Updated on 2024/03/27

写真a

 
KANASAKI Junichi
 
Organization
Graduate School of Engineering Division of Mechanical Engineering Professor
School of Engineering Department of Mechanical Engineering
Title
Professor
Affiliation
Institute of Engineering

Position

  • Graduate School of Engineering Division of Mechanical Engineering 

    Professor  2022.04 - Now

  • School of Engineering Department of Mechanical Engineering 

    Professor  2022.04 - Now

Degree

  • Doctor (Science) ( Nagoya University )

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

  • Nanotechnology/Materials / Nanostructural physics

Research Interests

  • 固体励起物性

  • 光誘起構造変化

  • 超高速緩和動力学

  • 光ナノ加工

Research subject summary

  • Development of advanced technologies controlling carrier and atomic dynamics by fully exploiting unique features of electronic excitation effects,

Research Career

  • 共有結合性擬2次元系における光誘起構造変化・相転移の機構解明

    光誘起構造変化・相転移 

    1987 - Now 

  • Ultrafast carrier dynamics in photoexcited semiconductors

    2009 - Now 

  • 光による原子分子操作 -超微細加工と新物質創成ー

    光超精密加工  Joint Research in Japan

    2018 - Now 

  • 光による極限時空間分光技術の開発

    2016 - Now 

  • 表面解析用イオン散乱分光装置の開発

    Joint Research in Organization

    1984 - 1990 

Professional Memberships

  • 日本物理学会

      Domestic

  • 応用物理学会

      Domestic

  • 日本表面真空学会

      Domestic

Committee Memberships (off-campus)

  • 特別研究員等審査会専門委員、卓越研究員候補者選考委員会書面審査員及び国際事業委員会書面審査会・書面評価員   独立行政法人日本学術振興会  

    2022.07 - 2023.06 

  • 科学研究費専門委員会 科研費書面審査員   日本学術振興会  

    2018.11 - 2021.10 

  • 組織委員、プログラム委員長   表面科学&ナノテクノロジーに関する国際シンポジウム  

    2017 

  • 副会長   応用物理学会 励起ナノプロセス研究会  

    2016.04 - 2020.03 

  • 実行委員   第9回超高速表面動力学に関する国際シンポジウム  

    2015 

  • 企画委員   日本表面科学会  

    2013.04 - 2015.03 

  • 組織委員   電子物質国際会議 2012 光支援合成とプロセスシンポジウム  

    2012 

  • 平成23年度戦力的技術支援事業 事後評価委員   近畿経済産業局  

    2011.11 - 2012.03 

  • 科学研究費委員会専門委員(書面審査委員)   日本学術振興会  

    2009.10 - 2011.02 

  • 委員   日本表面科学会関西支部  

    2009.04 - 2017.03 

  • 実行委員会副委員長   真空・表面科学会合同学術講演会   

    2009.04 - 2010.03 

  • 幹事   応用物理学会ナノプロセス研究会  

    2008.04 - 2020.03 

  • 実行委員   電子遷移誘起脱離に関する国際ワークショップ  

    2004 

  • 組織委員   電子励起による原子分子操作に関する国際シンポジウム  

    2002 

  • 実行委員   第7回絶縁体における照射効果に関する国際会議  

    1993 

▼display all

Job Career (off-campus)

  • 名古屋大学   理学部物理学科   助手

    1988.08 - 1999.09

  • 名古屋大学大学院   理学研究科物質理学専攻   助手

  • 大阪大学産業科学ナノテクノロジーセンター   客員助教授

    2004.04 - 2004.06

  • 大阪大学   産業科学研究所附属ナノテクノロジーセンター   助教授

    2004.09 - 2007.03

  • 大阪大学   産業科学研究所附属ナノテクノロジーセンター   准教授

    2007.04 - 2009.03

  • 大阪大学   産業科学研究所   准教授

    2009.04 - 2019.03

  • 東京大学物性研究所   ナノスケール物性研究部門   客員准教授

    2015.04 - 2015.09

  • 名古屋大学大学院   工学研究科応用物理学専攻   非常勤講師

    2005.04 - 2006.03

▼display all

Education

  • Nagoya University   Faculty of Science   Department of Physics   Doctor's Course   Unfinished Course

    1987.04 - 1988.07

  • Nagoya University   Master's Course   Graduated/Completed

    1985.04 - 1987.03

  • Nagoya University     Graduated/Completed

    1981.04 - 1985.03

Papers

  • Atomic-scale view of the photoinduced structural transition to form sp3-like bonded order phase in graphite Reviewed

    E. Inami, K. Nishioka, J. Kanasaki

    Nature Publishing・Scientific Reports   13   21439-1 - 9   2023.12

     More details

    Authorship:Last author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: https://doi.org/10.1038/s41598-023-47389-x

  • Optical film-thinning of graphene epitaxially grown on 4H-SiC(0001) : Robustness of monolayer-graphene against the photoexcitation Reviewed

    R. Horie, R. Hirosue, J. Kanasaki, K. Kisoda, I. Yamamoto, J. Azuma, K. Takahashi

    Institute of Physics・Journal of Physics: Condensed Matter   35 ( 19 )   195401-1 - 7   2023.03

     More details

    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: https://doi.org/10.1088/1361-648X/acbffc

  • Surface exciton formation on InP(110)-(1x1) studied by time- and angle-resolved photoemission spectroscopy Reviewed

    H. Tanimura, K. Tanimura, J. Kanasaki

    American Physical Society・Physical Review B   107   075304-1 - 10   2023.02

     More details

    Authorship:Last author   Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: https://doi.org/10.1103/PhysRevB.107.075304

