2023/05/30 更新

写真a

フジムラ　ノリフミ
藤村　紀文
FUJIMURA Norihumi
担当
大学院工学研究科 電子物理系専攻 教授
工学部 電子物理工学科
職名
教授
所属
工学研究院
連絡先
メールアドレス
ホームページ
http://www.pe.osakafu-u.ac.jp/device7/
所属キャンパス
中百舌鳥キャンパス

担当・職階

  • 大学院工学研究科 電子物理系専攻 

    教授  2022年04月 - 継続中

  • 工学部 電子物理工学科 

    教授  2022年04月 - 継続中

取得学位

  • 博士（工学） （ 大阪府立大学 ）

研究分野

  • ものづくり技術（機械・電気電子・化学工学） / 電気電子材料工学  / 機能デバイス物性

研究概要

  • 磁性半導体と磁性強誘電体を用いた不揮発性論理演算素子の開発

  • 分極を用いて高機能化したMOSFETの開発

  • 磁性半導体の作成とその物性

  • マルチフェロイック

  • 大気圧プラズマを用いた新機能物質の作成

  • 強誘電体と圧電体を用いたトランジスタの開発

  • 強誘電体と磁性半導体を用いたトランジスタの開発

  • 磁性半導体の物性

  • 磁性強誘電体の作製とその物性

  • 強誘電体ゲートトランジスタの開発

  • 強誘電体ゲートトランジスタの物性

研究歴

  • 　

    自発分極、強誘電体、電界効果、トランジスタ 

  • 　

    マルチフェロイック、磁性半導体、磁性強誘電体 

  • 　

    大気圧プラズマ、酸化物、窒化物、MOSFET 

  • 　

    強誘電体、圧電体、トランジスタ 

  • 　

    強誘電体、磁性半導体、不揮発性メモリ、論理演算素子 

  • 　

    半導体、磁性、磁性半導体 

  • 　

    強誘電体、磁性 

  • 　

    強誘電体、トランジスタ 

  • 　

    強誘電体、トランジスタ 

所属学協会

  • 日本セラミックス協会

    1995年04月 - 継続中

  • Materials Research Soc.

    1994年04月 - 継続中

  • 日本金属学会

    1984年04月 - 継続中

  • 応用物理学会

    1984年04月 - 継続中

委員歴（学外）

  • 参与   一般財団法人大阪科学技術センター  

    2021年04月 - 2024年06月 

  • Board Member   Journal of Advanced Dielectrics (JAD)  

    2021年04月 - 2022年03月 

  • 上級エリアコーディネーター   関西イノベーションイニシアティブ  

    2021年04月 - 2022年03月 

  • 座長   堺市　NAKAMOZU イノベーションコア創出コンソーシアム  

    2021年04月 - 2022年03月 

  • Board Member   Journal of Advanced Dielectrics (JAD)  

    2020年04月 - 2021年03月 

  • 上級エリアコーディネーター   関西イノベーションイニシアティブ  

    2020年04月 - 2021年03月 

  • 座長   堺市　NAKAMOZU イノベーションコア創出コンソーシアム  

    2020年04月 - 2021年03月 

  • 理事・副会長   日本誘電体学会(The Dielectric Society of Japan, DESJ)  

    2019年04月 - 2020年03月 

  • Chair of organizing committee   11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  

    2019年04月 - 2020年03月 

  • Program committee   Compound Semiconductor Week 2019  

    2019年04月 - 2020年03月 

  • 学外審査委員   兵庫県立大学  

    2019年04月 - 2020年03月 

▼全件表示

受賞歴

  • 岡崎清賞

    2021年06月   フルラス・岡崎記念会  

    　詳細を見る

    受賞国：日本国

  • 平成30年度 日本材料学会論文賞

    2019年05月   日本材料学会  

    　詳細を見る

    受賞国：日本国

  • 第10回集積化MEMSシンポジウム　優秀論文賞

    2019年03月   応用物理学会  

    　詳細を見る

    受賞国：日本国

  • ＪＪＡＰ編集貢献賞

    2005年04月   応用物理学会  

  • 日本金属学会奨励賞

    1993年12月   日本金属学会  

論文

  • Unusual selective monitoring of N,N-dimethylformamide in a two-dimensional layered field-effect transistor

    A. Fukui, K. Matsuyama, H. Onoe, S. Itai, H. Ikeno, S. Hiraoka, K. Hiura, Y. Hijikata, J. Pirillo, T. Nagata, K. Takei, T. Yoshimura, N. Fujimura, D. Kiriya

    ChemRxiv   2023年01月

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    共著区分：共著  

    DOI： 10.26434/chemrxiv-2023-l8440

  • Selective isolation of mono to quad layered 2D materials via sonication-based solution engineering

    T. Nakamoto, K. Matsuyama, T. Yoshimura, N. Fujimura, D. Kiriya

    ChemRxiv   2022年12月

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    共著区分：共著  

    DOI： 10.26434/chemrxiv-2022-lgp8l

  • Enhanced Performance on Piezoelectric MEMS Vibration Energy Harvester by Dynamic Magnifier under Impulsive Force 査読

    Sengsavang Aphayvong, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura and Takeshi Yoshimura

    Applied Physics Letters   121 ( 17 )   172902 - 172902   2022年10月

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    共著区分：共著  

    DOI： 10.1063/5.0116838

  • Strong photoluminescence enhancement in molybdenum disulfide in aqueous media 査読

    Kimura Daisuke, Yotsuya Shotaro, Yoshimura Takeshi, Fujimura Norifumi, Kiriya Daisuke

    Langmuir   38 ( 43 )   13048 - 13054   2022年10月

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    共著区分：共著  

    DOI： 10.1021/acs.langmuir.2c01601

  • Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

    Keigo Matsuyama, Ryuya Aoki, Kohei Miura, Akito Fukui, Yoshihiko Togawa, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ACS Applied Materials and Interfaces   14 ( 6 )   8163 - 8170   2022年02月（ ISSN:1944-8244 ）

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    掲載種別：研究論文（学術雑誌）  

    Carrier modulation in transition-metal dichalcogenides (TMDCs) is of importance for applying electronic devices to tune their transport properties and controlling phases, including metallic to superconductivity. Although the surface charge transfer doping method has shown a strong modulation ability of the electronic structures in TMDCs and a degenerately doped state has been proposed, the details of the electronic states have not been elucidated, and this transport behavior should show a considerable thickness dependence in TMDCs. In this study, we characterize the metallic transport behavior in the monolayer and multilayer MoS2 under surface charge transfer doping with a strong electron dopant, benzyl viologen (BV) molecules. The metallic behavior transforms to an insulative state under a negative gate voltage. Consequently, metal-insulator transition (MIT) was observed in both monolayer and multilayer MoS2 correlating with the critical conductivity of order e2/h. In the multilayer case, the BV molecules strongly modulated the topmost surface layer in the bulk MoS2; the transfer characteristics suggested a crossover from a heterogeneously doped state with a doped topmost layer to doping in the deep layers caused by the variation in the gate voltage. The findings of this work will be useful for understanding the device characteristics of thin-layered materials and for applying them to the controlling phases via carrier modulation.

    DOI： 10.1021/acsami.1c22156

    PubMed

  • Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique.

    Akito Fukui, Yuki Aoki, Keigo Matsuyama, Hisashi Ichimiya, Ryo Nouchi, Kuniharu Takei, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    Nanotechnology   2021年11月

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    掲載種別：研究論文（学術雑誌）   国際・国内誌：国際誌  

    Graphene nanoribbon (GNR)-based materials are a promising device material because of their potential high carrier mobility and atomically thin structure. Various approaches have been reported for preparing the GNR-based materials, from bottom-up chemical synthetic procedures to top-down fabrication techniques using lithography of graphene. However, it is still difficult to prepare a large-scale GNR-based material. Here, we develop a procedure to prepare a large-scale GNR network using networked single-layer inorganic nanowires. Vanadium pentoxide (V2O5) nanowires were assembled on graphene with an interfacial layer of a cationic polymer via the electrostatic interaction. A large-scale nanowire network can be prepared on graphene and is stable enough for applying an oxygen plasma. Using plasma etching, a networked graphene structure can be generated. Removing the nanowires results in a networked flat structure whose both surface morphology and Raman spectrum indicate a GNR networked structure. The field-effect device indicates the semiconducting character of the GNR networked structure. This work would be useful for fabricating a large-scale GNR-based material as a platform for GNR junctions for physics and electronic circuits.

    DOI： 10.1088/1361-6528/ac3615

    PubMed

  • Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique 査読

    A. Fukui†, Y. Aoki†, K. Matsuyama, H. Ichimiya, R. Nouchi, K. Takei, A. Ashida, T. Yoshimura, N. Fujimura, D. Kiriya († Equal contribution)

    Nanotechnology 雑誌 IOP Publishing   33 ( 7 )   2021年11月

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    共著区分：共著  

  • 原子層半導体と分子性化合物の融合機能化

    桐谷乃輔, 藤村紀文

    材料 雑誌 日本材料学会   70 ( 10 )   721 - 726   2021年10月

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    共著区分：共著  

  • Time-Dependent Imprint in Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> Ferroelectric Thin Films

    Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura

    Advanced Electronic Materials   7 ( 8 )   2021年08月

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    掲載種別：研究論文（学術雑誌）  

    The discovery of the HfO2-based ferroelectric films has opened new opportunities for using this silicon-compatible ferroelectric material to realize low-power logic circuits and high-density non-volatile memories. The functional performances of ferroelectrics are intimately related to their dynamic response to external stimuli, such as electric fields at finite temperatures. In the case of HfO2-based films, the time-dependent imprint and wake-up effect, which distinguish them from conventional ferroelectrics, play important roles in understanding the remaining reliability issues, such as insufficient endurance. In this study, the time-dependent imprint process is carefully investigated using Hf0.5Zr0.5O2 (HZO) films with different ferroelectric properties and defect density. The amount of redistributed charge, which causes imprint during polarization retention, is affected by the remanent polarization of the ferroelectric layer, suggesting that the depolarization field corresponding to the remanent polarization generates and works as a driving force of charge redistribution. The time-dependent measurement of the imprint distinguishes the origins of charge redistribution processes, which have different time constants. In addition, the correlation between the amount of redistributed charge and the dielectric relaxation of the HZO films is discussed. Correlations are identified between the redistributed charge and the dielectric relaxation, indicating that the mobile charge contributes to the time-dependent imprint.

    DOI： 10.1002/aelm.202100151

  • Investigation of the wake-up process and time-dependent imprint of Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> film through the direct piezoelectric response

    Kenshi Takada, Mikio Murase, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Norifumi Fujimura, Takeshi Yoshimura

    Applied Physics Letters   119 ( 3 )   2021年07月（ ISSN:0003-6951 ）

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    掲載種別：研究論文（学術雑誌）  

    Ferroelectric HfO2-based thin films, which have been attracting a great deal attention because of their potential use in various applications, are known for their unique properties, such as a large time-dependent imprint and wake-up effect, which differentiate them from conventional ferroelectric materials. In this study, direct piezoelectric measurement was employed to investigate the state of polarization during the retention and wake-up process without applying an electric field. The polarization-electric field hysteresis loop of a sputtered Hf0.5Zr0.5O2 (HZO) film with a thickness of 10 nm showed a time-dependent imprint at room temperature during polarization retention, and the internal electric field that generated the imprint gradually increased from 0.05 to 0.6 MV/cm. While a space charge density of more than 1 μC/cm2 is required to form such an internal electric field, it was found that the magnitude of the direct piezoelectric response did not change at all during polarization retention. On the other hand, both the remanent polarization and direct piezoelectric response increased during the wake-up process. Based on the difference in the variation over time of these two characteristics, we concluded that the non-ferroelectric layer exists at the interface between the HZO film and TaN electrode and gradually transitions to ferroelectric phases through the electric field cycle.

    DOI： 10.1063/5.0047104

  • Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO<inf>3</inf> ferroelectric epitaxial thin film

    K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura

    AIP Advances   11 ( 7 )   2021年07月

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    掲載種別：研究論文（学術雑誌）  

    The electron excitation mechanism and the spin accompanied by electron transition in a multiferroic YMnO3 epitaxial thin film were studied using photoluminescence (PL) spectroscopy. The thin film exhibits an intra-atomic transition of Mn3+ and the A1 optical coherent phonon. This study particularly focuses on the correlation between the electron transition corresponding to the on-site Coulomb energy and antiferromagnetic spin order. To clarify the complex excitation mechanism, the excitation energy and temperature dependences of the PL were analyzed. The key finding was that the intensities of the PL band at 1.43 eV increase as the excitation energy approaches the absorption peak energy corresponding to the on-site Coulomb energy and as the temperature decreases below 80 K, corresponding to the Néel temperature. These results suggest that the PL band is mediated by the spin-flip and relaxation processes.

