Updated on 2024/10/22

写真a

 
FUJIMURA Norihumi
 
Organization
Graduate School of Engineering Division of Physics and Electronics Professor
School of Engineering Department of Physics and Electronics
Title
Professor
Affiliation
Institute of Engineering
Contact information
メールアドレス
Homepage
http://www.pe.osakafu-u.ac.jp/device7/
Affiliation campus
Nakamozu Campus

Position

  • Graduate School of Engineering Division of Physics and Electronics 

    Professor  2022.04 - Now

  • School of Engineering Department of Physics and Electronics 

    Professor  2022.04 - Now

Degree

  • 博士（工学） （ Others ）

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials  / Physics of Novel Devices

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Research Interests

  • Magnetic Semiconductors

  • Polar semiconductors

  • physics of Ferroelectrics

  • Ferroelectric Devices

  • Strongly correlated ferroelectrics

  • ZnO

  • multiferroic devices

Research subject summary

  • 磁性半導体と磁性強誘電体を用いた不揮発性論理演算素子の開発

  • 分極を用いて高機能化したMOSFETの開発

  • 磁性半導体の作成とその物性

  • マルチフェロイック

  • 大気圧プラズマを用いた新機能物質の作成

  • 強誘電体と圧電体を用いたトランジスタの開発

  • 強誘電体と磁性半導体を用いたトランジスタの開発

  • 磁性半導体の物性

  • 磁性強誘電体の作製とその物性

  • 強誘電体ゲートトランジスタの開発

  • 強誘電体ゲートトランジスタの物性

Research Career

  • 　

    自発分極、強誘電体、電界効果、トランジスタ 

  • 　

    マルチフェロイック、磁性半導体、磁性強誘電体 

  • 　

    大気圧プラズマ、酸化物、窒化物、MOSFET 

  • 　

    強誘電体、圧電体、トランジスタ 

  • 　

    強誘電体、磁性半導体、不揮発性メモリ、論理演算素子 

  • 　

    半導体、磁性、磁性半導体 

  • 　

    強誘電体、磁性 

  • 　

    強誘電体、トランジスタ 

  • 　

    強誘電体、トランジスタ 

Professional Memberships

  • 日本セラミックス協会

    1995.04 - Now

  • Materials Research Soc.

    1994.04 - Now

  • 応用物理学会

    1984.04 - Now

  • 日本金属学会

    1984.04 - Now

Committee Memberships (off-campus)

  • 座長   堺市　NAKAMOZU イノベーションコア創出コンソーシアム  

    2021.04 - 2022.03 

  • Board Member   Journal of Advanced Dielectrics (JAD)  

    2021.04 - 2022.03 

  • 上級エリアコーディネーター   関西イノベーションイニシアティブ  

    2021.04 - 2022.03 

  • 座長   堺市　NAKAMOZU イノベーションコア創出コンソーシアム  

    2020.04 - 2021.03 

  • Board Member   Journal of Advanced Dielectrics (JAD)  

    2020.04 - 2021.03 

  • 上級エリアコーディネーター   関西イノベーションイニシアティブ  

    2020.04 - 2021.03 

  • 学外審査委員   兵庫県立大学  

    2019.04 - 2020.03 

  • 理事・副会長   日本誘電体学会(The Dielectric Society of Japan, DESJ)  

    2019.04 - 2020.03 

  • Chair of organizing committee   11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  

    2019.04 - 2020.03 

  • Program committee   Compound Semiconductor Week 2019  

    2019.04 - 2020.03 

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Awards

  • 日本セラミックス協会 第78回(2023年度)学術賞

    藤村 紀文

    2023.11   日本セラミックス協会   機能性セラミックス薄膜プロセッシングと物性制御に関する研究

  • 岡崎清賞

    2021.06   フルラス・岡崎記念会  

    　More details

    Country：Japan

  • 平成30年度 日本材料学会論文賞

    2019.05   日本材料学会  

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    Country：Japan

  • 第10回集積化MEMSシンポジウム　優秀論文賞

    2019.03   応用物理学会  

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    Country：Japan

  • ＪＪＡＰ編集貢献賞

    2005.04   応用物理学会  

  • 日本金属学会奨励賞

    1993.12   日本金属学会  

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Papers

  • Current sensing by using piezoelectric oscillators and physical reservoir computing Reviewed

    Kei Nishimura, Norifumi Fujimura, Takeshi Yoshimura

    Japanese Journal of Applied Physics (Special Issues)   63 ( 9 )   09SP23 - 09SP23   2024.09

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：Domestic journal  

    DOI： 10.35848/1347-4065/ad73e1

  • Enhancement of the piezoelectric properties of (100) BiFeO3 films on Si by all-sputtered epitaxial growth Reviewed

    S. Aphayvong, K. Takaki, N. Fujimura, T. Yoshimura

    Japanese Journal of Applied Physics (Special Issues)   63 ( 9 )   09SP06 - 09SP06   2024.09

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：Domestic journal  

    DOI： 10.35848/1347-4065/ad6d74

  • Dielectric properties of low-temperature-grown homoepitaxial (-201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD Reviewed

    Md. Earul Islam, Kento Shimamoto, Takeshi Yoshimura, Norifumi Fujimura

    14 ( 4 )   2024.04

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：International journal  

    DOI： 10.1063/5.0189793

  • Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation

    Nakamoto T.

    ACS Nano   18 ( 3 )   2455 - 2463   2024.01（ ISSN:19360851 ）

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  • Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique Reviewed

    Md. Earul Islam, Kento Shimamoto, Takeshi Yoshimura, Norifumi Fujimura

    AIP Advances   13 ( 11 )   115224 - 115224   2023.11

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1063/5.0178100

  • Spontaneous crystal fluctuation in hydrocarbon polymer–coated monolayer MoS2, MoSe2, WS2, and WSe2 with strong photoluminescence enhancement Reviewed

    T. Nakahara†, T. Kobayashi†, T. Dohi, T. Yoshimura, N. Fujimura, D. Kiriya († Equal contribution)

    10 ( 10 )   3605 - 3611   2023.10

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：International journal  

    DOI： 10.26434/chemrxiv-2023-gxzqw

    DOI： 10.1021/acsphotonics.3c00670

  • The ferroelectric orthorhombic phase formation of Hf0.5Zr0.5O2 thin films on (-201) β–Ga2O3 substrate by atomic layer deposition Reviewed

    K. Naito, K. Yamaguchi, T. Yoshimura, and N. Fujimura

    Japanese Journal of Applied Physics (Special Issues)   62 ( SM )   SM1018-1 - SM1018-5   2023.08（ ISSN:00214922 ）

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：Domestic journal  

    DOI： 10.35848/1347-4065/ace917

  • Piezoelectric MEMS-based physical reservoir computing system without time-delayed feedback Reviewed

    Takeshi Yoshimura, Taiki Haga, Norifumi Fujimura, Kensuke Kanda, and Isaku Kanno

    Japanese Journal of Applied Physics   62 ( SM )   SM1013-1 - SM1013-5   2023.08（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)  

    Abstract

    In this study, a physical reservoir computing system, a hardware-implemented neural network, was demonstrated using a piezoelectric MEMS resonator. The transient response of the resonator was used to incorporate short-term memory characteristics into the system, eliminating commonly used time-delayed feedback. In addition, the short-term memory characteristics were improved by introducing a delayed signal using a capacitance-resistor series circuit. A Pb(Zr,Ti)O<sub>3</sub>-based piezoelectric MEMS resonator with a resonance frequency of 193.2 Hz was employed as an actual node, and computational performance was evaluated using a virtual node method. Benchmark tests using random binary data indicated that the system exhibited short-term memory characteristics for two previous data and nonlinearity. To obtain this level of performance, the data bit period must be longer than the time constant of the transient response of the resonator. These outcomes suggest the feasibility of MEMS sensors with machine-learning capability.

    DOI： 10.35848/1347-4065/ace6ab

    Other URL： https://iopscience.iop.org/article/10.35848/1347-4065/ace6ab/pdf

  • Unusual Selective Monitoring of <i>N,N</i>-Dimethylformamide in a Two-Dimensional Material Field-Effect Transistor

    Akito Fukui, Keigo Matsuyama, Hiroaki Onoe, Shun Itai, Hidekazu Ikeno, Shunsuke Hiraoka, Kousei Hiura, Yuh Hijikata, Jenny Pirillo, Takahiro Nagata, Kuniharu Takei, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ACS Nano   17 ( 15 )   14981 - 14989   2023.07（ ISSN:1936-0851 ） （ eISSN:1936-086X ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1021/acsnano.3c03915

    PubMed

  • Efficient reservoir computing by nonlinearly coupled piezoelectric MEMS resonators Reviewed

    T. Yoshimura, T. Haga, N. Fujimura, K. Kanda, I. Kanno

    IEEE Transducers 2023   457   2023.06

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    Publishing type：Research paper (international conference proceedings)  

  • Spontaneous crystal fluctuation in hydrocarbon polymer–coated monolayer MoS2, MoSe2, WS2, and WSe2 with strong photoluminescence enhancement

    T Nakahara, T Kobayashi, T Dohi, T Yoshimura, N Fujimura, D Kiriya

    ChemRxiv, 2023   2023.04

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    DOI： 10.26434/chemrxiv-2023-gxzqw

  • Unusual selective monitoring of N,N-dimethylformamide in a two-dimensional layered field-effect transistor

    A. Fukui, K. Matsuyama, H. Onoe, S. Itai, H. Ikeno, S. Hiraoka, K. Hiura, Y. Hijikata, J. Pirillo, T. Nagata, K. Takei, T. Yoshimura, N. Fujimura, D. Kiriya

    ChemRxiv   2023.01

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    Kind of work：Joint Work  

    DOI： 10.26434/chemrxiv-2023-l8440

  • Selective isolation of mono to quad layered 2D materials via sonication-based solution engineering

    T. Nakamoto, K. Matsuyama, T. Yoshimura, N. Fujimura, D. Kiriya

    ChemRxiv   2022.12

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    Kind of work：Joint Work  

    DOI： 10.26434/chemrxiv-2022-lgp8l

  • Enhanced performance on piezoelectric MEMS vibration energy harvester by dynamic magnifier under impulsive force Reviewed

    Sengsavang Aphayvong, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura, Takeshi Yoshimura

    Applied Physics Letters   121 ( 17 )   172902 - 172902   2022.10（ ISSN:0003-6951 ） （ eISSN:1077-3118 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    Vibration energy harvesters that use resonance phenomena exhibit a high output power density for constant frequency vibrations, but they suffer from a significant drop in performance for non-steady-state vibrations, which are important for practical applications. In this work, we demonstrate that the output power under an impulsive force can be increased significantly by placing a U-shaped metal component, called a dynamic magnifier (DM), under an MEMS piezoelectric vibration energy harvester (MEMS-pVEH) with a 6 mm long cantilever using a 3  μm thick Pb(Zr,Ti)O<sub>3</sub> film. Based on the results of numerical calculations using a model of pVEH with a two-degree-of-freedom (2DOF) system, the DM was designed to have the same resonant frequency as the MEMS-pVEH and a high mechanical quality factor ([Formula: see text]). The waveforms of the output voltage of the fabricated 2DOF-pVEHs were measured for impulsive forces with various duration times, and the output power was calculated by integrating the waveforms over time. The output power of the MEMS-pVEH placed on the DM with a [Formula: see text] of 56 showed a gradual change according to the duration of applying an impulsive force and a maximum of 19 nJ/G<sup>2</sup> (G: gravitational acceleration) when the duration of the impulsive force was 3.8 ms. This result was about 90 times greater than the output power of the MEMS-pVEH without a DM. While it is not easy to fabricate pVEHs with a complex 2DOF structure using only the MEMS process, we have demonstrated that the output power can be significantly improved by adding a spring structure to a simple MEMS-pVEH.

    DOI： 10.1063/5.0116838

  • Strong Photoluminescence Enhancement in Molybdenum Disulfide in Aqueous Media Reviewed

    Daisuke Kimura, Shotaro Yotsuya, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    Langmuir   38 ( 43 )   13048 - 13054   2022.10（ ISSN:0743-7463 ） （ eISSN:1520-5827 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    The interface between conventional semiconductors and aqueous ionic solutions is an important target in chemistry and materials science. Recently, a wide variety of research has been done on transition-metal dichalcogenides (TMDCs) for use as 2D layered semiconductors, and their optoelectronic properties have been widely explored. One representative TMDC, monolayer (1L) MoS2, is known to show a photoluminescence (PL) signal of a direct band gap nature, and the PL intensity is dependent on the carrier concentration. Various methods of 1L MoS2carrier modulation have been shown to enhance the PL intensity in dry environments. In contrast, enhancement in an aqueous environment is limited, and a strategy to design an interface with aqueous media has not yet been established. One proposed idea was an aqueous acid interface; however, the enhancement of the PL with this method was usually minimal, about 1 order of magnitude. In this study, we demonstrate a method to achieve strong PL enhancement in 1L MoS2in an aqueous media by incorporating bis(trifluoromethane)sulfonyl anion (TFSI-ion) in an acidic environment. With the addition of the TFSI-ion in an acidic environment, the enhancement factor of the PL in 1L MoS2is more than 100 times greater than its PL intensity in water. The molecular anion is the key factor, as the TFSI-ion facilitates the oxidation of MoS2. This anionic effect is the additional factor needed to modulate the optoelectronic properties of 2D semiconductors in aqueous media. The proposed idea could have potential applications for biochemical sensors in aqueous situations.

