企画委員   日本表面科学会  

2013.04 - 2015.03 

組織委員   電子物質国際会議 2012 光支援合成とプロセスシンポジウム  

2012 

平成23年度戦力的技術支援事業　事後評価委員   近畿経済産業局  

2011.11 - 2012.03 

科学研究費委員会専門委員（書面審査委員）   日本学術振興会  

2009.10 - 2011.02 

委員   日本表面科学会関西支部  

2009.04 - 2017.03 

実行委員会副委員長   真空・表面科学会合同学術講演会　  

2009.04 - 2010.03 

幹事   応用物理学会ナノプロセス研究会  

2008.04 - 2020.03 

実行委員   電子遷移誘起脱離に関する国際ワークショップ  

2004 

組織委員   電子励起による原子分子操作に関する国際シンポジウム  

2002 

実行委員   第7回絶縁体における照射効果に関する国際会議  

1993 

大阪大学   産業科学研究所   准教授

2009.04 - 2019.03

東京大学物性研究所   ナノスケール物性研究部門   客員准教授

2015.04 - 2015.09

名古屋大学大学院   工学研究科応用物理学専攻   非常勤講師

2005.04 - 2006.03

Ultrafast relaxation dynamics of highly excited hot electrons in silicon Reviewed International coauthorship

H. Tanimura, J. Kanasaki, K. Tanimura, J. Sjakste, N. Vast

Physical Review B   100 ( 3 )   035201-1 - 035201-13   2019.07

Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence Reviewed International coauthorship

J. Sjakste, N. Vast, G. Barbarino, M. Calandra, F. Mauri, J. Kanasaki, H. Tanimura, and K. Tanimura

Physical Review B   97 ( 6 )   064302-1 - 064302-9   2018.02

Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions Reviewed International coauthorship

J. Kanasaki, H. Tanimura, K. Tanimura, P. Ries, W. Heckel, K. Biedermann, T. Fauster

Physical Review B   97 ( 3 )   035201-1 - 035201-6   2018.01

Electronic structure of surface unoccupied band of Ge(001)-c(4x2): Direct imaging of surface electron relaxation pathways Reviewed

J. Kanasaki, I. Yamamoto, J. Azuma, and S. Fukatsu

Physical Review B   96 ( 11 )   115301-1 - 115301-7   2017.11

Comparison of electronic-excitation-induced structural modification of carbon-based nanomaterials with that of semiconductor surfaces Reviewed

N. Itoh, C. Itoh, J. Kanasaki

NANO   11 ( 6 )   1630001-1 - 1630001-17   2016.06

Formation of hot-electron ensembles quasi-equilibrated in momentum space by ultrafast momentum scattering of highly excited hot electrons photoinjected into Г-valley of GaAs Reviewed

H. Tanimura, J. Kanasaki, K. Tanimura, J. Sjakste, N. Vast, M. Calandra, F. Mauri

Physical Review B   93 ( 16 )   161203(R)-1 - 161203(R)-5   2016.04

Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy Reviewed

H. Tanimura, J. Kanasaki, K. Tanimura

Physical Review B   91 ( 4 )   045201-1 - 045201-16   2015.01

フェムト秒時間分解光電子分光法を用いた半導体における励起電子超高速緩和ダイナミクスの研究 Reviewed

金﨑順一,谷村洋,谷村克己

固体物理   50 ( 10 )   519 - 530   2015

Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy Reviewed

H. Tanimura, J. Kanasaki and K. Tanimura

Physical Review B   91 ( 4 )   045201-1 - 16   2015

Imaging energy- and momentum-, and time-resolved distributions of photoinjected hot electrons in GaAs Reviewed

J. Kanasaki, H. Tanimura, K. Tanimura

Physical Review Letters   113 ( 23 )   237401-1 - 237401-4   2014.12

State-resolved ultrafast dynamics of impact ionization in InSb Reviewed

H. Tanimura, J. Kanasaki, K. Tanimura

Scientific Reports   4   6849-1 - 6849-4   2014.11

Crucial Roles of Holes in Electronic Bond Rupture on Semiconductor Surfaces Reviewed