    DOI： 10.1063/5.0055052

  • Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response 査読

    K Takada, M Murase, S Migita, Y Morita, H Ota, N Fujimura, T Yoshimura

    Applied Physics Letters 雑誌 米国物理学協会   119 ( 3 )   2021年07月

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    共著区分：共著  

  • Correlation between photoluminescence and antiferromagnetic spin order in strongly correlated YMnO3 ferroelectric epitaxial thin film 査読

    K. Miura, D. Kiriya, T. Yoshimura, and N. Fujimura

    AIP Advances 雑誌 American Institute of Physics   11   2021年07月

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    共著区分：共著  

  • Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation

    Yuki Yamada, Yan Zhang, Hidekazu Ikeno, Keisuke Shinokita, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya

    ACS Applied Materials & Interfaces   13 ( 21 )   25280 - 25289   2021年06月（ ISSN:1944-8244 ）

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    掲載種別：研究論文（学術雑誌）  

    DOI： 10.1021/acsami.1c04980

  • Time-Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films 査読

    Kenshi Takada, Shuya Takarae, Kento Shimamoto, Norifumi Fujimura, Takeshi Yoshimura

    Advanced Electronic Materials 雑誌 Wiley-VCH   7 ( 8 )   2021年06月

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    共著区分：共著  

  • Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation 査読

    Y. Yamada, Y. Zhang, H. Ikeno, K. Shinokita, T. Yoshimura, A. Ashida, N. Fujimura, K. Matsuda, and D. Kiriya

    ACS Applied Materials & Interfaces 雑誌 American Chemical Society   13 ( 21 )   2021年05月

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    共著区分：共著  

  • Strong Photoluminescence Enhancement from Bilayer Molybdenum Disulfide via the Combination of UV Irradiation and Superacid Molecular Treatment 査読

    Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Sciences   11 ( 8 )   3530 - 3530   2021年04月

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    掲載種別：研究論文（学術雑誌）  

    A direct band gap nature in semiconducting materials makes them useful for optical devices due to the strong absorption of photons and their luminescence properties. Monolayer transition metal dichalcogenides (TMDCs) have received significant attention as direct band gap semiconductors and a platform for optical applications and physics. However, bilayer or thicker layered samples exhibit an indirect band gap. Here, we propose a method that converts the indirect band gap nature of bilayer MoS2, one of the representative TMDCs, to a direct band gap nature and enhances the photoluminescence (PL) intensity of bilayer MoS2 dramatically. The procedure combines UV irradiation with superacid molecular treatment on bilayer MoS2. UV irradiation induces the conversion of the PL property with an indirect band gap to a direct band gap situation in bilayer MoS2 when the interaction between the top and bottom layers is weakened by a sort of misalignment between them. Furthermore, the additional post-superacid treatment dramatically enhances the PL intensity of bilayer MoS2 by a factor of 700×. However, this procedure is not effective for a conventional bilayer sample, which shows no PL enhancement. From these results, the separated top layer would show a strong PL from the superacid treatment. The monolayer-like top layer is physically separated from the substrate by the intermediate bottom MoS2 layer, and this situation would be preferable for achieving a strong PL intensity. This finding will be useful for controlling the optoelectronic properties of thick TMDCs and the demonstration of high-performance optoelectronic devices.

    DOI： 10.3390/app11083530

  • Strong Photoluminescence Enhancement from Bilayer Molybdenum Disulfide via the Combination of UV-irradiation and Superacid Molecular Treatment 査読

    Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Sciences 雑誌 MDPI   11 ( 8 )   3530 - 3530   2021年04月

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    共著区分：共著  

  • Change in the defect structure of composition controlled single-phase YbFe2O4 epitaxial thin films 査読

    K. Shimamoto, J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPB07 - SPPB07   2020年11月（ ISSN:0021-4922 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2020 The Japan Society of Applied Physics. A new type of ferroelectricity, originating from charge order and coupled to magnetism, occurs in YbFe2O4 containing triangular Fe/O double layers, which has recently generated great interest in this material. YbFe2O4 tolerates more than 10% iron deficiency even in bulk single crystals with space group R3m. Even though a large number of Fe deficiencies are introduced in the thin film form due to vaporization of Fe ions during deposition at high temperatures, the crystal structure with the space group of R3m in the films never changes within the Fe/Yb composition ratio from 1.3 to 2.2. In the previous research, the effects of the Fe/Yb composition ratio - especially in the large Fe deficient area (1.31-1.86) - on the lattice distortion and chemical bonding state of non-stoichiometric (0001)-oriented YbFe2O4 epitaxial thin films on (111) YSZ and (0001) sapphire substrates were examined. The variation of the lattice constant, Raman spectra, and optical absorption coefficient indicated that the existence of the stacking fault and the antisite Yb play an important role in the significant iron deficiency without changing the crystal structure of non-stoichiometric YbFe2O4 thin films.

    DOI： 10.35848/1347-4065/aba9b2

    その他URL： https://iopscience.iop.org/article/10.35848/1347-4065/aba9b2/pdf

  • Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films 査読

    M. Murase, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPC05 - SPPC05   2020年11月（ ISSN:0021-4922 ）

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    掲載種別：研究論文（学術雑誌）  

    For a comprehensive study of the growth mechanisms of Pb(Zr,Ti)O3 (PZT), we employed a combinatorial sputtering method that enabled us to fabricate films with composition and substrate temperature gradients in-plane. The gradient of the amount of Pb supply was created using PZT ceramic and Pb3O4 powder targets. The substrate temperature gradient was generated in an orthogonal direction by inserting a shadow mask between the heater and substrate. The PZT film was deposited on uniformly deposited (001)LaNiO3/Si in a substrate temperature range of 490 °C-570 °C. It was determined that although the growth condition of PZT films has a relatively large process window, the orientation is easily changed by the temperature and the amount of Pb supply. In addition, the range of the growth temperature, where the films show ferroelectricity decreases with decreasing the amount of Pb supply.

    DOI： 10.35848/1347-4065/abb4c0

    その他URL： https://iopscience.iop.org/article/10.35848/1347-4065/abb4c0/pdf

  • Investigation of efficient piezoelectric energy harvesting from impulsive force 査読

    S. Aphayvong, T. Yoshimura, S. Murakami, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics   59 ( SP )   SPPD04 - SPPD04   2020年11月（ ISSN:0021-4922 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2020 The Japan Society of Applied Physics. This study investigated the electromechanical properties of MEMS piezoelectric vibration energy harvesters (MEMs-pVEHs) under various impulsive forces to discuss effective harvesting energy from random vibrations. MEMS-pVEHs with different resonance frequencies with an energy conversion efficiency close to the theoretical maximum were used. The output waveforms for various impulsive force could be fitted well with the dynamic model of pVEHs. The output energy density reached 34 nJ g-1 for an impulsive force with an acceleration of 8 m s-2. To obtain high energy conversion efficiency, pVEHs should have a response time longer than the duration of the impulsive force; efficiency higher than 50% was obtained by an impulsive force with a short duration. Furthermore, the study investigated the pVEH requirements for impulsive force based on the results of numerical simulation.

    DOI： 10.35848/1347-4065/abad16

    その他URL： https://iopscience.iop.org/article/10.35848/1347-4065/abad16/pdf

  • Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide 査読

    Yuki Yamada, Keisuke Shinokita, Yasuo Okajima, Sakura N. Takeda, Yuji Matsushita, Kuniharu Takei, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Kazunari Matsuda, Daisuke Kiriya

    ACS Applied Materials & Interfaces   12 ( 32 )   36496 - 36504   2020年08月（ ISSN:1944-8244 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2020 American Chemical Society. To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer transition-metal dichalcogenides (TMDCs) are candidates for this, but their quantum yield (QY) is known to be poor. Recently, a molecular superacid treatment of bis(trifluoromethane)sulfonimide (TFSI) generated unambiguously bright monolayer TMDCs and a high QY. However, this method is highly dependent on the processing conditions and therefore has not been generalized. Here, we shed light on environmental factors to activate the photoluminescence (PL) intensity of the TFSI-treated monolayer MoS2, with a factor of more than 2 orders of magnitude greater than the original by photoactivation. The method is useful for both mechanically exfoliated and chemically deposited samples. The existence of photoirradiation larger than the band gap demonstrates enhancement of the PL of MoS2; on the other hand, activation by thermal annealing, as demonstrated in the previous report, is less effective for enhancing the PL intensity. The photoactivated monolayer MoS2 shows a long lifetime of ∼1.35 ns, more than a 30-fold improvement over the original as exfoliated. The consistent realization of the bright monolayer MoS2 reveals that air exposure is an essential factor in the process. TFSI treatment in a N2 environment was not effective for achieving a strong PL, even after the photoactivation. These findings can serve as a basis for engineering the bright atomically thin materials for 2D optoelectronics.

    DOI： 10.1021/acsami.0c09084

    PubMed

  • Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films 査読

    M. Murase, T. Yoshimura and N. Fujimura

    Japanese Journal of Applied Physics (Special Issues) 雑誌   59 ( SP )   2020年08月

    　詳細を見る

    共著区分：共著  

  • Investigation of Efficient Piezoelectric Energy Harvesting from Impulsive Force 査読

    S. Aphayvong, T. Yoshimura, S. Murakami, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics (Special Issues) 雑誌   59 ( SP )   2020年08月

    　詳細を見る

    共著区分：共著  

  • Change in the defect structure of composition controlled single-phase YbFe2O4 epitaxial thin films 査読

    K. Shimamoto, J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura and N. Fujimura

    Japanese Journal of Applied Physics (Special Issues) 雑誌   59 ( SP )   2020年08月

    　詳細を見る

    共著区分：共著  

  • Photoactivation of Strong Photoluminescence in Superacid-Treated Monolayer Molybdenum Disulfide 査読

    Y. Yamada, K. Shinokita, Y. Okajima, S. Takeda, Y. Matsushita, K. Takei, T. Yoshimura, A. Ashida, N. Fujimura, K. Matsuda and D. Kiriya

    ACS Applied Materials & Interfaces 雑誌   12 ( 32 )   2020年07月

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    共著区分：共著  

  • Investigation of the electrocaloric effect in ferroelectric polymer film through direct measurement under alternating electric field 査読

    Yuji Matsushita, Takeshi Yoshimura, Daisuke Kiriya, Norifumi Fujimura

    Applied Physics Express   13 ( 4 )   041007 - 041007   2020年04月（ ISSN:1882-0778 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2020 The Japan Society of Applied Physics. The electrocaloric (EC) effect of ferroelectric polymer film was investigated at a high frequency. The analysis used the finite element method and revealed that the extractive heat density per unit of time increases and the thermal diffusion length decreases with an increase in the frequency of the driving electric field. Given the small thermal diffusion coefficient of ferroelectric polymers, the high-frequency drive of the EC effect for ferroelectric polymer film is promising for cooling devices. To discuss the EC effect under an alternating current (AC) electric field, the EC temperature change of the vinylidene fluoride-trifluoroethylene copolymer 75/25 P(VDF-TrFE) film with a thickness of 2 μm was characterized through direct measurement using a thin-film thermocouple. The EC temperature change increases with an increase in the electric field and frequency and reached up to 0.23 °C at 1.5 MV cm-1 and 10 kHz. The extractive heat density was estimated to be as high as 0.69 W cm-2

    DOI： 10.35848/1882-0786/ab8053

    その他URL： https://iopscience.iop.org/article/10.35848/1882-0786/ab8053/pdf

  • Investigation of the electrocaloric effect in ferroelectric polymer film through direct measurement under alternating electric field 査読

    Y. Matsushita, T. Yoshimura, D. Kiriya, N. Fujimura

    Appl. Phys. Express 雑誌   13   2020年04月

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    共著区分：共著  

  • Valence states and the magnetism of Eu ions in Eu-doped GaN 査読

    Takumi Nunokawa, Yasufumi Fujiwara, Yusuke Miyata, Norifumi Fujimura, Takahiro Sakurai, Hitoshi Ohta, Akira Masago, Hikari Shinya, Tetsuya Fukushima, Kazunori Sato, Hiroshi Katayama-Yoshida

    Journal of Applied Physics   127 ( 8 )   083901 - 083901   2020年02月（ ISSN:0021-8979 ）

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    掲載種別：研究論文（学術雑誌）  

    DOI： 10.1063/1.5135743

  • Valence states and the magnetism of Eu ions in Eu-doped GaN 査読

    T.Nunokawa, Y. Fujiwara, Y. Miyata, N. Fujimura, T.Sakurai, H.Ohta, A.Masago, H.Shinya, T. Fukushima, K. Sato, H. Katayama-Yoshida

    Journal of Applied Physics 雑誌   127   2020年02月

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  • Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs 査読

    Norifumi Fujimura, Takeshi Yoshimura

    Topics in Applied Physics   131   147 - 174   2020年（ ISSN:0303-4216 ）

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    掲載種別：論文集(書籍)内論文  

    © 2020, Springer Nature Singapore Pte Ltd. Controlled-polarization-type ferroelectric-gate thin film transistors (FeTFTs), which utilize the interaction between the polarizations of a polar semiconductor and a ferroelectric layer, have been proposed. When the polarizations align head-to-head, electrons that correspond to the sum of the polarizations are induced at the interface between the polar semiconductor and the ferroelectric layer. When the semiconductor is depleted, however, the polarization in the polar semiconductor aligns in the same direction as the polarization in the ferroelectric layer, whereas the polarization of the ferroelectric layer remains stable even under a depolarization field. This chapter describes the nonvolatile operation of the controlled-polarization-type FeTFTs resulting from the ferroelectric polarization reversal.

    DOI： 10.1007/978-981-15-1212-4_8

  • Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method 査読

    Takeyasu Saito, Kaname Izumi, Yuichiro Hirota, Naoki Okamoro, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura

    ECS Transactions   25 ( 8 )   693 - 698   2019年12月

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    掲載種別：研究論文（学術雑誌）  

    DOI： 10.1149/1.3207657

    その他URL： https://iopscience.iop.org/article/10.1149/1.3207657

  • Output Power of Piezoelectric MEMS Vibration Energy Harvesters under Random Oscillation

    S. Murakami, T. Yoshimura, M. Aramaki, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura

    Journal of Physics: Conference Series   1407 ( 1 )   2019年12月（ ISSN:1742-6588 ）

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    掲載種別：研究論文（国際会議プロシーディングス）  

    © Published under licence by IOP Publishing Ltd. The output characteristics of MEMS piezoelectric vibration energy harvesters (PVEHs) under random oscillations are analysed. We fabricated cantilever-type MEMS-PVEHs using Pb(Zr,Ti)O3 films. The autocorrelation function of the transient displacement of the cantilever tip under random oscillations features a narrow-band random vibration. From the power spectral density (PSD) of the output voltage of the PVEHs, the resonance frequency decreases and the full-width at half-maximum increases with increasing vibration acceleration. By comparing output properties under various sinusoidal oscillations, nonlinear effects including the soft-spring effect and nonlinear damping effect clearly influence the output characteristics under random oscillations. The power generation is proportional to the square of the vibration acceleration even in the acceleration region where nonlinear effects become conspicuous.

