2 )   548 - 548   2014.08（ ISSN:1342-8349 ）

27aAU-10 Polariton characteristics of photoluminescence dynamics of exciton-exciton scattering in GaAs/AlAs multiple quantum wells Reviewed

Furukawa Y., Takeuchi H., Nakayama M.

Meeting abstracts of the Physical Society of Japan   69 ( 1 )   689 - 689   2014.03（ ISSN:1342-8349 ）

28pCK-6 Raman scattering spectroscopy and terahertz-electromagnetic-wave generation of longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Takeuchi H., Asai S., Tsuruta S., Nakayama M.

Meeting abstracts of the Physical Society of Japan   69 ( 1 )   755 - 755   2014.03（ ISSN:1342-8349 ）

28pCK-5 Voltage-controllable terahertz radiation from coherent LO phonons in a GaAs p-i-n diode structure Reviewed

Nakayama M., Asai S., Takeuchi H., Ichikawa O., Hata M.

Meeting abstracts of the Physical Society of Japan   69 ( 1 )   755 - 755   2014.03（ ISSN:1342-8349 ）

27pCK-8 Transport mechanism of photogenerated carriers in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Hasegawa T., Takeuchi H., Yamada H., Hata M., Nakayama M.

Meeting abstracts of the Physical Society of Japan   69 ( 1 )   739 - 739   2014.03（ ISSN:1342-8349 ）

GaN:Eu結晶薄膜におけるEu³⁺発光に対する励起子解離効果 Reviewed

中村聡志, 竹内日出雄, 小泉淳, 藤原康文, 中山正昭

日本物理学会講演概要集   69 ( 2 )   2014（ ISSN:1342-8349 ）

Photoluminescence dynamics of exciton-exciton scattering in a GaAs/AlAs multiple quantum well Reviewed

Furukawa Y., Takeuchi H., Nakayama M.

Meeting abstracts of the Physical Society of Japan   68 ( 2 )   600 - 600   2013.08（ ISSN:1342-8349 ）

Non-equilibrium photocarrier transports and ultrafast optical responses in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Hasegawa T., Takeuchi H., Yamada H., Hata M., Nakayama M.

Meeting abstracts of the Physical Society of Japan   68 ( 2 )   692 - 692   2013.08（ ISSN:1342-8349 ）

Enhancement mechanism of terahertz radiation from coherent LO phonons in i-GaAs/n-GaAs epitaxial structures Reviewed

Nakamori Ippei, Takeuchi Hideo, Nakayama Masaaki

Meeting abstracts of the Physical Society of Japan   68 ( 2 )   687 - 687   2013.08（ ISSN:1342-8349 ）

26aXQ-8 Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures II Reviewed

Hasegawa T., Takagi Y., Takeuchi H., Yamada H., Hata M., Nakayama M.

Meeting abstracts of the Physical Society of Japan   68 ( 1 )   743 - 743   2013.03（ ISSN:1342-8349 ）

29aEH-5 Generation of intense terahertz electromagnetic waves from coherent LO phonons in (11n)-oriented GaAs/InAlAs strained multiple quantum wells II Reviewed

Asai S., Takeuchi H., Nakayama M.

Meeting abstracts of the Physical Society of Japan   68 ( 1 )   852 - 852   2013.03（ ISSN:1342-8349 ）

18aFB-2 Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures Reviewed

Hasegawa T., Takagi Y., Takeuchi H., Yamada H., Hata M., Nakayama M.

Meeting abstracts of the Physical Society of Japan   67 ( 2 )   613 - 613   2012.08（ ISSN:1342-8349 ）

19aHB-7 Terahertz spectroscopy of relaxation processes of coherent LO phonons in a GaSb/GaAs epitaxial structure Reviewed

Takeuchi H., Tsuruta S., Nakayama M.

Meeting abstracts of the Physical Society of Japan   67 ( 2 )   688 - 688   2012.08（ ISSN:1342-8349 ）

26pBL-6 Terahertz electromagnetic waves from longitudinal optical phonon-plasmon coupled mode in an uadoped GaAs/n-type GaAs epitaxiat structure Reviewed

Takeuchi H., Tsuruta S., Nakayama M.