    DOI： 10.1021/acs.langmuir.2c01601

    PubMed

  • Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping Reviewed

    Keigo Matsuyama, Ryuya Aoki, Kohei Miura, Akito Fukui, Yoshihiko Togawa, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ACS Applied Materials and Interfaces   14 ( 6 )   8163 - 8170   2022.02（ ISSN:1944-8244 ） （ eISSN:1944-8252 ）

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    Publishing type：Research paper (scientific journal)  

    Carrier modulation in transition-metal dichalcogenides (TMDCs) is of importance for applying electronic devices to tune their transport properties and controlling phases, including metallic to superconductivity. Although the surface charge transfer doping method has shown a strong modulation ability of the electronic structures in TMDCs and a degenerately doped state has been proposed, the details of the electronic states have not been elucidated, and this transport behavior should show a considerable thickness dependence in TMDCs. In this study, we characterize the metallic transport behavior in the monolayer and multilayer MoS2 under surface charge transfer doping with a strong electron dopant, benzyl viologen (BV) molecules. The metallic behavior transforms to an insulative state under a negative gate voltage. Consequently, metal-insulator transition (MIT) was observed in both monolayer and multilayer MoS2 correlating with the critical conductivity of order e2/h. In the multilayer case, the BV molecules strongly modulated the topmost surface layer in the bulk MoS2; the transfer characteristics suggested a crossover from a heterogeneously doped state with a doped topmost layer to doping in the deep layers caused by the variation in the gate voltage. The findings of this work will be useful for understanding the device characteristics of thin-layered materials and for applying them to the controlling phases via carrier modulation.

    DOI： 10.1021/acsami.1c22156

    PubMed

  • Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique. Reviewed

    A. Fukui†, Y. Aoki†, K. Matsuyama, H. Ichimiya, R. Nouchi, K. Takei, A. Ashida, T. Yoshimura, N. Fujimura, D. Kiriya († Equal contribution)

    Nanotechnology   33 ( 7 )   075602 - 075602   2021.11

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：International journal  

    Graphene nanoribbon (GNR)-based materials are a promising device material because of their potential high carrier mobility and atomically thin structure. Various approaches have been reported for preparing the GNR-based materials, from bottom-up chemical synthetic procedures to top-down fabrication techniques using lithography of graphene. However, it is still difficult to prepare a large-scale GNR-based material. Here, we develop a procedure to prepare a large-scale GNR network using networked single-layer inorganic nanowires. Vanadium pentoxide (V2O5) nanowires were assembled on graphene with an interfacial layer of a cationic polymer via the electrostatic interaction. A large-scale nanowire network can be prepared on graphene and is stable enough for applying an oxygen plasma. Using plasma etching, a networked graphene structure can be generated. Removing the nanowires results in a networked flat structure whose both surface morphology and Raman spectrum indicate a GNR networked structure. The field-effect device indicates the semiconducting character of the GNR networked structure. This work would be useful for fabricating a large-scale GNR-based material as a platform for GNR junctions for physics and electronic circuits.

    DOI： 10.1088/1361-6528/ac3615

    PubMed

  • 原子層半導体と分子性化合物の融合機能化

    桐谷乃輔, 藤村紀文

    材料 雑誌 日本材料学会   70 ( 10 )   721 - 726   2021.10

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    Kind of work：Joint Work  

  • Investigation of the wake-up process and time-dependent imprint of Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> film through the direct piezoelectric response

    Kenshi Takada, Mikio Murase, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Norifumi Fujimura, Takeshi Yoshimura

    Applied Physics Letters   119 ( 3 )   2021.07（ ISSN:0003-6951 ）

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    Publishing type：Research paper (scientific journal)  

    Ferroelectric HfO2-based thin films, which have been attracting a great deal attention because of their potential use in various applications, are known for their unique properties, such as a large time-dependent imprint and wake-up effect, which differentiate them from conventional ferroelectric materials. In this study, direct piezoelectric measurement was employed to investigate the state of polarization during the retention and wake-up process without applying an electric field. The polarization-electric field hysteresis loop of a sputtered Hf0.5Zr0.5O2 (HZO) film with a thickness of 10 nm showed a time-dependent imprint at room temperature during polarization retention, and the internal electric field that generated the imprint gradually increased from 0.05 to 0.6 MV/cm. While a space charge density of more than 1 μC/cm2 is required to form such an internal electric field, it was found that the magnitude of the direct piezoelectric response did not change at all during polarization retention. On the other hand, both the remanent polarization and direct piezoelectric response increased during the wake-up process. Based on the difference in the variation over time of these two characteristics, we concluded that the non-ferroelectric layer exists at the interface between the HZO film and TaN electrode and gradually transitions to ferroelectric phases through the electric field cycle.

    DOI： 10.1063/5.0047104

  • Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO<inf>3</inf> ferroelectric epitaxial thin film

    K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura

    AIP Advances   11 ( 7 )   2021.07（ eISSN:2158-3226 ）

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    Publishing type：Research paper (scientific journal)  

    The electron excitation mechanism and the spin accompanied by electron transition in a multiferroic YMnO3 epitaxial thin film were studied using photoluminescence (PL) spectroscopy. The thin film exhibits an intra-atomic transition of Mn3+ and the A1 optical coherent phonon. This study particularly focuses on the correlation between the electron transition corresponding to the on-site Coulomb energy and antiferromagnetic spin order. To clarify the complex excitation mechanism, the excitation energy and temperature dependences of the PL were analyzed. The key finding was that the intensities of the PL band at 1.43 eV increase as the excitation energy approaches the absorption peak energy corresponding to the on-site Coulomb energy and as the temperature decreases below 80 K, corresponding to the Néel temperature. These results suggest that the PL band is mediated by the spin-flip and relaxation processes.

    DOI： 10.1063/5.0055052

  • Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response Reviewed

    K Takada, M Murase, S Migita, Y Morita, H Ota, N Fujimura, T Yoshimura

    Applied Physics Letters 雑誌 米国物理学協会   119 ( 3 )   2021.07

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    Kind of work：Joint Work  

  • Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO3 ferroelectric epitaxial thin film Reviewed

    K. Miura, D. Kiriya, T. Yoshimura, and N. Fujimura

    AIP Advances 雑誌 American Institute of Physics   11   2021.07

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    Kind of work：Joint Work  

  • Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation

    Yuki Yamada, Yan Zhang, Hidekazu Ikeno, Keisuke Shinokita, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya

    ACS Applied Materials & Interfaces   13 ( 21 )   25280 - 25289   2021.06（ ISSN:1944-8244 ） （ eISSN:1944-8252 ）

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1021/acsami.1c04980

  • Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films Reviewed

    Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura

    7 ( 8 )   2100151 - 2100151   2021.06

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    The discovery of the HfO2-based ferroelectric films has opened new opportunities for using this silicon-compatible ferroelectric material to realize low-power logic circuits and high-density non-volatile memories. The functional performances of ferroelectrics are intimately related to their dynamic response to external stimuli, such as electric fields at finite temperatures. In the case of HfO2-based films, the time-dependent imprint and wake-up effect, which distinguish them from conventional ferroelectrics, play important roles in understanding the remaining reliability issues, such as insufficient endurance. In this study, the time-dependent imprint process is carefully investigated using Hf0.5Zr0.5O2 (HZO) films with different ferroelectric properties and defect density. The amount of redistributed charge, which causes imprint during polarization retention, is affected by the remanent polarization of the ferroelectric layer, suggesting that the depolarization field corresponding to the remanent polarization generates and works as a driving force of charge redistribution. The time-dependent measurement of the imprint distinguishes the origins of charge redistribution processes, which have different time constants. In addition, the correlation between the amount of redistributed charge and the dielectric relaxation of the HZO films is discussed. Correlations are identified between the redistributed charge and the dielectric relaxation, indicating that the mobile charge contributes to the time-dependent imprint.

    DOI： 10.1002/aelm.202100151

  • Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation Reviewed

    Y. Yamada, Y. Zhang, H. Ikeno, K. Shinokita, T. Yoshimura, A. Ashida, N. Fujimura, K. Matsuda, and D. Kiriya

    ACS Applied Materials & Interfaces 雑誌 American Chemical Society   13 ( 21 )   2021.05

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    Kind of work：Joint Work  

  • Strong Photoluminescence Enhancement from Bilayer Molybdenum Disulfide via the Combination of UV-irradiation and Superacid Molecular Treatment Reviewed

    Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Sciences   11 ( 8 )   3530 - 3530   2021.04（ eISSN:2076-3417 ）

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    Publishing type：Research paper (scientific journal)   International / domestic magazine：International journal  

    A direct band gap nature in semiconducting materials makes them useful for optical devices due to the strong absorption of photons and their luminescence properties. Monolayer transition metal dichalcogenides (TMDCs) have received significant attention as direct band gap semiconductors and a platform for optical applications and physics. However, bilayer or thicker layered samples exhibit an indirect band gap. Here, we propose a method that converts the indirect band gap nature of bilayer MoS2, one of the representative TMDCs, to a direct band gap nature and enhances the photoluminescence (PL) intensity of bilayer MoS2 dramatically. The procedure combines UV irradiation with superacid molecular treatment on bilayer MoS2. UV irradiation induces the conversion of the PL property with an indirect band gap to a direct band gap situation in bilayer MoS2 when the interaction between the top and bottom layers is weakened by a sort of misalignment between them. Furthermore, the additional post-superacid treatment dramatically enhances the PL intensity of bilayer MoS2 by a factor of 700×. However, this procedure is not effective for a conventional bilayer sample, which shows no PL enhancement. From these results, the separated top layer would show a strong PL from the superacid treatment. The monolayer-like top layer is physically separated from the substrate by the intermediate bottom MoS2 layer, and this situation would be preferable for achieving a strong PL intensity. This finding will be useful for controlling the optoelectronic properties of thick TMDCs and the demonstration of high-performance optoelectronic devices.

    DOI： 10.3390/app11083530

  • Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films Reviewed

    M. Murase, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPC05 - SPPC05   2020.09（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)  

    For a comprehensive study of the growth mechanisms of Pb(Zr,Ti)O3 (PZT), we employed a combinatorial sputtering method that enabled us to fabricate films with composition and substrate temperature gradients in-plane. The gradient of the amount of Pb supply was created using PZT ceramic and Pb3O4 powder targets. The substrate temperature gradient was generated in an orthogonal direction by inserting a shadow mask between the heater and substrate. The PZT film was deposited on uniformly deposited (001)LaNiO3/Si in a substrate temperature range of 490 °C-570 °C. It was determined that although the growth condition of PZT films has a relatively large process window, the orientation is easily changed by the temperature and the amount of Pb supply. In addition, the range of the growth temperature, where the films show ferroelectricity decreases with decreasing the amount of Pb supply.

    DOI： 10.35848/1347-4065/abb4c0

    Other URL： https://iopscience.iop.org/article/10.35848/1347-4065/abb4c0/pdf

  • Investigation of efficient piezoelectric energy harvesting from impulsive force Reviewed

    S. Aphayvong, T. Yoshimura, S. Murakami, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPD04 - SPPD04   2020.08（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    © 2020 The Japan Society of Applied Physics. This study investigated the electromechanical properties of MEMS piezoelectric vibration energy harvesters (MEMs-pVEHs) under various impulsive forces to discuss effective harvesting energy from random vibrations. MEMS-pVEHs with different resonance frequencies with an energy conversion efficiency close to the theoretical maximum were used. The output waveforms for various impulsive force could be fitted well with the dynamic model of pVEHs. The output energy density reached 34 nJ g-1 for an impulsive force with an acceleration of 8 m s-2. To obtain high energy conversion efficiency, pVEHs should have a response time longer than the duration of the impulsive force; efficiency higher than 50% was obtained by an impulsive force with a short duration. Furthermore, the study investigated the pVEH requirements for impulsive force based on the results of numerical simulation.

    DOI： 10.35848/1347-4065/abad16

    Other URL： https://iopscience.iop.org/article/10.35848/1347-4065/abad16/pdf

  • Change in the defect structure of composition controlled single-phase YbFe2O4 epitaxial thin films Reviewed

    K. Shimamoto, J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPB07 - SPPB07   2020.08（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    © 2020 The Japan Society of Applied Physics. A new type of ferroelectricity, originating from charge order and coupled to magnetism, occurs in YbFe2O4 containing triangular Fe/O double layers, which has recently generated great interest in this material. YbFe2O4 tolerates more than 10% iron deficiency even in bulk single crystals with space group R3m. Even though a large number of Fe deficiencies are introduced in the thin film form due to vaporization of Fe ions during deposition at high temperatures, the crystal structure with the space group of R3m in the films never changes within the Fe/Yb composition ratio from 1.3 to 2.2. In the previous research, the effects of the Fe/Yb composition ratio - especially in the large Fe deficient area (1.31-1.86) - on the lattice distortion and chemical bonding state of non-stoichiometric (0001)-oriented YbFe2O4 epitaxial thin films on (111) YSZ and (0001) sapphire substrates were examined. The variation of the lattice constant, Raman spectra, and optical absorption coefficient indicated that the existence of the stacking fault and the antisite Yb play an important role in the significant iron deficiency without changing the crystal structure of non-stoichiometric YbFe2O4 thin films.

    DOI： 10.35848/1347-4065/aba9b2

    Other URL： https://iopscience.iop.org/article/10.35848/1347-4065/aba9b2/pdf

  • Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide Reviewed

    Yuki Yamada, Keisuke Shinokita, Yasuo Okajima, Sakura N. Takeda, Yuji Matsushita, Kuniharu Takei, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya

    ACS Applied Materials & Interfaces   12 ( 32 )   36496 - 36504   2020.07（ ISSN:1944-8244 ） （ eISSN:1944-8252 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    © 2020 American Chemical Society. To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer transition-metal dichalcogenides (TMDCs) are candidates for this, but their quantum yield (QY) is known to be poor. Recently, a molecular superacid treatment of bis(trifluoromethane)sulfonimide (TFSI) generated unambiguously bright monolayer TMDCs and a high QY. However, this method is highly dependent on the processing conditions and therefore has not been generalized. Here, we shed light on environmental factors to activate the photoluminescence (PL) intensity of the TFSI-treated monolayer MoS2, with a factor of more than 2 orders of magnitude greater than the original by photoactivation. The method is useful for both mechanically exfoliated and chemically deposited samples. The existence of photoirradiation larger than the band gap demonstrates enhancement of the PL of MoS2; on the other hand, activation by thermal annealing, as demonstrated in the previous report, is less effective for enhancing the PL intensity. The photoactivated monolayer MoS2 shows a long lifetime of ∼1.35 ns, more than a 30-fold improvement over the original as exfoliated. The consistent realization of the bright monolayer MoS2 reveals that air exposure is an essential factor in the process. TFSI treatment in a N2 environment was not effective for achieving a strong PL, even after the photoactivation. These findings can serve as a basis for engineering the bright atomically thin materials for 2D optoelectronics.