    DOI： 10.1088/1742-6596/1407/1/012082

  • Quantitative analysis of the direct piezoelectric response of bismuth ferrite films by scanning probe microscopy 査読

    K. Kariya, T. Yoshimura, K. Ujimoto, N. Fujimura

    Scientific Reports 雑誌   9   2019年12月

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    共著区分：共著  

  • Quantitative analysis of the direct piezoelectric response of bismuth ferrite films by scanning probe microscopy 査読

    Kento Kariya, Takeshi Yoshimura, Katsuya Ujimoto, Norifumi Fujimura

    Scientific Reports   9 ( 1 )   2019年12月

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    掲載種別：研究論文（学術雑誌）  

    © 2019, The Author(s). Polarisation domain structure is a microstructure specific to ferroelectrics and plays a role in their various fascinating characteristics. The piezoelectric properties of ferroelectrics are influenced by the domain wall contribution. This study provides a direct observation of the contribution of domain walls to the direct piezoelectric response of bismuth ferrite (BiFeO3) films, which have been widely studied as lead-free piezoelectrics. To achieve this purpose, we developed a scanning probe microscopy-based measurement technique, termed direct piezoelectric response microscopy (DPRM), to observe the domain structure of BiFeO3 films via the direct piezoelectric response. Quantitative analysis of the direct piezoelectric response obtained by DPRM, detailed analysis of the domain structure by conventional piezoelectric force microscopy, and microscopic characterisation of the direct piezoelectric properties of BiFeO3 films with different domain structures revealed that their direct piezoelectric response is enhanced by the walls between the domains of spontaneous polarisation in the same out-of-plane direction.

    DOI： 10.1038/s41598-019-56261-w

    PubMed

    その他URL： http://www.nature.com/articles/s41598-019-56261-w

  • Fabrication of chemical composition controlled YbFe2O4 epitaxial thin films 査読

    J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   SLLB11 - SLLB11   2019年11月（ ISSN:0021-4922 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 The Japan Society of Applied Physics. The crystal growth of YbFe2O4 requires oxidant-poor conditions, thus YbFe2O4 usually contains a large number of iron deficiencies even in the bulk single crystal. The use of an ArF laser for laser ablation is effective to reduce the amount of active oxygen species and a wide process window to form the YbFe2O4 epitaxial films becomes available. By using the widened process window and an iron-rich target, the chemical composition of the YbFe2O4 epitaxial thin films is successfully controlled. The effect of the iron composition on the charge ordering transition can be discussed using the nonlinear I-V behavior. The threshold electric field changes depending on the iron composition owing to the broadening of the 3-dimensional (3D) charge order region, which affects the robustness of the 3D charge order against an electric field in YbFe2O4 thin films.

    DOI： 10.7567/1347-4065/ab3959

    その他URL： http://iopscience.iop.org/article/10.7567/1347-4065/ab3959/pdf

  • The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO2-based films 査読

    Kenshi Takada, Yuki Saho, Takeshi Yoshimura, Norifumi Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   SLLB03 - SLLB03   2019年11月（ ISSN:0021-4922 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 The Japan Society of Applied Physics. To investigate the effects of small amounts of oxygen on the crystal growth process and structural changes in HfO2-based films, film was deposited on a Si substrate using HfO2 and ZrO2 targets via RF magnetron co-sputtering with small amounts of added O2. Even when the deposition was carried out without heating, the most stable monoclinic phase mainly formed at O2 partial pressures above 1 mPa, where the sputtering maintained the oxide mode in the as-deposited state. With decreasing O2 partial pressure, the amorphous component increased. During the annealing process, the metastable tetragonal or orthorhombic phase crystallized when the amorphous film was deposited at a lower O2 partial pressure of 1 mPa. The volume fraction of the metastable phase decreased abruptly at an O2 partial pressure at which the sputtering mode changed from metal mode to oxide mode. These results indicate that the O2 partial pressure during deposition have an effect on the crystal growth process and causes structural changes in the film even after the annealing process.

    DOI： 10.7567/1347-4065/ab37cb

    その他URL： http://iopscience.iop.org/article/10.7567/1347-4065/ab37cb/pdf

  • Piezoelectric energy harvesting from AC current-carrying wire 査読

    Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura

    Japanese Journal of Applied Physics   58 ( SL )   SLLD10 - SLLD10   2019年11月（ ISSN:0021-4922 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 The Japan Society of Applied Physics. The magnetic field surrounding an AC current-carrying wire is a promising source for energy harvesting. In this study, an AC magnetic field energy harvester is developed based on the piezoelectric vibration energy harvester. A permanent magnet placed near the AC current-carrying wire vibrates by coupling with the AC magnetic field. The kinetic energy of the vibration can be converted by the piezoelectric effect. Theoretical analysis indicates that the harvester composed of a piezoelectric cantilever with a permanent magnet at the free end should be placed so that the magnet and the wire do not collide. Then, the harvester was fabricated using a piezoelectric bimorph cantilever with a mechanical quality factor of 66 and a generalized electromechanical coupling factor (K 2) of 3.1% and a neodymium magnet with a mass of 3.1 g. At an AC current of 5 Arms with a frequency of 50 Hz, an output of 1.3 mW was obtained.

    DOI： 10.7567/1347-4065/ab3e57

    その他URL： http://iopscience.iop.org/article/10.7567/1347-4065/ab3e57/pdf

  • Perspectives of Novel Applications of Ferroelectric/Piezoelectric Thin Films for Smart Systems 査読

    Norifumi Fujimura and Takeshi Yoshimura

    Materials Research Meeting 2019   2019年10月

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    共著区分：共著  

  • Fabrication of chemical composition controlled YbFe2O4 epitaxial thin films 査読

    J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. 雑誌   58   2019年08月

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    共著区分：共著  

  • Convection‐Flow‐Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface‐Charge Transfer Doping of Molybdenum Disulfide 査読

    Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya

    ChemistryOpen   8 ( 7 )   908 - 914   2019年07月（ ISSN:2191-1363 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA. Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post-silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non-destructive modulation method. Recently, a surface-charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures. The successful dopant is a neutral benzyl viologen (BV0); however, the problem remains of how to effectively prepare the BV0 molecules. A reduction process with NaBH4 in water has been proposed as a preparation method, but the NaBH4 simultaneously reacts vigorously with the water. Here, a simple method is developed, in which the reaction vial is placed on a hotplate and a fragment of air-stable metal is used instead of NaBH4 to prepare the BV0 dopant molecules. The prepared BV0 molecules show a strong doping ability in terms of achieving a degenerate situation of a TMDC, MoS2. A key finding in this preparation method is that a convection flow in the vial effectively transports the produced BV0 to a collection solvent. This method is simple and safe and facilitates the tuning of the optoelectronic properties of nanomaterials by the easily-handled dopant molecules.

    DOI： 10.1002/open.201900169

    その他URL： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/open.201900169

  • Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor 査読

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Sensors and Actuators A: Physical   291   167 - 173   2019年06月（ ISSN:0924-4247 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 Elsevier B.V. The present study reports the improvement of piezoelectric properties of sputtered BiFeO 3 films, and application to piezoelectric MEMS vibration energy harvesters (MEME-pVEHs). (100)-oriented BiFeO 3 films were obtained on (100)-oriented LaNiO 3 bottom electrodes grown on (100) Si substrates at deposition temperatures ranging from 450 °C to 550 °C. While all the films showed well-defined ferroelectric hysteresis loops at room temperature, the highest e 31,f coefficient of −3.6 C/m 2 was obtained at 500 °C. The increase of the e 31,f coefficient with increasing of the Rayleigh constant indicates the domain wall substantially contributes to the piezoelectric properties of the BiFeO 3 films. MEMS-pVEHs measuring 1 × 6 mm 2 and Si proof mass of 3.0 mg were fabricated using the BiFeO 3 film. The resonance frequency, electromechanical coupling factor, and mechanical quality factor were determined as 151.2 Hz, 0.1%, and 850, respectively. The maximum output power was 2.4 μW at 0.3 G, which is comparable with that of the best-performing MEMS-pVEHs using Pb(Zr,Ti)O 3 films.

    DOI： 10.1016/j.sna.2019.03.050

  • Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment 査読

    Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    Applied Physics Express   12 ( 5 )   051014 - 051014   2019年05月（ ISSN:1882-0778 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 The Japan Society of Applied Physics. Monolayer molybdenum disulfide's (MoS2) direct band gap nature makes it a good platform for realizing atomically thin optoelectronic devices. However, an issue is its low luminescence brightness. In this research, we demonstrate a strategy to achieve strong photoluminescence (PL) of monolayer MoS2, by treatment with a redox-active molecule, fluoranil. An important finding is that the factor of PL enhancement depends strongly on the solvent used and the PL changes by more than one order of magnitude. This work is useful for harnessing the strong optical properties of MoS2 by the combination of oxidizing molecules and engineering the solvent used.

    DOI： 10.7567/1882-0786/ab1544

    その他URL： http://iopscience.iop.org/article/10.7567/1882-0786/ab1544/pdf

  • Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules 査読

    Hisashi Ichimiya, Masahiro Takinoue, Akito Fukui, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura, Daisuke Kiriya

    ACS Applied Materials & Interfaces   11 ( 17 )   15922 - 15926   2019年05月（ ISSN:1944-8244 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 American Chemical Society. Modulating the electronic structure of semiconducting materials is critical to developing high-performance electronic and optical devices. Transition metal dichalcogenides (TMDCs) are atomically thin semiconducting materials. However, before they can be used successfully in electronic and optical devices, modulation of their carrier concentration at the nanometer scale must be achieved. Molecular doping has been successful in modulating the carrier concentration; however, the scientific approach for selective and local carrier doping at the nanometer scale is still missing. Here, we demonstrate a proof-of-concept of modulating the carrier concentration of TMDCs laterally on a scale of around 100 nm using spontaneous pattern formation of an ultrathin film consisting of molecular electron dopants. When the water made contact with the molecular film (∼10 nm), a spontaneous pattern formation was observed on both the monolayer and bulk TMDCs. We revealed that the pattern-formation dynamics and nanoscopic flow rate of the molecules were highly dependent on the thickness of the TMDCs, since the band gap varies based on the number of layers. Analyses of topographic images of the molecular patterns and photoluminescence spectra of the TMDCs indicated that the spontaneously patterned molecular films induced a local carrier doping. Our results demonstrate a spontaneous formation of a mosaic electronic structure. This work is useful for making tiny-scale electronic junctions on TMDCs and semiconducting materials to make numerous p/n junctions simultaneously for optoelectronic devices.

    DOI： 10.1021/acsami.9b03367

    PubMed

  • Time-Resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction 査読

    Norifumi Fujimura Kenshi Takada Takeshi Yoshimura

    2019 MRS Spring Meeting   2019年04月

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    共著区分：共著  

  • Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system 査読

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kensuke Kanda, Norifumi Fujimura

    Applied Physics Letters   114 ( 13 )   133902 - 133902   2019年04月（ ISSN:0003-6951 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019 Author(s). Enhancing the output power at small input acceleration is a major concern for enabling practical application of vibration energy harvesters. In this study, a two-degree of freedom system (2-DOF) was employed to solve this issue. The numerical calculations using the lumped parameter model of the piezoelectric vibration energy harvesters (pVEHs) with 2-DOF indicate that the harvesters show two resonance peak and an increase in the output power of several ten times compared with the harvester with a single degree of freedom. Based on calculations, the prototype of pVEH with 2-DOF was fabricated using a micro-machined pVEH and a metal cantilever. The output power of the harvester is 3.4 μW at 0.1 Grms, which is 17 times higher than that of the micro-electro-mechanical system-pVEH. Moreover, the resonance frequency on the pVEH with 2-DOF is easily adjusted because of the coupled vibration of the two masses.

    DOI： 10.1063/1.5093956

  • Fabrication and Characterization of (Ba,La)SnO3 Semiconducting Epitaxial Films on (111) and (001) SrTiO3 Substrates 査読

    Kohei Miura, Daisuke Kiriya, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura

    physica status solidi (a)   216 ( 5 )   1700800 - 1700800   2019年03月（ ISSN:1862-6300 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Recently, BaSnO 3 has attracted great attention as a promising transparent oxide semiconductor with a large bandgap (3.3 eV) and high mobility (320 cm 2 V −1 s −1 ), and many reports have discussed the origin of its high mobility. Specifically, its effective mass m* has been investigated with both calculations and experiments. First-principles calculations have suggested that m* is small near the Γ point and that this m* assists the high mobility. Therefore, it is quite important to study the anisotropy in the mobility of this material. However, except for (001) BaSnO 3 , there are almost no reports on the electrical transport properties of the films with other orientations. In this paper, the authors fabricate (111) and (001) (Ba,La)SnO 3 films by using pulsed laser deposition to evaluate the structural differences including the epitaxial strain and the orientation distribution generated from the differences in the growth mode that is originated in the ionic arrangement of each surface. The effects of the structural differences for the conductivities of (001) and (111) films and how do the authors achieve the epitaxial films with high mobility are discussed.

    DOI： 10.1002/pssa.201700800

  • Saturated and Pinched Ferroelectric Hysteresis Loops in BiFeO3 Ceramics 査読

    Jin Hong Choi, Takeshi Yoshimura, Norifumi Fujimura, Chae Il Cheon

    Journal of the Korean Physical Society   74 ( 3 )   269 - 273   2019年02月（ ISSN:0374-4884 ）

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    掲載種別：研究論文（学術雑誌）  

    © 2019, The Korean Physical Society. BiFeO 3 (BFO) ceramics were prepared by conventional solid-state reaction method without quenching. The effect of the sintering condition on the phase evolution and the ferroelectric properties of these BFO ceramics were investigated. A pinched polarization - electric field (P-E) hysteresis loop was observed in the sample sintered at high temperature for a short period (820 °C for 1 hour) because the domain wall motion is restricted by a large number of ionic defects such as oxygen vacancies. The BFO sample sintered at low temperature for a long period (760 °C for 6 hours) displayed a well-saturated P-E hysteresis loop due to its low ionic defect density.