J. Tsuruta, E. Inami, J. Kanasaki, K. Tanimura

Surface Science   626   49 - 52   2014.08

The role of applied bias and tip electronic structure in the scanning tunneling microscopy imaging of highly oriented pyrolytic graphite Reviewed

G. Teobaldi, E. Inami, J. Kanasaki, K. Tanimura, A. L. Shluger,

Physical Review B   85 ( 8 )   085423-1 - 085423-15   2012.04

Ultrafast relaxation of highly excited hot electrons in Si: Roles of the L-X intervalley scattering Reviewed

T. Ichibayashi, S. Tanaka, J. Kanasaki, and K. Tanimura, T. Fauster

Physical Review B   84 ( 23 )   235210-1 - 235210-11   2011.12

Scanning tunneling microscopic studies of laser-induced modifications of Si(001)-(2x1) surface Reviewed

Yasui Kosuke, Kanasaki Jun'ichi

Journal of Applied Physics   110 ( 10 )   2011.11（ ISSN:0021-8979 ）

Intact-sheet double-layer ablation induced by femtosecond-laser excitation of graphite Reviewed

H. Ohnishi, E. Inami, J. Kanasaki

Surface Science   605 ( 15-16 )   1497 - 1502   2011.05

Ultrafast relaxation of highly excited hot electrons in Si: Roles of the L-X intervalley scattering Reviewed International coauthorship

T. Ichibayashi, S. Tanaka, J. Kanasaki, and K. Tanimura, T. Fauster

Physical Review B   84 ( 23 )   235210-1 - 11   2011

Formation of sp3-bonded carbon nanostructures by femtosecond laser excitation of graphite Reviewed

J. Kanasaki, E. Inami, K. Tanimura, H. Onishi, K. Nasu

Physical Review Letters   102 ( 8 )   087402-1 - 087402-4   2009.02

Excitation-induced atomic desorption and structural instability of III-V compound semiconductor surfaces Reviewed

K. Tanimura and J. Kanasaki

Surface Science   602 ( 20 )   3162 - 3171   2008.10

Scanning tunneling microscopy study on hydrogen removal from Si(001)-2x1:H surface excited with low-energy electron beams Reviewed

J. Kanasaki, K. Ichihashi, K. Tanimura

Surface Science   602 ( 7 )   1322 - 1327   2008.04

Fermi-level dependent morphology in photo-induced bond breaking on (110) surfaces of III-V semiconductors Reviewed

J. Kanasaki, E. Inami, K. Tanimura

Surface Science   601 ( 11 )   2367 - 2372   2007.06

Two-hole localization mechanism for electronic bond rupture of surface atoms by laser-induced valence excitation of semiconductors Reviewed

K. Tanimura, E. Inami, J. Kanasaki, W. Hess

Physical Review B   74 ( 3 )   035337-1 - 035337-8   2006.07

Excitation-induced structural instability of semiconductor surfaces Reviewed

K. Tanimura and J. Kanasaki

Journal of Physics: Condensed Matter   18 ( 30 )   1479 - 1516   2006.07

Laser-induced desorption from semiconductor surfaces and its electronic mechanism Invited Reviewed

J. Kanasaki, K. Tanimura

Journal of the Vacuum Society of Japan   49   581 - 587   2006

Formation and clustering of surface vacancies under electronic excitation on semiconductor surfaces Reviewed

J. Kanasaki

Physica B   376-377   834 - 840   2006

Excitation-induced structural instability of semiconductor surfaces Reviewed

K. Tanimura, J. Kanasaki

Journal of Physics: Condensed Matter   18 ( 30 )   1479 - 1516   2006

Two-hole localization mechanism for electronic bond rupture of surface atoms by laser-induced valence excitation of semiconductors Reviewed International coauthorship

K. Tanimura, E. Inami, J. Kanasaki, W. Hess

Physical Review B   74 ( 3 )   035337-1 - 8   2006

Structural instability of Si(111)-(7x7) induced by low energy electron irradiation Reviewed