    DOI： 10.1021/acsami.0c09084

    PubMed

  • Investigation of the electrocaloric effect in ferroelectric polymer film through direct measurement under alternating electric field Reviewed

    Yuji Matsushita, Takeshi Yoshimura, Daisuke Kiriya, Norifumi Fujimura

    Applied Physics Express   13 ( 4 )   041007 - 041007   2020.04（ ISSN:1882-0778 ） （ eISSN:1882-0786 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    © 2020 The Japan Society of Applied Physics. The electrocaloric (EC) effect of ferroelectric polymer film was investigated at a high frequency. The analysis used the finite element method and revealed that the extractive heat density per unit of time increases and the thermal diffusion length decreases with an increase in the frequency of the driving electric field. Given the small thermal diffusion coefficient of ferroelectric polymers, the high-frequency drive of the EC effect for ferroelectric polymer film is promising for cooling devices. To discuss the EC effect under an alternating current (AC) electric field, the EC temperature change of the vinylidene fluoride-trifluoroethylene copolymer 75/25 P(VDF-TrFE) film with a thickness of 2 μm was characterized through direct measurement using a thin-film thermocouple. The EC temperature change increases with an increase in the electric field and frequency and reached up to 0.23 °C at 1.5 MV cm-1 and 10 kHz. The extractive heat density was estimated to be as high as 0.69 W cm-2

    DOI： 10.35848/1882-0786/ab8053

    Other URL： https://iopscience.iop.org/article/10.35848/1882-0786/ab8053/pdf

  • Valence states and the magnetism of Eu ions in Eu-doped GaN Reviewed

    Takumi Nunokawa, Yasufumi Fujiwara, Yusuke Miyata, Norifumi Fujimura, Takahiro Sakurai, Hitoshi Ohta, Akira Masago, Hikari Shinya, Tetsuya Fukushima, Kazunori Sato, Hiroshi Katayama-Yoshida

    Journal of Applied Physics   127 ( 8 )   083901 - 083901   2020.02（ ISSN:0021-8979 ） （ eISSN:1089-7550 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1063/1.5135743

  • Output Power of Piezoelectric MEMS Vibration Energy Harvesters under Random Oscillation

    S. Murakami, T. Yoshimura, M. Aramaki, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura

    Journal of Physics: Conference Series   1407 ( 1 )   2019.12（ ISSN:1742-6588 ） （ eISSN:1742-6596 ）

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    Publishing type：Research paper (international conference proceedings)  

    © Published under licence by IOP Publishing Ltd. The output characteristics of MEMS piezoelectric vibration energy harvesters (PVEHs) under random oscillations are analysed. We fabricated cantilever-type MEMS-PVEHs using Pb(Zr,Ti)O3 films. The autocorrelation function of the transient displacement of the cantilever tip under random oscillations features a narrow-band random vibration. From the power spectral density (PSD) of the output voltage of the PVEHs, the resonance frequency decreases and the full-width at half-maximum increases with increasing vibration acceleration. By comparing output properties under various sinusoidal oscillations, nonlinear effects including the soft-spring effect and nonlinear damping effect clearly influence the output characteristics under random oscillations. The power generation is proportional to the square of the vibration acceleration even in the acceleration region where nonlinear effects become conspicuous.

    DOI： 10.1088/1742-6596/1407/1/012082

  • Quantitative analysis of the direct piezoelectric response of bismuth ferrite films by scanning probe microscopy Reviewed

    Kento Kariya, Takeshi Yoshimura, Katsuya Ujimoto, Norifumi Fujimura

    Scientific Reports   9 ( 1 )   19727 - 19727   2019.12（ eISSN:2045-2322 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    © 2019, The Author(s). Polarisation domain structure is a microstructure specific to ferroelectrics and plays a role in their various fascinating characteristics. The piezoelectric properties of ferroelectrics are influenced by the domain wall contribution. This study provides a direct observation of the contribution of domain walls to the direct piezoelectric response of bismuth ferrite (BiFeO3) films, which have been widely studied as lead-free piezoelectrics. To achieve this purpose, we developed a scanning probe microscopy-based measurement technique, termed direct piezoelectric response microscopy (DPRM), to observe the domain structure of BiFeO3 films via the direct piezoelectric response. Quantitative analysis of the direct piezoelectric response obtained by DPRM, detailed analysis of the domain structure by conventional piezoelectric force microscopy, and microscopic characterisation of the direct piezoelectric properties of BiFeO3 films with different domain structures revealed that their direct piezoelectric response is enhanced by the walls between the domains of spontaneous polarisation in the same out-of-plane direction.

    DOI： 10.1038/s41598-019-56261-w

    PubMed

    Other URL： http://www.nature.com/articles/s41598-019-56261-w.pdf

  • The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO2-based films Reviewed

    Kenshi Takada, Yuki Saho, Takeshi Yoshimura, Norifumi Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   SLLB03 - SLLB03   2019.11（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019 The Japan Society of Applied Physics. To investigate the effects of small amounts of oxygen on the crystal growth process and structural changes in HfO2-based films, film was deposited on a Si substrate using HfO2 and ZrO2 targets via RF magnetron co-sputtering with small amounts of added O2. Even when the deposition was carried out without heating, the most stable monoclinic phase mainly formed at O2 partial pressures above 1 mPa, where the sputtering maintained the oxide mode in the as-deposited state. With decreasing O2 partial pressure, the amorphous component increased. During the annealing process, the metastable tetragonal or orthorhombic phase crystallized when the amorphous film was deposited at a lower O2 partial pressure of 1 mPa. The volume fraction of the metastable phase decreased abruptly at an O2 partial pressure at which the sputtering mode changed from metal mode to oxide mode. These results indicate that the O2 partial pressure during deposition have an effect on the crystal growth process and causes structural changes in the film even after the annealing process.

    DOI： 10.7567/1347-4065/ab37cb

    Other URL： http://iopscience.iop.org/article/10.7567/1347-4065/ab37cb/pdf

  • Piezoelectric energy harvesting from AC current-carrying wire Reviewed

    Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   SLLD10 - SLLD10   2019.11（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019 The Japan Society of Applied Physics. The magnetic field surrounding an AC current-carrying wire is a promising source for energy harvesting. In this study, an AC magnetic field energy harvester is developed based on the piezoelectric vibration energy harvester. A permanent magnet placed near the AC current-carrying wire vibrates by coupling with the AC magnetic field. The kinetic energy of the vibration can be converted by the piezoelectric effect. Theoretical analysis indicates that the harvester composed of a piezoelectric cantilever with a permanent magnet at the free end should be placed so that the magnet and the wire do not collide. Then, the harvester was fabricated using a piezoelectric bimorph cantilever with a mechanical quality factor of 66 and a generalized electromechanical coupling factor (K 2) of 3.1% and a neodymium magnet with a mass of 3.1 g. At an AC current of 5 Arms with a frequency of 50 Hz, an output of 1.3 mW was obtained.

    DOI： 10.7567/1347-4065/ab3e57

    Other URL： http://iopscience.iop.org/article/10.7567/1347-4065/ab3e57/pdf

  • Perspectives of Novel Applications of Ferroelectric/Piezoelectric Thin Films for Smart Systems Reviewed

    Norifumi Fujimura and Takeshi Yoshimura

    Materials Research Meeting 2019   2019.10

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    Kind of work：Joint Work  

  • Fabrication of chemical composition controlled YbFe2O4 epitaxial thin films Reviewed

    J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys.   58 ( SL )   SLLB11 - SLLB11   2019.08（ ISSN:0021-4922 ） （ eISSN:1347-4065 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

    © 2019 The Japan Society of Applied Physics. The crystal growth of YbFe2O4 requires oxidant-poor conditions, thus YbFe2O4 usually contains a large number of iron deficiencies even in the bulk single crystal. The use of an ArF laser for laser ablation is effective to reduce the amount of active oxygen species and a wide process window to form the YbFe2O4 epitaxial films becomes available. By using the widened process window and an iron-rich target, the chemical composition of the YbFe2O4 epitaxial thin films is successfully controlled. The effect of the iron composition on the charge ordering transition can be discussed using the nonlinear I-V behavior. The threshold electric field changes depending on the iron composition owing to the broadening of the 3-dimensional (3D) charge order region, which affects the robustness of the 3D charge order against an electric field in YbFe2O4 thin films.

    DOI： 10.7567/1347-4065/ab3959

  • Convection‐Flow‐Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface‐Charge Transfer Doping of Molybdenum Disulfide Reviewed

    Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ChemistryOpen   8 ( 7 )   908 - 914   2019.07（ ISSN:2191-1363 ） （ eISSN:2191-1363 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA. Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post-silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non-destructive modulation method. Recently, a surface-charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures. The successful dopant is a neutral benzyl viologen (BV0); however, the problem remains of how to effectively prepare the BV0 molecules. A reduction process with NaBH4 in water has been proposed as a preparation method, but the NaBH4 simultaneously reacts vigorously with the water. Here, a simple method is developed, in which the reaction vial is placed on a hotplate and a fragment of air-stable metal is used instead of NaBH4 to prepare the BV0 dopant molecules. The prepared BV0 molecules show a strong doping ability in terms of achieving a degenerate situation of a TMDC, MoS2. A key finding in this preparation method is that a convection flow in the vial effectively transports the produced BV0 to a collection solvent. This method is simple and safe and facilitates the tuning of the optoelectronic properties of nanomaterials by the easily-handled dopant molecules.

    DOI： 10.1002/open.201900169

    Other URL： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/open.201900169

  • Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor Reviewed

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Sensors and Actuators A: Physical   291   167 - 173   2019.06（ ISSN:0924-4247 ）

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    © 2019 Elsevier B.V. The present study reports the improvement of piezoelectric properties of sputtered BiFeO 3 films, and application to piezoelectric MEMS vibration energy harvesters (MEME-pVEHs). (100)-oriented BiFeO 3 films were obtained on (100)-oriented LaNiO 3 bottom electrodes grown on (100) Si substrates at deposition temperatures ranging from 450 °C to 550 °C. While all the films showed well-defined ferroelectric hysteresis loops at room temperature, the highest e 31,f coefficient of −3.6 C/m 2 was obtained at 500 °C. The increase of the e 31,f coefficient with increasing of the Rayleigh constant indicates the domain wall substantially contributes to the piezoelectric properties of the BiFeO 3 films. MEMS-pVEHs measuring 1 × 6 mm 2 and Si proof mass of 3.0 mg were fabricated using the BiFeO 3 film. The resonance frequency, electromechanical coupling factor, and mechanical quality factor were determined as 151.2 Hz, 0.1%, and 850, respectively. The maximum output power was 2.4 μW at 0.3 G, which is comparable with that of the best-performing MEMS-pVEHs using Pb(Zr,Ti)O 3 films.

    DOI： 10.1016/j.sna.2019.03.050

  • Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment Reviewed

    Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Physics Express   12 ( 5 )   051014 - 051014   2019.05（ ISSN:1882-0778 ） （ eISSN:1882-0786 ）

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    © 2019 The Japan Society of Applied Physics. Monolayer molybdenum disulfide's (MoS2) direct band gap nature makes it a good platform for realizing atomically thin optoelectronic devices. However, an issue is its low luminescence brightness. In this research, we demonstrate a strategy to achieve strong photoluminescence (PL) of monolayer MoS2, by treatment with a redox-active molecule, fluoranil. An important finding is that the factor of PL enhancement depends strongly on the solvent used and the PL changes by more than one order of magnitude. This work is useful for harnessing the strong optical properties of MoS2 by the combination of oxidizing molecules and engineering the solvent used.

    DOI： 10.7567/1882-0786/ab1544

    Other URL： http://iopscience.iop.org/article/10.7567/1882-0786/ab1544/pdf

  • Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules Reviewed

    Hisashi Ichimiya, Masahiro Takinoue, Akito Fukui, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    ACS Applied Materials & Interfaces   11 ( 17 )   15922 - 15926   2019.05（ ISSN:1944-8244 ） （ eISSN:1944-8252 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019 American Chemical Society. Modulating the electronic structure of semiconducting materials is critical to developing high-performance electronic and optical devices. Transition metal dichalcogenides (TMDCs) are atomically thin semiconducting materials. However, before they can be used successfully in electronic and optical devices, modulation of their carrier concentration at the nanometer scale must be achieved. Molecular doping has been successful in modulating the carrier concentration; however, the scientific approach for selective and local carrier doping at the nanometer scale is still missing. Here, we demonstrate a proof-of-concept of modulating the carrier concentration of TMDCs laterally on a scale of around 100 nm using spontaneous pattern formation of an ultrathin film consisting of molecular electron dopants. When the water made contact with the molecular film (∼10 nm), a spontaneous pattern formation was observed on both the monolayer and bulk TMDCs. We revealed that the pattern-formation dynamics and nanoscopic flow rate of the molecules were highly dependent on the thickness of the TMDCs, since the band gap varies based on the number of layers. Analyses of topographic images of the molecular patterns and photoluminescence spectra of the TMDCs indicated that the spontaneously patterned molecular films induced a local carrier doping. Our results demonstrate a spontaneous formation of a mosaic electronic structure. This work is useful for making tiny-scale electronic junctions on TMDCs and semiconducting materials to make numerous p/n junctions simultaneously for optoelectronic devices.