Meeting abstracts of the Physical Society of Japan   67 ( 1 )   812 - 812   2012.03（ ISSN:1342-8349 ）

A High Reliability GaN HEMT with SiN Passivation by Cat-CVD Reviewed

KUNII Tetsuo, TOTSUKA Masahiro, KAMO Yoshitaka, YAMAMOTO Yoshitsugu, TAKEUCHI Hideo, SHIMADA Yoshiharu, SHIGA Toshihiko, MINAMI Hiroyuki, KITANO Toshiaki, MIYAKUNI Shinichi, NAKATSUKA Shigenori, INOUE Akira, OKU Tomoki, NANJO Takuma, OISHI Toshiyuki, ISHIKAWA Takahide, MATSUDA Yoshio

IEICE technical report. Microwaves   104 ( 552 )   25 - 30   2005.01（ ISSN:0913-5685 ）

Intercubband-transition electroluminescence in a GaAs/AlAs multiple-quantum-well structure Reviewed

Nakayama N, Taeuchi H., Domoto C., Nisimura T., 0htani N., Vaccaro P.O., Aida T.

Meeting abstracts of the Physical Society of Japan   57 ( 2 )   556 - 556   2002.08（ ISSN:1342-8349 ）

27aYE-4 Dynamics of coherent folded longitudinal acoustic phonons in long-period superlattices Reviewed

Hino T., Takeuchi H., Misoguchi K., Nakayama M., Nakashima S., Bartels A., Dekorsy T., Kurz H.

Meeting abstracts of the Physical Society of Japan   57 ( 1 )   712 - 712   2002.03（ ISSN:1342-8349 ）

27p-Z-10 Free-Exciton Photoluminescence in Cuprous-Halide Thin Films Grown by Vacuum Evaporation Reviewed

Soumura A., Hamasaki K., Takeuchi H., Nakayama M., Nishimura H.

Abstracts of the meeting of the Physical Society of Japan. Sectional meeting   1995 ( 2 )   250 - 250   1995.09

Can longitudinal optical phonons obtain longer decay time by introducing defects with the use of surface treatments? A terahertz time-domain spectroscopic study on GaAs epilayers International conference

Hideo Takeuchi, Yuto Omuku, Ryota Onoda Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama

The 35th International Conference on the Physics of Semiconductors (ICPS2022)  2022.06  ICPS2022

Terahertz time-domain spectroscopy of GaAs epitaxial layers treated with the use of fast atom bombardment International conference

Hideo Takeuchi, Yuto Omuku, Ryota Onoda Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama

The 31st International Conference on Defects in Semiconductors (ICDS31)  2021.06  ICDS31

時間領域テラヘルツ分光を用いたInSb単結晶におけるドーピングキャリア濃度によるフォトデンバー効果への影響の探査 Domestic conference

竹内日出雄，住岡俊裕，中山正昭

日本物理学会 第75年次大会(2020年)  2020.03 

高速原子ボンバードメント処理されたGaAsエピタキシャル層の時間領域テラヘルツ分光 Domestic conference

大椋祐斗,竹内日出雄,中山正昭,小野田稜太,中岡俊裕,内海淳,川崎繁男,小山政俊

第30回光物性研究会  2019.12 

時間領域テラヘルツ分光を用いた高速原子ボンバードメント処理によるGaAsエピタキシャル層表面の評価 Domestic conference

大椋祐斗,竹内日出雄,中山正昭,小野田稜太,中岡俊裕,内海淳 ,川崎繁男，小山政俊

日本物理学会2019年秋季大会  2019.09 

Terahertz emission from coherent longitudinal optical (LO) phonons and LO-phonon-plasmon coupled modes in a low-temperature-grown GaAs epitaxial layer International conference

Hideo Takeuchi, Takuya Nishimura, Masaaki Nakayama, Andra Chen, Richard L. Field, III, and Rachel S. Goldman

