工学部 電子物理工学科

2023/05/30 更新
大学院工学研究科 電子物理系専攻
教授 2022年04月 - 継続中
工学部 電子物理工学科
教授 2022年04月 - 継続中
博士(工学) ( 大阪府立大学 )
ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学 / 機能デバイス物性
磁性半導体と磁性強誘電体を用いた不揮発性論理演算素子の開発
分極を用いて高機能化したMOSFETの開発
磁性半導体の作成とその物性
マルチフェロイック
大気圧プラズマを用いた新機能物質の作成
強誘電体と圧電体を用いたトランジスタの開発
強誘電体と磁性半導体を用いたトランジスタの開発
磁性半導体の物性
磁性強誘電体の作製とその物性
強誘電体ゲートトランジスタの開発
強誘電体ゲートトランジスタの物性
自発分極、強誘電体、電界効果、トランジスタ
マルチフェロイック、磁性半導体、磁性強誘電体
大気圧プラズマ、酸化物、窒化物、MOSFET
強誘電体、圧電体、トランジスタ
強誘電体、磁性半導体、不揮発性メモリ、論理演算素子
半導体、磁性、磁性半導体
強誘電体、磁性
強誘電体、トランジスタ
強誘電体、トランジスタ
日本セラミックス協会
1995年04月 - 継続中
Materials Research Soc.
1994年04月 - 継続中
日本金属学会
1984年04月 - 継続中
応用物理学会
1984年04月 - 継続中
参与 一般財団法人大阪科学技術センター
2021年04月 - 2024年06月
Board Member Journal of Advanced Dielectrics (JAD)
2021年04月 - 2022年03月
上級エリアコーディネーター 関西イノベーションイニシアティブ
2021年04月 - 2022年03月
座長 堺市 NAKAMOZU イノベーションコア創出コンソーシアム
2021年04月 - 2022年03月
Board Member Journal of Advanced Dielectrics (JAD)
2020年04月 - 2021年03月
上級エリアコーディネーター 関西イノベーションイニシアティブ
2020年04月 - 2021年03月
座長 堺市 NAKAMOZU イノベーションコア創出コンソーシアム
2020年04月 - 2021年03月
理事・副会長 日本誘電体学会(The Dielectric Society of Japan, DESJ)
2019年04月 - 2020年03月
Chair of organizing committee 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics
2019年04月 - 2020年03月
Program committee Compound Semiconductor Week 2019
2019年04月 - 2020年03月
学外審査委員 兵庫県立大学
2019年04月 - 2020年03月
岡崎清賞
2021年06月 フルラス・岡崎記念会
平成30年度 日本材料学会論文賞
2019年05月 日本材料学会
第10回集積化MEMSシンポジウム 優秀論文賞
2019年03月 応用物理学会
JJAP編集貢献賞
2005年04月 応用物理学会
日本金属学会奨励賞
1993年12月 日本金属学会
Unusual selective monitoring of N,N-dimethylformamide in a two-dimensional layered field-effect transistor
A. Fukui, K. Matsuyama, H. Onoe, S. Itai, H. Ikeno, S. Hiraoka, K. Hiura, Y. Hijikata, J. Pirillo, T. Nagata, K. Takei, T. Yoshimura, N. Fujimura, D. Kiriya
ChemRxiv 2023年01月
Selective isolation of mono to quad layered 2D materials via sonication-based solution engineering
T. Nakamoto, K. Matsuyama, T. Yoshimura, N. Fujimura, D. Kiriya
ChemRxiv 2022年12月
Enhanced Performance on Piezoelectric MEMS Vibration Energy Harvester by Dynamic Magnifier under Impulsive Force 査読
Sengsavang Aphayvong, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura and Takeshi Yoshimura
Applied Physics Letters 121 ( 17 ) 172902 - 172902 2022年10月
Strong photoluminescence enhancement in molybdenum disulfide in aqueous media 査読
Kimura Daisuke, Yotsuya Shotaro, Yoshimura Takeshi, Fujimura Norifumi, Kiriya Daisuke
Langmuir 38 ( 43 ) 13048 - 13054 2022年10月
Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping
Keigo Matsuyama, Ryuya Aoki, Kohei Miura, Akito Fukui, Yoshihiko Togawa, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya
ACS Applied Materials and Interfaces 14 ( 6 ) 8163 - 8170 2022年02月( ISSN:1944-8244 )
Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique.
Akito Fukui, Yuki Aoki, Keigo Matsuyama, Hisashi Ichimiya, Ryo Nouchi, Kuniharu Takei, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya
Nanotechnology 2021年11月
Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique 査読
A. Fukui†, Y. Aoki†, K. Matsuyama, H. Ichimiya, R. Nouchi, K. Takei, A. Ashida, T. Yoshimura, N. Fujimura, D. Kiriya († Equal contribution)
Nanotechnology 雑誌 IOP Publishing 33 ( 7 ) 2021年11月
原子層半導体と分子性化合物の融合機能化
桐谷乃輔, 藤村紀文
材料 雑誌 日本材料学会 70 ( 10 ) 721 - 726 2021年10月
Time-Dependent Imprint in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> Ferroelectric Thin Films
Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura
Advanced Electronic Materials 7 ( 8 ) 2021年08月
Investigation of the wake-up process and time-dependent imprint of Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> film through the direct piezoelectric response
Kenshi Takada, Mikio Murase, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Norifumi Fujimura, Takeshi Yoshimura
Applied Physics Letters 119 ( 3 ) 2021年07月( ISSN:0003-6951 )
Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO<inf>3</inf> ferroelectric epitaxial thin film
K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura
AIP Advances 11 ( 7 ) 2021年07月
Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response 査読
K Takada, M Murase, S Migita, Y Morita, H Ota, N Fujimura, T Yoshimura
Applied Physics Letters 雑誌 米国物理学協会 119 ( 3 ) 2021年07月
Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO3 ferroelectric epitaxial thin film 査読
K. Miura, D. Kiriya, T. Yoshimura, and N. Fujimura
AIP Advances 雑誌 American Institute of Physics 11 2021年07月
Yuki Yamada, Yan Zhang, Hidekazu Ikeno, Keisuke Shinokita, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya
ACS Applied Materials & Interfaces 13 ( 21 ) 25280 - 25289 2021年06月( ISSN:1944-8244 )
Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films 査読
Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura
Advanced Electronic Materials 雑誌 Wiley-VCH 7 ( 8 ) 2021年06月
Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation 査読
Y. Yamada, Y. Zhang, H. Ikeno, K. Shinokita, T. Yoshimura, A. Ashida, N. Fujimura, K. Matsuda, and D. Kiriya
ACS Applied Materials & Interfaces 雑誌 American Chemical Society 13 ( 21 ) 2021年05月
Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya
Applied Sciences 11 ( 8 ) 3530 - 3530 2021年04月
Strong Photoluminescence Enhancement from Bilayer Molybdenum Disulfide via the Combination of UV-irradiation and Superacid Molecular Treatment 査読
Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya
Applied Sciences 雑誌 MDPI 11 ( 8 ) 3530 - 3530 2021年04月
Change in the defect structure of composition controlled single-phase YbFe2O4 epitaxial thin films 査読
K. Shimamoto, J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics 59 ( SP ) SPPB07 - SPPB07 2020年11月( ISSN:0021-4922 )
Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films 査読
M. Murase, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics 59 ( SP ) SPPC05 - SPPC05 2020年11月( ISSN:0021-4922 )
Investigation of efficient piezoelectric energy harvesting from impulsive force 査読
S. Aphayvong, T. Yoshimura, S. Murakami, K. Kanda, N. Fujimura
Japanese Journal of Applied Physics 59 ( SP ) SPPD04 - SPPD04 2020年11月( ISSN:0021-4922 )
Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide 査読
Yuki Yamada, Keisuke Shinokita, Yasuo Okajima, Sakura N. Takeda, Yuji Matsushita, Kuniharu Takei, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya
ACS Applied Materials & Interfaces 12 ( 32 ) 36496 - 36504 2020年08月( ISSN:1944-8244 )
Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films 査読
M. Murase, T. Yoshimura and N. Fujimura
Japanese Journal of Applied Physics (Special Issues) 雑誌 59 ( SP ) 2020年08月
Investigation of Efficient Piezoelectric Energy Harvesting from Impulsive Force 査読
S. Aphayvong, T. Yoshimura, S. Murakami, K. Kanda, N. Fujimura
Japanese Journal of Applied Physics (Special Issues) 雑誌 59 ( SP ) 2020年08月
Change in the defect structure of composition controlled single-phase YbFe2O4 epitaxial thin films 査読
K. Shimamoto, J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura and N. Fujimura
Japanese Journal of Applied Physics (Special Issues) 雑誌 59 ( SP ) 2020年08月
Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide 査読
Y. Yamada, K. Shinokita, Y. Okajima, S. Takeda, Y. Matsushita, K. Takei, T. Yoshimura, A. Ashida, N. Fujimura, K. Matsuda and D. Kiriya
ACS Applied Materials & Interfaces 雑誌 12 ( 32 ) 2020年07月
Yuji Matsushita, Takeshi Yoshimura, Daisuke Kiriya, Norifumi Fujimura
Applied Physics Express 13 ( 4 ) 041007 - 041007 2020年04月( ISSN:1882-0778 )
Investigation of the electrocaloric effect in ferroelectric polymer film through direct measurement under alternating electric field 査読
Y. Matsushita, T. Yoshimura, D. Kiriya, N. Fujimura
Appl. Phys. Express 雑誌 13 2020年04月
Valence states and the magnetism of Eu ions in Eu-doped GaN 査読