    DOI： 10.3938/jkps.74.269

    その他URL： http://link.springer.com/content/pdf/10.3938/jkps.74.269.pdf

  • Time-resolved simulation of the negative capacitance stage emerging at the ferroelectric/semiconductor hetero-junction 査読

    K. Takada, T. Yoshimura, N. Fujimura

    AIP Advances   9 ( 2 )   025037 - 025037   2019年02月

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    掲載種別：研究論文（学術雑誌）  

    © 2019 Author(s). Recently, a number of papers have demonstrated sub-60 mV/decade switching by using the negative capacitance (NC) effect in ferroelectric-gate FETs. However, the physical picture is not yet understood. In this paper, an alternative physical picture for emerging NC is proposed and the development of the NC stage at the ferroelectric/semiconductor hetero-junction is described. Proposed physical picture is based on two factors, 1. "decrease in an additional voltage originated from the depolarization field by surface potential of semiconductor" and 2. "Change in the distribution ratio of gate voltage (V G ) to voltage applied to the ferroelectric layer (V F ) and surface potential of the semiconductor (ψ S ) due to the capacitance change of semiconductor." With considering these two essential phenomena, time-resolved simulations of the NC stage emerging at the ferroelectric/semiconductor hetero-junction were carried out. This NC phenomena expressed by the negative differential of the D F for the V F , i.e. (D F /V F <0), emerging in the MFS (metal/ferroelectric/semiconductor) capacitor without inserting dielectric layer, are dynamically simulated to discuss the proposed NC process. The simulation results clearly reveal that the NC stage is originated from the existence of additional voltage caused by the depolarization field by surface potential of semiconductor originated from the existence of remanent polarization of ferroelectric layer, and change in the capacitance of the semiconductor during polarization switching. The different physical picture from steady-state NC and transient NC can be clearly shown.

    DOI： 10.1063/1.5075516

  • Relationship between Spontaneous Pattern Formation of Donor Molecules and Surface States on 2 Dimensional Semiconducting Materials 査読

    H. Ichimiya, M. Takinoue, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    Chemistry and Micro-Nano Systems,18,1,2019, 雑誌   2019年

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    共著区分：共著  

  • Convection-Flow-Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface-Charge Transfer Doping of Molybdenum Disulfide 査読

    Keigo Matsuyama, Akito Fukui, Kohei Miura, Hisashi Ichimiya, Yuki Aoki, Yuki Yamada, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura, and Daisuke Kiriya

    ChemistryOpen 雑誌   2019年

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    共著区分：共著  

  • The effects of the chemical composition on the charge/spin ordering transition in YbFe2O4 epitaxial films 査読

    J. Tanaka, K. Miura, D. Kiriya, T. Yoshimura, A. Ashida and N. Fujimura

    JJAP FMA特集号 雑誌   2019年

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    共著区分：共著  

  • Piezoelectric energy harvesting from AC current-carrying wire 査読

    Takeshi Yoshimura, Kyohei Izumi, Yuya Ueno, Toshio Minami, Shuichi Murakami, Norifumi Fujimura

    JJAP FMA特集号 雑誌   2019年

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    共著区分：共著  

  • The Effect of Small Amount of Oxygen During Deposition for the Structural Change of Sputtered HfO2-based Films 査読

    Kenshi Takada, Yuki Saho, Takeshi Yoshimura, and Norifumi Fujimura

    JJAP 雑誌   2019年

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    共著区分：共著  

  • Electronic Structure Mosaicity of Monolayer Transition Metal Dichalcogenides by Spontaneous Pattern Formation of Donor Molecules 査読

    H. Ichimiya, M. Takinoue, A. Fukui, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    ACS Appl. Mater. Interfaces, 11 (17), pp 15922–15926 (2019) 雑誌   2019年

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    共著区分：共著  

  • Solvent engineering for strong photoluminescence enhancement of monolayer molybdenum disulfide in redox-active molecular treatment 査読

    Hisashi Ichimiya, Akito Fukui, Yuki Aoki, Yuki Yamada, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura and Daisuke Kiriya

    Applied Physics Express, Volume 12, Number 5,051014,1-5 (2019) 雑誌   2019年

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    共著区分：共著  

  • Electromechanical characteristics of piezoelectric vibration energy harvester with 2-degree-of-freedom system 査読

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Appl. Phys. Lett. 114, 133902,1-4 (2019) 雑誌   2019年

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  • Demonstration of high-performance piezoelectric MEMS vibration energy harvester using BiFeO3 film with improved electromechanical coupling factor 査読

    Masaaki Aramaki, Takeshi Yoshimura, Shuichi Murakami, Kazuo Satoh, Norifumi Fujimura

    Sensors and Actuators A: Physical, Volume 291, 167-173,(2019) 雑誌   2019年

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  • Systematic Study of Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Acid Treatment 査読

    D. Kiriya, Y. Hijikata, J. Pirillo, R. Kitaura, A. Murai, A. Ashida, T. Yoshimura, N. Fujimura

    Langmuir, 34, 10234-10249(2018). 雑誌   2018年

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  • Time-resolved Simulation of the Negative Capacitance Stage Emerging at the Ferroelectric/Semiconductor Hetero-Junction 査読

    K. Takada, T. Yoshimura, N. Fujimura

    AIP Advances 9, 025037,1-5 (2019). 雑誌   2018年

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  • Characterization of piezoelectric MEMS vibration energy harvesters 査読

    S. Murakami, T. Yoshimura, Y. Kanaoka, K. Tsuda, K. Satoh, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics 57, 11UD10 (2018), 雑誌   2018年

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  • (001) Si 基板直上への Y doped HfO2薄膜のエピタキシャル成長 査読

    鎌田 大輝, 高田 賢志, 吉村 武, 藤村 紀文

    材料,Vol. 67,No. 9, pp. 844-848(2018). 雑誌   2018年

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  • Tuning Transition-Metal Dichalcogenide Field-EffectTransistor by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film 査読

    H. Ichimiya, M. Takinoue, A. Fukui, K. Miura, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    ACS Nano, 12, 10, 10123-10129(2018), 雑誌   2018年

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  • The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO3 thin films 査読

    N. Okamoto, K. Kariya, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics Volume 57, 11S,11UF07,1-4 (2018), 雑誌   2018年

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  • Direct piezoelectric response in vinylidene fluoride – trifluoroethylene copolymer films 査読

    Y. Matsushita, I. Kanagawa, T. Yoshimura, N. Fujimura

    Japanese Journal of Applied Physics, Volume 57, Number 11S ,11UG01,1-4(2018), 雑誌   2018年

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  • Investigation of the Effect of Nonlinearity on the Electromechanical Properties of Piezoelectric MEMS Vibration Energy Harvesters 査読

    M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, K. Satoh, K. Kanda, N. Fujimura

    Japanese Journal of Applied Physics Volume 57, 11S,11UD03,1-4 (2018), 雑誌   2018年

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  • Reaction of N,N'-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide 査読

    A. Fukui, K. Miura, H. Ichimiya, A. Tsurusaki, K. Kariya, T. Yoshimura, A. Ashida, N. Fujimura, D. Kiriya

    AIP Advances 8, 055313,1-7 (2018), 雑誌   2018年

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    共著区分：共著  

  • Fabrication and characterization of (Ba,La)SnO3 semiconducting epitaxial films on (111) and (001) SrTiO3 substrates 査読

    K. Miura, D. Kiriya, T. Yoshimura, A. Ashida, N. Fujimura

    Physica Status Solidi A,216,1700800,1-7(2018). 雑誌   2018年

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    共著区分：共著  

  • Growth and ferroelectric properties of La and Al codoped BiFeO3 epitaxial films 査読

    Hirokazu Izumi,Takeshi Yoshimura,Norifumi Fujimura

    Journal of Applied Physics 121(2017), 174102 雑誌   2017年

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  • Ultrafast dynamics of coherent optical phonon correlated with the antiferromagnetic transition in a hexagonal YMnO3 epitaxial film 査読

    Takayuki Hasegawa, Norifumi Fujimura, and Masaaki Nakayama

    Appl. Phys. Lett. 111, 192901 (2017) 雑誌   2017年

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  • Development of piezoelectric bistable energy harvester based on buckled beam with axially constrained end condition for human motion 査読

    Ali M. Eltanany, T. Yoshimura, N. Fujimura, M. R. Ebied, and M. G. S. Ali

    Japanese Journal of Applied Physics, Volume 56, Number 10S (2017). 雑誌   2017年

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  • Crystallographic Polarity Effect of ZnO on Thin Film Growth of Pentacene 査読

    Tatsuru Nakamura, Takahiro Nagata, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba,Toyohiro Chikyow, Norifumi Fujimura, and　Yutaka Wakayama

    Japanese Journal of Applied Physics, Volume 56, Number 4S (2017) 雑誌   2017年

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  • Photoelectron spectroscopic study on monolayer pentacene thin film/ polar ZnO single crystal hybrid interface 査読

    Takahiro Nagata, Tatsuru Nakamura, Ryoma Hayakawa, Takeshi Yoshimura, Seungjun Oh, Nobuya Hiroshiba, Toyohiro Chikyow, Norifumi Fujimura, and Yutaka Wakayama

    Applied Physics Express, 10(2017), 025702 1-4 雑誌   2017年

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  • Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3 査読

    John D. Baniecki, Takashi Yamazaki, Dan Ricinschi, Quentin Van Overmeere, Hiroyuki Aso, Yusuke Miyata, Hiroaki Yamada, Norifumi Fujimura, Ronald Maran, Toshihisa Anazawa, Nagarajan Valanoor, and Yoshihiko Imanaka

    Scientific Reports, 7 (2017), 41725 1-12, 雑誌   2017年

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  • Origin of the photoinduced current of strongly correlated YMnO3 ferroelectric epitaxial films 査読

    Kohei Miura, Lejun Zhang, Daisuke Kiriya, Atsushi Ashida, Takeshi Yoshimura and Norifumi Fujimura

    Japanese Journal of Applied Physics, 56(2017), Number 10S 雑誌   2017年

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  • Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs 査読

    Y. Miyata, T. Yoshimura, A. Ashida, and N. Fujimura

    Ferroelectric-Gate Field Effect Transistor Memories, Springer(2016)111-138,. 雑誌   2016年

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  • Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, ply(vinylidene fluoride-trifluoroethylene), as a gate dielectric 査読

    Yusuke Miyata, Takeshi Yoshimura, Atsushi Ashida, and Norifumi Fujimura

    Japanese Journal of Applied Physics 55(2016), 04EE04 1-4 雑誌   2016年

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  • Reliability of the properties of (Pb,La)(Zr,Ti)O3 capacitors with non–noble metal oxide electrodes stored in an H2 atmosphere 査読

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido

    MRS Advances 1(2016) 369−374 雑誌   2016年

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    共著区分：共著  

  • Al: ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb, La)(Zr,Ti)O3 capacitors 査読

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima

    Electronics Letters 52(2016), 230−232 雑誌   2016年

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  • Comparative Study of Hydrogen - and Deuterium - induced Degradation of Ferroelectric (Pb,La)(Zr,Ti)O3 Capacitors Using Time of Flight Secondary Ion Measurement 査読

    Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, and R. Shishido

    IEEE Trans. Ultrason. Ferroelectr. Freq. Control, 63(2016), 1668-1673 雑誌   2016年

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  • Comparative Study of Ferroelectric (K,Na)NbO3 Thin Films Pulsed Laser Deposition on Platinum Substrates with Different Orientation 査読

    R. Tamano, Y. Takada, N. Okamoto. T. Saito, K. Higuchi, A. Kitajima, T. Yoshimura, and N. Fujimura

    Proc. 2016 IEEE ISAF/ECAPD/PFM(2016), 1−4 雑誌   2016年

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    共著区分：共著  

  • Evaluatioion of Deuterium ion Profile in (Pb,La)(Zr,Ti)O3 Capacitors Structures with Conductive Oxide Top Electrode by Time of Flight Secondary Ion Mass Spectrometry 査読

    Y. Takada, R. Tamano, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima and R. Shishido

    Proc. 2016 IEEE ISAF/ECAPD/PFM(2016), 1−4 雑誌   2016年

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    共著区分：共著  

  • Fabrication of Doped Pb(Zr,Ti)O3 Capacitors on Pt Substrates with Different Orientations 査読

    R. Tamano, T. Amano, Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima

    Electronics Letters, 52(2016), 1399-1401 雑誌   2016年

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    共著区分：共著  

  • Ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors employing Al-doped ZnO top electrodes prepared by pulsed laser deposition under different oxygen pressures 査読

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi and A. Kitajima

    Japanese Journal of Applied Physics (2016), 55, 06JB04. 雑誌   2016年

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    共著区分：共著  

  • Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition 査読

    Atsushi Ashida, Shunsuke Sato, Takeshi Yoshimura, Norifumi Fujimura,

    Journal of Crystal Growth(2016) 雑誌   2016年

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    共著区分：共著  

  • High efficiency piezoelectric MEMS vibration energy harvesters using (100) oriented BiFeO3 Films 査読

    M. Aramaki, K. Izumi, T. Yoshimura, S. Murakami, and N. Fujimura

    Proc. of the 30th IEEE International Conference on Micro Electro Mechanical Systems (2016), 829-832 雑誌   2016年

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    共著区分：共著  

  • Direct measurements of electrocaloric effect in ferroelectrics using thin-film thermocouples 査読

    Yuji Matsushita, Atsushi Nochida, Takeshi Yoshimura, and Norifumi Fujimura

    Jpn. J. Appl. Phys. 55(2016), 10TB04 1-4 雑誌   2016年

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  • Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films 査読

    Jin Hong Choi, Takeshi Yoshimura, and Norifumi Fujimura

    Jpn. J. Appl. Phys. 55(2016), 10TA17 1-4 雑誌   2016年

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    共著区分：共著  

  • Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system 査読

    Masaaki Aramaki, Kento Kariya, Takeshi Yoshimura, Shuichi Murakami, and Norifumi Fujimura

    Jpn. J. Appl. Phys. 55(2016), 10TA16 1-5 雑誌   2016年

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    共著区分：共著  

  • Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films 査読

    Y. Miyata, K. Ueno, Y. Togawa, T. Yoshimura, A. Ashida, and N. Fujimura

    Appl. Phys. Lett. 109 (2016), 112101 1-4 雑誌   2016年

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    共著区分：共著  

  • (111)SrTiO3基板上への(Ba,La)SnO3薄膜の結晶成長 査読

    三浦 光平, 樫本 涼,吉 村 武, 芦田 淳, 藤村 紀文

    材料 65 (2016), 638-641 雑誌   2016年

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    共著区分：共著  

  • Lowering the growth temperature of strongly-correlated YbFe2O4 thin films prepared by pulsed laser deposition 査読

    Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Tsuyoshi Uehara and Norifumi Fujimura

    Thin Solid Films 614(2016), 44-46 雑誌   2016年

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    共著区分：共著  

  • Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 査読

    Norifumi Fujimura, Takeshi Yoshimura

    J. Appl. Phys. 119 (2016), 175302 1-6 雑誌   2016年

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    共著区分：共著  

  • Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple 査読

    Y. Matsushita, T. Yoshimura, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   2015年11月

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    共著区分：共著  

  • Enhancement of piezoelectric properties of BiFeO3 films for vibration energy harvesting 査読

    T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami

    Proc. of the Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌   2015年11月

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    共著区分：共著  

  • Direct measurement of electrocaloric effect in barium titanate thin films 査読

    T. Yoshimura, K. Kariya, N. Fujimura, and S. Murakami

    Proc. of The Seventeenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics 雑誌   2015年11月

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    共著区分：共著  

  • Piezoelectric MEMS vibrational energy harvester using BiFeO3 films 査読

    T. Yoshimura, S. Murakami, K. Kariya, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   2015年11月

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    共著区分：共著  

  • Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking 査読

    Ali M. Eltanany, T. Yoshimura, N. Fujimura, Nour Z. Elsayed, Mohamed R. Ebied and Mohamed G. S. Ali

    Japanese Journal of Applied Physics 雑誌 応用物理学会   54   2015年09月

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    共著区分：共著  

  • Growth and characterization of (1 − x)BiFeO3–x(Bi0.5,K0.5)TiO3 thin films 査読

    Jin Hong Choi, Takeshi Yoshimura and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌   54   2015年09月

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    共著区分：共著  

  • Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system 査読

    Yusuke Miyata, Yukinori Nose, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura

    J. Crystal Growth 雑誌 Elsevier   425   158 - 161   2015年09月

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    共著区分：共著  

  • Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures 査読

    H. Yamada, T. Yoshimura and N. Fujimura

    Journal of Applied Physics 雑誌   117   2015年06月

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    共著区分：共著  

  • Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top slscrtodes in PbLaZrTiOx capacitors 査読

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    International Journal Material Reserch 雑誌   106   83 - 87   2015年04月

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    共著区分：共著  

  • The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties 査読

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    Material Research Soc. Simp. Proseedings 雑誌   1729   2015年04月

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    共著区分：共著  

  • Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors 査読

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    Japanese Journal of Applied Physics 雑誌   54   2015年04月

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    共著区分：共著  

  • Effect of Al-doped ZnO or Sn-doped In2O3 electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3 capacitors 査読

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima and H. Iwai

    Japanese Journal of Applied Physics 雑誌   2015年

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    共著区分：共著  

  • Hydrogen profile measurement of (Pb,La)(Zr,Ti)O3 capacitor with conductive electrode after hydrogen annealing 査読

    Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, H. Iwai, and R. Shishido

    Proc. 2015 IEEE ISAF/ISIF/PFM   2015年

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    共著区分：共著  

  • Direct measurement of the electrocaloric effect in ferroelectrics using thin film thermocouple 査読

    Y. Matsushita, T. Yoshimura, and N. Fujimura

    Proc. of the 32nd International Japan-Korea Seminar on Ceramic 雑誌   2015年

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    共著区分：共著  

  • The output power of piezoelectric MEMS vibration energy harvesters under random oscillations

    K Kariya, T Yoshimura, S Murakami and N Fujimura

    Journal of Physics: Conference Series 雑誌   557   2014年11月

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    共著区分：共著  

  • Enhancement of piezoelectric properties of (100)-orientated BiFeO3 films on (100)LaNiO3/Si 査読

    Kento Kariya, Takeshi Yoshimura, Shuichi Murakami and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   53 ( 9ｓ )   2014年09月

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    共著区分：共著  

  • Piezoelectric properties of (100) orientated BiFeO3 thin films on LaNiO3 査読

    Kento Kariya, Takeshi Yoshimura, Shuichi Murakami and Norifumi Fujimura

    Japanese Journal of Applied Physics 雑誌 The Japan Society of Applied Physics   53 ( 8S3 )   2014年08月

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    共著区分：共著  

  • Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer 査読

    Yoko Takada,Toru Tsuji,Naoki Okamoto,Takeyasu Saito,Kazuo Kondo,Takeshi Yoshimura,Norifumi Fujimura,Koji Higuchi,Akira Kitajima,Akihiro Oshima

    Materials in Electronics Journal of Materials Science   925 ( 5 )   2155 - 2161   2014年05月

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    共著区分：共著  

  • Improved reliability properties of (Pb,La) (Zr,Ti)O3 ferroelectric capacitors by thin aluminium-doped zinc oxide buffer layer 査読

    Y.Takada, T.Tsuji, N.Okamoto, T.Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima

    Electronics Letters IEEE   50 ( 11 )   799 - 801   2014年05月

  • Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition 査読

    T. Nakamura, T. Yoshimura, A. Ashida, N. Fujimura

    Thin Solid Films Elsevier   559   88 - 91   2014年05月

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    共著区分：共著  

  • Correlation between the intra-atomic Mn3+ photoluminescence and antiferromagnetic transition in an YMnO3 epitaxial film 査読

    Masaaki Nakayama, Yoshiaki Furukawa, Kazuhiro Maeda, Takeshi Yoshimura, Hiroshi Uga, Norifumi Fujimura

    Applied Physics Express The Japan Society of Applied Physics   7   2014年02月

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    共著区分：共著  

  • Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films 査読

    K. Ujimoto, T. Yoshimura, K. Wakazono,A. Ashida,N. Fujimura

    Thin Solid Films Elsevier   550   738 - 741   2014年01月

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    共著区分：共著  

  • Development of piezoelectric MEMS vibration energy harvester using (100) oriented BiFeO3 ferroelectric film 査読

    S Murakami, T Yoshimura, K Satoh, K Wakazono, K Kariya and N Fujimura

    Journal of Physics:Conference Series Elsevier   476   2013年12月

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    共著区分：共著  

  • Enhancement of Direct Piezoelectric Properties of Domain-Engineered(100)BiFeO3 Films 査読

    Takeshi Yshimura,Katsuya Ujimoto,Yusaku Kawahara,keisuke Wakazono,Kento Kariya,Norifumi Fujimura,Syuichi Murakami

    Japanese Journal of Applied Physics The Japan Society of Applied Physics   52   2013年09月

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    共著区分：共著  

  • Comparative study of electrical properties of PbLaZrTiOx capacitors with Al-doped ZnO and ITO top electrodes 査読

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 IEEE   6748710   360 - 362   2013年07月

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    共著区分：共著  

  • Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes 査読

    T. Saito, Y. Takada, T. Tsuji, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 IEEE   6748734   205 - 207   2013年07月

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    共著区分：共著  

  • ナノチャネルを有する強誘電体ゲート薄膜トランジスタの作製とその電気特性評価 査読

    野村侑平，吉村武，藤村紀文

    Journal of the Vacuum Society of Japan 日本真空学会   56 ( 5 )   172 - 175   2013年05月

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  • Piezoelectric vibrational energy harvester using lead-free ferroelectric BiFeO3 films 査読

    T. Yoshimura, S. Murakami, K. Wakazono, K. Kariya, N. Fujimura

    Appl. Phys. Express The Japan Society of Applied Physics   6 ( 5 )   051501 1 - 4   2013年05月

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  • Effects of La substitution for BiFeO3 epitaxial thin films 査読

    K. Wakazono, Y. Kawahara, K. Ujimoto, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   62 ( 7 )   1069 - 1072   2013年04月

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    共著区分：共著  

  • Effect of the annealing temperature of P(VDF/TrFE) thin films on their ferroelectric properties 査読

    Y. Yachi, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   62 ( 7 )   1065 - 1068   2013年04月

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    共著区分：共著  

  • 有機強誘電体を用いた磁性半導体Si:Ce薄膜の電界効果 査読

    宮田祐輔，高田浩史，奥山祥孝，吉村武，藤村紀文

    Journal of the Vacuum Society of Japan 日本真空学会   ( 56 )   136 - 138   2013年04月

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  • Effect of target surface microstructure on morphological and electrical properties of pulsed-laser-deposited BiFeO3 epitaxial thin films 査読

    K. Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   52 ( 4 )   045803 1 - 5   2013年04月

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  • Electrical properties of sol-gel derived PbLaZrTiOx capacitors with nonnoble metal oxide top electrodes 査読

    Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima, A. Oshima

    Electrochemical Society Transactions The Electrochemical Society   50 ( 34 )   43 - 48   2013年03月

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  • Orientation control of ZnO films deposited using nonequilibrium atmospheric pressure N2/O2 plasma 査読

    Y. Nose, T. Nakamura, T. Yoshimura, A. Ashida, T. Uehara, N. Fujimura

    Jpn. J. Appl. Phys. Special Issue The Japan Society of Applied Physics   52 ( 1 )   01AC03 1 - 3   2013年01月

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  • Investigation of gas sensing characteristics of TiO2 nanotube channel field-effect transistor 査読

    M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   51 ( 11 )   11PE10 1 - 3   2012年11月

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  • Effect of ferroelectric polarization on carrier transport in controlled polarization type ferroelectric gate field-effect transistors with P(VDF-TeFE)/ZnO heterostructure 査読

    H. Yamada, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   51 ( 11 )   11PB01 1 - 4   2012年11月

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  • Control of crystal structure of BiFeO3 epitaxial thin films by the growth condition and piezoelectric properties 査読

    Y. Kawahara, K. Ujimoto, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys.（Ferroelectric Materials Their Applications） The Japan Society of Applied Physics   51 ( 9 )   09LB04 1 - 5   2012年09月

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  • Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel 査読

    H. Yamada, T. Yoshimura, N. Fujimura

    2012 MRS Spring Meeting Proceedings MRS   2012年04月

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  • Direct piezoelectric properties of (100) and (111) BiFeO3 epitaxial thin films 査読

    K. Ujimoto, T. Yoshimura, A. Ashida, N. Fujimura

    Appl. Phys. Lett. American Institute of Physics   100   102901 1 - 3   2012年03月

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  • Local pH control by electrolysis for ZnO epitaxial deposition on a Pt cathode 査読

    S. Yagi, Y. Kondo, Y. Satake, A. Ashida, N. Fujimura

    Electrochimica Acta Elsevier   62   2012年02月

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  • Direct piezoelectricity of PZT films and application to vibration energy harvesting 査読

    H. Miyabuchi, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   59 ( 3 )   2524 - 2527   2011年09月

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  • Characterization of field effect transistor with TiO2 nanotube channel fabricated by dielectrophoresis 査読

    M. Ishii, M. Terauchi, T. Yoshimura, T. Nakayama, N.Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   082019 1 - 4   2011年09月

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  • Characterization of direct piezoelectric properties for vibration energy harvesting 査読

    T. Yoshimura, H. Miyabuchi, S. Murakami, A. Ashida, N. Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   092026 1 - 4   2011年09月

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  • ZnO crystal growth on microelectrode by electrochemical deposition method 査読

    Y. Kondo, A. Ashida, N. Nouzu, N. Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   092043 1 - 4   2011年09月

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  • Effect of lattice misfit strain on crystal system and ferroelectric property of BiFeO3 epitaxial thin films 査読

    K. Ujimoto, H. Izumi, T. Yoshimura, A. Ashida, N. Fujimura

    IOP Conf. Series: Materials Science and Engineering IOP   18   092064 1 - 4   2011年09月

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  • Characterization of direct piezoelectric effect in 31 and 33 modes for application to vibration energy harvester 査読

    H. Miyabuchi, T. Yoshimura, S. Murakami, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 9 )   2011年09月

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  • Effect of ferroelectric polarization domain structure on electronic transport property of ferroelectric ZnO heterostructure 査読

    H. Yamada, T. Fukushima, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 9 )   2011年09月

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  • Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma 査読

    R. Hayakawa, M. Yoshida, K. Ide, Y. Yamashita, H. Yoshikawa, K. Kobayashi, S. Kunugi, T. Uehara, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   110   2011年09月

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  • Ce-induced reconstruction of Si(001) surface structures 査読

    D. Shindo, S. Sakurai, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 6 )   065701 1 - 4   2011年06月

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  • Initial growth process in electrochemical deposition of ZnO 査読

    A. Ashida, N. Nouzu, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 5 )   05FB12 1 - 3   2011年05月

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  • Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration 査読

    T. Saito, T.Tsuji, K. Izumi, Y. Hirota, N. Okamoto, K.Kondo, T. Yoshimura, N. Fujimura, A. Kitajima, A. Oshima

    Electronics Letters ＩＥＴ   47 ( 8 )   486 - 487   2011年04月

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  • Impedance analysis of controlled-polarization-type ferroelectric-gate thin film transistor using resistor-capacitor lumped constant circuit 査読

    T. Fukushima, K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   50 ( 4 )   04DD16 1 - 4   2011年04月

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  • Electronic transport property of a YbMnO3/ZnO heterostructure 査読

    H. Yamada, T. Fukushima, T. Yoshimura, N. Fujimura

    Journal of the Korean Physical Society Korean Phys. Soc.   58 ( 4 )   792 - 796   2011年04月

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  • Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films 査読

    T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Crystal Growth Elsevier   318   516 - 518   2011年03月

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  • 酸化亜鉛の最先端技術と将来 査読

    藤村紀文

    酸化亜鉛の最先端技術と将来 シーエムシー出版   2011年01月

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    共著区分：単著  

  • Fabrication and magneto-transport properties of Zn0.88-xMgxMn0.12O/ZnO heterostructures grown on ZnO single-crystal substrates 査読

    K. Masuko, T. Nakamura, A. Ashida, T. Yoshimura, N. Fujimura

    Advances in Science and Technology Trans Tech Publications Inc.   75   2010年10月

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  • Local piezoelectric and conduction properties of BiFeO3 epitaxial thin films 査読

    K. Ujimoto, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys., Ferroelectric Materials Their Applications The Japan Society of Applied Physics   49 ( 9 )   2010年09月

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  • Ferroelectric properties of magnetoferroelectric YMnO3 epitaxial films at around the neel temperature 査読