    DOI： 10.1021/acsami.9b03367

    PubMed

  • Time-Resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction Reviewed

    Norifumi Fujimura Kenshi Takada Takeshi Yoshimura

    2019 MRS Spring Meeting   2019.04

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    Kind of work：Joint Work  

  • Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system Reviewed

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura

    Applied Physics Letters   114 ( 13 )   133902 - 133902   2019.04（ ISSN:0003-6951 ） （ eISSN:1077-3118 ）

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    © 2019 Author(s). Enhancing the output power at small input acceleration is a major concern for enabling practical application of vibration energy harvesters. In this study, a two-degree of freedom system (2-DOF) was employed to solve this issue. The numerical calculations using the lumped parameter model of the piezoelectric vibration energy harvesters (pVEHs) with 2-DOF indicate that the harvesters show two resonance peak and an increase in the output power of several ten times compared with the harvester with a single degree of freedom. Based on calculations, the prototype of pVEH with 2-DOF was fabricated using a micro-machined pVEH and a metal cantilever. The output power of the harvester is 3.4 μW at 0.1 Grms, which is 17 times higher than that of the micro-electro-mechanical system-pVEH. Moreover, the resonance frequency on the pVEH with 2-DOF is easily adjusted because of the coupled vibration of the two masses.

    DOI： 10.1063/1.5093956

  • Fabrication and Characterization of (Ba,La)SnO3 Semiconducting Epitaxial Films on (111) and (001) SrTiO3 Substrates Reviewed

    Kohei Miura, Daisuke Kiriya, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura

    physica status solidi (a)   216 ( 5 )   1700800 - 1700800   2019.03（ ISSN:1862-6300 ） （ eISSN:1862-6319 ）

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    Publishing type：Research paper (scientific journal)  

    © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Recently, BaSnO 3 has attracted great attention as a promising transparent oxide semiconductor with a large bandgap (3.3 eV) and high mobility (320 cm 2 V −1 s −1 ), and many reports have discussed the origin of its high mobility. Specifically, its effective mass m* has been investigated with both calculations and experiments. First-principles calculations have suggested that m* is small near the Γ point and that this m* assists the high mobility. Therefore, it is quite important to study the anisotropy in the mobility of this material. However, except for (001) BaSnO 3 , there are almost no reports on the electrical transport properties of the films with other orientations. In this paper, the authors fabricate (111) and (001) (Ba,La)SnO 3 films by using pulsed laser deposition to evaluate the structural differences including the epitaxial strain and the orientation distribution generated from the differences in the growth mode that is originated in the ionic arrangement of each surface. The effects of the structural differences for the conductivities of (001) and (111) films and how do the authors achieve the epitaxial films with high mobility are discussed.

    DOI： 10.1002/pssa.201700800

  • Saturated and Pinched Ferroelectric Hysteresis Loops in BiFeO3 Ceramics Reviewed

    Jin Hong Choi, Takeshi Yoshimura, Norifumi Fujimura, Chae Il Cheon

    Journal of the Korean Physical Society   74 ( 3 )   269 - 273   2019.02（ ISSN:0374-4884 ） （ eISSN:1976-8524 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019, The Korean Physical Society. BiFeO 3 (BFO) ceramics were prepared by conventional solid-state reaction method without quenching. The effect of the sintering condition on the phase evolution and the ferroelectric properties of these BFO ceramics were investigated. A pinched polarization - electric field (P-E) hysteresis loop was observed in the sample sintered at high temperature for a short period (820 °C for 1 hour) because the domain wall motion is restricted by a large number of ionic defects such as oxygen vacancies. The BFO sample sintered at low temperature for a long period (760 °C for 6 hours) displayed a well-saturated P-E hysteresis loop due to its low ionic defect density.

    DOI： 10.3938/jkps.74.269

    Other URL： http://link.springer.com/content/pdf/10.3938/jkps.74.269.pdf

  • Time-resolved simulation of the negative capacitance stage emerging at the ferroelectric/semiconductor hetero-junction Reviewed

    K. Takada, T. Yoshimura, N. Fujimura

    AIP Advances   9 ( 2 )   025037 - 025037   2019.02（ eISSN:2158-3226 ）

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    Publishing type：Research paper (scientific journal)  

    © 2019 Author(s). Recently, a number of papers have demonstrated sub-60 mV/decade switching by using the negative capacitance (NC) effect in ferroelectric-gate FETs. However, the physical picture is not yet understood. In this paper, an alternative physical picture for emerging NC is proposed and the development of the NC stage at the ferroelectric/semiconductor hetero-junction is described. Proposed physical picture is based on two factors, 1. "decrease in an additional voltage originated from the depolarization field by surface potential of semiconductor" and 2. "Change in the distribution ratio of gate voltage (V G ) to voltage applied to the ferroelectric layer (V F ) and surface potential of the semiconductor (ψ S ) due to the capacitance change of semiconductor." With considering these two essential phenomena, time-resolved simulations of the NC stage emerging at the ferroelectric/semiconductor hetero-junction were carried out. This NC phenomena expressed by the negative differential of the D F for the V F , i.e. (D F /V F <0), emerging in the MFS (metal/ferroelectric/semiconductor) capacitor without inserting dielectric layer, are dynamically simulated to discuss the proposed NC process. The simulation results clearly reveal that the NC stage is originated from the existence of additional voltage caused by the depolarization field by surface potential of semiconductor originated from the existence of remanent polarization of ferroelectric layer, and change in the capacitance of the semiconductor during polarization switching. The different physical picture from steady-state NC and transient NC can be clearly shown.

    DOI： 10.1063/1.5075516

  • Relationship between Spontaneous Pattern Formation of Donor Molecules and Surface States on 2 Dimensional Semiconducting Materials Reviewed

    H. Ichimiya, M. Takinoue, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    Chemistry and Micro-Nano Systems,18,1,2019, 雑誌   2019

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    Kind of work：Joint Work  

  • Convection-Flow-Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface-Charge Transfer Doping of Molybdenum Disulfide Reviewed

    Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, and Daisuke Kiriya

    ChemistryOpen 雑誌   2019

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    Kind of work：Joint Work  

  • The effects of the chemical composition on the charge/spin ordering transition in YbFe2O4 epitaxial films Reviewed

    J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida and N. Fujimura

    JJAP FMA特集号 雑誌   2019

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    Kind of work：Joint Work  

  • Piezoelectric energy harvesting from AC current-carrying wire Reviewed

    Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura

    JJAP FMA特集号 雑誌   2019

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    Kind of work：Joint Work  

  • The Effect of Small Amount of Oxygen During Deposition for the Structural Change of Sputtered HfO2-based Films Reviewed

    Kenshi Takada, Yuki Saho, Takeshi Yoshimura, and Norifumi Fujimura

    JJAP 雑誌   2019

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    Kind of work：Joint Work  

  • Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules Reviewed

    H. Ichimiya, M. Takinoue, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    ACS Appl. Mater. Interfaces, 11 (17), pp 15922–15926 (2019) 雑誌   2019

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  • Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment Reviewed

    Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura and Daisuke Kiriya

    Applied Physics Express, Volume 12, Number 5,051014,1-5 (2019) 雑誌   2019

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  • Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system Reviewed

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Appl. Phys. Lett. 114, 133902,1-4 (2019) 雑誌   2019

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  • Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor Reviewed

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Sensors and Actuators A: Physical, Volume 291, 167-173,(2019) 雑誌   2019

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  • Investigation of mechanical nonlinear effect in piezoelectric MEMS vibration energy harvesters Reviewed

    M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, K. Satoh, K. Kanda, N. Fujimura

    Jpn. J. Appl. Phys.   57 ( 11S )   11UD03,1 - 11UD03,4   2018.09

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    DOI： 10.7567/JJAP.57.11UD03

  • Investigation of piezoelectric energy harvesting from human walking Reviewed

    R. Kakihara, K. Kariya, Y. Matsushita, T. Yoshimura, N. Fujimura

    Journal of Physics: Conference Series   1052 ( 1 )   2018.07

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1088/1742-6596/1052/1/012113

  • Direct piezoelectric properties of BiFeO3 epitaxial films grown by combinatorial sputtering Reviewed

    T. Yoshimura, K. Kariya, N. Okamoto, M. Aramaki, N. Fujimura

    Journal of Physics: Conference Series   1052 ( 1 )   2018.07

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    DOI： 10.1088/1742-6596/1052/1/012020

  • Systematic Study of Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Acid Treatment Reviewed

    D. Kiriya, Y. Hijikata, J. Pirillo, R. Kitaura, A. Murai, A. Ashida, T. Yoshimura, N. Fujimura

    Langmuir, 34, 10234-10249(2018). 雑誌   2018

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  • Time-resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction Reviewed

    K. Takada, T. Yoshimura, N. Fujimura

    AIP Advances 9, 025037,1-5 (2019). 雑誌   2018

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  • Characterization of piezoelectric MEMS vibration energy harvesters Reviewed

    S. Murakami, T. Yoshimura, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics 57, 11UD10 (2018), 雑誌   2018

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  • (001) Si 基板直上への Y doped HfO2薄膜のエピタキシャル成長 Reviewed

    鎌田 大輝, 高田 賢志, 吉村 武, 藤村 紀文

    材料,Vol. 67,No. 9, pp. 844-848(2018). 雑誌   2018

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  • Tuning Transition-Metal Dichalcogenide Field-EffectTransistor by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film Reviewed

    H. Ichimiya, M. Takinoue, A. Fukui, K. Miura, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    ACS Nano, 12, 10, 10123-10129(2018), 雑誌   2018

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  • The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO3 thin films Reviewed

    N. Okamoto, K. Kariya, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics Volume 57, 11S,11UF07,1-4 (2018), 雑誌   2018

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  • Direct piezoelectric response in vinylidene fluoride – trifluoroethylene copolymer films Reviewed

    Y. Matsushita, I. Kanagawa, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics, Volume 57, Number 11S ,11UG01,1-4(2018), 雑誌   2018

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  • Reaction of N,N'-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide Reviewed

    A. Fukui, K. Miura, H. Ichimiya, A. Tsurusaki, K. Kariya, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    AIP Advances 8, 055313,1-7 (2018), 雑誌   2018

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  • Fabrication and characterization of (Ba,La)SnO3 semiconducting epitaxial films on (111) and (001) SrTiO3 substrates Reviewed

    K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura

    Physica Status Solidi A,216,1700800,1-7(2018). 雑誌   2018

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  • Cerium ion doping into self-assembled Ge using three-dimensional dot structure Reviewed

    Y. Miyata, K. Ueno, T. Yoshimura, A. Ashida, N. Fujimura

    Journal of Crystal Growth   468 ( 15 )   696 - 700   2017.06

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    DOI： 10.1016/j.jcrysgro.2016.11.055

  • Fabrication and electrical properties of a (Pb, La)(Zr, Ti) O3 capacitor with pulsed laser deposited Sn-doped In2O3 bottom electrode on Al2O3 (0001) Reviewed

    Yoko Takada, Rika Tamano, Naoki Okamoto, Takeyasu Saito, Takeshi Yoshimura, Norifumi Fujimura, Koji Higuchi, Akira Kitajima

    Jpn. J. Appl. Phys.   56 ( 7S2 )   07KC02 - 07KC02   2017.06

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    DOI： 10.7567/JJAP.56.07KC02

  • High efficiency piezoelectric MEMS vibrational energy harvsters using (100) oriented BIFEO3 films Reviewed

    M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, N. Fujimura

    2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)   829 - 832   2017.01

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    DOI： 10.1109/MEMSYS.2017.7863536

  • Growth and ferroelectric properties of La and Al codoped BiFeO3 epitaxial films Reviewed

    Hirokazu Izumi,Takeshi Yoshimura,Norifumi Fujimura

    Journal of Applied Physics 121(2017), 174102 雑誌   2017

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  • Ultrafast dynamics of coherent optical phonon correlated with the antiferromagnetic transition in a hexagonal YMnO3 epitaxial film Reviewed

    Takayuki Hasegawa, Norifumi Fujimura, and Masaaki Nakayama

    Appl. Phys. Lett. 111, 192901 (2017) 雑誌   2017

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  • Development of piezoelectric bistable energy harvester based on buckled beam with axially constrained end condition for human motion Reviewed

    Ali M. Eltanany, T. Yoshimura, N. Fujimura, M. R. Ebied, and M. G. S. Ali

    Japanese Journal of Applied Physics, Volume 56, Number 10S (2017). 雑誌   2017

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  • Crystallographic Polarity Effect of ZnO on Thin Film Growth of Pentacene Reviewed

    Tatsuru Nakamura, Takahiro Nagata, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba,Toyohiro Chikyow, Norifumi Fujimura, and　Yutaka Wakayama

    Japanese Journal of Applied Physics, Volume 56, Number 4S (2017) 雑誌   2017

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  • Photoelectron spectroscopic study on monolayer pentacene thin film/ polar ZnO single crystal hybrid interface Reviewed

    Takahiro Nagata, Tatsuru Nakamura, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, and Yutaka Wakayama

    Applied Physics Express, 10(2017), 025702 1-4 雑誌   2017

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  • Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3 Reviewed

    John D. Baniecki, Takashi Yamazaki, Dan Ricinschi, Quentin Van Overmeere, Hiroyuki Aso, Yusuke Miyata, Hiroaki Yamada, Norifumi Fujimura, Ronald Maran, Toshihisa Anazawa, Nagarajan Valanoor, and Yoshihiko Imanaka

    Scientific Reports, 7 (2017), 41725 1-12, 雑誌   2017

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  • Origin of the photoinduced current of strongly correlated YMnO3 ferroelectric epitaxial films Reviewed

    Kohei Miura, Lejun Zhang, Daisuke Kiriya, Atsushi Ashida, Takeshi Yoshimura and Norifumi Fujimura