Takumi Nunokawa, Yasufumi Fujiwara, Yusuke Miyata, Norifumi Fujimura, Takahiro Sakurai, Hitoshi Ohta, Akira Masago, Hikari Shinya, Tetsuya Fukushima, Kazunori Sato, Hiroshi Katayama-Yoshida
Journal of Applied Physics 127 ( 8 ) 083901 - 083901 2020年02月( ISSN:0021-8979 )
Valence states and the magnetism of Eu ions in Eu-doped GaN 査読
T.Nunokawa, Y. Fujiwara, Y. Miyata, N. Fujimura, T.Sakurai, H.Ohta, A.Masago, H.Shinya, T. Fukushima, K. Sato, H. Katayama-Yoshida
Journal of Applied Physics 雑誌 127 2020年02月
Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs 査読
Norifumi Fujimura, Takeshi Yoshimura
Topics in Applied Physics 131 147 - 174 2020年( ISSN:0303-4216 )
Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoro, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura
ECS Transactions 25 ( 8 ) 693 - 698 2019年12月
Output Power of Piezoelectric MEMS Vibration Energy Harvesters under Random Oscillation
S. Murakami, T. Yoshimura, M. Aramaki, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura
Journal of Physics: Conference Series 1407 ( 1 ) 2019年12月( ISSN:1742-6588 )
Quantitative analysis of the direct piezoelectric response of bismuth ferrite films by scanning probe microscopy 査読
K. Kariya, T. Yoshimura, K. Ujimoto, N. Fujimura
Scientific Reports 雑誌 9 2019年12月
Kento Kariya, Takeshi Yoshimura, Katsuya Ujimoto, Norifumi Fujimura
Scientific Reports 9 ( 1 ) 2019年12月
Fabrication of chemical composition controlled YbFe2O4 epitaxial thin films 査読
J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura
Japanese Journal of Applied Physics 58 ( SL ) SLLB11 - SLLB11 2019年11月( ISSN:0021-4922 )
Kenshi Takada, Yuki Saho, Takeshi Yoshimura, Norifumi Fujimura
Japanese Journal of Applied Physics 58 ( SL ) SLLB03 - SLLB03 2019年11月( ISSN:0021-4922 )
Piezoelectric energy harvesting from AC current-carrying wire 査読
Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura
Japanese Journal of Applied Physics 58 ( SL ) SLLD10 - SLLD10 2019年11月( ISSN:0021-4922 )
Perspectives of Novel Applications of Ferroelectric/Piezoelectric Thin Films for Smart Systems 査読
Norifumi Fujimura and Takeshi Yoshimura
Materials Research Meeting 2019 2019年10月
Fabrication of chemical composition controlled YbFe2O4 epitaxial thin films 査読
J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys. 雑誌 58 2019年08月
Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya
ChemistryOpen 8 ( 7 ) 908 - 914 2019年07月( ISSN:2191-1363 )
Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor 査読
Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura
Sensors and Actuators A: Physical 291 167 - 173 2019年06月( ISSN:0924-4247 )
Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya
Applied Physics Express 12 ( 5 ) 051014 - 051014 2019年05月( ISSN:1882-0778 )
Hisashi Ichimiya, Masahiro Takinoue, Akito Fukui, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya
ACS Applied Materials & Interfaces 11 ( 17 ) 15922 - 15926 2019年05月( ISSN:1944-8244 )
Time-Resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction 査読
Norifumi Fujimura Kenshi Takada Takeshi Yoshimura
2019 MRS Spring Meeting 2019年04月
Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura
Applied Physics Letters 114 ( 13 ) 133902 - 133902 2019年04月( ISSN:0003-6951 )
Kohei Miura, Daisuke Kiriya, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura
physica status solidi (a) 216 ( 5 ) 1700800 - 1700800 2019年03月( ISSN:1862-6300 )
Saturated and Pinched Ferroelectric Hysteresis Loops in BiFeO3 Ceramics 査読
Jin Hong Choi, Takeshi Yoshimura, Norifumi Fujimura, Chae Il Cheon
Journal of the Korean Physical Society 74 ( 3 ) 269 - 273 2019年02月( ISSN:0374-4884 )
K. Takada, T. Yoshimura, N. Fujimura
AIP Advances 9 ( 2 ) 025037 - 025037 2019年02月
Relationship between Spontaneous Pattern Formation of Donor Molecules and Surface States on 2 Dimensional Semiconducting Materials 査読
H. Ichimiya, M. Takinoue, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya
Chemistry and Micro-Nano Systems,18,1,2019, 雑誌 2019年
Convection-Flow-Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface-Charge Transfer Doping of Molybdenum Disulfide 査読
Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, and Daisuke Kiriya
ChemistryOpen 雑誌 2019年
The effects of the chemical composition on the charge/spin ordering transition in YbFe2O4 epitaxial films 査読
J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida and N. Fujimura
JJAP FMA特集号 雑誌 2019年
Piezoelectric energy harvesting from AC current-carrying wire 査読
Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura
JJAP FMA特集号 雑誌 2019年
The Effect of Small Amount of Oxygen During Deposition for the Structural Change of Sputtered HfO2-based Films 査読
Kenshi Takada, Yuki Saho, Takeshi Yoshimura, and Norifumi Fujimura
JJAP 雑誌 2019年
Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules 査読
H. Ichimiya, M. Takinoue, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya
ACS Appl. Mater. Interfaces, 11 (17), pp 15922–15926 (2019) 雑誌 2019年
Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment 査読
Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura and Daisuke Kiriya
Applied Physics Express, Volume 12, Number 5,051014,1-5 (2019) 雑誌 2019年
Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system 査読
Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura
Appl. Phys. Lett. 114, 133902,1-4 (2019) 雑誌 2019年
Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor 査読
Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura
Sensors and Actuators A: Physical, Volume 291, 167-173,(2019) 雑誌 2019年
Systematic Study of Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Acid Treatment 査読
D. Kiriya, Y. Hijikata, J. Pirillo, R. Kitaura, A. Murai, A. Ashida, T. Yoshimura, N. Fujimura
Langmuir, 34, 10234-10249(2018). 雑誌 2018年
Time-resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction 査読
K. Takada, T. Yoshimura, N. Fujimura
AIP Advances 9, 025037,1-5 (2019). 雑誌 2018年
Characterization of piezoelectric MEMS vibration energy harvesters 査読
S. Murakami, T. Yoshimura, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura
Japanese Journal of Applied Physics 57, 11UD10 (2018), 雑誌 2018年
(001) Si 基板直上への Y doped HfO2薄膜のエピタキシャル成長 査読
鎌田 大輝, 高田 賢志, 吉村 武, 藤村 紀文
材料,Vol. 67,No. 9, pp. 844-848(2018). 雑誌 2018年
Tuning Transition-Metal Dichalcogenide Field-EffectTransistor by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film 査読
H. Ichimiya, M. Takinoue, A. Fukui, K. Miura, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya
ACS Nano, 12, 10, 10123-10129(2018), 雑誌 2018年
The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO3 thin films 査読
N. Okamoto, K. Kariya, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics Volume 57, 11S,11UF07,1-4 (2018), 雑誌 2018年
Direct piezoelectric response in vinylidene fluoride – trifluoroethylene copolymer films 査読
Y. Matsushita, I. Kanagawa, T. Yoshimura, N. Fujimura
Japanese Journal of Applied Physics, Volume 57, Number 11S ,11UG01,1-4(2018), 雑誌 2018年
Investigation of the Effect of Nonlinearity on the Electromechanical Properties of Piezoelectric MEMS Vibration Energy Harvesters 査読
M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, K. Satoh, K. Kanda, N. Fujimura
Japanese Journal of Applied Physics Volume 57, 11S,11UD03,1-4 (2018), 雑誌 2018年
Reaction of N,N'-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide 査読
A. Fukui, K. Miura, H. Ichimiya, A. Tsurusaki, K. Kariya, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya
AIP Advances 8, 055313,1-7 (2018), 雑誌 2018年
Fabrication and characterization of (Ba,La)SnO3 semiconducting epitaxial films on (111) and (001) SrTiO3 substrates 査読
K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura
Physica Status Solidi A,216,1700800,1-7(2018). 雑誌 2018年
Growth and ferroelectric properties of La and Al codoped BiFeO3 epitaxial films 査読
Hirokazu Izumi,Takeshi Yoshimura,Norifumi Fujimura