    T. Yoshimura, K. Maeda, A. Ashida, N. Fujimura

    Key Engineering Materials Trans Tech Publications Inc.   445   144 - 147   2010年07月

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  • Dielectric behavior of YMnO3 epitaxial thin film at around magnetic phase transition temperature 査読

    K. Maeda, T. Yoshimura, A. Ashida, N. Fujimura

    Advances in Science and Technology Trans Tech Publications Inc.   67   176 - 181   2010年06月

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  • The effects of aluminum doping for the magnetotransport property of Si:Ce thin films 査読

    D. Shindo, K. Fujii, T. Terao, S. Sakurai, S. Mori, K. Kurushima, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   107 ( 9 )   09C308 1 - 3   2010年05月

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  • Direct piezoelectric properties of Mn-doped ZnO epitaxial films 査読

    T. Yoshimura, H. Sakiyama, T. Oshio, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   49 ( 2 )   021501 1 - 3   2010年03月

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  • Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films 査読

    Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   3097 - 3100   2010年03月

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  • Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition 査読

    T. Nakamura, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   2971 - 2974   2010年03月

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  • Control of cathodic potential for deposition of ZnO by constant-current electrochemical method 査読

    N. Nouzu, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   2957 - 2960   2010年03月

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  • Analysis of carrier modulation in channel of　ferroelectric-gate transistors having polar semiconductor 査読

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura

    Thin Solid Films Springer   518 ( 11 )   3026 - 3029   2010年03月

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  • Effects of Mg doping on structural, optical, and electrical properties of CuScO2(0001) epitaxial films 査読

    Y. Kakehi, K. Satoh, T. Yoshimura, A. Ashida, N. Fujimura

    Vacuum Surface Engineering, Surface Instrumentation & Vacuum Technology Elsevier   84 ( 5 )   618 - 621   2009年12月

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  • Amorphous carbon film deposition for hydrogen barrier in FeRAM integration by radio frequency plasma chemical vapor deposition method 査読

    T. Saito, K. Izumi, Y. Hirota, N. Okamoto, K. Kondo, T. Yoshimura, N. Fujimura

    Electrochemical Society Transactions The Electrochemical Society   25   693 - 698   2009年10月

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    共著区分：共著  

  • Contribution of s-d exchange interaction to magnetoresistance of ZnO-based heterostructures with a magnetic barrier 査読

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Physical Review B the American Physical Society   80 ( 12 )   2009年09月

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    共著区分：共著  

  • Polarization switching behavior of YMnO3 thin film at around magnetic phase transition temperature 査読

    K. Maeda, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   48 ( 9 )   2009年09月

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    共著区分：共著  

  • Electron transport properties of Zn0.88Mn0.12O/ZnO modulation-doped heterostructures 査読

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Journal of Vacuum Science & Technology B AIP Publishing LLC   27 ( 3 )   1760 - 1764   2009年05月

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    共著区分：共著  

  • Magnetic properties of uniformly Ce-doped Si thin films with n-type conduction 査読

    T. Terao, K. Fujii, D. Shindo, T. Yoshimura, N.Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   48 ( 3 )   033003 1 - 5   2009年03月

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  • Spin-phonon coupling in multiferroic YbMnO3 studied by Raman scattering 査読

    H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Yoshimura, N. Fujimura

    Jounal of Physics-Condensed Matter Elsevier   21 ( 6 )   2009年02月

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    共著区分：共著  

  • Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques 査読

    Y. Kakehi, K. Satoh, T. Yotsuya, K. Masuko, T. Yoshimura, A. Ashida, N. Fujimura

    J. Crystal Growth Elsevier   311 ( 4 )   1117 - 1122   2009年02月

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    共著区分：共著  

  • Electrical characteristics of controlled-polarization-type ferroelectric-gate field-effect transistor 査読

    T. Fukushima, T. Yoshimura, K. Masuko, K. Maeda, A. Ashida, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   47 ( 12 )   8874 - 8879   2008年12月

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  • Effects of oxygen annealing on dielectric properties of LuFeCuO4 査読

    Y. Matsuo, M. Suzuki, Y. Noguchi, T. Yoshimura, N. Fujimura, K. Yoshi, N. Ikeda, S. Mori

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   47 ( 11 )   8464 - 8467   2008年11月

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  • Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films 査読

    S. Sakamoto, T. Oshio, A. Ashida, T. Yoshimura, N. Fujimura

    Applied Surface Science Elsevier   254 ( 19 )   6248 - 6251   2008年07月

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    共著区分：共著  

  • Electrical and optical properties of excess oxygen intercalated CuScO2(0001) epitaxial films prepared by oxygen radical annealing 査読

    Y. Kakehi, K. Satoh, T. Yotsuya, A. Ashida, T. Yoshimura, N. Fujimura

    Thin Solid Films Elsevier   516 ( 17 )   5785 - 5789   2008年07月

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    共著区分：共著  

  • Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si 査読

    D. Shindo, T. Yoshimura, N. Fujimura

    Applied Surface Science Elsevier   254 ( 19 )   6218 - 6221   2008年07月

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    共著区分：共著  

  • Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films

    K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    Proceedings of the 2007 16th IEEE International Symposium on Applications of Ferroelectrics IEEE   437   2008年05月

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    共著区分：共著  

  • Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films

    K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    IEEE Trans Ultrason Ferroelectr Freq Control IEEE   55 ( 5 )   1056 - 1060   2008年05月

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    共著区分：共著  

  • Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films 査読

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   103 ( 9 )   2008年05月

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    共著区分：共著  

  • Magnetic and dielectric properties of Yb(Mn1-xAlx)O3 thin films 査読

    K. Fukae, T. Takahashi, T. Yoshimura, N. Fujimura

    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control IEEE   55 ( 5 )   1056 - 1060   2008年05月

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    共著区分：共著  

  • Effects of spontaneous and piezoelectric polarizations on carrier confinement at the Zn0.88Mn0.12O/ZnO interface 査読

    K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura, N. Fujimura

    Physica Status Solidi (c） John Wiley & Sons, Inc.   5   3107 - 3109   2008年05月

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    共著区分：共著  

  • Electro-optic property of ZnO:Mn epitaxial films 査読

    T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    Physica Status Solidi (c) John Wiley & Sons, Inc.   5   3110 - 3112   2008年05月

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    共著区分：共著  

  • Spin-dependent transport in a ZnMnO/ZnO heterostructure 査読

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   103 ( 7 )   2008年04月

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    共著区分：共著  

  • Influence of antiferromagnetic exchange interaction on magnetic properties of ZnMnO thin films grown pseudomorphically on ZnO (000(1)over-bar) single-crystal substrates(2008) 査読

    K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   103 ( 4 )   2008年02月

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    共著区分：共著  

  • Multiferroic behaviors of hexagonal YMnO3 and YbMnO3 epitaxial films 査読

    N. Fujimura, K. Maeda,　K. Fukae, T. Yoshimura

    Material Research Soc. Fall Meeting MRS   2007年12月

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    共著区分：共著  

  • Effect of Bi substitution on the magnetic and dielectric properties of epitaxially-grown BaFe0.3Zr0.7O3-δ thin films on SrTiO3 substrates 査読

    T. Matsui, S. Daido, N. Fujimura, T. Yoshimura, H. Tsuda, K. Morii

    Journal of Physics ａｎｄ Chemistry of Solids Elsevier   68 ( 8 )   1515 - 1521   2007年09月

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    共著区分：共著  

  • Raman scattering studies on multiferroic YMnO3 査読

    H. Fukumura, S. Matsui, H. Harima, K. Kisoda, T. Takahashi, T. Yoshimura, N. Fujimura

    Journal of Physics: Condens Matter Elsevier   19 ( 36 )   2007年09月

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    共著区分：共著  

  • Spin-coupled phonons in multiferroic YbMnO3 epitaxial films by raman scattering 査読

    H. Fukumura, N. Hasuike, H. Harima, K. Kisoda, K. Fukae, T. Takahashi, T.Yoshimura, N. Fujimura

    PHONONS 2007 Journal of Physics: Conference Series Elsevier   92   2007年08月

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    共著区分：共著  

  • Magnetic frustration behavior of ferroelectric ferromagnet YbMnO3 epitaxial films 査読

    N. Fujimura, T. Takahashi T. Yoshimura, A. Ashida

    J. Appl. Phys. AIP Publishing LLC   101 ( 9 )   2007年05月

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    共著区分：共著  

  • Preparation and the magnetic property of ZnMnO thin films on (000-1) ZnO single crystal substrate 査読

    K. Masuko, A. Ashida,T. Yoshimura, N. Fujimura

    Journal of Magnetism and Magnetic Materials Elsevier   310   e711 - e713   2007年03月

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    共著区分：共著  

  • Magnetic properties of low temperature grown Si:Ce thin films on (001) Si substrate 査読

    T. Terao, Y. Nishimura, D. Shindo, A. Ashida, N. Fujimura

    Journal of Magnetism and Magnetic Materials Elsevier   310   e726 - e728   2007年03月

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    共著区分：共著  

  • The comparison of the growth models of silicon nitride ultra-thin films fabricated using atmospheric pressure plasma and radio frequency plasma 査読

    M. Nakae, R. Hayakawa, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara

    J. Appl. Phys. AIP Publishing LLC   101 ( 2 )   2007年01月

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    共著区分：共著  

  • Multiferroic behaviors of YMnO3 and YbMnO3 epitaxial films (invided paper) 査読

    N. Fujimura, N. Shigemitsu, T. Takahashi, A. Ashida, T. Yoshimura

    Philosophical Magazine Letters Taylor&Francis   87 ( 41702 )   193 - 201   2007年01月

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    共著区分：共著  

  • Effect of additional oxygen for the formation of silicon oxynitride using nitrogen plasma generated near atmospheric pressure 査読

    R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   45 ( 12 )   9025 - 9028   2006年12月

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    共著区分：共著  

  • Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure 査読

    R. Hayakawa, M. Nakae, T.Yoshimura, A. Ashida, N. Fujimura, T. Uehara, M. Tagawa, Y. Teraoka

    J. Appl. Phys. AIP Publishing LLC   100 ( 7 )   2006年10月

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  • Single-wall carbon nanotube field efect transistors with non-volatile memory operation 査読

    T. Sakurai, T. Yoshimura, S. Akita, N. Fujimura, Y. Nakayama

    Jpn. J. Appl. Phys. Part 2, Letters & express letters The Japan Society of Applied Physics   45 ( 37-41 )   L1036 - L1038   2006年10月

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  • Growth and ferromagnetic properties of ferroelectric YbMnO3 thin films 査読

    T. Takahashi, T. Yoshimura, N. Fujimura

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   45 ( 9B )   7329 - 7331   2006年09月

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  • Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition 査読

    M. Nakayama, H. Tanaka, K. Masuko, T. Fukushima, A. Ashida, N. Fujimura

    Applied Phys. Letters American Institute of Physics   88 ( 24 )   2006年06月

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  • Reaction of Si with excited nitrogen species in pure nitrogen plasma near atmospheric pressure 査読

    R.Hayakawa, T.Yoshimura, A.Ashida, T.Uehara, N.Fujimura

    Thin Solid Films Elsevier   506-507   423 - 426   2006年04月

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  • Electro-optical effect in ZnO:Mn thin films prepared by Xe sputtering 査読

    A. Ashida, T. Nagata, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   99 ( 1 )   2006年01月

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  • Ferromagnetic and dielectric behavior of Mn-doped BaCoO3 査読

    T. Inoue, T. Matsui, N. Fujimura , H. Tsuda, K. Morii

    IEEE Transactions on Magnetics IEEE   41 ( 10 )   3496 - 3498   2005年10月

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  • Low-temperature growth and characterization of epitaxial YMnO3/Y2O3/Si MFIS capacitors with thinner insulator layer 査読

    K. Haratake, N. Shigemitsu, M.Nishijima, T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   44 ( 9B )   6977 - 6980   2005年09月

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  • Enhancement of ferromagnetic ordering in dielectric BaFe1-xZrxO3 (x=0.5-0.8) single crystalline films by pulsed laser-beam deposition 査読

    T. Matsui, E.. Taketani, N. Fujimura, H. Tsuda, K. Morii

    J. Appl. Phys. AIP Publishing LLC   97 ( 10 )   2005年05月

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  • Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition 査読

    Y. Kakehi, K. Satoh, T. Yotsuya, S. Nakao, T. Yoshimura, A. Ashida, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   97 ( 8 )   2005年04月

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  • Improvement of magnetization and leakage current properties of magnetoelectric BaFeO3 thin films by Zr substitution 査読

    T. Matsui, E..Taketani, H. Tuda, N. Fujimura, K. Morii

    Appl. Phys. Lett.. American Institute of Physics   86 ( 8 )   2005年02月

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  • Analysis of nitrogen plasma generated by a pulsed plasma sysytem near atmospheric pressure 査読

    R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, N. Fujimura

    J. Appl. Phys. AIP Publishing LLC   96 ( 11 )   6094 - 6096   2004年12月

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  • Interface characteristics of (Zn,Mn)O/ZnO grown on ZnO substrate 査読

    A. Ashida, K. Masuko, T. Edahiro, T. Oshio, N. Fujimura

    J. Crystal Growth Elsevier   275   2004年12月

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  • Formation of silicon oxynitride films with low leakage current using N2/O2 plasma near atomospheric pressure 査読

    R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   43 ( 11B )   7853 - 7856   2004年11月

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  • Synthesis of Bi(FexAl1-x)O3 thin films by pulsed laser deposition and its structural characterization 査読

    M. Okada, T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   43 ( 9B )   6609 - 6612   2004年09月

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  • Pulsed-laser-deposited YMnO3 epitaxial films with square polarization-electric field hysteresis loop and low-temperature growth 査読

    N. Shigemitsu, H. Sakata, D. Ito, T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   43 ( 9B )   6613 - 6616   2004年09月

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  • Effect of oxygen deficiencies on magnetic properties of epitaxial grown BaFeO3 thin films on (100)SrTiO3 substrates 査読

    E. Taketani, T. Matsui, N. Fujimura, K. Morii

    IEEE Transactions on Magnetics Part 2 IEEE   40 ( 4 )   2736 - 2738   2004年07月

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  • Electro-optic effect in ZnO:Mn thin films 査読