    Repository URL: http://hdl.handle.net/10466/0002000052

  • Ultrafast relaxation of photoinjected nonthermal electrons at the nonthermal regime in the intra-G-valley relaxation in InP studied by time- and angle-resolved photoemission spectroscopy Reviewed

    K. Tanimura, H. Tanimura, J. Kanasaki

    American Physical Society・Physical Review B   106 ( 12 )   125204-1 - 16   2022.09

     More details

    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: 10.1103/PhysRevB.106.125204

    Repository URL: http://hdl.handle.net/10466/0002000051

  • Ultrafast relaxation of photoinjected nonthermal electrons in the G valley of GaAs studied by time- and angle-resolved photoemission spectroscopy Reviewed

    H. Tanimura, K. Tanimura, J. Kanasaki

    104 ( 24 )   245201-1 - 245201-16   2021.12

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

    DOI: 10.1103/PhysRevB.104.245201

  • Ultrafast relaxation dynamics of highly excited hot electrons in silicon Reviewed International coauthorship

    H. Tanimura, J. Kanasaki, K. Tanimura, J. Sjakste, N. Vast

    Physical Review B   100 ( 3 )   035201-1 - 035201-13   2019.07

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence Reviewed International coauthorship

    J. Sjakste, N. Vast, G. Barbarino, M. Calandra, F. Mauri, J. Kanasaki, H. Tanimura, and K. Tanimura

    Physical Review B   97 ( 6 )   064302-1 - 064302-9   2018.02

     More details

    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

  • Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions Reviewed International coauthorship

    J. Kanasaki, H. Tanimura, K. Tanimura, P. Ries, W. Heckel, K. Biedermann, T. Fauster

    Physical Review B   97 ( 3 )   035201-1 - 035201-6   2018.01

     More details

    Publishing type:Research paper (scientific journal)   International / domestic magazine:International journal  

    DOI: https://doi.org/10.1103/PhysRevB.97.035201

  • Electronic structure of surface unoccupied band of Ge(001)-c(4x2): Direct imaging of surface electron relaxation pathways Reviewed

    J. Kanasaki, I. Yamamoto, J. Azuma, and S. Fukatsu

    Physical Review B   96 ( 11 )   115301-1 - 115301-7   2017.11

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.96.115301

  • Comparison of electronic-excitation-induced structural modification of carbon-based nanomaterials with that of semiconductor surfaces Reviewed

    N. Itoh, C. Itoh, J. Kanasaki

    NANO   11 ( 6 )   1630001-1 - 1630001-17   2016.06

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1142/S1793292016300012

  • Formation of hot-electron ensembles quasi-equilibrated in momentum space by ultrafast momentum scattering of highly excited hot electrons photoinjected into Г-valley of GaAs Reviewed

    H. Tanimura, J. Kanasaki, K. Tanimura, J. Sjakste, N. Vast, M. Calandra, F. Mauri

    Physical Review B   93 ( 16 )   161203(R)-1 - 161203(R)-5   2016.04

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.93.161203

  • Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy Reviewed

    H. Tanimura, J. Kanasaki, K. Tanimura

    Physical Review B   91 ( 4 )   045201-1 - 045201-16   2015.01

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.91.045201

  • フェムト秒時間分解光電子分光法を用いた半導体における励起電子超高速緩和ダイナミクスの研究 Reviewed

    金﨑順一,谷村洋,谷村克己

    固体物理   50 ( 10 )   519 - 530   2015

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Ultrafast scattering processes of hot electrons in InSb studied by time- and angle-resolved photoemission spectroscopy Reviewed

    H. Tanimura, J. Kanasaki and K. Tanimura

    Physical Review B   91 ( 4 )   045201-1 - 16   2015

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Imaging energy- and momentum-, and time-resolved distributions of photoinjected hot electrons in GaAs Reviewed

    J. Kanasaki, H. Tanimura, K. Tanimura

    Physical Review Letters   113 ( 23 )   237401-1 - 237401-4   2014.12

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevLett.113.237401

  • State-resolved ultrafast dynamics of impact ionization in InSb Reviewed

    H. Tanimura, J. Kanasaki, K. Tanimura

    Scientific Reports   4   6849-1 - 6849-4   2014.11

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/srep06849

  • Crucial Roles of Holes in Electronic Bond Rupture on Semiconductor Surfaces Reviewed

    J. Tsuruta, E. Inami, J. Kanasaki, K. Tanimura

    Surface Science   626   49 - 52   2014.08

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2014.04.003

  • The role of applied bias and tip electronic structure in the scanning tunneling microscopy imaging of highly oriented pyrolytic graphite Reviewed

    G. Teobaldi, E. Inami, J. Kanasaki, K. Tanimura, A. L. Shluger,

    Physical Review B   85 ( 8 )   085423-1 - 085423-15   2012.04

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.85.085433

  • Ultrafast relaxation of highly excited hot electrons in Si: Roles of the L-X intervalley scattering Reviewed

    T. Ichibayashi, S. Tanaka, J. Kanasaki, and K. Tanimura, T. Fauster

    Physical Review B   84 ( 23 )   235210-1 - 235210-11   2011.12

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.84.235210

  • Scanning tunneling microscopic studies of laser-induced modifications of Si(001)-(2x1) surface Reviewed

    Yasui Kosuke, Kanasaki Jun'ichi

    Journal of Applied Physics   110 ( 10 )   2011.11( ISSN:0021-8979

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3662120

  • Intact-sheet double-layer ablation induced by femtosecond-laser excitation of graphite Reviewed