The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON21)  2019.07 

低温成長GaAsエピ層におけるコヒーレント縦光学フォノンおよび縦光学フォノン-プラズモン結合モードからのテラヘルツ放射 Domestic conference

竹内日出雄，西村拓也，中山正昭，A. Chen, R. L. Field, III， R. S. GoldmanB

日本物理学会 第74 回年次大会（2019 年）  2019.03 

(001)面方位および(110)面方位半絶縁性GaAs単結晶におけるコヒーレント縦光学(LO)フォノンおよびLOフォノン-プラズモン結合モードからのテラヘルツ電磁波発生 Domestic conference

西村拓也, 竹内日出雄, 中山正昭

第29回光物性研究会  2018.12 

(110)面方位半絶縁性GaAs単結晶におけるコヒーレント縦光学フォノンからのテラヘルツ電磁波発生 Domestic conference

西村拓也，竹内日出雄，中山正昭

日本物理学会第73回年次大会 (2018年)  2018.09 

(11n)面方位GaAs/In0.1Al0.9As歪多重量子井戸におけるコヒーレントGaAs型縦光学フォノンからのテラヘルツ電磁波放射に対する光生成キャリアのスクリーニング効果 Domestic conference

竹内日出雄，浅井聡太，中山正昭

日本物理学会 第 73 回年次大会（2018 年）  2018.09 

p-i-n GaAs構造におけるコヒーレント縦光学フォノンからのテラヘルツ電磁波発生のバイアス電圧制御 Domestic conference

西村拓也，竹内日出雄，中山正昭

第27回⽇本⾚外線学会研究発表会  2017.10 

Reliability Evaluation of a Passivation Thin Film Deposited on a GaAs Epilayer with Use of Photoreflectance Spectroscopy International conference

Hideo Takeuchi

29th International Conference on Defects in Semiconductors (ICDS 2017), July 31 – Aug.4, 2017, Matsue-Kunibiki messe, Matsue, Japan.  2017.08 

Screening effects of photogenerated carriers on terahertz radiation from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum we International conference

Hideo Takeuchi, Souta Asai, and Masaaki Nakayama.

The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON20), Hyatt Regency Hotel, Buffalo, NY USA (July 17-21, 2017).  2017.07 

Appearance of coherent LO phonons during the decay of LO-phonon‒plasmon coupled mode in an undoped GaAs/n-type GaAs epitaxial structure International conference

Takahiro Sumioka, Hideo Takeuchi, Masaaki Nakayama.

The 19th International Conference on Dynamical Processes in Excited States of Solids (DPC' 16), July 17-22, 2016, Chimie ParisTech, Paris, France.  2016 

Effects of photogenerated carrier scattering on the decay process of coherent longitudinal optical phonons in an undoped GaAs/n-type GaAs epitaxial structure investigated by terahertz time-domain spectroscopy International conference

Hideo Takeuchi, Takahiro Sumioka, and Masaaki Nakayama.

The Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2016), December 11-15, 2016, The Big Island of Hawaii, USA.   2016 

Dynamical properties of terahertz radiation from coherent longitudinal optical phonon-plasmon coupled modes in an undoped GaAs/n-type GaAs epitaxial structure International conference

Takahiro Sumioka, Hideo Takeuchi, and Masaaki Nakayama.

The 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) 2015, August 23-28, 2015, The Chinese University of Hong Kong, Hong Kong.   2015 

Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures International conference

Hideo Takeuchi, Souta Asai, Shuichi Tsuruta, Takahiro Sumioka, and Masaaki Nakayama.

The 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) 2015, August 23-28, 2015, The Chinese University of Hong Kong, Hong Kong.   2015 

Intermediate range order in Ge-(Sb)-Te amorphous films prepared by vacuum thermal evaporation and electrochemical metallization memory prepared by RF magnetron sputtering International conference

Toshihiro Nakaoka, Hiroki Satoh, Yukiomi Nishiyama, Shimon Kida, and Yusuke Imanishi, Saori Honjo, and Hideo Takeuchi.