Y. Sugita, H. Horiike, J. Kanasaki, K. Tanimura

Surface Science   593 ( 1-3 )   168 - 172   2005.11

レーザー励起による半導体表面構造の不安定性 Invited Reviewed

金﨑順一, 谷村克己

表面科学   26   675 - 680   2005

Photoinduced structural instability of the InP(110)-(1x1) surface Reviewed

T. Gotoh, S. Kotake, K. Ishikawa, J. Kanasaki, K. Tanimura

Physical Review Letters   93 ( 11 )   117401-1 - 4   2004

Electronic bond rupture of Si-dimers on the Si(001)-(2x1) Reviewed

J. Kanasaki, K. Katoh, Y. Imanishi

Applied Physics A   6   865 - 868   2004

レーザービームによる半導体表面原子結合の局所的切断 Invited Reviewed

金﨑順一, 谷村克己

応用物理   73   485 - 489   2004

Electronic bond rupture of Si atoms on Si(111)-(2x1) induced by 1-eV photon excitation Reviewed

E. Inami, J. Kanasaki, K. Tanimura

Surface Science   528 ( 1-3 )   115 - 120   2003

Laser-induced electronic bond breaking and desorption on Si(001) surface Reviewed

J. Kanasaki, K. Tanimura

Surface Science   528 ( 1-3 )   127 - 131   2003

Laser-induced electronic bond breaking on semiconductor surfaces

J. Kanasaki

Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitation (ISMAMEE)   30 - 33   2002

Primary processes of laser-induced selective dimer-layer removal on Si(001)-(2x1) Reviewed

J. Kanasaki, K. Ishikawa, M. Nakamura, K. Tanimura

Physical Review Letters   89 ( 25 )   257601-1 - 4   2002

Laser-induced new phase formation and desorption of Si atoms from

J. Kanasaki, K. Tanimura

SPIE   4636   48 - 58   2002

Laser-induced electronic instability on semiconductor surfaces of Si (111)-(7x7) and InP (110)-(1x1) Reviewed

K. Tanimura, J. Kanasaki, K. Ishikawa

Springer Proceedings in Physic   87   325 - 326   2001

Laser-induced electronic desorption from InP(110) surfaces studied by the femtosecond non-resonant ionization spectroscopy Reviewed

J. Kanasaki, N. Mikasa, K. Tanimura

Physical Review B   64 ( 3 )   035414-1 - 10   2001

Laser-induced electronic bond breaking and structural changes on semiconductor surfaces Reviewed

K. Tanimura, J. Kanasaki

SPIE   3618   26 - 36   1999

Laser-induced desorption from STM-selected semiconductor sites Reviewed International coauthorship

N. Itoh, J. Kanasaki, J. Xu

Progress in Surface Science   61 ( 1 )   1 - 19   1999

Translational energy distribution of Si atoms desorbed by laser-induced electronic bond breaking of adatoms on Si(111)-(7x7) Reviewed

J. Kanasaki, K. Iwata, K. Tanimura

Physical Review Letters   82 ( 3 )   644 - 647   1999

Laser-induced bond breaking and structural changes on Si(111)7x7 surfaces Reviewed

K. Tanimura, J. Kanasaki

Applied Surface Science   127-129   33 - 39   1998

Laser-induced electronic bond breaking and desorption of Si adatoms from the Si(111)-7x7 surface Reviewed

J. Kanasaki, T. Ishida, K. Ishikawa, K. Tanimura

Physical Review Letters   80 ( 18 )   4080 - 4083   1998

Laser-induced emission of atoms and electrons from deposited Si atoms on the Si(100)2x1 surface Reviewed International coauthorship

In-Keun Yu, J. Kanasaki, Y. Nakai, N. Itoh, K-Y. Kang

Journal of Korean Physical Society   33 ( 1 )   91 - 94   1998

Low energy laser photoelectron study of defect states on cleaved Si(111)2x1 surface Reviewed International coauthorship

M. Yamada, J. Kanasaki, N. Itoh, R. T. Williams

Surface Science   349 ( 1 )   L107 - L110   1996

レーザービームと非金属固体表面との相互作用 Reviewed

伊藤憲昭，金崎順一，岡野晃子，中井靖男

応用物理   64   536 - 546   1995

The DIET from semiconductor surfaces Reviewed

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, N. Itoh

Nuclear Instruments and Methods in Physics Research B   101 ( 1-2 )   93 - 102   1995