    H. Ohnishi, E. Inami, J. Kanasaki

    Surface Science   605 ( 15-16 )   1497 - 1502   2011.05

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2011.05.020

  • Ultrafast relaxation of highly excited hot electrons in Si: Roles of the L-X intervalley scattering Reviewed International coauthorship

    T. Ichibayashi, S. Tanaka, J. Kanasaki, and K. Tanimura, T. Fauster

    Physical Review B   84 ( 23 )   235210-1 - 11   2011

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Formation of sp3-bonded carbon nanostructures by femtosecond laser excitation of graphite Reviewed

    J. Kanasaki, E. Inami, K. Tanimura, H. Onishi, K. Nasu

    Physical Review Letters   102 ( 8 )   087402-1 - 087402-4   2009.02

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevLett.102.087402

  • Excitation-induced atomic desorption and structural instability of III-V compound semiconductor surfaces Reviewed

    K. Tanimura and J. Kanasaki

    Surface Science   602 ( 20 )   3162 - 3171   2008.10

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1016/j.susc.2007.11.032

  • Scanning tunneling microscopy study on hydrogen removal from Si(001)-2x1:H surface excited with low-energy electron beams Reviewed

    J. Kanasaki, K. Ichihashi, K. Tanimura

    Surface Science   602 ( 7 )   1322 - 1327   2008.04

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2007.12.046

  • Fermi-level dependent morphology in photo-induced bond breaking on (110) surfaces of III-V semiconductors Reviewed

    J. Kanasaki, E. Inami, K. Tanimura

    Surface Science   601 ( 11 )   2367 - 2372   2007.06

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2007.04.042

  • Two-hole localization mechanism for electronic bond rupture of surface atoms by laser-induced valence excitation of semiconductors Reviewed

    K. Tanimura, E. Inami, J. Kanasaki, W. Hess

    Physical Review B   74 ( 3 )   035337-1 - 035337-8   2006.07

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.74.035337

  • Excitation-induced structural instability of semiconductor surfaces Reviewed

    K. Tanimura and J. Kanasaki

    Journal of Physics: Condensed Matter   18 ( 30 )   1479 - 1516   2006.07

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1088/0953-8984/18/30/S07

  • Formation and clustering of surface vacancies under electronic excitation on semiconductor surfaces Reviewed

    J. Kanasaki

    Physica B   376-377   834 - 840   2006

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

    DOI: 10.1016/j.physb.2005.12.212

  • Excitation-induced structural instability of semiconductor surfaces Reviewed

    K. Tanimura, J. Kanasaki

    Journal of Physics: Condensed Matter   18 ( 30 )   1479 - 1516   2006

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Two-hole localization mechanism for electronic bond rupture of surface atoms by laser-induced valence excitation of semiconductors Reviewed International coauthorship

    K. Tanimura, E. Inami, J. Kanasaki, W. Hess

    Physical Review B   74 ( 3 )   035337-1 - 8   2006

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced desorption from semiconductor surfaces and its electronic mechanism Invited Reviewed

    J. Kanasaki, K. Tanimura

    Journal of the Vacuum Society of Japan   49   581 - 587   2006

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Structural instability of Si(111)-(7x7) induced by low energy electron irradiation Reviewed

    Y. Sugita, H. Horiike, J. Kanasaki, K. Tanimura

    Surface Science   593 ( 1-3 )   168 - 172   2005.11

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2005.06.089

  • レーザー励起による半導体表面構造の不安定性 Invited Reviewed

    金﨑順一, 谷村克己

    表面科学   26   675 - 680   2005

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Photoinduced structural instability of the InP(110)-(1x1) surface Reviewed

    T. Gotoh, S. Kotake, K. Ishikawa, J. Kanasaki, K. Tanimura

    Physical Review Letters   93 ( 11 )   117401-1 - 4   2004

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electronic bond rupture of Si-dimers on the Si(001)-(2x1) Reviewed

    J. Kanasaki, K. Katoh, Y. Imanishi

    Applied Physics A   6   865 - 868   2004

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • レーザービームによる半導体表面原子結合の局所的切断 Invited Reviewed

    金﨑順一, 谷村克己

    応用物理   73   485 - 489   2004

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Electronic bond rupture of Si atoms on Si(111)-(2x1) induced by 1-eV photon excitation Reviewed

    E. Inami, J. Kanasaki, K. Tanimura

    Surface Science   528 ( 1-3 )   115 - 120   2003

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced electronic bond breaking and desorption on Si(001) surface Reviewed

    J. Kanasaki, K. Tanimura

    Surface Science   528 ( 1-3 )   127 - 131   2003

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced electronic bond breaking on semiconductor surfaces

    J. Kanasaki

    Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitation (ISMAMEE)   30 - 33   2002

     More details

    Publishing type:Research paper (international conference proceedings)   Kind of work:Single Work  

  • Primary processes of laser-induced selective dimer-layer removal on Si(001)-(2x1) Reviewed

    J. Kanasaki, K. Ishikawa, M. Nakamura, K. Tanimura

    Physical Review Letters   89 ( 25 )   257601-1 - 4   2002

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced new phase formation and desorption of Si atoms from

    J. Kanasaki, K. Tanimura

    SPIE   4636   48 - 58   2002

     More details

    Publishing type:Research paper (international conference proceedings)   Kind of work:Joint Work  

  • Laser-induced electronic instability on semiconductor surfaces of Si (111)-(7x7) and InP (110)-(1x1) Reviewed