    Japanese Journal of Applied Physics, 56(2017), Number 10S 雑誌   2017

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  • Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure Reviewed

    Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara, Norifumi Fujimura

    Thin Solid Films   616   415 - 418   2016.10

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    DOI： 10.1016/j.tsf.2016.09.009

  • Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below Reviewed

    Norifumi Fujimura, Takeshi Yoshimura

    J. Appl. Phys. 119 (2016), 175302 1-6 雑誌   2016

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  • Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, ply(vinylidene fluoride-trifluoroethylene), as a gate dielectric Reviewed

    Yusuke Miyata, Takeshi Yoshimura, Atsushi Ashida, and Norifumi Fujimura

    Japanese Journal of Applied Physics 55(2016), 04EE04 1-4 雑誌   2016

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  • Reliability of the properties of (Pb,La)(Zr,Ti)O3 capacitors with non–noble metal oxide electrodes stored in an H2 atmosphere Reviewed

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido

    MRS Advances 1(2016) 369−374 雑誌   2016

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  • Al: ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb, La)(Zr,Ti)O3 capacitors Reviewed

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima

    Electronics Letters 52(2016), 230−232 雑誌   2016

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  • Comparative Study of Hydrogen - and Deuterium - induced Degradation of Ferroelectric (Pb,La)(Zr,Ti)O3 Capacitors Using Time of Flight Secondary Ion Measurement Reviewed

    Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido

    IEEE Trans. Ultrason. Ferroelectr. Freq. Control, 63(2016), 1668-1673 雑誌   2016

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  • Comparative Study of Ferroelectric (K,Na)NbO3 Thin Films Pulsed Laser Deposition on Platinum Substrates with Different Orientation Reviewed

    R. Tamano, Y. Takada, N. Okamoto. T. Saito, K. Higuchi, A. Kitajima, T. Yoshimura, and N. Fujimura

    Proc. 2016 IEEE ISAF/ECAPD/PFM(2016), 1−4 雑誌   2016

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  • Evaluatioion of Deuterium ion Profile in (Pb,La)(Zr,Ti)O3 Capacitors Structures with Conductive Oxide Top Electrode by Time of Flight Secondary Ion Mass Spectrometry Reviewed

    Y. Takada, R. Tamano, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima and R. Shishido

    Proc. 2016 IEEE ISAF/ECAPD/PFM(2016), 1−4 雑誌   2016

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  • Fabrication of Doped Pb(Zr,Ti)O3 Capacitors on Pt Substrates with Different Orientations Reviewed

    R. Tamano, T. Amano, Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima

    Electronics Letters, 52(2016), 1399-1401 雑誌   2016

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  • Ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors employing Al-doped ZnO top electrodes prepared by pulsed laser deposition under different oxygen pressures Reviewed

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima

    Japanese Journal of Applied Physics (2016), 55, 06JB04. 雑誌   2016

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  • Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition Reviewed

    Atsushi Ashida, Shunsuke Sato, Takeshi Yoshimura, Norifumi Fujimura,

    Journal of Crystal Growth(2016) 雑誌   2016

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  • High efficiency piezoelectric MEMS vibration energy harvesters using (100) oriented BiFeO3 Films Reviewed

    M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, and N. Fujimura

    Proc. of the 30th IEEE International Conference on Micro Electro Mechanical Systems (2016), 829-832 雑誌   2016

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  • Direct measurements of electrocaloric effect in ferroelectrics using thin-film thermocouples Reviewed

    Yuji Matsushita, Atsushi Nochida, Takeshi Yoshimura, and Norifumi Fujimura

    Jpn. J. Appl. Phys. 55(2016), 10TB04 1-4 雑誌   2016

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  • Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films Reviewed

    Jin Hong Choi, Takeshi Yoshimura, and Norifumi Fujimura

    Jpn. J. Appl. Phys. 55(2016), 10TA17 1-4 雑誌   2016

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  • Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system Reviewed

    Masaaki Aramaki, Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura

    Jpn. J. Appl. Phys. 55(2016), 10TA16 1-5 雑誌   2016

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  • Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films Reviewed

    Y. Miyata, K. Ueno, Y. Togawa, T. Yoshimura, A. Ashida, and N. Fujimura

    Appl. Phys. Lett. 109 (2016), 112101 1-4 雑誌   2016

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  • (111)SrTiO3基板上への(Ba,La)SnO3薄膜の結晶成長 Reviewed

    三浦 光平, 樫本 涼,吉 村 武, 芦田 淳, 藤村 紀文

    材料 65 (2016), 638-641 雑誌   2016

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  • Lowering the growth temperature of strongly-correlated YbFe2O4 thin films prepared by pulsed laser deposition Reviewed

    Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara and Norifumi Fujimura

    Thin Solid Films 614(2016), 44-46 雑誌   2016

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  • Enhancement of piezoelectric properties of BiFeO3 films for vibration energy harvesting Reviewed

    T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami

    Proc. of the Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌   2015.11

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  • Direct measurement of electrocaloric effect in barium titanate thin films Reviewed

    T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami

    Proc. of The Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌   2015.11

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  • Piezoelectric MEMS vibrational energy harvester using BiFeO3 films Reviewed

    T. Yoshimura, S. Murakami, K. Kariya, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   2015.11

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  • Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple Reviewed

    Y. Matsushita, T. Yoshimura, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   2015.11

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  • Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking Reviewed

    Ali M. Eltanany, T. Yoshimura, N. Fujimura, Nour Z. Elsayed, Mohamed R. Ebied and Mohamed G. S. Ali

    Japanese Journal of Applied Physics 雑誌 応用物理学会   54   2015.09

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  • Growth and characterization of (1 − x)BiFeO3–x(Bi0.5,K0.5)TiO3 thin films Reviewed

    Jin Hong Choi, Takeshi Yoshimura and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌   54   2015.09

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  • Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system Reviewed

    Yusuke Miyata, Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura

    J. Crystal Growth 雑誌 Elsevier   425   158 - 161   2015.09

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  • Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures Reviewed

    H. Yamada, T. Yoshimura and N. Fujimura

    Journal of Applied Physics 雑誌   117   2015.06

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  • Interface energetics and atomic structure of epitaxial La1-xSrxCoO3 on Nb:SrTiO3 Reviewed

    Quentin Van Overmeere,John D. Baniecki,Takashi Yamazaki,Dan Ricinschi,Hiroyuki Aso,Yusuke Miyata,Hiroaki Yamada,Norifumi Fujimura,Yuji Kataoka,Yoshihiko Imanaka

    Appl. Phys. Lett.   106   241602 - 241602   2015.06

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    DOI： 10.1063/1.4922880

  • The orientation controlled (Pb,La)(Zr,Ti)O3capacitor for improved reliabilities Reviewed

    T. Saito, T. Amano, Y. Takada, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima

    2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on ISIF/PFM   226 - 229   2015.05

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    DOI： 10.1109/ISAF.2015.7172712

  • Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors Reviewed

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima and H. Iwai

    Japanese Journal of Applied Physics   54   05ED03,1 - 05ED03,6   2015.04

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    DOI： 10.7567/JJAP.54.05ED03

  • Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top slscrtodes in PbLaZrTiOx capacitors Reviewed

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    International Journal Material Reserch 雑誌   106   83 - 87   2015.04

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  • The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties Reviewed

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    Material Research Soc. Simp. Proseedings 雑誌   1729   93 - 98   2015.04

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    DOI： 10.1557/opl.2015.263

  • Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple Reviewed

    Y. Matsushita, T. Yoshimura, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   2015

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  • Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing Reviewed

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, H. Iwai, and R. Shishido

    Proc. 2015 IEEE ISAF/ISIF/PFM   163 - 166   2015

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    DOI： 10.1109/ISAF.2015.7172695

  • The output power of piezoelectric MEMS vibration energy harvesters under random oscillations

    K Kariya, T Yoshimura, S Murakami and N Fujimura

    Journal of Physics: Conference Series 雑誌   557   2014.11

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  • Enhancement of piezoelectric properties of (100)-orientated BiFeO3 films on (100)LaNiO3/Si Reviewed

    Kento Kariya, Takeshi Yoshimura, Shuichi Murakami and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   53 ( 9ｓ )   2014.09

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  • Piezoelectric properties of (100) orientated BiFeO3 thin films on LaNiO3 Reviewed

    Kento Kariya, Takeshi Yoshimura, Shuichi Murakami and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   53 ( 8S3 )   2014.08

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  • Improved reliability properties of (Pb,La) (Zr,Ti)O3 ferroelectric capacitors by thin aluminium-doped zinc oxide buffer layer Reviewed

    Y.Takada, T.Tsuji, N.Okamoto, T.Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima

    Electronics Letters IEEE   50 ( 11 )   799 - 801   2014.05

  • Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition Reviewed

    T. Nakamura, T. Yoshimura, A. Ashida, N. Fujimura

    Thin Solid Films Elsevier   559   88 - 91   2014.05

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  • Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer Reviewed

    Yoko Takada,Toru Tsuji,Naoki Okamoto,Takeyasu Saito,Kazuo Kondo,Takeshi Yoshimura,Norifumi Fujimura,Koji Higuchi,Akira Kitajima,Akihiro Oshima

    Materials in Electronics Journal of Materials Science   925 ( 5 )   2155 - 2161   2014.05

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  • Correlation between the intra-atomic Mn3+ photoluminescence and antiferromagnetic transition in an YMnO3 epitaxial film Reviewed

    Masaaki Nakayama, Yoshiaki Furukawa, Kazuhiro Maeda, Takeshi Yoshimura, Hiroshi Uga, Norifumi Fujimura

    Applied Physics Express The Japan Society of Applied Physics   7   2014.02

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  • Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, T. Yoshimura, K. Wakazono,A. Ashida,N. Fujimura

    Thin Solid Films Elsevier   550   738 - 741   2014.01

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  • Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO3 ferroelectric film Reviewed

    S Murakami, T Yoshimura, K Satoh, K Wakazono, K Kariya and N Fujimura

    Journal of Physics:Conference Series Elsevier   476   2013.12

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  • Enhancement of Direct Piezoelectric Properties of Domain-Engineered(100)BiFeO3 Films Reviewed

    Takeshi Yshimura,Katsuya Ujimoto,Yusaku Kawahara,keisuke Wakazono,Kento Kariya,Norifumi Fujimura,Syuichi Murakami

    Japanese Journal of Applied Physics The Japan Society of Applied Physics   52   2013.09

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  • Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes Reviewed

    T. Saito, Y. Takada, T. Tsuji, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 IEEE   6748734   205 - 207   2013.07

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  • Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes Reviewed

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 IEEE   6748710   360 - 362   2013.07

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  • Piezoelectric vibrational energy harvester using lead-free ferroelectric BiFeO3 films Reviewed

    T. Yoshimura, S. Murakami, K. Wakazono, K. Kariya, N. Fujimura

    Appl. Phys. Express The Japan Society of Applied Physics   6 ( 5 )   051501 1 - 4   2013.05

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  • ナノチャネルを有する強誘電体ゲート薄膜トランジスタの作製とその電気特性評価 Reviewed

    野村侑平，吉村武，藤村紀文

    Journal of the Vacuum Society of Japan 日本真空学会   56 ( 5 )   172 - 175   2013.05

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  • Effects of La substitution for BiFeO3 epitaxial thin films Reviewed

    K. Wakazono, Y. Kawahara, K. Ujimoto, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   62 ( 7 )   1069 - 1072   2013.04

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    Kind of work：Joint Work  

  • Effect of the annealing temperature of P(VDF/TrFE) thin films on their ferroelectric properties Reviewed

    Y. Yachi, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   62 ( 7 )   1065 - 1068   2013.04

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  • 有機強誘電体を用いた磁性半導体Si:Ce薄膜の電界効果 Reviewed

    宮田祐輔，高田浩史，奥山祥孝，吉村武，藤村紀文

    Journal of the Vacuum Society of Japan 日本真空学会   ( 56 )   136 - 138   2013.04

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  • Effect of target surface microstructure on morphological and electrical properties of pulsed-laser-deposited BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   52 ( 4 )   045803 1 - 5   2013.04

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  • Electrical properties of sol-gel derived PbLaZrTiOx capacitors with nonnoble metal oxide top electrodes Reviewed

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    Electrochemical Society Transactions The Electrochemical Society   50 ( 34 )   43 - 48   2013.03

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  • Orientation control of ZnO films deposited using nonequilibrium atmospheric pressure N2/O2 plasma Reviewed

    Y. Nose, T. Nakamura, T. Yoshimura, A. Ashida, T. Uehara, N. Fujimura

    Jpn. J. Appl. Phys. Special Issue The Japan Society of Applied Physics   52 ( 1 )   01AC03 1 - 3   2013.01

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  • Investigation of gas sensing characteristics of TiO2 nanotube channel field-effect transistor Reviewed

    M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   51 ( 11 )   11PE10 1 - 3   2012.11

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  • Effect of ferroelectric polarization on carrier transport in controlled polarization type ferroelectric gate field-effect transistors with P(VDF-TeFE)/ZnO heterostructure Reviewed

    H. Yamada, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   51 ( 11 )   11PB01 1 - 4   2012.11

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  • Control of crystal structure of BiFeO3 epitaxial thin films by the growth condition and piezoelectric properties Reviewed

    Y. Kawahara, K. Ujimoto, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys.（Ferroelectric Materials Their Applications） The Japan Society of Applied Physics   51 ( 9 )   09LB04 1 - 5   2012.09

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  • Low temperature growth of ZnO thin films by non-equilibrium atmospheric pressure N2/O2 plasma and the growth morphology of the films Reviewed

    Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara, Norifumi Fujimura

    Journal of the Society of Materials Science, Japan   61 ( 9 )   756 - 759   2012.09

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    DOI： 10.2472/jsms.61.756