Journal of Applied Physics 121(2017), 174102 雑誌 2017年
Ultrafast dynamics of coherent optical phonon correlated with the antiferromagnetic transition in a hexagonal YMnO3 epitaxial film 査読
Takayuki Hasegawa, Norifumi Fujimura, and Masaaki Nakayama
Appl. Phys. Lett. 111, 192901 (2017) 雑誌 2017年
Development of piezoelectric bistable energy harvester based on buckled beam with axially constrained end condition for human motion 査読
Ali M. Eltanany, T. Yoshimura, N. Fujimura, M. R. Ebied, and M. G. S. Ali
Japanese Journal of Applied Physics, Volume 56, Number 10S (2017). 雑誌 2017年
Crystallographic Polarity Effect of ZnO on Thin Film Growth of Pentacene 査読
Tatsuru Nakamura, Takahiro Nagata, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba,Toyohiro Chikyow, Norifumi Fujimura, and Yutaka Wakayama
Japanese Journal of Applied Physics, Volume 56, Number 4S (2017) 雑誌 2017年
Photoelectron spectroscopic study on monolayer pentacene thin film/ polar ZnO single crystal hybrid interface 査読
Takahiro Nagata, Tatsuru Nakamura, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, and Yutaka Wakayama
Applied Physics Express, 10(2017), 025702 1-4 雑誌 2017年
Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3 査読
John D. Baniecki, Takashi Yamazaki, Dan Ricinschi, Quentin Van Overmeere, Hiroyuki Aso, Yusuke Miyata, Hiroaki Yamada, Norifumi Fujimura, Ronald Maran, Toshihisa Anazawa, Nagarajan Valanoor, and Yoshihiko Imanaka
Scientific Reports, 7 (2017), 41725 1-12, 雑誌 2017年
Origin of the photoinduced current of strongly correlated YMnO3 ferroelectric epitaxial films 査読
Kohei Miura, Lejun Zhang, Daisuke Kiriya, Atsushi Ashida, Takeshi Yoshimura and Norifumi Fujimura
Japanese Journal of Applied Physics, 56(2017), Number 10S 雑誌 2017年
Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs 査読
Y. Miyata, T. Yoshimura, A. Ashida, and N. Fujimura
Ferroelectric-Gate Field Effect Transistor Memories, Springer(2016)111-138,. 雑誌 2016年
Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, ply(vinylidene fluoride-trifluoroethylene), as a gate dielectric 査読
Yusuke Miyata, Takeshi Yoshimura, Atsushi Ashida, and Norifumi Fujimura
Japanese Journal of Applied Physics 55(2016), 04EE04 1-4 雑誌 2016年
Reliability of the properties of (Pb,La)(Zr,Ti)O3 capacitors with non–noble metal oxide electrodes stored in an H2 atmosphere 査読
Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido
MRS Advances 1(2016) 369−374 雑誌 2016年
Al: ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb, La)(Zr,Ti)O3 capacitors 査読
Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima
Electronics Letters 52(2016), 230−232 雑誌 2016年
Comparative Study of Hydrogen - and Deuterium - induced Degradation of Ferroelectric (Pb,La)(Zr,Ti)O3 Capacitors Using Time of Flight Secondary Ion Measurement 査読
Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido
IEEE Trans. Ultrason. Ferroelectr. Freq. Control, 63(2016), 1668-1673 雑誌 2016年
Comparative Study of Ferroelectric (K,Na)NbO3 Thin Films Pulsed Laser Deposition on Platinum Substrates with Different Orientation 査読
R. Tamano, Y. Takada, N. Okamoto. T. Saito, K. Higuchi, A. Kitajima, T. Yoshimura, and N. Fujimura
Proc. 2016 IEEE ISAF/ECAPD/PFM(2016), 1−4 雑誌 2016年
Evaluatioion of Deuterium ion Profile in (Pb,La)(Zr,Ti)O3 Capacitors Structures with Conductive Oxide Top Electrode by Time of Flight Secondary Ion Mass Spectrometry 査読
Y. Takada, R. Tamano, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima and R. Shishido
Proc. 2016 IEEE ISAF/ECAPD/PFM(2016), 1−4 雑誌 2016年
Fabrication of Doped Pb(Zr,Ti)O3 Capacitors on Pt Substrates with Different Orientations 査読
R. Tamano, T. Amano, Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima
Electronics Letters, 52(2016), 1399-1401 雑誌 2016年
Ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors employing Al-doped ZnO top electrodes prepared by pulsed laser deposition under different oxygen pressures 査読
Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima
Japanese Journal of Applied Physics (2016), 55, 06JB04. 雑誌 2016年
Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition 査読
Atsushi Ashida, Shunsuke Sato, Takeshi Yoshimura, Norifumi Fujimura,
Journal of Crystal Growth(2016) 雑誌 2016年
High efficiency piezoelectric MEMS vibration energy harvesters using (100) oriented BiFeO3 Films 査読
M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, and N. Fujimura
Proc. of the 30th IEEE International Conference on Micro Electro Mechanical Systems (2016), 829-832 雑誌 2016年
Direct measurements of electrocaloric effect in ferroelectrics using thin-film thermocouples 査読
Yuji Matsushita, Atsushi Nochida, Takeshi Yoshimura, and Norifumi Fujimura
Jpn. J. Appl. Phys. 55(2016), 10TB04 1-4 雑誌 2016年
Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films 査読
Jin Hong Choi, Takeshi Yoshimura, and Norifumi Fujimura
Jpn. J. Appl. Phys. 55(2016), 10TA17 1-4 雑誌 2016年
Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system 査読
Masaaki Aramaki, Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura
Jpn. J. Appl. Phys. 55(2016), 10TA16 1-5 雑誌 2016年
Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films 査読
Y. Miyata, K. Ueno, Y. Togawa, T. Yoshimura, A. Ashida, and N. Fujimura
Appl. Phys. Lett. 109 (2016), 112101 1-4 雑誌 2016年
(111)SrTiO3基板上への(Ba,La)SnO3薄膜の結晶成長 査読
三浦 光平, 樫本 涼,吉 村 武, 芦田 淳, 藤村 紀文
材料 65 (2016), 638-641 雑誌 2016年
Lowering the growth temperature of strongly-correlated YbFe2O4 thin films prepared by pulsed laser deposition 査読
Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara and Norifumi Fujimura
Thin Solid Films 614(2016), 44-46 雑誌 2016年
Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 査読
Norifumi Fujimura, Takeshi Yoshimura
J. Appl. Phys. 119 (2016), 175302 1-6 雑誌 2016年
Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple 査読
Y. Matsushita, T. Yoshimura, and N. Fujimura
Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌 2015年11月
Enhancement of piezoelectric properties of BiFeO3 films for vibration energy harvesting 査読
T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami
Proc. of the Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌 2015年11月
Direct measurement of electrocaloric effect in barium titanate thin films 査読
T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami
Proc. of The Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌 2015年11月
Piezoelectric MEMS vibrational energy harvester using BiFeO3 films 査読
T. Yoshimura, S. Murakami, K. Kariya, and N. Fujimura
Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌 2015年11月
Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking 査読
Ali M. Eltanany, T. Yoshimura, N. Fujimura, Nour Z. Elsayed, Mohamed R. Ebied and Mohamed G. S. Ali
Japanese Journal of Applied Physics 雑誌 応用物理学会 54 2015年09月
Growth and characterization of (1 − x)BiFeO3–x(Bi0.5,K0.5)TiO3 thin films 査読
Jin Hong Choi, Takeshi Yoshimura and Norifumi Fujimura
Japanese Journal of Applied Physics 雑誌 54 2015年09月
Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system 査読
Yusuke Miyata, Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura
J. Crystal Growth 雑誌 Elsevier 425 158 - 161 2015年09月
Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures 査読
H. Yamada, T. Yoshimura and N. Fujimura
Journal of Applied Physics 雑誌 117 2015年06月
Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top slscrtodes in PbLaZrTiOx capacitors 査読
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
International Journal Material Reserch 雑誌 106 83 - 87 2015年04月
The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties 査読
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
Material Research Soc. Simp. Proseedings 雑誌 1729 2015年04月
Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors 査読
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
Japanese Journal of Applied Physics 雑誌 54 2015年04月
Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors 査読
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima and H. Iwai
Japanese Journal of Applied Physics 雑誌 2015年
Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing 査読
Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, H. Iwai, and R. Shishido
Proc. 2015 IEEE ISAF/ISIF/PFM 2015年
Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple 査読
Y. Matsushita, T. Yoshimura, and N. Fujimura
Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌 2015年
The output power of piezoelectric MEMS vibration energy harvesters under random oscillations
K Kariya, T Yoshimura, S Murakami and N Fujimura
Journal of Physics: Conference Series 雑誌 557 2014年11月
Enhancement of piezoelectric properties of (100)-orientated BiFeO3 films on (100)LaNiO3/Si 査読
Kento Kariya, Takeshi Yoshimura, Shuichi Murakami and Norifumi Fujimura
Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics 53 ( 9s ) 2014年09月
Piezoelectric properties of (100) orientated BiFeO3 thin films on LaNiO3 査読
Kento Kariya, Takeshi Yoshimura, Shuichi Murakami and Norifumi Fujimura
Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics 53 ( 8S3 ) 2014年08月
Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer 査読
Yoko Takada,Toru Tsuji,Naoki Okamoto,Takeyasu Saito,Kazuo Kondo,Takeshi Yoshimura,Norifumi Fujimura,Koji Higuchi,Akira Kitajima,Akihiro Oshima
Materials in Electronics Journal of Materials Science 925 ( 5 ) 2155 - 2161 2014年05月
Improved reliability properties of (Pb,La) (Zr,Ti)O3 ferroelectric capacitors by thin aluminium-doped zinc oxide buffer layer 査読
Y.Takada, T.Tsuji, N.Okamoto, T.Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima
Electronics Letters IEEE 50 ( 11 ) 799 - 801 2014年05月
Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition 査読
T. Nakamura, T. Yoshimura, A. Ashida, N. Fujimura
Thin Solid Films Elsevier 559 88 - 91 2014年05月
Correlation between the intra-atomic Mn3+ photoluminescence and antiferromagnetic transition in an YMnO3 epitaxial film 査読
Masaaki Nakayama, Yoshiaki Furukawa, Kazuhiro Maeda, Takeshi Yoshimura, Hiroshi Uga, Norifumi Fujimura
Applied Physics Express The Japan Society of Applied Physics 7 2014年02月
Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films 査読
K. Ujimoto, T. Yoshimura, K. Wakazono,A. Ashida,N. Fujimura
Thin Solid Films Elsevier 550 738 - 741 2014年01月
Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO3 ferroelectric film 査読
S Murakami, T Yoshimura, K Satoh, K Wakazono, K Kariya and N Fujimura
Journal of Physics:Conference Series Elsevier 476 2013年12月
Enhancement of Direct Piezoelectric Properties of Domain-Engineered(100)BiFeO3 Films 査読
Takeshi Yshimura,Katsuya Ujimoto,Yusaku Kawahara,keisuke Wakazono,Kento Kariya,Norifumi Fujimura,Syuichi Murakami
Japanese Journal of Applied Physics The Japan Society of Applied Physics 52 2013年09月
Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes 査読
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 IEEE 6748710 360 - 362 2013年07月
Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes 査読
T. Saito, Y. Takada, T. Tsuji, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 IEEE 6748734 205 - 207 2013年07月
ナノチャネルを有する強誘電体ゲート薄膜トランジスタの作製とその電気特性評価 査読
野村侑平,吉村武,藤村紀文
Journal of the Vacuum Society of Japan 日本真空学会 56 ( 5 ) 172 - 175 2013年05月
Piezoelectric vibrational energy harvester using lead-free ferroelectric BiFeO3 films 査読
T. Yoshimura, S. Murakami, K. Wakazono, K. Kariya, N. Fujimura
Appl. Phys. Express The Japan Society of Applied Physics 6 ( 5 ) 051501 1 - 4 2013年05月
Effects of La substitution for BiFeO3 epitaxial thin films 査読
K. Wakazono, Y. Kawahara, K. Ujimoto, T. Yoshimura, N. Fujimura
Journal of the Korean Physical Society Korean Phys. Soc. 62 ( 7 ) 1069 - 1072 2013年04月
Effect of the annealing temperature of P(VDF/TrFE) thin films on their ferroelectric properties 査読
Y. Yachi, T. Yoshimura, N. Fujimura
Journal of the Korean Physical Society Korean Phys. Soc. 62 ( 7 ) 1065 - 1068 2013年04月
有機強誘電体を用いた磁性半導体Si:Ce薄膜の電界効果 査読
宮田祐輔,高田浩史,奥山祥孝,吉村武,藤村紀文
Journal of the Vacuum Society of Japan 日本真空学会 ( 56 ) 136 - 138 2013年04月
Effect of target surface microstructure on morphological and electrical properties of pulsed-laser-deposited BiFeO3 epitaxial thin films 査読
K. Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 52 ( 4 ) 045803 1 - 5 2013年04月
Electrical properties of sol-gel derived PbLaZrTiOx capacitors with nonnoble metal oxide top electrodes 査読
Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima
Electrochemical Society Transactions The Electrochemical Society 50 ( 34 ) 43 - 48 2013年03月
Orientation control of ZnO films deposited using nonequilibrium atmospheric pressure N2/O2 plasma 査読
Y. Nose, T. Nakamura, T. Yoshimura, A. Ashida, T. Uehara, N. Fujimura
Jpn. J. Appl. Phys. Special Issue The Japan Society of Applied Physics 52 ( 1 ) 01AC03 1 - 3 2013年01月
Investigation of gas sensing characteristics of TiO2 nanotube channel field-effect transistor 査読
M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 51 ( 11 ) 11PE10 1 - 3 2012年11月
Effect of ferroelectric polarization on carrier transport in controlled polarization type ferroelectric gate field-effect transistors with P(VDF-TeFE)/ZnO heterostructure 査読
H. Yamada, T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 51 ( 11 ) 11PB01 1 - 4 2012年11月
Control of crystal structure of BiFeO3 epitaxial thin films by the growth condition and piezoelectric properties 査読
Y. Kawahara, K. Ujimoto, T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys.(Ferroelectric Materials Their Applications) The Japan Society of Applied Physics 51 ( 9 ) 09LB04 1 - 5 2012年09月
Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel 査読
H. Yamada, T. Yoshimura, N. Fujimura
2012 MRS Spring Meeting Proceedings MRS 2012年04月
Direct piezoelectric properties of (100) and (111) BiFeO3 epitaxial thin films 査読
K. Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura
Appl. Phys. Lett. American Institute of Physics 100 102901 1 - 3 2012年03月
Local pH control by electrolysis for ZnO epitaxial deposition on a Pt cathode 査読
S. Yagi, Y. Kondo, Y. Satake, A. Ashida, N. Fujimura
Electrochimica Acta Elsevier 62 2012年02月
Direct piezoelectricity of PZT films and application to vibration energy harvesting 査読
H. Miyabuchi, T. Yoshimura, N. Fujimura
Journal of the Korean Physical Society Korean Phys. Soc. 59 ( 3 ) 2524 - 2527 2011年09月
Characterization of field effect transistor with TiO2 nanotube channel fabricated by dielectrophoresis 査読
M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N.Fujimura
IOP Conf. Series: Materials Science and Engineering IOP 18 082019 1 - 4 2011年09月
Characterization of direct piezoelectric properties for vibration energy harvesting 査読
T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida, N. Fujimura
IOP Conf. Series: Materials Science and Engineering IOP 18 092026 1 - 4 2011年09月
ZnO crystal growth on microelectrode by electrochemical deposition method 査読
Y. Kondo, A. Ashida, N. Nouzu, N. Fujimura
IOP Conf. Series: Materials Science and Engineering IOP 18 092043 1 - 4 2011年09月
Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO3 epitaxial thin films 査読
K. Ujimoto, H. Izumi, T. Yoshimura, A. Ashida, N. Fujimura
IOP Conf. Series: Materials Science and Engineering IOP 18 092064 1 - 4 2011年09月
Characterization of direct piezoelectric effect in 31 and 33 modes for application to vibration energy harvester 査読
H. Miyabuchi, T. Yoshimura, S. Murakami, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 50 ( 9 ) 2011年09月
Effect of ferroelectric polarization domain structure on electronic transport property of ferroelectric ZnO heterostructure 査読
H. Yamada, T. Fukushima, T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 50 ( 9 ) 2011年09月
Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma 査読
R. Hayakawa, M. Yoshida, K. Ide, Y. Yamashita, H. Yoshikawa, K. Kobayashi, S. Kunugi, T. Uehara, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 110 2011年09月
Ce-induced reconstruction of Si(001) surface structures 査読
D. Shindo, S. Sakurai, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 50 ( 6 ) 065701 1 - 4 2011年06月
Initial growth process in electrochemical deposition of ZnO 査読
A. Ashida, N. Nouzu, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 50 ( 5 ) 05FB12 1 - 3 2011年05月
Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration 査読
T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima, A. Oshima
Electronics Letters IET 47 ( 8 ) 486 - 487 2011年04月
Impedance analysis of controlled-polarization-type ferroelectric-gate thin film transistor using resistor-capacitor lumped constant circuit 査読
T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 50 ( 4 ) 04DD16 1 - 4 2011年04月
Electronic transport property of a YbMnO3/ZnO heterostructure 査読
H. Yamada, T. Fukushima, T. Yoshimura, N. Fujimura
Journal of the Korean Physical Society Korean Phys. Soc. 58 ( 4 ) 792 - 796 2011年04月
Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films 査読
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
J. Crystal Growth Elsevier 318 516 - 518 2011年03月
酸化亜鉛の最先端技術と将来 査読
藤村紀文
酸化亜鉛の最先端技術と将来 シーエムシー出版 2011年01月
Fabrication and magneto-transport properties of Zn0.88-xMgxMn0.12O/ZnO heterostructures grown on ZnO single-crystal substrates 査読
K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura
Advances in Science and Technology Trans Tech Publications Inc. 75 2010年10月
Local piezoelectric and conduction properties of BiFeO3 epitaxial thin films 査読
K. Ujimoto, T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys., Ferroelectric Materials Their Applications The Japan Society of Applied Physics 49 ( 9 ) 2010年09月
Ferroelectric properties of magnetoferroelectric YMnO3 epitaxial films at around the neel temperature 査読
T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura
Key Engineering Materials Trans Tech Publications Inc. 445 144 - 147 2010年07月
Dielectric behavior of YMnO3 epitaxial thin film at around magnetic phase transition temperature 査読
K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura
Advances in Science and Technology Trans Tech Publications Inc. 67 176 - 181 2010年06月
The effects of aluminum doping for the magnetotransport property of Si:Ce thin films 査読
D. Shindo, K. Fujii, T. Terao, S. Sakurai, S. Mori, K. Kurushima, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 107 ( 9 ) 09C308 1 - 3 2010年05月
Direct piezoelectric properties of Mn-doped ZnO epitaxial films 査読
T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 49 ( 2 ) 021501 1 - 3 2010年03月
Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films 査読
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Thin Solid Films Springer 518 ( 11 ) 3097 - 3100 2010年03月
Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition 査読
T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films Springer 518 ( 11 ) 2971 - 2974 2010年03月
Control of cathodic potential for deposition of ZnO by constant-current electrochemical method 査読
N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films Springer 518 ( 11 ) 2957 - 2960 2010年03月
Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor 査読
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura
Thin Solid Films Springer 518 ( 11 ) 3026 - 3029 2010年03月
Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films 査読
Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura
Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology Elsevier 84 ( 5 ) 618 - 621 2009年12月
Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition method 査読
T. Saito, K. Izumi, Y. Hirota, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura
Electrochemical Society Transactions The Electrochemical Society 25 693 - 698 2009年10月
Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier 査読
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Physical Review B the American Physical Society 80 ( 12 ) 2009年09月
Polarization switching behavior of YMnO3 thin film at around magnetic phase transition temperature 査読
K. Maeda, T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 48 ( 9 ) 2009年09月
Electron transport properties of Zn0.88Mn0.12O/ZnO modulation-doped heterostructures 査読
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal of Vacuum Science & Technology B AIP Publishing LLC 27 ( 3 ) 1760 - 1764 2009年05月
Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction 査読
T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 48 ( 3 ) 033003 1 - 5 2009年03月
Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering 査読
H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Yoshimura, N. Fujimura
Jounal of Physics-Condensed Matter Elsevier 21 ( 6 ) 2009年02月
Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques 査読
Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura
J. Crystal Growth Elsevier 311 ( 4 ) 1117 - 1122 2009年02月
Electrical characteristics of controlled-polarization-type ferroelectric-gate field-effect transistor 査読
T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 47 ( 12 ) 8874 - 8879 2008年12月
Effects of oxygen annealing on dielectric properties of LuFeCuO4 査読
Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 47 ( 11 ) 8464 - 8467 2008年11月
Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films 査読
S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura, N. Fujimura
Applied Surface Science Elsevier 254 ( 19 ) 6248 - 6251 2008年07月
Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing 査読
Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura, N. Fujimura
Thin Solid Films Elsevier 516 ( 17 ) 5785 - 5789 2008年07月
Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si 査読
D. Shindo, T. Yoshimura, N. Fujimura
Applied Surface Science Elsevier 254 ( 19 ) 6218 - 6221 2008年07月
Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films
K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura
Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics IEEE 437 2008年05月
Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films
K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura
IEEE Trans Ultrason Ferroelectr Freq Control IEEE 55 ( 5 ) 1056 - 1060 2008年05月
Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films 査読
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 103 ( 9 ) 2008年05月
Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films 査読
K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control IEEE 55 ( 5 ) 1056 - 1060 2008年05月
Effects of spontaneous and piezoelectric polarizations on carrier confinement at the Zn0.88Mn0.12O/ZnO interface 査読
K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura, N. Fujimura
Physica Status Solidi (c) John Wiley & Sons, Inc. 5 3107 - 3109 2008年05月
Electro-optic property of ZnO:Mn epitaxial films 査読
T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Physica Status Solidi (c) John Wiley & Sons, Inc. 5 3110 - 3112 2008年05月
Spin-dependent transport in a ZnMnO/ZnO heterostructure 査読
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 103 ( 7 ) 2008年04月
Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (000(1)over-bar) single-crystal substrates(2008) 査読
K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 103 ( 4 ) 2008年02月
Multiferroic behaviors of hexagonal YMnO3 and YbMnO3 epitaxial films 査読
N. Fujimura, K. Maeda, K. Fukae, T. Yoshimura
Material Research Soc. Fall Meeting MRS 2007年12月
Effect of Bi substitution on the magnetic and dielectric properties of epitaxially-grown BaFe0.3Zr0.7O3-δ thin films on SrTiO3 substrates 査読