Site-selective manipulation of semiconductor surfaces by laser beams Reviewed

N. Itoh, A. Okano, J. Kanasaki, Y. Nakai

Optoelectronics -Devices and Technologies   10 ( 2 )   247 - 258   1995

Laser beam interaction with defects on semiconductor surfaces: an approach to production of defect-free surfaces Invited Reviewed

N. Itoh, J. Kanasaki, A. Okano, Y. Nakai

Annual Review of Material Science   25   92 - 127   1995

Energies for atomic emissions from defect sites on the Si surfaces: the effects of halogen adsorbates Reviewed International coauthorship

G. S. Khoo, C. K. Ong, N. Itoh, J. Kanasaki

Journal of Applied Physics   75 ( 1 )   255 - 258   1994

Defect excitation processes involved in laser-induced atomic emission and laser ablation of non-metallic solids Reviewed International coauthorship

J. Singh, N. Itoh, Y. Nakai, J. Kanasaki, A. Okano

Physical Review B   50 ( 16 )   11730 - 11737   1994

Defect-initiated atomic emissions from semiconductor surfaces induced by laser irradiation: electronic cleaning of defects on surfaces Reviewed

J. Kanasaki, A. Okano, Y. Nakai, N. Itoh,

Applied Surface Science   81   100 - 103   1994

Enhancement of emissions of Si atoms from the Si(100) surface by low-rate Br exposure: a new model of dry etching based on defect-adsorbate interaction Reviewed

J. Kanasaki, I. K. Yu, Y. Nakai, and N. Itoh

Japanese Journal of Applies Physics   33 ( 4B )   2255 - 2257   1994

Electronic processes in laser-induced Gao emission and laser ablation of the GaP(110) and GaAs(110) surfaces Reviewed

A. Okano, J. Kanasaki, Y. Nakai, N. Itoh

Journal of Physics: Condensed Matter   6 ( 14 )   2697 - 2712   1994

Emission of Na atoms from undamaged and slightly damaged NaCl(100) surfaces by electronic excitation Reviewed

T. Kubo, A. Okano, J. Kanasaki, K. Ishikawa, Y. Nakai, and N. Itoh

Physical Review B   49 ( 7 )   4931 - 4937   1994

Laser-induced electronic processes on semiconductor surfaces Invited Reviewed

N. Itoh, Y. Nakai, K. Hattori, A. Okano, J. Kanasaki

Desorption Induced by Electronic Transitions DIET V   223 - 235   1993

Defect-initiated emission of Ga atoms from the GaAs(110) surface induced by pulsed laser irradiation Reviewed

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, N. Itoh

Journal of Physics: Condensed Matter   5 ( 36 )   6497 - 6506   1993

acancy-initiated laser sputtering from semiconductor surfaces Reviewed

N. Itoh, A. Okano, K. Hattori, J. Kanasaki, Y. Nakai

Nuclear Instruments and Methods in Physics Research B   82 ( 2 )   310 - 316   1993

Enhancement of laser-induced defect-initiated Gao emission from GaAs(110) surfaces by Br adsorption Reviewed International coauthorship

J. Kanasaki, A. Y. Matsuura, Y. Nakai, N. Itoh, R. F. Haglund, Jr.

Applied Physics Letters   62 ( 26 )   3493 - 3495   1993

Laser-induced electronic emissions of Si atoms from Si(100) surfaces Reviewed

J. Kanasaki, I. K. Yu, Y. Nakai, N. Itoh

Japanese Journal of Applies Physics   32 ( 6B )   L859 - L862   1993

Dynamical interaction of surface electron-hole pairs with surface defects: surface spectroscopy monitored by particle emission Reviewed

J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, N. Itoh

Physical Review Letters   70 ( 16 )   2495 - 2498   1993

Defect-initiated particle emission from semiconductor surfaces by laser irradiation Reviewed

Y. Nakai, K. Hattori, A. Okano, T. Taguchi, J. Kanasaki, N. Itoh

Surface Science   283 ( 1-3 )   169 - 176   1993

Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: basis for a new technique of generating perfect surfaces Reviewed International coauthorship

N. Itoh, K. Hattori, Y. Nakai, J. Kanasaki, A. Okano, C. K. Ong, G. S. Khoo

Applied Physics Letters   60 ( 26 )   3271 - 3273   1992

Laser-induced particle emission from surfaces of non-metallic solids: a search for primary processes of laser ablation Reviewed International coauthorship