    K. Tanimura, J. Kanasaki, K. Ishikawa

    Springer Proceedings in Physic   87   325 - 326   2001

     More details

    Publishing type:Research paper (international conference proceedings)   Kind of work:Joint Work  

  • Laser-induced electronic desorption from InP(110) surfaces studied by the femtosecond non-resonant ionization spectroscopy Reviewed

    J. Kanasaki, N. Mikasa, K. Tanimura

    Physical Review B   64 ( 3 )   035414-1 - 10   2001

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced electronic bond breaking and structural changes on semiconductor surfaces Reviewed

    K. Tanimura, J. Kanasaki

    SPIE   3618   26 - 36   1999

     More details

    Publishing type:Research paper (international conference proceedings)   Kind of work:Single Work  

  • Laser-induced desorption from STM-selected semiconductor sites Reviewed International coauthorship

    N. Itoh, J. Kanasaki, J. Xu

    Progress in Surface Science   61 ( 1 )   1 - 19   1999

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Translational energy distribution of Si atoms desorbed by laser-induced electronic bond breaking of adatoms on Si(111)-(7x7) Reviewed

    J. Kanasaki, K. Iwata, K. Tanimura

    Physical Review Letters   82 ( 3 )   644 - 647   1999

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced bond breaking and structural changes on Si(111)7x7 surfaces Reviewed

    K. Tanimura, J. Kanasaki

    Applied Surface Science   127-129   33 - 39   1998

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced electronic bond breaking and desorption of Si adatoms from the Si(111)-7x7 surface Reviewed

    J. Kanasaki, T. Ishida, K. Ishikawa, K. Tanimura

    Physical Review Letters   80 ( 18 )   4080 - 4083   1998

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

  • Laser-induced emission of atoms and electrons from deposited Si atoms on the Si(100)2x1 surface Reviewed International coauthorship

    In-Keun Yu, J. Kanasaki, Y. Nakai, N. Itoh, K-Y. Kang

    Journal of Korean Physical Society   33 ( 1 )   91 - 94   1998

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Low energy laser photoelectron study of defect states on cleaved Si(111)2x1 surface Reviewed International coauthorship

    M. Yamada, J. Kanasaki, N. Itoh, R. T. Williams

    Surface Science   349 ( 1 )   L107 - L110   1996

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • レーザービームと非金属固体表面との相互作用 Reviewed

    伊藤憲昭,金崎順一,岡野晃子,中井靖男

    応用物理   64   536 - 546   1995

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • The DIET from semiconductor surfaces Reviewed

    J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, N. Itoh

    Nuclear Instruments and Methods in Physics Research B   101 ( 1-2 )   93 - 102   1995

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Site-selective manipulation of semiconductor surfaces by laser beams Reviewed

    N. Itoh, A. Okano, J. Kanasaki, Y. Nakai

    Optoelectronics -Devices and Technologies   10 ( 2 )   247 - 258   1995

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser beam interaction with defects on semiconductor surfaces: an approach to production of defect-free surfaces Invited Reviewed

    N. Itoh, J. Kanasaki, A. Okano, Y. Nakai

    Annual Review of Material Science   25   92 - 127   1995

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Energies for atomic emissions from defect sites on the Si surfaces: the effects of halogen adsorbates Reviewed International coauthorship

    G. S. Khoo, C. K. Ong, N. Itoh, J. Kanasaki

    Journal of Applied Physics   75 ( 1 )   255 - 258   1994

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Defect excitation processes involved in laser-induced atomic emission and laser ablation of non-metallic solids Reviewed International coauthorship

    J. Singh, N. Itoh, Y. Nakai, J. Kanasaki, A. Okano

    Physical Review B   50 ( 16 )   11730 - 11737   1994

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Defect-initiated atomic emissions from semiconductor surfaces induced by laser irradiation: electronic cleaning of defects on surfaces Reviewed

    J. Kanasaki, A. Okano, Y. Nakai, N. Itoh,

    Applied Surface Science   81   100 - 103   1994

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Enhancement of emissions of Si atoms from the Si(100) surface by low-rate Br exposure: a new model of dry etching based on defect-adsorbate interaction Reviewed

    J. Kanasaki, I. K. Yu, Y. Nakai, and N. Itoh

    Japanese Journal of Applies Physics   33 ( 4B )   2255 - 2257   1994

     More details

    Publishing type:Research paper (international conference proceedings)   Kind of work:Joint Work  

  • Electronic processes in laser-induced Gao emission and laser ablation of the GaP(110) and GaAs(110) surfaces Reviewed

    A. Okano, J. Kanasaki, Y. Nakai, N. Itoh

    Journal of Physics: Condensed Matter   6 ( 14 )   2697 - 2712   1994

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Emission of Na atoms from undamaged and slightly damaged NaCl(100) surfaces by electronic excitation Reviewed

    T. Kubo, A. Okano, J. Kanasaki, K. Ishikawa, Y. Nakai, and N. Itoh

    Physical Review B   49 ( 7 )   4931 - 4937   1994

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced electronic processes on semiconductor surfaces Invited Reviewed

    N. Itoh, Y. Nakai, K. Hattori, A. Okano, J. Kanasaki

    Desorption Induced by Electronic Transitions DIET V   223 - 235   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Defect-initiated emission of Ga atoms from the GaAs(110) surface induced by pulsed laser irradiation Reviewed

    J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, N. Itoh

    Journal of Physics: Condensed Matter   5 ( 36 )   6497 - 6506   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Single Work  