    T. Nagata, A. Ashida, N. Fujimura, T. Ito

    Journal of Alloys and Compounds Elsevier   371   157 - 159   2004年05月

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  • The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering 査読

    T. Nagata, A. Ashida, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   95 ( 8 )   3923 - 3927   2004年04月

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  • P-E measurements for ferroelectric gate capacitors 査読

    T. Yoshimura, N. Fujimura

    Integrated Ferroelectrics Taylor&Francis   61   59 - 64   2004年02月

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  • Optical propagation loss of ZnO films grown on sapphire 査読

    A. Ashida, H. Ohta, T. Nagata, Y. Nakano, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   95 ( 4 )   1673 - 1676   2004年02月

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  • Influence of schottky and poole-frenkel emission on the retention property of YMnO3 based metal/ferroelectric/insulator/semiconductor capacitors 査読

    D. Ito, N. Fujimura, T. Yoshimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   94 ( 6 )   4036 - 4041   2003年09月

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  • Polarization hysteresis loops of ferroelectric gate capacitors measured by Sawyer-tower circuit 査読

    T. Yoshimura, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   42 ( 9B )   6011 - 6014   2003年09月

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  • Improvement of surface morphology and the dielectric property of YMnO3 films 査読

    H. Sakata, D. Ito, T. Yoshimura, A. Ashida, N. Fujimura

    Jpn J. Appl. Phys. The Japan Society of Applied Physics   42 ( 9B )   6003 - 6006   2003年09月

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  • Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field effect transistors 査読

    D. Ito, N. Fujimura, T. Yoshimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 9 )   5563 - 5567   2003年05月

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  • Effect of carrier for magnetic and magnetotransport properties of Si:Ce films 査読

    T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   7679 - 7681   2003年05月

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  • Formation of two-dimensional electron gas and the magneto-transport behavior of ZnMnO/ZnO heterostructure 査読

    T. Edahiro, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   7673 - 7675   2003年05月

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  • Magnetic properties of highly resistive BaFeO3 thin films epitaxially grown on SrTiO3 single crystal substrates 査読

    T. Matsui, E. Taketani, N. Fujimura, T. Ito, K. Morii

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   6993 - 6995   2003年05月

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  • Ferromagnetic and ferroelectric behaviors of A site substituted YMnO3-based epitaxial thin films 査読

    N. Fujimura, D. Ito, H. Sakata, T. Yoshimura, T. Yokota, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 10 )   6990 - 6992   2003年05月

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  • Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films 査読

    T. Yokota, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   93 ( 7 )   4045 - 4048   2003年04月

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  • Magnetic and dielectric properties of epitaxially grown BaFeO3 thin films on SrTiO3 single crystal substrates 査読

    T. Matsui, H. Tanaka, E. Taketani, N. Fujimura, T. Ito, K. Morii

    J. Korean Phys. Soc. Korean Phys. Soc.   42   S1378 - S1381   2003年04月

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  • The effect of leakage current on the retention property of YMnO3 based MFIS capacitor 査読

    D. Ito, N. Fujimura, T. Ito

    Integrated Ferroelectrics Taylor&Francis   49   41 - 49   2002年12月

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  • Crystal growth and interface characterization of dielectric BaZrO3 thin films on Si substrates 査読

    T. Matsui, Y. Kitano, N. Fujimura, K. Morii, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   41 ( 11B )   6639 - 6642   2002年11月

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  • Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor: Si1-xCex films 査読

    T, Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito

    Appl. Phys. Lett.. American Institute of Physics   81 ( 21 )   4023 - 4025   2002年11月

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  • Electro-optic effect in epitaxial ZnO:Mn thin films 査読

    T. Nagata, A. Ashida, Y. Takagi, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   41 ( 11B )   6916 - 6918   2002年11月

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  • Structural, dielectric and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates 査読

    T. Matsui, H. Tanaka, N. Fujimura, T. Ito, H. Mabuchi, K. Morii

    Appl. Phys. Lett. American Institute of Physics   81 ( 15 )   2764 - 2766   2002年10月

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  • Thin film crystal growth of BaZrO3 at low oxygen partial pressure 査読

    Y. Kitano, T. Matsui, N. Fujimura, K. Morii, T. Ito

    Journal of Crystal Growth Elsevier   243 ( 1 )   164 - 169   2002年08月

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  • Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy 査読

    T. Yokota, N. Fujimura, T. Wada, S. Hamasaki, T. Ito

    J. Appl. Phys. AIP Publishing LLC   91 ( 10 )   7905 - 7907   2002年05月

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  • Retention property analysis of epitaxially grown YMnO3/Y2O3/Si capacitor 査読

    D. Ito, N. Fujimura, K. Kakuno, T. Ito

    Ferroelectrics Taylor&Francis   271   1677 - 1682   2002年04月

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  • Electro-optic property of ZnO:X (X=Li,Mg) thin films 査読

    T. Nagata, A. Ashida, N. Fujimura, T. Ito

    Journal of Crystal Growth Elsevier   237   533 - 537   2002年04月

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    共著区分：共著  

  • Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by Pulsed laser deposition 査読

    K. Kakuno, D. Ito, N. Fujimura, T. Matsui, T. Ito

    Journal of Crystal Growth Elsevier   237   487 - 491   2002年04月

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  • The progress of the YMnO3/Y2O3/Si system for ferroelectric gate field effect transistor 査読

    N. Fujimura, D. Ito, T. Ito

    Ferroelectrics Taylor&Francis   271   1819 - 1824   2002年01月

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    共著区分：共著  

  • Annealing behavior of electrical properties in plasma-exposed Ti/p-Si interfaces 査読

    T. Yamaguchi, H. Kato, N. Fujimura, T. Ito

    Thin Solid Films Elsevier   396 ( 41641 )   119 - 125   2001年09月

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    共著区分：共著  

  • Ferroelectricity in Li-doped ZnO:X thin films and the application for the optical switching devices 査読

    T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   40 ( 9B )   5615 - 5618   2001年09月

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    共著区分：共著  

  • Magnetic and magneto-transport properties of ZnO:Ni films 査読

    T. Wakano, N. Fujimura, N. Abe, Y. Morinaga, A. Ashida, T. Ito

    Physica E Elsevier   10 ( 41642 )   260 - 264   2001年05月

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    共著区分：共著  

  • Detailed Structural Analysis of Ce Doped Si Thin Films 査読

    T. Yokota, N. Fujimura, Y. Morinaga and T. Ito

    Physica E 雑誌   10   237 - 241   2001年05月

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    共著区分：共著  

  • Magnetic properties of Er and Er,O-doped GaAs grown by organometallic vapor phase epitaxy 査読

    Y. Morinaga, T. Edahiro, N. Fujimura, T. Ito, T. Koide, Y. Fujiwara, Y. Takeda

    Physica E Elsevier   10 ( 41642 )   391 - 394   2001年05月

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  • Polarization behavior of Li-doped ZnO thin films on Si 査読

    T. Shimura, N. Fujimura, T. Wakano, T. Yoshimura, T. Ito

    Applied Physics A Springer   2001年01月

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    共著区分：共著  

  • Preparation and ferroelectric properties of YMnO3 thin films with c-axis preferred orientation by the sol-gel method 査読

    K. Tadanaga, H. Kitahata, T. minami, N. Fujimura, T. Ito

    J. Sol-Gel Sci. tech. Springer   19 ( 41642 )   589 - 593   2000年12月

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    共著区分：共著  

  • Initial stage of film growth of pulsed laser deposited YMnO3 査読

    D. Ito, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   39 ( 9B )   5525 - 5527   2000年09月

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    共著区分：共著  

  • Influence of reactive ion etching damage on the schottky barrier hight of Ti/p-Si interface 査読

    N. Fujimura, T. Yamaguchi, H.Kato, T. Ito

    Applied Surface Science Elsevier   159   186 - 190   2000年06月

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    共著区分：共著  

  • Improvement of Y2O3/Si interface for FeRAM application 査読

    D. Ito, T. Yoshimura, N. Fujimura, T. Ito

    Appl. Sur. Sci. Elsevier   159   138 - 142   2000年06月

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    共著区分：共著  

  • Purification and characterization of organic solvent-stable lipase from organic solvent-tolerant pseudomonas aeruginosa LST-03 査読

    H. Ogino, S. Nakagawa, K. Shinya, T. Muto, N. Fujimura, M. Yasuda, H. Ishikawa

    Journal of Bioscience and Bioengineering Elsevier   89 ( 5 )   451 - 457   2000年05月

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    共著区分：共著  

  • Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure 査読

    T. Yoshimura, N. Fujimura, D. Ito, T. Ito

    J. Appl. Phys AIP Publishing LLC   87 ( 7 )   3444 - 3449   2000年04月

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    共著区分：共著  

  • Effect of plasma-induced damage on initial reactions of titanium thin films on Si surface 査読

    T. Yamaguchi, A. Hama, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   76 ( 17 )   2358 - 2360   2000年04月

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    共著区分：共著  

  • Detailed structural analysis of Ce doped Si thin films 査読

    T. Yokota, N. Fujimura, Y. Morinaga, T. Ito

    Physica E Elsevier   10   237 - 241   2000年01月

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    共著区分：共著  

  • Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide 査読

    H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   38 ( 9B )   5448 - 5451   1999年09月

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    共著区分：共著  

  • Ferroelectricity of YMnO3 thin films prepared via solution 査読

    H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   75 ( 5 )   719 - 721   1999年08月

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    共著区分：共著  

  • Preferred orientation phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films. 査読

    N. Fujimura, Darin T. Thomas, Stephen K. Streiffer, Angus I. Kingon

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   37 ( 9B )   5185 - 5188   1998年09月

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    共著区分：共著  

  • Effect of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO3. 査読

    T. Shimura, N. Fujimura, S. Yamamori, T. Yoshimura,　T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   37 ( 9B )   5280 - 5284   1998年09月

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    共著区分：共著  

  • Ferroelectric properties of c-oriented YMnO3 thin films deposited on Si substrate. 査読

    T. Yoshimura, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   73 ( 3 )   414 - 416   1998年07月

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    共著区分：共著  

  • Microstructure and dielectric properties of YMnO3 thin films prepared by dip-coating 査読

    H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, T. Ito

    Journal of American Ceramic Soc American Ceramic Soc   81 ( 5 )   1357 - 1360   1998年05月

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    共著区分：共著  

  • Growth and properties of YMnO3 thin films for non-volatile memories. 査読

    T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito

    Journal of the Korean Physical Society Korean Physical Society   32   S1632 - S1635   1998年02月

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    共著区分：共著  

  • Preparation and dielectric properties of YMnO3 ferroelectric thin films by sol-gel method. 査読

    K. Tadanaga, H. Kitahata, T. Minami, N. Fujimura, T. Ito

    Journal of Sol-Gel Science and Technology Springer   13 ( 41642 )   903 - 907   1998年01月

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    共著区分：共著  

  • YMnO3 thin films prepared from solutions for non-volatile memory devices. 査読

    N. Fujimura, H.Tanaka, H.Kitahata, K.Tadanaga, T. Ito, T. Minami

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   36 ( 12A )   L1601 - L1603   1997年12月

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    共著区分：共著  

  • Mechanism for ordering in SiGe films with reconstructed surface. 査読

    T. Araki, N. Fujimura, T. Ito

    Appl. Phys. Lett. American Institute of Physics   71 ( 9 )   1174 - 1176   1997年09月

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    共著区分：共著  

  • Fabrication of YMnO3 thin films on Si substrates by a pulsed laser deposition method. 査読

    T. Yoshimura, N. Fujimura, N. Aoki, K. Hokayama, S. Tsukui, K. Kawabata, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   36 ( 9B )   5921 - 5924   1997年09月

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    共著区分：共著  

  • The stability of ordered structures in SiGe films examined by strain energy calculations. 査読

    T. Araki, N. Fujimura, T. Ito

    J. Crystal Growth Elsevier   174 ( 41643 )   675 - 679   1997年04月

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    共著区分：共著  

  • Effect of Ce doping on the growth of ZnO thin films. 査読

    Y. Morinaga, K. Sakuragi, N. Fujimura, T. Ito;

    J. Crystal Growth Elsevier   174 ( 41643 )   691 - 695   1997年04月

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    共著区分：共著  

  • Formation of YMnO3 films drectly on Si substrate. 査読

    N. Aoki, N. Fujimura, T. Yoshimura, T. Ito

    J. Crystal Growth Elsevier   174 ( 41643 )   796 - 800   1997年04月

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    共著区分：共著  

  • The initial stage of BaTiO3 epitaxial films on etched and annealed SrTiO3 substrate. 査読

    T. Yoshimura, N. Fujimura, T. Ito

    J. Crystal Growth Elsevier   174 ( 41643 )   790 - 795   1997年04月

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    共著区分：共著  

  • Growth mechanism of YMnO3 film as a new candidate for non-volatile memory devices. 査読

    N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   80 ( 12 )   7084 - 7088   1996年12月

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    共著区分：共著  

  • Structural characterization of ordered SiGe films grown on Ge (100) and Si (100) substrate. 査読

    T. Araki, N. Fujimura, T. Ito, A. Wakahara, A. Sasaki

    J. Appl. Phys. AIP Publishing LLC   80 ( 7 )   3804 - 3807   1996年10月

    　詳細を見る

    共著区分：共著  

  • Epitaxially grown YMnO3 film: new candidate for non-volatile memory devices. 査読

    N. Fujimura, T. Ishida, T. Yoshimura, T. Ito

    Applied Physics Letter American Institute of Physics   69 ( 12 )   1011 - 1013   1996年08月

    　詳細を見る

    共著区分：共著  

  • Epitaxial growth of BaTiO3 thin films and their internal stress. 査読

    S.T.Lee, N. Fujimura, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   34 ( 9B )   5168 - 5171   1995年09月

    　詳細を見る

    共著区分：共著  

  • Epitaxial orientation control of LiTaO3 film and interfacial coulomb's potential . 査読

    N. Fujimura, H. Tsuboi, T. Ito

    Jpn. J. Appl. Phys. The Japan Society of Applied Physics   34 ( 9B )   5163 - 5167   1995年09月