  • Electric Conduction of TiO2 Nanotube Field Effect Transistor Fabricated by Dielectrophoresis Reviewed

    Journal of the Society of Materials Science, Japan   61 ( 9 )   766 - 770   2012.09

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    DOI： 10.2472/jsms.61.766

  • Growth temperature and thickness dependences of crystal and micro domain structures of BiFeO3 epitaxial films Reviewed

    Katsuya Ujimoto, Takeshi Yoshimura, Norifumi Fujimura

    Proceedings of ISAF-ECAPD-PFM 2012   1 - 3   2012.07

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    Publishing type：Research paper (international conference proceedings)   Kind of work：Joint Work   International / domestic magazine：International journal  

  • Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel Reviewed

    H. Yamada, T. Yoshimura, N. Fujimura

    2012 MRS Spring Meeting Proceedings MRS   2012.04

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  • Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel Reviewed

    H. Yamada, T. Yoshimura, N. Fujimura

    MRS Online Proceedings Library   1430   19 - 24   2012.04

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    Publishing type：Research paper (international conference proceedings)   Kind of work：Joint Work   International / domestic magazine：International journal  

  • Direct piezoelectric properties of (100) and (111) BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura

    Appl. Phys. Lett. American Institute of Physics   100   102901 1 - 3   2012.03

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  • Local pH control by electrolysis for ZnO epitaxial deposition on a Pt cathode Reviewed

    S. Yagi, Y. Kondo, Y. Satake, A. Ashida, N. Fujimura

    Electrochimica Acta Elsevier   62   2012.02

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  • The Difference of Surface Treatment Method for ZnO Single Crystals and the Epitaxial Growth Process Occurred by the Difference in the Surface Polarity Reviewed

    Journal of the Society of Materials Science, Japan   60 ( 11 )   983 - 987   2011.11

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    DOI： 10.2472/jsms.60.983

  • Direct piezoelectricity of PZT films and application to vibration energy harvesting Reviewed

    H. Miyabuchi, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   59 ( 3 )   2524 - 2527   2011.09

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  • Characterization of field effect transistor with TiO2 nanotube channel fabricated by dielectrophoresis Reviewed

    M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N.Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   082019 1 - 4   2011.09

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  • Characterization of direct piezoelectric properties for vibration energy harvesting Reviewed

    T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida, N. Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   092026 1 - 4   2011.09

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  • ZnO crystal growth on microelectrode by electrochemical deposition method Reviewed

    Y. Kondo, A. Ashida, N. Nouzu, N. Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   092043 1 - 4   2011.09

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  • Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, H. Izumi, T. Yoshimura, A. Ashida, N. Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   092064 1 - 4   2011.09

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  • Characterization of direct piezoelectric effect in 31 and 33 modes for application to vibration energy harvester Reviewed

    H. Miyabuchi, T. Yoshimura, S. Murakami, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 9 )   2011.09

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  • Effect of ferroelectric polarization domain structure on electronic transport property of ferroelectric ZnO heterostructure Reviewed

    H. Yamada, T. Fukushima, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 9 )   2011.09

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  • Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma Reviewed

    R. Hayakawa, M. Yoshida, K. Ide, Y. Yamashita, H. Yoshikawa, K. Kobayashi, S. Kunugi, T. Uehara, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   110   2011.09

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  • Ce-induced reconstruction of Si(001) surface structures Reviewed

    D. Shindo, S. Sakurai, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 6 )   065701 1 - 4   2011.06

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  • Initial growth process in electrochemical deposition of ZnO Reviewed

    A. Ashida, N. Nouzu, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 5 )   05FB12 1 - 3   2011.05

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  • Impedance analysis of controlled-polarization-type ferroelectric-gate thin film transistor using resistor-capacitor lumped constant circuit Reviewed

    T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 4 )   04DD16 1 - 4   2011.04

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  • Electronic transport property of a YbMnO3/ZnO heterostructure Reviewed

    H. Yamada, T. Fukushima, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   58 ( 4 )   792 - 796   2011.04

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  • Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration Reviewed

    T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima, A. Oshima

    Electronics Letters ＩＥＴ   47 ( 8 )   486 - 487   2011.04

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  • Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films Reviewed

    T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Crystal Growth Elsevier   318   516 - 518   2011.03

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  • 酸化亜鉛の最先端技術と将来 Reviewed

    藤村紀文

    酸化亜鉛の最先端技術と将来 シーエムシー出版   2011.01

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  • Fabrication and magneto-transport properties of Zn0.88-xMgxMn0.12O/ZnO heterostructures grown on ZnO single-crystal substrates Reviewed

    K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura

    Advances in Science and Technology Trans Tech Publications Inc.   75   2010.10

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  • Local piezoelectric and conduction properties of BiFeO3 epitaxial thin films Reviewed

    K. Ujimoto, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys., Ferroelectric Materials Their Applications The Japan Society of Applied Physics   49 ( 9 )   2010.09

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  • 定電流電気化学堆積法による酸化亜鉛薄膜の作製 Reviewed

    芦田淳, 藤村紀文

    材料   59 ( 9 )   681 - 685   2010.09

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    DOI： 10.2472/jsms.59.681

  • Ferroelectric properties of magnetoferroelectric YMnO3 epitaxial films at around the neel temperature Reviewed

    T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura

    Key Engineering Materials Trans Tech Publications Inc.   445   144 - 147   2010.07

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  • Dielectric behavior of YMnO3 epitaxial thin film at around magnetic phase transition temperature Reviewed

    K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura

    Advances in Science and Technology Trans Tech Publications Inc.   67   176 - 181   2010.06

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  • The effects of aluminum doping for the magnetotransport property of Si:Ce thin films Reviewed

    D. Shindo, K. Fujii, T. Terao, S. Sakurai, S. Mori, K. Kurushima, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   107 ( 9 )   09C308 1 - 3   2010.05

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  • Direct piezoelectric properties of Mn-doped ZnO epitaxial films Reviewed

    T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   49 ( 2 )   021501 1 - 3   2010.03

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  • Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films Reviewed

    Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   3097 - 3100   2010.03

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  • Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition Reviewed

    T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   2971 - 2974   2010.03

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  • Control of cathodic potential for deposition of ZnO by constant-current electrochemical method Reviewed

    N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   2957 - 2960   2010.03

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  • Analysis of carrier modulation in channel of　ferroelectric-gate transistors having polar semiconductor Reviewed

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   3026 - 3029   2010.03

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  • Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films Reviewed

    Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura

    Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology Elsevier   84 ( 5 )   618 - 621   2009.12

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  • Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method Reviewed

    Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoro, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura

    Electrochemical Society Transactions   25 ( 8 )   693 - 698   2009.10（ eISSN:1938-6737 ）

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1149/1.3207657

    Other URL： https://iopscience.iop.org/article/10.1149/1.3207657/pdf

  • Polarization switching behavior of YMnO3 thin film at around magnetic phase transition temperature Reviewed

    K. Maeda, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   48 ( 9 )   2009.09

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  • Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Physical Review B the American Physical Society   80 ( 12 )   2009.09

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  • Electron transport properties of Zn0.88Mn0.12O/ZnO modulation-doped heterostructures Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Vacuum Science & Technology B AIP Publishing LLC   27 ( 3 )   1760 - 1764   2009.05

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  • Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction Reviewed

    T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   48 ( 3 )   033003 1 - 5   2009.03

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  • Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura

    J. Crystal Growth Elsevier   311 ( 4 )   1117 - 1122   2009.02

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  • Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering Reviewed

    H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Yoshimura, N. Fujimura

    Jounal of Physics-Condensed Matter Elsevier   21 ( 6 )   2009.02

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  • Electrical characteristics of controlled-polarization-type ferroelectric-gate field-effect transistor Reviewed

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   47 ( 12 )   8874 - 8879   2008.12

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  • Effects of oxygen annealing on dielectric properties of LuFeCuO4 Reviewed

    Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   47 ( 11 )   8464 - 8467   2008.11

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  • Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films Reviewed

    S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura, N. Fujimura

    Applied Surface Science Elsevier   254 ( 19 )   6248 - 6251   2008.07

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  • Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films Elsevier   516 ( 17 )   5785 - 5789   2008.07

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  • Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si Reviewed

    D. Shindo, T. Yoshimura, N. Fujimura

    Applied Surface Science Elsevier   254 ( 19 )   6218 - 6221   2008.07

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  • Electro-optic property of ZnO:Mn epitaxial films Reviewed

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Physica Status Solidi (c) John Wiley & Sons, Inc.   5   3110 - 3112   2008.05

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  • Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films Reviewed

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   103 ( 9 )   2008.05

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  • Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films Reviewed

    K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control IEEE   55 ( 5 )   1056 - 1060   2008.05

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    Publishing type：Research paper (international conference proceedings)   Kind of work：Joint Work  

    DOI： 10.1109/TUFFC.2008.756

  • Effects of spontaneous and piezoelectric polarizations on carrier confinement at the Zn0.88Mn0.12O/ZnO interface Reviewed

    K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura, N. Fujimura

    Physica Status Solidi (c） John Wiley & Sons, Inc.   5   3107 - 3109   2008.05

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  • Spin-dependent transport in a ZnMnO/ZnO heterostructure Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   103 ( 7 )   2008.04

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  • Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (000(1)over-bar) single-crystal substrates(2008) Reviewed

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   103 ( 4 )   2008.02

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  • Multiferroic behaviors of hexagonal YMnO3 and YbMnO3 epitaxial films Reviewed

    N. Fujimura, K. Maeda,　K. Fukae, T. Yoshimura

    Material Research Soc. Fall Meeting MRS   2007.12

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  • Influence of Antiferromagnetic Ordering on Ferroelectric Polarization Switching of YMnO3 Epitaxial Thin Films Reviewed

    55 ( 12 )   2641 - 2644   2007.12

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  • Effect of Bi substitution on the magnetic and dielectric properties of epitaxially-grown BaFe0.3Zr0.7O3-δ thin films on SrTiO3 substrates Reviewed

    T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda, K. Morii

    Journal of Physics ａｎｄ Chemistry of Solids Elsevier   68 ( 8 )   1515 - 1521   2007.09

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  • Raman scattering studies on multiferroic YMnO3 Reviewed

    H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura, N. Fujimura

    Journal of Physics: Condens Matter Elsevier   19 ( 36 )   2007.09

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  • Low temperature growth of Si:Ce thin films with high crystallinity and uniform distribution of Ce grown by solid-source molecular beam epitaxy Reviewed

    T. Terao, Y. Nishimura, D. Shindo, N. Fujimura

    J. Crystal Growth   307 ( 1 )   30 - 34   2007.09

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1016/j.jcrysgro.2007.06.009

  • Spin-coupled phonons in multiferroic YbMnO3 epitaxial films by raman scattering Reviewed

    H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura, N. Fujimura

    PHONONS 2007 Journal of Physics: Conference Series Elsevier   92   2007.08

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  • Magnetic frustration behavior of ferroelectric ferromagnet YbMnO3 epitaxial films Reviewed

    N. Fujimura, T. Takahashi T. Yoshimura, A. Ashida

    J. Appl. Phys. AIP Publishing LLC   101 ( 9 )   2007.05

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  • Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate Reviewed

    K. Masuko, A. Ashida,T. Yoshimura, N. Fujimura

    Journal of Magnetism and Magnetic Materials Elsevier   310   e711 - e713   2007.03

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  • Magnetic properties of low temperature grown Si:Ce thin films on (001) Si substrate Reviewed

    T. Terao, Y. Nishimura, D. Shindo, A. Ashida, N. Fujimura

    Journal of Magnetism and Magnetic Materials Elsevier   310   e726 - e728   2007.03

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  • The comparison of the growth models of silicon nitride ultra-thin films fabricated using atmospheric pressure plasma and radio frequency plasma Reviewed

    M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara

    J. Appl. Phys. AIP Publishing LLC   101 ( 2 )   2007.01

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  • Multiferroic behaviors of YMnO3 and YbMnO3 epitaxial films (invided paper) Reviewed

    N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida, T. Yoshimura

    Philosophical Magazine Letters Taylor&Francis   87 ( 41702 )   193 - 201   2007.01

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  • Effect of additional oxygen for the formation of silicon oxynitride using nitrogen plasma generated near atmospheric pressure Reviewed

    R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   45 ( 12 )   9025 - 9028   2006.12

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  • Magnetic properties of Er,O-codoped GaAs at low temperature Reviewed

    S. Takemoto, T. Terao, Y. Terai, M. Yoshida, A. Koizumi, H. Ohta, Y. Takeda, N. Fujimura, Y. Fujiwara

    physica status solidi c   3 ( 12 )   4082 - 4085   2006.12

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work   International / domestic magazine：International journal  

    DOI： 10.1002/pssc.200672878

  • Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure Reviewed

    R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa, Y. Teraoka

    J. Appl. Phys. AIP Publishing LLC   100 ( 7 )   2006.10

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    Kind of work：Joint Work  

  • Single-wall carbon nanotube field efect transistors with non-volatile memory operation Reviewed

    T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y. Nakayama

    Jpn. J. Appl. Phys. Part 2, Letters & express letters The Japan Society of Applied Physics   45 ( 37-41 )   L1036 - L1038   2006.10

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    Kind of work：Joint Work  

  • Growth and ferromagnetic properties of ferroelectric YbMnO3 thin films Reviewed

    T. Takahashi, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   45 ( 9B )   7329 - 7331   2006.09

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  • Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition Reviewed

    M. Nakayama, H. Tanaka, K. Masuko, T. Fukushima, A. Ashida, N. Fujimura

    Applied Phys. Letters American Institute of Physics   88 ( 24 )   2006.06

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    Kind of work：Joint Work  

  • Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure Reviewed

    R.Hayakawa, T.Yoshimura, A.Ashida, T.Uehara, N.Fujimura

    Thin Solid Films Elsevier   506-507   423 - 426   2006.04

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    Kind of work：Joint Work  

  • Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering Reviewed

    A. Ashida, T. Nagata, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   99 ( 1 )   2006.01

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  • Ferromagnetic and dielectric behavior of Mn-doped BaCoO3 Reviewed