  • acancy-initiated laser sputtering from semiconductor surfaces Reviewed

    N. Itoh, A. Okano, K. Hattori, J. Kanasaki, Y. Nakai

    Nuclear Instruments and Methods in Physics Research B   82 ( 2 )   310 - 316   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Enhancement of laser-induced defect-initiated Gao emission from GaAs(110) surfaces by Br adsorption Reviewed International coauthorship

    J. Kanasaki, A. Y. Matsuura, Y. Nakai, N. Itoh, R. F. Haglund, Jr.

    Applied Physics Letters   62 ( 26 )   3493 - 3495   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced electronic emissions of Si atoms from Si(100) surfaces Reviewed

    J. Kanasaki, I. K. Yu, Y. Nakai, N. Itoh

    Japanese Journal of Applies Physics   32 ( 6B )   L859 - L862   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Dynamical interaction of surface electron-hole pairs with surface defects: surface spectroscopy monitored by particle emission Reviewed

    J. Kanasaki, A. Okano, K. Ishikawa, Y. Nakai, N. Itoh

    Physical Review Letters   70 ( 16 )   2495 - 2498   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Defect-initiated particle emission from semiconductor surfaces by laser irradiation Reviewed

    Y. Nakai, K. Hattori, A. Okano, T. Taguchi, J. Kanasaki, N. Itoh

    Surface Science   283 ( 1-3 )   169 - 176   1993

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: basis for a new technique of generating perfect surfaces Reviewed International coauthorship

    N. Itoh, K. Hattori, Y. Nakai, J. Kanasaki, A. Okano, C. K. Ong, G. S. Khoo

    Applied Physics Letters   60 ( 26 )   3271 - 3273   1992

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Laser-induced particle emission from surfaces of non-metallic solids: a search for primary processes of laser ablation Reviewed International coauthorship

    N. Itoh, K. Hattori, Y. Nakai, J. Kanasaki, A. Okano, R. F. Haglund, Jr.

    Laser Ablation, Mechanisms and Applications   213 - 223   1991

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Effects of oxygen adsorption on laser-induced sputtering from GaP(110) surfaces Reviewed International coauthorship

    J. Kanasaki, H. Yamashita, A. Okano, K. Hattori, Y. Nakai, N. Itoh, R. F. Haglund, Jr.

    Surface Science   257 ( 1-3 )   L642 - L646   1991

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • High-resolution analysis of protons scattered from solid surfaces Reviewed

    N. Matsunami, K. Kitoh, J. Kanasaki, N. Itoh

    Nuclear Instruments and Methods in Physics Research B   45 ( 1-4 )   412 - 415   1990

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • 表面解析用高分解能陽子エネルギー損失分光装置 Invited Reviewed

    伊藤憲昭, 金﨑順一, 松波紀明, 松田耕自, 青木正彦

    加速器科学   2 ( 4 )   73 - 83   1988

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Surface analysis by means of high resolution energy loss spectroscopy of 180゜elastic scattered protons in the 100 keV regime Reviewed

    J. Kanasaki, N. Matsunami, N. Itoh, T. Oku, K. Kitoh, M. Aoki, K. Matsuda

    Nuclear Instruments and Methods in Physics Research B   33 ( 1-4 )   619 - 621   1988

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Analysis of initial stage of Pd-Si(111) and Au-Si(111) interface reactions by means of high resolution proton energy loss spectroscopy Reviewed

    J. Kanasaki, N. Itoh, N. Matsunami

    Applied Physics Letters   51 ( 14 )   1072 - 1075   1987

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Proton energy loss spectroscopy for surface layer analysis in the monolayer regime Reviewed

    T. Oku, J. Kanasaki, N. Matsunami, N. Itoh, M. Aoki, K. Matsuda

    Nuclear Instruments and Methods in Physics Research B   15 ( 1-6 )   142 - 145   1986

     More details

    Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

▼display all

MISC

  • Photoinduced Structural Modifications of Few-Layer Graphene Epitaxially Grown on 4H-SiC(0001) International journal

    R. Horie, R. Hirosue, J. Kanasaki, I. Yamamoto, J. Azuma, K. Takahashi

    Synchrotron Light Application Center, Saga University・Activity Report   68-69   2022.03( ISSN:1883-1370

     More details

    Authorship:Corresponding author   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   International / domestic magazine:Domestic journal  

  • Ultrafast Dynamics of Photoinjected Holes in the Valence Band of Silicon Studied by Two-Photon Photoelectron Differential Spectroscopy International journal

    J. Kanasaki, I. Yamamoto, J. Azuma

    Synchrotron Light Application Center, Saga University/ Activity Report   48 - 49   2022.03( ISSN:1883-1370

     More details

    Authorship:Lead author   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   International / domestic magazine:Domestic journal  

  • Ultrafast Relaxation of Photoexcited Hot Electrons in Ge Due To Intervalley Scattering and Their Potentially Useful Properties Invited International journal

    Y. Yasutake, J. Kanasaki, S. Fukatsu

    IEICE Technical Report   122 ( 8 )   27 - 32   2022.04( ISSN:2432-6380

     More details

    Publishing type:Internal/External technical report, pre-print, etc.   International / domestic magazine:Domestic journal  

  • Ultrafast Dynamics of Photoinjected Holes in the Valence Bands of Silicon Studied by Two-Photon Photoelectron Differential Spectroscopy

    J. Kanasaki, I. Yamamoto, J. Azuma

    Active Report, Synchrotron Light Application Center   2020.03

     More details

    Authorship:Lead author   Publishing type:Internal/External technical report, pre-print, etc.  