The 27th Symposium on Phase Change Oriented Science (PCOS 2015), November 26-27, Atami New Fujiya Hotel, Atami, Japan.  2015 

Raman scattering spectroscopy and terahertz-electromagnetic-wave generation of longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures Domestic conference

2014.03 

GaAsダイオード構造におけるコヒーレントLOフォノンからのテラヘルツ電磁波発生の電圧制御 Domestic conference

-

日本物理学会第69回年次大会  2014.03 

Transport mechanism of photogenerated carriers in undoped GaAs/n-type GaAs epitaxial structures Domestic conference

2014.03 

Comparison of Detection Ability for Residual Strains in a (110)-oriented ZeTe Single Crystal between Photoluminescence Spectroscopy and Polariscopic Analysis: Explore of Strain-Sensitive Optical Characterizations International conference

Hideo Takeuchi

The International Conference on Luminescence and Optical Spectroscopy of Condensed Matter 2014, July 13-18, 2014, University of Wrocław, Wrocław, Poland.   2014 

Evaluation of passivation film characteristics grown on GaAs epilayers with use of photoreflectance spectroscopy Domestic conference

24th Symposium of Association for Condensed Matter Photophysics  2013.12 

Built-in electric field effects on terahertz ratiation from coherent LO phonons in i-GaAs/n-GaAs epitaxial structures Domestic conference

24th Symposium of Association for Condensed Matter Photophysics  2013.12 

Comparison in Internal Strain Sensitivity between Polariscopy and Raman Scattering Spectroscopy in a ZnTe Single Crystal International conference

The International Conference on II-VI Compounds and Related Materials  2013.09 

Damage Characteristics of SiC Surface by He plasma Domestic conference

2013.09 

Optical spectroscopic sensitivity for internal strains in a ZnTe single crystal Domestic conference

2013 Autumn Meeting of the Physical Society of Japan,  2013.09 

Enhancement mechanism of terahertz radiation from coherent LO phonons in i-GaAs/n-GaAs epitaxial structures Domestic conference

2013 Autumn Meeting of the Physical Society of Japan  2013.09 

Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures II Domestic conference

2013 Autumn Meeting of the Physical Society of Japan  2013.09 

Photgenerated carrier effects on terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n) oriented GaAs/In0.1Al0.9As strained multiple quantum wells International conference

The International Workshop on Advanced Spectroscopy and Optical Materials  2013.07 

Comparison in Internal Strain Sensitivity between Polariscopy and Raman Scattering Spectroscopy in a ZnTe Single Crystal International conference

Hideo Takeuchi

The International Conference on II-VI Compounds and Related Materials, September 9-13, 2013, Nagahama Royal Hotel, Nagahama, Japan.   2013 

Photgenerated carrier effects on terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n) oriented GaAs/In0.1Al0.9As strained multiple quantum wells International conference

H. Takeuchi, Souta Asai, and Masaaki Nakayama.

The International Workshop on Advanced Spectroscopy and Optical Materials, July 14-19, 2013, Gdansk, Poland.   2013 

Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas International conference

Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Masashi Konishi, Yuta Mori, Hideo Takeuchi, Tatsuo Shirahama, Tetsuya Yamada, and Kikuo Tominaga.

11th APCPST (Asia Pacific Conference on Plasma Science and Technology) and 25th SPSM (Symposium on Plasma Science for Materials), October 2-5 Kyoto University ROHM Plaza, Kyoto Japan.   2012 

Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer International conference

Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.

The 5th International Conference on Optical, Optelectronic, and Photonic Materials and Application (ICOOPMA) June 3-7, 2012, Nara Prefectural New Public Hall, Nara, Japan.  2012 

Good stoichiometry achieved by simple vacuum-thermal deposition of GeTe and Ge2Sb2Te5 thin films International conference

Hiroki Satoh, Toshihiro Nakaoka, and Hideo Takeuchi.