T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda, K. Morii
Journal of Physics and Chemistry of Solids Elsevier 68 ( 8 ) 1515 - 1521 2007年09月
Raman scattering studies on multiferroic YMnO3 査読
H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura, N. Fujimura
Journal of Physics: Condens Matter Elsevier 19 ( 36 ) 2007年09月
Spin-coupled phonons in multiferroic YbMnO3 epitaxial films by raman scattering 査読
H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura, N. Fujimura
PHONONS 2007 Journal of Physics: Conference Series Elsevier 92 2007年08月
Magnetic frustration behavior of ferroelectric ferromagnet YbMnO3 epitaxial films 査読
N. Fujimura, T. Takahashi T. Yoshimura, A. Ashida
J. Appl. Phys. AIP Publishing LLC 101 ( 9 ) 2007年05月
Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate 査読
K. Masuko, A. Ashida,T. Yoshimura, N. Fujimura
Journal of Magnetism and Magnetic Materials Elsevier 310 e711 - e713 2007年03月
Magnetic properties of low temperature grown Si:Ce thin films on (001) Si substrate 査読
T. Terao, Y. Nishimura, D. Shindo, A. Ashida, N. Fujimura
Journal of Magnetism and Magnetic Materials Elsevier 310 e726 - e728 2007年03月
The comparison of the growth models of silicon nitride ultra-thin films fabricated using atmospheric pressure plasma and radio frequency plasma 査読
M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara
J. Appl. Phys. AIP Publishing LLC 101 ( 2 ) 2007年01月
Multiferroic behaviors of YMnO3 and YbMnO3 epitaxial films (invided paper) 査読
N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida, T. Yoshimura
Philosophical Magazine Letters Taylor&Francis 87 ( 41702 ) 193 - 201 2007年01月
Effect of additional oxygen for the formation of silicon oxynitride using nitrogen plasma generated near atmospheric pressure 査読
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 45 ( 12 ) 9025 - 9028 2006年12月
Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure 査読
R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa, Y. Teraoka
J. Appl. Phys. AIP Publishing LLC 100 ( 7 ) 2006年10月
Single-wall carbon nanotube field efect transistors with non-volatile memory operation 査読
T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y. Nakayama
Jpn. J. Appl. Phys. Part 2, Letters & express letters The Japan Society of Applied Physics 45 ( 37-41 ) L1036 - L1038 2006年10月
Growth and ferromagnetic properties of ferroelectric YbMnO3 thin films 査読
T. Takahashi, T. Yoshimura, N. Fujimura
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 45 ( 9B ) 7329 - 7331 2006年09月
Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition 査読
M. Nakayama, H. Tanaka, K. Masuko, T. Fukushima, A. Ashida, N. Fujimura
Applied Phys. Letters American Institute of Physics 88 ( 24 ) 2006年06月
Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure 査読
R.Hayakawa, T.Yoshimura, A.Ashida, T.Uehara, N.Fujimura
Thin Solid Films Elsevier 506-507 423 - 426 2006年04月
Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering 査読
A. Ashida, T. Nagata, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 99 ( 1 ) 2006年01月
Ferromagnetic and dielectric behavior of Mn-doped BaCoO3 査読
T. Inoue, T. Matsui, N. Fujimura , H. Tsuda, K. Morii
IEEE Transactions on Magnetics IEEE 41 ( 10 ) 3496 - 3498 2005年10月
Low-temperature growth and characterization of epitaxial YMnO3/Y2O3/Si MFIS capacitors with thinner insulator layer 査読
K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura, N. Fujimura
Jpn J. Appl. Phys. The Japan Society of Applied Physics 44 ( 9B ) 6977 - 6980 2005年09月
Enhancement of ferromagnetic ordering in dielectric BaFe1-xZrxO3 (x=0.5-0.8) single crystalline films by pulsed laser-beam deposition 査読
T. Matsui, E.. Taketani, N. Fujimura, H. Tsuda, K. Morii
J. Appl. Phys. AIP Publishing LLC 97 ( 10 ) 2005年05月
Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition 査読
Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 97 ( 8 ) 2005年04月
Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution 査読
T. Matsui, E..Taketani, H. Tuda, N. Fujimura, K. Morii
Appl. Phys. Lett.. American Institute of Physics 86 ( 8 ) 2005年02月
Analysis of nitrogen plasma generated by a pulsed plasma sysytem near atmospheric pressure 査読
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, N. Fujimura
J. Appl. Phys. AIP Publishing LLC 96 ( 11 ) 6094 - 6096 2004年12月
Interface characteristics of (Zn,Mn)O/ZnO grown on ZnO substrate 査読
A. Ashida, K. Masuko, T. Edahiro, T. Oshio, N. Fujimura
J. Crystal Growth Elsevier 275 2004年12月
Formation of silicon oxynitride films with low leakage current using N2/O2 plasma near atomospheric pressure 査読
R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, N. Fujimura
Jpn J. Appl. Phys. The Japan Society of Applied Physics 43 ( 11B ) 7853 - 7856 2004年11月
Synthesis of Bi(FexAl1-x)O3 thin films by pulsed laser deposition and its structural characterization 査読
M. Okada, T. Yoshimura, N. Fujimura
Jpn J. Appl. Phys. The Japan Society of Applied Physics 43 ( 9B ) 6609 - 6612 2004年09月
Pulsed-laser-deposited YMnO3 epitaxial films with square polarization-electric field hysteresis loop and low-temperature growth 査読
N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, N. Fujimura
Jpn J. Appl. Phys. The Japan Society of Applied Physics 43 ( 9B ) 6613 - 6616 2004年09月
Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO3 thin films on (100)SrTiO3 substrates 査読
E. Taketani, T. Matsui, N. Fujimura, K. Morii
IEEE Transactions on Magnetics Part 2 IEEE 40 ( 4 ) 2736 - 2738 2004年07月
Electro-optic effect in ZnO:Mn thin films 査読
T. Nagata, A. Ashida, N. Fujimura, T. Ito
Journal of Alloys and Compounds Elsevier 371 157 - 159 2004年05月
The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering 査読
T. Nagata, A. Ashida, N. Fujimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 95 ( 8 ) 3923 - 3927 2004年04月
P-E measurements for ferroelectric gate capacitors 査読
T. Yoshimura, N. Fujimura
Integrated Ferroelectrics Taylor&Francis 61 59 - 64 2004年02月
Optical propagation loss of ZnO films grown on sapphire 査読
A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 95 ( 4 ) 1673 - 1676 2004年02月
Influence of schottky and poole-frenkel emission on the retention property of YMnO3 based metal/ferroelectric/insulator/semiconductor capacitors 査読
D. Ito, N. Fujimura, T. Yoshimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 94 ( 6 ) 4036 - 4041 2003年09月
Polarization hysteresis loops of ferroelectric gate capacitors measured by Sawyer-tower circuit 査読
T. Yoshimura, N. Fujimura
Jpn J. Appl. Phys. The Japan Society of Applied Physics 42 ( 9B ) 6011 - 6014 2003年09月
Improvement of surface morphology and the dielectric property of YMnO3 films 査読
H. Sakata, D. Ito, T. Yoshimura, A. Ashida, N. Fujimura
Jpn J. Appl. Phys. The Japan Society of Applied Physics 42 ( 9B ) 6003 - 6006 2003年09月
Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field effect transistors 査読
D. Ito, N. Fujimura, T. Yoshimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 93 ( 9 ) 5563 - 5567 2003年05月
Effect of carrier for magnetic and magnetotransport properties of Si:Ce films 査読
T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito
J. Appl. Phys. AIP Publishing LLC 93 ( 10 ) 7679 - 7681 2003年05月
Formation of two-dimensional electron gas and the magneto-transport behavior of ZnMnO/ZnO heterostructure 査読
T. Edahiro, N. Fujimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 93 ( 10 ) 7673 - 7675 2003年05月
Magnetic properties of highly resistive BaFeO3 thin films epitaxially grown on SrTiO3 single crystal substrates 査読
T. Matsui, E. Taketani, N. Fujimura, T. Ito, K. Morii
J. Appl. Phys. AIP Publishing LLC 93 ( 10 ) 6993 - 6995 2003年05月
Ferromagnetic and ferroelectric behaviors of A site substituted YMnO3-based epitaxial thin films 査読
N. Fujimura, D. Ito, H. Sakata, T. Yoshimura, T. Yokota, T. Ito