  • Momentum Space View of Ultrafast Dynamics of Highly Energetic Electrons in Photo-Excited Germanium

    J. Kanasaki

    2018.03 ( ISSN:1883-1370

     More details

    Authorship:Lead author   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)  

Presentations

  • Precursor Processes of Photoinduced Graphite to Diaphite Phase Transition by Femtosecond Laser Excitation International conference

    E. Inami, K. Nishioka, J. Kanasaki

    The 31th International Colloquium on Scanning Probe Microscopy ICSPM31  2023.12 

     More details

    Presentation type:Poster presentation  

    Venue:Tokyo Institute of Technology, Tokyo  

  • Spectroscopic studies of laser-induced structural modifications of graphene layers epitaxially-grown on SiC(0001) International conference

    R. Horie, R. Hirosue, J. Kanasaki, K. Kisoda, I. Yamamoto, J. Azuma, K. Takahashi

    The 22nd International Vacuum Congress (IVC-22)   2022.09 

     More details

    Presentation type:Poster presentation  

    Venue:Sapporo Convention Center, Sapporo, Japan  

  • Raman spectroscopic studies of laser-induced structural change of epitaxial graphene layers on SiC(0001) International conference

    R. Horie, T. Yamana, J. Kanasaki, K. Kisoda, C. Itoh, K. Takahashi

    The 9th International Symposium on Surface Science (ISSS-9)  2021.11 

     More details

    Presentation type:Poster presentation  

  • Relevance of hidden Valleys in the Dequenching of Room-temperature-emitting Ge layers International conference

    T. Sakamoto, Y. Ysutake, J. Kanasaki, S. Fukatsu

    American Vacuum Society (AVS) 66th International Symposium & Exhibition  2019.10 

     More details

    Presentation type:Oral presentation (general)  

  • Optical Control of Structural Transformation to Form Nano-scaled Order Phases Including sp3-like Interlayer Bonds in Graphite International conference

    E. Inami, K. Nishioka, J. Kanasaki and K. Tanimura

    The 15th International Conference on Laser Ablation  2019.09 

     More details

    Presentation type:Poster presentation  

  • Ultrafast Carrier Dynamics in Photo-Excited Optoelectronic Semiconductors Invited International conference

    J. Kanasaki

    The 2017 EMN Meeting on Optoelectronics 2017  2017.04 

     More details

    Presentation type:Oral presentation (invited, special)  

  • Momentum Space View of Ultrafast Carrier Dynamics in Photo-Excited Semiconductors Invited International conference

    J. Kanasaki

    The 3rd Annual World Congress of Smart Materials 2017  2017.03 

     More details

    Presentation type:Oral presentation (invited, special)  

  • Direct Imaging of Surface Electron Relaxation and Surface Conduction Band Structures of Ge(001) and (111) Surfaces International conference

    J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

    Symposium on Surface Science & Nanotechnology 2017  2017.01 

     More details

    Presentation type:Poster presentation  

  • Band Structure and Electronic Dynamics at Ge(001) and (111) Surfaces International conference

    J. Kanasaki, I. Yamamoto, J. Azuma, S. Fukatsu

    The 20th SANKEN International, The 15th SANKEN Nanotechnology Symposium  2016.12 

     More details

    Presentation type:Poster presentation  

  • Electronic Structure of Surface Conduction Band of Ge(001)-c(4x2) and Ge(111)-c(2x8) Surfaces Studied by Two-photon Photoelectron Spectroscopy International conference

    J. Kanasaki, I. Yamamoto, J. Azuma

    Atomically-Controlled Surfaces, Interfaces & Nanotechnology (ACSIN) 2016  2016.10 

     More details

    Presentation type:Poster presentation  

  • 19pBH-4 Ultrafast non-radiative capture of hot electrons in the conduction band by surface point defects on GaAs(110)

    Tanimura K., Kanasaki J., Tanimura H.

    Meeting Abstracts of the Physical Society of Japan  2016  The Physical Society of Japan (JPS)

  • State-resolved ultrafast dynamics of impact ionization in InSb studied by time- and angle-resolved photoemission spectroscopy International conference

    H. Tanimura, J. Kanasaki, and K. Tanimura

    9th International Symposium on Ultrafast Surface Dynamics (USD-9)  2015.05 

     More details

    Presentation type:Oral presentation (general)  

  • 24aAS-11 Baulk-to-surface scattering of photoexcited carriers in semiconductors: Ge(111)-c(2x8)

    Kanasaki J., Tanimura K.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

  • Ultrafast Electron Dynamics on Photo-Excited Ge(111)-c(2x8)

    Jun'ichi Kanasaki

    Abstract of annual meeting of the Surface Science of Japan  2015  The Surface Science Society of Japan

  • 24aCP-12 Ultrafast momentum relaxation followed by energy relaxation of photoinjected hot electrons in semiconductors II

    Tanimura K., Tanimura H., Kanasaki J., Sjakste J., Vast N.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

  • 24aCP-11 Time-resolved photoemission spectroscopy for impact ionization in narrow-gap semiconductor

    Tanimura H., Kanasaki J., Tanimura K.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

  • 7aAJ-2 Ultrafast dynamics of Non-equilibrium Electrons in Photo-excited Germanium

    Kanasaki J., Tanimura H., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2014.08  The Physical Society of Japan (JPS)

  • 7pAJ-6 Impact ionization in InSb studied by time-resolved photoemission spectroscopy

    Tanimura H., Kanasaki J., Tanimur K.