    　詳細を見る

    共著区分：共著  

  • Orientation control of (Ca, Sr)CuO2 thin films. 査読

    S. Nagai, H. Tanaka, N. Fujimura, T. Ito

    J. Appl. Phys. AIP Publishing LLC   77 ( 8 )   3805 - 3811   1995年04月

    　詳細を見る

    共著区分：共著  

  • (115) Bi2Sr2CuOx epitaxial films on (110) SrTiO3 by solid phase epitaxy. 査読

    S. Nagai, N. Fujimura, H. Tanaka, T. Ito

    J. Crystal Growth Elsevier   ( 41641 )   65 - 71   1994年06月

    　詳細を見る

    共著区分：共著  

  • LiNbO3 film with a new epitaxial orientation on R-cut sapphire. 査読

    N. Fujimura, M. Kakinoki, H. Tsuboi, T. Ito

    J.Appl.Phys. AIP Publishing LLC   75 ( 4 )   2169 - 2179   1994年02月

    　詳細を見る

    共著区分：共著  

  • Epiatxial growth and structural characterization of erbium silicide formed on (100) Si through a solid-phase reaction. 査読

    Y.K. Lee, N. Fujimura, T. Ito, N. Itoh

    J. Crystal Growth Elsevier   134 ( 41702 )   247 - 254   1993年12月

    　詳細を見る

    共著区分：共著  

  • An X-ray analysis of domain structure in epitaxial YSi2-x films grown on (100) Si substrate. 査読

    Y.K. Lee, N. Fujimura, T. Ito , N. Itoh

    Nano-structured Materials Elsevier   2   603 - 604   1993年11月

    　詳細を見る

    共著区分：共著  

  • Control of preferred orientation for ZnOx films: control of self-texture. 査読

    N. Fujimura, T. Nishihara, S. Goto, J. Xu, T. Ito

    J. Crystal Growth Elsevier   130 ( 41641 )   269 - 279   1993年05月

    　詳細を見る

    共著区分：共著  

  • Epitaxial growth of yttrium silicide YSi2-x on (100)Si. 査読

    Y.K.Lee, N. Fujimura, T. Ito

    Journal of Alloys and Compounds Elsevier   193 ( 41641 )   289 - 291   1993年03月

    　詳細を見る

    共著区分：共著  

  • Structural control of non-equilibrium WSi2.6 thin film by external stress. 査読

    N.Fujimura, S.Tachibana, N.Hosokawa , and T.Ito

    J. Appl. Phys. AIP Publishing LLC   73 ( 2 )   733 - 739   1993年01月

    　詳細を見る

    共著区分：共著  

  • Effects of interfacial energy on the epitaxial growth of LiNbO3. (in Japanese) 査読

    T. Ito, N. Fujimura, M. Kakinoki

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   39   105 - 108   1992年02月

    　詳細を見る

    共著区分：共著  

  • Orientation control of the Bi2Sr2CuOx thin films. -Self texture and epiraxy- (in Japanese) 査読

    S. Nagai, H. Tanaka, N. Fujimura, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   39   744 - 747   1992年02月

    　詳細を見る

    共著区分：共著  

  • The crystallization and growth of the High-Tc phase in Bi-Sr-Ca-Cu-O thin films. 査読

    S. Nagai, N. Fujimura, T. Ito

    J. Crystal Growth Elsevier   115 ( 41643 )   769 - 773   1991年12月

    　詳細を見る

    共著区分：共著  

  • Heteroepitaxy of LiNbO3 and LiNb3O8 thin films on C-cut sapphire

    N.Fujimura, T. Ito, M. Kakinoki

    J. Crystal Growth Elsevier   115 ( 41643 )   821 - 825   1991年12月

    　詳細を見る

    共著区分：共著  

  • Heteroepitaxy of zinc-oxide thin-films, considering nonepitaxial preferential orientation 査読

    S. Goto, N. Fujimura, T. Nishihara, T. Ito

    J. Crystal Growth Elsevier   115 ( 41643 )   816 - 820   1991年12月

    　詳細を見る

    共著区分：共著  

  • Annealing behavior of AL-Y alloy film for interconnection conductor in microeletronic devices 査読

    Y.K. Lee, N. Fujimura, T. Ito, N. Nishida

    Journal of Vacuum Science & Technology B AIP Publishing LLC   9 ( 5 )   2542 - 2547   1991年09月

    　詳細を見る

    共著区分：共著  

  • Formation of the High-Tc phase in Pb-free Bi-Sr-Ca-Cu-O thin film

    S. Nagai, N. Fujimura, T. Ito, K. Shiraishi

    Jpn. J. Appl. Phys, The Japan Society of Applied Physics   30 ( 5A )   L826 - L829   1991年05月

    　詳細を見る

    共著区分：共著  

  • A candidate for interconnection material; Al-Y alloy thin films

    S. Nagai, N. Fujimura, T. Ito, K. Shiraishi

    Materials Letters Elsevier   10 ( 7-8 )   344 - 347   1991年01月

    　詳細を見る

    共著区分：共著  

  • Structural, electrical and optical characterization of sputtered ZnOx thin film

    T. Nishihara, N. Fujimura, T. Ito

    Transactions of Material Research Soc.Japan 日本ＭＲＳ   1   200 - 204   1990年12月

    　詳細を見る

    共著区分：共著  

  • Influence of external stress for non-equilibrium thin films

    N. Fujimura, S. Tachibana, T. Ito

    Transactions of Material Research Soc.Japan 日本ＭＲＳ   1   205 - 210   1990年12月

    　詳細を見る

    共著区分：共著  

  • Solid phase reactions and change in stress of TiN/Ti/Si for a diffusion barrier

    N. Fujimura, T. Matsui, T. Ito, Y. Nakayama

    J. Appl. Phys, AIP Publishing LLC   67 ( 6 )   2899 - 2903   1990年03月

    　詳細を見る

    共著区分：共著  

  • The application of ZnOx thin films for the transparent conducting films and the SAW devices.(in Japanese)

    N. Fujimura, S. Goto, T. Nishihara, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   37   12 - 16   1990年01月

    　詳細を見る

    共著区分：共著  

  • The phase transformation and the behavior of excess atoms in Bi system superconducting thin films. (in Japanese)

    S. Nagai, N. Fujimura, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   37   99 - 102   1990年01月

    　詳細を見る

    共著区分：共著  

  • The formation of LiNbO3 thin films. (in Japanese)

    M. Kakinoki, K. Ando, N. Fujimura, T. Ito

    Journal of the Japan Soc. of Powder and Powder Metallurgy 粉体粉末治金協会   37   17 - 22   1990年01月

    　詳細を見る

    共著区分：共著  

  • Characterization of Si-rich WSix on Si

    N. Fujimura, S. Tachibana, T. Ito

    Applied Surface Science Elsevier   41-42   286 - 289   1989年11月

    　詳細を見る

    共著区分：共著  

  • TiSi2 formation at the Ti-rich TiNx/Si interface

    N. Fujimura, T. Ito

    Applied Surface Science Elsevier   41-42   272 - 276   1989年11月

    　詳細を見る

    共著区分：共著  

  • Effects of texture in the titanium layer on solid state reactions for Al/Ti/Si and Al/TiN/Ti/Si system

    N. Fujimura, N. Nishida, T. Ito, Y. Nakayama

    Materials Science and Engineering Elsevier   108   153 - 157   1989年02月

    　詳細を見る

    共著区分：共著  

  • Silicide formation in the Pt/a-Si:H system

    T. Ito, N. Fujimura, Y. Nakayama

    Thin Solid Films Elsevier   167 ( 1-2 )   187 - 194   1988年12月

    　詳細を見る

    共著区分：共著  

  • Dissolution pits and Si epitaxial regrowth in the Al/(111)Si system

    N. Fujimura, H. Kurosaki, T. Ito, Y. Nakayama

    J. Appl. Phys AIP Publishing LLC   64 ( 9 )   4499 - 4502   1988年11月

    　詳細を見る

    共著区分：共著  

  • Structural change of a-Si:H by annealing

    T. Ito, N. Fujimura, Y. Nakayama

    Transactions of Japan Institute of Metals 日本金属学会   29   187 - 190   1988年03月

    　詳細を見る

    共著区分：共著  

  • Structural characterization of Cu-Cr flms

    T. Ito, N. Fujimura, N. Nishida, T. Kanemura, Y. Nakayama

    Materials Letters Elsevier   6   41 - 44   1987年11月

    　詳細を見る

    共著区分：共著  

  • Change in film stress of a-Si:H by annealing

    T. Ito, N. Fujimura, Y. Nakayama

    Transactions of Japan Institute of Metals 日本金属学会   27   789 - 790   1986年10月

    　詳細を見る

    共著区分：共著  

  • Reactions between Ti and Al films on a-Si:H

    T. Ito, N. Fujimura, Y. Nakayama

    Materials Letters Elsevier   4   350 - 352   1986年08月

    　詳細を見る

    共著区分：共著  

▼全件表示

MISC（その他記事）

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  • ホスフィン分子の極薄膜形成によるMoS<sub>2</sub>への電子ドーピング

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    五十嵐悠生, 吉村武, 藤村紀文

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  • スパッタ法によるSi基板上へのBiFeO<sub>3</sub>エピタキシャル膜の作製

    高木昂平, 藤村紀文, 吉村武

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    泉宏和, 吉村武, 藤村紀文

    日本セラミックス協会年会講演予稿集(Web)   2021   2021年

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    中原隆宏, 山田悠貴, 芦田淳, 吉村武, 藤村紀文, 桐谷乃輔

    化学とマイクロ・ナノシステム学会研究会講演要旨集   43rd (CD-ROM)   2021年

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  • 有機溶液内超音波印加による機械的剥離MoS<sub>2</sub>の薄層選別法の開拓

    中本竜弥, 松山圭吾, 吉村武, 藤村紀文, 桐谷乃輔

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  • スパッタ法におけるBiFeO<sub>3</sub>薄膜の成長機構の検討

    菊地理沙, 村瀬幹生, 吉村武, 藤村紀文

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  • Si直上Y:HfO<sub>2</sub>エピタキシャル薄膜の界面誘電特性

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  • 強相関強誘電体YMnO<sub>3</sub>薄膜のd-d遷移におけるPL特性とスピン秩序の相関

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  • スパッタ法によるSi基板上へのBiFeO<sub>3</sub>薄膜のエピタキシャル成長 III

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  • アシストレーザー光照射PLD法により作製したBiFeO<sub>3</sub>薄膜の結晶性と圧電特性

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  • YbFe<sub>2</sub>O<sub>4</sub>電子強誘電体PLD薄膜のエピタキシャル成長過程と電子状態におよぼすアブレーションレーザーの影響

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  • YbFe<sub>2</sub>O<sub>4</sub>エピタキシャル薄膜の組成制御と欠陥構造の変化

    嶋本健人, 三浦光平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

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  • 2次元半導体上における電子ドナー性分子の流動と表面状態の相関

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    化学とマイクロ・ナノシステム   18 ( 1 )   2019年（ ISSN:1881-364X ）

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  • BiFeO<sub>3</sub>系非鉛圧電薄膜を用いる振動発電素子

    泉宏和, 吉村武, 藤村紀文, 村上修一, 佐藤和郎

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  • 電子強誘電体YbFe<sub>2</sub>O<sub>4</sub>薄膜のエピタキシャル成長過程におよぼす下部電極の影響

    嶋本健人, 三浦光平, 田中淳平, 桐谷乃輔, 吉村武, 芦田淳, 藤村紀文

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019年（ ISSN:2436-7613 ）

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  • 酸素分圧によるHfO<sub>2</sub>:Y/Si薄膜の配向と結晶構造の制御

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  • 常圧非平衡プラズマを用いて作製した高抵抗ZnO薄膜の電気的および圧電的特性

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  • 大面積CVD成膜単層MoS<sub>2</sub>の高発光化

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  • ナノワイヤマスクを用いたグラフェンナノリボンネットワークの作製

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  • スパッタ法によるSi基板上へのBiFeO<sub>3</sub>薄膜のエピタキシャル成長 II

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  • YbFe<sub>2</sub>O<sub>4</sub>薄膜の化学組成が電気・磁気的特性におよぼす影響 II

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  • HfO<sub>2</sub>系強誘電体スパッタ薄膜の成長時の酸素分圧が電気特性におよぼす影響

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  • HfO<sub>2</sub>基強誘電体スパッタ薄膜の成長時の酸素分圧が結晶成長・結晶構造に与える影響

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▼全件表示

担当授業科目

  • 量子デバイス

    2021年度    

  • 機能デバイス物性特論

    2021年度    

  • 物質システム概論

    2021年度    

  • 電気電子系学類総論II

    2021年度    

  • 電気電子系学類総論II

    2021年度    

  • 機能デバイス物性特別講義

    2021年度    

  • 国際アイディエーション演習

    2021年度    

  • イノベーション創出型研究者養成I

    2021年度    

▼全件表示

社会貢献活動

  • 大阪府立大学　技術紹介フェアー 大気圧非平衡プラズマを用いた酸化物・窒化物薄膜作成プロセスの新展開

    2004年04月 - 2005年03月

  • 大阪府立大学　技術紹介フェアー 機能融合型新物質の開発（磁性半導体・強磁性強誘電体）

    2004年04月 - 2005年03月

  • 大阪府立大学ニューフロンティア材料研究会講演会 「磁性と誘電性の融合をめざして」 磁性強誘電体の現状とその電界効果型トランジスタへの応用

    2003年04月 - 2004年03月

  • 大阪府立大学府民講座 エレクトロニクス最前線：半導体ナノデバイスから知能デバイスまで

    2003年04月 - 2004年03月

  • 大阪府立大学ニューフロンティア材料研究会第182回講演会 次世代トランジスタ－場を用いたマニピュレーションの舞台装置

    2003年04月 - 2004年03月

役職

  • 部局内役職

    研究推進機構 協創研究センター 

    センター長  2022年04月 - 継続中

  • 部局内役職

    研究推進機構 

    副機構長  2022年04月 - 継続中

  • 全学管理職

    大阪公立大学

    副学長  2022年04月 - 継続中