J. Appl. Phys. AIP Publishing LLC 93 ( 10 ) 6990 - 6992 2003年05月
Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films 査読
T. Yokota, N. Fujimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 93 ( 7 ) 4045 - 4048 2003年04月
Magnetic and dielectric properties of epitaxially grown BaFeO3 thin films on SrTiO3 single crystal substrates 査読
T. Matsui, H. Tanaka, E. Taketani, N. Fujimura, T. Ito, K. Morii
J. Korean Phys. Soc. Korean Phys. Soc. 42 S1378 - S1381 2003年04月
The effect of leakage current on the retention property of YMnO3 based MFIS capacitor 査読
D. Ito, N. Fujimura, T. Ito
Integrated Ferroelectrics Taylor&Francis 49 41 - 49 2002年12月
Crystal growth and interface characterization of dielectric BaZrO3 thin films on Si substrates 査読
T. Matsui, Y. Kitano, N. Fujimura, K. Morii, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 41 ( 11B ) 6639 - 6642 2002年11月
Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor: Si1-xCex films 査読
T, Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito
Appl. Phys. Lett.. American Institute of Physics 81 ( 21 ) 4023 - 4025 2002年11月
Electro-optic effect in epitaxial ZnO:Mn thin films 査読
T. Nagata, A. Ashida, Y. Takagi, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 41 ( 11B ) 6916 - 6918 2002年11月
Structural, dielectric and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates 査読
T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, K. Morii
Appl. Phys. Lett. American Institute of Physics 81 ( 15 ) 2764 - 2766 2002年10月
Thin film crystal growth of BaZrO3 at low oxygen partial pressure 査読
Y. Kitano, T. Matsui, N. Fujimura, K. Morii, T. Ito
Journal of Crystal Growth Elsevier 243 ( 1 ) 164 - 169 2002年08月
Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy 査読
T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito
J. Appl. Phys. AIP Publishing LLC 91 ( 10 ) 7905 - 7907 2002年05月
Retention property analysis of epitaxially grown YMnO3/Y2O3/Si capacitor 査読
D. Ito, N. Fujimura, K. Kakuno, T. Ito
Ferroelectrics Taylor&Francis 271 1677 - 1682 2002年04月
Electro-optic property of ZnO:X (X=Li,Mg) thin films 査読
T. Nagata, A. Ashida, N. Fujimura, T. Ito
Journal of Crystal Growth Elsevier 237 533 - 537 2002年04月
Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by Pulsed laser deposition 査読
K. Kakuno, D. Ito, N. Fujimura, T. Matsui, T. Ito
Journal of Crystal Growth Elsevier 237 487 - 491 2002年04月
The progress of the YMnO3/Y2O3/Si system for ferroelectric gate field effect transistor 査読
N. Fujimura, D. Ito, T. Ito
Ferroelectrics Taylor&Francis 271 1819 - 1824 2002年01月
Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces 査読
T. Yamaguchi, H. Kato, N. Fujimura, T. Ito
Thin Solid Films Elsevier 396 ( 41641 ) 119 - 125 2001年09月
Ferroelectricity in Li-doped ZnO:X thin films and the application for the optical switching devices 査読
T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 40 ( 9B ) 5615 - 5618 2001年09月
Magnetic and magneto-transport properties of ZnO:Ni films 査読
T. Wakano, N. Fujimura, N. Abe, Y. Morinaga, A. Ashida, T. Ito
Physica E Elsevier 10 ( 41642 ) 260 - 264 2001年05月
Detailed Structural Analysis of Ce Doped Si Thin Films 査読
T. Yokota, N. Fujimura, Y. Morinaga and T. Ito
Physica E 雑誌 10 237 - 241 2001年05月
Magnetic properties of Er and Er,O-doped GaAs grown by organometallic vapor phase epitaxy 査読
Y. Morinaga, T. Edahiro, N. Fujimura, T. Ito, T. Koide, Y. Fujiwara, Y. Takeda
Physica E Elsevier 10 ( 41642 ) 391 - 394 2001年05月
Polarization behavior of Li-doped ZnO thin films on Si 査読
T. Shimura, N. Fujimura, T. Wakano, T. Yoshimura, T. Ito
Applied Physics A Springer 2001年01月
Preparation and ferroelectric properties of YMnO3 thin films with c-axis preferred orientation by the sol-gel method 査読
K. Tadanaga, H. Kitahata, T. minami, N. Fujimura, T. Ito
J. Sol-Gel Sci. tech. Springer 19 ( 41642 ) 589 - 593 2000年12月
Initial stage of film growth of pulsed laser deposited YMnO3 査読
D. Ito, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 39 ( 9B ) 5525 - 5527 2000年09月
Influence of reactive ion etching damage on the schottky barrier hight of Ti/p-Si interface 査読
N. Fujimura, T. Yamaguchi, H.Kato, T. Ito
Applied Surface Science Elsevier 159 186 - 190 2000年06月
Improvement of Y2O3/Si interface for FeRAM application 査読
D. Ito, T. Yoshimura, N. Fujimura, T. Ito
Appl. Sur. Sci. Elsevier 159 138 - 142 2000年06月
Purification and characterization of organic solvent-stable lipase from organic solvent-tolerant pseudomonas aeruginosa LST-03 査読
H. Ogino, S. Nakagawa, K. Shinya, T. Muto, N. Fujimura, M. Yasuda, H. Ishikawa
Journal of Bioscience and Bioengineering Elsevier 89 ( 5 ) 451 - 457 2000年05月
Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure 査読
T. Yoshimura, N. Fujimura, D. Ito, T. Ito
J. Appl. Phys AIP Publishing LLC 87 ( 7 ) 3444 - 3449 2000年04月
Effect of plasma-induced damage on initial reactions of titanium thin films on Si surface 査読
T. Yamaguchi, A. Hama, N. Fujimura, T. Ito
Appl. Phys. Lett. American Institute of Physics 76 ( 17 ) 2358 - 2360 2000年04月
Detailed structural analysis of Ce doped Si thin films 査読
T. Yokota, N. Fujimura, Y. Morinaga, T. Ito
Physica E Elsevier 10 237 - 241 2000年01月
Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide 査読
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 38 ( 9B ) 5448 - 5451 1999年09月
Ferroelectricity of YMnO3 thin films prepared via solution 査読
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Appl. Phys. Lett. American Institute of Physics 75 ( 5 ) 719 - 721 1999年08月
Preferred orientation phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films. 査読
N. Fujimura, Darin T. Thomas, Stephen K. Streiffer, Angus I. Kingon
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 37 ( 9B ) 5185 - 5188 1998年09月
Effect of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO3. 査読
T. Shimura, N. Fujimura, S. Yamamori, T. Yoshimura, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 37 ( 9B ) 5280 - 5284 1998年09月
Ferroelectric properties of c-oriented YMnO3 thin films deposited on Si substrate. 査読
T. Yoshimura, N. Fujimura, T. Ito
Appl. Phys. Lett. American Institute of Physics 73 ( 3 ) 414 - 416 1998年07月
Microstructure and dielectric properties of YMnO3 thin films prepared by dip-coating 査読
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito
Journal of American Ceramic Soc American Ceramic Soc 81 ( 5 ) 1357 - 1360 1998年05月
Growth and properties of YMnO3 thin films for non-volatile memories. 査読
T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito
Journal of the Korean Physical Society Korean Physical Society 32 S1632 - S1635 1998年02月
Preparation and dielectric properties of YMnO3 ferroelectric thin films by sol-gel method. 査読
K. Tadanaga, H. Kitahata, T. Minami, N. Fujimura, T. Ito
Journal of Sol-Gel Science and Technology Springer 13 ( 41642 ) 903 - 907 1998年01月
YMnO3 thin films prepared from solutions for non-volatile memory devices. 査読
N. Fujimura, H.Tanaka, H.Kitahata, K.Tadanaga, T. Ito, T. Minami
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 36 ( 12A ) L1601 - L1603 1997年12月
Mechanism for ordering in SiGe films with reconstructed surface. 査読
T. Araki, N. Fujimura, T. Ito
Appl. Phys. Lett. American Institute of Physics 71 ( 9 ) 1174 - 1176 1997年09月
Fabrication of YMnO3 thin films on Si substrates by a pulsed laser deposition method. 査読
T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 36 ( 9B ) 5921 - 5924 1997年09月
The stability of ordered structures in SiGe films examined by strain energy calculations. 査読
T. Araki, N. Fujimura, T. Ito
J. Crystal Growth Elsevier 174 ( 41643 ) 675 - 679 1997年04月
Effect of Ce doping on the growth of ZnO thin films. 査読
Y. Morinaga, K. Sakuragi, N. Fujimura, T. Ito;
J. Crystal Growth Elsevier 174 ( 41643 ) 691 - 695 1997年04月