    Meeting abstracts of the Physical Society of Japan  2014.08  The Physical Society of Japan (JPS)

  • Ultrafast electron dynamics in photo-excited semiconductors studied by time- and angle-resolved two-photon photoelectron spectroscopy Invited International conference

    J. Kanasaki

    The 24th Conference on Lasers and Electro-Optics (CLEO-2014)  2014.06 

     More details

    Presentation type:Oral presentation (invited, special)  

  • 27pCK-4 Ultrafast relaxation process of highly excited electron in semiconductor II

    Tanimura H., Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2014.03  The Physical Society of Japan (JPS)

  • 27pCK-6 Ultrafast Intervalley Scattering of Hot Electrons in GaAs

    Tanimura K., Tanimura H., Kanasaki J.

    Meeting abstracts of the Physical Society of Japan  2014.03  The Physical Society of Japan (JPS)

  • 27pCK-5 Ultrafast dynamics of photo-generated carriers in semiconductors studied by femtosecond time-resolved photoelectron spectroscopy : excitation density dependence of energy relaxation rate

    Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2014.03  The Physical Society of Japan (JPS)

  • Ultrafast electron dynamics in photo-excited GaAs studied by time- and angle-resolved two photon photoelectron spectroscopy International conference

    J. Kanasaki and K. Tanimura

    2013 JSAP & Material Research Society (MRS) Joint Symposium  2013.09 

     More details

    Presentation type:Oral presentation (general)  

  • Ultrafast relaxation process of highly excited electron in semiconductor

    Tanimura H., Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2013.08  The Physical Society of Japan (JPS)

  • Imaging energy- and momentum-resolved distributions of photoinjected hot electrons in GaAs International conference

    J. Kanasaki and K. Tanimura

    8th Conference on Ultrafast Surface Dynamics  2013.05 

     More details

    Presentation type:Oral presentation (general)  

  • Ultrafast Relaxation of Highly Excited Hot Electrons in Semiconductors International conference

    H. Tanimura, J. Kanasaki, and K. Tanimura

    8th Conference on Ultrafast Surface Dynamics  2013.05 

     More details

    Presentation type:Oral presentation (general)  

  • Scanning tunneling microscopy study of photoinduced structural phase transition of graphoite International conference

    E. Inami, J. Kanasaki, and K. Tanimura

    20th International Colloquium on Scanning Probe Microscopy (ICSPM20)   2012.12 

     More details

    Presentation type:Oral presentation (general)  

  • Laser-Induced Bond Rupture and Structural Modifications of Si(001)-(2x1) Surface International conference

    J. Kanasaki and K. Yasui

    International Union of Material Research Society & International Conference on Electronic Materials  2012.09 

     More details

    Presentation type:Oral presentation (invited, special)  

  • The Surface Bond Rupture on InP(110)-(1x1) Induced by Hole Injection from the STM Tips International conference

    J. Kanasaki, J. Tsuruta, E. Inami, K. Tanimura

    International Union of Material Research Society & International Conference on Electronic Materials  2012.09 

     More details

    Presentation type:Oral presentation (general)  

  • Photo-induced structural instability driven by intrinsic carrier localization on covalent semiconductor surfaces Invited International conference

    J. Kanasaki

    13th International Workshop on Desorption and Dynamics Induced by Electronic Transitions (DIET XIII)  2012.04 

     More details

    Presentation type:Oral presentation (invited, special)  

  • Fs-Laser Induced Exfoliation of Intact Graphene Double-Layers from Graphite International conference

    J. Kanasaki, H. Onishi, and E. Inami

    International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-  2011.12 

     More details

    Presentation type:Poster presentation  

  • Angle-Resolved Low-Energy Photoemission Study of Electronic Structure of Si(111)7x7 International conference

    J. Kanasaki, K. Tanimura, and T. Fauster

    International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-  2011.12 

     More details

    Presentation type:Poster presentation  

  • Formation and Growth of Interlayer sp3-Bonded Carbon Nano-Domains Induced by Femtosecond Laser Excitation of Graphite International conference

    E. Inami, J. Kanasaki, K. Tanimura

    International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-  2011.12 

     More details

    Presentation type:Poster presentation  

  • 21aRB-1 Ultrafast dynamics of photo-injected holes in valence states of Si studied by femtosecond time-resolved photoelectron spectroscopy II

    Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2011.08  The Physical Society of Japan (JPS)

  • 23pTC-5 Structural phase transformation of graphite induced by femtosecond-laser excitation : pulse-width dependence

    Inami E., Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2011.08  The Physical Society of Japan (JPS)

  • 25aHC-11 Structural phase transformation of graphite induced by femtosecond-laser excitation : pulse-width dependence

    Inami E., Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2011.03  The Physical Society of Japan (JPS)

  • 28aHC-4 Ultrafast dynamics of photo-injected holes in valence states of Si studied by femtosecond time-resolved photoelectron spectroscopy

    Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2011.03  The Physical Society of Japan (JPS)

  • 23aRC-10 Structural phase transformation of graphite induced by femtosecond-laser excitation : excitation-wavelength dependence

    Inami E., Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2010.08  The Physical Society of Japan (JPS)

  • 23aWX-3 Hot-electron effects of bulk-to-surface electron transfer on Si(001)-(2x1)

    Tanimura K., Kanasaki J.

    Meeting abstracts of the Physical Society of Japan  2010.08  The Physical Society of Japan (JPS)

  • 23aWX-2 Ultrafast relaxation of photo-injected holes in surface valence states on Si surfaces III

    Kanasaki J., Tanimura K.