N. Itoh, K. Hattori, Y. Nakai, J. Kanasaki, A. Okano, R. F. Haglund, Jr.

Laser Ablation, Mechanisms and Applications   213 - 223   1991

Effects of oxygen adsorption on laser-induced sputtering from GaP(110) surfaces Reviewed International coauthorship

J. Kanasaki, H. Yamashita, A. Okano, K. Hattori, Y. Nakai, N. Itoh, R. F. Haglund, Jr.

Surface Science   257 ( 1-3 )   L642 - L646   1991

High-resolution analysis of protons scattered from solid surfaces Reviewed

N. Matsunami, K. Kitoh, J. Kanasaki, N. Itoh

Nuclear Instruments and Methods in Physics Research B   45 ( 1-4 )   412 - 415   1990

表面解析用高分解能陽子エネルギー損失分光装置 Invited Reviewed

伊藤憲昭, 金﨑順一, 松波紀明, 松田耕自, 青木正彦

加速器科学   2 ( 4 )   73 - 83   1988

Surface analysis by means of high resolution energy loss spectroscopy of 180゜elastic scattered protons in the 100 keV regime Reviewed

J. Kanasaki, N. Matsunami, N. Itoh, T. Oku, K. Kitoh, M. Aoki, K. Matsuda

Nuclear Instruments and Methods in Physics Research B   33 ( 1-4 )   619 - 621   1988

Analysis of initial stage of Pd-Si(111) and Au-Si(111) interface reactions by means of high resolution proton energy loss spectroscopy Reviewed

J. Kanasaki, N. Itoh, N. Matsunami

Applied Physics Letters   51 ( 14 )   1072 - 1075   1987

Proton energy loss spectroscopy for surface layer analysis in the monolayer regime Reviewed

T. Oku, J. Kanasaki, N. Matsunami, N. Itoh, M. Aoki, K. Matsuda

Nuclear Instruments and Methods in Physics Research B   15 ( 1-6 )   142 - 145   1986

Ultrafast Carrier Dynamics in Photo-Excited Optoelectronic Semiconductors Invited International conference

J. Kanasaki

The 2017 EMN Meeting on Optoelectronics 2017  2017.04 

Momentum Space View of Ultrafast Carrier Dynamics in Photo-Excited Semiconductors Invited International conference

J. Kanasaki

The 3rd Annual World Congress of Smart Materials 2017  2017.03 

Direct Imaging of Surface Electron Relaxation and Surface Conduction Band Structures of Ge(001) and (111) Surfaces International conference

J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

Symposium on Surface Science & Nanotechnology 2017  2017.01 

Band Structure and Electronic Dynamics at Ge(001) and (111) Surfaces International conference

J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

The 20th SANKEN International, The 15th SANKEN Nanotechnology Symposium  2016.12 

Electronic Structure of Surface Conduction Band of Ge(001)-c(4x2) and Ge(111)-c(2x8) Surfaces Studied by Two-photon Photoelectron Spectroscopy International conference

J. Kanasaki, I. Yamamoto, J. Azuma

Atomically-Controlled Surfaces, Interfaces & Nanotechnology (ACSIN) 2016  2016.10 

19pBH-4 Ultrafast non-radiative capture of hot electrons in the conduction band by surface point defects on GaAs(110)

Tanimura K., Kanasaki J., Tanimura H.

Meeting Abstracts of the Physical Society of Japan  2016  The Physical Society of Japan (JPS)

State-resolved ultrafast dynamics of impact ionization in InSb studied by time- and angle-resolved photoemission spectroscopy International conference

H. Tanimura, J. Kanasaki, and K. Tanimura

9th International Symposium on Ultrafast Surface Dynamics (USD-9)  2015.05 

24aAS-11 Baulk-to-surface scattering of photoexcited carriers in semiconductors: Ge(111)-c(2x8)

Kanasaki J., Tanimura K.

Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

Ultrafast Electron Dynamics on Photo-Excited Ge(111)-c(2x8)

Jun'ichi Kanasaki

Abstract of annual meeting of the Surface Science of Japan  2015  The Surface Science Society of Japan

24aCP-12 Ultrafast momentum relaxation followed by energy relaxation of photoinjected hot electrons in semiconductors II

Tanimura K., Tanimura H., Kanasaki J., Sjakste J., Vast N.

Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

24aCP-11 Time-resolved photoemission spectroscopy for impact ionization in narrow-gap semiconductor

Tanimura H., Kanasaki J., Tanimura K.

Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

7aAJ-2 Ultrafast dynamics of Non-equilibrium Electrons in Photo-excited Germanium

Kanasaki J., Tanimura H., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2014.08  The Physical Society of Japan (JPS)

7pAJ-6 Impact ionization in InSb studied by time-resolved photoemission spectroscopy

Tanimura H., Kanasaki J., Tanimur K.

Meeting abstracts of the Physical Society of Japan  2014.08  The Physical Society of Japan (JPS)

Ultrafast electron dynamics in photo-excited semiconductors studied by time- and angle-resolved two-photon photoelectron spectroscopy Invited International conference

J. Kanasaki

The 24th Conference on Lasers and Electro-Optics (CLEO-2014)  2014.06 

27pCK-4 Ultrafast relaxation process of highly excited electron in semiconductor II

Tanimura H., Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2014.03  The Physical Society of Japan (JPS)

27pCK-6 Ultrafast Intervalley Scattering of Hot Electrons in GaAs

Tanimura K., Tanimura H., Kanasaki J.

Meeting abstracts of the Physical Society of Japan  2014.03  The Physical Society of Japan (JPS)

27pCK-5 Ultrafast dynamics of photo-generated carriers in semiconductors studied by femtosecond time-resolved photoelectron spectroscopy : excitation density dependence of energy relaxation rate

Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2014.03  The Physical Society of Japan (JPS)

Ultrafast electron dynamics in photo-excited GaAs studied by time- and angle-resolved two photon photoelectron spectroscopy International conference

J. Kanasaki and K. Tanimura

2013 JSAP & Material Research Society (MRS) Joint Symposium  2013.09 

Ultrafast relaxation process of highly excited electron in semiconductor

Tanimura H., Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2013.08  The Physical Society of Japan (JPS)

Imaging energy- and momentum-resolved distributions of photoinjected hot electrons in GaAs International conference

J. Kanasaki and K. Tanimura

8th Conference on Ultrafast Surface Dynamics  2013.05 

Ultrafast Relaxation of Highly Excited Hot Electrons in Semiconductors International conference

H. Tanimura, J. Kanasaki, and K. Tanimura

8th Conference on Ultrafast Surface Dynamics  2013.05 

Scanning tunneling microscopy study of photoinduced structural phase transition of graphoite International conference

E. Inami, J. Kanasaki, and K. Tanimura

20th International Colloquium on Scanning Probe Microscopy (ICSPM20)   2012.12 

Laser-Induced Bond Rupture and Structural Modifications of Si(001)-(2x1) Surface International conference

J. Kanasaki and K. Yasui

International Union of Material Research Society & International Conference on Electronic Materials  2012.09 

The Surface Bond Rupture on InP(110)-(1x1) Induced by Hole Injection from the STM Tips International conference

J. Kanasaki, J. Tsuruta, E. Inami, K. Tanimura

International Union of Material Research Society & International Conference on Electronic Materials  2012.09 

Photo-induced structural instability driven by intrinsic carrier localization on covalent semiconductor surfaces Invited International conference

J. Kanasaki

13th International Workshop on Desorption and Dynamics Induced by Electronic Transitions (DIET XIII)  2012.04 

Fs-Laser Induced Exfoliation of Intact Graphene Double-Layers from Graphite International conference

J. Kanasaki, H. Onishi, and E. Inami

International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-  2011.12 

Angle-Resolved Low-Energy Photoemission Study of Electronic Structure of Si(111)7x7 International conference

J. Kanasaki, K. Tanimura, and T. Fauster

International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-  2011.12 

Formation and Growth of Interlayer sp3-Bonded Carbon Nano-Domains Induced by Femtosecond Laser Excitation of Graphite International conference

E. Inami, J. Kanasaki, K. Tanimura

International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-  2011.12 

21aRB-1 Ultrafast dynamics of photo-injected holes in valence states of Si studied by femtosecond time-resolved photoelectron spectroscopy II

Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2011.08  The Physical Society of Japan (JPS)

23pTC-5 Structural phase transformation of graphite induced by femtosecond-laser excitation : pulse-width dependence

Inami E., Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2011.08  The Physical Society of Japan (JPS)

25aHC-11 Structural phase transformation of graphite induced by femtosecond-laser excitation : pulse-width dependence

Inami E., Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2011.03  The Physical Society of Japan (JPS)

28aHC-4 Ultrafast dynamics of photo-injected holes in valence states of Si studied by femtosecond time-resolved photoelectron spectroscopy

Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2011.03  The Physical Society of Japan (JPS)

23aRC-10 Structural phase transformation of graphite induced by femtosecond-laser excitation : excitation-wavelength dependence

Inami E., Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2010.08  The Physical Society of Japan (JPS)

23aWX-3 Hot-electron effects of bulk-to-surface electron transfer on Si(001)-(2x1)

Tanimura K., Kanasaki J.

Meeting abstracts of the Physical Society of Japan  2010.08  The Physical Society of Japan (JPS)

23aWX-2 Ultrafast relaxation of photo-injected holes in surface valence states on Si surfaces III

Kanasaki J., Tanimura K.

Meeting abstracts of the Physical Society of Japan  2010.08  The Physical Society of Japan (JPS)

極限時空間分光法の開発と光誘起構造相転移研究への応用

Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2016.04

物質構造科学の新展開 : フェムト秒時間分解原子イメージング

Grant-in-Aid for Specially Promoted Research  2012.04

フェムト秒時間分解光電子分光法による半導体価電子正孔系の超高速動力学

Grant-in-Aid for Scientific Research(C)  2011.04

光誘起構造相転移動力学の研究

Grant-in-Aid for Specially Promoted Research  2007.04

可視光励起によるグラファイト・ダイヤモンド構造相転移に関する研究

Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2007

低エネルギー電子線励起による半導体表面構造の不安定性

Grant-in-Aid for Scientific Research(C)  2005.04

半導体表面二次元凝縮相における励起物性の研究

Grant-in-Aid for Scientific Research(A)  2005.04

シリコン(001)表面における光誘起結合切断と新表面構造相の創製

Grant-in-Aid for Scientific Research(B)  2003.04

レーザー光による表面原子操作

Grant-in-Aid for Scientific Research on Priority Areas  1999.04

化合物半導体表面における光誘起構造変化

Grant-in-Aid for Scientific Research(C)  1999.04

電子勃起を用いた原子分子操作

Grant-in-Aid for Scientific Research on Priority Areas  1999.04

フェムト秒分光法による半導体再構成表面の光誘起原子過程の研究

Grant-in-Aid for Scientific Research(B)  1997.04

半導体表面における光誘起構造変化

Grant-in-Aid for Scientific Research(C)  1996.04

半導体表面における光化学エッチングの初期過程の研究

Grant-in-Aid for Encouragement of Scientists  1993.04

レーザー誘起原子放出を用いた表面微量欠陥の定量法の確立

一般研究B  1993.04

レーザー誘起原子放出によるシリコン表面欠陥制御

Grant-in-Aid for Encouragement of Scientists  1992.04

固体における電子励起誘起原子過程の研究

Grant-in-Aid for Specially Promoted Research  1987.04

材料物理学

2024   Weekly class   Undergraduate

機械システム演習

2024   Weekly class   Undergraduate

エネルギー機械演習

2024   Weekly class   Undergraduate

機械基礎実験

2024   Weekly class   Undergraduate

機械設計演習

2024   Weekly class   Undergraduate

機械工学概論

2024   Weekly class   Undergraduate

量子物性工学特論

2024   Weekly class   Graduate school

機械系特別研究第1

2024   Intensive lecture   Graduate school

機械系特別演習第1

2024   Intensive lecture   Graduate school

機械系特別演習

2024   Intensive lecture   Graduate school

設計製作実習

2024   Intensive lecture   Undergraduate

設計製作実習

2024   Intensive lecture   Undergraduate

Quantum Solid State Physics

2023     Graduate school

機械工学概論

2022     Undergraduate

機械工学基礎

2022     Undergraduate

初年次ゼミ

2022   Weekly class   Undergraduate

Quantum Solid State Physics

2022