The 5th International Conference on Optical, Optelectronic, and Photonic Materials and Application (ICOOPMA) June 3-7, 2012, Nara Prefectural New Public Hall, Nara, Japan.   2012 

Effects of crystal-plane distortion on enhancement of excitonic photoluminescence intensity in a ZnO wafer International conference

Hideo Takeuchi

The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials, July 1-6 2012, De Oosterpoort, Groningen, The Netherlands.   2012 

Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy International conference

Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.

The 14th International Conference on Phonon Scattering in Condensed Matter (PHONONS2012), July 8-12, 2012, University of Michigan, Ann Arbor, Michigan, USA.   2012 

Circular polariscopic measurement of a semi-insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to x-ray topography International conference

Hideo Takeuchi

The 38th International Symposium on Compound Semiconductors, May 22-26, 2011, Maritim proArte Hotel, Berlin, Germany  2012 

"Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy International conference

Hideo Takeuchi, Syuichi Tsuruta, and Masaaki Nakayama.

15th International Conference on Narrow Gap Systems (NGS15) August 1-5, 2011, Virginia Polytechnic Institute & State Universiherety, Virginia, USA.  2011 

Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method International conference

H. Takeuchi, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.

The International Conference on Luminescence & Optical Spectroscopy of Condensed Matter 2011, June 26-July 1 2011, Central Campus of the University of Michigan, Ann Arbor, Michigan, USA.  2011 

Terahertz radiation from the coherent longitudinal optical phonon-plasmon coupled mode in an i-GaAs/n-GaAs epitaxial structure International conference

Shuichi Tsuruta, Hideo Takeuchi, and Masaaki Nakayama.

15th International Conference on Thin Films (ICTF-15), November 8-11, 2011, Kyoto Terrsa, Kyoto, Japan.   2011 

Intense emission of terahertz electromagnetic wave originating from a surface surge current in an undoped GaAs/n-type GaAs epitaxial layer structure International conference

Takayuki Hasegawa, Hideo Takeuchi, and Masaaki Nakayama.

20th Anniversary Joint-Symposium of School of Science, University of Hyogo, International Symposium on Bioimaging and Surface Science, February 26-27, 2011, University of Hyogo, Hyogo, Japan  2011 

Circular polariscopic analysis of a ZnO wafer for highly sensitive and speedy evaluation of residual strains: Its relation with x-ray diffraction pattern and topography International conference

Hideo Takeuchi

15th International Conference on II-VI Compounds (II-VI 2011), August 21-26 2011, Ocean Coral & Turquesa, Riviera Maya, Mexico.  2011 

Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes International conference

Hideo Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.

The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10), June 20-25, 2010, APS Conference Center, Argonne National Laboratory, Argonne, Illinois, USA  2010 

Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures International conference

Hideo Takeuchi , J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama.

The 37th International Symposium on Compound Semiconductors (ICSC2010) May 31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan.  2010 

Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves International conference

Hideo Takeuchi, Junichi Yanagisawa, and Masaaki Nakayama.

The 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14) July 13-17, 2009, Sendai, Japan.  2009 

Observation and quantification of the direction reversal of the surface band herebending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements International conference

Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama.

The 8th International Conference on Nitride Semiconductors (ICNS-8) Oct. 18-23, 2009, Jeju-island, Korea.  2009 

Intense emission of THz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure International conference

Hideo Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama.

The 35th International Symposium on Compound Semiconductors (ICSC2008) September 21-24, 2008, Europa-Park, Rust, Germany.  2008 

Photoluminescence-excitation spectroscopy for probing effects of plasma-induced surface damage on carrier transports in AlxGa1-xGaN heterostructures International conference

Hideo Takeuchi, Y. Yamamoto, Y. Kamo, T. Kunii, T. Oku, T. Shirahama, H. Tanaka and M. Nakayama.