Formation of YMnO3 films drectly on Si substrate. 査読
N. Aoki, N. Fujimura, T. Yoshimura, T. Ito
J. Crystal Growth Elsevier 174 ( 41643 ) 796 - 800 1997年04月
The initial stage of BaTiO3 epitaxial films on etched and annealed SrTiO3 substrate. 査読
T. Yoshimura, N. Fujimura, T. Ito
J. Crystal Growth Elsevier 174 ( 41643 ) 790 - 795 1997年04月
Growth mechanism of YMnO3 film as a new candidate for non-volatile memory devices. 査読
N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 80 ( 12 ) 7084 - 7088 1996年12月
Structural characterization of ordered SiGe films grown on Ge (100) and Si (100) substrate. 査読
T. Araki, N. Fujimura, T. Ito, A. Wakahara, A. Sasaki
J. Appl. Phys. AIP Publishing LLC 80 ( 7 ) 3804 - 3807 1996年10月
Epitaxially grown YMnO3 film: new candidate for non-volatile memory devices. 査読
N. Fujimura, T. Ishida, T. Yoshimura, T. Ito
Applied Physics Letter American Institute of Physics 69 ( 12 ) 1011 - 1013 1996年08月
Epitaxial growth of BaTiO3 thin films and their internal stress. 査読
S.T.Lee, N. Fujimura, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 34 ( 9B ) 5168 - 5171 1995年09月
Epitaxial orientation control of LiTaO3 film and interfacial coulomb's potential . 査読
N. Fujimura, H. Tsuboi, T. Ito
Jpn. J. Appl. Phys. The Japan Society of Applied Physics 34 ( 9B ) 5163 - 5167 1995年09月
Orientation control of (Ca, Sr)CuO2 thin films. 査読
S. Nagai, H. Tanaka, N. Fujimura, T. Ito
J. Appl. Phys. AIP Publishing LLC 77 ( 8 ) 3805 - 3811 1995年04月
(115) Bi2Sr2CuOx epitaxial films on (110) SrTiO3 by solid phase epitaxy. 査読
S. Nagai, N. Fujimura, H. Tanaka, T. Ito
J. Crystal Growth Elsevier ( 41641 ) 65 - 71 1994年06月
LiNbO3 film with a new epitaxial orientation on R-cut sapphire. 査読
N. Fujimura, M. Kakinoki, H. Tsuboi, T. Ito
J.Appl.Phys. AIP Publishing LLC 75 ( 4 ) 2169 - 2179 1994年02月
Epiatxial growth and structural characterization of erbium silicide formed on (100) Si through a solid-phase reaction. 査読
Y.K. Lee, N. Fujimura, T. Ito, N. Itoh
J. Crystal Growth Elsevier 134 ( 41702 ) 247 - 254 1993年12月
An X-ray analysis of domain structure in epitaxial YSi2-x films grown on (100) Si substrate. 査読
Y.K. Lee, N. Fujimura, T. Ito , N. Itoh
Nano-structured Materials Elsevier 2 603 - 604 1993年11月
Control of preferred orientation for ZnOx films: control of self-texture. 査読
N. Fujimura, T. Nishihara, S. Goto, J. Xu, T. Ito
J. Crystal Growth Elsevier 130 ( 41641 ) 269 - 279 1993年05月
Epitaxial growth of yttrium silicide YSi2-x on (100)Si. 査読
Y.K.Lee, N. Fujimura, T. Ito
Journal of Alloys and Compounds Elsevier 193 ( 41641 ) 289 - 291 1993年03月
Structural control of non-equilibrium WSi2.6 thin film by external stress. 査読
N.Fujimura, S.Tachibana, N.Hosokawa , and T.Ito
J. Appl. Phys. AIP Publishing LLC 73 ( 2 ) 733 - 739 1993年01月
Effects of interfacial energy on the epitaxial growth of LiNbO3. (in Japanese) 査読
T. Ito, N. Fujimura, M. Kakinoki
Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会 39 105 - 108 1992年02月
Orientation control of the Bi2Sr2CuOx thin films. -Self texture and epiraxy- (in Japanese) 査読
S. Nagai, H. Tanaka, N. Fujimura, T. Ito
Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会 39 744 - 747 1992年02月
The crystallization and growth of the High-Tc phase in Bi-Sr-Ca-Cu-O thin films. 査読
S. Nagai, N. Fujimura, T. Ito
J. Crystal Growth Elsevier 115 ( 41643 ) 769 - 773 1991年12月
Heteroepitaxy of LiNbO3 and LiNb3O8 thin films on C-cut sapphire
N.Fujimura, T. Ito, M. Kakinoki
J. Crystal Growth Elsevier 115 ( 41643 ) 821 - 825 1991年12月
Heteroepitaxy of zinc-oxide thin-films, considering nonepitaxial preferential orientation 査読
S. Goto, N. Fujimura, T. Nishihara, T. Ito
J. Crystal Growth Elsevier 115 ( 41643 ) 816 - 820 1991年12月
Annealing behavior of AL-Y alloy film for interconnection conductor in microeletronic devices 査読
Y.K. Lee, N. Fujimura, T. Ito, N. Nishida
Journal of Vacuum Science & Technology B AIP Publishing LLC 9 ( 5 ) 2542 - 2547 1991年09月
Formation of the High-Tc phase in Pb-free Bi-Sr-Ca-Cu-O thin film
S. Nagai, N. Fujimura, T. Ito, K. Shiraishi
Jpn. J. Appl. Phys, The Japan Society of Applied Physics 30 ( 5A ) L826 - L829 1991年05月
A candidate for interconnection material; Al-Y alloy thin films
S. Nagai, N. Fujimura, T. Ito, K. Shiraishi
Materials Letters Elsevier 10 ( 7-8 ) 344 - 347 1991年01月
Structural, electrical and optical characterization of sputtered ZnOx thin film
T. Nishihara, N. Fujimura, T. Ito
Transactions of Material Research Soc.Japan 日本MRS 1 200 - 204 1990年12月
Influence of external stress for non-equilibrium thin films
N. Fujimura, S. Tachibana, T. Ito
Transactions of Material Research Soc.Japan 日本MRS 1 205 - 210 1990年12月
Solid phase reactions and change in stress of TiN/Ti/Si for a diffusion barrier
N. Fujimura, T. Matsui, T. Ito, Y. Nakayama
J. Appl. Phys, AIP Publishing LLC 67 ( 6 ) 2899 - 2903 1990年03月
The application of ZnOx thin films for the transparent conducting films and the SAW devices.(in Japanese)
N. Fujimura, S. Goto, T. Nishihara, T. Ito
Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会 37 12 - 16 1990年01月
The phase transformation and the behavior of excess atoms in Bi system superconducting thin films. (in Japanese)
S. Nagai, N. Fujimura, T. Ito
Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会 37 99 - 102 1990年01月
The formation of LiNbO3 thin films. (in Japanese)
M. Kakinoki, K. Ando, N. Fujimura, T. Ito
Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会 37 17 - 22 1990年01月
Characterization of Si-rich WSix on Si
N. Fujimura, S. Tachibana, T. Ito
Applied Surface Science Elsevier 41-42 286 - 289 1989年11月
TiSi2 formation at the Ti-rich TiNx/Si interface
N. Fujimura, T. Ito
Applied Surface Science Elsevier 41-42 272 - 276 1989年11月
Effects of texture in the titanium layer on solid state reactions for Al/Ti/Si and Al/TiN/Ti/Si system
N. Fujimura, N. Nishida, T. Ito, Y. Nakayama
Materials Science and Engineering Elsevier 108 153 - 157 1989年02月
Silicide formation in the Pt/a-Si:H system
T. Ito, N. Fujimura, Y. Nakayama
Thin Solid Films Elsevier 167 ( 1-2 ) 187 - 194 1988年12月
Dissolution pits and Si epitaxial regrowth in the Al/(111)Si system
N. Fujimura, H. Kurosaki, T. Ito, Y. Nakayama
J. Appl. Phys AIP Publishing LLC 64 ( 9 ) 4499 - 4502 1988年11月
Structural change of a-Si:H by annealing
T. Ito, N. Fujimura, Y. Nakayama
Transactions of Japan Institute of Metals 日本金属学会 29 187 - 190 1988年03月
Structural characterization of Cu-Cr flms
T. Ito, N. Fujimura, N. Nishida, T. Kanemura, Y. Nakayama
Materials Letters Elsevier 6 41 - 44 1987年11月
Change in film stress of a-Si:H by annealing
T. Ito, N. Fujimura, Y. Nakayama
Transactions of Japan Institute of Metals 日本金属学会 27 789 - 790 1986年10月
Reactions between Ti and Al films on a-Si:H
T. Ito, N. Fujimura, Y. Nakayama
Materials Letters Elsevier 4 350 - 352 1986年08月
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応用物理学会春季学術講演会講演予稿集(CD-ROM) 69th 2022年( ISSN:2436-7613 )
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応用物理学会春季学術講演会講演予稿集(CD-ROM) 69th 2022年( ISSN:2436-7613 )
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日本セラミックス協会年会講演予稿集(Web) 2021 2021年
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応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020年( ISSN:2436-7613 )
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応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020年( ISSN:2436-7613 )
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応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019年( ISSN:2436-7613 )
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応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019年( ISSN:2436-7613 )
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部局内役職
研究推進機構 協創研究センター
センター長 2022年04月 - 継続中
部局内役職
研究推進機構
副機構長 2022年04月 - 継続中
全学管理職
大阪公立大学
副学長 2022年04月 - 継続中