    Meeting abstracts of the Physical Society of Japan  2010.08  The Physical Society of Japan (JPS)

▼display all

Industrial Property Rights

  • CVD of film without crystal defect involves depositing atoms composing wafer to remove voids, applying laser beam to wafer to remove declination and depositing semiconductor film

     More details

    property_type:Patent 

    Application no:US082370 

    Announcement no:US5367980-A 

    Publication no:US5367980-A 

  • 電子励起原子移動による表面ナノスケール構造の製造方法及び装置

    谷村克己,吉田博,金﨑順一

     More details

    property_type:Patent 

    Application no:2002-072174 

    Announcement no:2003-266398 

    Publication no:2003-266398 

    Patent/Registration no:3910474 

  • 完全無欠陥表面を作成する方法

    伊藤憲昭,中井靖男,服部賢,金﨑順一,岡野晃子

     More details

    property_type:Patent 

    Application no:4-267470 

    Announcement no:6-120138 

    Publication no:6-120138 

    Patent/Registration no:7-1053402062384 

Grant-in-Aid for Scientific Research

  • 光励起法によるグラフェン薄膜の原子層精密制御法の確立

    Grant-in-Aid for Scientific Research(C)  2023.04

  • マルチ軸機械歪を印加した超高歪ウルトラ薄膜化ゲルマニウムによる室温電流注入光利得

    Grant-in-Aid for Scientific Research(B)  2022

  • 時間・角度分解光電子差分分光による正孔動力学多次元イメージ法の開発

    Grant-in-Aid for Scientific Research(B)  2019.04

  • 極限時空間分光法の開発と光誘起構造相転移研究への応用

    Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2016.04

  • 物質構造科学の新展開 : フェムト秒時間分解原子イメージング

    Grant-in-Aid for Specially Promoted Research  2012.04

  • フェムト秒時間分解光電子分光法による半導体価電子正孔系の超高速動力学

    Grant-in-Aid for Scientific Research(C)  2011.04

  • 光誘起構造相転移動力学の研究

    Grant-in-Aid for Specially Promoted Research  2007.04

  • 可視光励起によるグラファイト・ダイヤモンド構造相転移に関する研究

    Grant-in-Aid for Challenging Research (Pioneering)/(Exploratory)  2007

  • 半導体表面二次元凝縮相における励起物性の研究

    Grant-in-Aid for Scientific Research(A)  2005.04

  • 低エネルギー電子線励起による半導体表面構造の不安定性

    Grant-in-Aid for Scientific Research(C)  2005.04

  • シリコン(001)表面における光誘起結合切断と新表面構造相の創製

    Grant-in-Aid for Scientific Research(B)  2003.04

  • レーザー光による表面原子操作

    Grant-in-Aid for Scientific Research on Priority Areas  1999.04

  • 化合物半導体表面における光誘起構造変化

    Grant-in-Aid for Scientific Research(C)  1999.04

  • 電子勃起を用いた原子分子操作

    Grant-in-Aid for Scientific Research on Priority Areas  1999.04

  • フェムト秒分光法による半導体再構成表面の光誘起原子過程の研究

    Grant-in-Aid for Scientific Research(B)  1997.04

  • 半導体表面における光誘起構造変化

    Grant-in-Aid for Scientific Research(C)  1996.04

  • 半導体表面における光化学エッチングの初期過程の研究

    Grant-in-Aid for Encouragement of Scientists  1993.04

  • レーザー誘起原子放出を用いた表面微量欠陥の定量法の確立

    一般研究B  1993.04

  • レーザー誘起原子放出によるシリコン表面欠陥制御

    Grant-in-Aid for Encouragement of Scientists  1992.04

  • 固体における電子励起誘起原子過程の研究

    Grant-in-Aid for Specially Promoted Research  1987.04

▼display all

Incentive donations / subsidies

  • 光励起法による炭素系2次元原子層物質の超精密構造制御

    池谷科学技術振興財団  単年度研究助成  2023.07

  • 光励起プロセスによる半導体表面構造のナノ制御

    池谷科学技術振興財団  2007.04

  • 半導体表面欠陥のキャラクタライゼイションおよびレーザー誘起原子放

    池谷科学技術振興財団  1995.04

Other subsidies, etc.

  • 国際交流等助成金

    池谷科学技術振興財団  2014.06

  • 吉田科学技術振興財団国際研究集会派遣助成

    吉田科学技術振興財団  1989.06

Charge of on-campus class subject

  • 固体分析学

    2021     Undergraduate

  • 材料科学

    2021     Undergraduate

  • 量子物性工学特論

    2021     Graduate school

  • Quantum Solid State Physics

    2023     Graduate school

  • 機械工学概論

    2022     Undergraduate

  • 機械工学基礎

    2022     Undergraduate

  • 初年次ゼミ

    2022   Weekly class   Undergraduate

  • Quantum Solid State Physics

    2022    

▼display all

Number of instructed thesis, researches

  • 2023

    Number of instructed the graduation thesis:Number of graduation thesis reviews:3

    [Number of master's thesis reviews] (chief):[Number of master's thesis reviews] (vice-chief):7

    [Number of doctoral thesis reviews] (vice-chief):1

  • 2022

    Number of instructed the graduation thesis:Number of graduation thesis reviews:2

    [Number of master's thesis reviews] (chief):[Number of master's thesis reviews] (vice-chief):5

Other

  • Job Career

    1999.10 - 2002.03

  • Job Career

    2002.04 - 2004.08