The 7th International Conference on Nitride Semiconductors, September 16-21, 2007, MGM Hotel, Las Vegas, Nevada, U.S.A.  2007 

Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering International conference

W. Susaki, S. Ukawa, S. Yokota, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, and Y. Mihashi.

The 11th International Conference on Modulated Semiconductor Structures (MSS11), July 14 - 18, 2003, Nara New Public Hall, Nara, Japan.  2003 

Line-shape analysis of Franz-Keldysh oscillations from a base-emitter junction in an InGaP/GaAs hetero- junction bipolar transistor structure International conference

Hideo Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama.

The 11th International Conference on Modulated Semiconductor Structures (MSS11), July 14 - 18, 2003, Nara New Public Hall, Nara, Japan.  2003 

Analysis of a phase factor of Franz-Keldysh oscillations in GaAs/AlGaAs heterostructures International conference

H. Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama.

The 5th Topical Workshop of Heterostructure Microelectronics (TWHM 2003), January 21-24, 2003, Nago, Okinawa, Japan.  2002 

SiC surface damage originating from synergy effect of Ar plasma ion and plasma-induced ultraviolet light irradiations International conference

R. Kawakami , M. Niibe, H. Takeuchi, M. Konishi, Y. Mori, T. Shirahama, T. Yamada, and K. Tominaga.

25th International Conference on Atomic Collisions in Solids, October 21-25, 2012, Kyoto, Japan.   2002 

Coherent phonon-plasmon coupled modes in (InAs)1/(GaAs)m strained-layer superlattices International conference

H. Takeuchi, K. Mizoguchi, and M. Nakayama.

The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications , May 27-31, 2001, Ishikawa, Japan.  2001 

The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications , May 27-31, 2001, Ishikawa, Japan. International conference

H. Takeuchi, K. Mizoguchi, T. Hino, and M. Nakayama

The 10th International Conference on Phonon Scattering in Condensed Matter (Phonon 2001), August 12-17, 2001, New Hampshire, U.S.A.  2001 

Mid-infrared electroluminescence from the G2-G1 intersubband transition using G-X electron injection in a GaAs/AlAs double-quantum-well superlattice International conference

C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, H. Takeuchi, and M. Nakayama.

The 10th International. Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Ishikawa, Japan, 2001.   2001 

Effects of a miniband structure on coherent LO phonon-plasmon coupled modes in an (InAs)1/(GaAs)30 strained-layer superlattice International conference

H. Takeuchi, K. Mizoguchi, T. Aida, and M. Nakayama.

The 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 12), August 27-31, Sante Fe, New Mexico, U.S.A.  2001 

Dynamical properties of coherent plasmon coupled with LO phonon in InAs/GaAs strained superlattices International conference

K. Mizoguchi, H. Takeuchi, and M. Nakayama.

International Conference on Photoinduced Phase Transitions, their Dynamics and Precursor, November 14-16, 2001, Tsukuba, Ibaragi, Japan.   2001 

Coherent longitudinal optical phonons in GaSb/AlSb superlattices International conference

H. Takeuchi, K. Mizoguchi, M. Nakayama, H. Nishimura, K. Kuroyanagi, and T. Aida.

The Third SANKEN International Symposium, "Advanced Nanoelectronics: Devices, Materials, and Computing", March 15, 2000, SANKEN, Osaka University, Osaka, Japan.  2000 

Intersubband electroluminescence using X-G carrier injection in a GaAs/AlAs double-quantum-well superlattice International conference

C. Domoto, N. Ohtani, K. Kuroyanagi, P. O. Vaccaro, T. Nishimura, H. Takeuchi, and M. Nakayama.

The 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 2000.  2000 

Initial phase difference between coherent GaSb-like and AlSb-like LO phonons in GaSb/AlSb superlattices International conference

H. Takeuchi, K. Mizoguchi, M. Nakayama, K. Kuroyanagi, and T. Aida.

The 25th International Conference on the Physics of Semiconductors, September 18, 2000, Osaka International Convention Center, Osaka, Japan  2000 

Light-hole Stark-ladder photoluminescence induced by heavy-hole-light-hole resonance in a GaAs/InAlAs superlattice International conference

K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.