    T. Inoue, T. Matsui, N. Fujimura , H. Tsuda, K. Morii

    IEEE Transactions on Magnetics IEEE   41 ( 10 )   3496 - 3498   2005.10

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  • Preferred Orientation and Elastic Strain of Epitaxial and Non-Epitaxial ZnOx Thin Films. Reviewed

    N.Fujimura, T.Nishihara and T.Ito

    Symposium Proc. of Materials Research Society (1990)   244   2005.10

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    Publishing type：Research paper (international conference proceedings)   Kind of work：Joint Work   International / domestic magazine：International journal  

  • Low-temperature growth and characterization of epitaxial YMnO3/Y2O3/Si MFIS capacitors with thinner insulator layer Reviewed

    K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   44 ( 9B )   6977 - 6980   2005.09

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  • Enhancement of ferromagnetic ordering in dielectric BaFe1-xZrxO3 (x=0.5-0.8) single crystalline films by pulsed laser-beam deposition Reviewed

    T. Matsui, E.. Taketani, N. Fujimura, H. Tsuda, K. Morii

    J. Appl. Phys. AIP Publishing LLC   97 ( 10 )   2005.05

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  • Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition Reviewed

    Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   97 ( 8 )   2005.04

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  • Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution Reviewed

    T. Matsui, E..Taketani, H. Tuda, N. Fujimura, K. Morii

    Appl. Phys. Lett.. American Institute of Physics   86 ( 8 )   2005.02

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  • Analysis of nitrogen plasma generated by a pulsed plasma sysytem near atmospheric pressure Reviewed

    R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   96 ( 11 )   6094 - 6096   2004.12

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  • Interface characteristics of (Zn,Mn)O/ZnO grown on ZnO substrate Reviewed

    A. Ashida, K. Masuko, T. Edahiro, T. Oshio, N. Fujimura

    J. Crystal Growth Elsevier   275   2004.12

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  • Formation of silicon oxynitride films with low leakage current using N2/O2 plasma near atomospheric pressure Reviewed

    R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   43 ( 11B )   7853 - 7856   2004.11

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  • Synthesis of Bi(FexAl1-x)O3 thin films by pulsed laser deposition and its structural characterization Reviewed

    M. Okada, T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   43 ( 9B )   6609 - 6612   2004.09

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  • Pulsed-laser-deposited YMnO3 epitaxial films with square polarization-electric field hysteresis loop and low-temperature growth Reviewed

    N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   43 ( 9B )   6613 - 6616   2004.09

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  • Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO3 thin films on (100)SrTiO3 substrates Reviewed

    E. Taketani, T. Matsui, N. Fujimura, K. Morii

    IEEE Transactions on Magnetics Part 2 IEEE   40 ( 4 )   2736 - 2738   2004.07

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  • Electro-optic effect in ZnO:Mn thin films Reviewed

    T. Nagata, A. Ashida, N. Fujimura, T. Ito

    Journal of Alloys and Compounds Elsevier   371   157 - 159   2004.05

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  • The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering Reviewed

    T. Nagata, A. Ashida, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   95 ( 8 )   3923 - 3927   2004.04

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  • P-E measurements for ferroelectric gate capacitors Reviewed

    T. Yoshimura, N. Fujimura

    Integrated Ferroelectrics Taylor&Francis   61   59 - 64   2004.02

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  • Optical propagation loss of ZnO films grown on sapphire Reviewed

    A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   95 ( 4 )   1673 - 1676   2004.02

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  • Polarization hysteresis loops of ferroelectric gate capacitors measured by Sawyer-tower circuit Reviewed

    T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   42 ( 9B )   6011 - 6014   2003.09

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  • Improvement of surface morphology and the dielectric property of YMnO3 films Reviewed

    H. Sakata, D. Ito, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   42 ( 9B )   6003 - 6006   2003.09

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  • Influence of schottky and poole-frenkel emission on the retention property of YMnO3 based metal/ferroelectric/insulator/semiconductor capacitors Reviewed

    D. Ito, N. Fujimura, T. Yoshimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   94 ( 6 )   4036 - 4041   2003.09

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  • Effect of carrier for magnetic and magnetotransport properties of Si:Ce films Reviewed

    T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   7679 - 7681   2003.05

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  • Formation of two-dimensional electron gas and the magneto-transport behavior of ZnMnO/ZnO heterostructure Reviewed

    T. Edahiro, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   7673 - 7675   2003.05

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  • Magnetic properties of highly resistive BaFeO3 thin films epitaxially grown on SrTiO3 single crystal substrates Reviewed

    T. Matsui, E. Taketani, N. Fujimura, T. Ito, K. Morii

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   6993 - 6995   2003.05

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    Kind of work：Joint Work  

  • Ferromagnetic and ferroelectric behaviors of A site substituted YMnO3-based epitaxial thin films Reviewed

    N. Fujimura, D. Ito, H. Sakata, T. Yoshimura, T. Yokota, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   6990 - 6992   2003.05

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  • Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field effect transistors Reviewed

    D. Ito, N. Fujimura, T. Yoshimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 9 )   5563 - 5567   2003.05

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  • Magnetic and dielectric properties of epitaxially grown BaFeO3 thin films on SrTiO3 single crystal substrates Reviewed

    T. Matsui, H. Tanaka, E. Taketani, N. Fujimura, T. Ito, K. Morii

    J. Korean Phys. Soc. Korean Phys. Soc.   42   S1378 - S1381   2003.04

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  • Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films Reviewed

    T. Yokota, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 7 )   4045 - 4048   2003.04

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  • The effect of leakage current on the retention property of YMnO3 based MFIS capacitor Reviewed

    D. Ito, N. Fujimura, T. Ito

    Integrated Ferroelectrics Taylor&Francis   49   41 - 49   2002.12

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    Kind of work：Joint Work  

  • Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor: Si1-xCex films Reviewed

    T, Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito

    Appl. Phys. Lett.. American Institute of Physics   81 ( 21 )   4023 - 4025   2002.11

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    Kind of work：Joint Work  

  • Electro-optic effect in epitaxial ZnO:Mn thin films Reviewed

    T. Nagata, A. Ashida, Y. Takagi, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   41 ( 11B )   6916 - 6918   2002.11

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  • Crystal growth and interface characterization of dielectric BaZrO3 thin films on Si substrates Reviewed

    T. Matsui, Y. Kitano, N. Fujimura, K. Morii, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   41 ( 11B )   6639 - 6642   2002.11

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    Kind of work：Joint Work  

  • Structural, dielectric and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates Reviewed

    T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, K. Morii

    Appl. Phys. Lett. American Institute of Physics   81 ( 15 )   2764 - 2766   2002.10

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    Kind of work：Joint Work  

  • Thin film crystal growth of BaZrO3 at low oxygen partial pressure Reviewed

    Y. Kitano, T. Matsui, N. Fujimura, K. Morii, T. Ito

    Journal of Crystal Growth Elsevier   243 ( 1 )   164 - 169   2002.08

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    Kind of work：Joint Work  

  • Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy Reviewed

    T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito

    J. Appl. Phys. AIP Publishing LLC   91 ( 10 )   7905 - 7907   2002.05

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    Kind of work：Joint Work  

  • Electro-optic property of ZnO:X (X=Li,Mg) thin films Reviewed

    T. Nagata, A. Ashida, N. Fujimura, T. Ito

    Journal of Crystal Growth Elsevier   237   533 - 537   2002.04

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  • Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by Pulsed laser deposition Reviewed

    K. Kakuno, D. Ito, N. Fujimura, T. Matsui, T. Ito

    Journal of Crystal Growth Elsevier   237   487 - 491   2002.04

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  • Retention property analysis of epitaxially grown YMnO3/Y2O3/Si capacitor Reviewed

    D. Ito, N. Fujimura, K. Kakuno, T. Ito

    Ferroelectrics Taylor&Francis   271   1677 - 1682   2002.04

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    Kind of work：Joint Work  

  • The progress of the YMnO3/Y2O3/Si system for ferroelectric gate field effect transistor Reviewed

    N. Fujimura, D. Ito, T. Ito

    Ferroelectrics Taylor&Francis   271   1819 - 1824   2002.01

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    Kind of work：Joint Work  

  • Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces Reviewed

    T. Yamaguchi, H. Kato, N. Fujimura, T. Ito

    Thin Solid Films Elsevier   396 ( 41641 )   119 - 125   2001.09

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    Kind of work：Joint Work  

  • Ferroelectricity in Li-doped ZnO:X thin films and the application for the optical switching devices Reviewed

    T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   40 ( 9B )   5615 - 5618   2001.09

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    Kind of work：Joint Work  

  • Detailed Structural Analysis of Ce Doped Si Thin Films Reviewed

    T. Yokota, N. Fujimura, Y. Morinaga and T. Ito

    Physica E 雑誌   10   237 - 241   2001.05

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  • Magnetic properties of Er and Er,O-doped GaAs grown by organometallic vapor phase epitaxy Reviewed

    Y. Morinaga, T. Edahiro, N. Fujimura, T. Ito, T. Koide, Y. Fujiwara, Y. Takeda

    Physica E Elsevier   10 ( 41642 )   391 - 394   2001.05

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  • Magnetic and magneto-transport properties of ZnO:Ni films Reviewed

    T. Wakano, N. Fujimura, N. Abe, Y. Morinaga, A. Ashida, T. Ito

    Physica E Elsevier   10 ( 41642 )   260 - 264   2001.05

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  • Preparation and ferroelectric properties of YMnO3 thin films with c-axis preferred orientation by the sol-gel method Reviewed

    K. Tadanaga, H. Kitahata, T. minami, N. Fujimura, T. Ito

    J. Sol-Gel Sci. tech. Springer   19 ( 41642 )   589 - 593   2000.12

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  • Initial stage of film growth of pulsed laser deposited YMnO3 Reviewed

    D. Ito, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   39 ( 9B )   5525 - 5527   2000.09

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    Kind of work：Joint Work  

  • Influence of reactive ion etching damage on the schottky barrier hight of Ti/p-Si interface Reviewed

    N. Fujimura, T. Yamaguchi, H.Kato, T. Ito

    Applied Surface Science Elsevier   159   186 - 190   2000.06

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  • Improvement of Y2O3/Si interface for FeRAM application Reviewed

    D. Ito, T. Yoshimura, N. Fujimura, T. Ito

    Appl. Sur. Sci. Elsevier   159   138 - 142   2000.06

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  • Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure Reviewed

    T. Yoshimura, N. Fujimura, D. Ito, T. Ito

    J. Appl. Phys AIP Publishing LLC   87 ( 7 )   3444 - 3449   2000.04

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    Kind of work：Joint Work  

  • Effect of plasma-induced damage on initial reactions of titanium thin films on Si surface Reviewed

    T. Yamaguchi, A. Hama, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   76 ( 17 )   2358 - 2360   2000.04

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    Kind of work：Joint Work  

  • Detailed structural analysis of Ce doped Si thin films Reviewed

    T. Yokota, N. Fujimura, Y. Morinaga, T. Ito

    Physica E Elsevier   10   237 - 241   2000.01

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  • Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide Reviewed

    H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   38 ( 9B )   5448 - 5451   1999.09

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  • Ferroelectricity of YMnO3 thin films prepared via solution Reviewed

    H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   75 ( 5 )   719 - 721   1999.08

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  • Preferred orientation phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films. Reviewed

    N. Fujimura, Darin T. Thomas, Stephen K. Streiffer, Angus I. Kingon

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   37 ( 9B )   5185 - 5188   1998.09

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  • Effect of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO3. Reviewed

    T. Shimura, N. Fujimura, S. Yamamori, T. Yoshimura,　T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   37 ( 9B )   5280 - 5284   1998.09

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  • Ferroelectric properties of c-oriented YMnO3 thin films deposited on Si substrate. Reviewed

    T. Yoshimura, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   73 ( 3 )   414 - 416   1998.07

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  • Microstructure and dielectric properties of YMnO3 thin films prepared by dip-coating Reviewed

    H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito

    Journal of American Ceramic Soc American Ceramic Soc   81 ( 5 )   1357 - 1360   1998.05

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  • Growth and properties of YMnO3 thin films for non-volatile memories. Reviewed

    T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito

    Journal of the Korean Physical Society Korean Physical Society   32   S1632 - S1635   1998.02

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  • Preparation and dielectric properties of YMnO3 ferroelectric thin films by sol-gel method. Reviewed

    K. Tadanaga, H. Kitahata, T. Minami, N. Fujimura, T. Ito

    Journal of Sol-Gel Science and Technology Springer   13 ( 41642 )   903 - 907   1998.01

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  • YMnO3 thin films prepared from solutions for non-volatile memory devices. Reviewed

    N. Fujimura, H.Tanaka, H.Kitahata, K.Tadanaga, T. Ito, T. Minami

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   36 ( 12A )   L1601 - L1603   1997.12

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  • Mechanism for ordering in SiGe films with reconstructed surface. Reviewed

    T. Araki, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   71 ( 9 )   1174 - 1176   1997.09

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  • Fabrication of YMnO3 thin films on Si substrates by a pulsed laser deposition method. Reviewed

    T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   36 ( 9B )   5921 - 5924   1997.09

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  • The stability of ordered structures in SiGe films examined by strain energy calculations. Reviewed

    T. Araki, N. Fujimura, T. Ito

    J. Crystal Growth Elsevier   174 ( 41643 )   675 - 679   1997.04

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  • Effect of Ce doping on the growth of ZnO thin films. Reviewed

    Y. Morinaga, K. Sakuragi, N. Fujimura, T. Ito;

    J. Crystal Growth Elsevier   174 ( 41643 )   691 - 695   1997.04

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  • Formation of YMnO3 films drectly on Si substrate. Reviewed