The 11th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, Kyoto, Japan, 1999.   1999 

Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field International conference

M. Ando, M. Nakayama, H. Takeuchi, H. Nishimura, N. Ohtani, N. Egami, M. Hosoda, and H. Mimura.

The 1999 Int. Conf. on Luminescence and Optical Spectroscopy of Condensed Matter, Osaka, Japan, 1999.   1999 

Light-hole Stark-ladder photoluminescence induced by hole injection from a remote heavy-hole state in a GaAs/InAlAs superlattice International conference

K. Kuroyanagi, N. Ohtani, N. Egami, K. Tomonaga, M. Hosoda, H. Takeuchi, and M. Nakayama.

The 26th Int. Symp. on Compound Semiconductors, Berlin, Germany, 1999.   1999 

Structural changes during photo-induced and thermal crystallization processes in evaporated amorphous GeSe2 films by Raman scattering International conference

Osamu Matsuda, Hideo Takeuchi, Yong Wang, Kohici Inoue, and KazuoF Murase.

The 7th Int. Conf. on the Structure of Non-Crystalline Materials, Chia Laguna, Sardenga, Italy,1997.  1997 

窒化物半導体の評価方法及び評価装置

竹内 日出雄, 山本 佳嗣

窒化物半導体の評価方法及び評価装置

竹内 日出雄, 山本 佳嗣

Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level

Hideo Takeuchi and Yoshitsugu Yamamoto

Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level

Hideo Takeuchi, Yoshitsugu Yamamoto

半導体層の検査方法および装置

竹内 日出雄, 山本 佳嗣

半導体層の検査方法および装置

竹内 日出雄, 山本 佳嗣

表面キャリア再結合速度の測定方法

竹内 日出雄, 山本 佳嗣

表面キャリア再結合速度の測定方法及び測定装置

竹内 日出雄, 山本 佳嗣

窒化物半導体装置およびその製造方法

竹内 日出雄, 山本 佳嗣

窒化物半導体装置およびその製造方法

竹内 日出雄, 山本 佳嗣

Method for evaluating piezoelectric fields

Hideo Takeuchi Yoshitsugu Yamamoto, and Takahide Ishikawa

Optical measuring method for semiconductor multiple layer structures and apparatus therefor

Hideo Takeuchi and Yoshitsugu Yamamoto

半導体装置

山本 佳嗣, 鈴木 敏, 竹内 日出雄

ピエゾ電場の評価方法

竹内 日出雄, 山本 佳嗣, 石川 高英

半導体多層膜の分光計測方法および分光計測装置

竹内 日出雄, 山本 佳嗣

半導体多層膜の分光計測方法および分光計測装置

竹内 日出雄, 山本 佳嗣

半導体装置

竹内 日出雄、山本 佳嗣

卒業研究

2023   Intensive lecture   Undergraduate

半導体工学Ⅰ

2023   Weekly class   Undergraduate

電子・物理工学実験Ⅰ

2023   Weekly class   Undergraduate

電子・物理工学関係外書講読

2023   Intensive lecture   Undergraduate

電子・物理工学概論

2023   Intensive lecture   Undergraduate

電子物理工学概論2

2023   Weekly class   Undergraduate

工業数学Ⅲ演習

2023   Intensive lecture   Undergraduate

電子・物理工学実験Ⅱ

2023   Weekly class   Undergraduate

特別演習（電子材料2）

2023   Weekly class   Graduate school

電子物理系特別研究第2（電子材料）

2023   Intensive lecture   Graduate school

電子物理系特別演習第2（電子材料）

2023   Intensive lecture   Graduate school

光物性工学特論

2022   Weekly class   Graduate school

技術と環境/杉本［全］S

2022   Weekly class   Graduate school

前期特別研究(電子情報系)

2022   Intensive lecture   Graduate school

特別演習（光物性工学）

2022   Intensive lecture   Graduate school

後期特別研究(電子情報系)

2022   Intensive lecture   Graduate school

ゼミナール(電子情報系)

2022   Intensive lecture   Graduate school

卒業研究(電子/物理工学科)

2022   Intensive lecture   Undergraduate

Physics of Semiconductor Devices I

2021   Weekly class   Undergraduate

特別演習(電子・物理工学I)

2020     Graduate school

電子・物理工学概論

2020     Undergraduate

卒業研究

2020     Undergraduate

特別演習（光物性工学I)

2020     Graduate school

外書講読

2020     Undergraduate

電子・物理工学実験II

2020     Undergraduate

量子エレクトロニクス

2020     Undergraduate

工業数学III演習

2020     Undergraduate

特別演習（光物性工学II)

2020     Graduate school

工業数学III演習

2019     Undergraduate

量子エレクトロニクス

2019     Undergraduate

電子・物理工学実験II

2019     Undergraduate

外書講読

2019     Undergraduate

卒業研究

2019     Undergraduate

電子・物理工学概論

2019     Undergraduate

技術と環境

2019     Undergraduate

特別演習(電子・物理工学I)

2019     Graduate school

光物性工学特論

2019     Graduate school

特別演習（光物性工学I)

2019     Graduate school

特別演習（光物性工学II)

2019     Graduate school

Special Exercise(Applied Physics I)

2018     Graduate school

Special Exercise(Optical Properties and Functions of Materials II)

2018     Graduate school

Special Exercise(Optical Properties and Functions of Materials I)

2018     Graduate school

Advanced Lecture on Optical Properties and Functions of Materials

2018     Graduate school

Fundamentals of Quantum Electronics

2018     Undergraduate

Applied Physics & Electrical Engineering Experiments II

2018     Undergraduate

外書購読

2018     Undergraduate

卒業研究

2018     Undergraduate

Introduction to Applied Physics and Electronics

2018     Undergraduate

Seminar in Industrial Mathematics III

2018     Undergraduate

工業数学III演習

2017     Undergraduate

量子エレクトロニクス

2017     Undergraduate

電子・物理工学実験II

2017     Undergraduate

外書講読

2017     Undergraduate

卒業研究

2017     Undergraduate

電子・物理工学概論

2017     Undergraduate

光物性工学特論

2017     Graduate school

特別演習（光物性工学II)

2017     Graduate school

特別演習（光物性工学I)

2017     Graduate school

技術と環境

2016     Undergraduate

電子システム工学実験IV

Institution：The University of Shiga Prefecture

電子システム工学演習III

Institution：The University of Shiga Prefecture

半導体デバイス工学

Institution：The University of Shiga Prefecture

電子システム工学実験II

Institution：The University of Shiga Prefecture

電子システム工学実験I

Institution：The University of Shiga Prefecture

物性デバイス基礎論

Institution：The University of Shiga Prefecture

科学技術英語

Institution：The University of Shiga Prefecture

物理学実験

Institution：The University of Shiga Prefecture

人間探求学

Institution：The University of Shiga Prefecture

卒業研究

Institution：The University of Shiga Prefecture

半導体デバイス工学

光物性特論

光物性工学特論

光エレクトロニクス

人間探求学

電子物理工学概論

電子・物理工学実験II

電子システム工学特論

電子システム工学特別演習

電子システム工学演習III

電子システム工学実験IV

電子システム工学実験II

電子システム工学実験I

量子エレクトロニクス

科学技術英語

特別演習 (光物性工学Ⅱ)

物理学実験

Institution：Osaka Institute of Technology

物理学実験

物性デバイス基礎論

技術と環境

Institution：Osaka City University

工業数学III演習

大学院特別演習(電子・物理工学I)

外書購読

新課程(高等学校学習指導要領改訂)に関する講演会  2022

「大学院生のためのキャリアパス支援説明会」（兼リーディングプログラム説明会）  2021

第30回FDワークショップ「ヤングケアラー・若者ケアラー問題を考える ―家族・親族の介護・看護を担う学生への支援―」  2021

第29回教育改革シンポジウム・第19回FD研究会  2021

FD活動への貢献  2018

FD活動への貢献  2018

2018

2018

2018

2018

2017