    N. Aoki, N. Fujimura, T. Yoshimura, T. Ito

    J. Crystal Growth Elsevier   174 ( 41643 )   796 - 800   1997.04

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  • The initial stage of BaTiO3 epitaxial films on etched and annealed SrTiO3 substrate. Reviewed

    T. Yoshimura, N. Fujimura, T. Ito

    J. Crystal Growth Elsevier   174 ( 41643 )   790 - 795   1997.04

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  • Growth mechanism of YMnO3 film as a new candidate for non-volatile memory devices. Reviewed

    N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   80 ( 12 )   7084 - 7088   1996.12

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  • Structural characterization of ordered SiGe films grown on Ge (100) and Si (100) substrate. Reviewed

    T. Araki, N. Fujimura, T. Ito, A. Wakahara, A. Sasaki

    J. Appl. Phys. AIP Publishing LLC   80 ( 7 )   3804 - 3807   1996.10

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  • Epitaxially grown YMnO3 film: new candidate for non-volatile memory devices. Reviewed

    N. Fujimura, T. Ishida, T. Yoshimura, T. Ito

    Applied Physics Letter American Institute of Physics   69 ( 12 )   1011 - 1013   1996.08

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  • Epitaxial growth of BaTiO3 thin films and their internal stress. Reviewed

    S.T.Lee, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   34 ( 9B )   5168 - 5171   1995.09

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  • Epitaxial orientation control of LiTaO3 film and interfacial coulomb's potential . Reviewed

    N. Fujimura, H. Tsuboi, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   34 ( 9B )   5163 - 5167   1995.09

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  • Orientation control of (Ca, Sr)CuO2 thin films. Reviewed

    S. Nagai, H. Tanaka, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   77 ( 8 )   3805 - 3811   1995.04

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  • Epitaxy Control and Interfacial Coulomb's Potential of LiNbO3 Thin Films on R-cut Sapphire. Reviewed

    N.Fujimura, H.Tsuboi, T.Ito

    Transactions of Materials Research Society Japan   14B   1627 - 1631   1994.10

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

  • Growth Orientation Control of (Ca, Sr)CuO2 Films Deposited on Glass and (001) MgO Substrates. Reviewed

    S.Nagai, H.Tanaka, N.Fujimura, I.Ito

    Transactions of Materials Research Society Japan   19A   513 - 516   1994.10

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  • (115) Bi2Sr2CuOx epitaxial films on (110) SrTiO3 by solid phase epitaxy. Reviewed

    S. Nagai, N. Fujimura, H. Tanaka, T. Ito

    J. Crystal Growth Elsevier   ( 41641 )   65 - 71   1994.06

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  • LiNbO3 film with a new epitaxial orientation on R-cut sapphire. Reviewed

    N. Fujimura, M. Kakinoki, H. Tsuboi, T. Ito

    J.Appl.Phys. AIP Publishing LLC   75 ( 4 )   2169 - 2179   1994.02

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  • Epiatxial growth and structural characterization of erbium silicide formed on (100) Si through a solid-phase reaction. Reviewed

    Y.K. Lee, N. Fujimura, T. Ito, N. Itoh

    J. Crystal Growth Elsevier   134 ( 41702 )   247 - 254   1993.12

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  • An X-ray analysis of domain structure in epitaxial YSi2-x films grown on (100) Si substrate. Reviewed

    Y.K. Lee, N. Fujimura, T. Ito , N. Itoh

    Nano-structured Materials Elsevier   2   603 - 604   1993.11

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  • Control of preferred orientation for ZnOx films: control of self-texture. Reviewed

    N. Fujimura, T. Nishihara, S. Goto, J. Xu, T. Ito

    J. Crystal Growth Elsevier   130 ( 41641 )   269 - 279   1993.05

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  • Epitaxial growth of yttrium silicide YSi2-x on (100)Si. Reviewed

    Y.K.Lee, N. Fujimura, T. Ito

    Journal of Alloys and Compounds Elsevier   193 ( 41641 )   289 - 291   1993.03

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  • Structural control of non-equilibrium WSi2.6 thin film by external stress. Reviewed

    N.Fujimura, S.Tachibana, N.Hosokawa , and T.Ito

    J. Appl. Phys. AIP Publishing LLC   73 ( 2 )   733 - 739   1993.01

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    Kind of work：Joint Work  

  • Effects of interfacial energy on the epitaxial growth of LiNbO3. (in Japanese) Reviewed

    T. Ito, N. Fujimura, M. Kakinoki

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   39   105 - 108   1992.02

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    Kind of work：Joint Work  

  • Orientation control of the Bi2Sr2CuOx thin films. -Self texture and epiraxy- (in Japanese) Reviewed

    S. Nagai, H. Tanaka, N. Fujimura, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   39   744 - 747   1992.02

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    Kind of work：Joint Work  

  • The crystallization and growth of the High-Tc phase in Bi-Sr-Ca-Cu-O thin films. Reviewed

    S. Nagai, N. Fujimura, T. Ito

    J. Crystal Growth Elsevier   115 ( 41643 )   769 - 773   1991.12

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    Kind of work：Joint Work  

  • Heteroepitaxy of LiNbO3 and LiNb3O8 thin films on C-cut sapphire

    N.Fujimura, T. Ito, M. Kakinoki

    J. Crystal Growth Elsevier   115 ( 41643 )   821 - 825   1991.12

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    Kind of work：Joint Work  

  • Heteroepitaxy of zinc-oxide thin-films, considering nonepitaxial preferential orientation Reviewed

    S. Goto, N. Fujimura, T. Nishihara, T. Ito

    J. Crystal Growth Elsevier   115 ( 41643 )   816 - 820   1991.12

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    Kind of work：Joint Work  

  • Annealing behavior of AL-Y alloy film for interconnection conductor in microeletronic devices Reviewed

    Y.K. Lee, N. Fujimura, T. Ito, N. Nishida

    Journal of Vacuum Science & Technology B AIP Publishing LLC   9 ( 5 )   2542 - 2547   1991.09

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    Kind of work：Joint Work  

  • Formation of the High-Tc phase in Pb-free Bi-Sr-Ca-Cu-O thin film

    S. Nagai, N. Fujimura, T. Ito, K. Shiraishi

    Jpn. J. Appl. Phys, The Japan Society of Applied Physics   30 ( 5A )   L826 - L829   1991.05

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    Kind of work：Joint Work  

  • A candidate for interconnection material; Al-Y alloy thin films

    S. Nagai, N. Fujimura, T. Ito, K. Shiraishi

    Materials Letters Elsevier   10 ( 7-8 )   344 - 347   1991.01

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    Kind of work：Joint Work  

  • Structural, electrical and optical characterization of sputtered ZnOx thin film

    T. Nishihara, N. Fujimura, T. Ito

    Transactions of Material Research Soc.Japan 日本ＭＲＳ   1   200 - 204   1990.12

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    Kind of work：Joint Work  

  • Influence of external stress for non-equilibrium thin films

    N. Fujimura, S. Tachibana, T. Ito

    Transactions of Material Research Soc.Japan 日本ＭＲＳ   1   205 - 210   1990.12

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    Kind of work：Joint Work  

  • Solid phase reactions and change in stress of TiN/Ti/Si for a diffusion barrier

    N. Fujimura, T. Matsui, T. Ito, Y. Nakayama

    J. Appl. Phys, AIP Publishing LLC   67 ( 6 )   2899 - 2903   1990.03

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    Kind of work：Joint Work  

  • The application of ZnOx thin films for the transparent conducting films and the SAW devices.(in Japanese)

    N. Fujimura, S. Goto, T. Nishihara, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   37   12 - 16   1990.01

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    Kind of work：Joint Work  

  • The phase transformation and the behavior of excess atoms in Bi system superconducting thin films. (in Japanese)

    S. Nagai, N. Fujimura, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   37   99 - 102   1990.01

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    Kind of work：Joint Work  

  • The formation of LiNbO3 thin films. (in Japanese)

    M. Kakinoki, K. Ando, N. Fujimura, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   37   17 - 22   1990.01

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    Kind of work：Joint Work  

  • Characterization of Si-rich WSix on Si

    N. Fujimura, S. Tachibana, T. Ito

    Applied Surface Science Elsevier   41-42   286 - 289   1989.11

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    Kind of work：Joint Work  

  • TiSi2 formation at the Ti-rich TiNx/Si interface

    N. Fujimura, T. Ito

    Applied Surface Science Elsevier   41-42   272 - 276   1989.11

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    Kind of work：Joint Work  

  • Effects of texture in the titanium layer on solid state reactions for Al/Ti/Si and Al/TiN/Ti/Si system

    N. Fujimura, N. Nishida, T. Ito, Y. Nakayama

    Materials Science and Engineering Elsevier   108   153 - 157   1989.02

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    Kind of work：Joint Work  

  • Silicide formation in the Pt/a-Si:H system

    T. Ito, N. Fujimura, Y. Nakayama

    Thin Solid Films Elsevier   167 ( 1-2 )   187 - 194   1988.12

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    Kind of work：Joint Work  

  • Dissolution pits and Si epitaxial regrowth in the Al/(111)Si system

    N. Fujimura, H. Kurosaki, T. Ito, Y. Nakayama

    J. Appl. Phys AIP Publishing LLC   64 ( 9 )   4499 - 4502   1988.11

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    Kind of work：Joint Work  

  • Structural change of a-Si:H by annealing

    T. Ito, N. Fujimura, Y. Nakayama

    Transactions of Japan Institute of Metals 日本金属学会   29   187 - 190   1988.03

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    Kind of work：Joint Work  

  • Structural Change of a-Si:H by Annealing Reviewed

    T.Ito, N.Fujimura, Y.Nakayama

    Transactions of Japan Institute of Metals   29   187 - 190   1988.03

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    Publishing type：Research paper (scientific journal)   Kind of work：Joint Work  

  • Structural characterization of Cu-Cr flms

    T. Ito, N. Fujimura, N. Nishida, T. Kanemura, Y. Nakayama

    Materials Letters Elsevier   6   41 - 44   1987.11

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    Kind of work：Joint Work  

  • Change in film stress of a-Si:H by annealing

    T. Ito, N. Fujimura, Y. Nakayama

    Transactions of Japan Institute of Metals 日本金属学会   27   789 - 790   1986.10

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    Kind of work：Joint Work  

  • Reactions between Ti and Al films on a-Si:H

    T. Ito, N. Fujimura, Y. Nakayama

    Materials Letters Elsevier   4   350 - 352   1986.08

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    Kind of work：Joint Work  

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Books and Other Publications

MISC

  • Consideration of Interaction between Two-dimensional Semiconductor and Solvent Molecules toward Selective Sensing of DMF Molecule

    福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   2021（ ISSN:2436-7613 ）

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  • 分子接面による二次元半導体の電子光学物性制御

    桐谷乃輔, 吉村武, 藤村紀文

    大阪府立大学研究推進機構放射線研究センター放射線施設共同利用報告書   2018   2020

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  • Bright monolayer MoS<sub>2</sub> via spontaneous formation of superacid ultra thin film

    山田悠貴, 吉村武, 芦田淳, 藤村紀文, 篠北啓介, 松田一成, 桐谷乃輔

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   81st   2020（ ISSN:2436-7613 ）

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  • Electronic structure modulation of monolayer molybdenum disulfide by electrostatic interaction of anionic molecules

    木村大輔, 山田悠貴, 福井暁人, 青木佑樹, 松山圭吾, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020（ ISSN:2436-7613 ）

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  • Relationship between Spontaneous Pattern Formation of Donor Molecules and Surface States on 2 Dimensional Semiconducting Materials

    一宮永, 瀧ノ上正浩, 福井暁人, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム   18 ( 1 )   2019（ ISSN:1881-364X ）

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  • Enhancement of output power of piezoelectric MEMS vibration energy harvesters with 2-degree-of-freedom system

    吉村武, 荒牧正明, 藤村紀文, 村上修一, 神田健介

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)   36th   2019

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  • 溶媒和したレドックス活性分子が誘起する2D半導体の超高発光化

    一宮永, 福井暁人, 青木佑樹, 山田悠貴, 吉村武, 芦田淳, 藤村紀文, 桐谷乃輔, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集   39th   2019

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Charge of on-campus class subject

  • 機能デバイス物性特論

    2024   Weekly class   Graduate school

  • 電子物理系特別研究第1（電子物性）

    2024   Intensive lecture   Graduate school

  • 電子物理系特別演習第1（電子物性）

    2024   Intensive lecture   Graduate school

  • 機能デバイス物性特別講義

    2024   Weekly class   Graduate school

Social Activities　⇒ Link to the list of Social Activities

  • 大阪府立大学　技術紹介フェアー 機能融合型新物質の開発（磁性半導体・強磁性強誘電体）

    2004.04 - 2005.03

  • 大阪府立大学　技術紹介フェアー 大気圧非平衡プラズマを用いた酸化物・窒化物薄膜作成プロセスの新展開

    2004.04 - 2005.03

  • 大阪府立大学ニューフロンティア材料研究会第182回講演会 次世代トランジスタ－場を用いたマニピュレーションの舞台装置

    2003.04 - 2004.03

  • 大阪府立大学ニューフロンティア材料研究会講演会 「磁性と誘電性の融合をめざして」 磁性強誘電体の現状とその電界効果型トランジスタへの応用

    2003.04 - 2004.03

  • 大阪府立大学府民講座 エレクトロニクス最前線：半導体ナノデバイスから知能デバイスまで

    2003.04 - 2004.03

Job title

  • Manager within the university

    Osaka Metropolitan University

    副学長  2022.04

  • Job title within the department

    Organization for Research Promotion 協創研究センター 

    センター長  2022.04

  • Job title within the department

    Organization for Research Promotion 

    副機構長  2022.04